KR100882046B1 - 노광장치 및 디바이스의 제조방법 - Google Patents

노광장치 및 디바이스의 제조방법 Download PDF

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Publication number
KR100882046B1
KR100882046B1 KR1020070100816A KR20070100816A KR100882046B1 KR 100882046 B1 KR100882046 B1 KR 100882046B1 KR 1020070100816 A KR1020070100816 A KR 1020070100816A KR 20070100816 A KR20070100816 A KR 20070100816A KR 100882046 B1 KR100882046 B1 KR 100882046B1
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KR
South Korea
Prior art keywords
support
substrate
wafer
optical system
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070100816A
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English (en)
Korean (ko)
Other versions
KR20080032605A (ko
Inventor
유키오 토쿠다
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20080032605A publication Critical patent/KR20080032605A/ko
Application granted granted Critical
Publication of KR100882046B1 publication Critical patent/KR100882046B1/ko
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070100816A 2006-10-10 2007-10-08 노광장치 및 디바이스의 제조방법 Expired - Fee Related KR100882046B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006276949A JP2008098311A (ja) 2006-10-10 2006-10-10 露光装置及びデバイス製造方法
JPJP-P-2006-00276949 2006-10-10

Publications (2)

Publication Number Publication Date
KR20080032605A KR20080032605A (ko) 2008-04-15
KR100882046B1 true KR100882046B1 (ko) 2009-02-09

Family

ID=39274711

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070100816A Expired - Fee Related KR100882046B1 (ko) 2006-10-10 2007-10-08 노광장치 및 디바이스의 제조방법

Country Status (4)

Country Link
US (1) US7463334B2 (enExample)
JP (1) JP2008098311A (enExample)
KR (1) KR100882046B1 (enExample)
TW (1) TW200837805A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5381029B2 (ja) * 2008-11-10 2014-01-08 ウシオ電機株式会社 露光装置
EP2469340B1 (en) 2010-12-21 2021-01-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI571707B (zh) 2011-04-22 2017-02-21 瑪波微影Ｉｐ公司 用於處理諸如晶圓的標靶的微影系統，用於操作用於處理諸如晶圓的標靶的微影系統的方法，以及使用在此種微影系統的基板
TWI561936B (en) 2011-04-22 2016-12-11 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark
WO2012158025A2 (en) 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
US9575768B1 (en) 2013-01-08 2017-02-21 Marvell International Ltd. Loading boot code from multiple memories
JP6229311B2 (ja) * 2013-05-28 2017-11-15 株式会社ニコン 露光装置及びデバイス製造方法
EP3028145A1 (en) 2013-07-31 2016-06-08 Marvell World Trade Ltd. Parallelizing boot operations
JP6493481B2 (ja) * 2017-10-18 2019-04-03 株式会社ニコン 露光装置及びデバイス製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031015A (ja) 1998-07-13 2000-01-28 Nikon Corp 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法
KR20000070669A (ko) * 1997-12-02 2000-11-25 에이에스엠 리소그라피 비.브이. 간섭계 시스템 및 이를 포함하는 전사장치
US20030173833A1 (en) 2000-04-21 2003-09-18 Hazelton Andrew J. Wafer stage with magnetic bearings
KR20060001127A (ko) * 2004-06-30 2006-01-06 삼성전자주식회사 반도체 제조장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4133037C2 (de) 1990-10-05 1999-07-22 Canon Kk Belichtungsvorrichtung
JP3266515B2 (ja) * 1996-08-02 2002-03-18 キヤノン株式会社 露光装置、デバイス製造方法およびステージ装置
JP3554186B2 (ja) 1998-04-08 2004-08-18 キヤノン株式会社 露光装置、デバイス製造方法および反力受け方法
US6538720B2 (en) * 2001-02-28 2003-03-25 Silicon Valley Group, Inc. Lithographic tool with dual isolation system and method for configuring the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000070669A (ko) * 1997-12-02 2000-11-25 에이에스엠 리소그라피 비.브이. 간섭계 시스템 및 이를 포함하는 전사장치
JP2000031015A (ja) 1998-07-13 2000-01-28 Nikon Corp 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法
US20030173833A1 (en) 2000-04-21 2003-09-18 Hazelton Andrew J. Wafer stage with magnetic bearings
KR20060001127A (ko) * 2004-06-30 2006-01-06 삼성전자주식회사 반도체 제조장치

Also Published As

Publication number Publication date
JP2008098311A (ja) 2008-04-24
US20080084547A1 (en) 2008-04-10
KR20080032605A (ko) 2008-04-15
TW200837805A (en) 2008-09-16
US7463334B2 (en) 2008-12-09

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