JP2008192833A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2008192833A JP2008192833A JP2007025861A JP2007025861A JP2008192833A JP 2008192833 A JP2008192833 A JP 2008192833A JP 2007025861 A JP2007025861 A JP 2007025861A JP 2007025861 A JP2007025861 A JP 2007025861A JP 2008192833 A JP2008192833 A JP 2008192833A
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- Prior art keywords
- solder
- bump
- connection
- semiconductor device
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 229910000679 solder Inorganic materials 0.000 claims abstract description 194
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000007747 plating Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 55
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 238000007689 inspection Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】半導体チップ12の電極パッド31に形成されたAuバンプ13と対向する配線基板11の接続パッド21の接続面21A及び側面21Bに、めっき法により、はんだ14を形成し、次いで、このはんだ14を溶融させて、接続パッド21の接続面21Aに凸形状とされたはんだ溜り15を形成し、その後、はんだ溜りが形成された接続パッド21の接続面21AにAuバンプ13を載置して、はんだ溜り15とAuバンプ13とを接合させた。
【選択図】図8
Description
図8は、本発明の実施の形態に係る半導体装置の断面図である。
11 配線基板
12 半導体チップ
13 Auバンプ
14 はんだ
15 はんだ溜り
16 アンダーフィル樹脂
17 はんだボール
18 基板本体
18A 上面
18B 下面
19 貫通ビア
21 接続パッド
21A 接続面
21B 側面
23,29 ソルダーレジスト
23A,29A 開口部
24 配線
25 パッド
27 貫通孔
31 電極パッド
M1,M2 厚さ
Claims (4)
- 複数の電極パッドを有した半導体チップと、前記電極パッドと対向する接続パッドを有した配線基板と、を備え、
前記複数の電極パッドに設けられたAuバンプと、前記接続パッドに設けられたはんだとを接合させることにより、前記半導体チップと前記配線基板とをフリップチップ接続する半導体装置の製造方法であって、
めっき法により、前記Auバンプと対向する前記接続パッドの接続面と、前記接続パッドの側面とに前記はんだを形成するはんだ形成工程と、
前記はんだを溶融させて、前記接続パッドの接続面に凸形状とされたはんだ溜りを形成するはんだ溜り形成工程と、
前記はんだ溜りが形成された前記接続面に前記Auバンプを載置することにより、前記はんだ溜りと前記Auバンプとを接合させる接合工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記はんだ形成工程では、前記はんだを電解めっき法により形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記はんだ溜り形成工程では、前記はんだを該はんだの融点以上で、かつ前記半導体チップの耐熱温度よりも低い温度で加熱することにより、前記はんだを溶融させることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記接合工程後に、前記半導体チップと前記配線基板との隙間を充填するようにアンダーフィル樹脂を形成するアンダーフィル樹脂形成工程を設けたことを特徴とする請求項1ないし3のうち、いずれか一項記載の半導体装置の製造方法。
Priority Applications (4)
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JP2007025861A JP2008192833A (ja) | 2007-02-05 | 2007-02-05 | 半導体装置の製造方法 |
KR1020080007383A KR20080073213A (ko) | 2007-02-05 | 2008-01-24 | 반도체 장치의 제조 방법 |
US12/021,664 US7901997B2 (en) | 2007-02-05 | 2008-01-29 | Method of manufacturing semiconductor device |
TW097104164A TW200836309A (en) | 2007-02-05 | 2008-02-04 | Method of manufacturing semiconductor device |
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JP2007025861A JP2008192833A (ja) | 2007-02-05 | 2007-02-05 | 半導体装置の製造方法 |
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JP2008192833A5 JP2008192833A5 (ja) | 2010-02-25 |
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KR (1) | KR20080073213A (ja) |
TW (1) | TW200836309A (ja) |
Cited By (1)
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JP2012084681A (ja) * | 2010-10-12 | 2012-04-26 | Shinko Electric Ind Co Ltd | 電子部品装置及びその製造方法と配線基板 |
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US8143096B2 (en) * | 2008-08-19 | 2012-03-27 | Stats Chippac Ltd. | Integrated circuit package system flip chip |
TWI559826B (zh) * | 2015-12-14 | 2016-11-21 | 財團法人工業技術研究院 | 接合結構及可撓式裝置 |
Citations (3)
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JP2005217388A (ja) * | 2004-01-30 | 2005-08-11 | Phoenix Precision Technology Corp | 半導体パッケージ基板のプリ半田構造及びその製法 |
JP2006100552A (ja) * | 2004-09-29 | 2006-04-13 | Rohm Co Ltd | 配線基板および半導体装置 |
JP2007201469A (ja) * | 2006-01-23 | 2007-08-09 | Samsung Electro Mech Co Ltd | 半導体パッケージ用プリント基板及びその製造方法 |
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JP3121734B2 (ja) | 1994-11-18 | 2001-01-09 | 新日本製鐵株式会社 | 半導体装置及び半導体装置バンプ用金属ボール |
US20030001286A1 (en) * | 2000-01-28 | 2003-01-02 | Ryoichi Kajiwara | Semiconductor package and flip chip bonding method therein |
JP3829325B2 (ja) * | 2002-02-07 | 2006-10-04 | 日本電気株式会社 | 半導体素子およびその製造方法並びに半導体装置の製造方法 |
US20040084206A1 (en) * | 2002-11-06 | 2004-05-06 | I-Chung Tung | Fine pad pitch organic circuit board for flip chip joints and board to board solder joints and method |
US7880317B2 (en) * | 2005-11-22 | 2011-02-01 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
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JP2005217388A (ja) * | 2004-01-30 | 2005-08-11 | Phoenix Precision Technology Corp | 半導体パッケージ基板のプリ半田構造及びその製法 |
JP2006100552A (ja) * | 2004-09-29 | 2006-04-13 | Rohm Co Ltd | 配線基板および半導体装置 |
JP2007201469A (ja) * | 2006-01-23 | 2007-08-09 | Samsung Electro Mech Co Ltd | 半導体パッケージ用プリント基板及びその製造方法 |
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JP2012084681A (ja) * | 2010-10-12 | 2012-04-26 | Shinko Electric Ind Co Ltd | 電子部品装置及びその製造方法と配線基板 |
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US20080188040A1 (en) | 2008-08-07 |
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