JP2008147547A5 - - Google Patents

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Publication number
JP2008147547A5
JP2008147547A5 JP2006335528A JP2006335528A JP2008147547A5 JP 2008147547 A5 JP2008147547 A5 JP 2008147547A5 JP 2006335528 A JP2006335528 A JP 2006335528A JP 2006335528 A JP2006335528 A JP 2006335528A JP 2008147547 A5 JP2008147547 A5 JP 2008147547A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2006335528A
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JP2008147547A (ja
JP4954691B2 (ja
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Priority to JP2006335528A priority Critical patent/JP4954691B2/ja
Priority claimed from JP2006335528A external-priority patent/JP4954691B2/ja
Priority to US11/953,459 priority patent/US8119429B2/en
Publication of JP2008147547A publication Critical patent/JP2008147547A/ja
Publication of JP2008147547A5 publication Critical patent/JP2008147547A5/ja
Application granted granted Critical
Publication of JP4954691B2 publication Critical patent/JP4954691B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006335528A 2006-12-13 2006-12-13 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置 Expired - Fee Related JP4954691B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006335528A JP4954691B2 (ja) 2006-12-13 2006-12-13 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置
US11/953,459 US8119429B2 (en) 2006-12-13 2007-12-10 Method for fabricating nitride semiconductor laser device and nitride semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006335528A JP4954691B2 (ja) 2006-12-13 2006-12-13 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2008147547A JP2008147547A (ja) 2008-06-26
JP2008147547A5 true JP2008147547A5 (ja) 2009-09-17
JP4954691B2 JP4954691B2 (ja) 2012-06-20

Family

ID=39527139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006335528A Expired - Fee Related JP4954691B2 (ja) 2006-12-13 2006-12-13 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置

Country Status (2)

Country Link
US (1) US8119429B2 (ja)
JP (1) JP4954691B2 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103478A (ja) * 2008-09-25 2010-05-06 Panasonic Corp 窒化物半導体装置及びその製造方法
JP2010287805A (ja) * 2009-06-15 2010-12-24 Panasonic Corp 窒化物半導体装置及びその製造方法
TWI476953B (zh) * 2012-08-10 2015-03-11 Univ Nat Taiwan 半導體發光元件及其製作方法
GB2584150B (en) * 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983071A (ja) * 1995-09-08 1997-03-28 Rohm Co Ltd 半導体レーザ
JP2003142780A (ja) 1996-01-25 2003-05-16 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPH1027947A (ja) * 1996-07-12 1998-01-27 Matsushita Electric Ind Co Ltd 半導体レーザ
JP3988961B2 (ja) * 1996-07-25 2007-10-10 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP3787195B2 (ja) * 1996-09-06 2006-06-21 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JPH1093140A (ja) 1996-09-18 1998-04-10 Toshiba Corp ＧａＮ系発光装置
JP3898798B2 (ja) * 1997-05-27 2007-03-28 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2003249481A (ja) * 2002-02-22 2003-09-05 Mitsubishi Electric Corp 半導体装置の製造方法
KR100542720B1 (ko) * 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
JP4314188B2 (ja) * 2003-12-24 2009-08-12 パナソニック株式会社 窒化物系化合物半導体素子の製造方法
CN1638055A (zh) 2003-12-24 2005-07-13 松下电器产业株式会社 氮化物系化合物半导体元件的制造方法
JP2006032925A (ja) * 2004-06-17 2006-02-02 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法、光ピックアップ装置
US7320898B2 (en) 2004-06-17 2008-01-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for fabricating the same
JP2006128661A (ja) * 2004-09-29 2006-05-18 Matsushita Electric Ind Co Ltd 窒化物系半導体レーザ
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof

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