JP2008205184A - 実装構造、その実装構造の製造方法、半導体装置、その半導体装置の製造方法 - Google Patents
実装構造、その実装構造の製造方法、半導体装置、その半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】半導体素子4の接続端子4Aに接続部材10を介して回路基板3と電気的に接続する実装構造であって、接続部材10は、柱状部2Aを有する導電性突起2を有し、半導体素子4の表面に水平な面で切った柱状部2Aの断面の断面積は、半導体素子4の接続端子4Aの表面積より小さい。回路基板3と半導体素子4とは、接続部材10の導電性部材2によって電気的に接合されている。
【選択図】図2
Description
(付記1)
半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造であって、
前記接続部材は、
柱状部を有する導電性突起を有し、
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記半導体素子の接続端子の表面積より小さいことを特徴とする実装構造。
(付記2)
前記導電性突起は、更に、テーパー部、電極部を有し、
前記テーパー部は、前記柱状部に接する端部から前記電極部に接続する端部に向けて小さくなる前記半導体素子の表面に水平な面で切った断面の断面積を有することを特徴とする付記1に記載の実装構造。
(付記3)
前記導電性突起と前記半導体素子は半田により接続されていることを特徴とする付記1又は付記2に記載の実装構造。
(付記4)
前記導電性突起は、絶縁性シートに担持されていることを特徴とする付記1乃至付記3のいずれかに記載の実装構造。
(付記5)
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記導電性部材の弾性率を前記半田の弾性率で除した値に反比例することを特徴とする付記1乃至付記4のいずれかに記載の実装構造。
(付記6)
前記絶縁性シートの熱膨張率は、前記半導体素子の熱膨張率と前記回路基板の熱膨張率との値の間にあることを特徴とする付記1乃至付記5のいずれかに記載の実装構造。
(付記7)
半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造の製造方法であって、
前記接続部材を形成する工程と、
前記接続部材と前記回路基板とを接続する工程と、
前記接続部材と前記半導体素子とを接続する工程と、からなり、
前記接続部材を形成する工程は、
絶縁層上に導電層を有する部材の前記絶縁層を貫通する導電性突起を形成する工程と、
前記導電層をパターニングして電極部を形成する工程と、
を有することを特徴とする実装構造の製造方法。
(付記8)
半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造を有する半導体装置であって、
前記接続部材は、
柱状部を有する導電性突起を有し、
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記半導体素子の接続端子と前記柱状部との接触面積より小さいことを特徴とする半導体装置。
(付記9)
前記導電性突起は、更に、テーパー部、電極部を有し、
前記テーパー部は、前記柱状部に接する端部から前記電極部に接続する端部に向けて小さくなる前記半導体素子の表面に水平な面で切った断面の断面積を有することを特徴とする付記8に記載の半導体装置。
(付記10)
前記導電性突起と前記半導体素子は半田により接続されていることを特徴とする付記8又は付記9に記載の半導体装置。
(付記11)
前記導電性突起は、絶縁性シートに担持されていることを特徴とする付記8乃至付記10のいずれかに記載の半導体装置。
(付記12)
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記導電性部材の弾性率を前記半田の弾性率で除した値に反比例することを特徴とする付記8乃至付記11のいずれかに記載の半導体装置。
(付記13)
前記絶縁性シートの熱膨張率は、前記半導体素子の熱膨張率と前記回路基板の熱膨張率との値の間にあることを特徴とする付記8乃至付記12のいずれかに記載の半導体装置。
(付記14)
半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造を有する半導体装置の製法方法であって、
前記接続部材を形成する工程と、
前記接続部材と前記回路基板とを接続する工程と、
前記接続部材と前記半導体素子とを接続する工程と、からなり、
前記接続部材を形成する工程は、
絶縁層上に導電層を有する部材の前記絶縁層を貫通する導電性突起を形成する工程と、
前記導電層をパターニングして電極部を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
1A テーパー孔
2 導電性突起
2A 柱状部
2B テーパー部
2C 電極部
2C´ 電極層
3 回路基板
3A 接続端子
4 半導体素子
4A 接続端子
5A 半田
5B 半田
6 めっきレジスト
6A 孔
10 接続部材
20 半導体装置
Claims (10)
- 半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造であって、
前記接続部材は、
柱状部を有する導電性突起を有し、
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記半導体素子の接続端子の表面積より小さいことを特徴とする実装構造。 - 前記導電性突起は、更に、テーパー部、電極部を有し、
前記テーパー部は、前記柱状部に接する端部から前記電極部に接続する端部に向けて小さくなる前記半導体素子の表面に水平な面で切った断面の断面積を有することを特徴とする請求項1に記載の実装構造。 - 前記導電性突起と前記半導体素子は半田により接続されていることを特徴とする請求項1又は請求項2に記載の実装構造。
- 前記導電性突起は、絶縁性シートに担持されていることを特徴とする請求項1乃至請求項3のいずれかに記載の実装構造。
- 前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記導電性部材の弾性率を前記半田の弾性率で除した値に反比例することを特徴とする請求項1乃至請求項4のいずれかに記載の実装構造。
- 前記絶縁性シートの熱膨張率は、前記半導体素子の熱膨張率と前記回路基板の熱膨張率との値の間にあることを特徴とする請求項1乃至請求項5のいずれかに記載の実装構造。
- 半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造の製造方法であって、
前記接続部材を形成する工程と、
前記接続部材と前記回路基板とを接続する工程と、
前記接続部材と前記半導体素子とを接続する工程と、からなり、
前記接続部材を形成する工程は、
絶縁層上に導電層を有する部材の前記絶縁層を貫通する導電性突起を形成する工程と、
前記導電層をパターニングして電極部を形成する工程と、
を有することを特徴とする実装構造の製造方法。 - 半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造を有する半導体装置であって、
前記接続部材は、
柱状部を有する導電性突起を有し、
前記半導体素子の表面に水平な面で切った前記柱状部の断面の断面積は、前記半導体素子の接続端子と前記柱状部との接触面積より小さいことを特徴とする半導体装置。 - 前記導電性突起は、更に、テーパー部、電極部を有し、
前記テーパー部は、前記柱状部に接する端部から前記電極部に接続する端部に向けて小さくなる前記半導体素子の表面に水平な面で切った断面の断面積を有することを特徴とする請求項8に記載の半導体装置。 - 半導体素子の接続端子に接続部材を介して回路基板と電気的に接続する実装構造を有する半導体装置の製法方法であって、
前記接続部材を形成する工程と、
前記接続部材と前記回路基板とを接続する工程と、
前記接続部材と前記半導体素子とを接続する工程と、からなり、
前記接続部材を形成する工程は、
絶縁層上に導電層を有する部材の前記絶縁層を貫通する導電性突起を形成する工程と、
前記導電層をパターニングして電極部を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
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JP2015144159A (ja) * | 2014-01-31 | 2015-08-06 | 日本航空電子工業株式会社 | 中継部材及び中継部材の製造方法 |
US9161438B2 (en) | 2010-03-31 | 2015-10-13 | Taiyo Yuden Co., Ltd. | Stress buffer layer and method for producing same |
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US20120055706A1 (en) * | 2010-09-03 | 2012-03-08 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method of manufacturing the same |
JP7266508B2 (ja) * | 2019-10-21 | 2023-04-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP2002313993A (ja) * | 2001-04-18 | 2002-10-25 | Casio Micronics Co Ltd | 半導体装置およびその製造方法並びにその接合構造 |
JP2003017529A (ja) * | 2001-04-25 | 2003-01-17 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
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US6717066B2 (en) * | 2001-11-30 | 2004-04-06 | Intel Corporation | Electronic packages having multiple-zone interconnects and methods of manufacture |
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JP2003017529A (ja) * | 2001-04-25 | 2003-01-17 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
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US9161438B2 (en) | 2010-03-31 | 2015-10-13 | Taiyo Yuden Co., Ltd. | Stress buffer layer and method for producing same |
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