JP2018088561A - Substrate cleaning method, substrate cleaning system and memory medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To remove unnecessary objects having a small particle size and stuck to a substrate without affecting a surface of the substrate.SOLUTION: A substrate cleaning method according to an embodiment includes a film-forming processing liquid supply step, a strip-processing liquid supply step, and a dissolving-processing liquid supply step. The film-forming processing liquid supply step supplies film-forming processing liquid including a volatile component and for forming a film on a substrate, to a substrate on which a resist has not been formed yet. The strip-processing liquid supply step supplies to a processing-film obtained by solidification or cure of the film-forming processing liquid on the substrate caused by volatilization of the volatile component, strip-processing liquid for stripping the processing film from the substrate without dissolving the processing film. The dissolving-processing liquid supply step, after the strip-processing liquid supply step, supplies the processing film with dissolving-processing liquid for dissolving the processing film.SELECTED DRAWING: Figure 4

Description

  The disclosed embodiment relates to a substrate cleaning method.

  Conventionally, there has been known a substrate cleaning apparatus that removes particles adhering to a substrate such as a silicon wafer or a compound semiconductor wafer.

  As this type of substrate cleaning apparatus, there is an apparatus that removes particles by using a physical force generated by supplying a fluid such as liquid or gas to the surface of the substrate (see Patent Document 1). There is also known a substrate cleaning apparatus that supplies a chemical solution such as SC1 to the surface of a substrate and removes particles using a chemical action (for example, etching action) of the supplied chemical liquid (see Patent Document 2). .

JP-A-8-318181 JP 2007-258462 A

  However, in the technique using physical force like the technique described in Patent Document 1, it is difficult to remove unnecessary substances such as particles and polymers having a small particle diameter.

  Further, as in the technique described in Patent Document 2, in the method of removing particles using the chemical action of a chemical solution, for example, the base film of the substrate is eroded by an etching action or the like, and the surface of the substrate is affected. There was a risk of giving.

  An object of one embodiment of the present invention is to provide a substrate cleaning method capable of removing unnecessary substances having a small particle diameter attached to a substrate without affecting the surface of the substrate.

  The substrate cleaning method according to an aspect of the embodiment includes a film forming process liquid supply process, a stripping process liquid supply process, and a dissolution process liquid supply process. In the film formation treatment liquid supply step, a film formation treatment liquid that contains a volatile component and forms a film on the substrate is supplied to the substrate on which the resist is not formed. The peeling treatment liquid supply step supplies a peeling treatment liquid that peels the treatment film without dissolving the treatment film from the substrate with respect to the treatment film formed by solidifying or curing the film formation treatment liquid on the substrate by volatilization of volatile components. . In the dissolution treatment liquid supply step, a dissolution treatment solution for dissolving the treatment film is supplied to the treatment film after the peeling treatment solution supply step.

  According to one aspect of the embodiment, it is possible to remove unnecessary substances having a small particle diameter attached to the substrate without affecting the surface of the substrate.

FIG. 1A is an explanatory diagram of a substrate cleaning method according to the first embodiment. FIG. 1B is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1C is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1D is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 1E is an explanatory diagram of the substrate cleaning method according to the first embodiment. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus according to the first embodiment. FIG. 4 is a flowchart showing the processing procedure of the substrate cleaning process executed by the substrate cleaning apparatus according to the first embodiment. FIG. 5A is a diagram showing a comparison result between this cleaning method and two-fluid cleaning. FIG. 5B is a diagram showing a comparison result between this cleaning method and two-fluid cleaning. FIG. 6A is a diagram showing a comparison result between this cleaning method and chemical cleaning. FIG. 6B is a diagram showing a comparison result between this cleaning method and chemical cleaning. FIG. 7 is a schematic diagram illustrating a configuration of the substrate cleaning apparatus according to the second embodiment. FIG. 8 is a flowchart showing the processing procedure of the substrate cleaning process executed by the substrate cleaning apparatus according to the second embodiment. FIG. 9 is a schematic diagram illustrating a configuration of a substrate cleaning apparatus according to the third embodiment. FIG. 10 is a diagram showing a change in film thickness when pure water at room temperature is supplied to the topcoat film on the bare silicon wafer. FIG. 11 is a diagram showing a change in film thickness when pure water at room temperature is supplied to the topcoat film on the SiN wafer. FIG. 12 is a diagram showing a change in film thickness when heated pure water is supplied to the topcoat film on the SiN wafer. FIG. 13 is a schematic diagram illustrating a configuration of a substrate cleaning apparatus according to the fourth embodiment. FIG. 14 is a diagram illustrating an operation example of the stripping solution supply process according to the fourth embodiment. FIG. 15 is a diagram illustrating an operation example of the stripping treatment liquid supply process according to the first modification example of the fourth embodiment. FIG. 16 is a diagram illustrating an operation example of the peeling process liquid supply process according to the second modification example of the fourth embodiment. FIG. 17 is a flowchart illustrating a processing procedure for a stripping solution supply process according to a second modification example of the fourth embodiment.

  Hereinafter, embodiments of a substrate cleaning method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<Contents of substrate cleaning method>
First, the contents of the substrate cleaning method according to the first embodiment will be described with reference to FIGS. 1A to 1E. 1A to 1E are explanatory views of a substrate cleaning method according to the first embodiment.

  As shown in FIG. 1A, the substrate cleaning method according to the first embodiment includes a volatile component with respect to the pattern formation surface of a substrate such as a silicon wafer or a compound semiconductor wafer (hereinafter referred to as “wafer W”). A processing liquid for forming a film on the wafer W (hereinafter referred to as “film forming processing liquid”) is supplied.

  Here, the pattern formation surface of the wafer W has hydrophilicity, for example, by being covered with a hydrophilic film (not shown) or by being subjected to a hydrophilic treatment using ozone water or the like. ing.

  The film-forming treatment liquid supplied to the pattern formation surface of the wafer W is solidified or cured while causing volume shrinkage due to volatilization of the volatile components, thereby forming a treatment film. As a result, the pattern formed on the wafer W and the particles P adhering to the pattern are covered with the processing film (see FIG. 1B). Here, “solidification” means solidification, and “curing” means that molecules are connected to each other to be polymerized (for example, crosslinking or polymerization).

  Subsequently, as shown in FIG. 1B, the peeling treatment liquid is supplied to the treatment film on the wafer W. The peeling treatment liquid is a treatment liquid for peeling the above-described treatment film from the wafer W.

  Specifically, the peeling treatment liquid is a hydrophilic treatment liquid, and after being supplied onto the treatment film, it penetrates into the treatment film and reaches the interface of the wafer W. Since the pattern formation surface that is the interface of the wafer W has hydrophilicity, the peeling treatment liquid that has reached the interface of the wafer W penetrates the pattern formation surface that is the interface of the wafer W.

  As described above, when the peeling treatment liquid permeates between the wafer W and the treatment film, the treatment film is peeled off from the wafer W in a “film” state, and accordingly, the particles P adhering to the pattern formation surface are removed. It peels from the wafer W with a process film (refer FIG. 1C).

  Note that the film-forming treatment liquid can separate the particles P attached to the pattern or the like from the pattern or the like due to distortion (tensile force) generated by volume contraction accompanying volatilization of the volatile component.

  Subsequently, a solution for dissolving the treatment film is supplied to the treatment film peeled from the wafer W. Thereby, the treatment film is dissolved, and the particles P taken in the treatment film are in a state of floating in the dissolution treatment liquid (see FIG. 1D). After that, the particles P are removed from the wafer W by washing away the dissolution treatment liquid or the dissolved treatment film with pure water or the like (see FIG. 1E).

  As described above, in the substrate cleaning method according to the first embodiment, the processing film formed on the wafer W is peeled from the wafer W in a “film” state, so that the particles P attached to the pattern or the like are processed into the processing film. At the same time, the wafer W was removed.

  Therefore, according to the substrate cleaning method according to the first embodiment, particle removal is performed without using a chemical action, so that erosion of the underlying film due to an etching action or the like can be suppressed.

  In addition, according to the substrate cleaning method according to the first embodiment, the particles P can be removed with a weak force as compared with the conventional substrate cleaning method using physical force, so that pattern collapse can be suppressed. it can.

  Furthermore, according to the substrate cleaning method according to the first embodiment, it is possible to easily remove particles P having a small particle diameter, which are difficult to remove by the conventional substrate cleaning method using physical force. . This will be described later using a comparison result (see FIG. 5) of particle removal rates between the substrate cleaning method according to the first embodiment and the conventional substrate cleaning method using physical force.

  In the substrate cleaning method according to the first embodiment, after the processing film is formed on the wafer W, it is completely removed from the wafer W without performing pattern exposure. Therefore, the cleaned wafer W is in a state before the film-forming treatment liquid is applied, that is, a state where the pattern forming surface is exposed.

<Configuration of substrate cleaning system>
Next, the configuration of the substrate cleaning system according to the first embodiment will be described with reference to FIG. FIG. 2 is a schematic diagram illustrating a configuration of the substrate cleaning system according to the first embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 2, the substrate cleaning system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of transfer containers (hereinafter referred to as “carrier C”) that can store a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11. A substrate transfer device 121 and a delivery unit 122 are provided inside the transfer unit 12.

  The substrate transfer device 121 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 121 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 122 using a wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 13 and a plurality of substrate cleaning apparatuses 14. The plurality of substrate cleaning apparatuses 14 are provided side by side on both sides of the transport unit 13.

  The transport unit 13 includes a substrate transport device 131 inside. The substrate transfer device 131 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 131 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 122 and the substrate cleaning device 14 using a wafer holding mechanism. Transport.

  The substrate cleaning apparatus 14 is an apparatus that executes a substrate cleaning process based on the above-described substrate cleaning method. A specific configuration of the substrate cleaning apparatus 14 will be described later.

  The substrate cleaning system 1 includes a control device 4. The control device 4 is a device that controls the operation of the substrate cleaning system 1. The control device 4 is a computer, for example, and includes a control unit 15 and a storage unit 16. The storage unit 16 stores a program for controlling various processes such as a substrate cleaning process. The control unit 15 controls the operation of the substrate cleaning system 1 by reading and executing the program stored in the storage unit 16.

  Such a program may be recorded on a computer-readable storage medium and may be installed in the storage unit 16 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate cleaning system 1 configured as described above, first, the substrate transfer device 121 of the carry-in / out station 2 takes out the wafer W from the carrier C and places the taken-out wafer W on the delivery unit 122. The wafer W placed on the delivery unit 122 is taken out from the delivery unit 122 by the substrate transfer device 131 of the processing station 3 and carried into the substrate cleaning device 14, and the substrate cleaning process is performed by the substrate cleaning device 14. The cleaned wafer W is unloaded from the substrate cleaning device 14 by the substrate transfer device 131 and placed on the delivery unit 122, and then returned to the carrier C by the substrate transfer device 121.

<Configuration of substrate cleaning device>
Next, the configuration of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 3 is a schematic diagram showing the configuration of the substrate cleaning apparatus 14 according to the first embodiment.

  As shown in FIG. 3, the substrate cleaning apparatus 14 includes a chamber 20, a substrate holding mechanism 30, a liquid supply unit 40, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  The FFU 21 is connected to the downflow gas supply source 23 via the valve 22. The FFU 21 discharges downflow gas (for example, dry air) supplied from the downflow gas supply source 23 into the chamber 20.

  The substrate holding mechanism 30 includes a rotation holding unit 31, a support unit 32, and a drive unit 33. The rotation holding unit 31 is provided in the approximate center of the chamber 20. A holding member 311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 31. The wafer W is horizontally held by the holding member 311 while being slightly separated from the upper surface of the rotation holding unit 31.

  The support | pillar part 32 is a member extended in a perpendicular direction, a base end part is rotatably supported by the drive part 33, and supports the rotation holding | maintenance part 31 horizontally in a front-end | tip part. The drive unit 33 rotates the column unit 32 around the vertical axis.

  The substrate holding mechanism 30 rotates the rotation holding unit 31 supported by the column unit 32 by rotating the column unit 32 using the driving unit 33, and thereby the wafer W held by the rotation holding unit 31 is rotated. Rotate.

  The liquid supply unit 40 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30. The liquid supply unit 40 includes a nozzle 41, an arm 42 that horizontally supports the nozzle 41, and a turning lift mechanism 43 that turns and lifts the arm 42.

  The nozzle 41 is connected to an ozone water supply source 45a, a topcoat solution supply source 45b, a DIW supply source 45c, and an alkali developer supply source 45d via valves 44a to 44d, respectively. DIW is pure water at room temperature (about 23 to 25 degrees). In the present embodiment, the number of nozzles 41 in the liquid supply unit is one, but two or more nozzles may be provided. For example, four nozzles may be provided in order to individually supply different processing liquids.

  The liquid supply unit 40 is configured as described above, and supplies ozone water, topcoat liquid, DIW, or alkaline developer to the wafer W.

  Here, ozone water is an example of a hydrophilic treatment liquid that hydrophilizes the pattern forming surface of the wafer W. Instead of ozone water, for example, hydrogen peroxide water may be used as the hydrophilic treatment liquid. Further, the hydrophilic treatment may be performed using other methods such as application of a hydrophilic film such as TARC (top anti-reflecting coat), ashing, UV irradiation, and imparting a hydrophilic group of a monomolecular layer.

  The top coat liquid is an example of a film forming treatment liquid for forming a top coat film on the wafer W. The top coat film is a protective film applied to the upper surface of the resist in order to prevent the immersion liquid from entering the resist. The immersion liquid is a liquid used for immersion exposure in a lithography process, for example.

  DIW is an example of a stripping treatment liquid that strips the topcoat film from the wafer W. DIW is also used as a rinse treatment liquid in a rinse process after a dissolution treatment liquid supply process described later.

  The alkaline developer is an example of a solution for dissolving the topcoat film. The alkaline developer may contain, for example, at least one of aqueous ammonia, quaternary ammonium hydroxide solution such as tetramethylammonium hydroxide (TMAH), and choline solution.

  The collection cup 50 is disposed so as to surround the rotation holding unit 31 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the substrate cleaning apparatus 14. Further, an exhaust port 52 for discharging the downflow gas supplied from the FFU 21 to the outside of the substrate cleaning apparatus 14 is formed at the bottom of the recovery cup 50.

<Specific operation of substrate cleaning system>
Next, a specific operation of the substrate cleaning apparatus 14 will be described with reference to FIG. FIG. 4 is a flowchart showing the processing procedure of the substrate cleaning process executed by the substrate cleaning system 1 according to the first embodiment.

  As shown in FIG. 4, in the substrate cleaning apparatus 14, first, a substrate carry-in process is performed (step S101). In such a substrate carry-in process, the wafer W carried into the chamber 20 by the substrate carrying device 131 (see FIG. 2) is held by the holding member 311 of the substrate holding mechanism 30. At this time, the wafer W is held by the holding member 311 with the pattern forming surface facing upward. Thereafter, the rotation holding unit 31 is rotated by the drive unit 33. Thereby, the wafer W rotates together with the rotation holding unit 31 while being held horizontally by the rotation holding unit 31.

  Subsequently, the substrate cleaning apparatus 14 performs a hydrophilic treatment (step S102). In such a hydrophilic treatment, the nozzle 41 of the liquid supply unit 40 is located above the center of the wafer W. Thereafter, ozone water, which is a hydrophilic treatment liquid, is supplied to the pattern formation surface of the wafer W on which no resist is formed. The ozone water supplied to the wafer W spreads on the pattern forming surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the pattern formation surface of the wafer W is hydrophilized.

  In addition, when the pattern formation surface of the wafer W already has hydrophilicity, the above hydrophilic treatment may be omitted.

  Subsequently, in the substrate cleaning apparatus 14, a film forming process liquid supply process is performed (step S103). In the film forming process liquid supply process, a top coat liquid that is a film forming process liquid is supplied to the pattern forming surface of the wafer W on which no resist is formed. Thus, the top coat liquid is supplied onto the wafer W without passing through the resist.

  The top coat liquid supplied to the wafer W spreads on the surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Then, the top coat liquid is solidified or cured while causing volume shrinkage due to volatilization of the volatile components, whereby a liquid film of the top coat liquid is formed on the pattern forming surface of the wafer W.

  The topcoat liquid contains an acrylic resin having a property that the volume shrinks when solidifying or curing. As a result, volume shrinkage is caused not only by volatilization of the volatile component but also by curing shrinkage of the acrylic resin, so that the volume shrinkage rate is larger than that of the film forming treatment liquid containing only the volatile component, and the particles P are strongly separated. Can do. In particular, since the acrylic resin has a larger volume shrinkage rate than other resins such as an epoxy resin, the top coat liquid is effective in that it gives a tensile force to the particles P.

  Further, the substrate cleaning device 14 supplies a solvent having an affinity for the topcoat liquid such as MIBC (4-methyl-2-pentanol) to the wafer W before supplying the topcoat liquid to the wafer W. May be. As a result, the wettability of the pattern forming surface of the wafer W is increased, so that it becomes easy to spread the topcoat liquid on the pattern forming surface of the wafer W. Therefore, it is possible to reduce the amount of the top coat liquid used and shorten the processing time.

  Subsequently, in the substrate cleaning device 14, a drying process is performed (step S104). In such a drying process, for example, the top coat liquid is dried by increasing the rotation speed of the wafer W for a predetermined time. Thereby, volatilization of the volatile component contained in the topcoat liquid is promoted, the topcoat liquid is solidified or cured, and a topcoat film is formed on the pattern forming surface of the wafer W.

  Note that the drying process in step S104 may be, for example, a process of reducing the pressure in the chamber 20 with a decompression device (not shown), or a process of reducing the humidity in the chamber 20 with the downflow gas supplied from the FFU 21. It may be. These treatments can also promote the volatilization of volatile components.

  Here, an example in which volatilization of volatile components is promoted has been described. However, the wafer W may be waited by the substrate cleaning apparatus 14 until the topcoat liquid is naturally solidified or cured. Further, the volatilization of the volatile components is promoted by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed that does not expose the surface of the wafer W by shaking off the top coat liquid. May be.

  Subsequently, the substrate cleaning apparatus 14 performs a stripping solution supply process (step S105). In such a stripping treatment liquid supply process, DIW which is a stripping treatment liquid is supplied to the topcoat film formed on the wafer W. The DIW supplied to the top coat film spreads on the top coat film by the centrifugal force accompanying the rotation of the wafer W.

  The DIW penetrates into the top coat film and reaches the interface of the wafer W, penetrates into the interface (pattern formation surface) of the wafer W that has been hydrophilized by the hydrophilization treatment in step S102, and the top coat film passes through the wafer W. Remove from. Thereby, the particles P adhering to the pattern forming surface of the wafer W are peeled from the wafer W together with the top coat film.

  Subsequently, the substrate cleaning apparatus 14 performs a dissolution processing liquid supply process (step S106). In the dissolution processing liquid supply process, an alkaline developer that is a dissolution processing liquid is supplied to the topcoat film peeled from the wafer W. Thereby, the top coat film is dissolved.

  Note that when an alkali developer is used as the dissolution processing solution, a zeta potential having the same polarity can be generated on the wafer W and the particles P. Thereby, since the wafer W and the particle P come to repel each other, the reattachment of the particle P to the wafer W can be prevented.

  Subsequently, the substrate cleaning apparatus 14 performs a rinsing process (step S107). In such rinsing processing, DIW is supplied to the rotating wafer W, whereby the dissolved topcoat film and particles P floating in the alkaline developer are removed from the wafer W together with DIW.

  Subsequently, the substrate cleaning apparatus 14 performs a drying process (step S108). In such a drying process, for example, by increasing the rotational speed of the wafer W for a predetermined time, the DIW remaining on the surface of the wafer W is shaken off and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

  Subsequently, in the substrate cleaning apparatus 14, a substrate carry-out process is performed (step S109). In such a substrate carry-out process, the wafer W is taken out from the chamber 20 of the substrate cleaning device 14 by the substrate transfer device 131 (see FIG. 2). Thereafter, the wafer W is accommodated in the carrier C placed on the carrier placement unit 11 via the delivery unit 122 and the substrate transfer device 121. When the substrate carry-out process is completed, the substrate cleaning process for one wafer W is completed.

<Comparison with cleaning method using physical force>
Here, FIG. 5A and FIG. 5B show the comparison results between the two-fluid cleaning that is a cleaning method using physical force and the substrate cleaning method according to the first embodiment (hereinafter referred to as “the main cleaning method”). The description will be given with reference. 5A and 5B are diagrams showing a comparison result between this cleaning method and two-fluid cleaning.

  Here, FIG. 5A shows the comparison results of the particle removal rates by the respective cleaning methods in which SiO2 particles having various particle diameters are deposited on the bare silicon wafer. FIG. 5B shows particles obtained by each cleaning method when the two-fluid cleaning and the main cleaning method are performed on a wafer on which a pattern having a height of 0.5 μm and a width of 0.5 μm is formed at intervals of 1.0 μm. The comparison result of the removal rate is shown.

  First, the removal performance of the particles P having a small particle diameter will be described with reference to FIG. 5A. In FIG. 5A, the particle removal rate result when the particle diameter of the particle P is 70 nm is hatched with a left-downward slanted line, the result when it is 100 nm is shaded hatching, and the result when it is 200 nm is shown on the right side. It is indicated by hatching with a downward slanting line.

  As shown in FIG. 5A, the particle removal rate of the two-fluid cleaning was about 100% when the particle size of the particle P was 200 nm, but about 30% when the particle size was 100 nm. In the case of 70 nm, it was about 5%, which was a result of a significant decrease as the particle size decreased. Thereby, it turns out that it is difficult to remove the particle P with a small particle diameter by 2 fluid washing | cleaning.

  On the other hand, the particle removal rate of this cleaning method showed a high value of about 90 to 100% regardless of the particle diameter of the particles P. Thus, according to this cleaning method, it is possible to remove the particles P having a small particle diameter, which were difficult to remove by the two-fluid cleaning.

  Next, with reference to FIG. 5B, the removal performance of the particles P that have entered the gaps in the pattern will be described. FIG. 5B shows the results of the particle removal rate of each cleaning method when the particle P has a particle size of 200 nm and is performed under two conditions of “no damage condition” and “damage condition”. .

  Here, the “no damage condition” means that a thermal oxide film having a thickness of 2 nm is formed on the wafer and a poly-Si pattern having a height of 100 nm and a width of 45 nm is formed on the thermal oxide film, and the poly -It is a condition in which cleaning is performed with a predetermined force that does not cause the Si pattern to collapse. The “damaged condition” refers to a condition in which cleaning is performed with a predetermined force that causes the sample pattern to collapse.

  In FIG. 5B, the particle removal rate for a wafer without a pattern is indicated by hatching with a left-downward diagonal line, and the particle removal rate for a wafer with pattern is indicated by hatching with a downward-sloping diagonal line. With this cleaning method, the sample pattern did not collapse. For this reason, only the result of “no damage condition” is shown for this cleaning method.

  As shown in FIG. 5B, the particle removal rates of the main cleaning method, the two-fluid cleaning (no damage condition) and the two-fluid cleaning (damage condition) on the wafer without pattern are both close to 100%. There was no significant difference in the method.

  On the other hand, the particle removal rate of the two-fluid cleaning with respect to the wafer with the pattern was about 17% under the condition without damage and about 32% under the condition with the damage, which was significantly reduced compared with the wafer without the pattern. As described above, the particle removal rate of the wafer with the pattern is greatly reduced as compared with the case of the wafer without the pattern. Thus, it can be understood that the particle P entering the gap between the patterns is difficult to be removed by the two-fluid cleaning.

  On the other hand, this cleaning method showed a value close to 100% for a wafer with a pattern as in the case of a wafer without a pattern. Thus, since there was almost no change in the particle removal rate between the non-patterned wafer and the patterned wafer, it can be seen that the particles P that have entered the gaps in the pattern were appropriately removed by this cleaning method.

  Thus, according to the present cleaning method, the pattern P is not easily collapsed as compared with the two-fluid cleaning, and the particles P that have entered between the patterns can be appropriately removed.

<Comparison with chemical cleaning method>
Next, a comparison between chemical cleaning with SC1 (ammonia peroxide), which is a cleaning method using chemical action, and this cleaning method will be described. 6A and 6B are diagrams showing a comparison result between this cleaning method and chemical cleaning. FIG. 6A shows the comparison result of the particle removal rate, and FIG. 6B shows the comparison result of the film loss. Film loss is the erosion depth of a thermal oxide film that is a base film formed on a wafer.

  In addition, about chemical | medical solution washing | cleaning, it wash | cleaned on the conditions of temperature 60 degreeC and supply time 600 second using SC1 which mixed ammonia water, hydrogen peroxide water, and water in the ratio of 1: 2: 40, respectively. Further, as the wafer, a wafer in which patterns having a height of 0.5 μm and a width of 0.5 μm were formed at intervals of 1.0 μm was used. The particle size of the particle P is 200 nm.

  As shown in FIG. 6A, the particle removal rate by chemical cleaning is 97.5%, which is slightly lower than the particle removal rate (98.9%) of this cleaning method. In contrast, it can be seen that the particles P that have entered the gaps in the pattern are appropriately removed.

  On the other hand, as shown in FIG. 6B, as a result of chemical cleaning, a film loss of 7A (angstrom) occurred, but no film loss occurred even when this cleaning method was performed. Thus, it can be seen that this cleaning method can remove the particles P that have entered the gaps in the pattern without eroding the underlying film.

  As described above, this cleaning method appropriately removes particles P having a small particle diameter and particles entering the gaps of the pattern without affecting the surface of the substrate, such as preventing pattern collapse or erosion of the underlying film. This is more effective than the cleaning method using physical force or the cleaning method using chemical action.

  As described above, the substrate cleaning system 1 according to the first embodiment includes the film forming process liquid supply part (liquid supply part 40), the stripping process liquid supply part (liquid supply part 40), and the dissolution process liquid supply. Part (liquid supply part 40). The film forming process liquid supply unit supplies a film forming process liquid (top coat liquid) for forming a film on the wafer W containing a volatile component to the wafer W having a hydrophilic surface. The peeling treatment liquid supply unit peels the film forming treatment liquid (top coat film) from the wafer W with respect to the film forming treatment liquid (top coat film) solidified or cured on the wafer W due to volatilization of volatile components. A peeling treatment liquid (DIW) is supplied. The dissolution processing solution supply unit supplies a dissolution processing solution (alkali developer) that dissolves the film formation processing solution (topcoat film) in the solidified or cured film formation processing solution (topcoat film).

  Therefore, according to the substrate cleaning system 1 according to the first embodiment, it is possible to remove the particles P having a small particle diameter attached to the wafer W without affecting the surface of the substrate.

(Second Embodiment)
In the first embodiment described above, an example in which pure water is used as the peeling treatment liquid has been described. However, the peeling treatment liquid is not limited to pure water. For example, an alkali developer having a lower concentration than the alkali developer used as the dissolution treatment liquid may be used as the peeling treatment liquid.

  FIG. 7 is a schematic diagram illustrating a configuration of the substrate cleaning apparatus according to the second embodiment. In the following description, parts that are the same as those already described are given the same reference numerals as those already described, and redundant descriptions are omitted.

  As shown in FIG. 7, the liquid supply unit 40A included in the substrate cleaning apparatus 14A according to the second embodiment includes a first alkaline developer supply source 45e and a second alkaline developer supply source via valves 44e to 44h. 45f, a third alkaline developer supply source 45g, and a fourth alkaline developer supply source 45h, respectively.

  The first alkaline developer supply source 45e supplies an alkaline developer having a first concentration (for example, 0.1%) to the liquid supply unit 40A, and the second alkali developer supply source 45f has a second concentration (for example, for example, 0.5%) alkaline developer is supplied to the liquid supply unit 40A. The third alkaline developer supply source 45g supplies an alkaline developer having a third concentration (for example, 1.0%) to the liquid supply unit 40A, and the fourth alkaline developer supply source 45h has a fourth concentration ( For example, 2.38%) alkaline developer is supplied to the liquid supply unit 40A. In the present embodiment, the number of nozzles 41 in the liquid supply unit is one, but two or more nozzles may be provided. For example, four nozzles are provided to individually supply each type of processing liquid. In this case, the first to fourth concentration alkaline developers having different concentrations are supplied by switching the valves 44e to 44h using one of them.

  Next, a specific operation of the substrate cleaning apparatus 14A according to the second embodiment will be described with reference to FIG. FIG. 8 is a flowchart showing the processing procedure of the substrate cleaning process executed by the substrate cleaning apparatus 14A according to the second embodiment. FIG. 8 shows only the processing procedures of the stripping treatment liquid supply process and the dissolution treatment liquid supply process. The other processes are the same as the substrate cleaning process executed by the substrate cleaning apparatus 14 according to the first embodiment, and a description thereof is omitted here.

  As shown in FIG. 8, in the substrate cleaning apparatus 14A, first, an alkali developer having the first concentration supplied from the first alkali developer supply source 45e is supplied from the solution supply unit 40A to the wafer W as the peeling processing solution. (Step S201). Since the alkali developer of the first concentration has a low concentration, it can be peeled off from the wafer W with almost no dissolution of the topcoat film. For this reason, the particles P are peeled off from the wafer W together with the top coat film as in the case where DIW is used as the peeling treatment liquid.

  Subsequently, in the substrate cleaning apparatus 14A, the second concentration (> first concentration) alkali developer supplied from the second alkali developer supply source 45f is supplied from the solution supply unit 40A to the wafer W as the peeling processing solution. (Step S202). Since the second concentration alkali developer has a higher concentration than the first concentration alkali developer, the top coat film is further peeled off from the wafer W while being slightly dissolved.

  Subsequently, in the substrate cleaning apparatus 14A, a third concentration (> second concentration) alkali developer supplied from the third alkali developer supply source 45g is supplied from the solution supply unit 40A to the wafer W as a dissolution processing solution. (Step S203). Since the third concentration alkali developer has a higher concentration than the second concentration alkali developer, the top coat film peeled off from the wafer W is dissolved with a higher dissolving power than the second concentration alkali developer.

  Further, in the substrate cleaning apparatus 14A, an alkaline developer having a fourth concentration (> third concentration) supplied from the fourth alkali developer supply source 45h is supplied from the solution supply unit 40A to the wafer W as a dissolution processing solution ( Step S204). The alkali developer of the fourth concentration has a higher concentration than the alkali developer of the third concentration, and dissolves the topcoat film with a higher dissolving power than the alkali developer of the third concentration.

  As described above, an alkali developer having a lower concentration than the alkali developer supplied in the dissolution treatment solution supply process may be supplied to the top coat film as a peeling treatment solution. In such a case as well, the topcoat film can be peeled from the wafer W in the same manner as when DIW is used as the peeling treatment liquid.

  Further, in the substrate cleaning apparatus 14A according to the second embodiment, the concentration of the alkali developer supplied in the stripping solution supply process is low within a range not exceeding the concentration of the alkali developer supplied in the dissolution processing solution supply process. The concentration was changed from high to high. Thereby, since the top coat film can be dissolved in parallel with the peeling of the top coat film, the time required for the substrate cleaning process can be shortened.

  In the substrate cleaning apparatus 14A according to the second embodiment, the concentration of the alkaline developer is changed from a low concentration to a high concentration in the dissolution processing solution supply processing. For this reason, the film residue of the topcoat film on the wafer W can be prevented as compared with the case where a high-concentration alkaline developer is suddenly supplied as the dissolution treatment liquid.

  Here, in the stripping solution supply process, the first concentration of alkali developer is first supplied to the topcoat film. However, before supplying the first concentration of alkali developer, DIW is supplied. May be.

  Here, in the stripping treatment liquid supply process and the dissolution processing liquid supply process, the alkali developer is supplied in two stages. However, the stripping processing liquid supply process and the dissolution processing liquid supply process are the same as those in the alkaline developer. Supply may be performed in three or more stages. Moreover, you may supply the alkali developing solution of any one of a peeling process liquid supply process and a melt | dissolution process liquid supply process in one step.

  Further, here, an example in which the liquid supply unit 40A is connected to a plurality of supply sources (first alkaline developer supply source 45e to fourth alkaline developer supply source 45h) that supply alkaline developer of each concentration. However, for example, the liquid supply unit 40A may be configured to be connected only to the fourth alkaline developer supply source 45h that supplies an alkaline developer having a fourth concentration.

  In such a case, the substrate cleaning device 14A supplies the fourth concentration alkaline developer and DIW from the nozzle 41 at the same time, thereby supplying the wafer W with a lower concentration alkaline developer than the fourth concentration alkaline developer. be able to. The substrate cleaning apparatus 14 </ b> A can supply the alkali developer of the first concentration to the fourth concentration to the wafer W by adjusting the flow rate of DIW.

  In addition, here, the alkaline developer of each concentration is used for the stripping treatment solution and the dissolution treatment solution, but an IPA aqueous solution (mixed solution of IPA and pure water) of each concentration may be used. In this case, a low-concentration IPA aqueous solution is supplied stepwise in the peeling treatment liquid supply processing, and a high-concentration IPA aqueous solution is supplied stepwise in the dissolution treatment liquid supply processing.

(Third embodiment)
In each of the above-described embodiments, an example in which a plurality of processing liquids such as a top coat liquid and an alkali developer are supplied from the nozzle 41 of one arm has been described. However, the substrate cleaning apparatus includes nozzles in a plurality of arms. May be. Hereinafter, an example in which the substrate cleaning apparatus includes nozzles in a plurality of arms will be described with reference to FIG. FIG. 9 is a schematic diagram illustrating a configuration of a substrate cleaning apparatus according to the third embodiment.

  As shown in FIG. 9, the substrate cleaning apparatus 14B according to the third embodiment includes a first liquid supply unit 40B and a second liquid supply unit 40C.

  The first liquid supply unit 40B includes a nozzle 41a, an arm 42a that horizontally supports the nozzle 41a, and a turning lift mechanism 43b that turns and lifts the arm 42a. Similarly, the second liquid supply unit 40C includes a nozzle 41b, an arm 42b that horizontally supports the nozzle 41b, and a turning lift mechanism 43c that turns and lifts the arm 42b.

  The nozzle 41a included in the first liquid supply unit 40B is connected to the ozone water supply source 45a and the DIW supply source 45c via valves 44a and 44c, and the nozzle 41b included in the second liquid supply unit 40C includes the valve 44b. , 44d to the top coat liquid supply source 45b and the alkaline developer supply source 45d.

  As described above, the substrate cleaning device 14B may supply ozone water, top coat liquid, DIW, and alkaline developer separately to the nozzles 41a and 41b of the plurality of arms.

  Here, when the concentration of the alkaline developer is changed as in the substrate cleaning apparatus 14B according to the second embodiment, the second liquid is supplied while supplying DIW from the nozzle 41a included in the first liquid supply unit 40B. What is necessary is just to supply alkaline developing solution from the nozzle 41b with which the supply part 40C is provided. In such a case, the alkali developer and DIW are mixed on the wafer W, and a low-concentration alkali developer is generated on the wafer W.

  Here, the substrate cleaning apparatus 14B includes two liquid supply units (the first liquid supply unit 40B and the second liquid supply unit 40C), but a plurality of nozzles are provided for one liquid supply unit. May be.

(Fourth embodiment)
By the way, if pure water at room temperature is used as the peeling treatment liquid, the top coat film cannot be sufficiently peeled depending on the type of the undercoat on the wafer surface, and sufficient particle removal performance may not be obtained. For example, it was found that when a SiN wafer having a SiN (silicon nitride) film formed on the wafer surface is used as a processing target, if pure water at room temperature is used as a stripping treatment liquid, the topcoat film is not sufficiently stripped. In the fourth embodiment, as a countermeasure against this point, an example in which heated pure water is used as a peeling treatment liquid will be described.

  First, the peelability of the top coat film on the bare silicon wafer will be described with reference to FIG. FIG. 10 is a diagram showing a change in film thickness when pure water at room temperature is supplied to the topcoat film on the bare silicon wafer.

  Here, the horizontal axis of the graph shown in FIG. 10 indicates the position (wafer diameter) on the bare silicon wafer, the center position of the bare silicon wafer having a diameter of 150 mm is set to 0, and both end positions are set to −150 and 150, respectively. Yes. The vertical axis of the graph shown in FIG. 10 indicates the film thickness of the top coat film, and the value indicates the ratio of each film thickness to the film thickness after the top coat film is formed. In FIG. 10, the film thickness before forming the top coat film is indicated by a solid line L1, the film thickness after forming the top coat film is indicated by a broken line L2, and the film thickness after supplying pure water at room temperature is indicated by the alternate long and short dash line L3. Each is shown. Here, pure water at room temperature (hereinafter referred to as “CDIW”) refers to pure water at 23 ° C., for example.

  As shown in FIG. 10, the film thickness after the CDIW is supplied (the one-dot chain line L3) substantially matches the film thickness before the top coat film is formed (solid line L1). That is, the topcoat film formed on the bare silicon wafer is peeled off favorably by CDIW.

  Next, the peelability of the top coat film on the SiN wafer will be described with reference to FIGS. FIG. 11 is a diagram showing a change in film thickness when pure water at room temperature is supplied to the topcoat film on the SiN wafer. FIG. 12 is a diagram showing a change in film thickness when heated pure water is supplied to the top coat film on the SiN wafer.

  In FIG. 11, the film thickness before forming the top coat film is indicated by a solid line L4, the film thickness after forming the top coat film is indicated by a broken line L5, and the film thickness after supplying pure water at room temperature is indicated by an alternate long and short dash line L6. Each is shown. Further, in FIG. 12, in addition to the above L4 and L5, the film thickness of the SiN wafer after supplying heated pure water is indicated by a two-dot chain line L7. Here, the heated pure water (hereinafter referred to as “HDIW”) refers to pure water heated to 75 ° C., for example. Here, the SiN wafer refers to, for example, a wafer in which a SiN film is formed on the surface of a bare silicon wafer.

  As shown in FIG. 11, the film thickness after supply of CDIW (dashed line L6) substantially matches the film thickness of the SiN wafer before forming the top coat film (solid line L4) only at the outer peripheral portion of the SiN wafer. . In other words, when CDIW is used as the stripping treatment liquid when a SiN wafer is a processing target, the top coat film remains on the SiN wafer.

  Thus, when the SiN wafer is the processing target, the peelability of the topcoat film is reduced as compared with the case where the bare silicon wafer is the processing target. As one of the causes, it is considered that the pure water hardly reaches the interface between the top coat film and the SiN wafer because the top coat film is chemically bonded to the SiN film. The reason why the top coat film is peeled off at the outer peripheral portion of the SiN wafer is considered to be because pure water enters from the interface between the bevel portion of the SiN wafer and the top coat film.

  On the other hand, as shown in FIG. 12, the film thickness (two-dot chain line L7) of the SiN wafer after supplying HDIW is compared with the case where CDIW is used as the stripping treatment liquid (one-dot chain line L6, see FIG. 11). In addition, a portion that matches the film thickness (solid line L4) of the SiN wafer before forming the top coat film increases. That is, by using HDIW as the peeling treatment liquid, the peelability of the topcoat film is improved as compared with the case of using CDIW.

  As described above, when the SiN wafer is a processing target, the peelability of the topcoat film can be improved by using HDIW as the peeling treatment liquid.

  However, as shown in FIG. 12, even when HDIW is used as the stripping treatment liquid, the topcoat film remains on the SiN wafer. In particular, more topcoat film remains in the central portion of the SiN wafer than in the outer peripheral portion. Therefore, an example of an HDIW supply method for further improving the peelability of the topcoat film will be described below.

  FIG. 13 is a schematic diagram illustrating a configuration of a substrate cleaning apparatus according to the fourth embodiment. As shown in FIG. 13, a substrate cleaning apparatus 14C according to the fourth embodiment includes a liquid supply unit 40D. The liquid supply unit 40D is connected to the peeling processing DIW supply source 45i via a valve 44i and a heater 46i. The liquid supply unit 40D is connected to a rinse processing DIW supply source 45j through a valve 44j and a heater 46j.

  DIW supplied from the DIW supply source 45i for peeling treatment is room temperature pure water used for the peeling treatment. Here, room temperature pure water supplied from the DIW supply source 45i for peeling treatment is heated to 75 ° C. by the heater 46i, and heated pure water (HDIW) is supplied via the valve 44i. The DIW supplied from the DIW supply source 45j for rinsing processing is pure water at room temperature used for the rinsing processing. Here, room temperature pure water supplied from the DIW supply source 45j for rinsing treatment is heated to a temperature lower than 75 ° C., for example, 50 ° C. by the heater 46j, and the heated pure water (HDIW) is passed through the valve 44j. Shall be supplied.

  As described above, the substrate cleaning apparatus 14C includes the separation processing DIW supply source 45i for supplying DIW for the separation processing liquid, in addition to the rinsing processing DIW supply source 45j for supplying the DIW for rinsing processing. Here, an example in which the HDIW for peeling treatment and the HDIW for rinsing treatment heated by the heaters 46i and 46j are discharged from a single nozzle 41 will be described. However, the substrate cleaning apparatus 14C uses the HDIW for peeling treatment. And a nozzle that discharges HDIW for rinsing treatment.

  Note that the temperature of the HDIW for peeling treatment and the temperature of the HDIW for rinsing treatment may be the same. Further, the rinsing process may be performed using CDIW instead of HDIW.

  Next, an operation example of the stripping solution supply process using the substrate cleaning apparatus 14C will be described with reference to FIG. FIG. 14 is a diagram illustrating an operation example of the stripping solution supply process according to the fourth embodiment.

  As shown in FIG. 14, the substrate cleaning apparatus 14C moves the nozzle 41 from the central portion of the SiN wafer W ′ toward the outer peripheral portion using the swivel raising / lowering mechanism 43 while applying the top coat film on the SiN wafer W ′. Supply HDIW.

  Thus, the liquid supply unit 40D (corresponding to an example of “peeling treatment liquid supply unit”) includes a nozzle 41 that supplies HDIW, and a swivel lifting mechanism 43 that moves the nozzle 41 (corresponding to an example of “moving mechanism”). With. Then, the substrate cleaning apparatus 14 </ b> C supplies the HDIW from the nozzle 41 to the topcoat film while moving the nozzle 41 using the turning lift mechanism 43.

  When such a scanning operation is performed, an impact is applied to the topcoat film, and the bond between the topcoat film and the SiN film is weakened. This makes it easier for the HDIW to reach the interface between the topcoat film and the SiN wafer W ′, and thus the peelability of the topcoat film can be improved.

  In the fourth embodiment, the “impact” is an impact with a predetermined force that does not cause the pattern to collapse. Therefore, even if the peeling process described in the fourth embodiment is performed, there is no possibility of pattern collapse.

  Here, the substrate cleaning apparatus 14C may scan the nozzle 41 from the center portion of the SiN wafer W ′ to the outermost peripheral portion. For example, the central portion of the SiN wafer W ′ where a large amount of the topcoat film remains is observed. Only the remaining area 201 including the scan may be scanned. Thereby, the processing time of the peeling process supply process can be shortened. Note that the range of the remaining region 201 can be determined based on the graph shown in FIG. For example, the remaining area 201 can be in the range of −85 to 85 mm.

  Further, the substrate cleaning apparatus 14 </ b> C may vary the scanning speed of the nozzle 41 between the peeling region 202 including the outer peripheral portion of the SiN wafer W ′ from which the topcoat film is peeled well and the remaining region 201. For example, the substrate cleaning apparatus 14 </ b> C may increase the scan speed of the nozzle 41 in the remaining area 201 as compared with the scan speed of the nozzle 41 in the peeling area 202. By increasing the scanning speed, the number of times the top coat film is impacted per unit time increases, so that the peelability of the top coat film in the remaining region 201 can be further improved.

  Here, the nozzle 41 is moved from the central portion of the SiN wafer W ′ toward the outer peripheral portion. However, the substrate cleaning apparatus 14C moves the nozzle 41 toward the central portion from the outer peripheral portion of the SiN wafer W ′. It may be moved.

  Further, while the HDIW is being supplied, the rotational speed of the wafer W may be controlled at a higher speed than the period during which other processing is performed. For example, while the film forming process liquid supply process is being performed, the rotation speed may be 1000 rpm, while while the HDIW is being supplied, the rotation speed may be 1500 rpm. Accordingly, the peeled processing film is quickly shaken off from the wafer W, and the HDIW easily penetrates into the non-peeled processing film, so that the peeling process is promoted.

  Next, a first modification of the stripping process liquid supply process according to the fourth embodiment will be described with reference to FIG. FIG. 15 is a diagram illustrating an operation example of the stripping treatment liquid supply process according to the first modification example of the fourth embodiment.

  As shown in FIG. 15, the stripping treatment liquid supply process may be performed using a bar nozzle 41c. The bar nozzle 41c is, for example, a rod-like nozzle extending in the radial direction of the SiN wafer W ', and includes a plurality (here, four) of discharge ports 41c1 to 41c4 at the lower part. The discharge ports 41c1 to 41c4 have, for example, the same diameter and are arranged side by side with a predetermined interval along the longitudinal direction of the bar nozzle 41c. The bar nozzle 41c is supported by, for example, an arm 42 (see FIG. 13).

  Among the discharge ports 41c1 to 41c4 provided in the bar nozzle 41c, the discharge ports 41c1 and 41c2 are disposed at positions facing the remaining region 201 of the SiN wafer W ′, and the discharge ports 41c3 and 41c4 are disposed at positions facing the peeling region 202. Is done. The discharge ports 41c1 and 41c2 are connected to a first HDIW supply source 45k via a valve 44k, and the discharge ports 41c3 and 41c4 are connected to a second HDIW supply source 45l via a valve 44l. . The discharge ports 41c1 and 41c2 may be connected to the first DIW supply source via the valve 44k and the first heater. Similarly, the discharge ports 41c3 and 41c4 may be connected to the second DIW supply source via the valve 44l and the second heater.

  The bar nozzle 41c configured as described above supplies the HDIW supplied from the first HDIW supply source 45k to the remaining region 201 of the SiN wafer W ′ from the discharge ports 41c1 and 41c2. The bar nozzle 41c supplies the HDIW supplied from the second HDIW supply source 45l to the peeling region 202 of the SiN wafer W ′ from the discharge ports 41c3 and 41c4.

  Here, in the bar nozzle 41c, the flow rate of HDIW supplied from the first HDIW supply source 45k to the discharge ports 41c1 and 41c2 is greater than the flow rate of HDIW supplied from the second HDIW supply source 45l to the discharge ports 41c3 and 41c4. There are also many. For this reason, the flow rate of HDIW supplied from the discharge ports 41c1 and 41c2 to the remaining region 201 is higher than the flow rate of HDIW supplied from the discharge ports 41c3 and 41c4 to the peeling region 202. Thereby, compared with the topcoat film in the peeling region 202, a stronger impact is applied to the topcoat film in the remaining region 201, so that the peelability of the topcoat film in the remaining region 201 can be improved.

  As described above, the liquid supply unit 40D (corresponding to an example of the “peeling process liquid supply unit”) has a plurality of discharge ports 41c1 to 41c4 arranged side by side along the radial direction of the SiN wafer W ′. The bar nozzle 41c having Then, the liquid supply unit 40D includes the central portion of the SiN wafer W ′ compared to the flow rate of HDIW discharged from the discharge ports 41c3 and 41c4 facing the peeling region 202 including the outer peripheral portion of the SiN wafer W ′. The flow rate of HDIW discharged from the discharge ports 41c1 and 41c2 facing the region 201 was increased. For this reason, the peelability of the topcoat film in the remaining region 201 can be improved.

  Here, the discharge ports 41c1 to 41c4 have the same diameter, and the flow rate of HDIW supplied to the discharge ports 41c1 and 41c2 is made larger than the flow rate of HDIW supplied to the discharge ports 41c3 and 41c4. However, the present invention is not limited to this, and the flow rates of the HDIW supplied to the discharge ports 41c1 to 41c4 may be the same, and the diameters of the discharge ports 41c1 and 41c2 may be smaller than the diameters of the discharge ports 41c3 and 41c4. Even in this case, the flow rate of HDIW supplied from the discharge ports 41c1 and 41c2 to the remaining region 201 can be made higher than the flow rate of HDIW supplied from the discharge ports 41c3 and 41c4 to the separation region 202.

  Next, a second modification of the stripping process liquid supply process according to the fourth embodiment will be described with reference to FIG. FIG. 16 is a diagram illustrating an operation example of the peeling process liquid supply process according to the second modification example of the fourth embodiment.

  As shown in FIG. 16, the nozzle 41d according to the second modification is a two-fluid nozzle, and is connected to the HDIW supply source 45m via the valve 44m and is connected to the gas supply source 45n via the valve 44n. The For example, an inert gas such as nitrogen is supplied from the gas supply source 45n. The nozzle 41 d may be provided on the arm 42 separately from the nozzle 41 shown in FIG. 13, for example, or may be provided on the arm 42 instead of the nozzle 41. The nozzle 41d may be connected to a DIW supply source via a valve 44m and a heater.

  The HDIW and inert gas supplied to the nozzle 41d are mixed in the nozzle 41d and supplied from the nozzle 41d to the topcoat film on the SiN wafer W '. In this way, by using the nozzle 41d, which is a two-fluid nozzle, in the stripping liquid supply process, the mixed fluid discharged from the nozzle 41d can give an impact to the topcoat film and improve the peelability of the topcoat film. Can be made.

  Here, a specific operation of the stripping process liquid supply process using the nozzle 41d which is a two-fluid nozzle will be described with reference to FIG. FIG. 17 is a flowchart illustrating a processing procedure for a stripping solution supply process according to a second modification example of the fourth embodiment.

  As shown in FIG. 17, in the peeling processing liquid supply process according to the second modification, first, a two-fluid scanning process is performed (step S301), and then an HDIW scanning process is performed (step S302). In the two-fluid scanning process, a mixed fluid of HDIW and inert gas is applied from the nozzle 41d to the top coat film on the SiN wafer W ′ while moving the nozzle 41d from the center to the outer periphery of the SiN wafer W ′. It is a process to supply. The HDIW scan process is a process for supplying only HDIW from the nozzle 41d to the topcoat film on the SiN wafer W ′ while moving the nozzle 41d from the center to the outer periphery of the SiN wafer W ′. .

  The two-fluid scanning process has a relatively strong impact on the topcoat film on the SiN wafer W ', and therefore there is a concern about pattern collapse. Therefore, in the peeling treatment liquid supply process according to the second modification, the HDIW scan process is performed after the two-fluid scan process is performed for a short time. Thereby, the peelability of the topcoat film can be enhanced while preventing pattern collapse. Note that the processing time of the two-fluid scanning process is set shorter than the processing time of the HDIW scanning process. Further, the time is such that the HDIW sufficiently penetrates into the top coat film but the film itself does not start to peel off.

  Thus, the liquid supply unit 40D (corresponding to an example of the “peeling process liquid supply unit”) includes the nozzle 41d that is a two-fluid nozzle. The liquid supply unit 40D supplies the mixed fluid from the nozzle 41d to the topcoat film, and then supplies HDIW from the nozzle 41d to the topcoat film. Thereby, the peelability of the topcoat film can be improved.

  Note that the two-fluid scanning process and the HDIW scanning process may be performed only on the remaining area 201. Alternatively, the two-fluid scanning process may be performed only on the remaining area 201 and the HDIW scanning process may be performed on both the remaining area 201 and the peeling area 202. On the contrary, the two-fluid scanning process may be performed on both the remaining area 201 and the peeling area 202, and the HDIW scanning process may be performed only on the remaining area 201.

  Further, in order to suppress the impact of the two-fluid scanning process, the interval between the nozzle 41d and the SiN wafer W ′ in the two-fluid scanning process may be larger than the spacing between the nozzle 41d and the SiN wafer W ′ in the HDIW scanning process. Good.

  Here, an example in which the nozzle 41d discharges a mixed fluid of HDIW and an inert gas has been shown. However, the mixed fluid discharged from the nozzle 41d is a liquid other than HDIW and a gas other than an inert gas. It may be a mixed fluid.

  In the fourth embodiment, the SiN wafer W ′ has been described as an example of a wafer to be processed. However, pure water heated as a stripping treatment liquid also when a wafer other than the SiN wafer W ′ is to be processed. By using, it is possible to improve peelability.

(Other embodiments)
In the first to fourth embodiments described above, the film forming process liquid supply process and the dissolution process liquid supply process are performed in the same chamber. May be performed in a separate chamber. In such a case, for example, a first substrate cleaning apparatus that performs steps S101 (substrate carrying-in processing) to S104 (drying processing) shown in FIG. 4 and steps S105 (peeling solution supply processing) to S109 (substrate carrying-out processing) shown in FIG. The second substrate cleaning apparatus that performs () may be disposed in the processing station 3 shown in FIG. Further, the peeling treatment liquid supply process and the dissolution treatment liquid supply process may be performed in separate chambers. The first substrate cleaning apparatus is provided in another processing station, and the wafer W after the film forming process liquid supply process is performed is placed on the carrier mounting unit 11. In the second substrate cleaning apparatus of the processing station 3, You may make it perform a melt | dissolution process liquid supply process.

  Further, in the first and third embodiments described above, an example in which liquid DIW is used as a peeling treatment liquid has been described. However, the peeling treatment liquid may be a mist DIW.

  Further, in each of the embodiments described above, an example in which DIW is directly supplied to the topcoat film by using a nozzle has been described. However, for example, by increasing the humidity in the chamber using a humidifier or the like, the top DIW may be indirectly supplied to the coating film.

  Further, in each of the embodiments described above, an example has been described in which a topcoat solution is used as the film forming solution and DIW or a low-concentration alkali developer is used as the stripping solution. However, the combination of the film-forming treatment liquid and the separation treatment liquid is not limited as long as it is a combination capable of performing the process of removing the treatment film formed on the wafer W without dissolving it (or before dissolving it). For example, the stripping treatment liquid is CO2 water (DIW mixed with CO2 gas), an acid or alkaline aqueous solution, a surfactant-added aqueous solution, a fluorine-based solvent such as HFE (hydrofluoroether), diluted IPA (diluted with pure water) IPA: isopropyl alcohol) may be included.

  Further, when a topcoat liquid is used as the film forming treatment liquid, the substrate cleaning apparatus may use, for example, MIBC (4-methyl-2) as a solvent having an affinity for the topcoat liquid before performing the film forming liquid supply process. -Pentanol) may be supplied to the wafer W. MIBC is contained in the topcoat solution and has an affinity for the topcoat solution. In addition, as a solvent having an affinity for the top coat liquid other than MIBC, for example, PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), or the like may be used.

  Thus, by spreading MIBC having an affinity for the topcoat liquid on the wafer W in advance, the topcoat liquid is likely to spread on the upper surface of the wafer W in the film formation liquid supply process described later, It becomes easy to enter the gap between the patterns. Therefore, it is possible to reduce the amount of the top coat liquid used and more reliably remove the particles P that have entered the gaps in the pattern. Further, it is possible to shorten the processing time of the film forming process liquid supply process.

  Further, in each of the embodiments described above, an example in which an alkaline developer is used as the dissolution processing solution supply processing has been described. However, the dissolution processing solution is obtained by adding hydrogen peroxide to an alkaline developer. May be. Thus, by adding hydrogen peroxide water to the alkaline developer, surface roughness of the wafer surface due to the alkaline developer can be suppressed.

  Further, the dissolution treatment liquid may be an organic solvent such as MIBC (4-methyl-2-pentanol), thinner, toluene, acetate esters, alcohols, glycols (propylene glycol monomethyl ether), or acetic acid. Further, an acidic developer such as formic acid or hydroxyacetic acid may be used.

  Furthermore, the dissolution treatment liquid may contain a surfactant. Since the surfactant has a function of weakening the surface tension, reattachment of the particles P to the wafer W or the like can be suppressed. The unnecessary object to be removed is not limited to particles, and may be other substances such as a polymer remaining on the substrate after dry etching or ashing.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W Wafer P Particle 1 Substrate cleaning system 2 Loading / unloading station 3 Processing station 4 Controller 14 Substrate cleaning device 20 Chamber 21 FFU
30 Substrate holding mechanism 40 Liquid supply unit 45a Ozone water supply source 45b Topcoat liquid supply source 45c DIW supply source 45d Alkali developer supply source 45e First alkali developer supply source 45f Second alkali developer supply source 45g Third alkali development Liquid supply source 45h Fourth alkali developer supply source 50 Recovery cup

Embodiments disclosed herein relate to a substrate cleaning method , a substrate cleaning system, and a storage medium .

An object of one embodiment is to provide a substrate cleaning method , a substrate cleaning system, and a storage medium that can remove unnecessary substances having a small particle diameter attached to the substrate without affecting the surface of the substrate. To do.

Substrate cleaning method according to an aspect of the embodiment includes a film-forming treatment liquid supplying step, a release treatment liquid supplying step. In the film formation treatment liquid supply step, a film formation treatment liquid that contains a volatile component and forms a film on the substrate is supplied to the substrate on which the resist is not formed. The peeling treatment liquid supply step supplies a peeling treatment liquid that peels the treatment film without dissolving the treatment film from the substrate with respect to the treatment film formed by solidifying or curing the film formation treatment liquid on the substrate by volatilization of volatile components. .

Hereinafter, embodiments of a substrate cleaning method , a substrate cleaning system, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

Claims (1)

A film-forming treatment liquid supply step for supplying a film-forming treatment liquid containing a volatile component to form a film on the substrate to the substrate on which the resist is not formed;
A stripping process for supplying a stripping treatment liquid for stripping the treatment film without dissolving the treatment film from the substrate with respect to a treatment film formed by solidifying or curing the film deposition treatment liquid on the substrate by volatilization of the volatile component. A liquid supply process;
A substrate cleaning method comprising: after the stripping treatment liquid supplying step, supplying a dissolving treatment liquid for dissolving the treatment film in the treatment film.

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