JP5656245B2 - Cleaning method and cleaning device - Google Patents

Cleaning method and cleaning device Download PDF

Info

Publication number
JP5656245B2
JP5656245B2 JP2010137886A JP2010137886A JP5656245B2 JP 5656245 B2 JP5656245 B2 JP 5656245B2 JP 2010137886 A JP2010137886 A JP 2010137886A JP 2010137886 A JP2010137886 A JP 2010137886A JP 5656245 B2 JP5656245 B2 JP 5656245B2
Authority
JP
Japan
Prior art keywords
cleaning
cleaned
bubbles
liquid
treatment liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010137886A
Other languages
Japanese (ja)
Other versions
JP2012004331A (en
Inventor
廣瀬　治道
治道 廣瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2010137886A priority Critical patent/JP5656245B2/en
Priority to TW100113680A priority patent/TWI484541B/en
Priority to TW104108290A priority patent/TW201523713A/en
Priority to CN201410408810.0A priority patent/CN104307780A/en
Priority to CN201110138689.0A priority patent/CN102284447B/en
Priority to KR1020110057494A priority patent/KR101271302B1/en
Publication of JP2012004331A publication Critical patent/JP2012004331A/en
Application granted granted Critical
Publication of JP5656245B2 publication Critical patent/JP5656245B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/003—Cleaning involving contact with foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Description

本発明は、半導体基板等の被洗浄物に処理液をかけて当該被洗浄物を洗浄する洗浄方法及び洗浄装置に関する。   The present invention relates to a cleaning method and a cleaning apparatus for cleaning an object to be cleaned by applying a treatment liquid to the object to be cleaned such as a semiconductor substrate.

従来、半導体ウェーハ等の板状基板の表面に微細バブルを含有する処理液をかけて当該基板を洗浄する基板処理装置（基板処理方法）が提案されている（特許文献１及び特許文献２参照）。特許文献１に開示される基板処理装置では、マイクロバブルを含むマイクロバブル水（処理液）を基板表面に吹き付けて当該基板表面を洗浄している。このような基板処理装置では、マイクロバブル水に含まれるマイクロバブル（微細バブル）の物理的衝撃、発散エネルギー、電気的吸着性等の性質を利用して基板表面をより良好に洗浄することができるようになる。   Conventionally, a substrate processing apparatus (substrate processing method) has been proposed in which a processing liquid containing fine bubbles is applied to the surface of a plate-shaped substrate such as a semiconductor wafer to clean the substrate (see Patent Document 1 and Patent Document 2). . In the substrate processing apparatus disclosed in Patent Document 1, microbubble water (processing liquid) containing microbubbles is sprayed on the substrate surface to clean the substrate surface. In such a substrate processing apparatus, the surface of the substrate can be more satisfactorily cleaned by utilizing properties such as physical impact, diverging energy, and electroadsorption property of microbubbles (fine bubbles) contained in microbubble water. It becomes like this.

また、特許文献２に開示される基板処理装置では、更に、基板から除去すべきパーティクルの大きさに応じてマクロバブル水に含まれるマイクロバブル（微細バブル）の大きさを調整することができるようになっている。このような基板処理装置によれば、サイズの大きいパーティクルが多い工程ではマイクロバブルのサイズを大きめに設定し、一方、サイズの小さいパーティクルが多い工程ではマイクロバブルのサイズを小さめに設定することができる。   Moreover, in the substrate processing apparatus disclosed in Patent Document 2, the size of microbubbles (fine bubbles) contained in the macrobubble water can be adjusted according to the size of particles to be removed from the substrate. It has become. According to such a substrate processing apparatus, the size of the microbubble can be set larger in the process with many large particles, while the size of the microbubble can be set smaller in the process with many small particles. .

特開２００８−９３５７７号公報JP 2008-93577 A 特開２００８−８０２３０号公報JP 2008-80230 A

ところで、特許文献１や特許文献２に記載されるようなマイクロバブル水（処理液）に含まれるマイクロバブル（微細バブル）の物理的衝撃、発散エネルギー、電気的吸着性等の洗浄に有効な複数の性質は、微細バブルであれば一律同程度に発揮され得るものではない。あるサイズの微細バブルの、例えば、物理的衝撃については特に良好であるものの、他の性質、例えば、電気吸着性については特に良好であるというものではなかったり、他のサイズの微細バブルの、逆に、例えば、電気吸着性については特に良好であるものの、他の性質、例えば、物理的衝撃については特に良好であるというものではなかったりする。   By the way, a plurality of effective microbubbles (fine bubbles) contained in microbubble water (treatment liquid) as described in Patent Document 1 and Patent Document 2 are effective for cleaning such as physical impact, divergence energy, and electroadsorption. These properties cannot be exhibited to the same extent if they are fine bubbles. Some sizes of microbubbles, for example, are particularly good for physical impact, but other properties, for example, electroadsorption, are not particularly good, or the reverse of other sizes of microbubbles. In addition, for example, the electroadsorption property is particularly good, but other properties such as physical impact are not particularly good.

しかしながら、特許文献１や特許文献２に開示される基板処理装置では、マイクロバブル水（処理液）に含まれるマイクロバブルのサイズを調整する機能を有するものではあるが、あるサイズのパーティクルの除去を目的とした洗浄においては、マイクロバブルのサイズが決められてしまうので、その決められたサイズのマイクロバブルのある性質については特に良好であるものの、そのサイズのマイクロバブルの他の性質については特に良好であるとは限らない。   However, the substrate processing apparatuses disclosed in Patent Document 1 and Patent Document 2 have a function of adjusting the size of the microbubbles contained in the microbubble water (processing liquid). In the intended cleaning, the size of the microbubbles is determined, so that certain properties of the microbubbles of the determined size are particularly good, but other properties of the microbubbles of that size are particularly good Not necessarily.

このように、従来の基板処理装置（洗浄装置）では、微細バブルの洗浄に好ましい多くの性質を有効に利用することが必ずしもできていない。   As described above, the conventional substrate processing apparatus (cleaning apparatus) cannot always effectively use many properties preferable for cleaning fine bubbles.

本発明は、このような事情に鑑みてなされたもので、微細バブルの洗浄に有効なより多くの性質を利用しつつ効果的な洗浄を可能にする洗浄方法及び洗浄装置を提供するものである。   The present invention has been made in view of such circumstances, and provides a cleaning method and a cleaning apparatus that enable effective cleaning while utilizing more properties effective for cleaning fine bubbles. .

本発明に係る洗浄方法は、
処理液をかけて被洗浄物を洗浄する洗浄方法であって、
バブルを含む第１処理液を前記被洗浄物にかける第１ステップと、
該第１ステップの後に、前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記第１処理液が付着した状態の前記被洗浄物にかける第２ステップを有し、
前記第１処理液に含まれるバブルの気体と前記第２処理液に含まれるバブルの気体とが異なることを特徴とする構成となる。 The cleaning method according to the present invention includes:
A cleaning method for cleaning an object to be cleaned by applying a treatment liquid,
A first step of applying a first treatment liquid containing bubbles to the object to be cleaned;
After the first step, it has a second step of applying a second treatment solution containing the large size of the bubbles from the bubble contained in the first treatment liquid to the object to be cleaned in a state where the first processing solution is attached ,
The bubble gas contained in the first treatment liquid is different from the bubble gas contained in the second treatment liquid .

このような構成により、被洗浄物に対して、バブルを含む第１処理液での洗浄の後に、該第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液での洗浄がなされるので、比較的小さいバブルの特に洗浄に有効な性質を利用した第１処理液による洗浄の後に、比較的大きいバブルの特に良好な性質を利用した第２処理液による洗浄を行うことができ、さらに、このような構成によれば、第１処理液に含まれるバブルの気体と第２処理液に含まれるバブルの気体とから異なる洗浄に係る効果を期待することができる。 With such a configuration, after the object to be cleaned is cleaned with the first processing liquid containing bubbles, cleaning with the second processing liquid containing bubbles larger in size than the bubbles included in the first processing liquid is performed. As a result, cleaning with the second processing liquid using particularly good properties of relatively large bubbles can be performed after cleaning with the first processing liquid using properties particularly effective for cleaning relatively small bubbles. Furthermore, according to such a configuration, it is possible to expect an effect relating to cleaning different from the bubble gas contained in the first treatment liquid and the bubble gas contained in the second treatment liquid.

例えば、第１処理液に含まれるバブルをマイクロナノバブルやナノバブルのような極めて小さいサイズのバブルにすると、その極めて小さいバブルが圧壊（消滅）する際に生じるラジカル反応によって被洗浄物表面から有機残渣を有効に除去することができる（極めて小さいバブルの洗浄に有効な性質）とともに、極めて小さいバブルが負電位に帯電するので、パーティクルの表面に付着するその極めて小さいバブルの電位反発により当該パーティクルを被洗浄物から分離させることができる（極めて小さいバブルの洗浄に有効な性質）。そして、第２処理液に含まれるバブルをマイクロバブル等の前記マイクロナノバブルやナノバブルより大きいサイズのバブルにすると、前述したように、被洗浄物表面から分離されたパーティクルに付着するその比較的大きいバブルによって、そのパーティクルを処理液表面まで比較的早く浮上させることができるようになる（比較的大きいバブルの洗浄に有効な性質）。   For example, if the bubbles contained in the first treatment liquid are made into extremely small size bubbles such as micro-nano bubbles and nano bubbles, organic residues are removed from the surface of the object to be cleaned by radical reaction that occurs when the extremely small bubbles are crushed (disappeared). It can be effectively removed (effective property for cleaning very small bubbles), and extremely small bubbles are charged to a negative potential, so that the particles are cleaned by the potential repulsion of the very small bubbles adhering to the particle surface. Can be separated from the material (property useful for cleaning very small bubbles). Then, when the bubbles contained in the second treatment liquid are made larger than the micro-nano bubbles such as micro-bubbles or the bubbles larger than the nano-bubbles, as described above, the relatively large bubbles that adhere to the particles separated from the surface of the object to be cleaned. This makes it possible to float the particles to the surface of the processing liquid relatively quickly (property effective for cleaning relatively large bubbles).

本発明に係る洗浄方法は、
処理液をかけて被洗浄物を洗浄する洗浄方法であって、
バブルを含む第１処理液を前記被洗浄物にかける第１ステップと、
該第１ステップの後に、前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記第１処理液が付着した状態の前記被洗浄物にかける第２ステップを有し、
前記第２ステップの後であって、前記被洗浄物を乾燥させる直前にバブルを含む第３処理液を当該被洗浄物にかける第３ステップを有することを特徴とする洗浄方法である。 The cleaning method according to the present invention includes:
A cleaning method for cleaning an object to be cleaned by applying a treatment liquid,
A first step of applying a first treatment liquid containing bubbles to the object to be cleaned;
After the first step, there is a second step in which a second treatment liquid containing bubbles larger in size than bubbles contained in the first treatment liquid is applied to the object to be cleaned with the first treatment liquid attached thereto. ,
A cleaning method comprising a third step of applying a third treatment liquid containing bubbles to the object to be cleaned immediately after drying the object to be cleaned, after the second step .

本発明に係る洗浄装置は、
被洗浄物に処理液をかけて洗浄する洗浄装置であって、
バブルを含む第１処理液を前記被洗浄物にかける第１洗浄機構と、
前記第１洗浄機構によりかけられた第１処理液が付着した状態の前記被洗浄物に前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記被洗浄物にかける第２洗浄機構とを有し、
前記第１処理液に含まれるバブルの気体と前記第２処理液に含まれるバブルの気体とが異なることを特徴とする構成となる。 The cleaning apparatus according to the present invention includes:
A cleaning device that cleans an object to be cleaned by applying a treatment liquid,
A first cleaning mechanism for applying a first processing liquid containing bubbles to the object to be cleaned;
A second processing liquid containing bubbles larger in size than bubbles contained in the first processing liquid is applied to the object to be cleaned with the first processing liquid applied by the first cleaning mechanism attached thereto. have a second cleaning mechanism,
The bubble gas contained in the first treatment liquid is different from the bubble gas contained in the second treatment liquid .

このような構成により、被洗浄物に対して、第１洗浄機構によるバブルを含む第１処理液での洗浄の後に、第２洗浄機構により前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液での洗浄がなされるので、比較的小さいバブルの好ましい性質を利用した第１処理液による洗浄の後に、比較的大きいバブルの好ましい性質を利用した第２処理液による洗浄を行うことができ、さらに、このような構成によれば、第１処理液に含まれるバブルの気体と第２処理液に含まれるバブルの気体とから異なる洗浄に係る効果を期待することができる。 With such a configuration, after the object to be cleaned is cleaned with the first processing liquid containing bubbles by the first cleaning mechanism, the bubbles having a size larger than the bubbles included in the first processing liquid by the second cleaning mechanism. Therefore, after cleaning with the first processing liquid using the preferable properties of relatively small bubbles, cleaning with the second processing liquid using the preferable properties of relatively large bubbles is performed. Further, according to such a configuration, it is possible to expect an effect related to cleaning different from the bubble gas contained in the first treatment liquid and the bubble gas contained in the second treatment liquid .

本発明の洗浄装置は、
被洗浄物に処理液をかけて洗浄する洗浄装置であって、
バブルを含む第１処理液を前記被洗浄物にかける第１洗浄機構と、
前記第１洗浄機構によりかけられた第１処理液が付着した状態の前記被洗浄物に前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記被洗浄物にかける第２洗浄機構とを有し、
前記第２洗浄機構から前記第２処理液がかけられた前記被洗浄物を乾燥させる直前にバブルを含む第３処理液を当該被洗浄物にかける乾燥前処理機構を有することを特徴とする構成となる。 The cleaning device of the present invention comprises:
A cleaning device that cleans an object to be cleaned by applying a treatment liquid,
A first cleaning mechanism for applying a first processing liquid containing bubbles to the object to be cleaned;
A second processing liquid containing bubbles larger in size than bubbles contained in the first processing liquid is applied to the object to be cleaned with the first processing liquid applied by the first cleaning mechanism attached thereto. A second cleaning mechanism,
It has a pre-drying mechanism for applying a third processing liquid containing bubbles to the object to be cleaned immediately before drying the object to which the second processing liquid is applied from the second cleaning mechanism. It becomes .

本発明に係る洗浄方法及び洗浄装置によれば、被洗浄物に対して、比較的小さいバブルの好ましい性質を利用した第１処理液による洗浄の後に、比較的大きいバブルの好ましい性質を利用した第２処理液による洗浄を行うことができるので、比較的小さいバブルの洗浄に好ましい性質、次いで、比較的大きいバブルの洗浄に好ましい性質を順次利用しつつ当該被洗浄物を洗浄することができる。従って、微細バブルの好ましいより多くの性質を有効に利用しつつ被洗浄物の効果的な洗浄が可能になる。   According to the cleaning method and the cleaning apparatus of the present invention, the object to be cleaned is washed with the first treatment liquid using the preferable properties of relatively small bubbles, and then the first property using the preferable properties of relatively large bubbles is used. Since the cleaning with the two treatment liquids can be performed, the object to be cleaned can be cleaned while sequentially using the properties preferable for cleaning relatively small bubbles and then the properties preferable for cleaning relatively large bubbles. Therefore, it is possible to effectively clean the object to be cleaned while effectively utilizing more desirable properties of the fine bubbles.

本発明の第１の実施の形態に係る洗浄装置を模式的に示す図である。It is a figure which shows typically the washing | cleaning apparatus which concerns on the 1st Embodiment of this invention. 図１に示す洗浄装置においてなされる半導体ウェーハ基板（被洗浄物）の洗浄手順を示すフローチャートである。It is a flowchart which shows the washing | cleaning procedure of the semiconductor wafer board | substrate (to-be-cleaned object) made in the washing | cleaning apparatus shown in FIG.

以下、本発明の実施の形態について図面を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

本発明の実施の形態に係る洗浄装置は、図１に示すように構成される。この洗浄装置は、半導体基板（被洗浄物）に処理液をかけて当該半導体基板を洗浄するものである。   The cleaning apparatus according to the embodiment of the present invention is configured as shown in FIG. In this cleaning apparatus, a semiconductor substrate (object to be cleaned) is applied with a treatment liquid to clean the semiconductor substrate.

図１において、この洗浄装置１００は搬送機構１０を有する。搬送機構１０は、その搬送方向（矢印参照）に順次所定間隔で配列されたローラ（搬送経路）を有しており、被洗浄物となる半導体基板（以下、単に基板という）Ｗが回転するローラ上を順次移動しつつ搬送されるようになっている。搬送機構１０の順次配列されるローラに対向して、その搬送方向の上流側から順次、洗浄ノズル２０、二流体ノズル３０、アクアナイフ４０、洗浄ノズル５０、乾燥前ノズル６０及びエアナイフ７０が配置されている。   In FIG. 1, the cleaning device 100 includes a transport mechanism 10. The transport mechanism 10 has rollers (transport paths) that are sequentially arranged at predetermined intervals in the transport direction (see arrows), and a roller on which a semiconductor substrate W (hereinafter simply referred to as a substrate) W to be cleaned rotates. It is transported while sequentially moving on the top. The cleaning nozzle 20, the two-fluid nozzle 30, the aqua knife 40, the cleaning nozzle 50, the pre-drying nozzle 60, and the air knife 70 are arranged sequentially from the upstream side in the transport direction so as to face the rollers arranged in sequence in the transport mechanism 10. ing.

洗浄装置１００は、リンス液供給機構２１、５１、Ｏ2溶存液生成機構３２、エア溶存液生成機構４２、６２、酸素ガスボンベ３１、エアボンベ４１、６１、及び純水の貯められたタンク８０を有している。リンス液供給機構２１は、タンク８０からの純水をリンス液として送通管２２を通して洗浄ノズル２０に供給する。また、リンス液供給機構５１も、同様に、タンク８０からの純水をリンス液として送通管５２を通して洗浄ノズル５０に供給する。これら洗浄ノズル２０、５０は、供給されるリンス液（純水）を噴出する。 The cleaning apparatus 100 includes rinse liquid supply mechanisms 21 and 51, an O 2 dissolved liquid generation mechanism 32, an air dissolved liquid generation mechanism 42 and 62, an oxygen gas cylinder 31, air cylinders 41 and 61, and a tank 80 in which pure water is stored. doing. The rinsing liquid supply mechanism 21 supplies pure water from the tank 80 to the cleaning nozzle 20 through the transmission pipe 22 as a rinsing liquid. Similarly, the rinsing liquid supply mechanism 51 supplies pure water from the tank 80 to the cleaning nozzle 50 through the transmission pipe 52 as a rinsing liquid. These washing nozzles 20 and 50 eject the supplied rinse liquid (pure water).

Ｏ2溶存液生成機構３２は、タンク８０から供給される純水と酸素ボンベ３１から供給される酸素ガスとを混合し、高圧力下でその酸素ガスを純水中に溶解させて、過飽和状態あるいはそれに近い状態となる酸素溶存液を生成する。Ｏ2溶存液生成機構３２は、生成した酸素溶存液をその高圧状態を維持しつつ送通管３４を通して洗浄ノズル２０より基板Ｗ搬送方向の下流側に位置する二流体ノズル３０に供給する。エアボンベ３５から高圧エアが供給される二流体ノズル３０は、供給される酸素溶存液を高圧エアとともに噴出する。二流体ノズル３０から酸素溶存液が噴出する際に圧力解放がなされて、過飽和状態あるいはそれに近い状態の酸素溶存液中の溶存酸素が気化して微細バブルが発生する。これにより、二流体ノズル３０から酸素の微細バブルを含有する液体が第１処理液として霧状となって噴出する（第１洗浄機構）。二流体ノズル３０においては、供給される高圧エアの流量に応じて噴出する液中に含まれる微細バブルのサイズを調整することが可能であり、この二流体ノズル３０から第１処理液として噴出する液中に含まれる酸素のバブルは、マイクロナノバブルあるいはナノバブル等の極めて小さいサイズ（例えば、１０μｍ以下程度）に設定されている。 The O 2 dissolved liquid generating mechanism 32 mixes pure water supplied from the tank 80 and oxygen gas supplied from the oxygen cylinder 31 and dissolves the oxygen gas in pure water under a high pressure, so that the supersaturated state is obtained. Or the oxygen solution which will be in the state close | similar to it is produced | generated. The O 2 dissolved liquid generation mechanism 32 supplies the generated oxygen dissolved liquid to the two-fluid nozzle 30 located downstream of the cleaning nozzle 20 in the substrate W conveyance direction through the transmission pipe 34 while maintaining the high pressure state. The two-fluid nozzle 30 to which high-pressure air is supplied from the air cylinder 35 ejects the supplied oxygen-dissolved liquid together with the high-pressure air. When the oxygen-dissolved liquid is ejected from the two-fluid nozzle 30, pressure is released, and dissolved oxygen in the oxygen-saturated liquid in a supersaturated state or a state close thereto is vaporized to generate fine bubbles. Thereby, the liquid containing the fine bubbles of oxygen is ejected from the two-fluid nozzle 30 in the form of a mist as the first processing liquid (first cleaning mechanism). In the two-fluid nozzle 30, it is possible to adjust the size of the fine bubbles contained in the liquid ejected in accordance with the flow rate of the supplied high-pressure air, and the two-fluid nozzle 30 ejects the first processing liquid. The oxygen bubbles contained in the liquid are set to a very small size (for example, about 10 μm or less) such as micro-nano bubbles or nano bubbles.

エア溶存液生成機構４２、６２は、それぞれ、タンク８０から供給される純水とエアボンベ４１、６１から供給される空気とを混合し、高圧力下で空気を純水中に溶解させてエア溶存液を生成する。エア溶存液生成機構４２、６２は、生成したエア溶存液をその高圧状態を維持しつつ送通管４３ａ、６３ａを通してバブル発生ユニット４４、６４に供給する。バブル発生ユニット４４、６４は、複数のオリフィスを有する構造となっており、供給される高圧状態のエア溶存液がその複数のオリフィスを通過する際に圧力解放されて、エア溶存液中の溶存空気が気化して空気の微細バブルが発生する。   The air-dissolved liquid generating mechanisms 42 and 62 mix pure water supplied from the tank 80 and air supplied from the air cylinders 41 and 61, respectively, dissolve the air in pure water under high pressure, and dissolve the air. A liquid is produced. The air dissolved liquid generating mechanisms 42 and 62 supply the generated air dissolved liquid to the bubble generating units 44 and 64 through the transmission pipes 43a and 63a while maintaining the high pressure state. The bubble generating units 44 and 64 have a structure having a plurality of orifices, and when the supplied high-pressure air-dissolved liquid passes through the plurality of orifices, the pressure is released, and the dissolved air in the air-dissolved liquid Vaporizes and generates fine air bubbles.

バブル発生ユニット４４は、エア溶存液から得られる空気の微細バブルを含有する液体を二流体ノズル３０より基板Ｗ搬送方向の下流に配置されるアクアナイフ４０に送通管４３ｂを通して供給する。アクアナイフ４０は、供給される微細バブルを含む液体を第２処理液として基板Ｗの搬送方向の上流側に向けて噴出する（第２洗浄機構）。エア溶存液生成機構４２及びバブル発生ユニット４４を含む機構では、純水に混合させる空気の流量や圧力解放の特性等を制御することにより、アクアナイフ４０に供給される液中に含まれる微細バブルのサイズを調整することが可能である。アクアナイフ４０から第２処理液として噴出される液中に含まれる空気のバブルは、マイクロバブル等の前述した二流体ノズル３０から噴出する第１処理液中に含まれる微細バブルより大きいサイズ（例えば、５０μｍ程度）に設定されている。   The bubble generation unit 44 supplies a liquid containing fine bubbles of air obtained from the air-dissolved liquid to the aqua knife 40 disposed downstream of the two-fluid nozzle 30 in the substrate W transport direction through the transmission pipe 43b. The aqua knife 40 ejects the supplied liquid containing fine bubbles as the second processing liquid toward the upstream side in the transport direction of the substrate W (second cleaning mechanism). In the mechanism including the air dissolved liquid generating mechanism 42 and the bubble generating unit 44, fine bubbles contained in the liquid supplied to the aqua knife 40 are controlled by controlling the flow rate of air mixed with pure water, the characteristics of pressure release, and the like. It is possible to adjust the size. The bubble of air contained in the liquid ejected from the aqua knife 40 as the second treatment liquid is larger than the fine bubbles contained in the first treatment liquid ejected from the aforementioned two-fluid nozzle 30 such as microbubbles (for example, , About 50 μm).

バブル発生ユニット６４は、エア溶存液から得られる微細バブルを含有する液体を前述したアクアナイフ４０及び洗浄ノズル５０より基板Ｗ搬送方向の下流側に配置される乾燥前ノズル６０に送通管６３ｂを通して供給する。乾燥前ノズル６０は、供給される微細バブルを含む液体を第３処理液として噴出する（第３洗浄機構）。エア溶存液生成機構６２及びバブル発生ユニット６４を含む機構でも、純水に混合させる空気の流量や圧力解放の特性等を制御することにより、乾燥前ノズル６０に供給される液中に含まれる微細バブルのサイズを調整することが可能であり、乾燥前ノズル６０から第３処理液として噴出される液中に含まれる空気のバブルは、マイクロバブルあるいはミリバブル等の、前述したアクアナイフ４０から噴出する第２処理液中に含まれる微細バブルより大きいサイズ（例えば、１００μｍ以上程度）に設定される。   The bubble generating unit 64 passes the liquid containing fine bubbles obtained from the air-dissolved liquid to the pre-drying nozzle 60 disposed downstream of the aqua knife 40 and the cleaning nozzle 50 in the substrate W conveyance direction through the transmission pipe 63b. Supply. The nozzle 60 before drying ejects the liquid containing the supplied fine bubble as a 3rd process liquid (3rd washing | cleaning mechanism). Even in the mechanism including the air dissolved liquid generating mechanism 62 and the bubble generating unit 64, the fineness contained in the liquid supplied to the nozzle 60 before drying is controlled by controlling the flow rate of air mixed with pure water, the characteristics of pressure release, and the like. The bubble size can be adjusted, and air bubbles contained in the liquid ejected from the pre-drying nozzle 60 as the third treatment liquid are ejected from the aqua knife 40 described above, such as microbubbles or millibubbles. It is set to a size (for example, about 100 μm or more) larger than the fine bubbles contained in the second treatment liquid.

前述した乾燥前ノズル６０より基板Ｗ搬送方向の下流側に配置されるエアナイフ７０には、エアボンベ７１からの高圧空気が供給されており、エアナイフ７０からエアが基板Ｗ搬送方向の上流側に向けて噴出するようになっている。   High-pressure air from the air cylinder 71 is supplied to the air knife 70 disposed on the downstream side in the substrate W transport direction from the pre-drying nozzle 60 described above, and the air is directed from the air knife 70 toward the upstream side in the substrate W transport direction. It comes to erupt.

前述したような構造の洗浄装置１００において、搬送機構１０のローラ上を順次搬送される基板Ｗ（被洗浄物）に対して、図２に示す手順に従って処理（洗浄処理）がなされる。   In the cleaning apparatus 100 having the above-described structure, processing (cleaning processing) is performed on the substrate W (object to be cleaned) sequentially transported on the rollers of the transport mechanism 10 according to the procedure shown in FIG.

基板Ｗが前工程（例えば、ゲート配線パターにング工程）から搬送路（搬送機構１０のローラ上）に搬入されると（Ｓ１）、当該基板Ｗの搬送が開始される。搬送される基板Ｗは、まず、洗浄ノズル２０から噴出するリンス液が吹き付けられる（Ｓ２）。これにより基板Ｗのプレリンス処理がなされる。洗浄ノズル２０の位置を通過してプレリンス処理のなされた基板Ｗは、更に、搬送されて、二流体ノズル３０から噴出する第１処理液が吹き付けられる（Ｓ３：第１ステップ）。第１処理液には酸素（Ｏ2）のマイクロナノバブルやナノバブル等の極めて小さいバブルが含有されており、このような第１処理液が基板Ｗの表面に吹き付けられると、その極めて小さい酸素のバブルが圧壊（消滅）する際に生じ得るラジカル反応、更にそれにより電離する酸素の作用等によって基板Ｗ表面から有機残渣が剥離され得るともに、極めて小さいバブルが負電位に帯電するので、そのように剥離された有機残渣やパーティクルの表面に付着する微細バブルの電位反発により当該有機残渣や他のパーティクルが基板Ｗ表面から分離され得る。このようにして基板Ｗ表面に付着した第１処理液中には、基板Ｗ表面から剥離・分離された有機残渣やパーティクルが浮遊している。 When the substrate W is carried into the transport path (on the roller of the transport mechanism 10) from the previous process (for example, the gate wiring patterning process) (S1), the transport of the substrate W is started. The substrate W to be transported is first sprayed with a rinse liquid ejected from the cleaning nozzle 20 (S2). Thereby, the pre-rinsing process of the substrate W is performed. The substrate W that has passed through the position of the cleaning nozzle 20 and has been pre-rinsed is further transported and sprayed with the first processing liquid ejected from the two-fluid nozzle 30 (S3: first step). The first processing liquid contains extremely small bubbles such as oxygen (O 2 ) micro-nano bubbles and nano bubbles. When such a first processing liquid is sprayed on the surface of the substrate W, the extremely small bubbles of oxygen are present. The organic residue can be peeled off from the surface of the substrate W by the radical reaction that can occur when the material collapses (disappears), and the action of oxygen that ionizes, and so on, and very small bubbles are charged to a negative potential. The organic residue and other particles can be separated from the surface of the substrate W by the potential repulsion of fine bubbles adhering to the surface of the organic residue and particles. In this way, in the first treatment liquid adhering to the surface of the substrate W, organic residues and particles separated and separated from the surface of the substrate W are floating.

二流体ノズル３０の位置を通過して第１処理液による洗浄のなされた基板Ｗは、更に、搬送されて、アクアナイフ４０から噴出する第２処理液が吹き付けられる（Ｓ４：第２ステップ）。アクアナイフ４０からは搬送方向の上流側に向けて第２処理液が噴出されるので、その噴出力と基板Ｗの下流側への移動とが相俟って、アクアナイフ４０から吹き付けられる第２処理液によって基板Ｗ表面に付着した第１処理液が飛ばされていく。また、第２処理液にはマイクロバブル等の前記第１処理液に含まれる微細バブルより大きいサイズのバブルが含有されているので、その比較的大きいバブルが前述したように基板Ｗ表面から剥離・分離された有機残渣やパーティクルに付着すると、その比較的大きいバブルによって、その有機残渣やパーティクルを処理液表面まで比較的早く浮上させることができる。これにより、有機残渣やパーティクルが浮遊する第１処理液がアクアナイフ４０からの第２処理液の吹き付けにより飛ばされる際に、その有機残渣やパーティクルが再び基板Ｗ表面に付着してしまうことを確実に防止することができる。   The substrate W that has passed through the position of the two-fluid nozzle 30 and has been cleaned with the first processing liquid is further transported and sprayed with the second processing liquid ejected from the aqua knife 40 (S4: second step). Since the second processing liquid is ejected from the aqua knife 40 toward the upstream side in the transport direction, the second output sprayed from the aqua knife 40 in combination with the jet power and the downstream movement of the substrate W. The first processing liquid adhered to the surface of the substrate W is blown off by the processing liquid. Further, since the second processing liquid contains bubbles having a size larger than the fine bubbles contained in the first processing liquid, such as microbubbles, the relatively large bubbles are peeled off from the surface of the substrate W as described above. When adhering to the separated organic residue or particle, the organic residue or particle can float up to the surface of the treatment liquid relatively quickly by the relatively large bubble. Accordingly, when the first processing liquid in which the organic residue and particles are floated is blown off by spraying the second processing liquid from the aqua knife 40, it is ensured that the organic residue and particles adhere to the surface of the substrate W again. Can be prevented.

アクアナイフ４０の位置を通過して第２処理液による洗浄のなされた基板Ｗは、更に、搬送されて、洗浄ノズル５０から噴出するリンス液（純水）が吹き付けられる（Ｓ５）。このリンス液により、基板Ｗ表面に残った第２処理液が流し落とされる。   The substrate W that has passed through the position of the aqua knife 40 and has been cleaned with the second processing liquid is further transported and sprayed with rinsing liquid (pure water) ejected from the cleaning nozzle 50 (S5). Due to this rinse liquid, the second treatment liquid remaining on the surface of the substrate W is poured off.

洗浄ノズル５０の位置を通過してリンス処理のなされた基板Ｗは、更に、搬送されて、乾燥前ノズル６０から噴出する第３処理液が吹き付けられる（Ｓ６：第３ステップ）。この乾燥前ノズル６０から吹き付けられる第３処理液により基板表面Ｗに不均一に残ったリンス液が流し落とされて、当該基板Ｗ表面が第３処理液にて一様に覆われた状態となる。そして、第３処理液には、アクアナイフ４０から噴出する第２処理液に含まれるバブル及び二流体ノズル３０から噴出する第１処理液に含まれるバブルより大きいサイズのバブルが含まれており、そのバブルによってその第３処理液中に含まれる液分が比較的少ない状態となっている。従って、基板Ｗ表面が液分の比較的少ない第３処理液によって一様に覆われた状態となる。   The substrate W that has passed through the position of the cleaning nozzle 50 and has been subjected to the rinsing process is further transported and sprayed with a third processing liquid ejected from the pre-drying nozzle 60 (S6: third step). The rinse liquid remaining non-uniformly on the substrate surface W is washed away by the third processing liquid sprayed from the pre-drying nozzle 60, and the surface of the substrate W is uniformly covered with the third processing liquid. . The third treatment liquid includes bubbles contained in the second treatment liquid ejected from the aqua knife 40 and bubbles having a size larger than the bubbles contained in the first treatment liquid ejected from the two-fluid nozzle 30. The bubbles contain a relatively small amount of liquid in the third processing liquid. Therefore, the surface of the substrate W is uniformly covered with the third processing liquid having a relatively small amount of liquid.

その後、基板Ｗは、乾燥前ノズル６０の位置を通過してエアナイフ７０の位置を通過する際に、エアナイフ７０から噴出する高圧エアが吹き付けられる（Ｓ７）。この吹き付けられる高圧エアによって基板Ｗ表面に一様に残っている第３処理液（水分子）がその基板Ｗ表面より物理的に排除されて、基板Ｗの乾燥処理がなされる。前述したように、基板Ｗ表面を一様に覆う第３処理液は含有するバブルによって液分が比較的少ない状態となっているので、当該基板Ｗを効率的に、かつ、一様に乾燥させることができる。   Thereafter, when the substrate W passes through the position of the pre-drying nozzle 60 and passes through the position of the air knife 70, high-pressure air ejected from the air knife 70 is sprayed (S7). The third treatment liquid (water molecules) that remains uniformly on the surface of the substrate W is physically removed from the surface of the substrate W by the high-pressure air blown, and the substrate W is dried. As described above, since the third processing liquid that uniformly covers the surface of the substrate W is in a state where the liquid content is relatively small due to the contained bubbles, the substrate W is efficiently and uniformly dried. be able to.

このようにして乾燥処理の終了した基板Ｗは、搬送路（搬送機構１０のローラ上）から搬出され（Ｓ８）、次の工程（例えば、成膜処理工程）に移動される。   The substrate W that has been dried in this way is unloaded from the transport path (on the rollers of the transport mechanism 10) (S8) and moved to the next process (for example, a film forming process).

上述したような洗浄装置１００（洗浄方法：図２参照）によれば、基板Ｗに対して、バブル圧壊（消滅）時のラジカル反応の発生や電位反発等の比較的小さいバブルの好ましい性質を利用した第１処理液による洗浄の後に、パーティクルの浮上分離等の比較的大きいバブルの好ましい性質を利用した第２処理液による洗浄を行うことができるので、そのバブル圧壊（消滅）時のラジカル反応の発生や電位反発等の性質、それに次いで、パーティクルの浮上分離等の性質を順次利用しつつ基板Ｗを洗浄することができる。従って、それらの洗浄に好ましいバブルの多くの性質を有効に利用しつつ基板Ｗの効果的な洗浄が可能になる。   According to the cleaning apparatus 100 (cleaning method: see FIG. 2) as described above, the preferable properties of relatively small bubbles such as generation of radical reaction and potential repulsion at the time of bubble collapse (extinction) are utilized for the substrate W. After the cleaning with the first processing liquid, cleaning with the second processing liquid using the preferable properties of relatively large bubbles such as floating separation of particles can be performed, so that the radical reaction at the time of bubble collapse (extinction) The substrate W can be cleaned while sequentially utilizing properties such as generation and potential repulsion, and then properties such as floating separation of particles. Therefore, it is possible to effectively clean the substrate W while effectively utilizing many properties of the bubbles preferable for the cleaning.

前述した洗浄装置１００は、搬送機構１００を搬送される基板Ｗに対して各洗浄処理を行う構造であったが、支持テーブル上にセットされた基板Ｗに対して、各ノズルが順次交換セットされながら各洗浄処理を行う構造のものであってもよい。   The above-described cleaning apparatus 100 has a structure in which each cleaning process is performed on the substrate W transported by the transport mechanism 100, but each nozzle is sequentially replaced and set with respect to the substrate W set on the support table. However, the structure may be such that each cleaning process is performed.

なお、二流体ノズル３０から噴出する第１処理液は、酸素のバブルを含むものであったが、例えば、更に活性化され易いオゾンのバブルを含むものであってもよい。また、第２処理液同様に空気のバブルを含むものであってもよい。   The first treatment liquid ejected from the two-fluid nozzle 30 includes oxygen bubbles, but may include, for example, ozone bubbles that are more easily activated. Moreover, it may contain air bubbles like the second treatment liquid.

二流体ノズル３０から噴出する第１処理液は、純水に酸素等の気体のバブルを含有するものであったが、特に洗浄効果の高い薬液（例えば、アンモニア水、中性洗剤、アルカリ溶液等）にバブルを含有するものであってもよい。   The first treatment liquid ejected from the two-fluid nozzle 30 is a liquid containing gas bubbles such as oxygen in pure water, but has a particularly high cleaning effect (for example, aqueous ammonia, neutral detergent, alkaline solution, etc.) ) May contain bubbles.

また、前述した洗浄装置１００では、第１処理液を噴出する機構として二流体ノズル３０が用いられているが、第２処理液や第３処理液に含まれるバブルよりサイズの小さいバブルを含む処理液（第１処理液）を噴出することができるものであれば、他の構造のものであってもよい。   In the cleaning apparatus 100 described above, the two-fluid nozzle 30 is used as a mechanism for ejecting the first processing liquid. However, the processing includes bubbles having a smaller size than bubbles contained in the second processing liquid and the third processing liquid. Any other structure may be used as long as it can eject the liquid (first treatment liquid).

前述した洗浄装置１００は、半導体基板Ｗを被洗浄物とするものであったが、ガラス基板等の板状の物や、他の形状の物を被洗浄物とすることもできる。   Although the cleaning apparatus 100 described above uses the semiconductor substrate W as an object to be cleaned, a plate-like object such as a glass substrate or an object having another shape can be used as an object to be cleaned.

１０ 搬送機構
２０ 洗浄ノズル
２１、５１ リンス液供給機構
２２、５２ 送通管
３０ 二流体ノズル
３１ 酸素ボンベ
３２ Ｏ2溶存液生成機構
３４ 送通管
３５ エアボンベ
４０ アクアナイフ
４１、６１ エアボンベ
４２、６２ エア溶存液生成機構
４４、６４ バブル発生ユニット
４３ａ、４３ｂ、６３ａ、６３ｂ 送通管
６０ 乾燥前ノズル
７０ エアナイフ
７１ エアボンベ
１００ 洗浄装置 10 transport mechanism 20 cleaning nozzles 21, 51 rinsing liquid supply mechanism 22 and 52 Okutsukan 30 two-fluid nozzle 31 oxygen bomb 32 O 2 dissolved solution producing mechanism 34 Okutsukan 35 Eabonbe 40 Aqua knife 41,61 Eabonbe 42,62 Air Dissolved liquid generating mechanism 44, 64 Bubble generating unit 43a, 43b, 63a, 63b Delivery pipe 60 Pre-drying nozzle 70 Air knife 71 Air cylinder 100 Cleaning device

Claims (11)

処理液をかけて被洗浄物を洗浄する洗浄方法であって、
バブルを含む第１処理液を前記被洗浄物にかける第１ステップと、
該第１ステップの後に、前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記第１処理液が付着した状態の前記被洗浄物にかける第２ステップを有し、
前記第１処理液に含まれるバブルの気体と前記第２処理液に含まれるバブルの気体とが異なることを特徴とする洗浄方法。 A cleaning method for cleaning an object to be cleaned by applying a treatment liquid,
A first step of applying a first treatment liquid containing bubbles to the object to be cleaned;
After the first step, it has a second step of applying a second treatment solution containing the large size of the bubbles from the bubble contained in the first treatment liquid to the object to be cleaned in a state where the first processing solution is attached ,
A cleaning method , wherein a bubble gas contained in the first treatment liquid is different from a bubble gas contained in the second treatment liquid . 処理液をかけて被洗浄物を洗浄する洗浄方法であって、
バブルを含む第１処理液を前記被洗浄物にかける第１ステップと、
該第１ステップの後に、前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記第１処理液が付着した状態の前記被洗浄物にかける第２ステップを有し、
前記第２ステップの後であって、前記被洗浄物を乾燥させる直前にバブルを含む第３処理液を当該被洗浄物にかける第３ステップを有することを特徴とする洗浄方法。 A cleaning method for cleaning an object to be cleaned by applying a treatment liquid,
A first step of applying a first treatment liquid containing bubbles to the object to be cleaned;
After the first step, it has a second step of applying a second treatment solution containing the large size of the bubbles from the bubble contained in the first treatment liquid to the object to be cleaned in a state where the first processing solution is attached ,
A cleaning method comprising a third step of applying a third treatment liquid containing bubbles to the object to be cleaned immediately after the second step and immediately before drying the object to be cleaned . 前記被洗浄物は搬送路上を搬送され、
前記第２ステップは、前記第１ステップより搬送方向の下流側でなされる請求項１または２記載の洗浄方法。 The object to be cleaned is transported on a transport path,
The second step is a method of cleaning according to claim 1 or 2 wherein done downstream of the transport direction from the first step. 前記第１処理液に含まれるバブルの気体は酸素及びオゾンのいずれかである請求項１乃至３のいずれかに記載の洗浄方法。 The cleaning method according to claim 1, wherein the bubble gas contained in the first treatment liquid is either oxygen or ozone. 前記第３処理液に含まれるバブルのサイズは、前記第２処理液に含まれるバブルのサイズより大きい請求項２記載の洗浄方法。 The size of the bubbles included in the third processing liquid, a method of cleaning size larger claim 2, wherein the bubbles contained in the second treatment liquid. 前記被洗浄物は搬送路上を搬送され、
前記第３ステップは、前記第２ステップより搬送方向の下流側でなされる請求項２または５記載の洗浄方法。 The object to be cleaned is transported on a transport path,
The cleaning method according to claim 2 or 5 , wherein the third step is performed downstream of the second step in the transport direction. 被洗浄物に処理液をかけて洗浄する洗浄装置であって、
バブルを含む第１処理液を前記被洗浄物にかける第１洗浄機構と、
前記第１洗浄機構によりかけられた第１処理液が付着した状態の前記被洗浄物に前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記被洗浄物にかける第２洗浄機構とを有し、
前記第１処理液に含まれるバブルの気体と前記第２処理液に含まれるバブルの気体とが異なることを特徴とする洗浄装置。 A cleaning device that cleans an object to be cleaned by applying a treatment liquid,
A first cleaning mechanism for applying a first processing liquid containing bubbles to the object to be cleaned;
A second processing liquid containing bubbles larger in size than bubbles contained in the first processing liquid is applied to the object to be cleaned with the first processing liquid applied by the first cleaning mechanism attached thereto. have a second cleaning mechanism,
A cleaning apparatus , wherein a bubble gas contained in the first treatment liquid is different from a bubble gas contained in the second treatment liquid . 被洗浄物に処理液をかけて洗浄する洗浄装置であって、
バブルを含む第１処理液を前記被洗浄物にかける第１洗浄機構と、
前記第１洗浄機構によりかけられた第１処理液が付着した状態の前記被洗浄物に前記第１処理液に含まれるバブルより大きいサイズのバブルを含む第２処理液を前記被洗浄物にかける第２洗浄機構とを有し、
前記第２洗浄機構から前記第２処理液がかけられた前記被洗浄物を乾燥させる直前にバブルを含む第３処理液を当該被洗浄物にかける乾燥前処理機構を有することを特徴とする洗浄装置。 A cleaning device that cleans an object to be cleaned by applying a treatment liquid,
A first cleaning mechanism for applying a first processing liquid containing bubbles to the object to be cleaned;
A second processing liquid containing bubbles larger in size than bubbles contained in the first processing liquid is applied to the object to be cleaned with the first processing liquid applied by the first cleaning mechanism attached thereto. have a second cleaning mechanism,
Cleaning comprising a pre-drying processing mechanism for applying a third processing liquid containing bubbles to the object to be cleaned immediately before drying the object to which the second processing liquid is applied from the second cleaning mechanism. apparatus. 前記被洗浄物が搬送される搬送経路を有し、
前記第２洗浄機構は、前記第１洗浄機構より搬送方向の下流側に配置された請求項７または８記載の洗浄装置。 A transport path through which the object to be cleaned is transported;
The cleaning apparatus according to claim 7 or 8, wherein the second cleaning mechanism is disposed downstream of the first cleaning mechanism in the transport direction. 前記第３処理液に含まれるバブルのサイズは、前記第２処理液に含まれるバブルのサイズより大きい請求項８記載の洗浄装置。 The cleaning apparatus according to claim 8 , wherein a bubble size included in the third processing liquid is larger than a bubble size included in the second processing liquid. 前記被洗浄物が搬送される搬送経路を有し、
前記乾燥前処理機構は、前記第２洗浄機構より搬送方向の下流側に配置された請求項８または１０記載の洗浄装置。 A transport path through which the object to be cleaned is transported;
The cleaning apparatus according to claim 8 or 10 , wherein the drying pretreatment mechanism is disposed downstream in the transport direction from the second cleaning mechanism.
JP2010137886A 2010-06-17 2010-06-17 Cleaning method and cleaning device Expired - Fee Related JP5656245B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010137886A JP5656245B2 (en) 2010-06-17 2010-06-17 Cleaning method and cleaning device
TW100113680A TWI484541B (en) 2010-06-17 2011-04-20 Washing method and cleaning device
TW104108290A TW201523713A (en) 2010-06-17 2011-04-20 Cleaning method and cleaning device
CN201410408810.0A CN104307780A (en) 2010-06-17 2011-05-26 Cleaning method and cleaning device
CN201110138689.0A CN102284447B (en) 2010-06-17 2011-05-26 Cleaning method and cleaning device
KR1020110057494A KR101271302B1 (en) 2010-06-17 2011-06-14 Cleaning method and cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010137886A JP5656245B2 (en) 2010-06-17 2010-06-17 Cleaning method and cleaning device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014235605A Division JP2015062249A (en) 2014-11-20 2014-11-20 Cleaning method and cleaning device

Publications (2)

Publication Number Publication Date
JP2012004331A JP2012004331A (en) 2012-01-05
JP5656245B2 true JP5656245B2 (en) 2015-01-21

Family

ID=45331354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010137886A Expired - Fee Related JP5656245B2 (en) 2010-06-17 2010-06-17 Cleaning method and cleaning device

Country Status (4)

Country Link
JP (1) JP5656245B2 (en)
KR (1) KR101271302B1 (en)
CN (2) CN102284447B (en)
TW (2) TWI484541B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6235070B2 (en) * 2015-07-06 2017-11-22 芝浦メカトロニクス株式会社 Substrate processing apparatus and substrate processing method
JP6653620B2 (en) * 2016-05-24 2020-02-26 大同メタル工業株式会社 Cleaning equipment
KR20180003109A (en) * 2016-06-30 2018-01-09 세메스 주식회사 Apparatus and Method for treating substrate
JP7032726B2 (en) * 2017-10-11 2022-03-09 旭サナック株式会社 Cleaning equipment and cleaning method
GB2573012A (en) * 2018-04-20 2019-10-23 Zeeko Innovations Ltd Fluid jet processing
CN108787672A (en) * 2018-05-28 2018-11-13 武汉华星光电技术有限公司 Base plate cleaning device, developing machine and substrate-cleaning method
CN110544647A (en) * 2018-11-06 2019-12-06 北京北方华创微电子装备有限公司 Metal interconnection cleaning device and cleaning method
CN110473773B (en) * 2019-08-22 2022-03-22 北京北方华创微电子装备有限公司 Wafer cleaning method and wafer cleaning equipment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004121962A (en) * 2002-10-01 2004-04-22 National Institute Of Advanced Industrial & Technology Method and apparatus for using nanometer-bubble
JP2007160175A (en) * 2005-12-12 2007-06-28 Sharp Corp Cleaning device
JP2008080230A (en) * 2006-09-27 2008-04-10 Dainippon Screen Mfg Co Ltd Apparatus and method of treating substrate
JP2008093577A (en) * 2006-10-12 2008-04-24 Dainippon Screen Mfg Co Ltd Substrate treatment device and substrate treatment method
JP2008098439A (en) * 2006-10-12 2008-04-24 Dainippon Screen Mfg Co Ltd Wash water feeding unit and substrate washer
JP2008098430A (en) * 2006-10-12 2008-04-24 Dainippon Screen Mfg Co Ltd Substrate treatment device and substrate treatment method
JP5252861B2 (en) * 2007-01-15 2013-07-31 芝浦メカトロニクス株式会社 Substrate processing equipment
JP5153305B2 (en) * 2007-11-20 2013-02-27 芝浦メカトロニクス株式会社 Resist film peeling apparatus and peeling method
JP4838227B2 (en) * 2007-11-29 2011-12-14 シャープ株式会社 Cleaning device and cleaning method
KR101001545B1 (en) * 2008-03-28 2010-12-17 엠파워(주) Substrate Cleaning Apparatus And Method Using The Same
KR101035051B1 (en) * 2008-03-28 2011-05-19 엠파워(주) Substrate Cleaning Apparatus Using Bubble And Method Using The Same

Also Published As

Publication number Publication date
CN102284447B (en) 2014-08-27
TW201523713A (en) 2015-06-16
CN102284447A (en) 2011-12-21
KR20110137745A (en) 2011-12-23
TW201203330A (en) 2012-01-16
KR101271302B1 (en) 2013-06-04
CN104307780A (en) 2015-01-28
TWI484541B (en) 2015-05-11
JP2012004331A (en) 2012-01-05

Similar Documents

Publication Publication Date Title
JP5656245B2 (en) Cleaning method and cleaning device
JP5252861B2 (en) Substrate processing equipment
TWI405622B (en) Improved ultrasonic cleaning fluid, method and apparatus
KR20080028804A (en) Substrate processing apparatus and substrate processing method
JP2006223995A (en) Washing method and washing device
WO2011052111A1 (en) Substrate cleaning device and substrate cleaning method
JP2007216158A (en) Substrate cleaning method and apparatus using superheated steam
JP2008093577A (en) Substrate treatment device and substrate treatment method
JP2006286665A (en) Method and apparatus for cleaning electronic device
JP5153305B2 (en) Resist film peeling apparatus and peeling method
JP2013248582A (en) Device and method for cleaning article such as substrate for electronic materials
JP5717241B2 (en) Processing apparatus and processing method
WO2011101936A1 (en) Etching method and etching device
WO2011142060A1 (en) Cleaning method and cleaning device
JP2006205065A (en) Ice slurry production apparatus and apparatus treating substrate
JP2003332288A (en) Water feeding method and water feeding apparatus
JP2008118065A (en) Substrate treatment method and substrate treatment device
JP2006231319A (en) Method and device of processing substrate
JP2008098430A (en) Substrate treatment device and substrate treatment method
JP2015062249A (en) Cleaning method and cleaning device
JP4909789B2 (en) Substrate processing equipment
WO2012090815A1 (en) Resist removal device and resist removal method
KR101035051B1 (en) Substrate Cleaning Apparatus Using Bubble And Method Using The Same
JP2002113430A (en) Substrate treatment device
JP2007059832A (en) Substrate processing apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140319

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141119

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141120

R150 Certificate of patent or registration of utility model

Ref document number: 5656245

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees