JP2007266224A - Power module - Google Patents

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JP2007266224A
JP2007266224A JP2006088039A JP2006088039A JP2007266224A JP 2007266224 A JP2007266224 A JP 2007266224A JP 2006088039 A JP2006088039 A JP 2006088039A JP 2006088039 A JP2006088039 A JP 2006088039A JP 2007266224 A JP2007266224 A JP 2007266224A
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circuit board
power module
cooling jacket
metal
electronic component
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Koji Hayakawa
浩二 早川
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To improve heat dissipation of a power module on which an electronic component is loaded. <P>SOLUTION: The power module is provided with a circuit board 2 on which the electronic component 1 is placed on a center of an upper face and a water cooled jacket 3 having a passage which is brought into contact with a lower face of the circuit board 2 and makes cooling water flow just below a contact part. A center of the lower face of the circuit board 2 projects to a lower side compared to an outer peripheral part of the lower face, A part which is brought into contact with the circuit board 2 in the water cooled jacket 3 is depressed to a passage-side along the lower face of the circuit board 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、水冷ジャケットに固定することで放熱性を高めたパワーモジュールに関する。   The present invention relates to a power module having improved heat dissipation by being fixed to a water cooling jacket.

近年、自動車等に用いられるパワー制御用デバイス等の電子部品は、自動車の駆動方式のハイブリッド化による高電圧化が進み、そのため電子部品を搭載するパワーモジュールには高放熱性を求められるようになってきている。   In recent years, electronic components such as power control devices used in automobiles and the like have become higher in voltage due to the hybridization of the driving system of automobiles, and thus power modules equipped with electronic components are required to have high heat dissipation. It is coming.

従来のパワーモジュールは、一般に電子部品を載置した回路基板を銅等の放熱板を介して水冷ジャケットに固定している。   In a conventional power module, a circuit board on which electronic components are mounted is generally fixed to a water cooling jacket via a heat sink such as copper.

従来のパワーモジュールを図2に示す。図2に示すように、21は電子部品、22は回路基板、22aは回路基板22の上面側の部位である電気回路基板、22bは回路基板22の下面側の部位である絶縁基板、23は回路基板22を冷却するための水冷ジャケットである。電気回路基板22aは例えばセラミック基板の両面に銅、またはアルミニウムを活性ロウ材等を用いて接合し、エッチング等にて回路形成したものである。水冷ジャケット23は通常放熱性を考慮してアルミニウムにて水路を形成したものである。絶縁基板22bは電気回路基板22aと水冷ジャケット23の絶縁を保つため、樹脂またはセラミックス材料を用いる。なお、電子部品21より発生した熱を電気回路基板22aを通して水冷ジャケット23に放熱するため高放熱性の特性を有するセラミックス材料がより好ましい。
特開2002−26469号公報
A conventional power module is shown in FIG. As shown in FIG. 2, 21 is an electronic component, 22 is a circuit board, 22a is an electric circuit board that is a part on the upper surface side of the circuit board 22, 22b is an insulating board that is a part on the lower surface side of the circuit board 22, and 23 is This is a water cooling jacket for cooling the circuit board 22. For example, the electric circuit board 22a is formed by bonding copper or aluminum to both surfaces of a ceramic substrate using an active brazing material or the like, and forming a circuit by etching or the like. The water-cooling jacket 23 is usually formed with a water channel in consideration of heat dissipation. The insulating substrate 22b is made of a resin or a ceramic material in order to maintain insulation between the electric circuit substrate 22a and the water cooling jacket 23. In addition, since the heat generated from the electronic component 21 is radiated to the water cooling jacket 23 through the electric circuit board 22a, a ceramic material having a high heat dissipation characteristic is more preferable.
JP 2002-26469 A

従来、回路基板、水冷ジャケットの各接触面は平面度を上げることによって接触面積を大きくして放熱性を確保していたが、近年さらに高い放熱性が要求されるようになった。従って、本発明のパワーモジュールは上記問題を鑑みて完成されたものであり、その目的はパワーモジュールの放熱性を向上させることである。   Conventionally, the contact surfaces of the circuit board and the water cooling jacket have been increased in flatness to increase the contact area to ensure heat dissipation. However, in recent years, higher heat dissipation has been required. Therefore, the power module of the present invention has been completed in view of the above problems, and its purpose is to improve the heat dissipation of the power module.

本発明のパワーモジュールは、上面の中央部に電子部品を載置した回路基板と、該回路基板の下面に接触されるとともに該接触部の直下に冷却水を流すための流路を有する水冷ジャケットとを具備するパワーモジュールにおいて、前記回路基板の下面中央部が下面外周部よりも下側に突出しており、前記水冷ジャケットの前記回路基板に接触する部位が前記回路基板の下面に沿って前記流路側に窪んでいることを特徴とする。   A power module according to the present invention includes a circuit board on which an electronic component is placed at the center of the upper surface, and a water cooling jacket having a flow path for contacting the lower surface of the circuit board and allowing cooling water to flow directly under the contact part And a portion of the water-cooling jacket that is in contact with the circuit board extends along the lower surface of the circuit board. It is characterized by a depression on the roadside.

本発明のパワーモジュールは、前記回路基板の下面側の部位が絶縁基板から成ることを特徴とする。   The power module of the present invention is characterized in that the lower surface side portion of the circuit board is made of an insulating substrate.

本発明のパワーモジュールは、前記絶縁基板が窒化珪素質焼結体から成ることを特徴とする。   The power module of the present invention is characterized in that the insulating substrate is made of a silicon nitride sintered body.

本発明のパワーモジュールは、前記回路基板は下面外周部から下面中央部にかけて、なだらかな凸状の曲面になっていることを特徴とする。   The power module according to the present invention is characterized in that the circuit board has a gently convex curved surface from the outer periphery of the lower surface to the center of the lower surface.

本発明のパワーモジュール、前記回路基板の上面が平坦であることを特徴とする。   The power module of the present invention is characterized in that the upper surface of the circuit board is flat.

本発明のパワーモジュールは、上面の中央部に電子部品を載置した回路基板と、回路基板の下面に接触されるとともに接触部の直下に冷却水を流すための流路を有する水冷ジャケットとを具備するパワーモジュールにおいて、回路基板の下面中央部が下面外周部よりも下側に突出しており、水冷ジャケットの回路基板に接触する部位を回路基板の下面に沿って流路側に窪ませることにより、回路基板中央部の流路が狭くなることで、その部分を流れる冷却水の流速が早くなることから、放熱性を向上させることができる。   A power module according to the present invention includes a circuit board on which an electronic component is placed at the center of the upper surface, and a water cooling jacket that is in contact with the lower surface of the circuit board and has a flow path for flowing cooling water immediately below the contact portion. In the power module provided, the lower surface central portion of the circuit board protrudes below the outer periphery of the lower surface, and the portion that contacts the circuit board of the water cooling jacket is recessed toward the flow path side along the lower surface of the circuit board, Since the flow path in the central portion of the circuit board is narrowed, the flow rate of the cooling water flowing through that portion is increased, so that heat dissipation can be improved.

本発明のパワーモジュールは、回路基板の下面側の部位が絶縁基板から成ることにより、回路基板の上面側の電気回路部位を平板構造に維持しながら、絶縁基板の形状のみを中央部が突出した構造とすることができる。よって電気回路部位に歪が生じ難くなり、回路基板と水冷ジャケットを密着させる際に電気回路部位に加わる応力が小さくなることで電気回路部位の信頼性を向上させることができる。   In the power module of the present invention, the lower portion of the circuit board is made of an insulating substrate, so that the central portion projects only the shape of the insulating substrate while maintaining the electric circuit portion on the upper surface of the circuit board in a flat plate structure. It can be a structure. Therefore, it becomes difficult for distortion to occur in the electric circuit portion, and the reliability applied to the electric circuit portion can be improved by reducing the stress applied to the electric circuit portion when the circuit board and the water cooling jacket are brought into close contact with each other.

本発明のパワーモジュールは、絶縁基板として窒化珪素質焼結体から成るものを使用することにより、樹脂等に比べて高放熱性、且つ高強度の特性を有することから、絶縁基板を介して回路基板と水冷ジャケットを密着させる場合に水冷ジャケットが絶縁基板下面によって窪むほど圧力をかけても絶縁基板に割れが発生しないのでより安定した放熱性とすることができる。   Since the power module according to the present invention uses a silicon nitride sintered body as an insulating substrate, it has higher heat dissipation and higher strength characteristics than a resin or the like. When the substrate and the water cooling jacket are brought into close contact with each other, even if pressure is applied to the extent that the water cooling jacket is depressed by the lower surface of the insulating substrate, cracking does not occur in the insulating substrate, so that more stable heat dissipation can be achieved.

本発明のパワーモジュールは、回路基板は下面外周部から下面中央部にかけて、なだらかな凸状の曲面になっていることによって、水冷ジャケットが窪む際に追随しやすく密着性も向上すると共に流路の変形もなだらかとなるため冷却水の流速抵抗が小さくなるので冷却水が流れ易くなることで放熱性をより向上させることができる。   In the power module of the present invention, the circuit board has a gentle convex curved surface from the outer periphery of the lower surface to the center of the lower surface, so that it is easy to follow when the water-cooling jacket is depressed, and the adhesion is improved and the flow path is improved. Since the deformation of the flow rate becomes gentle, the flow velocity resistance of the cooling water becomes small, and the heat dissipation can be further improved by facilitating the flow of the cooling water.

本発明のパワーモジュールは、回路基板の上面が平坦であることによって、電子部品からの発熱をより効果的に回路基板に伝えることが可能となる。   In the power module of the present invention, since the upper surface of the circuit board is flat, heat generated from the electronic component can be more effectively transmitted to the circuit board.

次に本発明のパワーモジュールを添付の図面に基づいて詳細に説明する。   Next, the power module of the present invention will be described in detail with reference to the accompanying drawings.

図1は、本発明のパワーモジュールの実施の形態の一例の断面図である。図1に示すように、1は電子部品、2は回路基板、2aは回路基板2の上面側の部位である電気回路基板、2bは回路基板2の下面側の部位である絶縁基板、3は回路基板2を冷却するための水冷ジャケットである。   FIG. 1 is a cross-sectional view of an example of an embodiment of a power module of the present invention. As shown in FIG. 1, 1 is an electronic component, 2 is a circuit board, 2a is an electric circuit board which is a part on the upper surface side of the circuit board 2, 2b is an insulating board which is a part on the lower surface side of the circuit board 2, It is a water cooling jacket for cooling the circuit board 2.

電子部品1は、MOS(Metal Oxide Semiconductor)、またはIGBT(Insulated Gate Bipolar Transistor)等の素子である。   The electronic component 1 is an element such as a MOS (Metal Oxide Semiconductor) or an IGBT (Insulated Gate Bipolar Transistor).

回路基板2の上面側の電気回路基板2aは例えば四角形状のセラミック基板10の上下面に活性金属ロウ材を介して金属回路板11,12がロウ付けされている。セラミック基板10は金属回路板11,12を支持する支持部材として作用し、例えば、窒化珪素質焼結体で形成されている。   In the electric circuit board 2a on the upper surface side of the circuit board 2, for example, metal circuit boards 11 and 12 are brazed to the upper and lower surfaces of the rectangular ceramic substrate 10 via an active metal brazing material. The ceramic substrate 10 acts as a support member for supporting the metal circuit boards 11 and 12, and is formed of, for example, a silicon nitride sintered body.

窒化珪素焼結体は窒化珪素、酸化アルミニウム、酸化マグネシウム、酸化イットリウム等の原料粉末に適当な有機バインダー、可塑剤、溶剤を添加混合して泥漿状となすとともに該泥漿物を従来周知のドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施し、所定形状となすとともに必要に応じて複数枚を積層して成形体となし、しかる後、これを窒素雰囲気等の非酸化性雰囲気中、1600乃至2000℃の高温で焼成することによって製作される。   A silicon nitride sintered body is made by mixing an appropriate organic binder, a plasticizer, and a solvent with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, yttrium oxide, etc., to form a slurry, and the slurry is conventionally known as a doctor blade. The ceramic green sheet (ceramic green sheet) is formed by adopting the method and calender roll method, and then the ceramic green sheet is punched appropriately to obtain a predetermined shape, and multiple sheets are laminated as necessary. Then, it is manufactured by firing at a high temperature of 1600 to 2000 ° C. in a non-oxidizing atmosphere such as a nitrogen atmosphere.

この窒化珪素質焼結体から成るセラミック基板10はその熱伝達率が60W/m・K以上と非常に大きいことから、金属回路板11に載置固定された電子部品1が作動時に熱を発生したとしてもその熱はセラミック基板10を介して外部に効率よく放散され、その結果、熱によって電子部品1が高温となることはなく常に適温として電子部品1を安定して信頼性よく作動させることができる。   Since the ceramic substrate 10 made of this silicon nitride sintered body has a very high heat transfer coefficient of 60 W / m · K or more, the electronic component 1 mounted and fixed on the metal circuit board 11 generates heat during operation. Even so, the heat is efficiently dissipated to the outside through the ceramic substrate 10. As a result, the electronic component 1 is not heated to a high temperature by the heat, and the electronic component 1 is always operated at a suitable temperature in a stable and reliable manner. Can do.

そしてセラミック基板10はその上下面に活性金属ロウ材を介して金属回路板11,12が取着されており、その活性金属ロウ材はセラミック基板10と金属回路板11,12とを接合する接合材として作用し、例えば、銀ロウ材(銀:72重量%、銅:28重量%)やアルミニウムロウ材(アルミニウム:88重量%、シリコン:12重量%)等から成るロウ材にチタン、タングステン、ハフニウム及び/またはその水素化物の少なくとも1種を2乃至5重量%添加したもので形成されている。   The ceramic circuit board 10 has metal circuit boards 11 and 12 attached to the upper and lower surfaces of the ceramic circuit board 10 through active metal brazing material. The active metal brazing material is used to join the ceramic circuit board 10 and the metal circuit boards 11 and 12 together. For example, titanium, tungsten, brazing material made of silver brazing material (silver: 72% by weight, copper: 28% by weight), aluminum brazing material (aluminum: 88% by weight, silicon: 12% by weight), etc. It is formed by adding 2 to 5% by weight of at least one of hafnium and / or its hydride.

活性金属ロウ材によるセラミック基板10への金属回路板11,12の取着は、セラミック基板10上に金属回路板11,12を間に活性金属ロウ材を挟んで載置させ、しかる後、これを真空中もしくは還元雰囲気中、所定温度(銀ロウ材の場合は約900℃、アルミニウムロウ材の場合は約600℃)で加熱処理し、活性金属ロウ材を溶融せしめるとともにセラミック基板10と金属回路板11,12とを接合させることによって行われる。   The attachment of the metal circuit boards 11 and 12 to the ceramic substrate 10 by the active metal brazing material is performed by placing the metal circuit boards 11 and 12 on the ceramic substrate 10 with the active metal brazing material sandwiched therebetween, and thereafter Is heated in vacuum or in a reducing atmosphere at a predetermined temperature (about 900 ° C. for silver brazing material, about 600 ° C. for aluminum brazing material) to melt the active metal brazing material and the ceramic substrate 10 and the metal circuit. This is done by joining the plates 11 and 12 together.

またセラミック基板10上に活性金属ロウ材を介して取着される金属回路板11,12は銅やアルミニウム等の金属材料から成り、銅やアルミニウム等のインゴット(塊)に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことによって、例えば、厚さが500μmで、所定パターン形状に製作される。   Further, the metal circuit boards 11 and 12 attached to the ceramic substrate 10 through the active metal brazing material are made of a metal material such as copper or aluminum, and are rolled or punched into ingots (lumps) such as copper or aluminum. By applying a conventionally known metal processing method such as a method, for example, a thickness of 500 μm is produced in a predetermined pattern shape.

なお、この金属回路板11,12は銅から成る場合、金属回路板を無酸素銅で形成しておくと、無酸素銅はロウ付けの際に銅の表面が銅中に存在する酸素により酸化されることなく活性金属ロウ材との濡れ性が良好となり、セラミック基板10への活性金属ロウ材を介しての接合が強固となる。従って、金属回路板はこれを無酸素銅で形成しておくことが好ましい。   When the metal circuit boards 11 and 12 are made of copper, if the metal circuit board is made of oxygen-free copper, the oxygen-free copper is oxidized by the oxygen present in the copper during brazing. As a result, the wettability with the active metal brazing material is improved, and the bonding to the ceramic substrate 10 through the active metal brazing material is strengthened. Therefore, the metal circuit board is preferably formed of oxygen-free copper.

このような金属回路板11,12は、まず、セラミック基板10の上下面に金属回路板11,12となる銅板やアルミニウム板などの金属板を活性金属ロウ材を介して接合し、しかる後、この金属板の表面にエッチングレジストを所定の回路形状に印刷する。そして、エッチング装置によって例えば塩化第二鉄や塩化第二銅等のエッチング液を用いて、上下よりスプレーにてエッチング液を金属板の表面に吹き付け不要な金属部を溶解して回路を形成し、エッチング終了後は、水酸化ナトリウム等のアルカリ溶液を用いて金属回路部に塗布されているエッチングレジストを除去する方法によって回路状の金属回路板11,12を形成する。   Such metal circuit boards 11 and 12 are first joined to the upper and lower surfaces of the ceramic substrate 10 with a metal plate such as a copper plate or an aluminum plate to be the metal circuit boards 11 and 12 through an active metal brazing material. An etching resist is printed on the surface of the metal plate in a predetermined circuit shape. And, using an etching solution such as ferric chloride or cupric chloride by an etching apparatus, spraying the etching solution on the surface of the metal plate from above and below to dissolve unnecessary metal parts to form a circuit, After completion of the etching, circuit-like metal circuit boards 11 and 12 are formed by a method of removing an etching resist applied to the metal circuit portion using an alkali solution such as sodium hydroxide.

また金属回路板はその表面にニッケルから成る良導電性で、かつ耐蝕性及び活性金属ロウ材との濡れ性が良好な金属をメッキ法により被着させておくと、金属回路板11,12の耐食性を向上できるとともに金属回路板11,12に電子部品や放熱板等を半田を介して強固に接着させることができる。従って、金属回路板11,12はその表面にニッケルから成る良導電性で、かつ耐蝕性及び活性金属ロウ材との濡れ性が良好な金属をメッキ法により被着させておくことが好ましい。   Further, when a metal circuit board having a good conductivity made of nickel and having good corrosion resistance and wettability with an active metal brazing material is deposited by plating, the metal circuit boards 11 and 12 are formed. Corrosion resistance can be improved, and electronic components, heat sinks, and the like can be firmly bonded to the metal circuit boards 11 and 12 via solder. Therefore, it is preferable that the metal circuit boards 11 and 12 have a metal surface having good conductivity made of nickel and having good corrosion resistance and wettability with the active metal brazing material deposited by plating.

更に金属回路板11,12の表面にニッケルから成るメッキ層を被着させる場合、内部に燐を8〜15重量%含有させてニッケル−燐のアモルファス合金としておくとニッケルから成るメッキ層の表面酸化を良好に防止して活性金属ロウ材との濡れ性等を長く維持することができる。従って、金属回路板11,12の表面にニッケルから成るメッキ層を被着させる場合、内部に燐を8〜15重量%含有させてニッケル−燐のアモルファス合金としておくことが好ましい。   Further, when a plating layer made of nickel is deposited on the surfaces of the metal circuit boards 11 and 12, the surface oxidation of the plating layer made of nickel can be achieved by containing 8 to 15% by weight of phosphorus inside and forming an amorphous alloy of nickel-phosphorus. Can be prevented well and wettability with the active metal brazing material can be maintained for a long time. Therefore, when a plating layer made of nickel is deposited on the surfaces of the metal circuit boards 11 and 12, it is preferable to contain 8 to 15% by weight of phosphorus inside to form a nickel-phosphorus amorphous alloy.

金属回路板11,12の表面にニッケル−燐のアモルファス合金からなるメッキ層を被着させる場合、ニッケルに対する燐の含有量が8重量%未満、あるいは15重量%を超えたときニッケル−燐のアモルファス合金を形成するのが困難となってメッキ層に半田を強固に接着させることが困難になりやすい。   When a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surfaces of the metal circuit boards 11 and 12, the nickel-phosphorus amorphous when the phosphorus content relative to nickel is less than 8% by weight or more than 15% by weight. It is difficult to form an alloy, and it is difficult to firmly bond the solder to the plating layer.

また、金属回路板11,12の表面にニッケル−燐のアモルファス合金からなるメッキ層を被着させる場合金属回路板11,12の表面に被着されるニッケルから成るメッキ層は、またその厚みが1.5μm未満の場合、金属回路板11,12の表面全体をニッケルから成るメッキ層で被覆するのが困難となり、金属回路板11,12の酸化腐蝕を有効に防止し難くなる。また3μmを超えるとニッケルから成るメッキ層の内部に内在する内在応力が大きくなってセラミック基板1に反りや割れ等が発生し易くなる。特にセラミック基板1の厚さが700μm以下の薄いものになった場合にはこのセラミック基板1の反りや割れ等が顕著となりやすい。従って、金属回路板11,12の表面に被着されるニッケルから成るメッキ層はその厚みを1.5μm〜3μmの範囲としておくことが好ましい。   In the case where a plating layer made of an amorphous alloy of nickel-phosphorous is applied to the surfaces of the metal circuit boards 11 and 12, the plating layer made of nickel applied to the surfaces of the metal circuit boards 11 and 12 also has a thickness. When the thickness is less than 1.5 μm, it becomes difficult to cover the entire surface of the metal circuit boards 11 and 12 with a plating layer made of nickel, and it becomes difficult to effectively prevent the oxidative corrosion of the metal circuit boards 11 and 12. On the other hand, if the thickness exceeds 3 μm, the internal stress inside the plating layer made of nickel becomes large, and the ceramic substrate 1 is likely to be warped or cracked. In particular, when the thickness of the ceramic substrate 1 is as thin as 700 μm or less, warpage, cracking, and the like of the ceramic substrate 1 are likely to be remarkable. Therefore, it is preferable that the plating layer made of nickel deposited on the surfaces of the metal circuit boards 11 and 12 has a thickness in the range of 1.5 μm to 3 μm.

セラミック基板10の下面には金属回路板12を介して絶縁基板2bが接合されるのがよい。これにより、回路基板2の上面側の電気回路基板2aを平板構造に維持しながら、絶縁基板2bの形状のみを下面中央部が突出した構造とすることができる。よって電気回路基板2aに歪が生じ難くなり、回路基板2と水冷ジャケット3を密着させる際に電気回路基板2aに加わる応力が小さくなることで電気回路基板2aの信頼性を向上させることができる。   The insulating substrate 2b is preferably bonded to the lower surface of the ceramic substrate 10 via the metal circuit board 12. As a result, while the electric circuit board 2a on the upper surface side of the circuit board 2 is maintained in a flat plate structure, only the shape of the insulating substrate 2b can have a structure in which the center portion of the lower surface protrudes. Therefore, the electric circuit board 2a is less likely to be distorted, and the stress applied to the electric circuit board 2a when the circuit board 2 and the water cooling jacket 3 are brought into close contact with each other is reduced, so that the reliability of the electric circuit board 2a can be improved.

なお、図1において、金属回路層12は絶縁基板2bの下面全面に接合される板状体である。このような構成により、金属回路層12と絶縁基板2bとの接合強度を高めることができるとともに電子部品1から回路基板2に移動した熱を水冷ジャケット3に効率よく放熱させることができる。   In FIG. 1, the metal circuit layer 12 is a plate-like body bonded to the entire lower surface of the insulating substrate 2b. With such a configuration, the bonding strength between the metal circuit layer 12 and the insulating substrate 2b can be increased, and the heat transferred from the electronic component 1 to the circuit substrate 2 can be efficiently radiated to the water cooling jacket 3.

絶縁基板2bは例えば四角形状のセラミック板を使用する。このセラミック基板は例えば、窒化珪素質焼結体で形成されている。窒化珪素焼結体の作製方法は、電気回路基板2aのセラミック基板10の作製方法と同様にして製作する。   For example, a rectangular ceramic plate is used as the insulating substrate 2b. This ceramic substrate is formed of, for example, a silicon nitride-based sintered body. The silicon nitride sintered body is manufactured in the same manner as the ceramic substrate 10 of the electric circuit board 2a.

また、図1では絶縁基板2bの下面中央部が下面外周部よりも下側に突出するように中央部が周辺部に比べて厚くなっている。このように絶縁基板2bの中央部が周辺部と比べて厚くなるように作製する方法としては、ラップ、グラインド等による研磨、セラミックグリーンシートの段階でプレス等によって中央部が厚くなるように形状を形成する方法、およびセラミックグリーンシートの段階、または焼成後のセラミック基板の状態で大きさの異なる複数枚のセラミックグリーンシート、またはセラミック基板を重ね合わせて階段状に形成する等の方法がある。   Further, in FIG. 1, the central portion is thicker than the peripheral portion so that the central portion of the lower surface of the insulating substrate 2b protrudes below the outer peripheral portion of the lower surface. As described above, as a method of manufacturing the central portion of the insulating substrate 2b so as to be thicker than the peripheral portion, polishing is performed by lapping, grinding, etc., and the central portion is thickened by pressing at the stage of the ceramic green sheet. There are a method of forming, and a method of forming a plurality of ceramic green sheets having different sizes in a stage of a ceramic green sheet or a state of a ceramic substrate after firing, or forming a stepped shape by superposing ceramic substrates.

そして、電気回路基板2aの下に絶縁基板2bを重ねることで下面中央部が下面外周部よりも下側に突出した回路基板2となる。なお、電気回路基板12および絶縁基板2bは互いに接触しているだけでもよく、電気回路基板12と絶縁基板2bとを活性金属ロウ材等で接合してもよい。   And the circuit board 2 which the lower surface center part protruded below the lower surface outer peripheral part by overlapping the insulating substrate 2b under the electric circuit board 2a. The electric circuit board 12 and the insulating board 2b may be in contact with each other, or the electric circuit board 12 and the insulating board 2b may be joined with an active metal brazing material or the like.

水冷ジャケット3は、アルミニウム等熱伝導率に優れた金属にて作られており、内部を冷媒が流れるように空洞となっているものである。例えば、アルミニウムのブロック内部を大きくくり貫き筒状とした穴を設けたもの、または複数本の貫通穴を開けたものについて、開放されている両端の穴に例えば冷媒を流すことができるホースを取り付けるためのポートを取り付けたものである。   The water cooling jacket 3 is made of a metal having excellent thermal conductivity, such as aluminum, and is hollow so that the refrigerant flows inside. For example, a hose capable of allowing a coolant to flow, for example, is attached to the open holes at both ends of an aluminum block that has a hollowed-out cylindrical hole or a plurality of through-holes. It has a port for it.

本発明のパワーモジュールは、以上の各部品の組合せで構成されており、その接続方法は以下の通りである。電気回路基板2aの金属回路板11の所定の場所に半田ペーストを印刷、または半田箔を乗せ、そこに電子部品1を乗せた状態で230℃から350℃程度の還元雰囲気中で半田接合を行い、必要に応じてボンディングワイヤー等で電子部品1の端子と金属回路板11とを電気的に接合する。   The power module of the present invention is composed of a combination of the above components, and the connection method is as follows. Solder bonding is performed in a reducing atmosphere of about 230 ° C. to 350 ° C. with a solder paste printed or solder foil placed on a predetermined place on the metal circuit board 11 of the electric circuit board 2a and the electronic component 1 placed thereon. If necessary, the terminal of the electronic component 1 and the metal circuit board 11 are electrically joined with a bonding wire or the like.

次に、電気回路基板2aの電子部品1を実装していない面を絶縁基板2bを介して水冷ジャケット3に載置する。この際、絶縁基板2bは中央部の凸の面が水冷ジャケット3側になるようにし、さらに電気回路基板2aと絶縁基板2bと水冷ジャケット3のそれぞれの間には、載置時に電気回路基板2a、絶縁基板2b、水冷ジャケット3それぞれの表面のうねりにより空気の層ができ、放熱性を阻害することを防止するため、シリコングリス等が厚み100μm程度塗布されるのがよい。   Next, the surface of the electric circuit board 2a on which the electronic component 1 is not mounted is placed on the water cooling jacket 3 via the insulating board 2b. At this time, the insulating substrate 2b has a central convex surface on the side of the water cooling jacket 3, and the electric circuit substrate 2a is placed between the electric circuit substrate 2a, the insulating substrate 2b, and the water cooling jacket 3 when mounted. In order to prevent an air layer from being formed by the undulations on the surfaces of the insulating substrate 2b and the water cooling jacket 3, and to prevent the heat dissipation from being disturbed, silicon grease or the like is preferably applied to a thickness of about 100 μm.

電子部品1を実装した電気回路基板2aを絶縁基板2bを介して水冷ジャケット3に接合する際、回路基板2と水冷ジャケット3の間で荷重を加え、回路基板2の中央部の凸の部分にて水冷ジャケット3を変形させることで、回路基板2の中央部にあたる部分の水冷ジャケット3の流路が狭くなるためその部分の流速が早くなり、放熱性を向上させることができるパワーモジュールとすることができる。   When the electric circuit board 2a on which the electronic component 1 is mounted is joined to the water cooling jacket 3 via the insulating board 2b, a load is applied between the circuit board 2 and the water cooling jacket 3, and the convex portion at the center of the circuit board 2 is applied. By deforming the water cooling jacket 3, the flow path of the water cooling jacket 3 in the central portion of the circuit board 2 is narrowed, so that the flow velocity of that portion is increased and the power module can improve heat dissipation. Can do.

そして、回路基板2の下面中央部を下面外周部よりも下側に突出させる手段として、段差によって突出した形状にすることも可能であるが、このような段差により突出させるよりも、回路基板下面外周部から下面中央部にかけてなだらかな凸状の曲面となるようにする方がよい。これにより、水冷ジャケットが窪む際に追随しやすく密着性も向上すると共に流路の変形もなだらかとなるため冷却水の流速抵抗が小さくなるので冷却水が流れ易くなることで放熱性をより向上させることができる。   And as a means for projecting the lower surface center part of the circuit board 2 below the lower surface outer peripheral part, it is possible to have a shape projecting by a step, but rather than projecting by such a step, the circuit board lower surface It is better to have a gentle convex curved surface from the outer peripheral part to the lower surface center part. This makes it easier to follow when the water-cooling jacket is recessed and improves adhesion, and the flow path is also gently deformed, so the flow rate resistance of the cooling water is reduced and the cooling water is easier to flow, improving heat dissipation. Can be made.

なお、回路基板2の下面中央部が下面外周部よりも下側に突出している形状については、絶縁基板2bの中央部が周辺部と比べてなだらかに厚くなるように作製する方法だけに限定されない。例えば、絶縁基板2bを用いずに電気回路基板2aの下面中央部が下側に突出するようにして、この電気回路基板2aを水冷ジャケット3に接触させてもよい。この場合、電気回路基板2aの下面に接合された金属回路板12の下面中央部が下側に突出するようにしてこの金属回路板12を水冷ジャケット3に接触させるか、あるいは、電気回路基板2aのセラミック板10の下面中央部が下側に突出するようにしてこのセラミック板10を直接水冷ジャケット3に接触させればよい。   In addition, the shape in which the center part of the lower surface of the circuit board 2 protrudes below the outer peripheral part of the lower surface is not limited to the method of manufacturing the central part of the insulating substrate 2b so as to be gently thicker than the peripheral part. . For example, the electric circuit board 2a may be brought into contact with the water cooling jacket 3 so that the lower surface center portion of the electric circuit board 2a protrudes downward without using the insulating substrate 2b. In this case, the metal circuit board 12 is brought into contact with the water-cooling jacket 3 so that the lower surface central portion of the metal circuit board 12 joined to the lower surface of the electric circuit board 2a protrudes downward, or the electric circuit board 2a. The ceramic plate 10 may be brought into direct contact with the water-cooling jacket 3 so that the center portion of the lower surface of the ceramic plate 10 protrudes downward.

また、回路基板2の電子部品1と接する側の面については、電子部品1から発する熱を回路基板2を介して効率よく水冷ジャケット3に伝熱するため、回路基板2の電子部品1と接する側の面は平面であることが良い。   Further, the surface of the circuit board 2 that is in contact with the electronic component 1 is in contact with the electronic component 1 of the circuit board 2 in order to efficiently transfer the heat generated from the electronic component 1 to the water cooling jacket 3 through the circuit board 2. The side surface is preferably a flat surface.

なお、本発明は上述の最良の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行うことは何等差し支えない。例えば、電気回路基板2aを構成するセラミック基板10は樹脂基板でもよい。   Note that the present invention is not limited to the above-described best mode, and various modifications can be made without departing from the scope of the present invention. For example, the ceramic substrate 10 constituting the electric circuit substrate 2a may be a resin substrate.

本発明のパワーモジュールの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the power module of this invention. 従来のパワーモジュールを示す断面図である。It is sectional drawing which shows the conventional power module.

符号の説明Explanation of symbols

1:電子部品
2:回路基板
2a:電気回路基板
2b:絶縁基板
3:水冷ジャケット
1: Electronic component 2: Circuit board 2a: Electric circuit board 2b: Insulating board 3: Water-cooled jacket

Claims (5)

上面の中央部に電子部品を載置した回路基板と、該回路基板の下面に接触されるとともに該接触部の直下に冷却水を流すための流路を有する水冷ジャケットとを具備するパワーモジュールにおいて、前記回路基板の下面中央部が下面外周部よりも下側に突出しており、前記水冷ジャケットの前記回路基板に接触する部位が前記回路基板の下面に沿って前記流路側に窪んでいることを特徴とするパワーモジュール。 In a power module comprising: a circuit board having an electronic component placed on the center of the upper surface; and a water cooling jacket that is in contact with the lower surface of the circuit board and has a flow path for flowing cooling water directly under the contact portion The center portion of the lower surface of the circuit board protrudes below the outer peripheral portion of the lower surface, and the portion of the water cooling jacket that contacts the circuit board is recessed toward the flow path along the lower surface of the circuit board. A featured power module. 前記回路基板の下面側の部位が絶縁基板から成ることを特徴とする請求項1記載のパワーモジュール。 The power module according to claim 1, wherein the lower surface side portion of the circuit board is made of an insulating substrate. 前記絶縁基板が窒化珪素質焼結体から成ることを特徴とする請求項2記載のパワーモジュール。 The power module according to claim 2, wherein the insulating substrate is made of a silicon nitride sintered body. 前記回路基板は下面外周部から下面中央部にかけて、なだらかな凸状の曲面になっていることを特徴とする請求項1乃至請求項3のいずれかに記載のパワーモジュール。 The power module according to any one of claims 1 to 3, wherein the circuit board has a gently convex curved surface from a lower surface outer peripheral portion to a lower surface central portion. 前記回路基板の上面が平坦であることを特徴とする請求項1乃至請求項4のいずれかに記載のパワーモジュール。 The power module according to claim 1, wherein an upper surface of the circuit board is flat.
JP2006088039A 2006-03-28 2006-03-28 Power module Pending JP2007266224A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288495A (en) * 2007-05-21 2008-11-27 Toyota Motor Corp Power module cooler and power module
JP2011108999A (en) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp Substrate for power module, substrate for power module with heat sink, power module, and method of manufacturing substrate for power module
CN105472945A (en) * 2015-12-04 2016-04-06 新安乃达驱动技术(上海)有限公司 Electric motor controller, electric motor and electric vehicle
WO2023188501A1 (en) * 2022-03-31 2023-10-05 三菱重工業株式会社 Cooling device
US11984383B2 (en) 2019-05-30 2024-05-14 Mitsubishi Electric Corporation Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288495A (en) * 2007-05-21 2008-11-27 Toyota Motor Corp Power module cooler and power module
JP4697475B2 (en) * 2007-05-21 2011-06-08 トヨタ自動車株式会社 Power module cooler and power module
JP2011108999A (en) * 2009-11-20 2011-06-02 Mitsubishi Materials Corp Substrate for power module, substrate for power module with heat sink, power module, and method of manufacturing substrate for power module
CN105472945A (en) * 2015-12-04 2016-04-06 新安乃达驱动技术(上海)有限公司 Electric motor controller, electric motor and electric vehicle
US11984383B2 (en) 2019-05-30 2024-05-14 Mitsubishi Electric Corporation Semiconductor device
WO2023188501A1 (en) * 2022-03-31 2023-10-05 三菱重工業株式会社 Cooling device

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