JP2008192663A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP2008192663A JP2008192663A JP2007022535A JP2007022535A JP2008192663A JP 2008192663 A JP2008192663 A JP 2008192663A JP 2007022535 A JP2007022535 A JP 2007022535A JP 2007022535 A JP2007022535 A JP 2007022535A JP 2008192663 A JP2008192663 A JP 2008192663A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 51
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 107
- 239000010410 layer Substances 0.000 description 76
- 239000010408 film Substances 0.000 description 29
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 16
- 238000005530 etching Methods 0.000 description 14
- 238000005336 cracking Methods 0.000 description 13
- 230000002159 abnormal effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
Abstract
【課題】 InP基板、GaAs基板などの化合物半導体ウエハーの上に薄膜をエピタキシャル成長させたエピタキシャルウエハーを、デバイスを作製するためのプロセス工程で処理するとウエハーが30%〜40%の高率で割れる。プロセス工程でのエピウエハーの割れを防止すること。
【解決手段】 エピタキシャルウエハーの外周部を除去し、外周の面取り部にできた異常成長隆起部を取り除く。エピタキシャルウエハーの厚みをtとして、エピタキシャル層を周辺部からq=t〜5tの幅で除去し、基板の表面を露呈するようにする。
【選択図】 図7
Description
本発明はもっと大きくウエハーの割れを問題にしており、転位の伝搬防止を課題とする特許文献1とは異なる。しかし環状溝を切るということで多少似た点があるのでここに挙げて説明した。
さらに、エピ層のみならず基板部分の外周部も0μmより深く、10μm以下だけ除去することによって、ウエハー割れはより一層回避することができる。異常なエピ成長をした部分では基板表面層にもダメージが加わって割れの原因になっていると考えられる。ダメージ層を除去するという意味では10μmより深くする意味は無く、却ってプロセス歩留りを低下させる(ウェットエッチングの場合、サイドエッチにより横方向にもエッチングされるので深過ぎるとサイドエッチが大きくなって余計な部分まで削り落としてしまう。RIEなどドライエッチの場合、レジストもRIEで削られるので深くするにはレジストなどのマスクも厚くする必要があるが、技術的に困難)。
InP窓層 n=1×1015cm−3 d=1.5μm
InGaAs受光層 n=1×1015cm−3、d=3.5μm
InPバッファ層 n=1×1015cm−3、d=2.0μm
InP基板(ウエハー) d=350μm
3 InPバッファ層
4 InGaAs受光層
5 InP窓層
7 SiN膜
8 反射防止膜
9 p電極
10 n電極
20 エピタキシャルウエハー
22 オリエンテーションフラット
22’ 副オリエンテーションフラット
23、24、25、26、27 割れ
28、29、30、32、33、34 破片
35 環状溝
36 中心部
37 周辺部
38 転位
39 面取り
40 エピ層
42 異常エピタキシャル成長隆起部
43 周辺基板露呈部
44 周辺除去部
45 レジスト膜
Claims (5)
- InP基板またはGaAs基板に薄膜結晶をエピタキシャル成長させたエピタキシャルウエハーを、ウエハー上にデバイスを作製するプロセス工程で処理する前に、ウエハーの外周部を0.3mm〜3mmの幅でエピ層を除去することを特徴とする半導体素子の製造方法。
- 基板部分の外周部の除去量をsとして0μm<s≦10μmの
範囲で除去することを特徴とする請求項1に記載の半導体素子の製造方法。 - ウエハーの厚みをtとして、外周部のエピ層の除去する幅をt〜5tとすることを特徴とする請求項1または2に記載の半導体素子の製造方法。
- エピタキシャルウエハーが、InP基板上に少なくともInGaAsPが形成されているエピタキシャルウエハーであって、InGaAsPの厚みが1μm以上あることを特徴とする請求項1〜3のいずれかに記載の半導体素子の製造方法。
- エピタキシャルウエハーが、InGaAsP層の上に更にInPキャップ層を設けてあるものであることを特徴とする請求項4に記載の半導体素子の製造方法。
Priority Applications (2)
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---|---|---|---|
JP2007022535A JP4974051B2 (ja) | 2007-02-01 | 2007-02-01 | 半導体素子の製造方法 |
US12/010,517 US8258061B2 (en) | 2007-02-01 | 2008-01-25 | Manufacturing method of electronic element |
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JP2007022535A JP4974051B2 (ja) | 2007-02-01 | 2007-02-01 | 半導体素子の製造方法 |
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JP2008192663A true JP2008192663A (ja) | 2008-08-21 |
JP4974051B2 JP4974051B2 (ja) | 2012-07-11 |
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US (1) | US8258061B2 (ja) |
JP (1) | JP4974051B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011082307A (ja) * | 2009-10-06 | 2011-04-21 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2019176110A (ja) * | 2018-03-29 | 2019-10-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
WO2020066544A1 (ja) * | 2018-09-26 | 2020-04-02 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4862965B1 (ja) * | 2011-01-25 | 2012-01-25 | 三菱電機株式会社 | 半導体ウェハ、半導体バー、半導体ウェハの製造方法、半導体バーの製造方法、半導体素子の製造方法 |
TWI636165B (zh) * | 2017-08-04 | 2018-09-21 | 財團法人工業技術研究院 | 磊晶晶圓 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03171729A (ja) * | 1989-11-30 | 1991-07-25 | Toshiba Corp | 化合物半導体素子の製造方法 |
JPH09181349A (ja) * | 1995-12-27 | 1997-07-11 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
JP2000243942A (ja) * | 1998-02-04 | 2000-09-08 | Canon Inc | 半導体基板とその製造方法 |
JP2002050785A (ja) * | 2000-08-01 | 2002-02-15 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP2007005658A (ja) * | 2005-06-24 | 2007-01-11 | Shin Etsu Handotai Co Ltd | 化合物半導体ウェーハおよびその製造方法 |
JP2007150017A (ja) * | 2005-11-29 | 2007-06-14 | Seiko Epson Corp | 半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212394A (en) | 1989-03-17 | 1993-05-18 | Sumitomo Electric Industries, Ltd. | Compound semiconductor wafer with defects propagating prevention means |
JP3368799B2 (ja) * | 1997-05-22 | 2003-01-20 | 住友電気工業株式会社 | Iii−v族化合物半導体ウェハおよびその製造方法 |
US6841848B2 (en) * | 2003-06-06 | 2005-01-11 | Analog Devices, Inc. | Composite semiconductor wafer and a method for forming the composite semiconductor wafer |
-
2007
- 2007-02-01 JP JP2007022535A patent/JP4974051B2/ja active Active
-
2008
- 2008-01-25 US US12/010,517 patent/US8258061B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03171729A (ja) * | 1989-11-30 | 1991-07-25 | Toshiba Corp | 化合物半導体素子の製造方法 |
JPH09181349A (ja) * | 1995-12-27 | 1997-07-11 | Mitsubishi Electric Corp | 半導体デバイスの製造方法 |
JP2000243942A (ja) * | 1998-02-04 | 2000-09-08 | Canon Inc | 半導体基板とその製造方法 |
JP2002050785A (ja) * | 2000-08-01 | 2002-02-15 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP2007005658A (ja) * | 2005-06-24 | 2007-01-11 | Shin Etsu Handotai Co Ltd | 化合物半導体ウェーハおよびその製造方法 |
JP2007150017A (ja) * | 2005-11-29 | 2007-06-14 | Seiko Epson Corp | 半導体装置の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011082307A (ja) * | 2009-10-06 | 2011-04-21 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
JP2019176110A (ja) * | 2018-03-29 | 2019-10-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP7056826B2 (ja) | 2018-03-29 | 2022-04-19 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
WO2020066544A1 (ja) * | 2018-09-26 | 2020-04-02 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ |
JP2020053513A (ja) * | 2018-09-26 | 2020-04-02 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ |
JP7147416B2 (ja) | 2018-09-26 | 2022-10-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ |
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Publication number | Publication date |
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US20080188078A1 (en) | 2008-08-07 |
JP4974051B2 (ja) | 2012-07-11 |
US8258061B2 (en) | 2012-09-04 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |