JP2008060368A - Method and device for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and device for processing a substrate capable of properly removing a resist that comprises a solidified layer from a substrate while suppressing or avoiding damages on the substrate or a thin film formed on its surface. <P>SOLUTION: A polysilicon thin film pattern 41 and a resist pattern 42 are formed on the surface of a substrate W. The resist pattern 42 comprises a solidified layer 43 on its surface. A region on the surface of the substrate W where the resist pattern 42 is not formed is covered with a protective resist film 45. Then, by a CMP treatment using a polishing pad 24, a solidified layer breaking process is performed which breaks the solidified layer 43. After the solidified layer breaking process, the resist pattern 42 and the protective resist film 45 are removed from the surface of the substrate W using a resist separation agent. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for removing a resist from a substrate on which a resist (photoresist) pattern having a hardened layer is formed. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo A mask substrate is included.

  In the manufacturing process of a semiconductor device, a resist pattern is formed on a semiconductor substrate (for example, a silicon substrate), and a process of implanting impurity ions into the semiconductor substrate using the resist pattern as a mask is performed. At the time of ion implantation, the resist surface is carbonized and deteriorated to form a hardened layer. This hardened layer becomes stronger as the dose is increased, and it is difficult to be decomposed by the oxidation treatment or dissolved by the solvent. As a result, the resist stripping treatment after the ion implantation treatment becomes difficult.

The resist stripping process includes an ashing process for ashing and removing the hardened layer with oxygen plasma, followed by a resist stripping solution (for example, SPM solution (sulfuric acid / hydrogen peroxide solution mixed solution)) or SC1 (ammonia / hydrogen peroxide solution). Generally, it is performed by a wet cleaning process using a cleaning liquid such as a mixed liquid).
JP 2005-93926 A JP 2005-39205 A

However, during the ashing process, a semiconductor substrate exposed to oxygen plasma and a surface layer portion of a thin film pattern (for example, a polysilicon thin film pattern) formed on the surface thereof are oxidized. The oxidized portion is removed by the processing liquid used in the subsequent wet cleaning process. Thus, the semiconductor substrate and the thin film pattern are damaged.
It has also been proposed to perform a resist stripping process only by a wet process without performing an ashing process. However, there is a problem in that it is difficult to break the hardened layer of the resist surface layer portion after the high dose ion implantation process only by the wet process, and it is difficult to achieve a good peeling process.

  Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of satisfactorily removing a resist having a cured layer from a substrate while suppressing or avoiding damage to the substrate or a thin film formed on the surface thereof. It is to be.

  The invention according to claim 1 for achieving the above object is a substrate processing method for removing a resist (42) having a hardened layer (43) from a substrate (W) having a pattern formed on the surface thereof. A protective film forming step of covering a region of the substrate surface where the resist pattern is not formed with a protective film (45), and a hardened layer destruction for breaking the hardened layer after the protective film forming step A substrate processing method including a step and a cleaning step of removing the resist and the protective film from the substrate surface with a processing liquid after the cured layer breaking step. The alphanumeric characters in parentheses indicate corresponding components in the embodiments described later. The same applies hereinafter.

  According to this method, a protective film is formed on a region of the substrate surface that is not covered with the resist (preferably, the entire region of the substrate surface where the resist is not formed), and the protective film protects the surface of the substrate. The In this state, the hardened layer of the resist is destroyed, and thereafter, a cleaning process is performed to remove the resist and the protective film from the substrate by liquid processing using a processing liquid. In the hardened layer destruction step, it is possible to suppress or prevent the surface of the substrate from being damaged by the function of the protective film. In this way, the cured layer can be destroyed while suppressing or avoiding damage to the substrate or the thin film formed on the surface thereof, so that the resist can be satisfactorily removed from the substrate without damaging the substrate or the like by subsequent liquid treatment. Can be removed.

  A second aspect of the present invention is the substrate processing method according to the first aspect, wherein the substrate is a substrate after being subjected to an ion implantation process using the resist pattern as a mask. When a resist pattern is used as a mask for ion implantation, a hardened layer is formed on the surface of the resist, particularly after high dose ion implantation. If this invention is applied when performing resist stripping treatment on such a substrate, the hardened layer is destroyed while suppressing or avoiding damage to the substrate or the thin film formed on the surface thereof, and then the subsequent liquid treatment The resist and the protective film can be removed from the substrate surface.

  A third aspect of the present invention is the substrate processing method according to the first or second aspect, wherein the substrate is a substrate having a thin film pattern formed on a surface thereof. In this method, the thin film pattern formed on the substrate can be protected by the protective film. Therefore, it is possible to suppress or avoid the occurrence of damage to the thin film pattern in the hardened layer breaking step. In this way, while suppressing damage to the thin film pattern, the cured layer of the resist can be destroyed, and the resist on the substrate can be easily removed by subsequent liquid treatment.

Since the resist is an organic material, if the thin film pattern is made of an inorganic material (for example, polysilicon), the resist can be easily removed without damaging the thin film pattern in the cleaning process.
A fourth aspect of the present invention is the substrate processing method according to the third aspect, wherein, in the protective film forming step, the protective film is formed so as to fill a region around the thin film pattern. In this method, since the protective film is formed so as to fill the area around the thin film pattern (the area where the thin film pattern is not formed, especially the area between the thin film patterns), the pattern collapse of the thin film pattern occurs in the hardened layer destruction process. Can be prevented. Therefore, the resist stripping process can be performed while protecting the thin film pattern.

In order to more effectively suppress or prevent the collapse of the thin film pattern, the protective film is formed with a thickness having a surface at a position higher than the top surface of the thin film pattern (position where the height from the substrate surface is high). It is preferable.
Invention of Claim 5 WHEREIN: The said protective film formation process includes the process of forming the said protective film with the thickness which embeds the hardened layer of the said resist, The board | substrate as described in any one of Claims 1-4 It is a processing method. In this method, since the protective film is formed with a thickness for burying the hardened layer of the resist, the surface of the substrate in the region where the resist pattern is not formed can be reliably protected with the protective film.

The invention according to claim 6 is the substrate processing method according to claim 5, wherein the protective film forming step further includes a step of removing a surface layer portion of the protective film to expose a hardened layer of the resist. By this method, since the cured layer of the resist is exposed prior to the cured layer destruction step, the cured layer on the resist surface can be reliably destroyed in the cured layer destruction step.
Invention of Claim 7 WHEREIN: The said protective film formation process includes the process of forming the said protective film with the thickness which exposes at least one part of the hardened layer of the said resist, It is any one of Claims 1-4. The substrate processing method according to claim 1. In this method, since the protective film is formed with a thickness that exposes at least a part of the cured layer of the resist, it is not necessary to remove the surface layer portion of the protective film afterwards. Therefore, the process can be simplified.

  Invention of Claim 8 is as described in any one of Claims 1-7 in which the said hardened layer destruction process includes the physical treatment process which makes a physical external force act on the said hardened layer, and destroys the said hardened layer. It is a substrate processing method of description. By this method, the hardened layer can be destroyed by applying a physical external force to the hardened layer. Therefore, the resist on the substrate can be surely removed outside the substrate in the subsequent cleaning process by liquid treatment.

  The invention according to claim 9 is the substrate processing method according to claim 8, wherein the physical processing step includes a step of performing chemical mechanical polishing on the hardened layer. According to this method, the hardened layer in the surface layer portion of the resist can be reliably destroyed by chemical mechanical polishing. At that time, damage to the substrate surface or the thin film formed on the surface is suppressed or prevented by the protective film.

  The invention according to claim 10 is the substrate processing method according to claim 8, wherein the physical processing step includes a step of performing an ashing process on the hardened layer. In this method, the hardened layer can be ashed and destroyed by performing an ashing process on the hardened layer. Even when oxygen plasma is used in the ashing process, since a protective film is formed in a region on the substrate where the resist pattern is not formed, a thin film formed on the substrate or its surface by the oxygen plasma. Will not be damaged. That is, the substrate surface and the thin film formed on the surface are not oxidized by oxygen plasma.

  The invention according to claim 11 is the substrate processing method according to claim 8, wherein the physical processing step includes a step of performing a two-fluid treatment in which two fluids in which a liquid and a gas are mixed are sprayed on the hardened layer. is there. In this method, two fluids (droplet flow) formed by mixing a liquid and a gas are sprayed onto the cured layer of the resist, whereby the cured layer can be destroyed. And since the board | substrate surface and the thin film formed in the surface are protected by the protective film, it can avoid or suppress that they are damaged by injection of two fluids.

  The invention according to claim 12 is the substrate processing method according to claim 8, wherein the physical processing step includes an ultrasonic processing step of supplying a liquid to which an ultrasonic wave is applied to the cured layer. In this method, the hardened layer can be broken through ultrasonic vibration by supplying a liquid to which the ultrasonic wave is applied to the hardened layer. Since the substrate surface and the thin film formed on the surface are protected by the protective film, the pattern does not collapse due to the ultrasonic vibration.

  The invention according to claim 13 is the substrate processing method according to claim 8, wherein the physical processing step includes a step of causing popping inside the resist by heating the resist including the hardened layer. In this method, by heating the resist, resist popping occurs in the space closed by the hardened layer. Thereby, a hardened layer can be destroyed reliably. Since the protective film is formed in the region where the resist pattern is not formed, the substrate surface or the thin film formed on the surface is not damaged during the popping.

The invention according to claim 14 is the substrate processing method according to any one of claims 1 to 13, wherein the protective film is made of an organic material. In this method, since the protective film is made of an organic material, it can be easily removed together with a resist made of the same organic material.
That is, as described in claim 15, the cleaning step includes a step of supplying an organic material removing liquid that can be removed by dissolving or decomposing the organic material to the substrate as the processing liquid. For example, by supplying the organic material removing liquid, the resist and the protective film whose hardened layer is broken can be simultaneously removed from the substrate. The protective film as the organic material may be a resist film, for example.

  The invention according to claim 16 is a substrate processing apparatus for removing the resist from the substrate (W) on which the pattern of the resist (42) having the hardened layer (43) is formed, the surface of the substrate And a protective film forming means (6) for covering the region where the resist pattern is not formed with a protective film (45), and hardening for destroying the hardened layer on the substrate on which the protective film is formed by the protective film forming means. Layer destruction processing means (11, 48, 75, 85, 95), and cleaning for removing the resist and the protective film on the substrate, on which the cured layer has been destroyed by the cured layer destruction treatment means, from the substrate surface with a treatment liquid. A substrate processing apparatus including processing means (12, 52). With this configuration, the same effect as that of the first aspect of the invention can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic plan view for explaining the layout of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus includes an indexer unit 1 and a substrate processing unit 2 coupled to the indexer unit 1. The indexer unit 1 has a carrier holding unit 3 that can hold a plurality of carriers C arranged in a predetermined direction and can hold a plurality of substrates W in a stacked state. And an indexer robot 4 capable of loading / unloading the substrate W to / from the carrier C. The substrate W is, for example, a semiconductor wafer or a glass substrate for a liquid crystal display panel. In this embodiment, the substrate W is a substrate on which a resist used as a mask for ion implantation processing is formed. The indexer robot 4 unloads such a substrate W from the carrier C and delivers it to the substrate processing unit 2, and receives the substrate W after being processed by the substrate processing unit 2 from the substrate processing unit 2, and holds the carrier. It is carried into the carrier C held by the section 3.

  The substrate processing unit 2 includes a main transfer robot 5 at the center, and a plurality (four in this embodiment) of processing units 6, 7, 8, 9 are arranged around the main transfer robot 5. It is configured. In this embodiment, the processing unit 6 is a coater unit that applies a resist to the surface of the substrate W (hereinafter also referred to as “coater unit 6”), and the processing units 7 and 8 are applied to the surface of the substrate W. The baking unit performs the baking process for volatilizing the solvent from the resist (hereinafter also referred to as “bake units 7 and 8”). The processing unit 9 further includes a peeling unit for peeling the resist on the surface of the substrate W. (Hereinafter also referred to as “peeling unit 9”).

  The main transport robot 5 can access the processing units 6 to 9 to carry out the processed substrate W from the processing units 6 to 9 and can carry the unprocessed substrate W into the processing units 6 to 9. . In addition, the main transfer robot 5 can transfer the substrate W to and from the indexer robot 4. That is, the main transfer robot 5 can receive the unprocessed substrate W from the indexer robot 4 and can pass the processed substrate W to the indexer robot 4.

  The coater unit 6 drops, for example, a resist solution onto the surface of the spin chuck that can hold the substrate W substantially horizontally and rotate it around the vertical axis, and the substrate W that is held and rotated by the spin chuck. A resist solution nozzle. The resist solution dropped on the surface of the substrate W is subjected to centrifugal force and spreads over the entire surface of the substrate W, whereby a resist coating film covering the entire region of the substrate W is formed.

  The bake units 7 and 8 can be configured by a hot plate on which the substrate W can be placed, for example. For example, a heater is built in the hot plate, and heat generated from the heater warms the substrate W through the surface of the hot plate. As a result, the organic solvent in the resist formed on the surface of the substrate W is volatilized, and a solidified resist film is formed on the substrate W. As the bake units 7 and 8, a lamp heating unit using an infrared lamp or the like can also be applied.

  2A and 2B are illustrative views for explaining the configuration of the peeling unit 9. The peeling unit 9 holds the substrate W substantially horizontally and rotates the substrate holding / rotating mechanism 10 that rotates about the vertical axis passing through the center of the substrate W and the surface of the substrate W held by the substrate holding / rotating mechanism 10. CMP (Chemical Mechanical Polishing) mechanism 11 for performing mechanical mechanical polishing, a cleaning liquid supply mechanism 12 for supplying a cleaning liquid toward the surface of the substrate W held by the substrate holding and rotating mechanism 10, and a substrate holding and rotating mechanism 10 A rinsing liquid supply mechanism 13 that supplies a rinsing liquid toward the surface of the held substrate W is provided.

The substrate holding and rotating mechanism 10 includes a disk-shaped rotating base 15, a rotating shaft 16 that supports the rotating base 15 in a substantially horizontal posture, and a rotation driving mechanism 17 that applies a rotating force to the rotating shaft 16. Yes.
The rotation base 15 is fixed to the upper end of the rotation shaft 16 so that the center thereof is aligned. The upper surface of the rotating base 15 is a flat surface along a horizontal plane, and functions as a surface plate that supports the lower surface of the substrate W when the surface of the substrate W is chemically and mechanically polished. The rotation base 15 includes a plurality of substrate holding members 18 that abut against the peripheral edge of the substrate W and grip the substrate W, and a holding member that moves the plurality of substrate holding members 18 up and down with respect to the rotation base 15. An elevating mechanism 19 is provided. The substrate holding member 18 can be held by the holding member lifting mechanism 19 to hold the substrate W at a position spaced upward from the upper surface of the rotation base 15 (see FIG. 2B). Further, the substrate holding member 18 is lowered into the rotation base 15 by the holding member elevating mechanism 19, whereby the substrate W is placed on the upper surface of the rotation base 15 (see FIG. 2A).

  The CMP mechanism 11 includes a swing arm 21 that swings in the horizontal direction along the substrate W held by the substrate holding and rotating mechanism 10, a support shaft 22 coupled to the base end of the swing arm 21, A swing drive mechanism 23 that swings the swing arm 21 by rotating the support shaft 22 around the vertical axis, a polishing pad 24 coupled to the free end side of the swing arm 21, and the polishing pad 24 A polishing pad drive mechanism 25 that rotates about a vertical axis and a lift drive mechanism 26 that moves the support shaft 22 up and down are provided.

  In a state where the substrate W is placed on the upper surface of the rotation base 15, the rotation base 15 is rotated by the rotation driving mechanism 17, and the polishing pad 24 is moved to the upper surface of the substrate W by the action of the swing driving mechanism 23 and the lifting / lowering driving mechanism 26. When the polishing pad 24 is further rotated by the polishing pad driving mechanism 25, the upper surface of the substrate W is polished by the polishing pad 24. Then, the upper surface of the substrate W can be scanned by the polishing pad 24 by driving the swing driving mechanism 23 to swing the swing arm 21 and moving the polishing pad 24 in the rotational radius direction of the substrate W. . Thus, the chemical mechanical polishing (CMP) process can be performed on the entire upper surface of the substrate W. During the period in which the polishing pad 24 is in contact with the substrate W, an abrasive (slurry) is supplied to the surface of the substrate W by an abrasive supply mechanism (not shown). Thereby, the surface of the substrate W is polished by a chemical action and a mechanical action.

  The cleaning liquid supply mechanism 12 includes a cleaning liquid nozzle 30 that discharges the cleaning liquid, a swing arm 31 that supports the cleaning liquid nozzle 30 on the free end side, a support shaft 32 that is coupled to the base end of the swing arm 31, A swing drive mechanism 33 that swings the swing arm 31 in the horizontal direction by rotating the support shaft 32 and a lift drive mechanism 34 that moves the swing arm 31 up and down by moving the support shaft 32 up and down are provided. ing. A cleaning liquid from a cleaning liquid nozzle supply source is supplied to the cleaning liquid nozzle 30 via a cleaning liquid valve 35. The swing arm 31 is provided so as to be able to swing in the horizontal direction along the surface of the substrate W held by the substrate holding and rotating mechanism 10, and a support shaft 32 is vertically arranged at the base end portion of the swing arm 31. Are joined along.

  With such a configuration, the cleaning liquid is supplied to the surface of the substrate W by opening the cleaning liquid valve 35 and discharging the cleaning liquid from the cleaning liquid nozzle 30 while swinging the swing arm 31 by the swing drive mechanism 33. it can. On the other hand, in the substrate holding / rotating mechanism 10, if the substrate holding member 18 is moved to the raised position (see FIG. 2B) by the holding member lifting / lowering mechanism 19, the substrate W is held there, and the rotation base 15 is rotated by the rotation drive mechanism 17. On the substrate W, the cleaning liquid subjected to the centrifugal force spreads over the entire area of the substrate W.

The cleaning liquid supplied by the cleaning liquid supply mechanism 12 is, for example, a resist stripping liquid. As the resist stripping solution, an SPM solution (sulfuric acid / hydrogen peroxide mixture) can be used, and a stripping solution containing an organic solvent such as an organic amine as a component can also be used.
The rinsing liquid supply mechanism 13 is interposed in the rinsing liquid supply path to the rinsing liquid nozzle 36 that supplies the rinsing liquid toward the center of the upper surface of the substrate W held by the substrate holding and rotating mechanism 10. And a rinse liquid valve 37. The rotary base 15 is rotated while the substrate holding member 18 is placed at the raised position (FIG. 2B) by the holding member lifting mechanism 19, while the rinse liquid valve 37 is opened to discharge the rinse liquid from the rinse liquid nozzle 36. Then, the rinse liquid that has received the centrifugal force on the substrate W spreads over the entire surface of the substrate W. Thereby, the cleaning liquid on the substrate W can be replaced with the rinse liquid. As the rinsing liquid, functional water such as carbonated water, electrolytic ion water, hydrogen water, magnetic water, or dilute ammonia (for example, about 1 ppm) can be used in addition to pure water.

The rotation drive mechanism 17, the holding member lifting mechanism 19, the swing drive mechanism 23, the polishing pad drive mechanism 25, the lift drive mechanism 26, the swing drive mechanism 33, the lift drive mechanism 34, the cleaning liquid valve 35 and the rinse liquid valve 37. The operation is controlled by a control device 38 (not shown in FIG. 2B) composed of a microcomputer or the like.
3A to 3D are schematic cross-sectional views for explaining processing that can be executed by the substrate processing apparatus. As shown in FIG. 3A, the substrate W to be processed has a surface on which a polysilicon thin film pattern 41 and a resist pattern 42 are formed. More specifically, a resist pattern 42 is formed on the polysilicon thin film pattern 41. The polysilicon thin film pattern 41 is patterned by an etching process using the resist pattern 42 as a mask. The substrate W is subjected to an ion implantation process using the resist pattern 42 and the polysilicon thin film pattern 41 as a mask, so that impurity ions are introduced into a region not masked by the resist pattern 42. ing. The surface layer portion of the resist pattern 42 is a hardened layer 43 due to alteration due to the ion implantation process.

The substrate W in this state is loaded into the above-described substrate processing apparatus while being accommodated in the carrier C. The substrate W is taken out of the carrier C by the indexer robot 4 and transferred to the main transfer robot 5 of the substrate processing unit 2. The main transfer robot 5 carries the substrate W into the coater unit 6.
The coater unit 6 supplies and applies a liquid resist onto the substrate W. As a result, the state shown in FIG. 3B is obtained. That is, the protective resist film 45 is supplied to the surface of the substrate W that is not covered with the polysilicon thin film pattern 41 and the resist pattern 42, whereby the region between the polysilicon thin film pattern 41 and the resist pattern 42 is protected. Embedded by 45.

  After the coating process of the protective resist film 45, the substrate W is unloaded from the coater unit 6 by the main transfer robot 5 and is loaded into the bake unit 7 or 8. By being baked by the bake units 7 and 8, the organic solvent in the protective resist film 45 is volatilized, and the solidified protective resist film 45 is formed on the substrate W. In this state, as shown in FIG. 3B, the thickness of the protective resist film 45 is such that the height from the surface of the substrate W is higher than the top surface of the resist pattern 42. 42 is buried in the protective resist film 45.

  After the baking process, the main transport robot 5 takes out the substrate W from the bake units 7 and 8 and carries it into the peeling unit 9. In the peeling unit 9, first, a CMP (chemical mechanical polishing) process is performed as shown in FIG. 3C. That is, the control device 38 controls the holding member lifting mechanism 19 to control the substrate holding member 18 to the lowered position, thereby placing the substrate W on the upper surface of the rotary base 15 as a surface plate (see FIG. 2A). ). Further, the control device 38 controls the rotation drive mechanism 17 to rotate the rotation base 15 at a constant speed. The control device 38 controls the swing drive mechanism 23, the polishing pad drive mechanism 25, and the lift drive mechanism 26 to rotate the polishing pad 24 while being in contact with the upper surface of the substrate W, and further, the swing arm. 21 is swung to swing the polishing pad 24 along the radial direction passing through the center of rotation of the substrate W.

  Thus, the chemical mechanical polishing process is performed on the entire surface of the substrate W. As a result, the resist film 45 above the resist pattern 42 is ground, and the hardened layer 43 near the top surface of the resist pattern 42 is broken and removed (hardened layer breaking step). Thus, the state of FIG. 3C is obtained. At this time, the surface of the resist film 45 after grinding is at a position higher than the top surface of the polysilicon thin film pattern 41. Therefore, the polysilicon thin film pattern 41 is not damaged by the chemical mechanical polishing process.

  After at least a part of the hardened layer 43 is destroyed, the control device 38 controls the elevating drive mechanism 26 and the swing drive mechanism 23 to retract the polishing pad 24 to the outside of the rotary base 15. Next, the control device 38 performs a process for supplying a cleaning liquid (resist stripping liquid) to the upper surface of the substrate W. Specifically, the control device 38 controls the holding member raising / lowering driving mechanism 19 to guide the substrate holding member 18 to the raised position, and thereby, the position where the substrate W is separated upward from the upper surface of the rotation base 15 by a predetermined distance. (See FIG. 2B). In this state, the control device 38 rotates the rotation base 15 at a predetermined liquid processing rotation speed by the rotation drive mechanism 17. On the other hand, the control device 38 controls the swing drive mechanism 33 and the lift drive mechanism 34 to guide the cleaning liquid nozzle 30 upward on the substrate W, open the cleaning liquid valve 35, and direct the cleaning liquid nozzle 30 toward the upper surface of the substrate W. To discharge the cleaning solution. Further, the control device 38 controls the swing drive mechanism 33 to swing the swing arm 31 in the horizontal direction, thereby changing the landing point of the cleaning liquid discharged from the cleaning liquid nozzle 30 along the radial direction of the substrate W. Let Thus, the cleaning liquid is supplied to the entire upper surface of the substrate W.

  By supplying the cleaning liquid, the resist pattern 42 and the protective resist film 45 are dissolved and removed on the upper surface of the substrate W. Since the hardened layer 43 of the resist pattern 42 has already been destroyed, the cleaning liquid easily penetrates into the region surrounded by the hardened layer and excludes the resist pattern 42 together with the remaining hardened layer 43 to the outside of the substrate W. . In this way, as shown in FIG. 3D, the polysilicon thin film pattern 41 is left on the substrate W, and the resist pattern 42 and the protective resist film 45 are both removed.

  When the cleaning process is thus completed, the control device 38 closes the cleaning liquid valve 35 to stop the discharge of the cleaning liquid, and controls the swing driving mechanism 33 and the lifting / lowering driving mechanism 34 to move the cleaning liquid nozzle 30 to the rotation base 15 side. Evacuate toward. Further, the control device 38 opens the rinse liquid valve 37 to supply the rinse liquid from the rinse liquid nozzle 36 to the surface of the substrate W. As a result, the cleaning liquid on the substrate W is replaced with the rinsing liquid, and is removed out of the substrate W.

After performing the rinsing process for a predetermined time, the control device 38 closes the rinsing liquid valve 37 to stop the supply of the rinsing liquid, and further controls the rotation drive mechanism 17 to accelerate the rotation base 15 to a predetermined drying rotation speed. Let Thereby, the rinse liquid on the substrate W is shaken off to the outside by the centrifugal force.
Thus, after the substrate W is dried, the control device 38 controls the rotation drive mechanism 17 to stop the rotation of the rotation base 15. Thereafter, the processed substrate W is unloaded from the peeling unit 9 by the main transfer robot 5 and transferred to the indexer robot 4. The indexer robot 4 carries the received processed substrate W into the carrier C.

  As described above, according to this embodiment, the surface of the substrate W and the polysilicon thin film pattern 41 formed on the surface are protected by the protective resist film 45, and the resist pattern 42 is formed by chemical mechanical polishing. The hardened layer 43 is destroyed. Thereafter, a resist stripping solution as a cleaning solution is supplied to the substrate W, whereby the resist pattern 42 and the protective resist film 45 are cleaned and removed from the substrate W. Therefore, the resist pattern 42 having the hardened layer 43 can be favorably removed from the substrate W while suppressing or avoiding damage to the surface of the substrate W and the polysilicon thin film pattern 41 formed thereon. During the chemical mechanical polishing process, the protective resist film 45 embedded between the polysilicon thin film patterns 41 not only protects the surface of the substrate W, but also the polysilicon thin film pattern 41 is applied by an external force from the polishing pad 24. Make sure to prevent it from collapsing. In this way, the polysilicon thin film pattern 41 can be reliably prevented from collapsing. Of course, the substrate W or the polysilicon thin film pattern 41 is not damaged when the resist pattern 42 and the protective resist film 45 are removed by the cleaning liquid.

  FIG. 4 is an illustrative plan view showing the configuration of the substrate processing apparatus according to the second embodiment of the present invention. In FIG. 4, parts corresponding to the parts shown in FIG. 1 are given the same reference numerals. In this substrate processing apparatus, an ashing unit 48 and a peeling unit 49 are provided as substrate processing units in addition to the coater unit 6 and the bake unit 7. The coater unit 6, the bake unit 7, the ashing unit 48, and the peeling unit 49 are arranged around the main transfer robot 5.

The ashing unit 48 is a processing unit that generates oxygen plasma in the processing chamber in which the substrate W is disposed, and oxidizes and removes the hardened layer on the resist surface by the action of the oxygen plasma.
FIG. 5 is an illustrative view for explaining the configuration of the peeling unit 49. The peeling unit 49 holds the substrate W substantially horizontally and rotates the substrate holding rotation mechanism 50, the cleaning liquid supply mechanism 52 that supplies the cleaning liquid to the substrate W held by the substrate holding rotation mechanism 50, and the substrate W And a rinsing liquid supply mechanism 53 for supplying a rinsing liquid to the substrate W.

  The substrate holding and rotating mechanism 50 includes a disk-shaped rotating base 55, a rotating shaft 56 with the rotating base 55 fixed to the upper end, and a rotation driving mechanism 57 that applies a rotating force to the rotating shaft 56. The rotating shaft 56 is disposed along the vertical direction, and the rotating base 55 is fixed to the upper end of the rotating shaft 56 in a substantially horizontal posture. A plurality of substrate holding members 58 are erected on the periphery of the rotation base 55 at intervals in the circumferential direction. The substrate holding member 58 can hold the substrate W in a substantially horizontal posture. The substrate W can be rotated by applying a rotational force from the rotation drive mechanism 57 to the rotating shaft 56 in a state where the substrate W is held by the substrate holding member 58.

  The cleaning liquid supply mechanism 52 includes a cleaning liquid nozzle 60, a swing arm 61 that holds the cleaning liquid nozzle 60 on the free end side, a support shaft 62 that is coupled to the base end side of the swing arm 61, and the support shaft 62. A swing drive mechanism 63 that swings the swing arm 61 in the horizontal direction by rotating the shaft around the axis, a lift drive mechanism 64 that moves the cleaning liquid nozzle 60 up and down by moving the support shaft 62 up and down, and a cleaning liquid. A cleaning liquid valve 65 provided in a cleaning liquid supply path for supplying a cleaning liquid (resist stripping liquid in this embodiment) to the nozzle 60 is provided. With this configuration, the cleaning liquid nozzle 60 is held at an appropriate height by the lift drive mechanism 64, and the swinging arm 61 is swung horizontally by the swing driving mechanism 63 in this state, thereby holding the cleaning liquid nozzle 60 on the substrate. The substrate can be horizontally moved above the substrate W held by the rotation mechanism 50. Thereby, the landing point of the cleaning liquid supplied from the cleaning liquid nozzle 60 on the substrate W can be moved along the radial direction of the substrate W, and the cleaning liquid can be supplied to the entire surface of the substrate W.

  The rinse liquid supply mechanism 53 includes, for example, a rinse liquid nozzle 66 that is fixedly arranged, and a rinse liquid valve 67 that is interposed in a supply path that supplies the rinse liquid to the rinse liquid nozzle 66. By opening the rinse liquid valve 67, the rinse liquid can be discharged from the rinse liquid nozzle 66 toward the rotation center of the substrate W held by the substrate holding and rotating mechanism 50. If the substrate W is in a rotating state, the rinse liquid that has reached the surface of the substrate W spreads over the entire surface of the substrate W by centrifugal force.

In order to control the operations of the rotation drive mechanism 57, the swing drive mechanism 63, the elevation drive mechanism 64, the cleaning liquid valve 65, and the rinse liquid valve 67, a control device 70 having a microcomputer or the like is provided.
6A to 6D are schematic cross-sectional views for explaining processing performed by the substrate processing apparatus of this embodiment. 6A to 6D, parts equivalent to those shown in FIGS. 3A to 3D are denoted by the same reference numerals. As in the case of the first embodiment described above, a polysilicon thin film pattern 41 is formed on the surface of the substrate W, and a resist pattern 42 is formed so as to cover the polysilicon thin film pattern 41. As a result of the ion implantation process performed on the substrate W using the resist pattern 42 as a mask, the resist pattern 42 has a hardened layer 43 on the surface thereof. This state is shown in FIG. 6A.

  The substrate W in this state is filled with a resist coating process in the coater unit 6 in the same manner as in the first embodiment, thereby filling the region between the polysilicon thin film pattern 41 and the resist pattern 42. At the same time, a protective resist film 45 having a thickness for burying the resist pattern 42 is formed. Furthermore, the organic solvent in the protective resist film 45 is volatilized by the baking process by the baking unit 7, and the solidified protective resist film 45 is formed (see FIG. 6B).

  The main transfer robot 5 unloads the substrate W after the baking process from the baking unit 7 and loads it into the ashing unit 48. In the ashing unit 48, oxygen plasma is formed in the processing chamber into which the substrate W is carried, and the process of oxidizing and ashing the surface layer portion of the protective resist film 48 is performed by the action of the oxygen plasma. Thereby, the surface layer portion of the protective resist film 45 is removed, and the cured layer 43 on the top surface of the resist pattern 42 is exposed, and the cured layer 43 is oxidized and ashed. In this way, a part of the hardened layer 43 of the resist pattern 42 can be destroyed. This state is shown in FIG. 6C. At this time, the surface of the protective resist film 45 is higher than the top surface of the polysilicon thin film pattern 41, and the polysilicon thin film pattern is not likely to be damaged by oxygen plasma.

After such an ashing process, the main transfer robot 5 carries out the processed substrate W from the ashing unit 48 and carries the substrate W into the peeling unit 49.
In the peeling unit 49, the control device 70 initially holds the rotation base 55 in a stationary state by controlling the rotation drive mechanism 57. The substrate W is transferred from the main transport robot 5 to the substrate holding and rotating mechanism 50 in this state, and the substrate W is held by the substrate holding member 58. After the main transfer robot 5 has retreated from the peeling unit 49, the control device 70 controls the rotation drive mechanism 57 to rotate the rotation base 55 at a predetermined liquid processing rotation speed, thereby rotating the substrate W. Furthermore, the control device 70 moves the cleaning liquid nozzle 60 in the horizontal direction at a predetermined height of the substrate W by controlling the elevation drive mechanism 64 and the swing drive mechanism 63. At the same time, the control device 70 opens the cleaning liquid valve 65 and discharges a resist stripping liquid (for example, SPM liquid) as the cleaning liquid from the cleaning liquid nozzle 60. Thus, the resist stripping liquid discharged from the cleaning liquid nozzle 60 is supplied to the upper surface of the substrate W while changing the liquid landing point in the rotational radius direction passing through the rotation center of the substrate W. Due to the rotation of the substrate W, the supplied resist stripping solution spreads over the entire upper surface of the substrate W.

  The resist pattern 42 is removed together with the hardened layer 43 by the action of the resist stripping solution thus supplied, and at the same time, the protective resist film 45 is dissolved and removed (see FIG. 6D). After supplying the resist stripping solution to the substrate W for a predetermined time, the control device 70 closes the cleaning solution valve 65 and stops the discharge of the cleaning solution from the cleaning solution nozzle 60. At the same time, the cleaning liquid nozzle 60 is retracted to the outside of the substrate holding and rotating mechanism 50 by controlling the swing driving mechanism 63 and the elevation driving mechanism 64.

On the other hand, the control device 70 opens the rinse liquid valve 67 to discharge the rinse liquid from the rinse liquid nozzle 66 and supply it to the upper surface of the substrate W. As a result, the cleaning liquid is replaced with the rinsing liquid on the substrate W, and is removed from the substrate W.
After performing such a rinsing process for a predetermined time, the control device 70 closes the rinsing liquid valve 67 and stops the supply of the rinsing liquid. Thereafter, the control device 70 controls the rotation drive mechanism 57 to accelerate the rotation speed of the substrate W to a predetermined drying rotation speed. Thus, the rinse liquid on the substrate is spun off to the outside of the substrate W by centrifugal force, and the substrate W is dried.

After such a drying process, the control device 70 controls the rotation drive mechanism 57 to stop the rotation of the substrate W. Thereafter, the main transport robot 5 receives the substrate W from the substrate holding and rotating mechanism 50, carries it out from the peeling unit 49, and delivers it to the indexer robot 4.
In this manner, in this embodiment, the resist pattern cured layer 43 is destroyed by ashing, and then the resist pattern 42 on the substrate W together with the remainder of the cured layer 43 is processed by the resist stripping solution. W is removed outside. During the ashing process, the surface of the substrate W is protected by the protective resist film 45, and the polysilicon thin film pattern 41 formed on the surface of the substrate W is also protected by the protective resist film 45. Therefore, the oxygen plasma used during the ashing process does not damage the surface of the substrate W or the polysilicon thin film pattern 41. Since the resist stripping process after the ashing process is exclusively a liquid processing using a resist stripping solution, the substrate W and the polysilicon thin film pattern 41 are not damaged. In this way, while suppressing or avoiding damage to the substrate W and the polysilicon thin film pattern 41, the cured layer 43 of the resist pattern 42 can be destroyed, and the resist pattern 42 can be cleaned and removed from the substrate W by subsequent liquid treatment.

  FIG. 7 is a diagram for explaining the configuration of the substrate processing apparatus according to the third embodiment of the present invention, and can be used in place of the peeling unit 9 in the substrate processing apparatus having the layout shown in FIG. The configuration of the peeling unit 90 is shown schematically. In FIG. 7, the same components as those shown in FIG. 5 are given the same reference numerals. Reference is also made to FIG.

  The peeling unit 90 includes a substrate holding and rotating mechanism 50, a cleaning liquid supplying mechanism 52 that supplies a cleaning liquid to the substrate holding and rotating mechanism 50, and a rinse that supplies a rinsing liquid to the substrate W held by the substrate holding and rotating mechanism 50. A liquid supply mechanism 53 and a two-fluid supply mechanism 75 for supplying two fluids, which are mixed fluids of gas and liquid, to the substrate W held by the substrate holding and rotating mechanism 50 are provided. The configurations of the substrate holding and rotating mechanism 50, the cleaning liquid supply mechanism 52, and the rinsing liquid supply mechanism 53 are the same as those in the configuration of FIG.

  The two-fluid supply mechanism 75 includes a two-fluid nozzle 76 that discharges a mixed fluid of gas and liquid, a swing arm 77 that fixes the two-fluid nozzle 76 to the free end, and a base end of the swing arm 77. A support shaft 78 coupled to hold the swing arm 77 in a horizontal position, and a swing drive mechanism 79 that swings the swing arm 31 in the horizontal direction by rotating the support shaft 78 about its axis; An elevating drive mechanism 80 that moves the two-fluid nozzle 76 up and down by moving the support shaft 78 up and down is provided. The two-fluid nozzle 76 is supplied with pure water as an example of liquid via a pure water valve 81, and with nitrogen gas as an example of gas via a nitrogen gas valve 82. The two-fluid nozzle 76 mixes gas and liquid inside the casing, and is a mixed fluid of gas and liquid (two-fluid. One containing droplets in the airflow. Liquid from a discharge port opened toward the upper surface of the substrate W. A jet of droplets) may be of an internal mixing type, or may have a gas discharge port and a liquid discharge port at the lower end facing the substrate W, and the gas and liquid discharged from these may be outside the casing. May be of the external mixing type, which forms a mixed fluid of gas and liquid. A specific configuration of such a two-fluid nozzle is disclosed in Patent Document 2, for example.

  With such a configuration, the pure water valve 81 and the nitrogen gas valve 82 are opened, and pure water and nitrogen gas are supplied to the two-fluid nozzle 76, whereby a jet of pure water droplets is generated from the two-fluid nozzle 76. It discharges toward the upper surface of the. On the other hand, by controlling the swing drive mechanism 79 and the lift drive mechanism 80 under the control of the control device 70, the two-fluid nozzle 76 is swung horizontally at a predetermined height from the upper surface of the substrate W, so that the two-fluid The droplet jet (two fluids) supplied from the nozzle 76 can be scanned along the radial direction passing through the center of rotation on the surface of the substrate W. At this time, if the substrate W is rotated by the substrate holding and rotating mechanism 50, a jet of pure water droplets (two fluids) can be supplied to the entire surface of the substrate W.

8A to 8E are schematic sectional views showing an example of processing by the substrate processing apparatus of this embodiment. 8A to 8E, parts corresponding to the parts shown in FIGS. 3A to 3D described above are denoted by the same reference numerals.
The substrate W to be processed has a polysilicon thin film pattern 41 formed on the surface thereof, and a resist pattern 42 covering the polysilicon thin film pattern 41. The substrate W is selectively ion-implanted using the resist pattern 2 as a mask, and a hardened layer 43 is formed near the surface of the resist pattern 42 accordingly. This is the state shown in FIG. 8A.

  The substrate W in this state is carried into the coater unit 6 by the main transfer robot 5. The coater unit 6 supplies a resist for forming the protective resist film 45 on the entire surface of the substrate W. Thereafter, the main transfer robot 5 unloads the resist-coated substrate W from the coater unit 6 and loads it into the baking unit 7 or 8 to perform the baking process. By this baking treatment, the organic solvent in the resist is volatilized, and the solidified protective resist film 45 is obtained. The thickness of the protective resist film 45 is determined such that the height from the substrate W is higher than the top surface of the resist pattern 42. This state is shown in FIG. 8B.

  The substrate W after the baking process is unloaded from the bake unit 7 or 8 by the main transfer robot 5 and loaded into the peeling unit 90. In the peeling unit 90, the control device 70 initially stops the rotation drive mechanism 57 and controls the rotation base 55 to a stopped state. The substrate W is transferred from the main transfer robot 5 to the substrate holding and rotating mechanism 50 in this state. The substrate W is held by the substrate holding member 58.

  From this state, the control device 70 controls the rotation drive mechanism 57 to rotate the rotation base 55, thereby rotating the substrate W around its center. Further, the controller 70 causes the cleaning liquid supply mechanism 52 to supply a resist stripping liquid as a cleaning liquid to the surface of the substrate W. As a result, the surface layer portion of the protective resist film 45 is removed, and at least a part of the resist pattern 42 is exposed. This state is shown in FIG. 8C. At this time, the remaining film thickness of the protective resist film 45 is such that the surface thereof is located above the top surface of the polysilicon thin film pattern 41.

  Next, the control device 70 stops the supply of the cleaning liquid from the cleaning liquid supply mechanism 52, retracts the cleaning liquid nozzle 65 to the side of the substrate holding and rotating mechanism 50, and then operates the two-fluid supply mechanism 75. More specifically, the control device 70 controls the lift drive mechanism 80 to adjust the distance between the two-fluid nozzle 76 and the substrate W, and further controls the swing drive mechanism 79 to control the two-fluid. The nozzle 76 is horizontally moved above the substrate W held by the substrate holding and rotating mechanism 50. Further, the control device 70 opens the pure water valve 81 and the nitrogen gas valve 82 and discharges a droplet jet from the two-fluid nozzle 76 toward the substrate W. This droplet jet collides with the hardened layer 43 on the surface of the resist pattern 42, and the hardened layer 43 is destroyed by the kinetic energy at the time of the collision. The two-fluid nozzle 76 moves along the rotational radial direction passing through the center of rotation of the substrate W, and the substrate W is rotated to supply the two fluids from the two-fluid nozzle 76 to the entire surface of the substrate W. can do. Thereby, the hardened layer 43 of the resist pattern 42 can be destroyed in the entire area of the substrate W. This state is shown in FIG. 8D.

After the hardened layer 43 is destroyed, the resist pattern 42 on the surface of the substrate W is removed together with the hardened layer 43 by the action of the cleaning liquid supply mechanism 52 in the same manner as in the second embodiment described above, and at the same time, protected. The remaining portion of the resist film 45 is removed (see FIG. 8E).
When the hardened layer 43 of the resist pattern 42 is broken by physical force using a droplet jet discharged from the two-fluid nozzle 76, the polysilicon thin film pattern 41 formed under the resist pattern 42 is a protective resist film. Protected by 45. Therefore, the polysilicon thin film pattern 41 is not collapsed by the droplet jet. Further, since the surface of the substrate W is protected by the protective resist film 45, the surface of the substrate W is not damaged by the impact of the droplet jet. Thus, the resist pattern 42 having the hardened layer 43 can be satisfactorily removed while suppressing or avoiding damage to the substrate W and the polysilicon thin film pattern 41 formed on the surface thereof.

  In this embodiment, after forming the protective resist film 45 covering the resist pattern 42, the surface layer portion of the protective resist film 45 is removed by supplying a resist stripping solution to expose the hardened layer 43. When the protective resist film 45 is formed, the film thickness is set such that at least the top surface of the resist pattern 42 is exposed (however, the film surface is positioned above the top surface of the polysilicon thin film pattern 41). ) May be controlled. In this way, the process of FIG. 8C can be omitted.

Further, the treatment of removing the surface layer portion of the protective resist film 45 to expose the top surface of the resist pattern 42 is performed by supplying an organic solvent in addition to the resist stripping solution, or by exposing the entire surface to ultraviolet rays and then removing the alkaline aqueous solution. (For example, an alkaline developer) may be supplied.
FIG. 9 is an illustrative view showing a configuration of another peeling unit 91 that can be used in place of the peeling unit 9 in the substrate processing apparatus of FIG. In FIG. 9, the corresponding parts of the configuration shown in FIG. 7 are given the same reference numerals.

The peeling unit 91 includes an ultrasonic nozzle mechanism 85 instead of the two-fluid supply mechanism 75. The ultrasonic nozzle mechanism 85 has a configuration in which an ultrasonic nozzle 86 is attached to the free end portion of the swing arm 77 in the two-fluid supply mechanism 75 described above instead of the two-fluid nozzle 76.
Pure water from a pure water supply source is supplied to the ultrasonic nozzle 86 via a pure water valve 87. Further, an ultrasonic vibration plate 88 is provided in the ultrasonic nozzle 86, and a drive signal from the oscillation circuit 84 is supplied to the ultrasonic vibration plate 88. The oscillation circuit 84 and the pure water valve 87 are controlled by the control device 70.

With this configuration, ultrasonic vibration is applied to the pure water supplied to the ultrasonic nozzle 86, and the pure water is discharged from the discharge port 89 of the ultrasonic nozzle 86 toward the upper surface of the substrate W. Yes.
With this configuration, pure water to which ultrasonic vibration is applied is supplied from the ultrasonic nozzle 86 to the resist pattern 42, whereby the hardened layer 43 on the surface is destroyed by the ultrasonic vibration (see FIG. 8D). Thereafter, if the resist stripping solution is supplied to the surface of the substrate W by the cleaning solution supply mechanism 52, the resist pattern 42 can be removed together with the hardened layer 43, and the protective resist film 45 can be removed simultaneously. When pure water to which ultrasonic vibration is applied is supplied, the surface of the substrate W and the polysilicon thin film pattern 41 are protected by the protective resist film 45, so that the surface of the substrate W is damaged or polysilicon is removed. The pattern collapse of the thin film pattern 41 does not occur.

FIG. 10 is an illustrative view for explaining the configuration of still another peeling unit 92 that can be used in place of the peeling unit 9 in the substrate processing apparatus of FIG. In FIG. 10, parts corresponding to the parts shown in FIG. 7 are given the same reference numerals.
The peeling unit 92 includes a heating mechanism 95 instead of the two-fluid supply mechanism 75. The heating mechanism 95 includes a heating head 96 at the free end of the swing arm 77, and heating power from a power supply circuit 97 is supplied to the heating head 96. The power supply circuit 97 is controlled by the control device 70.

The heating head 96 is disposed at a predetermined height from the surface of the substrate W by the action of the lifting drive mechanism 80 and swings in the rotational radius direction passing through the rotation center of the substrate W by the action of the swing drive mechanism 79. be able to. Therefore, if the substrate W is rotated by the substrate holding and rotating mechanism 50, thermal energy can be applied to the entire upper surface of the substrate W.
From the state where the top surface of the resist pattern 42 is exposed from the protective resist film 45 (FIG. 8C), the control device 70 operates the heating mechanism 95 and rotates the substrate W by the substrate holding and rotating mechanism 50, while the heating head 96. Is horizontally swung at a position close to the resist pattern 42 on the upper surface of the substrate W. By receiving the thermal energy from the heating head 96, the resist sealed by the hardened layer 43 boils and popping (bumping) occurs. Thereby, the pressure of the internal space sealed by the hardened layer 43 increases, and the hardened layer 43 is destroyed. That is, the hardened layer 43 is cracked or the hardened layer 43 is blown away. Since no hardened layer is formed on the protective resist film 45, the evaporation of the residual solvent inside occurs slowly before the popping occurs, and the gas is upward in the direction perpendicular to the surface of the substrate W. Will come out. Therefore, even if the protective resist film 45 is heated, there is no possibility that the polysilicon thin film pattern 41 and the substrate W are damaged.

After the hardened layer 43 of the resist pattern 42 is destroyed in this way, if the resist stripping solution is supplied to the substrate W by the cleaning liquid supply mechanism 52, the resist pattern 42 is removed together with the hardened layer 43, and the protective resist film 45 is further removed. Are dissolved and removed at the same time.
As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, in the above-described embodiment, the cleaning liquid supply mechanisms 12 and 52 supply the resist stripping liquid, but may supply an organic solvent such as organic amines. By supplying the organic solvent, the resist pattern 42 and the protective resist film 45 can be dissolved and removed.

In the above-described embodiment, the photoresist is used as the protective film, but a protective film made of another material may be used. However, in order to remove the protective film in the same process as the resist pattern 42, it is preferable to form the protective film with an organic material. As an organic material other than the resist, for example, polyimide can be exemplified.
In addition, various design changes can be made within the scope of matters described in the claims.

1 is a schematic plan view for explaining a layout of a substrate processing apparatus according to a first embodiment of the present invention. 2A and 2B are illustrative views for explaining the configuration of a peeling unit provided in the substrate processing apparatus of FIG. 3A to 3D are schematic sectional views showing an example of processing by the substrate processing apparatus of the first embodiment. It is an illustrative top view which shows the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is an illustration figure for demonstrating the structure of the peeling unit with which the substrate processing apparatus of FIG. 4 was equipped. 6A to 6D are schematic cross-sectional views for explaining a process performed by the substrate processing apparatus of the second embodiment. It is a figure for demonstrating the structure of the substrate processing apparatus which concerns on 3rd Embodiment of this invention, and the illustration figure which shows the other structure of the peeling unit which can be used in the substrate processing apparatus of the layout shown by FIG. It is. 8A to 8E are schematic sectional views showing an example of processing by the substrate processing apparatus of the third embodiment. It is an illustration figure which shows the structure of the further another peeling unit which can be used in the substrate processing apparatus of FIG. It is an illustration figure for demonstrating the structure of the further another peeling unit which can be used in the substrate processing apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Indexer part 2 Resist pattern 2 Substrate processing part 3 Carrier holding part 4 Indexer robot 5 Main transfer robot 6 Coater unit 7, 8 Bake unit 9 Peeling unit 10 Substrate holding rotation mechanism 11 CMP mechanism 12 Cleaning liquid supply mechanism 13 Rinse liquid supply mechanism 15 Rotating base (surface plate)
DESCRIPTION OF SYMBOLS 16 Rotating shaft 17 Rotating drive mechanism 18 Substrate holding member 19 Holding member raising / lowering mechanism 21 Oscillating arm 22 Support shaft 23 Oscillating driving mechanism 24 Polishing pad 25 Polishing pad driving mechanism 26 Elevating / lowering driving mechanism 30 Cleaning liquid nozzle 31 Oscillating arm 32 Support shaft DESCRIPTION OF SYMBOLS 33 Oscillation drive mechanism 34 Elevating drive mechanism 35 Cleaning liquid valve 36 Rinse liquid nozzle 37 Rinse liquid valve 38 Control apparatus 41 Polysilicon thin film pattern 42 Resist pattern 43 Hardened layer 45 Protective resist film 48 Ashing unit 48 Protective resist film 49 Peeling unit 50 Substrate Holding and rotating mechanism 52 Cleaning liquid supply mechanism 53 Rinsing liquid supply mechanism 55 Rotating base 56 Rotating shaft 57 Rotating drive mechanism 58 Substrate holding member 60 Cleaning liquid nozzle 61 Oscillating arm 62 Support shaft 63 Oscillating driving mechanism 64 Elevating and driving mechanism 65 Washing Liquid nozzle 65 Cleaning liquid valve 66 Rinsing liquid nozzle 67 Rinsing liquid valve 70 Control device 75 Two-fluid supply mechanism 76 Two-fluid nozzle 77 Swing arm 78 Support shaft 79 Swing drive mechanism 80 Lifting drive mechanism 81 Pure water valve 82 Nitrogen gas valve 84 Oscillation Circuit 85 Ultrasonic nozzle mechanism 86 Ultrasonic nozzle 87 Pure water valve 88 Ultrasonic diaphragm 89 Discharge port 90 Peeling unit 91 Peeling unit 92 Peeling unit 95 Heating mechanism 96 Heating head 97 Power supply circuit C Carrier W Substrate

Claims (16)

A substrate processing method for removing a resist from a substrate on which a resist pattern having a hardened layer is formed,
A protective film forming step of covering a region where the resist pattern is not formed on the surface of the substrate with a protective film;
After this protective film forming step, a hardened layer breaking step for breaking the hardened layer,
A substrate processing method including a cleaning step of removing the resist and the protective film from the substrate surface with a processing liquid after the hardened layer breaking step.   The substrate processing method according to claim 1, wherein the substrate is a substrate after being subjected to an ion implantation process using the resist pattern as a mask.   The substrate processing method according to claim 1, wherein the substrate is a substrate having a thin film pattern formed on a surface thereof.   The substrate processing method according to claim 3, wherein in the protective film forming step, the protective film is formed so as to fill a region around the thin film pattern.   The said protective film formation process is a substrate processing method as described in any one of Claims 1-4 including the process of forming the said protective film with the thickness which embeds the hardened layer of the said resist.   The substrate processing method according to claim 5, wherein the protective film forming step further includes a step of exposing a hardened layer of the resist by removing a surface layer portion of the protective film.   The said protective film formation process is a substrate processing method as described in any one of Claims 1-4 including the process of forming the said protective film with the thickness which exposes at least one part of the hardened layer of the said resist.   The said hardened layer destruction process is a substrate processing method as described in any one of Claims 1-7 including the physical treatment process which makes a physical external force act on the said hardened layer, and destroys the said hardened layer.   The substrate processing method according to claim 8, wherein the physical processing step includes a step of performing chemical mechanical polishing on the hardened layer.   The substrate processing method according to claim 8, wherein the physical processing step includes a step of performing an ashing process on the hardened layer.   The substrate processing method according to claim 8, wherein the physical treatment step includes a step of performing a two-fluid treatment in which a two-fluid mixture of a liquid and a gas is sprayed on the cured layer.   The substrate processing method according to claim 8, wherein the physical treatment step includes an ultrasonic treatment step of supplying a liquid to which an ultrasonic wave is applied to the cured layer.   The substrate processing method according to claim 8, wherein the physical processing step includes a step of causing popping inside the resist by heating the resist including the hardened layer.   The substrate processing method according to claim 1, wherein the protective film is made of an organic material.   The substrate cleaning method according to claim 14, wherein the cleaning step includes a step of supplying an organic material removing liquid capable of dissolving and decomposing an organic material to the substrate as the processing liquid. A substrate processing apparatus for removing a resist from a substrate on which a resist pattern having a hardened layer is formed,
A protective film forming means for covering a region where the resist pattern is not formed on the surface of the substrate with a protective film;
A hardened layer breaking treatment means for breaking the hardened layer on the substrate on which the protective film is formed by the protective film forming means;
A substrate processing apparatus, comprising: a cleaning processing unit that removes the resist and the protective film on the substrate whose hardened layer has been destroyed by the hardened layer destruction processing unit from the surface of the substrate with a processing liquid.

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