JP2003332288A - Water feeding method and water feeding apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a water feeding method and apparatus in which efficiency is improved and costs are reduced by improving a capability of releasing/ removing an unwanted object such as resist film. <P>SOLUTION: The water feeding method for feeding water to a target in order to perform treatment including any one of cleaning, releasing and working of the target is provided with a dry steam generating step for generating dry steam from the water and a blowing step for blowing the dry steam (1) or a mixture (2) of the dry steam and mist from a nozzle onto a plate-like target treatment surface of the target. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for supplying water (H ₂ O) in a manufacturing process of a product, and uses high-purity water used for processing the surface of the product and cleaning / peeling. The present invention relates to a supplying method and an apparatus. More specifically, semiconductor wafers and hard disks (HD),
A water supply method for peeling and removing unnecessary substances such as a resist film deposited in a lithography process and a polymer residue deposited in an etching process on the surface of an object such as a liquid crystal display (LCD) or a flat panel display (FPD) And equipment.

[0002]

2. Description of the Related Art In the manufacturing process of semiconductor devices, liquid crystals, magnetic disks, printed circuit boards, etc., a resist is applied to the surface of these objects, and precise processing such as pattern formation is performed on the surfaces of the objects using lithography and etching. Give. After that, a process of removing unnecessary substances such as a resist film and a polymer residue attached to the surfaces of these objects is performed. Conventional techniques for removing unwanted substances such as resist films include plasma ashing method in which the resist film is ashed and removed by oxygen plasma, heating and dissolving the film body with an organic solvent (solvent such as phenol-based or halogen-based), and concentrated method. There is a heating dissolution method using sulfuric acid / hydrogen peroxide.

However, in any of the above-mentioned methods, time, energy and chemical materials for decomposing and dissolving the resist film and the like are required, and the burden of decomposing and removing the resist film and the like is large. A vacuum device, plasma source, and semiconductor gas are required to remove the resist with a commonly used plasma asher device, but the auxiliary equipment such as vacuum control and plasma stability control and the control device become complicated. There are problems such as large size and high cost. In addition, when using an RCA-based wet cleaning device, a large amount of chemical liquid / high temperature chemical liquid control /
There is a problem that many incidental facilities such as waste liquid and drainage and environmental measures are required.

Therefore, in the technical field of treating a precision surface including a technique for removing unnecessary substances such as a resist film, the conventional technique using a chemical substance or a chemical treatment is removed from the conventional technique, and the technique is friendly to the earth and the environment. It is hoped that the method that uses water and steam, which are abundant in the natural world, will be paid great attention and that this method will be utilized and developed. Therefore, the present applicant has filed Japanese Patent Application No. 2001-264627 “Water Supply Method and Water Supply Device” dated August 31, 2001 and Japanese Patent Application No. 2002 dated February 18, 2002.
-40739 In the "water supply method and water supply device", in order to solve the various problems described above, a water mist body (misty water) containing liquid water particles and a steam body (gaseous water) are mixed. The patent application has already been filed for the invention to be provided to the object.

[0005]

DISCLOSURE OF THE INVENTION The present invention provides a method and an apparatus which further develops the above-mentioned application relating to water supply and enables more efficient and practical water supply. Also, in semiconductor-related fields such as resist stripping, polymer removal, cleaning, etc. and manufacturing processes, the processing effect is higher than before, and equipment costs are high, and efficient processing can be performed without investment. It is an object of the present invention to provide such a water supply method and apparatus.

[0006]

In order to solve the above-mentioned problems, a water supply method and a water supply apparatus according to the present invention include:
The following means are used. (1) A water supply method for supplying water to perform a treatment including any of cleaning / peeling / processing of an object, and a dry steam generating step for generating dry steam (dry steam) from water And 1) dry steam, or 2) a mixture of dry steam and mist, and a spraying step of spraying from a nozzle onto a flat object processing surface of the object, and supplying water to the object. The water supply method is as follows. (2) In the water supply method of (1), the dry steam is dry steam having a dryness of 99% or more. (3) A water supply device for supplying water to perform a treatment including any of cleaning / peeling / processing of an object, and dry steam generating means for generating dry steam from water, and 1) dry Nozzle means for spraying steam, or 2) a mixture of dry steam and mist onto a flat target processing surface of the object, and a water supply configured to supply water to the object. The device. (4) In the water supply device according to (3), the dry steam is dry steam having a dryness of 99% or more. (5) In the water supply device according to (3) or (4), the nozzle means is configured as a two-fluid mixing type jet nozzle having a first flow path and a second flow path.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a water supply method and a water supply apparatus according to the present invention will be described in detail with reference to the accompanying drawings 1 to 5. FIG. 1 is a schematic diagram showing an example of a device configuration according to the present invention, and FIG. 2 is a schematic diagram showing another device configuration according to the present invention. Further, (I) of FIG. 3 is a graph showing an example of the change of the dry steam pressure and the steam generation amount due to the dry steam pressure during the process according to the present invention, and (II) of FIG.
FIG. 6 is a graph showing an example of changes in the nozzle cross-sectional area of (blowing outlet) and the amount of steam generated therefrom. FIG. 4 is a graph according to the present invention, showing the weight ratio (%) of the dry steam and water mist to be mixed, and the resist stripping time (sec) until the resist is completely stripped. It is a figure which shows an example of the measurement data regarding a relationship. Then, FIG. 5 is a schematic structural diagram of a steam body (water vapor body) and a water mist body used in the present invention.

First, in FIG. 5, steam (water vapor)
As shown in FIG. 5 (a), the steam structure here shows that water and vaporized water (vaporized water (H ₂ O) are vaporized by heating in a gas such as air. The molecules) are generally present in the entrapped state, but it is also possible to configure them as 100% steam without any gas. As shown in FIG. 5B, one water mist body exists in a state where liquid water particles are contained in a gas such as air. In the present invention, this steam (steam body) is particularly configured as dry steam (dry steam body). In general, steam is composed of steam (water vapor) and floating droplets, but in the present invention, the steam (water vapor) is set to a high weight ratio in the steam. Is called dry steam.
The weight ratio of steam (water vapor) is, for example, 99%
It can be set as above, and this can be called dryness.

In the method using dry steam (dry steam) according to the present invention, it is possible to greatly promote peeling by weakening the adhesion by penetrating into the organic matter contained in the object to be treated. It has an excellent feature that the oxidation reaction of the product is hard to occur. At this time, the higher the dryness of the dry steam, the better, but it is more preferable that the dryness is 99% or more. And dry steam may be used alone, or dry steam +
You may use it as a water mist body. By using such dry steam, process control is easy and excellent in stability in the semiconductor manufacturing field. Especially when using only dry steam, many incidental equipments are unnecessary, simple design and low cost There is a merit that it will be possible.

In order to generate steam (dry steam) containing vaporized water in the gas, for example, liquid water can be dropped on a heating plate and vaporized to generate it. By heating, the pressurized hot water can also be directly blown to bring about boiling due to the pressure drop when the hot water is blown, and thus the production of the steam body is easy. The temperature of these steam bodies may be controlled to 100 ° C. or higher, preferably 130 to 160 ° C. under atmospheric pressure.

In order to generate one of the water mist bodies,
For example, it can be generated by vigorously ejecting water at room temperature or a mixture of water and gas from a nozzle, or spraying gas near the water ejection port, utilizing the so-called atomization principle. Can be generated,
Furthermore, the pressurized hot water can be directly blown to bring about boiling by boiling due to the pressure drop, and thus the water mist body can be easily produced. The temperature of these water mist bodies may be 100 ° C. or lower under atmospheric pressure.

FIG. 1 is a schematic diagram showing an example of a device configuration for carrying out the water supply method and device according to the present invention. In the processing chamber 10, a flat or flat object 20 such as a semiconductor wafer is placed (placed) on a placement table 22 rotated by a rotation shaft (not shown). The nozzle device 16 is arranged so as to face the target processing surface of the target object 20 with a predetermined clearance (gap) from the end of the blowout port, and 1) dry steam or 2) dry steam and mist. Is sprayed on. With such a device configuration, in the process of removing an unnecessary substance such as a resist, while the target object 20 is rotated at a predetermined speed, the nozzle device 16 is scanned in the radial direction of the target object 20 (arrow 18), The blowout body is ejected from the blowout port on the tip side of the nozzle device 16,
It is sprayed as a spray on the target processing surface of the target 20 to clean the surface and remove / remove the resist.

In the present invention, this steam (steam body) is configured as dry steam (dry steam). In the apparatus shown in FIG. 1, the steam supply unit 14 for producing dry steam is arranged. The steam supply unit 14 is a unit that generates steam / vapor, but can generate this as dry steam (dry steam). From this steam supply unit 14, a flow path (pipe, line) 14a-pressure valve 1
4b-flow path 14a'-pressure gauge 14c, to flow path 16a-nozzle 16, and then steam (dry steam) is ejected from the outlet of nozzle 16. It should be noted that the discharged substances and unnecessary substances generated in the chamber 10 are discharged from the discharge unit 24 to the outside.

In the apparatus of FIG. 1 according to the present invention, a steam supply unit 14 for supplying this dry steam is provided.
Besides, a water supply unit 12 for supplying pure water (DIW) such as high-purity water or deionized water is provided. The water supply unit 12 can be configured not only to supply pure water (DIW) but also to another unit as a unit for generating and supplying the water mist body. The flow from the water supply unit 12 continues to the flow path 12a-flow control section 12b-flow path 12a'-flow path 16a-nozzle 16, and the nozzle 16
Eject water or mist from the blowout port of. Further, at the location of the flow path 16a-nozzle 16 on the side of the blowing end, the one delivered from the water supply unit 12 and the one delivered from the steam supply unit 14 are mixed.

If the water mist body is made by the water supply unit 12 and the dry steam body (dry steam body) is made by the steam supply unit 14, the water mist body and the dry steam body are mixed. It is preferable that the nozzle 16 blows out from the blowing port. Even when the water mist body is not formed by the water supply unit 12, the [00
A water mist body can be formed by the method described in [11]. For example, in the apparatus of FIG. 1, the steam body produced by the steam supply unit 14 is supplied to the flow path 16 for pure water (DIW) sent from the water supply unit 12.
The water mist body can also be formed by directly mixing at the position of a.

FIG. 2 is also a diagram according to the present invention,
FIG. 2 is a schematic diagram showing a device configuration different from that in FIG. 1. The water supply device shown in FIG. 2 is provided with a steam / water supply unit 50 for generating water vapor by heating or pressurizing water, and dry steam can be generated here. The produced dry steam is sent to the regulator 40 through the flow path 60, and the dry steam adjusted and controlled by the regulator 40 is sent to the nozzle device 30 through the flow path 80. The flow path 60 here is the pressure valve 6
0b and a pressure gauge 60a are preferably provided. Further, from the steam / water supply unit 50, the DI is passed through the flow path 70.
W (high-purity water) is sent to the nozzle device 30. The temperature, flow rate, etc. relating to the DIW at this time can be appropriately selected and set, and the flow path 70 may be equipped with a pressure valve 70a and a flow meter 90. Further, the nozzle device 30 has a nozzle body 3 having two flow passages, a first flow passage that follows the flow passage 70 and a second flow passage that continues from the flow passage 80.
2, the nozzle device 30 is configured as a two-fluid mixing type ejection nozzle.

FIG. 3 is a diagram showing an example of data of dry steam and blown steam generation amount according to the present invention. FIG. 3 (I) is a diagram showing the change of the dry steam pressure during use of the process and the value of the steam generation amount due to the dry steam pressure, and FIG. 3 (I) is the nozzle device (outlet port) during use of the process. FIG. 3 is a diagram showing changes in the nozzle cross-sectional area and the value of the amount of steam generated therefrom for three types of nozzles. From the many data obtained by the inventor including these figures, it was found that the discharge amount of dry steam can be changed depending on the process conditions. The horizontal axis in FIG. 3 (II) shows the area of the nozzle blow-out portion, and each of them is 7 mm ² (only one opening or multiple openings), 7.2 mm ² (0.9 The nozzle has a structure of mm ² × 8 and 8 openings of 0.9 mm ² ) and 28 mm ² (7 mm ² × 4 and 4 openings of 7 mm ² ).

Then, from a large amount of data obtained by the inventor, the following facts have become clear in relation to the present invention. -The dry steam setting pressure is in the range of 0.1 MPa to 0.5 MPa, and good peeling or cleaning can be performed.・ The discharge amount of dry steam can be controlled by controlling the opening area of the nozzle and the set pressure of dry steam. -The temperature control of the object by dry steam can be determined by the set pressure of dry steam and the distance of the object from the nozzle.

In the apparatus shown in FIG. 2, the nozzle device 30
The blow-out body M ′ is ejected from the blow-out port 34 and is blown onto the target treatment surface 20 ′ as the blow-off body M. Regarding the blow-off body M and the blow-out body M ′, 1) the blow-off body M and the blow-out body M 'Is the same, and 2) the sprayed body M and the blowout body M'are different. To give concrete examples of these, in the case of 1), the target treated surface 20 ′ is blown out by blowing out a sprayed body in which steam (dry steam) and mist (water mist body) are mixed in advance. In the case of 2), on the other hand, in the case of 2), the pressurized water (blowout body M ') is directly blown out, and by the boiling due to the pressure drop when it is blown out, steam (dry steam) and mist are created This is a case where M is set and the target processing surface 20 ′ is sprayed.

In FIG. 2, in the steam / water supply unit 50 which is a device for generating the dry steam,
Water is heated / pressurized to generate dry steam (water vapor body), which is sent to the nozzle device 30 via the flow passage 60-regulator 40-flow passage 80. Further, DIW (high-purity water) is sent from the steam / water supply unit 50 to the nozzle device 30 through the flow path 60. Since the nozzle device 30 is configured as a two-fluid mixing jet nozzle, two types of dry steam and DIW can be separately sent. In the case of only dry steam, only dry steam is blown out from the nozzle as a blowout body (M '), and in the case of only DIW, only DIW is blown out from the nozzle as a blowout body (M'). Also, when two types of dry steam and DIW are sent, these dry steam and DIW are properly mixed, and the blowout body (M ′) consisting of dry steam and water mist body is discharged from the outlet 34. It is also possible to eject and spray the sprayed body M onto the target processing surface 20 ′. These correspond to 1) when the spray body M and the spray body M ′ are the same.

Apart from the above case, both or either of dry steam (steam body) and mist (water mist body) may be produced inside or outside the nozzle device 30. Yes, at this time, 1)
There are two cases where the sprayed body M and the blowout body M ′ are the same, and 2) the sprayed body M and the blowout body M ′ are different. That is, the nozzle device 30 is used for generating dry steam and mist, and for blowing and spraying.
If a device for separately supplying / producing dry steam and mist is provided before being sent to the nozzle device, the nozzle device 3
The blowing body M ′ and the blowing body M that come out from 0 are the same.
When water and dry steam are sent to the nozzle device 30 and then blown out to generate mist, the blowing body M ′ itself remains as water and dry steam, and mist is generated after blowing this out. Therefore, the blowing body M ′ and the blowing body M are different.

Thus, the steam / water supply unit 50
The production device and the device of the nozzle device 30 based on the above can be freely designed by appropriately sharing the roles of both when producing and supplying the steam body and the water mist body. In addition, since the production and supply of dry steam and mist can also be controlled independently, it is easy to set the formation, blending, supply amount, temperature, pressure and speed of spraying of the sprayed mixture. Can be done properly and effectively. Therefore, when spraying the sprayed body M in which dry steam and mist are mixed toward the target object, it is possible to easily obtain the configuration and control management that can efficiently implement the present invention.

As shown in the water supply apparatus of FIG. 2, this nozzle apparatus 30 sprays the sprayed body M, which is a mixture of dry steam and mist, onto the target processing surface 20 'of the target object 20 for surface treatment. This nozzle device 3
0 is generally a two-fluid mixing jet structure (method)
It is better to adopt what is called. This two-fluid mixing jet nozzle structure (method) can be modified in various ways, and the amount of supply of dry steam and mist, temperature, jet speed and pressure can be independently controlled. Since it is a device (method), it can be well adapted to various conditions.

Then, returning to FIG. 1, as is clear from the schematic structure, the spray M of dry steam and mist is directly acted on the object 20 in the nozzle device 16, so that the inside of the chamber 10 is at atmospheric pressure. -It is also possible to control the state of decompression / pressurization. Further, in that case, the temperature of the target processing surface against which the spray body M hits can also be changed by the pressure in the chamber 10. At this time, it is preferable that the dry steam is controlled to have a boiling point or higher and the mist is controlled to have a boiling point or lower, and then mixed to form a spray M. In addition,
In the steam body containing water vaporized in the gas before being mixed, the vaporized water is usually contained in the air, but it is not limited to air, and gas such as nitrogen, argon, or helium is used. It may be. The same applies to the air in the water mist body.

Next, FIG. 4 relates to the water supply method and the water supply apparatus of the present invention, and shows the weight ratio (%) of dry steam and mist to be sprayed on the target treated surface, until the resist is completely peeled off. FIG. 6 is a graph showing the relationship between resist peeling time (sec) and These data were obtained from a large number of samples, and as an example of the actually measured sample, a pure water heating device (corresponding to the steam / water supply unit 50 in FIG. 2) having a processing capacity of 400 cc / min was used.
400cc / min of pure water is heated to create a state in which mist (mist-like water) and dry steam (gaseous water) coexist, and these are passed through the nozzle device 30 to attach the resist film. When the sprayed body M is jetted from the blowing port 34 to the target object 20 which is a semiconductor wafer and a desired resist film removal result is obtained, the relationship between the stripping time and the dry steam / mist weight ratio is obtained. Can be obtained as data.

In order to obtain a graph as shown in FIG.
Using standard values as parameters other than the weight ratio (%), various experiments were conducted over a large number of samples to calculate averaged data, which is summarized as such a graph. Further, as an example of the sample at this time, the temperature of the target processing surface is around 80 to 120 ° C., and the separation distance between the outlet of the nozzle device (water) and the target processing surface is
These data can be obtained by adjusting the value to be around 8 to 12 mm.

FIG. 4 is a graph chart summarized by the inventor regarding the relationship between the resist stripping time (sec) and the weight ratio (process time dependency) according to the present invention. From the result of FIG. It was revealed that, in many of these samples, by changing the weight ratio of dry steam and mist, a gradual fluctuation of the pan bottom shape occurs in the resist stripping time. In the present invention, "only dry steam"
Or by using “dry steam + mist”, the process control range can be widened and the peeling property can be improved. Also, in this figure, the ratio of dry steam, whose weight ratio is considerably biased, is 10%.
Even if it is less than or equal to 90% or more, it is possible to perform a desired stripping process without having to increase the process time so much, and even in the case of 100% using only dry steam. It is clear that the peeling process can be performed.

From FIG. 4, the dry steam ratio is 100.
%, The stripping time is about 100 seconds, which corresponds to the case where dry steam is used alone, and the desired resist stripping effect can be obtained by taking the stripping time a little longer. all right. Of course, it is clear that the peeling time becomes shorter when the mist is added to the dry steam, but the peeling effect can be obtained by only dry steam. In this case,
Since only dry steam is required as the manufacturing equipment, there is no need to consider the mist. Therefore, there is a great effect that it is not necessary to make capital investment for production and supply of mist and technical design.

By the way, as to the manufacturing of the semiconductor device, in the peeling cleaning process using the sprayed body in which the dry steam and the mist are mixed, by changing the weight ratio of the dry steam and the mist, It is possible to remove various kinds of organic substances, resists, polymers, etc. That is, the processes of these treatments can be determined in accordance with the adhesiveness between the object to be stripped and cleaned and the wafer.

As an example of the object to be processed of the present invention, looking at the structure in which the resist film adheres to the wafer, the resist film adheres to the wafer to form a solid film layer, Its thickness is usually about 500 to 800 nm. The resist structure on the wafer is extremely effectively removed by using the water supply method and the water supply device of the present invention. The high-concentration ion-implanted resist is extremely difficult to remove by normal plasma ashing because the surface layer is denatured, but by using the water supply method and the water supply device according to the present invention, it is extremely effective. Can be removed. Further, the object is not only the removal of the resist film, but another example is a polymer residue, but this polymer residue is generated as a reaction product at the time of dry etching, and the present invention is used. As a result, this polymer residue is also very effectively removed. Both the removal of the resist film and the removal of the polymer residue can be simultaneously performed by using the invention of the present application, but in some cases, it is also possible to perform each of them separately.

Furthermore, in the water supply method and the water supply apparatus of the present invention, the supply of dry steam (a dry steam body, which often contains water vaporized in a gas) and the H ₂ O fine particles are supplied. Supply of mist including is done. Dry steam alone or a mixture of these two is used as a sprayed body, and this sprayed body is directly sprayed (sprayed) on the object processing surface (surface) to be provided to the target object. Of the sprayed bodies with steam and mist,
Steam is effective for deteriorating the resist film and the like by permeation by a gas body, and one mist has been said to be effective for exfoliating the resist film and the like by fine particles of water. It has been found that the peeling effect as shown in FIG. 4 can also be obtained by the method using dry steam alone.

As an example of the object, a base polymer basic structure for forming a resist film in the manufacture of a semiconductor device will be mentioned. This structure has porosity and hydrogen bondability, and this resist film is formed by a high temperature steam body. The body undergoes physical changes such as softening and swelling. Further, dry steam has a large resist permeability, and changes in physical properties such as swelling, separation, and solidification cause chemical structural alteration. Thus, the resist film hydrated / swelled and softened by the high-temperature water vapor body weakens the adhesive force with the wafer and comes to be peeled off. And the ejection force and ejection force of the nozzle device when providing these dry steam and mist to the target object are
It acts to be very effective in peeling the swelling resist from the wafer substrate.

Up to this point, much has been described regarding the water supply method and the water supply apparatus of the present invention regarding the removal of resist films and polymer residues that are generated as unnecessary substances in the production of semiconductor electronic devices. However, the scope of application of the present invention is not limited to this, and also includes the field of processing and surface precision processing in other electronic devices, etc. The water supply method and the water supply apparatus of the present invention are also very effective in the fields of CMP) post-cleaning, dry etching surface cleaning, fine circuit cleaning, and mask cleaning for forming fine circuits.

[0034]

As described above, in the water supply method and the water supply apparatus according to the present invention, dry steam is used.
(Dry steam) alone or dry steam (dry steam)
+ The water mist body can be properly and effectively sprayed on the object as a spray body. In the present invention, dry steam (dry water vapor) is used, whereby the peeling / removing ability of an unwanted material such as a resist film can be increased, and an efficient method and device can be realized without increasing the cost, Further, since it is dry steam, it has an excellent feature that an oxidation reaction of an object due to water is unlikely to occur. Above all, a dry steam dryness of 99% or more is particularly effective. The dry steam may be used alone, or may be used as a dry steam + water mist body. By using such dry steam, process control is easy and stability is excellent in the semiconductor manufacturing field. Especially, if only dry steam is used, there is an advantage that a lot of incidental equipment is unnecessary and the cost can be reduced with a simple design.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of the configuration of a water supply method and a water supply device according to the present invention.

FIG. 2 is a schematic view of an apparatus showing another configuration according to the present invention.

FIG. 3 (I) is a graph showing changes in dry steam pressure during use of the process according to the present invention and changes in the amount of steam generated thereby, and (II) is a nozzle device during use of the process according to the present invention. FIG. 7 is a graph showing changes in the nozzle cross-sectional area of (blowing outlet) and the value of the amount of steam generated from the nozzle.

FIG. 4 relates to a water supply method and a water supply apparatus of the present invention, in which the weight ratio (%) of dry steam and water mist to be mixed and the resist stripping time (sec) until the resist is completely stripped It is a graph figure which shows an example of a relationship.

FIG. 5 is a schematic structural diagram of steam (water vapor body) and mist (water mist body) used in the present invention.

[Explanation of symbols]

10 Processing Chamber 12 Water Supply Unit 12b Flow Control Sections 12a, 12a ', 14a, 14a', 16a Flow Paths (Lines) 14 Steam Supply Unit 14b Pressure Valve 14c Pressure Gauge 16 Nozzle Device 18 Scanning Table 22 Rotation Table 24 Ejection Part 30 Nozzle device 32 Nozzle body 40 Regulator 34 Blowout port M'Blowout body M Blowing body H Clearance (separation distance) 40 Regulator 50 Steam / water supply unit 60, 70, 80 Flow path 60a Pressure gauge 60b Pressure valve 70a Pressure Valve 60, 70, 80 Flow path 90 Flow meter

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kaori Tajima             1-10 Koyama, Sagamihara City, Kanagawa Prefecture             Mu Research Co., Ltd. (72) Inventor Kosuke Ori             1-10 Koyama, Sagamihara City, Kanagawa Prefecture             Mu Research Co., Ltd. (72) Inventor Yoichi Kanagawa             1-10 Koyama, Sagamihara City, Kanagawa Prefecture             Mu Research Co., Ltd. (72) Inventor Kazuo Nojiri             1-10 Koyama, Sagamihara City, Kanagawa Prefecture             Mu Research Co., Ltd. F term (reference) 3B201 AA02 AA03 AB34 BB13 BB38                       BB93                 5F046 MA01 MA05

Claims (5)

[Claims] 1. A water supply method for supplying water to perform a treatment including any of cleaning / peeling / processing of an object, which is a dry steam generating step for generating dry steam from water, 1). Dry steam, or, or 2) a mixture of dry steam and mist, and a spraying step of spraying from a nozzle to the flat object processing surface of the object, water is supplied to the object, A water supply method characterized by the above. 2. The water supply method according to claim 1, wherein the dry steam is dry steam having a dryness of 99% or more. 3. A water supply device for supplying water to perform a treatment including any of cleaning / peeling / processing of an object, and dry steam generating means for generating dry steam from water, 1 ) Dry steam, or 2) a nozzle means for spraying a mixture of dry steam and mist onto a flat target processing surface of the object, and is configured to supply water to the object. , A water supply device characterized by the above. 4. The water supply apparatus according to claim 3, wherein the dry steam produces dry steam having a dryness of 99% or more. 5. The water supply apparatus according to claim 4, wherein the nozzle means is configured as a two-fluid mixing type jet nozzle having a first flow path and a second flow path. And water supply equipment.