JP2008156747A5 - - Google Patents

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Publication number
JP2008156747A5
JP2008156747A5 JP2007276381A JP2007276381A JP2008156747A5 JP 2008156747 A5 JP2008156747 A5 JP 2008156747A5 JP 2007276381 A JP2007276381 A JP 2007276381A JP 2007276381 A JP2007276381 A JP 2007276381A JP 2008156747 A5 JP2008156747 A5 JP 2008156747A5
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JP
Japan
Prior art keywords
processing chamber
ground
sensor
substrate support
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007276381A
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English (en)
Japanese (ja)
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JP2008156747A (ja
JP5291848B2 (ja
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Publication date
Priority claimed from US11/561,463 external-priority patent/US8004293B2/en
Application filed filed Critical
Publication of JP2008156747A publication Critical patent/JP2008156747A/ja
Publication of JP2008156747A5 publication Critical patent/JP2008156747A5/ja
Application granted granted Critical
Publication of JP5291848B2 publication Critical patent/JP5291848B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007276381A 2006-11-20 2007-10-24 接地部材完全性インジケータを備えたプラズマ処理チャンバとその使用方法 Expired - Fee Related JP5291848B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/561,463 US8004293B2 (en) 2006-11-20 2006-11-20 Plasma processing chamber with ground member integrity indicator and method for using the same
US11/561463 2006-11-20

Publications (3)

Publication Number Publication Date
JP2008156747A JP2008156747A (ja) 2008-07-10
JP2008156747A5 true JP2008156747A5 (enExample) 2010-12-09
JP5291848B2 JP5291848B2 (ja) 2013-09-18

Family

ID=39416283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007276381A Expired - Fee Related JP5291848B2 (ja) 2006-11-20 2007-10-24 接地部材完全性インジケータを備えたプラズマ処理チャンバとその使用方法

Country Status (5)

Country Link
US (1) US8004293B2 (enExample)
JP (1) JP5291848B2 (enExample)
KR (1) KR100923594B1 (enExample)
CN (1) CN101187013B (enExample)
TW (1) TWI389187B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5655602A (en) 1992-08-28 1997-08-12 Marathon Oil Company Apparatus and process for drilling and completing multiple wells
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
CN102084472B (zh) * 2008-07-07 2013-07-03 朗姆研究公司 用于表征等离子体处理室内的膜的射频偏置电容耦合静电(rfb-cce)探针装置
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8466697B2 (en) * 2009-04-28 2013-06-18 Lam Research Corporation Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof
KR101711912B1 (ko) * 2009-09-16 2017-03-06 삼성전자주식회사 이동단말기의 효율적인 무선 충전을 위한 장치 및 방법
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
JP5852378B2 (ja) * 2011-09-13 2016-02-03 キヤノン株式会社 堆積膜形成方法および電子写真感光体の製造方法
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9245720B2 (en) * 2012-06-12 2016-01-26 Lam Research Corporation Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system
KR20150022163A (ko) * 2013-08-22 2015-03-04 삼성디스플레이 주식회사 플라즈마 처리 장치용 스트랩 및 이를 포함하는 플라즈마 처리 장치
US9595464B2 (en) * 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
JP6512954B2 (ja) * 2015-06-11 2019-05-15 東京エレクトロン株式会社 フォーカスリングを検査するためのシステム、及びフォーカスリングを検査する方法
US9903739B2 (en) * 2015-06-11 2018-02-27 Tokyo Electron Limited Sensor chip for electrostatic capacitance measurement and measuring device having the same
KR102099660B1 (ko) * 2015-10-02 2020-04-14 주식회사 원익아이피에스 기판처리장치
US10074549B2 (en) * 2016-03-28 2018-09-11 Tokyo Electron Limited Method for acquiring data indicating electrostatic capacitance
US10921251B2 (en) 2016-08-22 2021-02-16 Applied Materials, Inc. Chamber component part wear indicator and a system for detecting part wear
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
CN110730829A (zh) * 2017-06-01 2020-01-24 应用材料公司 延长在pecvd工艺腔室中接地带使用寿命
JP7186393B2 (ja) * 2018-12-06 2022-12-09 東京エレクトロン株式会社 プラズマ処理装置
JP7446335B2 (ja) * 2019-04-29 2024-03-08 アプライド マテリアルズ インコーポレイテッド 接地用ストラップアセンブリ
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US20240093380A1 (en) * 2022-09-21 2024-03-21 Applied Materials, Inc. Grounding devices for substrate processing chambers
KR102788403B1 (ko) 2022-11-23 2025-03-28 심경식 기판처리설비의 단선 방지 장치

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771230A (en) * 1986-10-02 1988-09-13 Testamatic Corporation Electro-luminescent method and testing system for unpopulated printed circuit boards, ceramic substrates, and the like having both electrical and electro-optical read-out
KR940010649A (ko) * 1992-10-14 1994-05-26 오오가 노리오 인쇄장치와 감광지
US5423936A (en) 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JPH0721964A (ja) * 1993-07-02 1995-01-24 Casio Comput Co Ltd 電子線分析装置
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6042686A (en) 1995-06-30 2000-03-28 Lam Research Corporation Power segmented electrode
US5900062A (en) * 1995-12-28 1999-05-04 Applied Materials, Inc. Lift pin for dechucking substrates
US6012600A (en) 1996-02-02 2000-01-11 Applied Materials, Inc. Pressure responsive clamp for a processing chamber
US6345589B1 (en) * 1996-03-29 2002-02-12 Applied Materials, Inc. Method and apparatus for forming a borophosphosilicate film
US6254746B1 (en) * 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US6057235A (en) * 1997-09-15 2000-05-02 Micron Technology, Inc. Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6827373B2 (en) * 1997-12-08 2004-12-07 Capture Business Cards Llc Business card stock with peel off labels, and method
GB9800405D0 (en) * 1998-01-10 1998-03-04 Reed Edward John Welding method and apparatus
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
CN1189595C (zh) * 1998-04-13 2005-02-16 东京电子株式会社 阻抗减小的室
JP3241332B2 (ja) * 1998-10-27 2001-12-25 日本電気株式会社 無線携帯端末のノイズ低減方法
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6349670B1 (en) * 1998-11-30 2002-02-26 Alps Electric Co., Ltd. Plasma treatment equipment
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
US6531030B1 (en) * 2000-03-31 2003-03-11 Lam Research Corp. Inductively coupled plasma etching apparatus
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US6364958B1 (en) 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
JP2001338914A (ja) * 2000-05-30 2001-12-07 Tokyo Electron Ltd ガス導入機構およびガス導入方法、ガスリーク検出方法、ならびに真空処理装置
US6384958B1 (en) * 2000-06-26 2002-05-07 Jds Uniphase Corporation Free-space thermo-optical devices
EP1174910A3 (en) 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP4666740B2 (ja) * 2000-10-06 2011-04-06 川崎マイクロエレクトロニクス株式会社 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法
US6558717B1 (en) * 2000-12-04 2003-05-06 Campina B.V. Method for the sequential precipitation of casein and calcium phosphate from a milk source
US7202690B2 (en) * 2001-02-19 2007-04-10 Nidec-Read Corporation Substrate inspection device and substrate inspecting method
KR100877243B1 (ko) * 2001-02-19 2009-01-07 니혼 덴산 리드 가부시끼가이샤 회로 기판 검사 장치 및 회로 기판을 검사하기 위한 방법
KR100773204B1 (ko) * 2001-04-13 2007-11-02 어플라이드 머티어리얼스, 인코포레이티드 전력 분배를 제어할 수 있는 유도 결합된 플라즈마 소스
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
FR2828539B1 (fr) * 2001-08-09 2006-06-30 Zf Sachs Ag Amortisseur d'oscillations a force d'amortissement variable
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US20050263070A1 (en) * 2004-05-25 2005-12-01 Tokyo Electron Limited Pressure control and plasma confinement in a plasma processing chamber
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
JP4705378B2 (ja) * 2005-01-31 2011-06-22 東京エレクトロン株式会社 処理装置及び処理方法
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
JP2007048986A (ja) * 2005-08-10 2007-02-22 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

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