CN100590808C - 晶片的单片式蚀刻装置 - Google Patents

晶片的单片式蚀刻装置 Download PDF

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Publication number
CN100590808C
CN100590808C CN200810082137A CN200810082137A CN100590808C CN 100590808 C CN100590808 C CN 100590808C CN 200810082137 A CN200810082137 A CN 200810082137A CN 200810082137 A CN200810082137 A CN 200810082137A CN 100590808 C CN100590808 C CN 100590808C
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CN
China
Prior art keywords
wafer
nozzle
mentioned
etching
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810082137A
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English (en)
Chinese (zh)
Other versions
CN101256955A (zh
Inventor
加藤健夫
桥井友裕
村山克彦
古屋田荣
高石和成
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Sumco Corp
Original Assignee
Sumco Corp
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Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN101256955A publication Critical patent/CN101256955A/zh
Application granted granted Critical
Publication of CN100590808C publication Critical patent/CN100590808C/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN200810082137A 2007-03-01 2008-03-03 晶片的单片式蚀刻装置 Expired - Fee Related CN100590808C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007051090A JP2008218545A (ja) 2007-03-01 2007-03-01 ウェーハの枚葉式エッチング装置
JP2007051090 2007-03-01

Publications (2)

Publication Number Publication Date
CN101256955A CN101256955A (zh) 2008-09-03
CN100590808C true CN100590808C (zh) 2010-02-17

Family

ID=39529369

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810082137A Expired - Fee Related CN100590808C (zh) 2007-03-01 2008-03-03 晶片的单片式蚀刻装置

Country Status (8)

Country Link
US (1) US20090186488A1 (enExample)
EP (1) EP1965410B1 (enExample)
JP (1) JP2008218545A (enExample)
KR (1) KR100943725B1 (enExample)
CN (1) CN100590808C (enExample)
DE (2) DE602008000923D1 (enExample)
MY (1) MY148161A (enExample)
TW (1) TW200849370A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008282938A (ja) * 2007-05-10 2008-11-20 Sumco Corp ウェーハの枚葉式エッチング装置
KR101308352B1 (ko) 2011-12-16 2013-09-17 주식회사 엘지실트론 매엽식 웨이퍼 에칭장치
KR101386677B1 (ko) * 2012-10-30 2014-04-29 삼성전기주식회사 미세회로 제조방법
JP6064875B2 (ja) 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
KR101673061B1 (ko) 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
WO2015184628A1 (en) * 2014-06-06 2015-12-10 Acm Research (Shanghai) Inc. Apparatus and method for removing film on edge of backside of wafer
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置
JP6649837B2 (ja) * 2016-04-13 2020-02-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6304364B2 (ja) * 2016-12-26 2018-04-04 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6851831B2 (ja) * 2017-01-12 2021-03-31 株式会社ディスコ 加工装置
CN108109902A (zh) * 2017-09-13 2018-06-01 武汉新芯集成电路制造有限公司 一种解决晶圆薄膜层剥落方法及清洗装置
CN108054111A (zh) * 2017-12-19 2018-05-18 大连鑫鑫创世科技发展有限公司 一种集成电路硅片的分割方法
JP6985981B2 (ja) * 2018-05-29 2021-12-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7303689B2 (ja) * 2019-07-31 2023-07-05 株式会社ディスコ エッチング装置およびウェーハ支持具
TWI888680B (zh) * 2020-12-18 2025-07-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102656188B1 (ko) * 2022-02-21 2024-04-11 (주)디바이스이엔지 기판 식각 처리장치 및 기판 가장자리의 식각 제어 방법
CN114695210B (zh) * 2022-06-02 2022-09-09 西安奕斯伟材料科技有限公司 一种用于硅片边缘刻蚀的装置和方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309981B1 (en) * 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6333275B1 (en) * 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US6537416B1 (en) * 1999-10-01 2003-03-25 Novellus Systems, Inc. Wafer chuck for use in edge bevel removal of copper from silicon wafers
US6586342B1 (en) * 2000-04-25 2003-07-01 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
JP2001319919A (ja) * 2000-05-08 2001-11-16 Tokyo Electron Ltd 半導体装置の製造方法及び処理装置
US6827814B2 (en) * 2000-05-08 2004-12-07 Tokyo Electron Limited Processing apparatus, processing system and processing method
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP2004111668A (ja) * 2002-09-19 2004-04-08 Citizen Watch Co Ltd 基板処理装置及び基板処理方法
JP2003203900A (ja) * 2002-10-17 2003-07-18 Nec Electronics Corp ウェハ処理装置およびウェハ処理方法
JP4342260B2 (ja) * 2003-09-30 2009-10-14 株式会社高田工業所 ウエハー処理装置
US20060194441A1 (en) * 2005-02-25 2006-08-31 Sakae Koyata Method for etching a silicon wafer and method for performing differentiation between the obverse and the reverse of a silicon wafer using the same method
JP4464293B2 (ja) * 2005-02-28 2010-05-19 株式会社高田工業所 半導体基板処理装置及び半導体基板処理方法
JP4438709B2 (ja) * 2005-07-19 2010-03-24 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP4835175B2 (ja) * 2006-01-31 2011-12-14 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
KR20080082010A (ko) * 2006-01-31 2008-09-10 가부시키가이샤 섬코 웨이퍼의 매엽식 식각 방법
JP2008251806A (ja) * 2007-03-30 2008-10-16 Sumco Corp ウェーハの枚葉式エッチング方法及びそのエッチング装置
JP2010040601A (ja) * 2008-07-31 2010-02-18 Sumco Corp 半導体ウェーハのエッチング装置及びエッチング方法

Also Published As

Publication number Publication date
DE08001912T1 (de) 2009-01-15
EP1965410B1 (en) 2010-04-07
EP1965410A1 (en) 2008-09-03
KR20080080461A (ko) 2008-09-04
TW200849370A (en) 2008-12-16
MY148161A (en) 2013-03-15
JP2008218545A (ja) 2008-09-18
CN101256955A (zh) 2008-09-03
US20090186488A1 (en) 2009-07-23
KR100943725B1 (ko) 2010-02-23
DE602008000923D1 (de) 2010-05-20

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100217

Termination date: 20120303