JP2008218545A - ウェーハの枚葉式エッチング装置 - Google Patents

ウェーハの枚葉式エッチング装置 Download PDF

Info

Publication number
JP2008218545A
JP2008218545A JP2007051090A JP2007051090A JP2008218545A JP 2008218545 A JP2008218545 A JP 2008218545A JP 2007051090 A JP2007051090 A JP 2007051090A JP 2007051090 A JP2007051090 A JP 2007051090A JP 2008218545 A JP2008218545 A JP 2008218545A
Authority
JP
Japan
Prior art keywords
wafer
nozzle
etching solution
edge surface
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007051090A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008218545A5 (enExample
Inventor
Takeo Kato
健夫 加藤
Tomohiro Hashii
友裕 橋井
Katsuhiko Murayama
克彦 村山
Sakae Koyada
栄 古屋田
Kazunari Takaishi
和成 高石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2007051090A priority Critical patent/JP2008218545A/ja
Priority to MYPI20080189A priority patent/MY148161A/en
Priority to DE602008000923T priority patent/DE602008000923D1/de
Priority to EP08001912A priority patent/EP1965410B1/en
Priority to DE08001912T priority patent/DE08001912T1/de
Priority to TW097105572A priority patent/TW200849370A/zh
Priority to KR1020080019366A priority patent/KR100943725B1/ko
Priority to US12/040,074 priority patent/US20090186488A1/en
Priority to CN200810082137A priority patent/CN100590808C/zh
Publication of JP2008218545A publication Critical patent/JP2008218545A/ja
Publication of JP2008218545A5 publication Critical patent/JP2008218545A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2007051090A 2007-03-01 2007-03-01 ウェーハの枚葉式エッチング装置 Pending JP2008218545A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2007051090A JP2008218545A (ja) 2007-03-01 2007-03-01 ウェーハの枚葉式エッチング装置
MYPI20080189A MY148161A (en) 2007-03-01 2008-01-31 Single wafer etching apparatus
DE602008000923T DE602008000923D1 (de) 2007-03-01 2008-02-01 Einzelwaferätzgerät
EP08001912A EP1965410B1 (en) 2007-03-01 2008-02-01 Single wafer etching apparatus
DE08001912T DE08001912T1 (de) 2007-03-01 2008-02-01 Einzelwaferätzgerät
TW097105572A TW200849370A (en) 2007-03-01 2008-02-18 Single wafer etching apparatus
KR1020080019366A KR100943725B1 (ko) 2007-03-01 2008-02-29 매엽식 웨이퍼 식각 장치
US12/040,074 US20090186488A1 (en) 2007-03-01 2008-02-29 Single wafer etching apparatus
CN200810082137A CN100590808C (zh) 2007-03-01 2008-03-03 晶片的单片式蚀刻装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007051090A JP2008218545A (ja) 2007-03-01 2007-03-01 ウェーハの枚葉式エッチング装置

Publications (2)

Publication Number Publication Date
JP2008218545A true JP2008218545A (ja) 2008-09-18
JP2008218545A5 JP2008218545A5 (enExample) 2010-04-02

Family

ID=39529369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007051090A Pending JP2008218545A (ja) 2007-03-01 2007-03-01 ウェーハの枚葉式エッチング装置

Country Status (8)

Country Link
US (1) US20090186488A1 (enExample)
EP (1) EP1965410B1 (enExample)
JP (1) JP2008218545A (enExample)
KR (1) KR100943725B1 (enExample)
CN (1) CN100590808C (enExample)
DE (2) DE602008000923D1 (enExample)
MY (1) MY148161A (enExample)
TW (1) TW200849370A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282938A (ja) * 2007-05-10 2008-11-20 Sumco Corp ウェーハの枚葉式エッチング装置
JP2017073566A (ja) * 2016-12-26 2017-04-13 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
US10236192B2 (en) 2013-11-25 2019-03-19 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
JP2019207940A (ja) * 2018-05-29 2019-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
KR101308352B1 (ko) 2011-12-16 2013-09-17 주식회사 엘지실트론 매엽식 웨이퍼 에칭장치
KR101386677B1 (ko) * 2012-10-30 2014-04-29 삼성전기주식회사 미세회로 제조방법
KR101673061B1 (ko) 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
WO2015184628A1 (en) * 2014-06-06 2015-12-10 Acm Research (Shanghai) Inc. Apparatus and method for removing film on edge of backside of wafer
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置
JP6649837B2 (ja) * 2016-04-13 2020-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6851831B2 (ja) * 2017-01-12 2021-03-31 株式会社ディスコ 加工装置
CN108109902A (zh) * 2017-09-13 2018-06-01 武汉新芯集成电路制造有限公司 一种解决晶圆薄膜层剥落方法及清洗装置
CN108054111A (zh) * 2017-12-19 2018-05-18 大连鑫鑫创世科技发展有限公司 一种集成电路硅片的分割方法
JP7303689B2 (ja) * 2019-07-31 2023-07-05 株式会社ディスコ エッチング装置およびウェーハ支持具
TWI888680B (zh) * 2020-12-18 2025-07-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102656188B1 (ko) * 2022-02-21 2024-04-11 (주)디바이스이엔지 기판 식각 처리장치 및 기판 가장자리의 식각 제어 방법
CN114695210B (zh) * 2022-06-02 2022-09-09 西安奕斯伟材料科技有限公司 一种用于硅片边缘刻蚀的装置和方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319919A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法及び処理装置
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
JP2003203900A (ja) * 2002-10-17 2003-07-18 Nec Electronics Corp ウェハ処理装置およびウェハ処理方法
JP2004111668A (ja) * 2002-09-19 2004-04-08 Citizen Watch Co Ltd 基板処理装置及び基板処理方法
JP2005109177A (ja) * 2003-09-30 2005-04-21 Takata Corp ウエハー処理装置
JP2006237502A (ja) * 2005-02-28 2006-09-07 Takata Corp 半導体基板処理装置及び半導体基板処理方法
WO2007088755A1 (ja) * 2006-01-31 2007-08-09 Sumco Corporation ウェーハの枚葉式エッチング方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309981B1 (en) * 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US6586342B1 (en) * 2000-04-25 2003-07-01 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6827814B2 (en) * 2000-05-08 2004-12-07 Tokyo Electron Limited Processing apparatus, processing system and processing method
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US20060194441A1 (en) * 2005-02-25 2006-08-31 Sakae Koyata Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method
JP4438709B2 (ja) * 2005-07-19 2010-03-24 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP4835175B2 (ja) * 2006-01-31 2011-12-14 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
JP2008251806A (ja) * 2007-03-30 2008-10-16 Sumco Corp ウェーハの枚葉式エッチング方法及びそのエッチング装置
JP2010040601A (ja) * 2008-07-31 2010-02-18 Sumco Corp 半導体ウェーハのエッチング装置及びエッチング方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319919A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法及び処理装置
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
JP2004111668A (ja) * 2002-09-19 2004-04-08 Citizen Watch Co Ltd 基板処理装置及び基板処理方法
JP2003203900A (ja) * 2002-10-17 2003-07-18 Nec Electronics Corp ウェハ処理装置およびウェハ処理方法
JP2005109177A (ja) * 2003-09-30 2005-04-21 Takata Corp ウエハー処理装置
JP2006237502A (ja) * 2005-02-28 2006-09-07 Takata Corp 半導体基板処理装置及び半導体基板処理方法
WO2007088755A1 (ja) * 2006-01-31 2007-08-09 Sumco Corporation ウェーハの枚葉式エッチング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282938A (ja) * 2007-05-10 2008-11-20 Sumco Corp ウェーハの枚葉式エッチング装置
US10236192B2 (en) 2013-11-25 2019-03-19 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
JP2017073566A (ja) * 2016-12-26 2017-04-13 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP2019207940A (ja) * 2018-05-29 2019-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
WO2019230342A1 (ja) * 2018-05-29 2019-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Also Published As

Publication number Publication date
DE08001912T1 (de) 2009-01-15
EP1965410B1 (en) 2010-04-07
EP1965410A1 (en) 2008-09-03
KR20080080461A (ko) 2008-09-04
TW200849370A (en) 2008-12-16
MY148161A (en) 2013-03-15
CN100590808C (zh) 2010-02-17
CN101256955A (zh) 2008-09-03
US20090186488A1 (en) 2009-07-23
KR100943725B1 (ko) 2010-02-23
DE602008000923D1 (de) 2010-05-20

Similar Documents

Publication Publication Date Title
JP2008218545A (ja) ウェーハの枚葉式エッチング装置
KR100927855B1 (ko) 웨이퍼의 매엽식 에칭 방법 및 그 에칭 장치
KR100760491B1 (ko) 웨이퍼의 매엽식 에칭 장치 및 웨이퍼의 매엽식 에칭 방법
US20090117749A1 (en) Etching Method of Single Wafer
JP2008198906A (ja) シリコンウェーハの製造方法
US7601644B2 (en) Method for manufacturing silicon wafers
JP2007053178A (ja) シリコンウェーハの製造方法
CN117321738A (zh) 半导体晶片的清洗装置、半导体晶片的清洗方法及硅晶片的制造方法
JP2009302163A (ja) シリコンウェーハ及びそれを用いたエピタキシャルシリコンウェーハ及び貼り合わせｓｏｉウェーハ並びにそれらの製造方法。
JP2008282938A (ja) ウェーハの枚葉式エッチング装置
JP2007207811A (ja) ウェーハの枚葉式エッチング装置
JP4816229B2 (ja) ウェーハの枚葉式エッチング装置
JP2006237502A (ja) 半導体基板処理装置及び半導体基板処理方法
KR100827574B1 (ko) 실리콘 웨이퍼의 제조 방법
JP2004186555A (ja) ウエハ吸着装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100217

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111101

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120228