JP2008080230A - Apparatus and method of treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique capable of effectively acting microbubbles or nanobubbles with respect to a substrate in an apparatus and method for treating a substrate using a treatment liquid containing microbubbles or nanobubbles. <P>SOLUTION: A microbubble cleaning part 40 controls a flow rate of nitrogen gas injected into a force-fed cleaning liquid, so as to control the size of the microbubbles. This can supply the large amount of microbubbles of the optimal size according to the size of particles to be removed, thereby causing the microbubbles to act effectively on the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by supplying a processing liquid to various substrates such as a glass substrate for a liquid crystal display device, a glass substrate for a PDP, a semiconductor wafer, and a glass / ceramics substrate for a magnetic / optical disk. About.

  Conventionally, in a substrate manufacturing process, a substrate processing apparatus for processing a substrate by supplying a processing liquid to the surface of the substrate is known. In particular, in recent years, an attempt has been made to improve the processing effect on the substrate by supplying a treatment liquid containing microbubbles to the surface of the substrate. If a treatment liquid containing microbubbles is used, for example, particles adhering to the surface of the substrate can be efficiently removed.

  In the conventional substrate processing apparatus, for example, microbubbles are generated in the processing liquid using a microbubble generator having a gas-liquid mixing pump, a swirl accelerator, and a disperser or a microbubble generator having a gas dissolving unit. It was. Conventional substrate processing apparatuses using microbubbles are disclosed in, for example, Patent Documents 1 to 3.

JP 2004-121962 A JP 2005-93873 A JP 2006-179664 A

  However, the size of the microbubbles generated from the conventional microbubble generator has a substantially normal distribution centered on a predetermined diameter, and it is difficult to control the size. For this reason, it was not possible to supply a large amount of microbubbles of an optimal size according to the substrate to be processed. For example, when microbubbles are used in the substrate cleaning process, it is impossible to supply a large amount of microbubbles having an optimum size according to the size of particles to be removed. Therefore, in the conventional substrate processing apparatus, the microbubbles cannot always be effectively applied to the substrate.

  The present invention has been made in view of such circumstances, and in a substrate processing apparatus and a substrate processing method that use a processing liquid containing microbubbles or nanobubbles, the microbubbles or nanobubbles effectively act on the substrate. The purpose is to provide technology that can be used.

  In order to solve the above-mentioned problem, the invention according to claim 1 is a substrate processing apparatus for processing a substrate with a processing liquid containing microbubbles or nanobubbles, a bubble generating means for generating microbubbles or nanobubbles in the processing liquid, and processing It is characterized by comprising size adjusting means for adjusting the size of microbubbles or nanobubbles in the liquid, and processing liquid supply means for supplying a processing liquid containing microbubbles or nanobubbles to the substrate.

  According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, the processing liquid supply means includes a nozzle that discharges the processing liquid toward the substrate, and a pipe that pumps the processing liquid to the nozzle. The bubble generating means has gas injection means for injecting gas into the processing liquid in the pipe.

  According to a third aspect of the present invention, in the substrate processing apparatus of the second aspect, the nozzle discharges the processing liquid as a flat droplet toward the substrate.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to the second or third aspect, the size adjusting means includes a flow rate adjusting means for adjusting a flow rate of the gas injected by the gas injecting means. Features.

  The invention according to claim 5 is the substrate processing apparatus according to any one of claims 2 to 4, further comprising bubble number adjusting means for adjusting the number of microbubbles or nanobubbles in the processing liquid supplied to the substrate. It is further provided with the feature.

  According to a sixth aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the bubble number adjusting means includes a pressure adjusting means for adjusting the pressure of the processing liquid pumped in the pipe. .

  The invention according to claim 7 is the substrate processing apparatus according to any one of claims 2 to 6, wherein the processing liquid supply means is inserted at a position upstream of the gas injection means of the pipe. It is characterized by having a filtered filter.

  The invention according to claim 8 is a substrate processing method for processing a substrate with a processing liquid containing microbubbles or nanobubbles, a bubble generation step for generating microbubbles or nanobubbles in the processing liquid, and microbubbles or nanobubbles in the processing liquid. A size adjusting step for adjusting the size of the substrate and a processing liquid supply step for supplying a processing liquid containing microbubbles or nanobubbles to the substrate.

  According to the invention described in claims 1 to 7, the substrate processing apparatus includes a bubble generating means for generating microbubbles or nanobubbles in the processing liquid, and a size adjusting means for adjusting the size of the microbubbles or nanobubbles in the processing liquid. And a processing liquid supply means for supplying a processing liquid containing microbubbles or nanobubbles to the substrate. For this reason, microbubbles or nanobubbles can be effectively acted on the substrate to be processed.

  In particular, according to the second aspect of the present invention, the processing liquid supply means includes a nozzle that discharges the processing liquid toward the substrate, and a pipe that pumps the processing liquid to the nozzle. And a gas injection means for injecting gas into the processing liquid in the pipe. A part of the gas injected into the processing liquid dissolves in the processing liquid and is generated as micro-bubbles or nanobubbles due to a pressure drop when discharged from the nozzle. Further, the remaining gas injected into the processing liquid flows in the pipe in the form of bubbles and is sheared in the processing liquid being pumped into microbubbles or nanobubbles. For this reason, it is possible to generate microbubbles or nanobubbles with a simple configuration without using a large microbubble generator.

  In particular, according to the invention described in claim 3, the nozzle discharges the processing liquid as a flat droplet toward the substrate. Therefore, the cleaning liquid can be supplied to the surface of the substrate without any gap, and a predetermined physical impact can be given to the upper surface of the substrate.

  In particular, according to the invention described in claim 4, the size adjusting means has flow rate adjusting means for adjusting the flow rate of the gas injected by the gas injecting means. For this reason, the size of the microbubbles or nanobubbles supplied on the substrate can be easily controlled by adjusting the amount of the microbubbles or nanobubbles combined in the pipe.

  In particular, according to the invention described in claim 5, it further comprises bubble number adjusting means for adjusting the number of microbubbles or nanobubbles in the processing liquid supplied to the substrate. For this reason, microbubbles or nanobubbles can sufficiently act depending on the substrate to be processed.

  In particular, according to the sixth aspect of the present invention, the bubble number adjusting means has pressure adjusting means for adjusting the pressure of the processing liquid pumped in the pipe. For this reason, the number of microbubbles or nanobubbles in the processing liquid supplied to the substrate can be easily adjusted.

  In particular, according to the seventh aspect of the present invention, the processing liquid supply means has a filter inserted at a position upstream of the gas injection means of the pipe. For this reason, the foreign material in a processing liquid can be filtered and a clean processing liquid can be supplied. Moreover, since microbubbles or nanobubbles are generated downstream of the filter, the microbubbles or nanobubbles are not blocked by the filter, and the microbubbles or nanobubbles can be efficiently supplied to the substrate.

  According to the invention described in claim 8, the substrate processing method includes a bubble generation step for generating microbubbles or nanobubbles in the processing liquid, and a size adjustment step for adjusting the size of the microbubbles or nanobubbles in the processing liquid. And a treatment liquid supply step for supplying a treatment liquid containing microbubbles or nanobubbles to the substrate. For this reason, microbubbles or nanobubbles can be effectively acted on the substrate to be processed.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

<1. Overall Configuration of Substrate Processing System>
FIG. 1 is a schematic diagram showing the overall configuration of a substrate processing apparatus 1 according to the present invention. The substrate processing apparatus 1 is an apparatus for cleaning the surface of a square glass substrate (hereinafter simply referred to as “substrate”) 9 for a liquid crystal display device and removing foreign substances such as organic substances and particles adhering to the substrate 9. . As shown in FIG. 1, the substrate processing apparatus 1 mainly includes a UV processing unit 10, a brush processing unit 20, a replacement water washing unit 30, a microbubble cleaning processing unit 40, and a rinse processing unit 50. . Further, the substrate processing apparatus 1 includes a plurality of transport rollers 60 for transporting the substrate 9, and transports the substrate 9 in the direction of the arrow AR in the figure by rotating the transport rollers 60.

  The UV processing unit 10 is a processing unit for irradiating the upper surface of the substrate 9 with ultraviolet rays and decomposing organic substances adhering to the upper surface of the substrate 9. The UV processing unit 10 irradiates the upper surface of the substrate 9 on the transport roller 60 with ultraviolet rays having a wavelength of about 180 to 240 nm, for example. The organic matter adhering to the upper surface of the substrate 9 is decomposed by irradiation with ultraviolet rays, and is easily released from the upper surface of the substrate 9.

  The brush processing unit 20 is a processing unit for releasing the decomposition product decomposed in the UV processing unit 10 from the upper surface of the substrate 9. The brush processing unit 20 supplies the cleaning liquid to the upper surface of the substrate 9 and causes the brush to come into sliding contact so that the decomposition product is sufficiently released from the upper surface of the substrate 9. In addition, the cleaning liquid supplied onto the substrate 9 may be a chemical liquid having a high cleaning capability, or pure water.

  The replacement water washing unit 30 is a processing unit for washing away the cleaning liquid and decomposition products remaining on the substrate 9. The replacement water washing unit 30 has a nozzle (not shown) connected to a pure water supply source, and the pure water is discharged from the nozzle onto the upper surface of the substrate 9 to wash away the cleaning liquid and decomposition products on the substrate 9. . As a result, the surface of the substrate 9 is replaced from the state covered with the cleaning liquid to the state covered with pure water.

  The microbubble cleaning processing unit 40 is a processing unit for removing fine particles (for example, particles of about 0.1 μm to several μm) attached to the upper surface of the substrate 9 with a cleaning liquid containing microbubbles. The microbubble cleaning processing unit 40 discharges a cleaning liquid containing microbubbles which are 70 μm or less microbubbles from a predetermined nozzle, and rinses and removes microparticles adhering to the substrate 9. The detailed configuration of the microbubble cleaning processing unit 40 will be described later.

  The rinse treatment unit 50 is a treatment unit for washing away the cleaning liquid remaining on the upper surface of the substrate 9. The rinse treatment unit 50 has a nozzle (not shown) connected to a pure water supply source, and the pure liquid is discharged from the nozzle onto the upper surface of the substrate 9 to wash away the cleaning liquid on the substrate 9. As a result, the surface of the substrate 9 is covered with pure water.

  When processing the substrate 9 in such a substrate processing apparatus 1, the UV processing unit 10, the brush processing unit 20, the replacement water cleaning unit 30, and the microbubble cleaning processing unit 40 are operated while the transport roller 60 is operated to transport the substrate 9. The above-described processes in the rinse processing unit 50 are sequentially performed on the substrate 9.

<2. Micro Bubble Cleaning Processing Unit>
FIG. 2 is a diagram showing a detailed configuration of the microbubble cleaning processing unit 40 described above. As shown in FIG. 2, the microbubble cleaning processing unit 40 includes a spray nozzle 41 disposed above the transport roller 60 and a cleaning liquid supply unit 42 that supplies a cleaning liquid to the spray nozzle 41.

  The spray nozzle 41 has a columnar outer shape extending in a horizontal direction orthogonal to the transport direction of the substrate 9. A cavity for storing the cleaning liquid is formed inside the spray nozzle 41, and a plurality of discharge holes 41a for discharging the cleaning liquid are formed below the spray nozzle 41. For this reason, the cleaning liquid supplied from the cleaning liquid supply unit 42 passes through the cavity in the spray nozzle 41 and is discharged from the plurality of discharge holes 41 a onto the upper surface of the substrate 9.

  FIG. 3 is a perspective view partially showing a state of ejection by the spray nozzle 41. As shown in FIG. 3, each discharge hole 41 a of the spray nozzle 41 diffuses the cleaning liquid in a direction orthogonal to the traveling direction of the substrate 9 (the direction of the arrow AR), and discharges the cleaning liquid as planar droplets. For this reason, the cleaning liquid is supplied to the upper surface of the substrate 9 without any gap. Moreover, a predetermined physical impact is given to the upper surface of the substrate 9 by supplying the cleaning liquid.

  Returning to FIG. 2, the cleaning liquid supply unit 42 includes piping 42a to 42c, a cleaning liquid supply source 42d, a pump 42e, a filter 42f, a valve 42g, a three-way branch pipe 42h, a nitrogen gas supply source 42i, a pressure increasing valve 42j, a pressure increasing gas tank 42k, It has a valve 42l, a flow meter 42m, and an injection part 42n. The pump 42e, the valve 42g, the pressure increasing valve 42j, and the valve 42l are electrically connected to a control unit 43 configured by a computer, and operate according to a command from the control unit 43. The flow meter 42m and the control unit 43 are also electrically connected, and the measurement result of the flow meter 42m is transferred to the control unit 43.

  The pipe 42a connects between the cleaning liquid supply source 42d and the first port of the three-way branch pipe 42h, and a pump 42e, a filter 42f, and a valve 42g are interposed in the path of the pipe 42a. For this reason, when the valve 42g is opened and the pump 42e is operated, the cleaning liquid is supplied from the cleaning liquid supply source 42d into the pipe 42a, and the cleaning liquid is introduced into the first port of the three-way branch pipe 42h via the filter 42f. Is done. The cleaning liquid may be a chemical liquid with high cleaning ability such as aqueous ammonia, SC1 liquid, neutral detergent, alkaline detergent, or pure water.

  A high pressure pump is used as the pump 42e. For this reason, the cleaning liquid supplied from the cleaning liquid supply source 42d is pumped downstream at a high pressure. Further, an opening adjustment valve is used as the valve 42g. The valve 42g adjusts the opening of the valve 42g to adjust the flow rate of the cleaning liquid, and supplies the cleaning liquid to the downstream side while adjusting the pressure of the cleaning liquid.

  The pipe 42b connects between the nitrogen gas supply source 42i and the second port of the three-way branch pipe 42h. A pressure increasing valve 42j, a pressure increasing gas tank 42k, a valve 42l, and a flow meter are provided along the path of the pipe 42b. 42m is inserted. Nitrogen gas supplied from the nitrogen gas supply source 42i is pressurized by the pressure increasing valve 42j and filled in the pressure increasing gas tank 42k. For this reason, when the valve 42l is opened, high-pressure nitrogen gas filled in the pressurized gas tank 42k is introduced into the second port of the three-way branch pipe 42h via the flow meter 42m.

  The pipe 42b is connected to the second port of the three-way branch pipe 42h via the injection part 42n. FIG. 4 is a diagram showing a connection configuration between the three-way branch pipe 42h and the injection part 42n. As shown in FIG. 4, the injection part 42n is inserted into the three-way branch pipe 42h, and a small hole 42o for discharging nitrogen gas is formed in the vicinity of the tip of the injection part 42n. Yes. For this reason, the nitrogen gas supplied from the pipe 42b to the injection part 42n is discharged into the cleaning liquid in the three-way branch pipe 42h through the small hole 42o of the injection part 42n.

  The injecting portion 42n is made of stainless steel such as SUS, and the small hole 42o has an opening diameter of about 0.5 mm, for example. Moreover, the injection part 42n is attached so that the small hole 42o may be arrange | positioned near the center of the pipe line of the three-way branch pipe 42h. Therefore, the nitrogen gas bubbles are directly injected near the center of the three-way branch pipe 42h and supplied without being unevenly distributed in the pipe.

  An opening adjustment valve is used as the valve 42l. The control unit 43 adjusts the opening of the valve 42l based on the measurement value of the flow meter 42m, and supplies nitrogen gas to the injection unit 42n while adjusting the pressure and flow rate of the nitrogen gas. In the three-way branch pipe 42h, the pressure of nitrogen gas is adjusted to be slightly higher than the pressure of the cleaning liquid. For this reason, the cleaning liquid in the three-way branch pipe 42h does not enter the injection part 42n, and the nitrogen gas is favorably discharged into the three-way branch pipe 42h. Part of the nitrogen gas discharged into the cleaning liquid is dissolved under pressure in the cleaning liquid, and the other nitrogen gas is supplied downstream in the form of bubbles.

  The pipe 42c connects the third port of the three-way branch pipe 42h and the spray nozzle 41. For this reason, the cleaning liquid and the nitrogen gas introduced into the three-way branch pipe 42 h are supplied to the spray nozzle 41 through the pipe 42 c and discharged from the discharge hole 41 a of the spray nozzle 41. Nitrogen gas dissolved in the cleaning liquid becomes supersaturated due to release of pressure when discharged from the discharge hole 41a, and is generated as minute microbubbles in the cleaning liquid.

  On the other hand, the nitrogen gas bubbles that did not dissolve in the cleaning liquid are finely sheared in the pressure-feeding cleaning liquid while flowing in the pipe 42c, and become a large number of microbubbles. And the microbubble produced | generated by shearing is also discharged with the washing | cleaning liquid from the discharge hole 41a of the spray nozzle 41. FIG. As described above, in the cleaning liquid supplied to the upper surface of the substrate 9, microbubbles generated by shearing in the middle of the flow path of the pipe 42 c and microbubbles generated by supersaturation when discharged from the spray nozzle 41 are included. Is included.

  FIG. 5 is a graph showing the distribution of microbubble sizes in the cleaning liquid supplied onto the substrate 9. As shown in FIG. 5, the size of the microbubbles has a substantially normal distribution centered on a certain diameter. When the opening of the valve 42g is adjusted to increase the flow rate of the cleaning liquid, the number of microbubbles supplied increases as indicated by the arrow 71 in FIG. Conversely, when the flow rate of the cleaning liquid is reduced by adjusting the opening of the valve 42g, the number of microbubbles supplied is also reduced as indicated by the arrow 72 in FIG. That is, the microbubble cleaning processing unit 40 can adjust the number of microbubbles supplied by adjusting the flow rate of the cleaning liquid.

  Further, when the flow rate of the nitrogen gas is increased by adjusting the opening of the valve 42l, the nitrogen gas remaining in the state of bubbles in the cleaning liquid increases. For this reason, microbubbles generated by shearing in the middle of the flow path of the pipe 42c increase, and the number of slightly larger microbubbles generated by combining the microbubbles increases. Therefore, as indicated by an arrow 73 in FIG. 5, the size of the microbubble shifts to the large diameter side. Conversely, when the flow rate of the nitrogen gas is decreased by adjusting the opening of the valve 42l, the nitrogen gas remaining in the state of bubbles in the cleaning liquid is decreased. For this reason, micro bubbles generated by shearing in the middle of the flow path of the pipe 42c are reduced, and the number of slightly larger micro bubbles generated by combining the micro bubbles is reduced. Therefore, as indicated by an arrow 74 in FIG. 5, the size of the microbubble shifts to the small diameter side. That is, the microbubble cleaning processing unit 40 can adjust the size of the microbubbles by adjusting the flow rate of the nitrogen gas.

  The cleaning liquid discharged from the spray nozzle 41 collides with the substrate 9 and gives a physical impact to the upper surface of the substrate 9. Further, the microbubbles in the cleaning liquid supplied to the upper surface of the substrate 9 are gradually reduced on the upper surface of the substrate 9, and a part thereof disappears (so-called “collapse”). When the microbubbles are crushed, the inside of the microbubbles is adiabatically compressed, and the microbubbles disappear as microscopic regions (so-called “hot spots”) at high temperatures (for example, several thousand degrees Celsius) and high pressure (for example, several thousand atmospheres). For this reason, the energy emitted from the hot spot acts on the upper surface of the substrate 9, and particles adhering to the upper surface of the substrate 9 are released from the substrate 9.

  Thus, the physical impact caused by the collision of the cleaning liquid and the energy emitted by the crushing of the microbubbles act on the upper surface of the substrate 9, and the particles are released from the upper surface of the substrate 9 by these effects. In particular, the physical impact caused by the collision of the cleaning liquid mainly acts on the large-sized particles, whereas the energy emitted by the collapse of the microbubbles mainly acts on the small-sized particles, and each particle is applied to the upper surface of the substrate 9. Free from.

  Microbubbles have the property of adsorbing particles. For this reason, the particles released from the substrate 9 are adsorbed by the microbubbles that are not crushed. Since the size of each bubble is minute, the microbubble has a large surface area (area of gas-liquid interface) as a whole. For this reason, the particles floating in the cleaning liquid are efficiently adsorbed. Moreover, since microbubbles have charging properties, particles are attracted and attracted efficiently by electrostatic action. Thus, the microbubble which adsorb | sucked the particle is discharged | emitted outside the board | substrate 9 with a washing | cleaning liquid.

  As described above, the microbubble cleaning processing unit 40 supplies the cleaning liquid containing microbubbles to the upper surface of the substrate 9, thereby releasing the particles from the upper surface of the substrate 9, and releasing the released particles together with the microbubbles to the substrate 9. To the outside. Therefore, particles adhering to the substrate 9 can be efficiently removed. Moreover, since the cleaning effect of microbubbles is used, the chemical concentration in the cleaning liquid can be reduced, and the burden on wastewater treatment and the environment can be reduced.

  Further, as described above, the microbubble cleaning processing unit 40 can adjust the size of the microbubbles contained in the cleaning liquid. For this reason, it is possible to supply a large amount of microbubbles of an optimal size according to the size of the particles to be removed. For example, the size of microbubbles should be set larger for processes with many large particles, and the size of microbubbles should be set smaller for processes where small particles should be removed. Is possible.

  In addition, the microbubble cleaning processing unit 40 of the present embodiment generates microbubbles in the pipe 42c and at the time of discharge by injecting nitrogen gas into the pumped cleaning liquid using the injection unit 42n. For this reason, a microbubble can be generated with a simple configuration without using a conventionally used large-sized microbubble generator.

  In addition, the microbubble cleaning processing unit 40 of the present embodiment has a simple configuration and a cleaning capability compared to a “two-fluid nozzle” that has been conventionally used as a mechanism for supplying a fluid including gas and liquid to a substrate. High fluid can be supplied. That is, the two-fluid nozzle has a complicated and expensive configuration for mixing and discharging liquid and gas, and the spray nozzle 41 of the present embodiment has a simple configuration that only discharges the cleaning liquid from the discharge hole 41a. can do. In addition, the microbubble cleaning processing unit 40 according to the present embodiment generates a sufficient amount of microbubbles when using about 1/2000 gas (nitrogen gas in the above embodiment) of the conventional two-fluid nozzle. Therefore, gas consumption can be reduced.

  In the above microbubble cleaning processing unit, nitrogen gas is injected into the cleaning liquid downstream of the filter 42f. For this reason, the microbubble generated in the pipe 42c reaches the nozzle 41 without being blocked by the filter 42f. Therefore, the microbubbles generated in the pipe 42c can be efficiently supplied to the substrate 9.

<3. Modification>
As mentioned above, although one Embodiment of this invention was described, this invention is not limited to said example. For example, the above-described microbubble cleaning processing unit 40 supplies the cleaning liquid to the upper surface of the substrate 9, but may supply the cleaning liquid to the lower surface side of the substrate 9, or may be both surfaces of the substrate 9. A cleaning liquid may be supplied.

  In the above example, microbubbles of nitrogen gas are generated, but the gas constituting the microbubbles may be a gas other than nitrogen gas. However, if an inert gas such as nitrogen gas or argon gas is used, chemical effects such as surface oxidation on the substrate 9 can be eliminated.

  In the above example, the case where microbubbles of 70 μm or less are generated as the size that causes the collapse phenomenon, but the microbubbles generated in the present invention is not limited to so-called microbubbles, Furthermore, it may be a fine nanobubble. Since nanobubbles are ultrafine bubbles having a diameter of less than 1 μm, higher energy can be obtained by crushing, and particles in the cleaning liquid can be adsorbed and removed more efficiently.

  Further, in the above example, the case where micro bubbles are used for the particle removal processing after organic substance removal has been described. However, the cleaning liquid supply unit 42 equivalent to the above is applied to the brush processing unit 20 and the replacement water washing unit 30 to obtain micro bubbles. It is good also as a structure which supplies the washing | cleaning liquid containing. Moreover, it is good also as a structure which applies the process liquid supply part equivalent to said washing | cleaning liquid supply part 42 to the processing apparatus which performs processes other than washing | cleaning, and supplies the process liquid containing a microbubble.

  In the above example, the case where the rectangular glass substrate 9 for a liquid crystal display device is the target of processing has been described. However, the present invention includes a glass substrate for a PDP, a semiconductor wafer, a glass / ceramics substrate for a magnetic / optical disk, Other substrates may be processed.

It is the schematic which showed the whole structure of the substrate processing apparatus which concerns on this invention. It is the figure which showed the detailed structure of the microbubble washing process part. It is the perspective view which showed partially the mode of discharge by a spray nozzle. It is the figure which showed the connection structure of a three-way branch pipe and an injection part. It is the graph which showed distribution of the size of the microbubble supplied on a substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 UV processing part 20 Brush processing part 30 Replacement water washing part 40 Micro bubble washing process part 41 Spray nozzle 41a Discharge port 42 Cleaning liquid supply part 42a-42c Piping 42d Cleaning liquid supply source 42e Pump 42f Filter 42g Valve 42h Three-way branch pipe 42i Nitrogen gas supply source 42j Booster valve 42k Booster gas tank 42l Valve 42m Flow meter 42n Injecting part 43 Control part 50 Rinse processing part 60 Conveying roller 9 Substrate

Claims (8)

In a substrate processing apparatus for processing a substrate with a processing liquid containing microbubbles or nanobubbles,
Bubble generating means for generating microbubbles or nanobubbles in the treatment liquid;
A size adjusting means for adjusting the size of microbubbles or nanobubbles in the treatment liquid;
A substrate processing apparatus comprising: a processing liquid supply unit that supplies a processing liquid containing microbubbles or nanobubbles to the substrate. The substrate processing apparatus according to claim 1,
The processing liquid supply means has a nozzle that discharges the processing liquid toward the substrate, and a pipe for pumping the processing liquid to the nozzle.
The said bubble generation means has a gas injection | pouring means which inject | pours gas in the process liquid in the said piping, The substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 2,
The said nozzle discharges a process liquid as a planar droplet toward a board | substrate, The substrate processing apparatus characterized by the above-mentioned. In the substrate processing apparatus of Claim 2 or Claim 3,
The substrate processing apparatus, wherein the size adjusting means includes a flow rate adjusting means for adjusting a flow rate of the gas injected by the gas injection means. In the substrate processing apparatus according to any one of claims 2 to 4,
A substrate processing apparatus, further comprising bubble number adjusting means for adjusting the number of microbubbles or nanobubbles in the processing liquid supplied to the substrate. The substrate processing apparatus according to claim 5,
The substrate processing apparatus, wherein the bubble number adjusting means includes pressure adjusting means for adjusting the pressure of the processing liquid pumped in the pipe. In the substrate processing apparatus according to any one of claims 2 to 6,
The substrate processing apparatus, wherein the processing liquid supply means includes a filter interposed at a position upstream of the gas injection means of the pipe. In a substrate processing method for processing a substrate with a processing liquid containing microbubbles or nanobubbles,
A bubble generating step for generating microbubbles or nanobubbles in the treatment liquid;
A size adjustment step for adjusting the size of the microbubbles or nanobubbles in the treatment liquid;
And a processing liquid supply step of supplying a processing liquid containing microbubbles or nanobubbles to the substrate.

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