JP2008098311A - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP2008098311A
JP2008098311A JP2006276949A JP2006276949A JP2008098311A JP 2008098311 A JP2008098311 A JP 2008098311A JP 2006276949 A JP2006276949 A JP 2006276949A JP 2006276949 A JP2006276949 A JP 2006276949A JP 2008098311 A JP2008098311 A JP 2008098311A
Authority
JP
Japan
Prior art keywords
measurement
wafer
exposure apparatus
optical system
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006276949A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008098311A5 (enExample
Inventor
Yukio Tokuda
幸夫 徳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006276949A priority Critical patent/JP2008098311A/ja
Priority to US11/866,686 priority patent/US7463334B2/en
Priority to KR1020070100816A priority patent/KR100882046B1/ko
Priority to TW096137858A priority patent/TW200837805A/zh
Publication of JP2008098311A publication Critical patent/JP2008098311A/ja
Publication of JP2008098311A5 publication Critical patent/JP2008098311A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006276949A 2006-10-10 2006-10-10 露光装置及びデバイス製造方法 Withdrawn JP2008098311A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006276949A JP2008098311A (ja) 2006-10-10 2006-10-10 露光装置及びデバイス製造方法
US11/866,686 US7463334B2 (en) 2006-10-10 2007-10-03 Exposure apparatus and device manufacturing method
KR1020070100816A KR100882046B1 (ko) 2006-10-10 2007-10-08 노광장치 및 디바이스의 제조방법
TW096137858A TW200837805A (en) 2006-10-10 2007-10-09 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006276949A JP2008098311A (ja) 2006-10-10 2006-10-10 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2008098311A true JP2008098311A (ja) 2008-04-24
JP2008098311A5 JP2008098311A5 (enExample) 2009-01-29

Family

ID=39274711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006276949A Withdrawn JP2008098311A (ja) 2006-10-10 2006-10-10 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7463334B2 (enExample)
JP (1) JP2008098311A (enExample)
KR (1) KR100882046B1 (enExample)
TW (1) TW200837805A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232753A (ja) * 2013-05-28 2014-12-11 株式会社ニコン 露光装置及びデバイス製造方法
JP2018049279A (ja) * 2017-10-18 2018-03-29 株式会社ニコン 露光装置及びデバイス製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5381029B2 (ja) * 2008-11-10 2014-01-08 ウシオ電機株式会社 露光装置
EP2469340B1 (en) 2010-12-21 2021-01-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI571707B (zh) 2011-04-22 2017-02-21 瑪波微影Ｉｐ公司 用於處理諸如晶圓的標靶的微影系統，用於操作用於處理諸如晶圓的標靶的微影系統的方法，以及使用在此種微影系統的基板
TWI561936B (en) 2011-04-22 2016-12-11 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark
WO2012158025A2 (en) 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
US9575768B1 (en) 2013-01-08 2017-02-21 Marvell International Ltd. Loading boot code from multiple memories
EP3028145A1 (en) 2013-07-31 2016-06-08 Marvell World Trade Ltd. Parallelizing boot operations

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4133037C2 (de) 1990-10-05 1999-07-22 Canon Kk Belichtungsvorrichtung
JP3266515B2 (ja) * 1996-08-02 2002-03-18 キヤノン株式会社 露光装置、デバイス製造方法およびステージ装置
US6020964A (en) * 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JP3554186B2 (ja) 1998-04-08 2004-08-18 キヤノン株式会社 露光装置、デバイス製造方法および反力受け方法
JP2000031015A (ja) 1998-07-13 2000-01-28 Nikon Corp 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法
US20030173833A1 (en) 2000-04-21 2003-09-18 Hazelton Andrew J. Wafer stage with magnetic bearings
US6538720B2 (en) * 2001-02-28 2003-03-25 Silicon Valley Group, Inc. Lithographic tool with dual isolation system and method for configuring the same
KR20060001127A (ko) * 2004-06-30 2006-01-06 삼성전자주식회사 반도체 제조장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232753A (ja) * 2013-05-28 2014-12-11 株式会社ニコン 露光装置及びデバイス製造方法
JP2018049279A (ja) * 2017-10-18 2018-03-29 株式会社ニコン 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
US20080084547A1 (en) 2008-04-10
KR20080032605A (ko) 2008-04-15
KR100882046B1 (ko) 2009-02-09
TW200837805A (en) 2008-09-16
US7463334B2 (en) 2008-12-09

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