JP2002343995A5 - - Google Patents
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- Publication number
- JP2002343995A5 JP2002343995A5 JP2001142014A JP2001142014A JP2002343995A5 JP 2002343995 A5 JP2002343995 A5 JP 2002343995A5 JP 2001142014 A JP2001142014 A JP 2001142014A JP 2001142014 A JP2001142014 A JP 2001142014A JP 2002343995 A5 JP2002343995 A5 JP 2002343995A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor layer
- manufacturing
- forming
- integrated thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 description 70
- 239000004065 semiconductor Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 28
- 238000000926 separation method Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 6
- 238000010329 laser etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001142014A JP5288149B2 (ja) | 2001-05-11 | 2001-05-11 | 集積型薄膜素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001142014A JP5288149B2 (ja) | 2001-05-11 | 2001-05-11 | 集積型薄膜素子の製造方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012224853A Division JP5472420B2 (ja) | 2012-10-10 | 2012-10-10 | 集積型薄膜素子の製造方法 |
| JP2012224852A Division JP5472419B2 (ja) | 2012-10-10 | 2012-10-10 | 集積型薄膜素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002343995A JP2002343995A (ja) | 2002-11-29 |
| JP2002343995A5 true JP2002343995A5 (enExample) | 2008-04-24 |
| JP5288149B2 JP5288149B2 (ja) | 2013-09-11 |
Family
ID=18988384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001142014A Expired - Fee Related JP5288149B2 (ja) | 2001-05-11 | 2001-05-11 | 集積型薄膜素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5288149B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4563085B2 (ja) * | 2004-06-15 | 2010-10-13 | 三菱重工業株式会社 | 薄膜太陽電池 |
| JP2011146678A (ja) * | 2009-12-16 | 2011-07-28 | Kyocera Corp | 太陽電池素子の製造方法 |
| JP5472419B2 (ja) * | 2012-10-10 | 2014-04-16 | ソニー株式会社 | 集積型薄膜素子の製造方法 |
| US9496128B1 (en) | 2015-10-15 | 2016-11-15 | International Business Machines Corporation | Controlled spalling utilizing vaporizable release layers |
| CN105720121A (zh) * | 2016-02-18 | 2016-06-29 | 安徽旭能光伏电力有限公司 | 一种晶体硅柔性太阳能电池片及制造工艺 |
| KR102550104B1 (ko) * | 2016-12-09 | 2023-06-30 | 엠파워 테크놀로지 인코포레이티드 | 고성능 태양 전지, 이의 어레이 및 제조 방법 |
| JP6782452B2 (ja) * | 2016-12-20 | 2020-11-11 | パナソニックＩｐマネジメント株式会社 | 太陽電池セル |
| JPWO2024075738A1 (enExample) * | 2022-10-03 | 2024-04-11 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138086A (ja) * | 1982-02-10 | 1983-08-16 | Sumitomo Electric Ind Ltd | 半導体デバイスの製造方法 |
| JPH09298339A (ja) * | 1996-04-30 | 1997-11-18 | Rohm Co Ltd | 半導体レーザの製法 |
| JPH1027766A (ja) * | 1996-07-09 | 1998-01-27 | Sony Corp | 固体材料の劈開方法及び劈開装置 |
| JPH10229211A (ja) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | 光電変換装置およびその製造方法 |
| JP4441938B2 (ja) * | 1998-12-28 | 2010-03-31 | ソニー株式会社 | 集積型薄膜素子およびその製造方法 |
| JP2000223444A (ja) * | 1999-01-28 | 2000-08-11 | Sony Corp | 半導体製造方法 |
-
2001
- 2001-05-11 JP JP2001142014A patent/JP5288149B2/ja not_active Expired - Fee Related
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