JP2008211159A - Wiring board and electronic apparatus using the same - Google Patents

Wiring board and electronic apparatus using the same Download PDF

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JP2008211159A
JP2008211159A JP2007110466A JP2007110466A JP2008211159A JP 2008211159 A JP2008211159 A JP 2008211159A JP 2007110466 A JP2007110466 A JP 2007110466A JP 2007110466 A JP2007110466 A JP 2007110466A JP 2008211159 A JP2008211159 A JP 2008211159A
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hole
insulating substrate
metal plate
screw
wiring board
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Kenichi Hashimoto
健一 橋本
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To improve long-term reliability by preventing an insulating substrate 2 from being cracked in a wiring board 1 fixed to a mounting substrate 6 by a screw 5. <P>SOLUTION: The present invention relates to a wiring board 1 comprising: an insulating substrate 2 including a first surface 2A at a side where an electronic component is mounted, a second surface 2B at a side opposed to a mounting substrate 6 and a through-hole 2a for passing through a screw; a first sheet metal 3 provided on the first surface 2A of the insulating substrate 2 and including a through-hole 3a corresponding to the through-hole 2a of the insulating substrate 2; and a second sheet metal 4 provided on the second surface 2B of the insulating substrate 2 and including a through-hole 4a corresponding to the through-hole 2a of the insulating substrate 2 and being smaller than the through-hole 2a of the insulating substrate 2. The wiring board can be fixed by suppressing a peripheral part of the through-hole 4a of the second sheet metal 4 by the screw 5, such that the insulating substrate 2 can be suppressed from being cracked by thermal stress caused by a fastening power when fixing the wiring board 1 to the mounting substrate 6 by the screw 5 or a temperature cycle load in a case where the electronic component is mounted and the wiring board is used while being fixed to the mounting substrate 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、配線基板およびそれを用いた電子装置に関するものである。   The present invention relates to a wiring board and an electronic device using the wiring board.

現在、トランジスタ、CPU(Central Processing Unit)用のLSI(Large Scale Integrated circuit)、IGBT(Insulated Gate Bipolar Transistor)などの半導体素子を搭載した配線基板をヒートシンクなどの実装基板に直接あるいは共通板を介して接合した電子装置がパワーモジュールとして多く用いられている。このような半導体素子は大きな電流を流すことができるが、発生した熱が半導体素子を劣化させる場合がある。このため、半導体素子を搭載する配線基板として、電気絶縁性と熱伝導性に優れた窒化アルミニウムや窒化珪素等からなるセラミック絶縁基板を用い、その両面に銅やアルミニウム等の金属板を接合したセラミック配線基板が用いられている。   Currently, a wiring board on which a semiconductor element such as a transistor, an LSI (Large Scale Integrated circuit) for a CPU (Central Processing Unit), or an IGBT (Insulated Gate Bipolar Transistor) is mounted is directly mounted on a mounting board such as a heat sink or through a common plate. Bonded electronic devices are often used as power modules. Such a semiconductor element can pass a large current, but the generated heat may deteriorate the semiconductor element. For this reason, a ceramic insulating substrate made of aluminum nitride, silicon nitride or the like having excellent electrical insulation and thermal conductivity is used as a wiring board for mounting a semiconductor element, and a ceramic plate in which a metal plate such as copper or aluminum is bonded to both sides thereof. A wiring board is used.

従来の電子装置における配線基板と実装基板との接合は、配線基板の裏面に位置する金属板と実装基板間をろう材で接合することで行なわれており、最近では、さらに接合の信頼性を高めるために、配線基板に貫通孔を形成し、この貫通孔を利用してねじで固定する方法も用いられるようになっている(例えば、特許文献1,2を参照。)。
特開2003−197824号公報 特開2006−186050号公報
In the conventional electronic device, the wiring board and the mounting board are joined by joining the metal plate located on the back surface of the wiring board and the mounting board with a brazing material. Recently, the reliability of the joining has been further increased. In order to increase the thickness, a method of forming a through hole in the wiring board and fixing with a screw using the through hole is also used (see, for example, Patent Documents 1 and 2).
JP 2003-197824 A JP 2006-186050 A

しかしながら、従来の構成では、配線基板を実装基板へねじで固定した際の締め付けの力が絶縁基板に付加されることにより、または、実装基板へ固定した後にパワーモジュールを動作させた際の半導体素子の発熱による温度サイクル負荷を受けた後に、絶縁基板にクラックが発生するという問題点があった。絶縁基板にクラックが発生してしまうと、配線基板をヒートシンク等の実装基板に密着させて固定できないので放熱性が低下して半導体素子の動作不良や破壊が発生してしまったり、上下の金属板間の絶縁性が低下してしまったり、というような信頼性の低下を招いてしまうという問題点があった。   However, in the conventional configuration, the semiconductor element when the power module is operated by applying a tightening force to the insulating substrate when the wiring substrate is fixed to the mounting substrate with a screw or after being fixed to the mounting substrate. After being subjected to a temperature cycle load due to heat generation, there was a problem that cracks occurred in the insulating substrate. If a crack occurs in an insulating substrate, the wiring substrate cannot be fixed in close contact with a mounting substrate such as a heat sink, so heat dissipation is reduced, causing malfunction or destruction of the semiconductor element, or upper and lower metal plates. There was a problem that the insulation between them would be lowered and the reliability would be lowered.

本発明は上記問題点に鑑みて完成されたものであり、その目的は、実装基板にねじで固定される配線基板の絶縁基板におけるクラックの発生を防止して長期信頼性を向上させた配線基板およびそれを用いた電子装置を提供することにある。   The present invention has been completed in view of the above problems, and its purpose is to prevent the occurrence of cracks in the insulating substrate of the wiring substrate that is fixed to the mounting substrate with screws, thereby improving long-term reliability. And providing an electronic device using the same.

本発明の第1の配線基板は、電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した貫通孔を有する第1の金属板と、前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第2の金属板とを備えることを特徴とするものである。   A first wiring board according to the present invention includes a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and an insulating substrate having a through hole for passing a screw, and the insulation A first metal plate provided on the first surface of the substrate and having a through hole corresponding to the through hole of the insulating substrate; and provided on the second surface of the insulating substrate; And a second metal plate having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole.

また、本発明の第2の配線基板は、電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第1の金属板と、前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した貫通孔を有する第2の金属板とを備えることを特徴とするものである。   Further, the second wiring board of the present invention includes an insulating substrate having a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and a through hole for passing a screw; A first metal plate provided on the first surface of the insulating substrate and having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate; and the second metal plate of the insulating substrate. And a second metal plate having a through hole corresponding to the through hole of the insulating substrate.

また、本発明の第3の配線基板は、電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第1の金属板と、前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記第1の金属板の前記貫通孔より小さい貫通孔を有する第2の金属板とを備えることを特徴とするものである。   The third wiring board of the present invention includes an insulating substrate having a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and a through hole for passing a screw; A first metal plate provided on the first surface of the insulating substrate and having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate; and the second metal plate of the insulating substrate. And a second metal plate having a through hole smaller than the through hole of the first metal plate corresponding to the through hole of the insulating substrate.

また、本発明の電子装置は、本発明の第1〜第3のいずれかの配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の前記貫通孔に通された前記ねじの頭部で前記第1の金属板または前記第2の金属板を押えて前記実装基板に固定されることを特徴とするものである。   The electronic device according to the present invention includes the electronic component mounted on the first surface side of any one of the first to third wiring boards of the present invention, and is passed through the through hole of the insulating substrate. Further, the first metal plate or the second metal plate is pressed by the head portion of the screw and fixed to the mounting substrate.

また、本発明の電子装置は、本発明の第3の配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の前記貫通孔に通された、前記第1の金属板を押える第1のねじ頭部および前記第2の金属板を押える第2のねじ頭部を有するねじで前記第1の金属板および前記第2の金属板を押えて前記実装基板に固定されることを特徴とするものである。   In the electronic device of the present invention, the electronic component is mounted on the first surface side of the third wiring board of the present invention, and is passed through the through hole of the insulating substrate. The first metal plate and the second metal plate are pressed and fixed to the mounting board with a screw having a first screw head that holds the metal plate and a second screw head that holds the second metal plate. It is characterized by that.

また、本発明の電子装置は、本発明の第3の配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の貫通孔に通された、前記第1の金属板を押えるねじ頭部を有するねじおよび該ねじが通され前記第2の金属板を押えるリングで前記第1の金属板および前記第2の金属板を押えて前記実装基板に固定されることを特徴とするものである。   In the electronic device of the present invention, the electronic component is mounted on the first surface side of the third wiring board of the present invention, and the first metal is passed through the through hole of the insulating substrate. A screw having a screw head for pressing the plate and a ring through which the screw is passed to press the second metal plate, and the first metal plate and the second metal plate are pressed and fixed to the mounting substrate. It is a feature.

本発明の第1の配線基板によれば、絶縁基板の実装基板に対向する側の第2の面に設けられ、絶縁基板の貫通孔に対応した絶縁基板の貫通孔より小さい貫通孔を有する第2の金属板を備えることから、実装基板に配線基板をねじで固定する場合に、ねじを絶縁基板の貫通孔に通してねじの頭部で第2の金属板の貫通孔の周辺部を押えて固定することができるので、絶縁基板にねじを締め付ける力を加えることなく固定することができる。従って、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することを抑制できる。   According to the first wiring board of the present invention, the first wiring board is provided on the second surface of the insulating substrate facing the mounting board, and has a through hole smaller than the through hole of the insulating board corresponding to the through hole of the insulating board. When the wiring board is fixed to the mounting board with a screw, the screw is passed through the through hole of the insulating board and the periphery of the through hole of the second metal plate is held by the head of the screw. Can be fixed without applying a force to tighten the screw to the insulating substrate. Therefore, the insulating substrate is cracked by the tightening force when fixing the wiring board to the mounting board with screws, or by the thermal stress due to the temperature cycle load when using electronic components such as semiconductor elements mounted on the mounting board. Can be prevented from occurring.

また、本発明の第2の配線基板によれば、絶縁基板の電子部品が搭載される側の第1の面に設けられ、絶縁基板の貫通孔に対応した絶縁基板の貫通孔より小さい貫通孔を有する第1の金属板を備えることから、実装基板に配線基板をねじで固定する場合に、ねじを絶縁基板の貫通孔に通してねじの頭部で第1の金属板の貫通孔の周辺部を押えて固定することができるので、絶縁基板に加わるねじを締め付ける力を第1の金属板が変形することにより低減することができる。従って、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することを抑制できる。   According to the second wiring board of the present invention, the through-hole is provided on the first surface of the insulating substrate on the side where the electronic component is mounted and is smaller than the through-hole of the insulating substrate corresponding to the through-hole of the insulating substrate. When the wiring board is fixed to the mounting substrate with a screw, the screw is passed through the through hole of the insulating substrate and the periphery of the through hole of the first metal plate at the head of the screw. Since the portion can be pressed and fixed, the force for tightening the screw applied to the insulating substrate can be reduced by the deformation of the first metal plate. Therefore, the insulating substrate is cracked by the tightening force when fixing the wiring board to the mounting board with screws, or by the thermal stress due to the temperature cycle load when using electronic components such as semiconductor elements mounted on the mounting board. Can be prevented from occurring.

また、本発明の第3の配線基板によれば、絶縁基板の電子部品が搭載される側の第1の面に設けられ、絶縁基板の貫通孔に対応した絶縁基板の貫通孔より小さい貫通孔を有する第1の金属板と、絶縁基板の実装基板に対向する側の第2の面に設けられ、絶縁基板の貫通孔に対応した第1の金属板の貫通孔より小さい貫通孔を有する第2の金属板とを備えることから、実装基板に配線基板をねじで固定する場合に、ねじを絶縁基板の貫通孔に通してねじの頭部等で第1の金属板の貫通孔の周辺部を押えるとともに第2の金属板の貫通孔の周辺部を押えて固定することができるので、絶縁基板に加わるねじを締め付ける力を第1の金属板が変形することにより低減するとともに、絶縁基板2に力を加えることなく第2の金属板を押えて配線基板1を固定することができる。従って、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することを抑制できる。   According to the third wiring board of the present invention, the through hole is provided on the first surface of the insulating substrate on the side where the electronic component is mounted and is smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate. A first metal plate having a through hole smaller than the through hole of the first metal plate corresponding to the through hole of the insulating substrate provided on the second surface of the insulating substrate facing the mounting substrate. When the wiring board is fixed to the mounting board with a screw, the screw is passed through the through-hole of the insulating board and the periphery of the through-hole of the first metal plate with the head of the screw or the like. And the peripheral portion of the through hole of the second metal plate can be pressed and fixed, so that the force for tightening the screw applied to the insulating substrate is reduced by the deformation of the first metal plate, and the insulating substrate 2 Wiring board 1 by pressing the second metal plate without applying force to It can be fixed. Therefore, the insulating substrate is cracked by the tightening force when fixing the wiring board to the mounting board with screws, or by the thermal stress due to the temperature cycle load when using electronic components such as semiconductor elements mounted on the mounting board. Can be prevented from occurring.

また、本発明の電子装置によれば、本発明の第1〜第3のいずれかの配線基板の第1の面側に電子部品が搭載されてなり、絶縁基板の貫通孔に通されたねじの頭部で第1の金属板または第2の金属板を押えて実装基板に固定されることから、絶縁基板に加わるねじを締め付ける力を第1または第2の金属板が変形することにより低減して配線基板が実装基板に固定されるので、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することが抑制され、信頼性の高い電子装置となる。   According to the electronic device of the present invention, the electronic component is mounted on the first surface side of any one of the first to third wiring boards of the present invention, and the screw passed through the through hole of the insulating substrate. Since the first metal plate or the second metal plate is pressed and fixed to the mounting substrate by the head, the force for tightening the screw applied to the insulating substrate is reduced by the deformation of the first or second metal plate. Then, the wiring board is fixed to the mounting board, so the tightening force when fixing the wiring board to the mounting board with screws, or the temperature when the electronic parts such as semiconductor elements are mounted and fixed to the mounting board The occurrence of cracks in the insulating substrate due to thermal stress due to the cycle load is suppressed, and a highly reliable electronic device is obtained.

また、本発明の電子装置によれば、本発明の第3の配線基板の第1の面側に電子部品が搭載されてなり、絶縁基板の貫通孔に通された、第1の金属板を押える第1のねじ頭部および第2の金属板を押える第2のねじ頭部を有するねじで第1の金属板および第2の金属板を押えて実装基板に固定されることから、絶縁基板に加わるねじの締め付け力を低減して第1の金属板および第2の金属板の両方を押えて確実に実装基板に固定されるので、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することが抑制され、信頼性の高い電子装置となる。   According to the electronic device of the present invention, the electronic component is mounted on the first surface side of the third wiring board of the present invention, and the first metal plate passed through the through hole of the insulating substrate is provided. Since the first metal plate and the second metal plate are pressed and fixed to the mounting substrate with a screw having the first screw head to be pressed and the second screw head to be pressed to hold the second metal plate, the insulating substrate The tightening force when fixing the wiring board to the mounting board with screws is reduced because the tightening force of the screw applied to the wire is reduced and both the first metal plate and the second metal plate are pressed and securely fixed to the mounting board. In addition, it is possible to suppress the generation of cracks in the insulating substrate due to the thermal stress caused by the temperature cycle load when the electronic component such as the semiconductor element is mounted and fixed to the mounting substrate, and the electronic device is highly reliable. .

また、本発明の電子装置によれば、本発明の第3の配線基板の第1の面側に電子部品が搭載されてなり、絶縁基板の貫通孔に通された、第1の金属板を押えるねじ頭部を有するねじおよびこのねじが通され第2の金属板を押えるリングで、ねじ頭部で第1の金属板をおよびリングで第2の金属板を押えて実装基板に固定されることから、一般的な形状のねじを用いてより容易に絶縁基板に加わるねじの締め付け力を低減して第1の金属板および第2の金属板の両方を押えて確実に固定され、配線基板をねじで実装基板に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板にクラックが発生することが抑制され、信頼性の高い電子装置となる。   According to the electronic device of the present invention, the electronic component is mounted on the first surface side of the third wiring board of the present invention, and the first metal plate passed through the through hole of the insulating substrate is provided. A screw having a screw head to be pressed and a ring through which the screw is passed to press the second metal plate, and the first metal plate by the screw head and the second metal plate by the ring are fixed to the mounting substrate. Therefore, it is possible to reduce the tightening force of the screw that is more easily applied to the insulating substrate by using a screw having a general shape and press both the first metal plate and the second metal plate to be securely fixed. The insulation substrate may crack due to the tightening force when fixing it to the mounting board with screws or the thermal stress due to the temperature cycle load when using electronic components such as semiconductor elements mounted on the mounting board. Is suppressed, and a highly reliable electronic device is obtained.

本発明の配線基板について図面を参照して説明する。図1〜図4は本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)に示す配線基板のA部を拡大して示した要部拡大断面図である。これらの図において、1は配線基板、2は絶縁基板、3は第1の金属板、4は第2の金属板、5はねじ、6は実装基板、7はリングである。各断面図は、絶縁基板2の第1の面2Aおよび第2の面2Bにそれぞれ第1の金属板3および第2の金属板4が設けられた配線基板1を、絶縁基板2の貫通孔2aを通したねじ5により実装基板6に固定した状態を示している。   The wiring board of the present invention will be described with reference to the drawings. 1 to 4 are cross-sectional views showing an example of an embodiment of a wiring board according to the present invention, and (b) is an enlarged cross-sectional view of a main part showing an enlarged portion A of the wiring board shown in (a). is there. In these drawings, 1 is a wiring substrate, 2 is an insulating substrate, 3 is a first metal plate, 4 is a second metal plate, 5 is a screw, 6 is a mounting substrate, and 7 is a ring. Each cross-sectional view shows a wiring board 1 in which a first metal plate 3 and a second metal plate 4 are provided on the first surface 2A and the second surface 2B of the insulating substrate 2, respectively, and through holes of the insulating substrate 2. The state which was fixed to the mounting board | substrate 6 with the screw 5 which passed 2a is shown.

本発明の第1の配線基板1は、図1に示すように、電子部品が搭載される側の第1の面2A、実装基板6に対向する側の第2の面2Bおよびねじ5を通すための貫通孔2aを有する絶縁基板2と、この絶縁基板2の第1の面2Aに設けられ、絶縁基板2の貫通孔2aに対応した貫通孔3aを有する第1の金属板3と、絶縁基板2の第2の面2Bに設けられ、絶縁基板2の貫通孔2aに対応した絶縁基板2の貫通孔2aより小さい貫通孔4aを有する第2の金属板4とを備えることを特徴とするものである。   As shown in FIG. 1, the first wiring board 1 of the present invention passes the first surface 2 </ b> A on the side where electronic components are mounted, the second surface 2 </ b> B on the side facing the mounting substrate 6, and the screws 5. An insulating substrate 2 having a through-hole 2a, and a first metal plate 3 provided on the first surface 2A of the insulating substrate 2 and having a through-hole 3a corresponding to the through-hole 2a of the insulating substrate 2; And a second metal plate 4 provided on the second surface 2B of the substrate 2 and having a through hole 4a smaller than the through hole 2a of the insulating substrate 2 corresponding to the through hole 2a of the insulating substrate 2. Is.

本発明の第1の配線基板1によれば、絶縁基板2の実装基板6に対向する側の第2の面2Bに設けられた、絶縁基板2の貫通孔2aに対応した絶縁基板2の貫通孔2aより小さい貫通孔4aを有する第2の金属板4を備えることから、実装基板6に配線基板1をねじ5で固定する場合に、図1に示すように、ねじ5を絶縁基板2の貫通孔2aに通してねじ5の頭部の座面で第2の金属板4の貫通孔4aの周辺部を押えて固定することができるので、絶縁基板2にねじ5を締め付ける力を加えることなく固定することができる。従って、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板1にクラックが発生することを抑制できる。   According to the first wiring board 1 of the present invention, the penetration of the insulating substrate 2 corresponding to the through hole 2a of the insulating substrate 2 provided on the second surface 2B of the insulating substrate 2 on the side facing the mounting substrate 6. Since the second metal plate 4 having the through hole 4a smaller than the hole 2a is provided, when the wiring substrate 1 is fixed to the mounting substrate 6 with the screw 5, the screw 5 is attached to the insulating substrate 2 as shown in FIG. Since the peripheral portion of the through hole 4a of the second metal plate 4 can be pressed and fixed through the through hole 2a with the seating surface of the head of the screw 5, the force for tightening the screw 5 to the insulating substrate 2 is applied. It can be fixed without. Therefore, due to the tightening force when the wiring substrate 1 is fixed to the mounting substrate 6 with the screw 5 and the thermal stress due to the temperature cycle load when the electronic component such as a semiconductor element is mounted and fixed to the mounting substrate 6, Generation of cracks in the insulating substrate 1 can be suppressed.

本発明の第1の配線基板1において、絶縁基板2の貫通孔2aは、固定に用いるねじ5の頭部が入るように、例えばねじ5の頭部の径より大きい径を有するものである。また、第2の金属板4の貫通孔4aは、ねじ5を通すとともにねじ5の頭部で第2の金属板4を押えられるように、例えばねじ5の頭部の径より小さくねじ5のねじ部より径の大きい径を有するものである。第1の金属板3の貫通孔3aは、固定に用いるねじ5の頭部が入るように、例えばねじ5の頭部の径より大きい径を有するものであればよく、絶縁基板2の貫通孔2aの径に比較して小さくても、同じでも、あるいは大きくてもよい。絶縁基板2の貫通孔2aの周囲には、貫通孔2aを形成した際等に発生したマイクロクラックが存在し、クラック発生の起点となりやすい場合があるので、絶縁基板2に第1の金属板3を接合した際に、それらの間に発生する熱応力等が絶縁基板2の貫通孔2aの周囲に加わらないようにするためには、図1(b)に示すように、第1の金属板3(の接合部)を絶縁基板2の貫通孔2aの外周より外側に配置するように、絶縁基板2の貫通孔2aの径に比較して大きい径の貫通孔3aとするのが好ましい。第1の金属板3の貫通孔3aの大きさを絶縁基板2の貫通孔2aと同じかそれ以下とする場合は、第1の金属板3と絶縁基板2との接合部の位置、すなわち活性金属ろう材やメタライズの位置を絶縁基板2の貫通孔2aの外周より外側に設ければよい。同様に、図1(b)に示すように、第2の金属板4との接合部の位置についても絶縁基板2の貫通孔2aの外周より外側に設けるのが好ましい。貫通孔2aの周囲のマイクロクラックは通常は約50μm以下であるので、このように接合部を絶縁基板2の貫通孔2aの外周より外側に設ける場合は、絶縁基板2の貫通孔2aの外周から50μm以上外側に、より好ましくは100μm以上外側に設けるのが好ましい。   In the first wiring board 1 of the present invention, the through hole 2a of the insulating substrate 2 has a diameter larger than the diameter of the head of the screw 5, for example, so that the head of the screw 5 used for fixing enters. Further, the through-hole 4a of the second metal plate 4 is smaller than the diameter of the head of the screw 5, for example, so that the screw 5 can be passed through and the second metal plate 4 can be pressed by the head of the screw 5. It has a larger diameter than the threaded portion. The through hole 3a of the first metal plate 3 may have any diameter larger than the diameter of the head of the screw 5, for example, so that the head of the screw 5 used for fixing enters. It may be smaller, the same or larger than the diameter of 2a. Since there are microcracks generated when the through-hole 2a is formed around the through-hole 2a of the insulating substrate 2 and the crack may be easily generated, the first metal plate 3 is formed on the insulating substrate 2. In order to prevent thermal stress generated between them from being applied to the periphery of the through-hole 2a of the insulating substrate 2, as shown in FIG. 1B, the first metal plate It is preferable that the through-hole 3a has a diameter larger than the diameter of the through-hole 2a of the insulating substrate 2 so that 3 (joint thereof) is disposed outside the outer periphery of the through-hole 2a of the insulating substrate 2. When the size of the through hole 3a of the first metal plate 3 is the same as or smaller than the size of the through hole 2a of the insulating substrate 2, the position of the junction between the first metal plate 3 and the insulating substrate 2, that is, the activity The position of the metal brazing material or metallization may be provided outside the outer periphery of the through hole 2a of the insulating substrate 2. Similarly, as shown in FIG. 1B, it is preferable that the position of the joint portion with the second metal plate 4 is also provided outside the outer periphery of the through hole 2 a of the insulating substrate 2. Since the microcracks around the through hole 2a are usually about 50 μm or less, when the joint is provided outside the outer periphery of the through hole 2a of the insulating substrate 2 in this way, the outer periphery of the through hole 2a of the insulating substrate 2 is It is preferable that it is provided on the outside of 50 μm or more, more preferably on the outside of 100 μm or more.

また、本発明の第2の配線基板1は、図2に示すように、電子部品が搭載される側の第1の面2A、実装基板6に対向する側の第2の面2Bおよびねじ5を通すための貫通孔2aを有する絶縁基板2と、この絶縁基板2の第1の面2Aに設けられ、絶縁基板2の貫通孔2aに対応した絶縁基板2の貫通孔2aより小さい貫通孔3aを有する第1の金属板3と、絶縁基板2の第2の面2Bに設けられ、絶縁基板2の貫通孔2aに対応した貫通孔4aを有する第2の金属板4とを備えることを特徴とするものである。   Further, as shown in FIG. 2, the second wiring board 1 of the present invention has a first surface 2 </ b> A on the side where electronic components are mounted, a second surface 2 </ b> B on the side facing the mounting substrate 6, and screws 5. An insulating substrate 2 having a through hole 2a for passing through, and a through hole 3a which is provided on the first surface 2A of the insulating substrate 2 and which is smaller than the through hole 2a of the insulating substrate 2 corresponding to the through hole 2a of the insulating substrate 2 And a second metal plate 4 provided on the second surface 2B of the insulating substrate 2 and having a through hole 4a corresponding to the through hole 2a of the insulating substrate 2. It is what.

本発明の第2の配線基板1によれば、絶縁基板2の電子部品が搭載される側の第1の面2Aに設けられた、絶縁基板2の貫通孔2aに対応した絶縁基板2の貫通孔2aより小さい貫通孔3aを有する第1の金属板3を備えることから、実装基板6に配線基板1をねじ5で固定する場合に、図2に示すように、ねじ5を絶縁基板2の貫通孔2aに通してねじ5の頭部で第1の金属板3の貫通孔3aの周辺部を押えて固定することができるので、絶縁基板2に加わる、ねじ5を締め付ける力を第1の金属板3が変形することにより低減することができる。従って、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板2にクラックが発生することを抑制できる。これにより、配線基板1に実装される電子部品を正常かつ安定に作動させることのできるものとなる。   According to the second wiring board 1 of the present invention, the through-hole of the insulating substrate 2 corresponding to the through-hole 2a of the insulating substrate 2 provided on the first surface 2A on the side on which the electronic component of the insulating substrate 2 is mounted. Since the first metal plate 3 having the through hole 3a smaller than the hole 2a is provided, when the wiring substrate 1 is fixed to the mounting substrate 6 with the screw 5, the screw 5 is attached to the insulating substrate 2 as shown in FIG. Since the periphery of the through hole 3a of the first metal plate 3 can be pressed and fixed through the through hole 2a with the head of the screw 5, the force applied to the insulating substrate 2 and tightening the screw 5 is the first. This can be reduced by the deformation of the metal plate 3. Therefore, due to the tightening force when the wiring substrate 1 is fixed to the mounting substrate 6 with the screw 5 and the thermal stress due to the temperature cycle load when the electronic component such as a semiconductor element is mounted and fixed to the mounting substrate 6, Generation of cracks in the insulating substrate 2 can be suppressed. Thereby, the electronic component mounted on the wiring board 1 can be operated normally and stably.

本発明の第2の配線基板1において、絶縁基板2の貫通孔2aは、ねじ5を締め付ける力を低減するように第1の金属板3が変形することができるように、例えばねじ5の頭部の径より大きい径を有するものである。また、第1の金属板3の貫通孔3aは、ねじ5を通すとともにねじ5の頭部で第1の金属板3を押えられるように、例えばその径が、ねじ5の頭部の径より小さく、ねじ5のねじ部の径より大きく、絶縁基板2の貫通孔2aの径より小さいものである。第2の金属板4の貫通孔4aは、固定に用いるねじ5の頭部が入るように、例えばねじ5の頭部の径より大きい径を有するものであればよく、絶縁基板2の貫通孔2aの径に比較して小さくても、同じでも、あるいは大きくてもよい。   In the second wiring board 1 of the present invention, the through-hole 2a of the insulating substrate 2 is, for example, the head of the screw 5 so that the first metal plate 3 can be deformed so as to reduce the force of tightening the screw 5. It has a diameter larger than the diameter of the part. Further, the through-hole 3a of the first metal plate 3 has, for example, a diameter larger than the diameter of the head of the screw 5 so that the screw 5 can be passed and the first metal plate 3 can be pressed by the head of the screw 5. It is smaller and larger than the diameter of the screw portion of the screw 5 and smaller than the diameter of the through hole 2 a of the insulating substrate 2. The through hole 4a of the second metal plate 4 may have any diameter larger than the diameter of the head of the screw 5, for example, so that the head of the screw 5 used for fixing enters. It may be smaller, the same or larger than the diameter of 2a.

上述した本発明の第1の配線基板1の第1の金属板3と同様の理由で、第2の金属板4(の接合部)を絶縁基板2の貫通孔2aの外周より外側に配置するように、絶縁基板2の貫通孔2aの径に比較して大きい貫通孔4aとするのが好ましい。また、同様に、第2の金属板4の貫通孔4aの大きさを絶縁基板2の貫通孔2aと同じかそれ以下とする場合は、第2の金属板4と絶縁基板2との接合部の位置、すなわち活性金属ろう材やメタライズの位置を絶縁基板2の貫通孔2aの外周より外側に設ければよい。さらに、図2(b)に示すように、第1の金属板3との接合部の位置についても絶縁基板2の貫通孔2aの外周より外側に設けるのが好ましい。この場合は、絶縁基板2に第1の金属板3を接合した際だけでなく、ねじ5を締め付けて配線基板1を実装基板6に固定する際にも、絶縁基板2の貫通孔2aの外周部に締め付け力が加わりにくくすることができる。このように接合部を絶縁基板2の貫通孔2aの外周より外側に設ける場合は、上記と同様の理由で、絶縁基板2の貫通孔2aの外周から50μm以上外側に、より好ましくは100μm以上外側に設けるのが好ましい。   For the same reason as the first metal plate 3 of the first wiring board 1 of the present invention described above, the second metal plate 4 (joining part thereof) is arranged outside the outer periphery of the through hole 2a of the insulating substrate 2. Thus, it is preferable to make the through hole 4 a larger than the diameter of the through hole 2 a of the insulating substrate 2. Similarly, when the size of the through hole 4a of the second metal plate 4 is the same as or smaller than that of the through hole 2a of the insulating substrate 2, the joint between the second metal plate 4 and the insulating substrate 2 is used. That is, the position of the active metal brazing material or metallization may be provided outside the outer periphery of the through hole 2a of the insulating substrate 2. Further, as shown in FIG. 2B, it is preferable that the position of the joint portion with the first metal plate 3 is also provided outside the outer periphery of the through hole 2 a of the insulating substrate 2. In this case, not only when the first metal plate 3 is joined to the insulating substrate 2 but also when the screw 5 is tightened to fix the wiring substrate 1 to the mounting substrate 6, the outer periphery of the through hole 2 a of the insulating substrate 2. Tightening force can be made difficult to be applied to the part. Thus, when providing a junction part outside the outer periphery of the through-hole 2a of the insulating substrate 2, for the same reason as described above, the outer periphery of the through-hole 2a of the insulating substrate 2 is more than 50 μm outside, more preferably more than 100 μm outside. It is preferable to provide in.

また、本発明の第3の配線基板1は、図3または図4に示すように、電子部品が搭載される側の第1の面2A、実装基板6に対向する側の第2の面2Bおよびねじ5を通すための貫通孔2aを有する絶縁基板2と、この絶縁基板2の第1の面2Aに設けられ、絶縁基板2の貫通孔2Aに対応した絶縁基板2の貫通孔2aより小さい貫通孔3aを有する第1の金属板3と、絶縁基板2の第2の面2Bに設けられ、絶縁基板2の貫通孔2aに対応した第1の金属板3の貫通孔3aより小さい貫通孔4aを有する第2の金属板4とを備えることを特徴とするものである。   Further, as shown in FIG. 3 or FIG. 4, the third wiring board 1 of the present invention includes a first surface 2 </ b> A on the side where electronic components are mounted and a second surface 2 </ b> B on the side facing the mounting substrate 6. And an insulating substrate 2 having a through-hole 2a through which the screw 5 is passed, and a smaller one than the through-hole 2a of the insulating substrate 2 provided on the first surface 2A of the insulating substrate 2 and corresponding to the through-hole 2A of the insulating substrate 2 A first metal plate 3 having a through hole 3a and a through hole smaller than the through hole 3a of the first metal plate 3 provided on the second surface 2B of the insulating substrate 2 and corresponding to the through hole 2a of the insulating substrate 2 And a second metal plate 4 having 4a.

本発明の第3の配線基板によれば、絶縁基板2の電子部品が搭載される側の第1の面2Aに設けられ、絶縁基板2の貫通孔2aに対応した絶縁基板2の貫通孔2aより小さい貫通孔3aを有する第1の金属板3と、絶縁基板2の実装基板6に対向する側の第2の面2Bに設けられた、絶縁基板2の貫通孔2aに対応した第1の金属板3の貫通孔3aより小さい貫通孔4aを有する第2の金属板4とを備えることから、実装基板6に配線基板1をねじ5で固定する場合に、図3または図4に示すように、ねじ5を絶縁基板2の貫通孔2aに通してねじ5の頭部等で第1の金属板3の貫通孔3aの周辺部を押えるとともに第2の金属板4の貫通孔4aの周辺部を押えて固定することができるので、絶縁基板2に加わるねじを締め付ける力を第1の金属板3が変形することにより低減するとともに、絶縁基板2に力を加えることなく第2の金属板を押えて配線基板1を固定することができる。従って、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板2にクラックが発生することを抑制できる。   According to the third wiring board of the present invention, the through hole 2a of the insulating substrate 2 is provided on the first surface 2A on the side where the electronic component of the insulating substrate 2 is mounted and corresponds to the through hole 2a of the insulating substrate 2. A first metal plate 3 having a smaller through-hole 3a and a first hole corresponding to the through-hole 2a of the insulating substrate 2 provided on the second surface 2B of the insulating substrate 2 on the side facing the mounting substrate 6 3 or 4 when the wiring board 1 is fixed to the mounting board 6 with the screws 5, since the second metal board 4 having a through hole 4a smaller than the through hole 3a of the metal plate 3 is provided. Further, the screw 5 is passed through the through hole 2a of the insulating substrate 2 and the periphery of the through hole 3a of the first metal plate 3 is pressed by the head of the screw 5 and the periphery of the through hole 4a of the second metal plate 4 Since the portion can be pressed and fixed, the force for tightening the screw applied to the insulating substrate 2 is the first Together is the genus plate 3 reduces by deforming, it can be fixed to the wiring board 1 by pressing the second metal plate without applying a force to the insulating substrate 2. Therefore, due to the tightening force when the wiring substrate 1 is fixed to the mounting substrate 6 with the screw 5 and the thermal stress due to the temperature cycle load when the electronic component such as a semiconductor element is mounted and fixed to the mounting substrate 6, Generation of cracks in the insulating substrate 2 can be suppressed.

本発明の第3の配線基板1を実装基板6に固定するには、図3に示すような、第1の金属板3の貫通孔3aの周辺部を押える通常の頭部(第1の頭部)と、第2の金属板4の貫通孔4aの周辺部を押える、第1の頭部とねじ部との間にそれらの中間の太さの第2の頭部とからなる2段の頭部を有するねじ5を用いて固定したり、図4に示すように、第2の金属板4の貫通孔4aの周辺部を押えるリング7に、第1の金属板3の貫通孔3aの周辺部を押える通常の1段の頭部(第1の頭部)を有するねじ5を通して固定したりすればよい。   In order to fix the third wiring board 1 of the present invention to the mounting board 6, a normal head (first head) that presses the peripheral part of the through hole 3 a of the first metal plate 3 as shown in FIG. Part) and a second head having a middle thickness between the first head and the threaded portion that presses the periphery of the through hole 4a of the second metal plate 4 As shown in FIG. 4, the screw 7 having a head is fixed to the ring 7 that holds the periphery of the through hole 4 a of the second metal plate 4, and the through hole 3 a of the first metal plate 3 is What is necessary is just to fix through the screw 5 which has the normal 1 step | paragraph head (1st head) which presses a periphery part.

本発明の第3の配線基板1において、絶縁基板2の貫通孔2aは、第2の配線基板1と同様に、ねじ5を締め付ける力を低減するように第1の金属板3が変形することができるように、例えばねじ5の第1の頭部の径より大きい径を有するものである。また、第1の金属板3の貫通孔3aも第2の配線基板1と同様に、ねじ5を通すとともにねじ5の第1の頭部で第1の金属板3を押えられるように、例えばねじ5の第1の頭部の径より小さくねじ5の第2の頭部またはリング7より径が大きく、絶縁基板2の貫通孔2aの径より小さい径を有するものである。第2の金属板4の貫通孔4aは、第1の配線基板1と同様に、ねじ5のねじ部を通すとともにねじ5の第2の頭部またはリング7で第2の金属板4を押えられるように、例えばねじ5の第2の頭部またはリング7の径より小さく、ねじ5のねじ部より径の大きい径を有するものである。   In the third wiring substrate 1 of the present invention, the first metal plate 3 is deformed so that the through-hole 2a of the insulating substrate 2 reduces the force of tightening the screw 5 in the same manner as the second wiring substrate 1. For example, it has a diameter larger than the diameter of the first head of the screw 5. Further, similarly to the second wiring board 1, the through hole 3a of the first metal plate 3 also allows the screw 5 to pass and the first metal plate 3 to be pressed by the first head of the screw 5, for example. The diameter is smaller than the diameter of the first head of the screw 5 and larger than the diameter of the second head of the screw 5 or the ring 7 and smaller than the diameter of the through hole 2 a of the insulating substrate 2. The through hole 4 a of the second metal plate 4 allows the threaded portion of the screw 5 to pass through and holds the second metal plate 4 with the second head or ring 7 of the screw 5, as in the first wiring board 1. For example, the diameter of the second head of the screw 5 or the diameter of the ring 7 is smaller than that of the screw portion of the screw 5.

また、図3(b)に示すように、絶縁基板2と第1の金属板3との接合部および絶縁基板2と第2の金属板4との接合部の位置は、上記と同様の理由で、絶縁基板2の貫通孔2aの外周より外側に設けるのが好ましい。この場合も同様に接合部を絶縁基板2の貫通孔2aの外周より外側に設ける場合は、絶縁基板2の貫通孔2aの外周から50μm以上外側に、より好ましくは100μm以上外側に設けるのが好ましい。   Further, as shown in FIG. 3B, the positions of the joint between the insulating substrate 2 and the first metal plate 3 and the joint between the insulating substrate 2 and the second metal plate 4 are the same as described above. Thus, it is preferable that the insulating substrate 2 is provided outside the outer periphery of the through hole 2a. In this case as well, when the joining portion is provided outside the outer periphery of the through hole 2a of the insulating substrate 2, it is preferable to provide the outer periphery of the through hole 2a of the insulating substrate 2 by 50 μm or more, more preferably by 100 μm or more. .

また、本発明の電子装置は、本発明の第1〜第3のいずれかの配線基板1の第1の面2A側に電子部品が搭載されてなり、絶縁基板2の貫通孔2aに通されたねじ5の頭部で第1の金属板3または第2の金属板4を押えて実装基板6に固定されることを特徴とするものである。このような構成としたことから、絶縁基板2に加わるねじ5を締め付ける力を第1金属板3または第2の金属板4により低減して配線基板1が実装基板6に固定されるので、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板1にクラックが発生することが抑制され、信頼性の高い電子装置となる。   The electronic device according to the present invention has electronic components mounted on the first surface 2A side of any one of the first to third wiring boards 1 according to the present invention, and is passed through the through hole 2a of the insulating substrate 2. The first metal plate 3 or the second metal plate 4 is pressed by the head of the screw 5 and fixed to the mounting substrate 6. Since such a configuration is adopted, the force for tightening the screw 5 applied to the insulating substrate 2 is reduced by the first metal plate 3 or the second metal plate 4 so that the wiring substrate 1 is fixed to the mounting substrate 6. The insulating substrate 1 is caused by a tightening force when the substrate 1 is fixed to the mounting substrate 6 with the screws 5 or thermal stress due to a temperature cycle load when an electronic component such as a semiconductor element is mounted and fixed to the mounting substrate 6. The occurrence of cracks is suppressed and a highly reliable electronic device is obtained.

また、本発明の電子装置は、本発明の第3の配線基板1の第1の面2A側に電子部品が搭載されてなり、絶縁基板2の貫通孔2aに通された、第1の金属板3を押える第1のねじ頭部と第2の金属板4を押える第2のねじ頭部とを有するねじ5で第1の金属板3および第2の金属板4を押えて実装基板6に固定されることを特徴とするものである。このような構成としたことから、配線基板1は絶縁基板2に加わるねじ5の締め付け力を低減して第1の金属板3および第2の金属板4の両方を押えて確実に実装基板6に固定されるので、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により絶縁基板2にクラックが発生することが抑制され、信頼性の高い電子装置となる。   The electronic device according to the present invention includes a first metal that has an electronic component mounted on the first surface 2A side of the third wiring substrate 1 according to the present invention, and is passed through the through hole 2a of the insulating substrate 2. The mounting substrate 6 holds the first metal plate 3 and the second metal plate 4 with a screw 5 having a first screw head for pressing the plate 3 and a second screw head for pressing the second metal plate 4. It is characterized by being fixed to. With such a configuration, the wiring board 1 reduces the tightening force of the screw 5 applied to the insulating substrate 2 and presses both the first metal plate 3 and the second metal plate 4 to ensure the mounting substrate 6. Depending on the tightening force when the wiring board 1 is fixed to the mounting board 6 with the screws 5 and the temperature cycle load when the electronic component such as a semiconductor element is mounted on the mounting board 6 and used. The occurrence of cracks in the insulating substrate 2 due to thermal stress is suppressed, and a highly reliable electronic device is obtained.

このときのねじ5の頭部は、図3に示す例のように、第1の金属板3を押える第1のねじ頭部および第2の金属板4を押える第2のねじ頭部を有する2段構造となる。ねじ5は、例えば図3に示す例のように、第1のねじ頭部は第1の金属板3の貫通孔3aよりも径が大きく、絶縁基板2の貫通孔2aよりも径が小さいものであり、第2のねじ頭部は第1の金属板3の貫通孔3aよりも径が小さく、第2の金属板4の貫通孔4aよりも径が大きいものである。ねじ5の頭部は第1の頭部の第1の金属板3を押える座面が第1の金属板3の貫通孔3aより大きく、第2の頭部の第2の金属板4を押える座面が第2の金属板4の貫通孔4aより大きければよく、第1の頭部の座面から第2の頭部の座面にかけての形状は、第1の金属板3の貫通孔3aを通すことができれば特に制限はない。例えば、図3に示す例のような、第1の頭部の第1の金属板3を押える座面から第2の頭部の第2の金属板4を押える座面までの間においてその太さが同じ形状、すなわち第2の頭部の厚みが第1の頭部の座面から第2の頭部の座面までの距離に等しい形状でもよいし、図4(b)と同様の図5に示す例のような、第2の頭部の厚みが薄く、第1の頭部と第2の頭部との間が2つの頭部より細い形状でもよい。   The head of the screw 5 at this time has a first screw head for pressing the first metal plate 3 and a second screw head for pressing the second metal plate 4 as in the example shown in FIG. It becomes a two-stage structure. For example, as shown in FIG. 3, the screw 5 has a first screw head having a diameter larger than that of the through hole 3 a of the first metal plate 3 and smaller than that of the through hole 2 a of the insulating substrate 2. The diameter of the second screw head is smaller than the diameter of the through hole 3 a of the first metal plate 3 and larger than the diameter of the through hole 4 a of the second metal plate 4. The head of the screw 5 has a seating surface that holds the first metal plate 3 of the first head larger than the through hole 3a of the first metal plate 3, and presses the second metal plate 4 of the second head. The seat surface only needs to be larger than the through hole 4a of the second metal plate 4, and the shape from the seat surface of the first head to the seat surface of the second head is the through hole 3a of the first metal plate 3. There is no particular limitation as long as it can be passed. For example, as shown in FIG. 3, the thickness between the seat surface that holds the first metal plate 3 of the first head and the seat surface that holds the second metal plate 4 of the second head is thick. The shape of the second head may be equal to the distance from the seating surface of the first head to the seating surface of the second head, or the same diagram as FIG. The thickness of the second head as in the example shown in FIG. 5 may be small, and the shape between the first head and the second head may be narrower than the two heads.

ねじ5の頭部が2段構造の場合には、第1の頭部の座面から第2の頭部の座面までの距離(図3に示す例における第2の頭部の厚み)は、第1の金属板3のねじ5の第1の頭部の座面と接する面(図3に示す例における第1の金属板3の上面)から第2の金属板4の絶縁基板2側の面(図3における第2の金属板4の上面)までの距離(第1の金属板3の厚みと絶縁基板2の厚みと絶縁基板2の両面に位置する活性金属ろう材またはろう材およびメタライズ層の厚みとを足した厚み)と同等または、それより若干小さくするのが好ましい。これにより、第1の金属板3および第2の金属板4の両方を押えて配線基板1を実装基板6に確実に固定することができ、配線基板1に実装される電子部品を正常かつ安定に作動させることのできるものとなる。   When the head of the screw 5 has a two-stage structure, the distance from the seating surface of the first head to the seating surface of the second head (the thickness of the second head in the example shown in FIG. 3) is The surface of the first metal plate 3 that contacts the seating surface of the first head of the screw 5 (the upper surface of the first metal plate 3 in the example shown in FIG. 3) from the insulating substrate 2 side of the second metal plate 4 Active metal brazing material or brazing material located on both surfaces of the surface (the thickness of the first metal plate 3, the thickness of the insulating substrate 2, and the insulating substrate 2) and the surface (the upper surface of the second metal plate 4 in FIG. 3) It is preferable that the thickness is equal to or slightly smaller than the thickness obtained by adding the thickness of the metallized layer. Thereby, both the first metal plate 3 and the second metal plate 4 can be pressed to securely fix the wiring board 1 to the mounting board 6, and the electronic components mounted on the wiring board 1 can be normally and stably. It will be possible to operate.

また、本発明の電子装置は、本発明の第3の配線基板の第1の面2A側に電子部品が搭載されてなり、絶縁基板2の貫通孔2aに通された、第1の金属板3を押えるねじ頭部を有するねじ5およびこのねじ5が通され第2の金属板4を押えるリング7で第1の金属板3および第2の金属板4を押えて実装基板6に固定されることを特徴とするものである。このような構成としたことから、一般的な形状のねじ5を用いて、より容易に絶縁基板2に加わるねじの締め付け力を低減して第1の金属板3および第2の金属板4の両方を押えて確実に固定され、配線基板1をねじ5で実装基板6に固定する際の締め付け力や、半導体素子等の電子部品を搭載して実装基板6に固定して使用した際の温度サイクル負荷による熱応力により、絶縁基板2にクラックが発生することが抑制され、信頼性の高い電子装置となる。   Further, the electronic device of the present invention is a first metal plate in which an electronic component is mounted on the first surface 2A side of the third wiring board of the present invention and passed through the through hole 2a of the insulating substrate 2. A screw 5 having a screw head for holding 3 and a ring 7 through which the screw 5 is passed to hold down the second metal plate 4 hold the first metal plate 3 and the second metal plate 4 and are fixed to the mounting substrate 6. It is characterized by that. Since it was set as such a structure, using the screw 5 of a general shape, the clamping force of the screw applied to the insulating substrate 2 can be reduced more easily, and the first metal plate 3 and the second metal plate 4 can be reduced. The clamping force when the wiring board 1 is fixed to the mounting board 6 with the screws 5 and the temperature when the electronic parts such as semiconductor elements are mounted and fixed to the mounting board 6 are used. The occurrence of cracks in the insulating substrate 2 due to the thermal stress due to the cycle load is suppressed, and a highly reliable electronic device is obtained.

この場合のねじ5は、本発明の第2の配線基板1を押えるのと同様のねじ5、すなわち第1の金属板3の貫通孔3aより大きい頭部と、第2の金属板4の貫通孔4aより小さいねじ部とを有するものを使用すればよい。また、リング7は、その外径は第1の金属板3の貫通孔3aより小さく、第2の金属板4の貫通孔4aより大きいものであり、内径はねじ5が通るようにねじ5のねじ部より大きいものである。リング7の厚みは、第1の金属板3のねじ5の第1の頭部の座面と接する面(図3に示す例における第1の金属板3の上面)から第2の金属板4の絶縁基板2側の面(図3に示す例における第2の金属板4の上面)までの距離(第1の金属板3の厚みと絶縁基板2の厚みと絶縁基板2の両面に位置する活性金属ろう材またはろう材およびメタライズ層の厚みとを足した厚み)と同等または、それより若干小さくするのが好ましい。また、リング7は、第1の金属板3および第2の金属板4よりも、硬度が高い金属、例えば第1の金属板3および第2の金属板4が銅からなる場合は鋼やステンレス鋼等であると、ねじ5の締め付けにより確実に第2の金属板4を押えることができるので望ましい。このようなねじ5およびリング7を用いることにより、第1の金属板3および第2の金属板4の両方を押えて本発明の第3の配線基板1を実装基板6に確実に固定することができ、配線基板1に実装される電子部品を正常かつ安定に作動させることのできるものとなる。   The screw 5 in this case is the same screw 5 that holds down the second wiring board 1 of the present invention, that is, the head larger than the through hole 3a of the first metal plate 3, and the second metal plate 4 penetrating. What has a thread part smaller than the hole 4a should just be used. The outer diameter of the ring 7 is smaller than the through hole 3a of the first metal plate 3 and larger than the through hole 4a of the second metal plate 4, and the inner diameter of the ring 5 is such that the screw 5 passes therethrough. It is larger than the threaded part. The thickness of the ring 7 is such that the surface of the screw 5 of the first metal plate 3 is in contact with the seating surface of the first head (the upper surface of the first metal plate 3 in the example shown in FIG. 3) and the second metal plate 4. The distance to the surface on the insulating substrate 2 side (the upper surface of the second metal plate 4 in the example shown in FIG. 3) (the thickness of the first metal plate 3, the thickness of the insulating substrate 2, and the both surfaces of the insulating substrate 2) The thickness is preferably equal to or slightly smaller than the active metal brazing material or the brazing material plus the thickness of the metallized layer. The ring 7 is made of a metal having higher hardness than the first metal plate 3 and the second metal plate 4, for example, steel or stainless steel when the first metal plate 3 and the second metal plate 4 are made of copper. Steel or the like is desirable because the second metal plate 4 can be reliably pressed by tightening the screws 5. By using the screw 5 and the ring 7 as described above, both the first metal plate 3 and the second metal plate 4 are pressed to securely fix the third wiring board 1 of the present invention to the mounting board 6. Thus, electronic components mounted on the wiring board 1 can be operated normally and stably.

絶縁基板2は、略四角形状であり、第1の金属板3および第2の金属板4を支持する支持部材として機能する。このような絶縁基板2は電気絶縁材料からなり、例えば、酸化アルミニウム質焼結体,ムライト質焼結体,炭化珪素質焼結体,窒化アルミニウム質焼結体,窒化珪素質焼結体等のセラミックスからなる。これらの中では熱伝導性(放熱性)の点からは炭化珪素質焼結体,窒化アルミニウム質焼結体,窒化珪素質焼結体が好ましく、強度の点からは窒化珪素質焼結体が好ましい。厚みは、薄い方が熱伝導性の点ではよいが、配線基板1の大きさや用いる材料の熱伝導率や強度に応じて選択すればよく、0.3mm〜3mm程度である。絶縁基板2が例えば、窒化珪素質焼結体から成る場合であれば、窒化珪素,酸化アルミニウム,酸化マグネシウム,酸化イットリウム等の原料粉末に適当な有機バインダ,可塑剤,溶剤を添加混合して得た泥漿物にドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、これを窒素雰囲気等の非酸化性雰囲気にて1600〜2000℃の温度で焼成することによって製作される。   The insulating substrate 2 has a substantially quadrangular shape and functions as a support member that supports the first metal plate 3 and the second metal plate 4. Such an insulating substrate 2 is made of an electrically insulating material, such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body. Made of ceramics. Among these, silicon carbide sintered bodies, aluminum nitride sintered bodies, and silicon nitride sintered bodies are preferable from the viewpoint of thermal conductivity (heat dissipation), and silicon nitride sintered bodies are preferable from the viewpoint of strength. preferable. The thinner the thickness, the better in terms of thermal conductivity, but it may be selected according to the size of the wiring board 1 and the thermal conductivity and strength of the material used, and is about 0.3 mm to 3 mm. If the insulating substrate 2 is made of, for example, a silicon nitride sintered body, an appropriate organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, and yttrium oxide. The ceramic green sheet (ceramic raw sheet) is formed by applying the doctor blade method and the calender roll method to the sludge, and then the ceramic green sheet is appropriately punched into a predetermined shape. Accordingly, a plurality of sheets are laminated to form a molded body, and thereafter, this is manufactured by firing at a temperature of 1600 to 2000 ° C. in a non-oxidizing atmosphere such as a nitrogen atmosphere.

絶縁基板2のねじ5を通すための貫通孔2aは、用いるねじ5のねじ頭の径よりも大きいものである。その平面視の形状は、特に制限はなく、三角形や四角形またはそれ以上の多角形、あるいは円形や楕円形でもよい。貫通孔2を起点としたクラックの発生を防止するためには応力の集中しにくい形状が好ましい。応力の集中しやすい角の角度が直角より大きくなる六角形以上の多角形が好ましく、より好ましくは応力の集中しやすい角部を有さない楕円形や円形がよく、曲率半径が一定で応力の集中しやすい部分のない円形が最適である。   The through hole 2a for passing the screw 5 of the insulating substrate 2 is larger than the diameter of the screw head of the screw 5 to be used. The shape in plan view is not particularly limited, and may be a triangle, a quadrangle or a polygon more than that, or a circle or an ellipse. In order to prevent the occurrence of cracks starting from the through hole 2, a shape in which stress is difficult to concentrate is preferable. A hexagonal or more polygonal shape where the angle at which stress tends to concentrate is greater than a right angle is preferred, and more preferably an ellipse or circle with no corners where stress is likely to concentrate, with a constant radius of curvature and stress. A circle with no concentrating parts is optimal.

絶縁基板2の貫通孔2aは、絶縁基板2を作製する際にセラミックグリーンシートに打ち抜き加工やレーザー加工等により貫通孔を形成しておき、焼成することにより形成してもよいし、貫通孔2aを有さない絶縁基板2を作製した後、例えば、二酸化炭素レーザーを用いたレーザー加工や研削加工等の機械加工により形成してもよい。絶縁基板2を作製する際に複数のセラミックグリーンシートを積層して作製する場合は、貫通孔を形成したセラミックグリーンシートを位置合わせして積層してもよいし、複数のセラミックグリーンシートを積層した成形体を貫通するような貫通孔を形成してもよい。積層位置ずれにより貫通孔2aの縦断面において角部が形成されると、そこに応力が集中しやすくなるので、成形体に貫通孔を形成するほうが好ましい。また、同様の理由で貫通孔2aを有さない絶縁基板2を作製した後に貫通孔2aを形成するのが好ましく、この場合は焼成収縮ばらつきによる貫通孔2aの絶縁基板2内での位置ずれもないのでより好ましい。   The through-hole 2a of the insulating substrate 2 may be formed by forming a through-hole in the ceramic green sheet by punching or laser processing when the insulating substrate 2 is manufactured, and firing the through-hole 2a. After the insulating substrate 2 having no slab is produced, the insulating substrate 2 may be formed by mechanical processing such as laser processing or grinding using a carbon dioxide laser. When the insulating substrate 2 is manufactured by stacking a plurality of ceramic green sheets, the ceramic green sheets having through holes may be aligned and stacked, or a plurality of ceramic green sheets may be stacked. You may form a through-hole which penetrates a molded object. If corners are formed in the longitudinal section of the through-hole 2a due to the stacking position shift, stress is likely to concentrate there, so it is preferable to form the through-holes in the molded body. For the same reason, it is preferable to form the through-hole 2a after the insulating substrate 2 having no through-hole 2a is formed. In this case, the positional displacement of the through-hole 2a in the insulating substrate 2 due to variations in firing shrinkage is also caused. Since there is no, it is more preferable.

絶縁基板2の貫通孔2aの配置(数および位置)は、配線基板1の大きさや第1の金属板3の配線パターン形状等により適宜設定すればよいが、四角形の配線基板1であれば少なくとも4隅に設けられる。   The arrangement (number and position) of the through-holes 2a of the insulating substrate 2 may be set as appropriate depending on the size of the wiring substrate 1, the wiring pattern shape of the first metal plate 3, and the like. Provided at four corners.

第1の金属板3および第2の金属板4は、銅やアルミニウム等の金属から成り、例えば銅のインゴット(塊)に圧延加工法や打ち抜き加工法等の機械的加工やエッチング等の化学的加工のような従来周知の金属加工法を施すことによって、例えば厚さが0.05〜1mmの平板状で、所定パターンに形成される。このとき、第1の金属板3および第2の金属板4の形状は、配線基板1の配線パターン形状に形成してもよいし、後述するように第1の金属板3および第2の金属板4を絶縁基板2に接合した後にエッチングで配線パターン形状に加工する場合は、絶縁基板2と同程度の大きさおよび形状に形成すればよい。   The first metal plate 3 and the second metal plate 4 are made of a metal such as copper or aluminum. For example, a copper ingot (lumb) is chemically processed by mechanical processing such as rolling or punching or etching. By applying a conventionally known metal processing method such as processing, for example, a flat plate having a thickness of 0.05 to 1 mm is formed into a predetermined pattern. At this time, the shape of the first metal plate 3 and the second metal plate 4 may be formed in the shape of the wiring pattern of the wiring board 1, or the first metal plate 3 and the second metal as will be described later. When the plate 4 is bonded to the insulating substrate 2 and then processed into a wiring pattern shape by etching, it may be formed in the same size and shape as the insulating substrate 2.

図6(a)は本発明の実施の形態の一例の要部を示す平面図であり、図6(b)は断面図である。第1の金属板3の貫通孔3aおよび第2の金属板4の貫通孔4aは、第1の金属板3および第2の金属板4のパターン形成時に同時に形成されるが、このパターン形状によっては、1つの金属板に設けられた貫通孔ではなく、複数の金属板により貫通孔の外周(図6に1点鎖線で示す。)が形成されたものであってもよい。   FIG. 6A is a plan view showing a main part of an example of the embodiment of the present invention, and FIG. 6B is a cross-sectional view. The through hole 3a of the first metal plate 3 and the through hole 4a of the second metal plate 4 are formed at the same time when the patterns of the first metal plate 3 and the second metal plate 4 are formed. May be one in which the outer periphery of the through hole (shown by a one-dot chain line in FIG. 6) is formed by a plurality of metal plates instead of the through hole provided in one metal plate.

また第1の金属板3および第2の金属板4は、その表面にニッケルから成る良導電性で、かつ耐蝕性および活性金属ろう材との濡れ性が良好な金属をめっき法により被着させておくと、第1の金属板3および第2の金属板4と外部電気回路との電気的接続を良好なものとするとともに、第1の金属板3に半導体素子等の電子部品を半田を介して強固に接着させることができる。この場合は、内部に燐を8〜15質量%含有させてニッケル−燐のアモルファス合金としておくと、ニッケルから成るめっき層の表面酸化を良好に防止して活性金属ろう材との濡れ性等を長く維持することができるので好ましい。ニッケルに対する燐の含有量が8質量%未満となると、あるいは15質量%を超えると、ニッケル−燐のアモルファス合金を形成するのが困難となってめっき層に半田を強固に接着させることができなくなりやすい。このニッケルから成るめっき層は、その厚みが1.5μm未満の場合には、第1の金属板3および第2の金属板4の表面を完全に被覆することができず、第1の金属板3および第2の金属板4の酸化腐蝕を有効に防止することができなくなりやすい傾向がある。また、3μmを超えると、特に絶縁基板2の厚さが700μm以下の薄いものになった場合には、めっき層の内部に内在する内在応力が大きくなって絶縁基板2に反りや割れ等が発生しやすくなってしまう。   Further, the first metal plate 3 and the second metal plate 4 are coated by plating with a metal having good conductivity made of nickel and having good corrosion resistance and wettability with the active metal brazing material. In this case, the first metal plate 3 and the second metal plate 4 are electrically connected to the external electric circuit, and an electronic component such as a semiconductor element is soldered to the first metal plate 3. It can be made to adhere firmly through. In this case, if an amorphous alloy of nickel-phosphorus is prepared by containing phosphorus in an amount of 8 to 15% by mass, surface oxidation of the plating layer made of nickel is prevented satisfactorily and wettability with the active metal brazing material is improved. This is preferable because it can be maintained for a long time. If the phosphorus content with respect to nickel is less than 8% by mass or more than 15% by mass, it becomes difficult to form an amorphous alloy of nickel-phosphorous, and the solder cannot be firmly adhered to the plating layer. Cheap. When the thickness of the plating layer made of nickel is less than 1.5 μm, the surfaces of the first metal plate 3 and the second metal plate 4 cannot be completely covered, and the first metal plate 3 And there is a tendency that the oxidative corrosion of the second metal plate 4 cannot be effectively prevented. If the thickness exceeds 3 μm, particularly when the thickness of the insulating substrate 2 is as thin as 700 μm or less, the internal stress inside the plating layer increases and warping or cracking occurs in the insulating substrate 2. It becomes easy to do.

第1の金属板3および第2の金属板4が銅から成り、絶縁基板2との接合を活性金属ろう材を用いて行なう場合は、これを無酸素銅で形成しておくことが好ましい。無酸素銅は活性金属ろう材を介して絶縁基板2に取着する際に銅の表面が銅中に存在する酸素により酸化されることなく活性金属ろう材との濡れ性が良好となるので、第1の金属板3および第2の金属板4の絶縁基板2への活性金属ろう材を介しての取着接合が強固となる。   When the first metal plate 3 and the second metal plate 4 are made of copper and the joining to the insulating substrate 2 is performed using an active metal brazing material, it is preferable to form this with oxygen-free copper. When oxygen-free copper is attached to the insulating substrate 2 via the active metal brazing material, the wettability with the active metal brazing material is improved without the copper surface being oxidized by oxygen present in the copper, The attachment joining of the first metal plate 3 and the second metal plate 4 to the insulating substrate 2 through the active metal brazing material is strengthened.

絶縁基板2と第1の金属板3および第2の金属板4との接合は、活性金属ろう材を用いて絶縁基板2上に直接接合してもよいし、絶縁基板2上にメタライズ層を形成しておき、その上にろう材を用いて接合してもよいし、あるいはセラミックスと銅板とを直接接合させる、いわゆるDBC(Direct Bond Copper)法を用いてもよい。   The insulating substrate 2 and the first metal plate 3 and the second metal plate 4 may be bonded directly to the insulating substrate 2 using an active metal brazing material, or a metallized layer may be formed on the insulating substrate 2. It may be formed and bonded using a brazing material, or a so-called DBC (Direct Bond Copper) method in which ceramics and a copper plate are directly bonded may be used.

第1の金属板3および第2の金属板4が銅から成り、活性金属ろう材を用いて絶縁基板2上に直接接合する場合は、例えば、絶縁基板2の第1の面2Aおよび第2の面2Bにそれぞれ活性金属ろう材ペーストをスクリーン印刷法を用いて、例えば30〜50μmの厚さで所定パターンに印刷塗布するとともに、第1の面2Aおよび第2の面2B上に所定パターンに印刷塗布された活性金属ろう材ペーストをそれぞれ第1の金属板3および第2の金属板4で挟んで載置した後、金属板に5〜10kPaの荷重をかけながら真空中または水素ガス雰囲気や水素・窒素ガス雰囲気等の非酸化性雰囲気中で780℃〜900℃、10〜120分間加熱し、金属ろう材ペーストの有機溶剤や溶媒・分散剤を気体に変えて発散させるとともに活性金属ろう材を溶融させることによって行なわれる。活性金属ろう材ペーストは、銀および銅粉末,銀−銅合金粉末,またはこれらの混合粉末から成る銀ろう材(例えば、銀:72質量%−銅:28質量%)粉末に対してチタン,ハフニウム,ジルコニウムまたはその水素化物等の活性金属を2〜5質量%加えて成る活性金属ろう材粉末と、適当な有機溶剤・溶媒とを添加混合し、混練することによって製作される。   When the first metal plate 3 and the second metal plate 4 are made of copper and bonded directly onto the insulating substrate 2 using an active metal brazing material, for example, the first surface 2A and the second surface 2 of the insulating substrate 2 are used. The active metal brazing paste is applied to a predetermined pattern with a thickness of, for example, 30 to 50 μm on each surface 2B using a screen printing method, and the predetermined pattern is formed on the first surface 2A and the second surface 2B. After the active metal brazing paste applied by printing is sandwiched between the first metal plate 3 and the second metal plate 4, respectively, the metal plate is subjected to a vacuum or hydrogen gas atmosphere while applying a load of 5 to 10 kPa. Active metal brazing filler metal is heated in a non-oxidizing atmosphere such as hydrogen / nitrogen gas atmosphere at 780 ° C to 900 ° C for 10 to 120 minutes to change the organic solvent, solvent / dispersant of the metal brazing paste into a gas, and emits it. By melting It is done. The active metal brazing paste is composed of silver and copper powder, silver-copper alloy powder, or a silver brazing material composed of these powders (for example, silver: 72% by mass—copper: 28% by mass), titanium, hafnium. , An active metal brazing powder obtained by adding 2 to 5% by mass of an active metal such as zirconium or a hydride thereof, and an appropriate organic solvent / solvent are added and mixed and kneaded.

第1の金属板3および第2の金属板4がアルミニウムから成る場合は、銀ろう材に換えてアルミニウムろう材(例えば、アルミニウム:88質量%−シリコン:12質量%)を用い、約600℃で加熱する。   When the first metal plate 3 and the second metal plate 4 are made of aluminum, an aluminum brazing material (for example, aluminum: 88% by mass—silicon: 12% by mass) is used instead of the silver brazing material, and the temperature is about 600 ° C. Heat with.

第1の金属板3および第2の金属板4が銅から成り、絶縁基板2上に形成したメタライズ層上にろう材を用いて接合する場合は、活性金属ろう材ペーストに換えて金属ろう材ペーストを用いて同様に行なえばよい。金属ろう材ペーストは、活性金属を含まない上記銀ろう材を用いればよい。絶縁基板2上のメタライズ層は、絶縁基板2を作製する際にセラミックグリーンシート上にメタライズペーストを所定パターン形状に印刷塗布しておき、焼成することにより形成してもよいし、絶縁基板2を作製した後、絶縁基板2上にメタライズペーストを所定パターン形状に印刷塗布しておき、焼き付けることにより形成してもよい。メタライズペーストは、タングステン(W),モリブデン(Mo),マンガン(Mn)またはこれらの混合粉末から成る金属粉末と、適当な有機溶剤・溶媒とを添加混合し、混練することによって製作される。また、第1の金属板3および第2の金属板4がアルミニウムから成る場合は、銀ろう材に換えてアルミニウムろう材(例えば、アルミニウム:88質量%−シリコン:12質量%)を用い、約600℃で加熱する。   When the first metal plate 3 and the second metal plate 4 are made of copper and are joined to the metallized layer formed on the insulating substrate 2 using a brazing material, the metal brazing material is replaced with an active metal brazing material paste. What is necessary is just to carry out similarly using a paste. As the metal brazing paste, the above-mentioned silver brazing material containing no active metal may be used. The metallized layer on the insulating substrate 2 may be formed by printing and applying a metallized paste in a predetermined pattern shape on a ceramic green sheet when the insulating substrate 2 is manufactured, and baking the insulating substrate 2. After the production, the metallized paste may be printed on the insulating substrate 2 in a predetermined pattern shape and baked. The metallized paste is manufactured by adding and mixing a metal powder composed of tungsten (W), molybdenum (Mo), manganese (Mn), or a mixed powder thereof, and an appropriate organic solvent / solvent, and kneading. When the first metal plate 3 and the second metal plate 4 are made of aluminum, an aluminum brazing material (for example, aluminum: 88% by mass—silicon: 12% by mass) is used instead of the silver brazing material, and about Heat at 600 ° C.

銅からなる第1の金属板3および第2の金属板4を絶縁基板2に接合した後にエッチングで配線パターン形状に加工する場合は、絶縁基板2上に接合された第1の金属板3および第2の金属板4の表面にエッチングレジストインクをスクリーン印刷法等の技術を採用して配線パターン形状に印刷塗布してレジスト膜を形成した後、塩化第2鉄,塩化第2銅溶液等のエッチング液に浸漬したり、エッチング液を吹き付けたりして第1の金属板3および第2の金属板4の配線パターン以外の部分を除去し、レジスト膜を除去すればよい。   When the first metal plate 3 and the second metal plate 4 made of copper are bonded to the insulating substrate 2 and then processed into a wiring pattern shape by etching, the first metal plate 3 bonded on the insulating substrate 2 and Etching resist ink is applied to the surface of the second metal plate 4 by screen printing or the like to form a resist film by printing and applying it to a wiring pattern shape, and then ferric chloride, cupric chloride solution, etc. The resist film may be removed by immersing in an etching solution or spraying an etching solution to remove portions other than the wiring patterns of the first metal plate 3 and the second metal plate 4.

上記のようにして作製した配線基板1に電子部品を搭載し、電気的に接続することで電子装置となる。電子部品としては、トランジスタ,CPU(Central Processing Unit)用のLSI(Large Scale Integrated circuit),IGBT(Insulated Gate Bipolar Transistor)やMOS−FET(Metal Oxide Semiconductor - Field Effect Transistor)等の半導体素子が挙げられる。電子部品は、半田やAu−Si合金等の金属接合材あるいは導電性樹脂で固定されて配線基板1に搭載され、ワイヤボンディング等の接続手段により電気的に接続される。   An electronic device is obtained by mounting electronic components on the wiring board 1 manufactured as described above and electrically connecting them. Examples of electronic components include transistors, semiconductor elements such as LSI (Large Scale Integrated circuit) for CPU (Central Processing Unit), IGBT (Insulated Gate Bipolar Transistor), and MOS-FET (Metal Oxide Semiconductor-Field Effect Transistor). . The electronic component is fixed on a metal bonding material such as solder or Au—Si alloy or a conductive resin, is mounted on the wiring board 1, and is electrically connected by connection means such as wire bonding.

本発明の電子装置をヒートシンク等の実装基板6に固定するためのねじ5としては、第1の金属板3および第2の金属板4を押えるための頭部を有するねじ5であれば特に制限はないが、本発明の第2の配線基板1を用いた電子装置の場合は、ねじ5の頭部が配線基板1上に突出しているので四角ボルト,六角ボルト等を用いてもよいが、本発明の第1または第3の配線基板1を用いた電子装置の場合は、ねじ5を締めるための工具が入るような大きな貫通孔2aを設ける必要のない、すりわり付きねじ,十字穴付きねじ,六角穴付きねじ等を用いるのが好ましい。   The screw 5 for fixing the electronic device of the present invention to a mounting substrate 6 such as a heat sink is not particularly limited as long as it is a screw 5 having a head for pressing the first metal plate 3 and the second metal plate 4. However, in the case of an electronic device using the second wiring board 1 of the present invention, a square bolt, a hexagon bolt, or the like may be used because the head of the screw 5 protrudes on the wiring board 1. In the case of an electronic device using the first or third wiring board 1 of the present invention, it is not necessary to provide a large through hole 2a into which a tool for tightening the screw 5 is inserted. It is preferable to use a screw, a hexagon socket head screw, or the like.

本発明の配線基板1および電子装置は上記のような実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で様々に変更することができる。例えば、本発明の配線基板1を実装基板6にねじ5で固定する形態としては、図7(a)および(b)に断面図で示すような形態も可能である。すなわち、第1の金属板3の貫通孔3aが絶縁基板2の貫通孔2aより小さい本発明の第1の配線基板1をねじ5で実装基板6に固定することにより、第1の金属板3を変形させて第2の金属板4と接触させるようにしてもよい。このようにすることで、容易に第1の金属板3と第2の金属板4との間で電気的導通をとることができる。このようにするには、第1の金属板3の貫通孔3aの周辺の厚みを薄くしておけばよく、例えば第1の金属板3を所定のパターン形状に加工した後に、貫通孔3aの周辺を再度エッチング加工することにより可能である。   The wiring board 1 and the electronic device of the present invention are not limited to the above-described embodiments, and can be variously modified without departing from the gist of the present invention. For example, as a form of fixing the wiring board 1 of the present invention to the mounting board 6 with the screws 5, a form as shown in cross-sectional views in FIGS. 7A and 7B is also possible. That is, by fixing the first wiring board 1 of the present invention to the mounting board 6 with the screw 5, the first metal board 3 is smaller than the through hole 2 a of the insulating board 2. May be deformed and brought into contact with the second metal plate 4. In this way, electrical conduction can be easily established between the first metal plate 3 and the second metal plate 4. In order to do this, the thickness of the periphery of the through hole 3a of the first metal plate 3 may be reduced. For example, after processing the first metal plate 3 into a predetermined pattern shape, This is possible by etching the periphery again.

また、第1の金属板3の貫通孔3aは、例えば絶縁基板2の貫通孔2aの径より、絶縁基板2の厚みと絶縁基板2の両面に位置する活性金属ろう材またはろう材およびメタライズ層の厚みとを足した厚み以上小さい径となる。より変形しやすくしてより絶縁基板2へ加わる応力を小さくするように、第1の金属板3の貫通孔3aの形状を、十字型等の絶縁基板2の貫通孔2aの中心から放射状に延びる形状としてもよい。また、第1の金属板3の貫通孔3aの周辺だけでなく、第1の金属板3全体を薄いものとすると、エッチング等の影響で第1の金属板3の硬度が硬くなることを防ぐことができるので、より絶縁基板2への応力を小さくすることができる。   Moreover, the through-hole 3a of the 1st metal plate 3 is the active metal brazing material or brazing material, and metallization layer which are located in the thickness of the insulating substrate 2, and both surfaces of the insulating substrate 2, for example from the diameter of the through-hole 2a of the insulating substrate 2. The diameter is smaller than the thickness of the thickness plus the thickness. The shape of the through hole 3a of the first metal plate 3 extends radially from the center of the through hole 2a of the insulating substrate 2 such as a cross shape so that the stress applied to the insulating substrate 2 can be reduced more easily. It is good also as a shape. In addition, if the entire first metal plate 3 is thin, not only around the through hole 3a of the first metal plate 3, the hardness of the first metal plate 3 is prevented from becoming hard due to the influence of etching or the like. Therefore, the stress on the insulating substrate 2 can be further reduced.

(a)は、本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)の要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board of this invention, (b) is a principal part expanded sectional view of (a). (a)は、本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)の要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board of this invention, (b) is a principal part expanded sectional view of (a). (a)は、本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)の要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board of this invention, (b) is a principal part expanded sectional view of (a). (a)は、本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)の要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board of this invention, (b) is a principal part expanded sectional view of (a). 図4(b)に示す本発明の配線基板の実施の形態の他の一例を示す要部拡大断面図である。It is a principal part expanded sectional view which shows another example of embodiment of the wiring board of this invention shown in FIG.4 (b). (a)は、本発明の配線基板の実施の形態の一例の要部を示す平面図であり、(b)は(a)をA−A線で切断した断面図である。(A) is a top view which shows the principal part of an example of embodiment of the wiring board of this invention, (b) is sectional drawing which cut | disconnected (a) by the AA line. (a)は、本発明の配線基板の実施の形態の一例を示す断面図であり、(b)は(a)の要部拡大断面図である。(A) is sectional drawing which shows an example of embodiment of the wiring board of this invention, (b) is a principal part expanded sectional view of (a).

符号の説明Explanation of symbols

1:配線基板
2:絶縁基板
2A:第1の面
2B:第2の面
2a:貫通孔
3:第1の金属板
3a:貫通孔
4:第2の金属板
4a:貫通孔
5:ねじ
6:実装基板
7:リング
1: Wiring substrate 2: Insulating substrate 2A: First surface 2B: Second surface 2a: Through hole 3: First metal plate 3a: Through hole 4: Second metal plate 4a: Through hole 5: Screw 6 : Mounting board 7: Ring

Claims (6)

電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、
該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した貫通孔を有する第1の金属板と、
前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第2の金属板と
を備えることを特徴とする配線基板。
An insulating substrate having a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and a through-hole for passing a screw;
A first metal plate provided on the first surface of the insulating substrate and having a through hole corresponding to the through hole of the insulating substrate;
And a second metal plate provided on the second surface of the insulating substrate and having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate. substrate.
電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、
該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第1の金属板と、
前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した貫通孔を有する第2の金属板と
を備えることを特徴とする配線基板。
An insulating substrate having a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and a through-hole for passing a screw;
A first metal plate provided on the first surface of the insulating substrate and having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate;
A wiring board comprising: a second metal plate provided on the second surface of the insulating substrate and having a through hole corresponding to the through hole of the insulating substrate.
電子部品が搭載される側の第1の面、実装基板に対向する側の第2の面およびねじを通すための貫通孔を有する絶縁基板と、
該絶縁基板の前記第1の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記絶縁基板の前記貫通孔より小さい貫通孔を有する第1の金属板と、
前記絶縁基板の前記第2の面に設けられ、前記絶縁基板の前記貫通孔に対応した前記第1の金属板の前記貫通孔より小さい貫通孔を有する第2の金属板と
を備えることを特徴とする配線基板。
An insulating substrate having a first surface on which an electronic component is mounted, a second surface on the side facing the mounting substrate, and a through-hole for passing a screw;
A first metal plate provided on the first surface of the insulating substrate and having a through hole smaller than the through hole of the insulating substrate corresponding to the through hole of the insulating substrate;
A second metal plate provided on the second surface of the insulating substrate and having a through hole smaller than the through hole of the first metal plate corresponding to the through hole of the insulating substrate. Wiring board.
請求項1〜3のいずれかに記載の配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の前記貫通孔に通された前記ねじの頭部で前記第1の金属板または前記第2の金属板を押えて前記実装基板に固定されることを特徴とする電子装置。 The electronic component is mounted on the first surface side of the wiring board according to any one of claims 1 to 3, and the first screw head passed through the through hole of the insulating substrate. An electronic device, wherein the metal plate or the second metal plate is pressed and fixed to the mounting substrate. 請求項3に記載の配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の前記貫通孔に通された、前記第1の金属板を押える第1のねじ頭部および前記第2の金属板を押える第2のねじ頭部を有するねじで前記第1の金属板および前記第2の金属板を押えて前記実装基板に固定されることを特徴とする電子装置。 A first screw head for holding the first metal plate, wherein the electronic component is mounted on the first surface side of the wiring board according to claim 3 and passed through the through hole of the insulating substrate. And an electronic device characterized in that the first metal plate and the second metal plate are pressed and fixed to the mounting substrate with a screw having a second screw head for pressing the first metal plate and the second metal plate. . 請求項3に記載の配線基板の前記第1の面側に前記電子部品が搭載されてなり、前記絶縁基板の貫通孔に通された、前記第1の金属板を押えるねじ頭部を有するねじおよび該ねじが通され前記第2の金属板を押えるリングで前記第1の金属板および前記第2の金属板を押えて前記実装基板に固定されることを特徴とする電子装置。 A screw having a screw head for holding the first metal plate, wherein the electronic component is mounted on the first surface side of the wiring board according to claim 3 and passed through a through hole of the insulating substrate. And an electronic device, wherein the first metal plate and the second metal plate are pressed and fixed to the mounting substrate by a ring through which the screw is passed to press the second metal plate.
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