JP2008147668A - デュアルダマシン用途における下面反射防止コーティング層の2ステップエッチング - Google Patents
デュアルダマシン用途における下面反射防止コーティング層の2ステップエッチング Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】一実施形態において、本方法は、BARC層で充填されたフィーチャーを有する基板を、エッチングチャンバに提供する工程と、NH3ガスを含む第1のガス混合物を、チャンバに供給して、フィーチャーを充填しているBARC層の第1の部分をエッチングする工程と、O2ガスを含む第2のガス混合物を、エッチングチャンバに供給して、フィーチャーに配置されたBARC層の残りの部分をエッチングする工程とを含む。
【選択図】図3
Description
本発明は、概して、半導体処理技術に関し、特に、デュアルダマシンエッチングプロセスにおける下面反射防止コーティング(BARC)層のエッチング方法に関する。
集積回路は、何百万個ものコンポーネント(例えば、トランジスタ、キャパシタ及びレジスタ)を単一チップに含めることのできる複雑なデバイスへと進化している。チップ設計を進化させるために、より速い回路、より大きな回路密度が必要とされ続けている。回路密度を大きくするには、集積回路コンポーネントの寸法を減じる必要がある。
従って、相互接続構造において、BARCを除去するプロセスを改善することが必要とされている。
基板処理中、チャンバ本体210内部のガス圧は、ガスパネル238及びスロットルバルブ227を用いて制御される。一実施形態において、チャンバ本体210内部のガス圧は、約0.1〜約999ミリトル(mTorr)に維持される。
DIAMOND)(登録商標)誘電体材料等の炭素ドープ酸化ケイ素(SiOC)、及びポリアミド等のその他ポリマーが例示される。誘電体バリア層408は、誘電率が約5.5以下の材料から選択される。一実施形態において、誘電体バリア層408は、炭素含有ケイ素層(SiC)、窒素ドープ炭素含有ケイ素層(SiCN)等である。例えば、誘電体バリア層408は、アプライドマテリアルズ社(Applied Materials,Inc.)より入手可能なブロック(BLOK)(登録商標)誘電体材料であってもよい。
第1のガス混合物をエッチングシステム202に供給しながら、ステップ304で、いくつかのプロセスパラメータを調整する。一実施形態において、エッチング反応器中のガス混合物の圧力は、約5ミリトル〜約300ミリトルの間で調整され、基板温度は、摂氏約−10度〜摂氏約55度に維持される。RF電源は、約150ワット〜約2000ワットの出力で印加される。NH3ガスは、約50sccm〜約1000sccm、例えば、約100sccm〜約800sccmの流量で流してよい。N2、Ar、Heガス等のその他の不活性ガスを流して、約50sccm〜約1000sccmの流量で第1のガス混合物に供給してもよい。
Claims (22)
- BARC層をフィーチャーから除去する方法であって、
BARC層で充填されたフィーチャーを有する基板を、エッチングチャンバに提供する工程と、
NH3ガスを含む第1のガス混合物を、前記チャンバに供給して、前記フィーチャーを充填している前記BARC層の第1の部分をエッチングする工程と、
O2ガスを含む第2のガス混合物を、前記エッチングチャンバに供給して、前記フィーチャーに配置された前記BARC層の残りの部分をエッチングする工程とを含む方法。 - 前記第1のガス混合物を供給する工程が、
NH3を、50sccm〜1000sccmの流量で、前記エッチングチャンバに流す工程を含む請求項1記載の方法。 - 前記第1のガス混合物を供給する工程が、
処理圧力を、約5ミリトル〜約300ミリトルに維持する工程を含む請求項1記載の方法。 - 前記第1のガス混合物を供給する工程が、
基板温度を、摂氏約−10度〜摂氏約55度に維持する請求項1記載の方法。 - 前記第1のガス混合物を供給する工程が、
プラズマ電力を、約150ワット〜約2000ワットで印加する工程を含む請求項1記載の方法。 - 前記第1のガス混合物を供給する工程が、
前記フィーチャーを充填している前記BARC層の前記第1の部分を、約20秒〜約200秒の処理時間でエッチングする工程を含む請求項1記載の方法。 - 前記第2のガス混合物を供給する工程が、
O2ガスを、50sccm〜500sccmの流量で、前記エッチングチャンバに流す工程を含む請求項1記載の方法。 - 前記第2のガス混合物を供給する工程が、
処理圧力を、約5ミリトル〜約50ミリトルに維持する工程を含む請求項1記載の方法。 - 前記第2のガス混合物を供給する工程が、
基板温度を、摂氏約−10度〜摂氏約55度に維持する請求項1記載の方法。 - 前記第2のガス混合物を供給する工程が、
プラズマ電力を、約150ワット〜約2000ワットで印加する工程を含む請求項1記載の方法。 - 前記第2のガス混合物を供給する工程が、
前記フィーチャーを充填している前記BARC層の前記残りの部分を、約10秒〜約60秒の処理時間でエッチングする工程を含む請求項1記載の方法。 - 前記第1のガス混合物供給と前記第2のガス混合物供給の間のエッチング時間が、約1:1〜約4:1の比を有する請求項1記載の方法。
- 前記ダマシン構造が、3.5未満の誘電率を有する誘電体絶縁層を含む請求項1記載の方法。
- 前記ダマシン構造が、炭素ドープ酸化ケイ素を含む誘電体絶縁層を含む請求項1記載の方法。
- 基板を提供する工程であって、前記基板が、前記基板の上部表面に配置されたフォトレジスト層を有している、工程を含む請求項1記載の方法。
- 前記BARC層をエッチングしている間、前記エッチングチャンバに供給された前記第1のガス混合物及び前記第2のガス混合物が、前記フォトレジスト層をエッチングする請求項15記載の方法。
- BARC層をフィーチャーから除去する方法であって、
誘電体絶縁層に形成され、BARC層で充填されたフィーチャーを有する基板を、エッチングチャンバに提供する工程と、
NH3ガスを含む第1のガス混合物を、前記チャンバに供給して、前記フィーチャーを充填している前記BARC層の第1の部分をエッチングする工程と、
O2ガスを含む第2のガス混合物を、前記チャンバに供給して、前記フィーチャーの前記BARC層の残りの部分をエッチングする工程とを含む方法。 - 前記第1のガス混合物を供給する工程が、
NH3ガスを、約50sccm〜約1000sccmの流量で流す工程を含む請求項17記載の方法。 - 前記第2のガス混合物を供給する工程が、
O2ガスを、約50sccm〜約500sccmの流量で流す工程を含む請求項17記載の方法。 - 前記第1のガス混合物供給と前記第2のガス混合物供給の間のエッチング時間が、約1:1〜約4:1の比を有する請求項17記載の方法。
- 前記誘電体絶縁層の誘電率が、3.5未満である請求項17記載の方法。
- BARC層をフィーチャーから除去する方法であって、
誘電体絶縁層に形成され、BARC層で充填されたフィーチャーを有する基板を、エッチングチャンバに提供する工程であって、前記誘電体層が、3.5未満の誘電率を有する工程と、
NH3ガスを含む第1のガス混合物を、約50sccm〜約1000sccmで、前記エッチングチャンバに供給して、前記フィーチャーを充填している前記BARC層の第1の部分をエッチングする工程と、
O2ガスを含む第2のガス混合物を、約50sccm〜約500sccmで、前記エッチングチャンバに供給して、前記フィーチャーの前記BARC層の残りの部分をエッチングする工程とを含む方法。
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US11/608,611 | 2006-12-08 | ||
US11/608,611 US7718543B2 (en) | 2006-12-08 | 2006-12-08 | Two step etching of a bottom anti-reflective coating layer in dual damascene application |
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TWI356454B (en) | 2012-01-11 |
US20080138997A1 (en) | 2008-06-12 |
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US7718543B2 (en) | 2010-05-18 |
CN101197277A (zh) | 2008-06-11 |
EP1930939A2 (en) | 2008-06-11 |
TW200834715A (en) | 2008-08-16 |
CN100552891C (zh) | 2009-10-21 |
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