JP6782452B2 - 太陽電池セル - Google Patents
太陽電池セル Download PDFInfo
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- JP6782452B2 JP6782452B2 JP2018557584A JP2018557584A JP6782452B2 JP 6782452 B2 JP6782452 B2 JP 6782452B2 JP 2018557584 A JP2018557584 A JP 2018557584A JP 2018557584 A JP2018557584 A JP 2018557584A JP 6782452 B2 JP6782452 B2 JP 6782452B2
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- 239000004065 semiconductor Substances 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 239000002923 metal particle Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
半導体基板(11)と、半導体基板11の主面(第2主面11b)上の第1領域(W1)に設けられるn型半導体層(第1導電型層12n)と、半導体基板(11)の主面(第2主面11b)上の第1領域(W1)と異なる第2領域(W2)に設けられるp型半導体層(第2導電型層13p)と、を含む光電変換部(10)と、
n型半導体層(第1導電型層12n)上に設けられるn側電極(14)と、
p型半導体層(第2導電型層13p)上に設けられるp側電極(15)と、
光電変換部(10)の外部に設けられ、n側電極(14)とp側電極(15)の間に接続される非オーミック性の抵抗体(32)と、を備える。
半導体基板(11)と、
半導体基板(11)の主面(第2主面11b)上の第1領域(W1)に設けられるn型半導体層(第1導電型層12n)と、
半導体基板(11)の主面(第2主面11b)上の第1領域(W1)と異なる第2領域(W2)に設けられるp型半導体層(第2導電型層13p)と、
n型半導体層(第1導電型層12n)上に設けられるn側電極(14)と、
p型半導体層(第2導電型層13p)上に設けられるp側電極(15)と、
n側電極(14)とp側電極(15)の間に接続される非オーミック性の抵抗構造(30)と、を備える。
n側電極(14)およびp側電極(15)の少なくとも一方は金属(金属電極層23)を含み、
抵抗体(32)は、金属(金属電極層23)とショットキー接合する材料を含んでもよい。
Claims (7)
- 半導体基板と、前記半導体基板の主面上の第1領域に設けられるn型半導体層と、前記半導体基板の前記主面上の前記第1領域と異なる第2領域に設けられるp型半導体層と、を含む光電変換部と、
前記n型半導体層上に設けられるn側電極と、
前記p型半導体層上に設けられるp側電極と、
前記光電変換部の外部に設けられ、前記n側電極と前記p側電極の間に接続され、所定の降伏電圧以上の電圧が印加された場合に電流が流れるよう構成される非オーミック性の抵抗体と、を備える太陽電池セル。 - 前記抵抗体は、前記n側電極および前記p側電極の上に設けられる請求項1に記載の太陽電池セル。
- 前記抵抗体は、前記n側電極と前記p側電極の間を分離する溝に設けられる請求項1または2に記載の太陽電池セル。
- 前記抵抗体の前記n側電極と前記p側電極の間での降伏電圧は、前記太陽電池セルの開放電圧よりも大きい請求項1から3のいずれか一項に記載の太陽電池セル。
- 前記抵抗体は、粒界を有する半導体粒子、表面酸化膜を有する半導体粒子および表面酸化膜を有する金属粒子の少なくとも一つを含む請求項1から4のいずれか一項に記載の太陽電池セル。
- 前記n側電極および前記p側電極の少なくとも一方は金属を含み、
前記抵抗体は、前記金属とショットキー接合する材料を含む請求項1から4のいずれか一項に記載の太陽電池セル。 - 半導体基板と、
前記半導体基板の主面上の第1領域に設けられるn型半導体層と、
前記半導体基板の前記主面上の前記第1領域と異なる第2領域に設けられるp型半導体層と、
前記n型半導体層上に設けられるn側電極と、
前記p型半導体層上に設けられるp側電極と、
前記n側電極と前記p側電極の間を分離する溝に設けられ、前記n側電極と前記p側電極の間を接続し、所定の降伏電圧以上の電圧が印加された場合に電流が流れるよう構成される非オーミック性の抵抗構造と、を備える太陽電池セル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016247070 | 2016-12-20 | ||
JP2016247070 | 2016-12-20 | ||
PCT/JP2017/039399 WO2018116644A1 (ja) | 2016-12-20 | 2017-10-31 | 太陽電池セル |
Publications (2)
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JPWO2018116644A1 JPWO2018116644A1 (ja) | 2019-06-24 |
JP6782452B2 true JP6782452B2 (ja) | 2020-11-11 |
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JP2018557584A Active JP6782452B2 (ja) | 2016-12-20 | 2017-10-31 | 太陽電池セル |
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JP (1) | JP6782452B2 (ja) |
WO (1) | WO2018116644A1 (ja) |
Families Citing this family (1)
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JP2021129085A (ja) * | 2020-02-17 | 2021-09-02 | パナソニック株式会社 | 太陽電池セル |
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JP2002016275A (ja) * | 2000-06-27 | 2002-01-18 | Canon Inc | 光起電力素子、その製造方法、及び太陽電池モジュール |
US9748414B2 (en) * | 2011-05-20 | 2017-08-29 | Arthur R. Zingher | Self-activated front surface bias for a solar cell |
JP2014049724A (ja) * | 2012-09-04 | 2014-03-17 | Sharp Corp | 太陽電池モジュール |
JP2014099490A (ja) * | 2012-11-14 | 2014-05-29 | Kyushu Institute Of Technology | バリスタ及びその製造方法 |
JP6369680B2 (ja) * | 2014-05-30 | 2018-08-08 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6338990B2 (ja) * | 2014-09-19 | 2018-06-06 | 株式会社東芝 | 多接合型太陽電池 |
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- 2017-10-31 JP JP2018557584A patent/JP6782452B2/ja active Active
- 2017-10-31 WO PCT/JP2017/039399 patent/WO2018116644A1/ja active Application Filing
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WO2018116644A1 (ja) | 2018-06-28 |
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