JP2008141167A5 - - Google Patents

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Publication number
JP2008141167A5
JP2008141167A5 JP2007251150A JP2007251150A JP2008141167A5 JP 2008141167 A5 JP2008141167 A5 JP 2008141167A5 JP 2007251150 A JP2007251150 A JP 2007251150A JP 2007251150 A JP2007251150 A JP 2007251150A JP 2008141167 A5 JP2008141167 A5 JP 2008141167A5
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JP
Japan
Prior art keywords
silicon
layer
bonded
conductive layer
oxygen
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JP2007251150A
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English (en)
Japanese (ja)
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JP2008141167A (ja
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Priority to JP2007251150A priority Critical patent/JP2008141167A/ja
Priority claimed from JP2007251150A external-priority patent/JP2008141167A/ja
Publication of JP2008141167A publication Critical patent/JP2008141167A/ja
Publication of JP2008141167A5 publication Critical patent/JP2008141167A5/ja
Withdrawn legal-status Critical Current

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JP2007251150A 2006-09-29 2007-09-27 導電層及び導電層を有する基板の形成方法、並びに半導体装置の作製方法 Withdrawn JP2008141167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007251150A JP2008141167A (ja) 2006-09-29 2007-09-27 導電層及び導電層を有する基板の形成方法、並びに半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006266264 2006-09-29
JP2007251150A JP2008141167A (ja) 2006-09-29 2007-09-27 導電層及び導電層を有する基板の形成方法、並びに半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2008141167A JP2008141167A (ja) 2008-06-19
JP2008141167A5 true JP2008141167A5 (enExample) 2010-10-28

Family

ID=39318447

Family Applications (1)

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JP2007251150A Withdrawn JP2008141167A (ja) 2006-09-29 2007-09-27 導電層及び導電層を有する基板の形成方法、並びに半導体装置の作製方法

Country Status (2)

Country Link
US (1) US7713836B2 (enExample)
JP (1) JP2008141167A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101305315B (zh) 2005-11-11 2010-05-19 株式会社半导体能源研究所 形成具有功能性的层的方法及半导体器件的制造方法
TWI424499B (zh) * 2006-06-30 2014-01-21 Semiconductor Energy Lab 製造半導體裝置的方法
JP5506172B2 (ja) * 2007-10-10 2014-05-28 株式会社半導体エネルギー研究所 半導体基板の作製方法
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
EP2330876B1 (en) * 2008-09-05 2017-11-01 Tokyo University of Science Foundation Method for producing transfer structure and matrix for use therein
WO2010070393A1 (en) * 2008-12-17 2010-06-24 Fci Method of manufacture of ic contact-less communication devices
JP5314616B2 (ja) * 2010-02-08 2013-10-16 富士フイルム株式会社 半導体素子用基板の製造方法
JP5578513B2 (ja) * 2010-03-04 2014-08-27 学校法人東京理科大学 金属微細構造体の製造方法並びに樹脂成形物の製造方法
KR101852190B1 (ko) * 2011-06-28 2018-04-25 엘지디스플레이 주식회사 플렉서블 표시장치의 제조방법
GB2500380A (en) * 2012-03-18 2013-09-25 Effect Photonics B V Arrangement and method of making electrical connections
KR20140019699A (ko) * 2012-08-07 2014-02-17 삼성디스플레이 주식회사 플렉시블 유기 발광 표시 장치 및 그 제조방법
US9436057B2 (en) 2013-09-23 2016-09-06 E Ink California, Llc Display panel with pre-patterned images
US10816868B2 (en) 2013-09-23 2020-10-27 E Ink California, Llc Active molecule delivery system comprising microcells
JP6453053B2 (ja) * 2014-11-13 2019-01-16 株式会社フジクラ 配線基板の製造方法
US10101865B2 (en) 2015-01-30 2018-10-16 Fujikura Ltd. Wiring body, wiring board, and touch sensor
DE102016212129B4 (de) * 2016-07-04 2022-05-19 Schweizer Electronic Ag Hochfrequenz-Sende-/Empfangselement und Verfahren zur Herstellung eines Hochfrequenz-Sende-/Empfangselementes
US11802212B2 (en) * 2017-09-21 2023-10-31 Giesecke+Devrient Currency Technology Gmbh Method for producing pigment fragments with a predefined internal and/or external contour using a crack-forming layer, and pigment fragments
JP7591518B2 (ja) * 2019-12-09 2024-11-28 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法
CN118824609A (zh) * 2024-08-13 2024-10-22 新铂科技(东莞)有限公司 一种高结合力柔性导电膜及其制备方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH04240792A (ja) * 1991-01-24 1992-08-28 Matsushita Electric Ind Co Ltd 回路基板の製造方法
JP2919732B2 (ja) 1993-12-03 1999-07-19 大日精化工業株式会社 剥離性処理剤
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5834327A (en) * 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
JP2003136628A (ja) 2001-11-01 2003-05-14 Toray Ind Inc 金属酸化物積層フイルム、金属酸化物積層体およびこれらの製造方法
US6866949B2 (en) * 2002-03-08 2005-03-15 Dai Nippon Printing Co., Ltd. Substrate film, gas barrier film, and display using the same
JP2004310502A (ja) 2003-04-08 2004-11-04 Matsushita Electric Ind Co Ltd 非接触型ｉｃカード
JP4196377B2 (ja) * 2003-09-09 2008-12-17 ソニーケミカル＆インフォメーションデバイス株式会社 電子部品の実装方法
TWI372462B (en) * 2003-10-28 2012-09-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006080440A (ja) * 2004-09-13 2006-03-23 Casio Micronics Co Ltd 回路基板及び半導体装置
JP2006114577A (ja) * 2004-10-13 2006-04-27 Mitsui Chemicals Inc 回路基板およびその製造方法
CN101305315B (zh) * 2005-11-11 2010-05-19 株式会社半导体能源研究所 形成具有功能性的层的方法及半导体器件的制造方法

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