KR20080032605A - 노광장치 및 디바이스의 제조방법 - Google Patents
노광장치 및 디바이스의 제조방법 Download PDFInfo
- Publication number
- KR20080032605A KR20080032605A KR1020070100816A KR20070100816A KR20080032605A KR 20080032605 A KR20080032605 A KR 20080032605A KR 1020070100816 A KR1020070100816 A KR 1020070100816A KR 20070100816 A KR20070100816 A KR 20070100816A KR 20080032605 A KR20080032605 A KR 20080032605A
- Authority
- KR
- South Korea
- Prior art keywords
- support
- substrate
- optical system
- projection optical
- wafer
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (8)
- 투영광학계를 가지고, 레티클과 기판을 얼라인먼트하고, 상기 투영광학계를 통하여 상기 레티클의 패턴을 상기 기판에 투영하여 상기 기판을 노광하는 노광장치로서,얼라인먼트를 계측하도록 구성된 계측디바이스;상기 계측디바이스를 지지하도록 구성된 제 1 지지체; 및상기 투영광학계를 지지하도록 구성된 제 2 지지체를 포함하고상기 제 1 지지체 및 제 2 지지체는 서로 분리되어 있는 것을 특징으로 하는 노광장치.
- 제 1 항에 있어서,상기 제 1 지지체 및 상기 제 2 지지체를 지지하도록 구성된 공통의 프레임을 부가하여 구비하는 것을 특징으로 하는 노광장치.
- 제 2 항에 있어서,상기 제 1 지지체와 상기 프레임과의 사이에 배치된 제 1 진동저감유닛; 및상기 제 2 지지체와 상기 프레임과의 사이에 배치된 제 2 진동저감유닛을 부가하여 구비하는 것을 특징으로 하는 노광장치.
- 제 1 항에 있어서,상기 제 1 지지체와 상기 투영광학계의 위치관계를 계측하도록 구성된 제 2 계측디바이스를 부가하여 구비하고,상기 제 2 계측디바이스에 의해 얻은 위치관계에 의거하여 상기 제 1 지지체와 상기 투영광학계의 위치관계가 조정되는 것을 특징으로 하는 노광장치.
- 제 1항에 있어서,상기 계측디바이스가 상기 투영광학계의 광축에 평행한 방향에 있어서의 상기 기판의 위치를 계측하도록 구성된 Z계측기, 및상기 광축에 직교하는 방향에 있어서의 상기 기판 상의 마크의 위치를 계측하도록 구성된 X-Y계측기를 포함하는 것을 특징으로 하는 노광장치.
- 제 1 항에 있어서,상기 계측디바이스가 상기 레티클을 유지하도록 구성된 원판스테이지의 위치를 계측하도록 구성된 제 1 계측기 및 상기 기판을 유지하도록 구성된 기판스테이지의 위치를 계측하도록 구성된 제 2 계측기 중의 적어도 하나를 포함하는 것을 특징으로 하는 노광장치.
- 제 1 항에 있어서,상기 기판 상의 쇼트의 위치가 계측되는 계측스테이션, 및상기 계측스테이션에서 행해진 계측에 의거하여 상기 기판이 위치 결정되어 상기 위치결정된 기판이 노광되는 노광스테이션을 부가하여 구비하는 것을 특징으로 하는 노광장치.
- 제 1 항에 기재된 노광장치를 사용하여 기판을 노광하는 공정;상기 노광된 기판을 현상하는 공정; 및상기 현상된 기판을 처리하여 디바이스를 제조하는 공정을 구비하는 것을 특징으로 하는 디바이스의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00276949 | 2006-10-10 | ||
JP2006276949A JP2008098311A (ja) | 2006-10-10 | 2006-10-10 | 露光装置及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080032605A true KR20080032605A (ko) | 2008-04-15 |
KR100882046B1 KR100882046B1 (ko) | 2009-02-09 |
Family
ID=39274711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070100816A KR100882046B1 (ko) | 2006-10-10 | 2007-10-08 | 노광장치 및 디바이스의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7463334B2 (ko) |
JP (1) | JP2008098311A (ko) |
KR (1) | KR100882046B1 (ko) |
TW (1) | TW200837805A (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5381029B2 (ja) * | 2008-11-10 | 2014-01-08 | ウシオ電機株式会社 | 露光装置 |
EP2469340B1 (en) * | 2010-12-21 | 2021-01-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2699967B1 (en) | 2011-04-22 | 2023-09-13 | ASML Netherlands B.V. | Position determination in a lithography system using a substrate having a partially reflective position mark |
TW201248336A (en) | 2011-04-22 | 2012-12-01 | Mapper Lithography Ip Bv | Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer |
US9383662B2 (en) | 2011-05-13 | 2016-07-05 | Mapper Lithography Ip B.V. | Lithography system for processing at least a part of a target |
US9575768B1 (en) | 2013-01-08 | 2017-02-21 | Marvell International Ltd. | Loading boot code from multiple memories |
JP6229311B2 (ja) * | 2013-05-28 | 2017-11-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP3028145A1 (en) | 2013-07-31 | 2016-06-08 | Marvell World Trade Ltd. | Parallelizing boot operations |
JP6493481B2 (ja) * | 2017-10-18 | 2019-04-03 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4133037C2 (de) | 1990-10-05 | 1999-07-22 | Canon Kk | Belichtungsvorrichtung |
JP3266515B2 (ja) * | 1996-08-02 | 2002-03-18 | キヤノン株式会社 | 露光装置、デバイス製造方法およびステージ装置 |
US6020964A (en) * | 1997-12-02 | 2000-02-01 | Asm Lithography B.V. | Interferometer system and lithograph apparatus including an interferometer system |
JP3554186B2 (ja) | 1998-04-08 | 2004-08-18 | キヤノン株式会社 | 露光装置、デバイス製造方法および反力受け方法 |
JP2000031015A (ja) | 1998-07-13 | 2000-01-28 | Nikon Corp | 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法 |
US20030173833A1 (en) | 2000-04-21 | 2003-09-18 | Hazelton Andrew J. | Wafer stage with magnetic bearings |
US6538720B2 (en) * | 2001-02-28 | 2003-03-25 | Silicon Valley Group, Inc. | Lithographic tool with dual isolation system and method for configuring the same |
KR20060001127A (ko) * | 2004-06-30 | 2006-01-06 | 삼성전자주식회사 | 반도체 제조장치 |
-
2006
- 2006-10-10 JP JP2006276949A patent/JP2008098311A/ja not_active Withdrawn
-
2007
- 2007-10-03 US US11/866,686 patent/US7463334B2/en not_active Expired - Fee Related
- 2007-10-08 KR KR1020070100816A patent/KR100882046B1/ko active IP Right Grant
- 2007-10-09 TW TW096137858A patent/TW200837805A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2008098311A (ja) | 2008-04-24 |
US7463334B2 (en) | 2008-12-09 |
US20080084547A1 (en) | 2008-04-10 |
KR100882046B1 (ko) | 2009-02-09 |
TW200837805A (en) | 2008-09-16 |
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