JP2008134625A5

JP2008134625A5 -

Info

Publication number: JP2008134625A5
Application number: JP2007277514A
Authority: JP
Filing date: 2007-10-25
Publication date: 2012-01-19

Claims

A transistor, a storage capacitor, a first switch, a second switch, a third switch, and a fourth switch;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to a second wiring through the storage capacitor and the fourth switch;
A gate electrode of the transistor is electrically connected to a third wiring through the storage capacitor and the first switch. However , the semiconductor device is characterized in that a transistor connected in parallel with the light emitting element is provided. Excluding semiconductor devices) .

A transistor, a first storage capacitor, a second storage capacitor, a first switch, a second switch, a third switch, and a fourth switch;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
One of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the second storage capacitor,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to a second wiring through the first storage capacitor and the fourth switch;
A gate electrode of the transistor is electrically connected to a third wiring through the first storage capacitor and the first switch (provided that the transistor is connected in parallel with the light emitting element) Except for semiconductor devices having a transistor) .

A transistor, a first storage capacitor, a second storage capacitor, a first switch, a second switch, a third switch, a fourth switch, and a fifth switch;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
One of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the second storage capacitor,
One of a source electrode and a drain electrode of the transistor is electrically connected to a fourth wiring through a fifth switch;
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to a second wiring through the first storage capacitor and the fourth switch;
A gate electrode of the transistor is electrically connected to a third wiring through the first storage capacitor and the first switch (provided that the transistor is connected in parallel with the light emitting element). Except for semiconductor devices having a transistor) .

In any one of Claims 1 thru | or 3,
The semiconductor device according to claim 1, wherein the second wiring is the same as the wiring for controlling the first switch.

In any one of Claims 1 thru | or 3,
2. The semiconductor device according to claim 1, wherein the second wiring is any one of scanning lines for controlling the first switch to the fourth switch of the previous row or the next row.

A transistor, a first storage capacitor, a second storage capacitor, a first switch, a second switch, a third switch, and a fourth switch;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
One of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the second storage capacitor,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to the first wiring through the first storage capacitor and the fourth switch;
A gate electrode of the transistor is electrically connected to a third wiring through the first storage capacitor and the first switch (provided that the transistor is connected in parallel with the light emitting element) Except for semiconductor devices having a transistor) .

A transistor, a first storage capacitor, a second storage capacitor, a first switch, a second switch, a third switch, and a rectifying element;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
One of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the second storage capacitor,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to a second wiring through the first storage capacitor and the rectifier;
A gate electrode of the transistor is electrically connected to a third wiring through the first storage capacitor and the first switch (provided that the transistor is connected in parallel with the light emitting element). Except for semiconductor devices having a transistor) .

A transistor, a first storage capacitor, a second storage capacitor, a first switch, a second switch, a third switch, and a fourth switch;
One of the source electrode and the drain electrode of the transistor is electrically connected to the pixel electrode of the light emitting element ,
One of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the second storage capacitor,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the first wiring through the second switch,
The other of the source electrode and the drain electrode of the transistor is electrically connected to the gate electrode of the transistor through the third switch,
A gate electrode of the transistor is electrically connected to a third wiring through the first storage capacitor and the first switch;
The semiconductor device is characterized in that the fourth switch is electrically connected in parallel with the first storage capacitor and is electrically connected to the third wiring via the first switch. (However, a semiconductor device having a transistor connected in parallel with the light emitting element is excluded) .

In any one of Claims 1 thru | or 8,
The semiconductor device is a thin film transistor.

In any one of Claims 1 thru | or 9,
The semiconductor device is an N-channel transistor.

In any one of Claims 1 to 10,
A semiconductor device, wherein the semiconductor layer of the transistor is made of an amorphous semiconductor film.

In any one of Claims 1 to 11,
A semiconductor device, wherein the semiconductor layer of the transistor is made of amorphous silicon.

In any one of Claims 1 thru | or 9,
A semiconductor device, wherein the semiconductor layer of the transistor is made of a crystalline semiconductor film.

In any one of Claims 1 thru / or Claim 13,
The semiconductor device is characterized in that the potential of the first wiring is higher than a value obtained by adding the threshold voltage of the transistor to the potential of the pixel electrode.

In any one of Claims 1 thru | or 9,
The semiconductor device is a P-channel transistor.

In any one of Claim 1 thru | or Claim 9, and Claim 15,
The semiconductor device according to claim 1, wherein the potential of the first wiring is lower than a value obtained by subtracting a threshold voltage of the transistor from the potential of the pixel electrode.

In any one of Claims 1 thru | or 16,
The semiconductor device, wherein the first to fourth switches are transistors.

A first holding capacity;
One of the source electrode and the drain electrode is electrically connected to the load, the other of the source electrode and the drain electrode is electrically connected to the first wiring, and the gate electrode is connected to the second via the first storage capacitor. A transistor electrically connected to the wiring;
A second holding capacitor for holding a gate-source voltage of the transistor;
Means for holding the first voltage in the first holding capacitor and holding the second voltage in the second holding capacitor;
Means for discharging a second voltage of the second storage capacitor to a threshold voltage of the transistor;
Wherein a and a means for supplying the current set by the transistor by inputting a potential in accordance with the video signal from said second wiring to said first storage capacitor to the load (provided that Except a semiconductor device having a transistor connected in parallel with the load) .

In claim 18,
The semiconductor device is a thin film transistor.

In claim 18 or claim 19,
The semiconductor device is an N-channel transistor.

In any one of claims 18 to 20,
A semiconductor device, wherein the semiconductor layer of the transistor is made of an amorphous semiconductor film.

In any one of Claims 18 to 21,
A semiconductor device, wherein the semiconductor layer of the transistor is made of amorphous silicon.

In any one of claims 18 to 20,
A semiconductor device, wherein the semiconductor layer of the transistor is made of a crystalline semiconductor film.

In claim 18 or claim 19,
The semiconductor device is a P-channel transistor.

A display device comprising the semiconductor device according to any one of claims 1 to 24.

An electronic apparatus comprising the display device according to claim 25 in a display portion.