KR102233590B1 - Substrate processing method, substrate processing apparatus and storage medium - Google Patents

Abstract

It is to improve productivity. A substrate processing method according to an aspect of the embodiment includes a processing liquid supplying step of supplying a processing liquid containing a volatile component and forming a film on the substrate to a substrate on which pretreatment requiring atmosphere management or time management has been performed after processing, And a receiving step of accommodating a substrate on which the processing liquid is solidified or cured by volatilization of the volatile component in a transport container.

Description

Substrate processing method, substrate processing apparatus, and storage medium TECHNICAL FIELD [SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM}

The disclosed embodiments relate to a substrate processing method, a substrate processing apparatus, and a storage medium.

Conventionally, a dry etching process in which a part of metal wiring formed inside the substrate is exposed by performing dry etching on a substrate such as a semiconductor wafer is known (see Patent Document 1).

After exposing the metal wiring inside the substrate by such a dry etching process, if the substrate is left unattended for a long time, adverse effects such as oxidation of the exposed metal wiring will occur. For this reason, a limited time (Q-time) is set in the waiting time after the dry etching process.

Japanese Patent Laid-Open Publication No. 2010-027786

However, in the prior art described above, since time management is required to comply with the limited time (Q-time), a decrease in productivity accompanying an increase in man-hours becomes a problem.

In addition, the above-described problem is not limited to the case of performing dry etching, and is a problem that may similarly occur when performing wet cleaning or film forming treatment.

An aspect of the embodiment aims to provide a substrate processing method, a substrate processing apparatus, and a storage medium capable of improving productivity.

A substrate processing method according to an aspect of the embodiment includes a processing liquid supplying step of supplying a processing liquid for forming a film on the substrate containing a volatile component to a substrate on which pretreatment requiring atmosphere management or time management is performed after processing, and And a receiving step of accommodating the substrate on which the processing liquid is solidified or cured by volatilization of the processing volatile component in a transport container.

According to one aspect of the embodiment, it is possible to improve productivity.

1A is an explanatory diagram of a substrate processing method according to the first embodiment.
1B is an explanatory diagram of a substrate processing method according to the first embodiment.
1C is an explanatory diagram of a substrate processing method according to the first embodiment.
2 is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment.
3 is a diagram showing a schematic configuration of a first processing device.
4 is a diagram showing a schematic configuration of a second processing device.
5 is a schematic diagram showing an example of the configuration of a dry etching unit.
6 is a schematic diagram showing an example of the configuration of the first liquid processing unit.
7 is a schematic diagram showing an example of the configuration of a second liquid processing unit.
Fig. 8 is a flow chart showing a processing procedure of substrate processing according to the first embodiment.
9A is a diagram showing an example of a back surface cleaning process.
9B is a diagram showing an example of a back surface cleaning process.
10 is a diagram showing another example of the back surface cleaning process.
11 is a diagram showing another example of the back surface cleaning process.
12 is a diagram showing a schematic configuration of a first processing apparatus according to a third embodiment.
13 is a diagram showing a schematic configuration of a second processing apparatus according to the third embodiment.
14 is a diagram showing a schematic configuration of a second processing apparatus according to the fourth embodiment.
15 is a schematic diagram showing an example of the configuration of a removal unit according to the fourth embodiment.
16 is a diagram showing a schematic configuration of a second processing apparatus according to the fifth embodiment.
17 is a diagram showing an example of a process to which a film forming treatment liquid supply treatment and a removal treatment are applied.

Hereinafter, embodiments of a substrate processing method, a substrate processing apparatus, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by the Examples shown below.

(Example 1)

<Contents of the substrate processing method>

First, a substrate processing method according to the first embodiment will be described with reference to Figs. 1A to 1C. 1A to 1C are explanatory diagrams of a substrate processing method according to a first embodiment.

In the substrate processing method according to the first embodiment, a substrate such as a semiconductor wafer (hereinafter referred to as wafer W) in which at least a part of the metal wiring formed therein is exposed is processed without being limited by Q-time. Make it possible.

Here, the Q-time is a limited time set with respect to the standing time after dry etching in order to prevent oxidation of the metal wiring exposed by dry etching, for example.

When the Q-time is set, since time management to comply with the Q-time is required, there is a fear that a decrease in productivity accompanying an increase in man-hours may occur. In addition, when the set Q-time is short, line management becomes difficult. For this reason, there is also a concern about a decrease in productivity due to the complexity of line management.

As shown in Fig. 1A, the wafer W includes, for example, a wiring layer 101, a liner film 103, and an interlayer insulating film 104. These are laminated in the order of the wiring layer 101, the liner film 103, and the interlayer insulating film 104. In the wiring layer 101, a Cu wiring 102, which is an example of a metal wiring, is formed.

Further, the wafer W has a via hole 106. The via hole 106 is formed by dry etching. The via hole 106 reaches the wiring layer 101, and the surface of the Cu wiring 102 is exposed from the bottom of the via hole 106.

In the substrate processing method according to the first embodiment, as shown in Fig. 1B, a processing liquid containing a volatile component and for forming a film on the wafer W (hereinafter, referred to as a'film forming processing liquid') is used. It is supplied on the wafer W. Specifically, in the first embodiment, a film forming processing liquid (hereinafter, referred to as "top coat liquid") for forming a top coat film on the wafer W is supplied onto the wafer W.

Here, the top coat film is a protective film applied on the upper surface of the resist film in order to prevent penetration of the immersion liquid into the resist film. In addition, the immersion liquid is a liquid used for immersion exposure in a lithography process, for example.

The top coat liquid supplied on the wafer W is solidified or cured while causing volume contraction by volatilization of volatile components contained therein to form a top coat film (see Fig. 1C). In addition, the top coat liquid contains an acrylic resin having a property of shrinking volume when solidified or cured, and volume shrinkage of the top coat liquid occurs also by curing shrinkage of the acrylic resin. The term "solidification" as used herein refers to solidification, and the term "curing" refers to polymerization (for example, crosslinking or polymerization) by linking molecules together.

When the top coat film is formed on the wafer W, the Cu wiring 102 exposed by dry etching is covered with the top coat film. The wafer W is accommodated in the transfer container in this state.

As described above, according to the substrate processing method according to the first embodiment, by protecting the exposed Cu wiring 102 with the top coat film, the exposed Cu wiring 102 is not adversely affected such as oxidation, Setting of Q-time becomes unnecessary. Since the Q-time becomes unnecessary, time management for complying with the Q-time becomes unnecessary, and it is possible to prevent the complexity of line management accompanying the compliance of the Q-time. Therefore, according to the substrate processing method according to the first embodiment, productivity can be improved.

Further, the reaction product P grows when the residual gas of dry etching reacts with moisture or oxygen in the atmosphere. On the other hand, according to the substrate processing method according to the first embodiment, the growth of the reaction product P can be suppressed by protecting the exposed Cu wiring 102 with a top coat film. Accordingly, it is possible to prevent adverse effects such as a decrease in electrical properties or a decrease in yield due to the reaction product P.

In addition, in the substrate processing method according to the first embodiment, by removing the top coat film formed on the wafer W after taking out the wafer W accommodated in the transfer container, reactions such as polymers generated by dry etching or ashing. A treatment to remove the product (P) is also performed.

Specifically, a removal liquid for removing the top coat film is supplied onto the top coat film. In the first embodiment, an alkali developer is used as the removal liquid.

By supplying an alkali developer, the top coat film is peeled off from the wafer W. At this time, the reaction product P remaining on the wafer W is also peeled off from the wafer W together with the top coat film. Thereby, the reaction product P can be removed from the wafer W.

As described above, according to the substrate processing method according to the first embodiment, since the reaction product can be removed without using a chemical action, damage to the Cu wiring 102 due to an etching action or the like can be suppressed.

Therefore, according to the substrate processing method according to the first embodiment, the reaction product P remaining on the wafer W after dry etching or after ashing can be removed while suppressing damage to the wafer W. Further, after the top coat film is formed on the wafer W, all of the top coat films are removed from the wafer W without performing pattern exposure.

The top coat liquid is solidified or cured while causing volume contraction to become a top coat film. The reaction product P remaining on the wafer W can be separated from the wafer W by the distortion (tensile force) generated by the volume contraction of the top coat liquid at this time.

Since the top coat liquid undergoes volume shrinkage due to the volatilization of the volatile components and the curing shrinkage of the acrylic resin, the volume shrinkage is higher than that of the film-forming treatment liquid containing only the volatile components, and the reaction product (P) can be strongly separated. have. In particular, since acrylic resin has a larger curing shrinkage compared to other resins such as epoxy resins, the top coat liquid is effective in that it imparts a pulling force to the reaction product (P).

In addition, the top coat film swells when it is peeled off by an alkaline developer. For this reason, according to the substrate treatment method according to the first embodiment, in addition to the volume contraction due to volatilization of the top coat liquid, the reaction product P is strongly removed from the wafer W by volume expansion due to the swelling of the top coat film. Can be separated.

In addition, in the first embodiment, the removal efficiency of the reaction product P is improved by using a thing having alkalinity as the removal liquid.

By supplying an alkali developer, zeta potentials of the same polarity are generated on the surface of the wafer W and the surface of the reaction product P. The reaction product P separated from the wafer W due to the change in the volume of the top coat liquid is charged with a zeta potential of the same polarity as that of the wafer W, thereby repelling each other with the wafer W. Thereby, the reattachment of the reaction product P to the wafer W is prevented.

In this way, after separating the reaction product (P) from the wafer (W) by using the volume contraction of the top coat liquid, the reaction product is generated by generating a zeta potential of the same polarity in the wafer (W) and the reaction product (P). Since the re-adhesion of (P) is prevented, the removal efficiency of the reaction product (P) can be improved.

In addition, the alkali developer should just contain at least one of ammonia, Tetra Methyl Ammonium Hydroxide (TMAH), and choline aqueous solution, for example.

Further, according to the substrate processing method according to the first embodiment, the reaction product P that has penetrated into the via hole 106, which was difficult to remove in the cleaning method using, for example, physical force can be easily removed.

Further, the top coat film formed on the wafer W is finally removed from the wafer W. Accordingly, the wafer W after the top coat film is removed is in a state before the top coat liquid is supplied, that is, the Cu wiring 102 is exposed.

<Configuration of substrate processing system>

Next, a configuration of a substrate processing system that executes the above-described substrate processing method will be described with reference to FIG. 2. 2 is a diagram showing a schematic configuration of a substrate processing system according to the first embodiment.

As shown in Fig. 2, the substrate processing system 1 according to the first embodiment includes a first processing device 2 as a pre-treatment device and a second processing device 3 as a post-treatment device. Further, the substrate processing system 1 includes a first control device 4A and a second control device 4B.

The first processing apparatus 2 performs dry etching on the wafer W or supplies a top coat liquid. Further, the second processing device 3 supplies an alkali developer to the wafer W processed by the first processing device 2.

The first control device 4A is, for example, a computer, and includes a control unit 401 and a storage unit 402. The storage unit 402 is composed of a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, and controls various types of processing executed in the first processing unit 2 Remember the program you are doing. The control unit 401 is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing unit 2 by reading and executing a program stored in the storage unit 402.

Similarly, the second control device 4B is, for example, a computer, and includes a control unit 403 and a storage unit 404. The storage unit 404 is constituted by a storage device such as RAM, ROM, and hard disk, for example, and stores programs for controlling various types of processing executed in the second processing unit 3. The control unit 403 is, for example, a CPU, and controls the operation of the second processing unit 3 by reading and executing the program stored in the storage unit 404.

In addition, these programs were recorded in a storage medium readable by a computer, and from the storage medium to the storage unit 402 of the first control device 4A or the storage unit 404 of the second control device 4B. It may be installed. Examples of storage media readable by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<Configuration of the first processing device>

Next, the configuration of the first processing device 2 will be described with reference to FIG. 3. 3 is a diagram showing a schematic configuration of the first processing device 2. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive Z-axis direction is a vertical upward direction.

As shown in FIG. 3, the first processing apparatus 2 includes a carry-in/out station 5 and a processing station 6. The carry-in/out station 5 and the processing station 6 are installed adjacent to each other.

The carrying-in/out station 5 is provided with a mounting section 10 and a conveying section 11. In the placing unit 10, a plurality of transfer containers (hereinafter referred to as carriers C) for accommodating a plurality of wafers W in a horizontal state are placed.

The transfer unit 11 is provided adjacent to the mounting unit 10 and includes a substrate transfer device 111 therein. The substrate transfer device 111 is provided with a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 111 is capable of moving in the horizontal and vertical directions and turning around a vertical axis, and using a wafer holding mechanism, the wafer (W) between the carrier (C) and the processing station (6) is ) Is returned.

Specifically, the substrate transfer device 111 takes out the wafer W from the carrier C placed on the placement unit 10, and the dry etching unit of the processing station 6 described later ( 12) Carry-in processing is performed. Further, the substrate transfer device 111 takes out the wafer W from the first liquid processing unit 14 of the processing station 6 to be described later, and places the taken out wafer W into a carrier C of the mounting unit 10. ) Is also carried out.

The processing station 6 is installed adjacent to the conveying section 11. The processing station 6 includes a dry etching unit 12, a load lock chamber 13, and a first liquid processing unit 14.

The dry etching unit 12 corresponds to an example of the pretreatment unit and performs dry etching treatment on the wafer W carried in by the substrate transfer device 111. Thereby, the via hole 106 is formed, and the Cu wiring 102 (refer FIG. 1A) inside the wafer W is exposed.

In addition, dry etching treatment is performed in a reduced pressure state. In addition, in the dry etching unit 12, after the dry etching treatment, an ashing treatment for removing unnecessary resist may be performed.

The load lock chamber 13 is configured to be capable of converting the internal pressure into an atmospheric pressure state and a reduced pressure state. A substrate transfer device (not shown) is installed inside the load lock chamber 13. The wafer W having finished processing in the dry etching unit 12 is carried out from the dry etching unit 12 by a substrate transfer device (not shown) of the load lock chamber 13, and the first liquid processing unit 14 Is brought in.

Specifically, the inside of the load lock chamber 13 is maintained under reduced pressure until the wafer W is taken out from the dry etching unit 12, and after the take-out is completed, an inert gas such as nitrogen or argon is supplied. It is converted to atmospheric pressure. Then, after switching to the atmospheric pressure state, a substrate transfer device (not shown) of the load lock chamber 13 carries the wafer W into the first liquid processing unit 14.

In this way, since the wafer W is blocked from the outside air from being taken out of the dry etching unit 12 until it is carried in the first liquid processing unit 14, the exposed Cu wiring 102 is oxidized. Is prevented.

Subsequently, the first liquid processing unit 14 performs a film forming processing liquid supplying process for supplying the top coat liquid to the wafer W. As described above, the top coat liquid supplied to the wafer W is solidified or cured while causing volume contraction to become a top coat film. As a result, the exposed Cu wiring 102 is covered with the top coat film.

The wafer W after the film forming processing liquid supply process is accommodated in the carrier C by the substrate transfer device 111 and is then transferred to the second processing device 3.

<Configuration of the second processing device>

Next, the configuration of the second processing device 3 will be described with reference to FIG. 4. 4 is a diagram showing a schematic configuration of the second processing device 3.

As shown in FIG. 4, the 2nd processing apparatus 3 is equipped with the carrying-in/out station 7 and the processing station 8. The carry-in/out station 7 and the processing station 8 are installed adjacent to each other.

The carry-in/out station 7 includes a mounting section 16 and a conveying section 17. A plurality of carriers C are mounted on the mounting unit 16.

The transfer unit 17 is provided adjacent to the mounting unit 16 and includes a substrate transfer device 171 and a transfer unit 172 therein. The substrate transfer device 171 is provided with a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 171 is capable of moving in the horizontal and vertical directions and turning around the vertical axis, and the wafer W between the carrier C and the transfer unit 172 using a wafer holding mechanism. ) Is returned.

The processing station 8 is installed adjacent to the conveying section 17. The processing station 8 includes a conveying section 18 and a plurality of second liquid processing units 19. The plurality of second liquid processing units 19 are installed side by side on both sides of the conveying unit 18.

The transfer unit 18 includes a substrate transfer device 181 therein. The substrate transfer device 181 is provided with a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 181 can move in the horizontal and vertical directions and rotate around the vertical axis, and between the transfer unit 172 and the second liquid processing unit 19 using a wafer holding mechanism. The wafer W is transferred at.

In the second processing device 3, the substrate transfer device 171 of the carry-in/out station 7 takes out the wafer W processed by the first processing device 2 from the carrier C, and takes out the wafer. (W) is mounted on the transmission unit 172. The wafer W placed on the transfer section 172 is taken out from the transfer section 172 by the substrate transfer device 181 of the processing station 8 and carried into the second liquid processing unit 19.

In the second liquid processing unit 19, a process of removing the top coat film by supplying an alkali developer to the wafer W is performed. Thereby, the reaction product P remaining on the wafer W accompanying the peeling of the top coat film is removed. Further, in the second liquid processing unit 19, the wafer W from which the top coat film has been removed is also cleaned with a chemical solution. Here, DHF (dilute hydrofluoric acid) is used as the chemical solution.

After that, the wafer W is carried out from the second liquid processing unit 19 by the substrate transfer device 181 and placed on the delivery unit 172. Then, the processed wafer W placed on the transfer unit 172 is returned to the carrier C of the placement unit 16 by the substrate transfer device 171.

<Configuration of dry etching unit>

Next, the configuration of each unit included in the first processing device 2 and the second processing device 3 described above will be described. First, a configuration of the dry etching unit 12 included in the first processing apparatus 2 will be described with reference to FIG. 5. 5 is a schematic diagram showing an example of the configuration of the dry etching unit 12.

As shown in FIG. 5, the dry etching unit 12 includes a chamber 201 having a sealed structure for accommodating the wafer W, and in the chamber 201, the wafer W is placed in a horizontal state. A mounting table 202 is installed. The mounting table 202 includes a temperature control mechanism 203 that cools or heats the wafer W to adjust the temperature to a predetermined temperature. A carry-in/out port (not shown) is formed on the side wall of the chamber 201 for carrying the wafer W into and out of the load lock chamber 13.

A shower head 204 is installed on the ceiling of the chamber 201. A gas supply pipe 205 is connected to the shower head 204. An etching gas supply source 207 is connected to the gas supply pipe 205 via a valve 206, and a predetermined etching gas is supplied from the etching gas supply source 207 to the shower head 204. The shower head 204 supplies the etching gas supplied from the etching gas supply source 207 into the chamber 201.

Further, the etching gas supplied from the etching gas supply source 207 is, for example, a CH ₃ F gas, a CH ₂ F ₂ gas, a CF ₄ gas, an O ₂ gas, an Ar gas source, or the like.

An exhaust device 209 is connected to the bottom of the chamber 201 via an exhaust line 208. The pressure inside the chamber 201 is maintained in a reduced pressure state by this exhaust device 209.

The dry etching unit 12 is configured as described above, and an etching gas is supplied from the shower head 204 into the chamber 201 while the inside of the chamber 201 is depressurized using the exhaust device 209. As a result, the wafer W placed on the mounting table 202 is dry-etched. As a result, the via hole 106 (see FIG. 1A) is formed in the wafer W, and the Cu wiring 102 is exposed.

In the dry etching unit 12, for example, after dry etching the interlayer insulating film 104 (see Fig. 1A) using the resist film as a mask, an ashing treatment for removing the resist film may be performed.

<Configuration of the first liquid treatment unit>

Next, the configuration of the first liquid treatment unit 14 included in the first treatment device 2 will be described with reference to FIG. 6. 6 is a schematic diagram showing an example of the configuration of the first liquid processing unit 14.

As shown in Fig. 6, the first liquid processing unit 14 includes a chamber 20, a substrate holding mechanism 30, liquid supply units 40_1 and 40_2, and a recovery cup 50.

The chamber 20 accommodates the substrate holding mechanism 30, the liquid supply portions 40_1 and 40_2, and the recovery cup 50. A fan filter unit (FFU) 21 is installed on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

An inert gas supply source 23 is connected to the FFU 21 via a valve 22. The FFU 21 discharges an inert gas such _{as N 2} gas supplied from the inert gas supply source 23 into the chamber 20. In this way, by using the inert gas as the down flow gas, it is possible to prevent the exposed Cu wiring 102 (see Fig. 1A) from being oxidized.

The substrate holding mechanism 30 is inserted into a rotary holding portion 31 for holding the wafer W so as to be rotatable, and a hollow portion 314 of the rotary holding portion 31, and is inserted into the wafer W. A fluid supply unit 32 for supplying gas is provided on the lower surface of ).

The rotation holding part 31 is installed approximately in the center of the chamber 20. On the upper surface of the rotation holding part 31, a holding member 311 for holding the wafer W from the side is provided. The wafer W is horizontally held in a state slightly separated from the upper surface of the rotation holding part 31 by this holding member 311.

Further, the rotation holding unit 31 includes a drive mechanism 312 composed of a motor or a belt or the like that transmits the rotation of the motor to the rotation holding unit 31. The rotation holding part 31 is rotated about a vertical axis by this drive mechanism 312. Then, when the rotation holding part 31 rotates, the wafer W held by the rotation holding part 31 rotates integrally with the rotation holding part 31. Further, the rotation holding part 31 is rotatably supported by the chamber 20 and the recovery cup 50 via the bearing 313.

The fluid supply part 32 is inserted through the hollow part 314 formed in the center of the rotation holding part 31. A flow path 321 is formed in the fluid supply unit 32, and an N ₂ supply source 34 is connected to the flow path 321 through a valve 33. Fluid source 32 is the N ₂ gas supplied from the N ₂ supply source 34 through a valve 33 and a flow path 321 is supplied to the lower face of the wafer (W).

_{The N 2} gas supplied through the valve 33 is a high temperature (for example, about 90° C.) N ₂ gas, and is used for a volatilization accelerating treatment described later.

When the substrate holding mechanism 30 receives the wafer W from a substrate transfer device (not shown) of the load lock chamber 13, in a state in which the fluid supply unit 32 is raised using a lifting mechanism (not shown), The wafer W is placed on a support pin (not shown) provided on the upper surface of the fluid supply unit 32. Thereafter, the substrate holding mechanism 30 lowers the fluid supply unit 32 to a predetermined position, and then transfers the wafer W to the holding member 311 of the rotation holding unit 31. In addition, when transferring the processed wafer W to the substrate transfer device 111, the substrate holding mechanism 30 raises the fluid supply unit 32 by using a lifting mechanism (not shown), and is placed on the holding member 311. The wafer W held by this is placed on a support pin (not shown). Then, the substrate holding mechanism 30 transfers the wafer W placed on a support pin (not shown) to the substrate transfer device 111.

The liquid supply unit 40_1 includes nozzles 41a to 41c, arms 42, and a swing lifting mechanism 43.

A DHF supply source 45a is connected to the nozzle 41a through a valve 44a, a DIW supply source 45b is connected to the nozzle 41b through a valve 44b, and a valve 44c is connected to the nozzle 41c. ), the IPA supply sources 45c are respectively connected. Further, DHF supplied from the nozzle 41a is diluted hydrofluoric acid diluted to a concentration such that it does not corrode the Cu wiring 102. Further, the arm 42 horizontally supports the nozzles 41a to 41c, and the swing lifting mechanism 43 pivots and lifts the arm 42.

This liquid supply unit 40_1 supplies a predetermined chemical liquid (here, DHF) to the wafer W from the nozzle 41a, DIW (pure water), which is a kind of rinse liquid, from the nozzle 41b, and is dried. IPA (isopropyl alcohol), which is a kind of solvent, is supplied from the nozzle 41c.

In addition, the liquid supply unit 40_2 includes nozzles 41d and 41e, an arm 42 supporting the nozzles 41d and 41e horizontally, and a swinging lifting mechanism 43 for turning and lifting the arm 42. do. The MIBC supply source 45d is connected to the nozzle 41d through the valve 44d, and the top coat liquid supply source 45e is connected to the nozzle 41e through the valve 44e.

Such a liquid supply unit 40_2 supplies MIBC (4-methyl-2-pentanol) as a solvent having affinity with the top coat liquid from the nozzle 41d to the wafer W, and the top coat liquid is nozzled. It is supplied from (41e).

MIBC is also contained in top coat liquid and has affinity with top coat liquid. Further, as a solvent having affinity with topcoat liquids other than MIBC, for example, PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), or the like may be used.

In addition, although it is assumed here that dedicated nozzles 41a to 41e are provided for each processing liquid, the nozzles may be shared by a plurality of processing liquids. However, if the nozzles are shared, for example, when the treatment liquids do not want to be mixed, a step of once discharging the treatment liquid remaining in the nozzle or piping is required, and the treatment liquid is unnecessary consumption. On the other hand, if the exclusive nozzles 41a to 41e are provided, the process of discharging the treatment liquid as described above is not required, so that the treatment liquid is not consumed unnecessarily.

The recovery cup 50 is disposed so as to surround the rotation holding part 31, and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding part 31. A drainage port 51 is formed at the bottom of the recovery cup 50, and the treatment liquid collected by the recovery cup 50 is discharged from the drainage port 51 to the outside of the first liquid treatment unit 14. do. Further, at the bottom of the recovery cup 50, _{an exhaust port 52 for discharging the N 2} gas supplied by the fluid supply unit 32 or the inert gas supplied from the FFU 21 to the outside of the first liquid processing unit 14 Is formed.

<Configuration of the second liquid treatment unit>

Next, a configuration of the second liquid processing unit 19 included in the second processing apparatus 3 will be described with reference to FIG. 7. 7 is a schematic diagram showing an example of the configuration of the second liquid processing unit 19.

As shown in FIG. 7, the second liquid processing unit 19 includes a substrate holding mechanism 70, a liquid supply unit 80, and a recovery cup 90 in the chamber 60.

The substrate holding mechanism 70 includes a rotation holding portion 71, a support column portion 72, and a driving portion 73. The rotation holding part 71 is installed approximately in the center of the chamber 60. On the upper surface of the rotation holding portion 71, a holding member 711 for holding the wafer W from the side is provided. The wafer W is horizontally held in a state slightly separated from the upper surface of the rotation holding part 71 by this holding member 711. The support column portion 72 is a member extending in the vertical direction, the base end portion is rotatably supported by the driving portion 73, and horizontally supports the rotation holding portion 71 at the tip portion. The driving part 73 rotates the support column part 72 about a vertical axis.

Such a substrate holding mechanism 70 rotates the rotation holding part 71 supported by the support column part 72 by rotating the support column part 72 using the drive part 73, thereby rotating the rotation holding part ( The wafer W held by 71) is rotated.

The liquid supply unit 80 includes nozzles 81a to 81c, an arm 82, and a swing lifting mechanism 83.

A DHF supply source 85a is connected to the nozzle 81a via a valve 84a, an alkali developer supply source 85b is connected to the nozzle 81b via a valve 84b, and a valve ( The DIW supply source 85c is connected via 84c). The arm 82 horizontally supports the nozzles 81a to 81c. The swing lifting mechanism 83 turns the arm 82 and moves it up and down.

The liquid supply unit 80 supplies DHF, which is a predetermined chemical liquid, to the wafer W from the nozzle 81a, and supplies an alkali developer, which is a removal liquid for removing the top coat film, from the nozzle 81b, and DIW as a rinse liquid. Is supplied from the nozzle 81c.

The alkali developer supplied from the nozzle 81b contains an anticorrosive agent for preventing corrosion of the Cu wiring 102. Thereby, the top coat film can be removed while suppressing damage to the Cu wiring 102 in the removal liquid supply process mentioned later. Further, DHF supplied from the nozzle 81a is diluted to a concentration such that it does not corrode the Cu wiring 102.

The recovery cup 90 is disposed so as to surround the rotation holding part 71 in order to prevent scattering of the processing liquid around the processing liquid. A drainage port 91 is formed at the bottom of the recovery cup 90, and the treatment liquid collected by the recovery cup 90 is discharged from the drainage port 91 to the outside of the second liquid treatment unit 19. do.

As described above, the second liquid processing unit 19 according to the first embodiment performs a predetermined post-processing on the removal unit for removing the top coat film from the wafer W and the wafer W from which the top coat film has been removed. It corresponds to an example of the processing unit.

<Specific operation of the substrate processing system>

Next, a specific operation of the substrate processing system 1 will be described with reference to FIG. 8. Fig. 8 is a flow chart showing a processing procedure of substrate processing according to the first embodiment. In addition, each processing sequence shown in FIG. 8 is performed based on the control of the 1st control device 4A or the 2nd control device 4B.

In the substrate processing system 1 according to the first embodiment, processing from the dry etching processing (step S101) shown in FIG. 8 to the first carrying out processing (step S107) is performed in the first processing apparatus 2. It is performed slowly, and processing from the removal liquid supply process (step S108) to the 2nd carry-out process (step S110) is performed in the 2nd processing apparatus 3.

As shown in Fig. 8, first, dry etching processing is performed in the dry etching unit 12 (step S101). In such a dry etching process, the dry etching unit 12 performs dry etching or ashing on the wafer W. As a result, the Cu wiring 102 formed inside the wafer W is exposed (see Fig. 1A).

Subsequently, the wafer W is carried into the first liquid processing unit 14. Since such carry-in processing is performed through the load lock chamber 13, oxidation of the exposed Cu wiring 102 can be prevented.

Subsequently, the chemical liquid treatment is performed in the first liquid treatment unit 14 (step S102). In such a chemical liquid treatment, the nozzle 41a of the liquid supply unit 40_1 (see Fig. 6) is located above the center of the wafer W. After that, DHF is supplied from the nozzle 41a to the wafer W. DHF supplied to the wafer W is diffused on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W.

Thereby, the surface of the Cu wiring 102 or the reaction product P is slightly dissolved by DHF, and the adhesive force of the reaction product P is weakened. Accordingly, the reaction product P can be easily removed.

Here, the chemical treatment in step S102 is performed for the purpose of making it easier to remove the reaction product P, and is performed under low etching conditions such that the reaction product P is not completely removed. The low etching condition is, for example, a condition in which etching is performed at a concentration of DHF that is shorter than the etching time required to completely remove the reaction product (P), or lower than the concentration of DHF required to completely remove the reaction product (P).

For this reason, compared with the case where the reaction product P is removed only with DHF as in the prior art, the reaction product P can be removed more effectively while suppressing the damage of the Cu wiring 102. Further, since the DHF supplied from the nozzle 41a in the first embodiment is diluted to a concentration such that it does not corrode the Cu wiring 102, damage to the Cu wiring 102 can be suppressed more reliably.

In the chemical treatment, the reaction product (P) having a relatively small particle diameter is easily removed, and in the removal of the reaction product (P) using a top coat liquid and an alkali removal solution described later, the reaction product (P) having a relatively large particle diameter is removed. It's easy to become. Therefore, by combining these treatments, the reaction product (P) can be removed more effectively.

In addition, the chemical liquid supplied from the nozzle 41a is not limited to DHF, and may be, for example, an aqueous solution containing ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide water, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, organic acid, or ammonium fluoride. do.

Subsequently, in the first liquid processing unit 14, a rinse process of cleaning the main surface of the wafer W with DIW is performed (step S103). In such a rinse process, the nozzle 41b (see FIG. 6) is located above the center of the wafer W. After that, when the valve 44b is opened for a predetermined time, DIW is supplied from the nozzle 41b to the main surface of the rotating wafer W, and the DHF remaining on the wafer W is washed away.

Subsequently, in the first liquid processing unit 14, a replacement process is performed (step S104). In such a replacement process, the nozzle 41c (see Fig. 6) is located above the center of the wafer W. After that, when the valve 44c is opened for a predetermined time, IPA is supplied from the nozzle 41c to the main surface of the rotating wafer W, and DIW on the wafer W is replaced with IPA. After that, the rotation of the wafer W is stopped while the IPA remains on the wafer W. When the replacement process is completed, the liquid supply unit 40_1 moves to the outside of the wafer W. Also, the processing of steps S102 to S104 does not necessarily need to be carried out.

Subsequently, in the first liquid processing unit 14, a solvent supply processing is performed (step S105). The solvent supply process is a process of supplying the MIBC having affinity with the top coat liquid to the wafer W before supplying the top coat liquid, which is a film forming treatment liquid, to the wafer W.

Specifically, the nozzle 41d of the liquid supply unit 40_2 is located above the center of the wafer W, and thereafter, the MIBC is supplied from the nozzle 41d to the wafer W. The MIBC supplied to the wafer W is diffused on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W.

In this way, by diffusing the MIBC having affinity with the top coat liquid on the wafer W in advance, the top coat liquid is liable to diffuse to the wafer W in the treatment liquid supply processing for film formation described later, and further It becomes easy to penetrate into the via hole 106 as well. Accordingly, the consumption amount of the top coat liquid can be suppressed, and the reaction product P that has penetrated into the via hole 106 can be removed more reliably.

MIBC has affinity with topcoat liquid, but is hardly mixed with DIW and has low affinity. In contrast, in the first liquid processing unit 14, before supplying MIBC, DIW is substituted with IPA having a higher affinity for MIBC than DIW. Thereby, compared with the case where the solvent supply treatment (step S105) is performed immediately after the rinse treatment (step S103), the MIBC is more likely to spread to the main surface of the wafer W, and the consumption of MIBC can be suppressed. have.

In addition, when the solvent having affinity with the film-forming treatment liquid has an affinity with DIW as well as the film-forming treatment liquid, the substitution treatment in step S104 may be omitted.

In this way, when it is desired to efficiently diffuse the top coat film onto the upper surface of the wafer W in a short time, it is preferable to perform the above-described solvent supply treatment. In addition, when the film-forming treatment liquid has affinity with IPA, the solvent supply treatment in step S105 may be omitted.

Subsequently, in the first liquid processing unit 14, a processing liquid supply processing for film formation is performed (step S106). In such a film forming process liquid supply process, the nozzle 41e of the liquid supply part 40_2 is located above the center of the wafer W. After that, the top coat liquid, which is a film forming processing liquid, is supplied from the nozzle 41e to the main surface of the wafer W, which is a circuit formation surface on which a resist film is not formed.

The top coat liquid supplied to the wafer W is diffused on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of the top coat liquid is formed on the entire main surface of the wafer W (see Fig. 1B). At this time, the main surface of the wafer W is in a state in which the wettability is improved by the MIBC supplied on the wafer W in step S105. Thereby, the top coat liquid easily diffuses on the main surface of the wafer W, and also easily penetrates the via hole 106. Therefore, the amount of use of the top coat liquid can be reduced, and further, the processing time can be shortened.

As the volatile component is volatilized by the rotation of the wafer W, the top coat liquid is solidified or cured. As a result, a top coat film is formed over the entire main surface of the wafer W.

Further, in the first liquid processing unit 14, a volatilization accelerating process is performed. This volatilization accelerating treatment is a treatment for further accelerating the volatilization of volatile components contained in the top coat liquid that forms a film on the entire main surface of the wafer W. Specifically, when the valve 33 (see FIG. 6) is opened for a predetermined time, a high-temperature N ₂ gas is supplied from the fluid supply unit 32 to the back surface of the rotating wafer W. Thereby, the top coat liquid is heated together with the wafer W to promote volatilization of volatile components.

In addition, the volatilization accelerating treatment may be a treatment in which the interior of the chamber 20 is decompressed by a decompression device (not shown), or may be a treatment in which the humidity in the chamber 20 is reduced by a gas supplied from the FFU 21. Volatilization of volatile components can also be promoted by these treatments.

In addition, although an example in the case where the first liquid processing unit 14 performs the volatilization accelerating process is shown here, the volatilization accelerating process can be omitted. That is, the wafer W may be put on standby in the first liquid processing unit 14 until the top coat liquid is naturally solidified or cured. In addition, volatilization of the top coat liquid may be promoted by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed such that the main surface of the wafer W is not exposed due to the top coat liquid being shaken off. .

Subsequently, in the first liquid processing unit 14, a first carrying out processing is performed (step S107). In such a first carrying out process, the substrate transfer device 111 takes out the wafer W from the first liquid processing unit 14, transfers it to the placement section 10, and places the carrier C placed on the placement section 10. ).

At this time, the exposed Cu wiring 102 of the wafer W is covered with a top coat film in a short time after dry etching (see Fig. 1C). That is, since the Cu wiring 102 is blocked from outside air, it is not adversely affected by oxidation or the like.

Therefore, according to the substrate processing system 1 according to the first embodiment, since time management for observing the Q-time from dry etching to cleaning becomes unnecessary, productivity can be improved.

The wafer W accommodated in the carrier C is conveyed from the first processing device 2 to the placement unit 16 of the second processing device 3. After that, the wafer W is taken out from the carrier C by the substrate transfer device 171 (see FIG. 4) of the second processing device 3, and the transfer unit 172 and the substrate transfer device 181 are removed. It is carried in to the 2nd liquid processing unit 19 via the way.

In the second liquid processing unit 19, first, a removal liquid supply process is performed (step S108). In such a removal liquid supply process, the nozzle 81b (refer FIG. 7) is located above the center of the wafer W. Thereafter, the valve 84b is opened for a predetermined period of time, so that an alkali developer, which is a removal liquid, is supplied from the nozzle 81b onto the rotating wafer W. Thereby, the top coat film formed on the wafer W is peeled off and dissolved and removed from the wafer W.

At this time, the reaction product P remaining on the wafer W is peeled off and removed from the wafer W. In addition, at this time, since the zeta potential of the same polarity is generated in the wafer W and the reaction product P, the wafer W and the reaction product P are repelled to the wafer W of the reaction product P. Reattachment is prevented.

In addition, an anticorrosive agent for preventing corrosion of the Cu wiring 102 is contained in the alkaline developer. For this reason, even if an alkali developer adheres to the Cu wiring 102, corrosion of the Cu wiring 102 can be suppressed. Therefore, according to the substrate processing system 1 according to the first embodiment, it is possible to remove the top coat film while suppressing damage to the Cu wiring 102.

Subsequently, the chemical liquid treatment is performed in the second liquid treatment unit 19 (step S109). In such chemical liquid treatment, the nozzle 81a (see Fig. 7) is located above the center of the wafer W. After that, DHF is supplied from the nozzle 81a to the wafer W. The DHF supplied to the wafer W is diffused on the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W.

In this way, by performing the chemical treatment after the removal liquid supply treatment, that is, after the top coat film has been removed, the reaction product (P) that was not removed by the peeling of the top coat film (particularly, the reaction product (P) having a small particle diameter) is present. In some cases, this reaction product (P) can be removed. Even in such a case, compared with general chemical cleaning, the reaction product P can be more effectively removed while suppressing erosion on the wafer W. Further, if the reaction product P is sufficiently removed by the removal liquid supply treatment, the chemical liquid treatment in step S109, that is, wet cleaning may be omitted.

Upon completion of the chemical treatment, the second liquid treatment unit 19 supplies DIW from the nozzle 81c to the wafer W to perform a rinse treatment of cleaning the main surface of the wafer W. Thereby, the reaction product P floating in the dissolved top coat film or the alkali developer is removed from the wafer W together with DIW. In addition, when the rinsing treatment is finished, the second liquid processing unit 19 increases the rotational speed of the wafer W for a predetermined period of time to remove the DIW remaining on the main surface of the wafer W, thereby drying the wafer W. The processing is done. After that, the rotation of the wafer W is stopped.

Then, in the second liquid processing unit 19, a second carrying out processing is performed (step S110). In this second carrying out process, the wafer W is taken out from the second liquid processing unit 19 by the substrate transfer device 181 (see Fig. 4), and the transfer unit 172 and the substrate transfer device 171 are Via the way, it is accommodated in the carrier C placed on the placement unit 16. When this second carrying out processing is completed, a series of substrate processing for one wafer W is completed.

As described above, the substrate processing system 1 according to the first embodiment includes a placement unit 10, a liquid supply unit 40_2 (corresponding to an example of a processing liquid supply unit), and a substrate transfer device 111. The placing unit 10 places a carrier C capable of accommodating a plurality of wafers W. The liquid supply unit 40_2 contains a volatile component for forming a film on the wafer W after dry etching or after ashing in which at least a part of the Cu wiring 102 formed therein is exposed. Supply top coat liquid, which is a treatment liquid. The substrate transfer device 111 conveys the wafer W in which the top coat liquid is solidified or cured by volatilization of the volatile component to the mounting unit 10, and is accommodated in the carrier C placed on the mounting unit 10. .

Therefore, according to the substrate processing system 1 according to the first embodiment, the Q-time management from exposure to cleaning of the Cu wiring 102 becomes easy, and productivity can be improved.

(Second Example)

By the way, in a semiconductor manufacturing process, the back surface of the wafer W may be subjected to a back surface treatment such as cleaning. However, in this case, there is a concern that the main surface of the wafer W may be contaminated by scattering or penetrating the cleaning liquid or the like used for the back surface treatment on the main surface of the wafer W.

Therefore, after forming a top coat film on the main surface of the wafer W, i.e., while the main surface of the wafer W is protected by the top coat film, the back surface of the wafer W is processed, thereby It is good also as preventing contamination of the main surface.

This point will be described with reference to FIGS. 9A and 9B. 9A and 9B are diagrams showing an example of a back surface cleaning process.

9A, the fluid supply unit 32 provided in the first liquid treatment unit 14A is connected to the N ₂ supply source 34 via a valve 33, and further, via the valve 35 It is also connected to the SC1 supply source 36. The fluid source 32, N ₂ source (34) N SC1 wafer (W) the (ammoniahgwa number) supplied to the _second gas is supplied to the back surface of the wafer (W), also from SC1 supply source 36 is supplied from the It supplies to the back side of.

The first liquid processing unit 14A performs the process of step S106 shown in Fig. 8, that is, after the top coat film is formed on the entire main surface of the wafer W, and then performs the back surface cleaning process shown in Fig. 9B.

In such a back surface cleaning process, the valve 35 is opened for a predetermined time, so that SC1 is supplied from the fluid supply unit 32 to the back surface of the rotating wafer W. Thereby, the back surface of the wafer W is cleaned.

In this way, by cleaning the back surface of the wafer W while the entire main surface of the wafer W is covered by the top coat film, for example, even if the cleaning liquid is scattered during the back surface cleaning process, the main surface of the wafer W is It is possible to prevent contamination of the main surface of the wafer W due to adhesion of the cleaning liquid. In addition, contamination of the main surface of the wafer W due to penetration of the cleaning liquid can be prevented.

In FIGS. 9A and 9B, an example in which a cleaning liquid such as SC1 is supplied to the back surface of the wafer W is performed as a back surface cleaning process, but the back surface cleaning process is not limited to the above process. For example, scrub cleaning using a cleaning body such as a brush may be performed as a back surface cleaning treatment.

An example in the case of performing scrub cleaning as the back surface cleaning treatment will be described with reference to FIG. 10. 10 is a diagram showing another example of the back surface cleaning process.

When scrub cleaning is performed as the back surface cleaning process, the first liquid processing unit 14B shown in Fig. 10 first performs the processing of steps S101 to S106 shown in Fig. 8.

Subsequently, the wafer W is once taken out from the first liquid processing unit 14B by the substrate transfer device 111 and then transferred to an inversion mechanism (not shown). Then, the wafer W is carried back into the first liquid processing unit 14B by the substrate transfer device 111 after the front and back are reversed by such a reversing mechanism. Moreover, the reversing mechanism is provided in the processing station 6 of the 1st processing apparatus 2, for example. Any known technique may be used as the configuration of the reversing mechanism.

Next, as shown in FIG. 10, the first liquid processing unit 14B holds the wafer W with the front and back inverted by the substrate holding mechanism 30 and rotates the wafer W using the brush 500. The back side of (W) is scrubbed and washed. Specifically, the first liquid treatment unit 14B removes foreign matter adhering to the back surface of the wafer W by moving the brush 500 while the rotating brush 500 is in contact with the back surface of the wafer W. do.

At this time, the main surface of the wafer W is in a state where the entire surface is covered with the top coat film. For this reason, there is no fear that foreign matters removed from the back surface of the wafer W adhere to the main surface of the wafer W. _{Further, a fluid such as N 2} gas may be supplied from the fluid supply unit 32 to prevent adhesion of foreign matter to the top coat film.

The wafer W after the scrub cleaning is carried out from the first liquid processing unit 14B by the substrate transfer device 111, is reversed again by an inversion mechanism (not shown), and then accommodated in the carrier C. .

In addition, although the brush 500 was used here, scrub cleaning may be performed using another cleaning body such as a sponge.

Further, a process of removing particles on the back surface of the wafer W by spraying gas clusters on the back surface of the wafer W may be performed as a back surface cleaning process. This point will be described with reference to FIG. 11. 11 is a diagram showing another example of the back surface cleaning process.

As shown in FIG. 11, the 1st liquid processing unit 14C is provided with the nozzle 600. The nozzle 600 generates a gas cluster that is an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion by injecting carbon dioxide, which is a cleaning gas, at high pressure.

The nozzle 600 includes a pressure chamber 601 formed in, for example, a substantially cylindrical shape such that the lower end is opened. The lower end of the pressure chamber 601 is configured to form an orifice portion 602. A gas diffusion portion 603 whose diameter increases as it faces downward is connected to the orifice portion 602. The opening diameter in the orifice portion 602 is, for example, about 0.1 mm.

One end of a gas supply path 604 is connected to the upper end of the pressure chamber 601, and a carbon dioxide supply source 606 is connected to the gas supply path 604 via a pressure regulating valve 605.

The first liquid processing unit 14C reverses the wafer W on which the top coat film has been formed in the same processing procedure as in the case of performing the above-described scrub cleaning, and then holds the wafer W in the substrate holding mechanism 30 and rotates it. Then, the first liquid treatment unit 14C supplies carbon dioxide to the nozzle 600 at a pressure higher than the pressure in the chamber 20 of the first liquid treatment unit 14C. When carbon dioxide is ejected from the nozzle 600 into the chamber 20, it is cooled to below the condensing temperature by rapid adiabatic expansion, and the molecules M1 of each other are combined by van der Waals force, and the gas cluster M2 ).

The gas cluster M2 is ejected vertically toward the back surface of the wafer W, and the foreign matter adhering to the back surface of the wafer W is blown off and removed. At this time, the main surface of the wafer W is in a state where the entire surface is covered with the top coat film. For this reason, there is no fear that foreign matters removed from the back surface of the wafer W adhere to the main surface of the wafer W.

The wafer W after cleaning by the gas cluster M2 is carried out from the first liquid processing unit 14C by the substrate transfer device 111, and is reversed again by an inversion mechanism (not shown), and then the carrier It is accepted in (C).

In addition to the above-described treatment, the back surface cleaning treatment may be, for example, two-fluid cleaning using a two-fluid nozzle in which a cleaning solution is misted with gas and sprayed onto the back surface of the wafer W, or ultrasonic cleaning using an ultrasonic vibrator or the like. do.

In addition, the treatment performed while the main surface of the wafer W is covered by the top coat film is not limited to the back surface cleaning treatment, and may be, for example, an etching treatment of etching the back surface or the bevel portion of the wafer W using a chemical solution. do. The etching treatment is a treatment for removing an oxide film using, for example, hydrofluoric acid (HF) or the like. By performing the etching process while the main surface of the wafer W is covered with the top coat film, even if the chemical liquid penetrates from the back side of the wafer W to the main surface side, the main surface of the wafer W is protected by the top coat film. It is not etched because it is in the state of being used. In this way, since the etching region is determined by the top coat film, etching can be performed with high precision.

Further, the treatment performed while the main surface of the wafer W is covered with the top coat film may be a polishing treatment in which the back surface or the bevel portion of the wafer W is polished using a polishing brush.

In this way, by treating the other side of the wafer W while the main surface of the wafer W is covered with the top coat film, the other side of the wafer W is prevented from being contaminated with the main surface of the wafer W. You can handle it.

In the above example, an example in which the first liquid processing units 14A to 14C corresponds to an example of the other surface processing unit has been described. That is, in the above example, an example in which the first liquid treatment units 14A to 14C performs a back surface cleaning treatment in addition to the film forming treatment liquid supply treatment has been described. However, the 1st processing apparatus 2 may be provided with the 1st liquid processing unit 14 and the back surface cleaning unit which performs the back surface cleaning process separately.

In addition, the other surface treatment such as back surface cleaning treatment may be performed in the second processing device 3. In this case, a nozzle or brush for cleaning the back surface may be mounted in the second liquid treatment unit 19, or a rear treatment unit separate from the second liquid treatment unit 19 may be provided in the second treatment device 3 do.

(Third Example)

Incidentally, a configuration for performing the film forming treatment liquid supply treatment or the removal liquid supply treatment may be additionally provided to an existing pre-treatment device or post-treatment device that does not have these configurations. In the third embodiment, this point will be described. 12 is a diagram showing a schematic configuration of a first processing apparatus according to a third embodiment.

As shown in Fig. 12, the first processing apparatus 2A includes a first block 2A1, a second block 2A2, and a connection portion 2A3.

The first block 2A1 includes a carry-in/out station 5 and a processing station 6. Since the carry-in/out station 5 is the same as the carry-in/out station 5 provided in the first processing apparatus 2 according to the first embodiment, the description here is omitted.

A plurality of dry etching units 12 are arranged in the processing station 6 of the first block 2A1. In addition, unlike the treatment station 6 of the first treatment device 2 according to the first embodiment, the first liquid treatment unit 14 is not disposed in the treatment station 6 of the first block 2A1. not.

The second block 2A2 includes a conveyance section 11' and a plurality of first liquid processing units 14. The transfer unit 11 ′ is provided with the same substrate transfer device 112 as the substrate transfer device 111, and the wafer W with respect to the first liquid processing unit 14 using such a substrate transfer device 112 Carrying in and out is carried out.

The connecting part 2A3 connects the conveying part 11 of the 1st block 2A1 and the conveying part 11' of the 2nd block 2A2. This connection portion 2A3 has an inner space that is isolated from the atmosphere. The interior space is blocked from the atmosphere by being filled with an inert gas such _{as N 2 gas.} In addition, a mounting table (not shown) is installed in the interior space.

In this first processing apparatus 2A, the wafer W having finished processing in the dry etching unit 12 is taken out from the dry etching unit 12 by the substrate transfer device 111, and then the connection portion 2A3 ) Is wit not shown in the wit.

The wafer W placed on the mounting table is taken out from the mounting table by the substrate transfer device 112 of the second block 2A2, and then transferred to the first liquid processing unit 14, and the first liquid processing unit By (14), the processing of steps S102 to S106 shown in Fig. 8 is performed. As a result, a top coat film is formed on the main surface of the wafer W.

Thereafter, the wafer W is taken out from the first liquid processing unit 14 by the substrate transfer device 112, and then the substrate is transferred from the substrate transfer device 112 via a mounting table (not shown) of the connecting portion 2A3. It is conveyed to the conveyance apparatus 111, and is accommodated in the carrier C placed on the mounting part 10 by the substrate conveyance apparatus 111.

In this way, the first liquid processing unit 14 that performs the film-forming processing liquid supply processing includes the first block 2A1 including the mounting unit 10, the substrate transfer device 111, and the dry etching unit 12 It is a separate body, and you may arrange|position with respect to the 2nd block 2A2 which is connected via such a 1st block 2A1 and the connection part 2A3. That is, the first liquid treatment unit 14 may be installed later with respect to an existing pretreatment apparatus not provided with the first liquid treatment unit 14.

In this case, when the wafer W after dry etching is transferred from the first block 2A1 to the second block 2A2 by blocking the inner space of the connection part 2A3 from the atmosphere, the Cu wiring exposed by dry etching It can suppress the oxidation of (102).

In addition, like the inner space of the connection part 2A3, the inside of the conveying parts 11 and 11' of the first block 2A1 and the second block 2A2 may be blocked from the atmosphere by _{, for example, filling with N 2 gas.} do. Accordingly, oxidation of the exposed Cu wiring 102 can be further suppressed.

In addition, in the above example, it is assumed that the conveyance part 11 of the 1st block 2A1 and the conveyance part 11' of the 2nd block 2A2 are connected by the connection part 2A3. However, in the first processing apparatus 2A, for example, the dry etching unit 12 of the first block 2A1 and the first liquid processing unit 14 of the second block 2A2 are connected by a connection portion 2A3. You may have. In this case, a substrate transfer device (not shown) is disposed in the inner space of the connection portion 2A3, and the wafer W is transferred between the dry etching unit 12 and the first liquid processing unit 14 by such a substrate transfer device. Just do it. In addition, in this case, the second block 2A2 does not have to have the conveyance part 11'.

Next, a modified example of the second processing device will be described with reference to FIG. 13. 13 is a diagram showing a schematic configuration of a second processing apparatus according to the third embodiment.

As shown in Fig. 13, the second processing apparatus 3A includes a first block 3A1, a second block 3A2, and a connection portion 3A3.

The first block 3A1 includes a carry-in/out station 7 and a processing station 8. The carry-in/out station 7 is the same as the carry-in/out station 7 provided in the second processing apparatus 3 according to the first embodiment.

A plurality of second liquid processing units 19A are arranged in the processing station 8 of the first block 3A1. The second liquid treatment unit 19A has a configuration relating to a removal liquid supply treatment from the second liquid treatment unit 19 according to the first embodiment, specifically, a nozzle 81b, a valve 84b, and an alkali developer supply source 85b. It has an excluded configuration.

The second block 3A2 includes a conveyance section 18' and a plurality of removal units 700. The transfer unit 18' is provided with the same substrate transfer device 182 as the substrate transfer device 181, and the wafer W is carried in and out of the removal unit 700 using the substrate transfer device 182. Do.

The removal unit 700 is from the second liquid treatment unit 19 according to the first embodiment, a nozzle 81a, a valve 84a, a DHF supply source 85a, a nozzle 81c, a valve 84c, and a DIW supply source. (85c) has a configuration excluded.

The connection part 3A3 connects the conveyance part 18 of the 1st block 3A1 and the conveyance part 18' of the 2nd block 3A2. This connection part 3A3 has an inner space that is isolated from the atmosphere. The interior space is blocked from the atmosphere by being filled with an inert gas such _{as N 2 gas.} In addition, a mounting table (not shown) is installed in the interior space.

In this second processing device 3A, the wafer W is conveyed from the carrying-in/out station 7 to the conveying section 18 of the processing station 8, and then the connection section 3A3 is carried out by the substrate conveying device 181. It is wit not shown in the wit of the wit.

The wafer W placed on the placement table is taken out from the placement table by the substrate transfer device 182 of the second block 3A2, and then transferred to the removal unit 700, and the removal liquid is removed by the removal unit 700. The supply process (step S108 in Fig. 8) is performed. Thereby, the top coat film is removed from the main surface of the wafer W.

Thereafter, the wafer W is taken out from the removal unit 700 by the substrate transfer device 182, and then from the substrate transfer device 182 via a mounting table (not shown) of the connecting portion 3A3. 181). And the wafer W is conveyed to the 2nd liquid processing unit 19A by the substrate conveyance device 181, and the processing of the chemical liquid processing (step S109 of FIG. 8) by the 2nd liquid processing unit 19A After is performed, it is accommodated in the carrier C by the 2nd carry-out process (step S110 of FIG. 8).

In this way, the removal unit 700 that performs the removal liquid supply process includes the first block 3A1 including the placement unit 16, the substrate transfer device 181, and the second liquid processing unit 19A that performs the chemical liquid treatment. It is a separate body, and may be disposed with respect to the second block 3A2 connected via the first block 3A1 and the connecting portion 3A3. That is, the removal unit 700 may be additionally installed for an existing post-treatment apparatus not provided with the removal unit 700.

In this case, by blocking the inner space of the connection part 3A3 from the atmosphere, when the wafer W after the removal treatment is transferred from the second block 3A2 to the first block 3A1, the exposed Cu wiring 102 It can inhibit oxidation. Moreover, the 2nd processing apparatus 3A may cut off the inside of the conveyance parts 18 and 18' of the 1st block 3A1 and 2nd block 3A2 from the atmosphere.

Further, the second block 3A2 may be provided with the same carry-in/out station as the carry-in/out station 7. In this case, the wafer W on which the top coat film is formed is carried into the second block 3A2 from the carrying-in/out station of the second block 3A2, and the top coat film is removed from the wafer W by the removal unit 700. Thereafter, the wafer W is transferred to the first block 3A1 via the connecting portion 3A3. Thereby, the transfer efficiency of the wafer W can be improved.

(Fourth Example)

In the above-described embodiment, an example in which the top coat film is removed from the wafer W by supplying an alkali developer as a removal liquid to the top coat film has been described. However, the method of removing the top coat film from the wafer W is not limited to the above example. Hereinafter, another example of the removal process for removing the top coat film from the wafer W will be described. 14 is a diagram showing a schematic configuration of a second processing apparatus according to the fourth embodiment.

As shown in Fig. 14, the second treatment apparatus 3B according to the fourth embodiment includes a plurality of second liquid treatment units 19B and a plurality of removal units 710 in the treatment station 8. .

The second liquid treatment unit 19B has the same configuration as the second liquid treatment unit 19A according to the third embodiment. That is, in the second liquid treatment unit 19B, a nozzle 81b, a valve 84b, and an alkali developer supply source 85b, which are configurations related to the removal liquid supply treatment from the second liquid treatment unit 19 according to the first embodiment, are provided. It has an excluded configuration.

The removal unit 710 removes the film formed on the wafer W by sublimation. Here, the configuration of the removal unit 710 will be described with reference to FIG. 15. 15 is a schematic diagram showing an example of the configuration of a removal unit 710 according to the fourth embodiment.

In addition, in the fourth embodiment, a solution of a sublimable substance is used as the film-forming treatment liquid. As the sublimable substance, for example, ammonium silicide, camphor, naphthalene, or the like can be used. The film-forming treatment liquid is obtained by dissolving the above-described sublimable substance in a volatile solvent such as IPA. Such a film-forming treatment liquid is solidified or cured by volatilization of IPA as a solvent to form a film. In addition, the film-forming treatment liquid may contain pure water in addition to the sublimable substance and IPA.

As shown in FIG. 15, the removal unit 710 includes a heating plate 701 in which a heater 702 is embedded, and a plurality of support pins 703 protruding from an upper surface of the heating plate 701. The support pin 703 supports the periphery of the lower surface of the wafer W. Thereby, a small gap is formed between the lower surface of the wafer W and the upper surface of the hot plate 701.

An exhaust hood 704 that can be moved up and down is installed above the hot plate 701. The exhaust hood 704 has an opening in the center. An exhaust pipe 705 in which a sublimable material recovery device 706 and a pump 707 are interposed is connected to such an opening. In addition, as the sublimable substance recovery device 706, a sublimable substance is deposited on a cooling plate installed in a chamber through which the exhaust gas flows, or a cooling fluid is supplied to the gas of the sublimable substance in the chamber through which the exhaust air flows. Various well-known sublimable substance recovery apparatuses, such as those of a contact type, can be used.

When the wafer W is placed on the support pin 703 by the substrate transfer device 181, the removal unit 710 lowers the exhaust hood 704 to provide a processing space between the hot plate 701 and the wafer W. To form. Subsequently, the removal unit 710 sucks the space above the wafer W by a pump 707 interposed in the exhaust pipe 705 connected to the exhaust hood 704 and is heated by the heated plate 701. The wafer W is heated to a temperature higher than the sublimation temperature of the chemical conversion material.

Thereby, the sublimable material on the wafer W is sublimated and removed from the wafer W. At this time, the sublimable substance that has been sublimated to become a gas is recovered by the sublimable substance recovery device 706 and reused. After that, the wafer W is taken out from the removal unit 710 by the substrate transfer device 181 and transferred to the second liquid processing unit 19B.

As described above, the second processing apparatus 3B heats the wafer W to a temperature higher than the sublimation temperature of the sublimable material contained in the film forming processing liquid, thereby transferring the solidified or cured film forming processing liquid to the wafer W. A treatment to remove from may be performed as a removal treatment. In addition, the sublimation method here is an example, and it may be configured to directly overheat the sublimable material itself, not the substrate, by gas or the like. Further, depending on the sublimation temperature of the sublimable substance, the heat treatment may be omitted.

(Fifth Example)

In the above-described embodiment, as a post-treatment after removing the solidified or cured film-forming treatment liquid from the wafer W, a case where the chemical liquid treatment is performed has been described. However, the post-treatment is not limited to the chemical solution treatment. In the fifth embodiment, an example in which dry etching treatment is performed as a post treatment will be described with reference to FIG. 16. 16 is a diagram showing a schematic configuration of a second processing apparatus according to the fifth embodiment.

As shown in FIG. 16, the second processing apparatus 3C according to the fifth embodiment includes a plurality of removal units 720 and a plurality of dry etching units 800 in the processing station 8.

The removal unit 720 has the same configuration as the removal unit 710 according to the fourth embodiment, and removes the solidified or cured film forming treatment liquid from the wafer W by sublimation. In addition, the removal unit 720 may have the same configuration as the removal unit 700 according to the third embodiment, and remove the solidified or cured film forming treatment liquid from the wafer W by a removal liquid such as an alkali developer. do.

The dry etching unit 800 has the same configuration as the dry etching unit 12 according to the first embodiment, and is used to dry the wafer W from which the film-forming liquid solidified or cured by the removal unit 720 has been removed. Etching treatment is performed. The wafer W after the dry etching process is accommodated in the carrier C by the second carrying out process (step S110 in Fig. 8).

In this way, the 2nd processing apparatus 3C may perform dry etching processing as a post-process. That is, it is possible to add the above-described film forming treatment liquid supply treatment and removal treatment to the process of performing dry etching treatment in the pretreatment and further performing dry etching treatment in the post treatment thereafter.

Further, as such a process, for example, a process of performing a hard mask etching for etching the hard mask as a pretreatment and then performing a main etching for etching a film to be processed on the wafer W as a post-treatment may be mentioned. By applying the above-described film forming treatment liquid supply treatment and removal treatment to such a process, it is possible to prevent the growth of the reaction product P after hard mask etching or stabilize the shape of the film to be processed during main etching.

When the removal by sublimation described in the fourth embodiment is performed as the removal treatment, it is also possible to perform the removal treatment in the dry etching unit 800.

(Sixth Example)

In the above-described embodiment, with respect to the process of performing a dry etching treatment as a pretreatment and further performing a chemical liquid treatment or a dry etching treatment as a post-treatment, a film forming treatment liquid supplying treatment for supplying the film forming treatment liquid to the wafer W after the pretreatment. And a case of applying a removal treatment for removing the solidified or cured film forming treatment liquid from the wafer W has been described. However, the treatment liquid supply treatment and removal treatment for film formation are not limited to the above processes, and various processes performed in FEOL (Front End Of Line), MEOL (Middle End Of Line), and BEOL (Back End Of Line) Can be applied.

Therefore, in the sixth embodiment, a process to which a film forming treatment liquid supply treatment and a removal treatment is applied will be described with reference to FIG. 17. 17 is a diagram showing an example of a process to which a film forming treatment liquid supply treatment and a removal treatment are applied.

The film forming processing liquid supply processing and removal processing are applied to a process requiring atmosphere management or time management for the wafer W after the pretreatment. Here, the atmosphere management means, for example, maintaining the atmosphere surrounding the wafer W after the pretreatment in an inert atmosphere. In addition, time management is Q-time management, which manages with a limit on the time from pre-processing to post-processing.

That is, in the process to which the film forming treatment liquid supply treatment and the removal treatment are applied, the above-described atmosphere management or time management can be achieved by performing as a pretreatment a treatment of forming a portion deteriorated by exposure to the atmosphere on the surface of the wafer W. This is a necessary process. By applying the film-forming treatment liquid supply treatment and removal treatment to such a process, the portion that is deteriorated by exposure to the atmosphere can be covered with the solidified or cured film-forming treatment liquid to block it from the atmosphere. You can do it unnecessary.

As shown in Fig. 17, as a process to which a film forming treatment liquid supply treatment and removal treatment is applied, there is a process of performing wet cleaning (post treatment) after dry etching (pretreatment). As such a process, for example, after exposing the process described in the first embodiment, that is, the metal layer inside the wafer W (not limited to Cu, but also includes Co (cobalt) or W (tungsten), etc.) by dry etching. , A process of post-cleaning the wafer W with a chemical solution. In addition, _{after patterning Si, SiO 2} or SiN or a polysilicon gate electrode or HKMG (High-k/Metal Gate) by dry etching, the wafer W is post-cleaned with a chemical solution, or a contact A process of post-cleaning the wafer W with a chemical solution after forming the hole by dry etching is also included. By applying the treatment liquid supply treatment and removal treatment for film formation to such a process, for example, the growth of the reaction product after the pretreatment can be suppressed. In addition, the pretreatment can be said to be the same as above not only for dry etching but also for ashing.

In addition, as a process to which the film forming treatment liquid supply treatment and removal treatment are applied, there is a process of performing dry etching (post-treatment) after dry etching (pre-treatment). As such a process, the process described in the fifth embodiment can be mentioned, for example. Even in such a case, the growth of the reaction product after the pretreatment can be suppressed by applying the treatment liquid supply treatment and removal treatment for film formation.

Further, as a process to which the treatment liquid supply treatment and removal treatment for film formation are applied, there is a process of performing film formation (post treatment) after film formation (pretreatment). As such a process, for example, after forming a TiN layer on the wafer W, further forming a W layer on the wafer W, or after forming a TaN layer on the wafer W, furthermore the wafer W And a process of forming a Cu layer on the film.

Here, among the film forming apparatuses that perform the film forming process, the film forming apparatus used for pretreatment is disposed in a processing station of the first processing apparatus, and the film forming apparatus used for post-processing is disposed in the processing station of the second processing apparatus. As the film forming apparatus, for example, a plasma CVD apparatus can be used, but any other known technique may be used.

In addition, when a plasma CVD apparatus is used as a film forming apparatus for post-processing, and removal by sublimation described in the fourth embodiment is performed as a removal process, it is possible to perform a removal process in the plasma CVD apparatus. In addition, when a film forming apparatus that performs film formation by a wet process is used as the film forming apparatus of the pretreatment, it is possible to perform a film forming treatment liquid supply process in such a film forming apparatus.

Further, as a process to which the treatment liquid supply treatment and removal treatment for film formation are applied, there is a process of performing film formation (post treatment) after wet cleaning (pretreatment). Examples of such a process include, for example, a process of pre-cleaning the wafer W with a chemical solution to remove foreign substances such as oxide films or particles from the wafer W, and then forming a metal film such as a barrier metal on the wafer W. have. By applying the film-forming treatment liquid supply treatment and removal treatment to such a process, for example, oxidation of the formed metal film or adhesion of particles to the wafer W can be prevented.

In the case of applying the film forming treatment liquid supply treatment and removal treatment to a process in which wet cleaning is performed as a pretreatment, it is preferable to perform the removal by sublimation described in the fourth embodiment as the removal treatment.

That is, by performing the film-forming treatment liquid supply treatment after wet cleaning to form a film of the film-forming treatment liquid on the wafer W, pattern collapse during drying can be prevented. Further, by removing the film of the film-forming treatment liquid by sublimation in the removal process, the film of the film-forming treatment liquid can be removed from the wafer W without destroying the pattern.

The point of performing the other surface processing described in the second embodiment, the configurations of the first processing device and the second processing device described in the third embodiment, and the sublimation removal processing described in the fourth embodiment are performed for each of the processes shown in FIG. Appropriately applicable.

(Other examples)

In the above-described embodiments, examples in the case of using a top coat liquid or a solution of a sublimable substance as the film-forming treatment liquid were described, but the film-forming treatment liquid is not limited to these.

For example, the treatment liquid for film formation may be a treatment liquid containing a phenol resin. Since such a phenolic resin also causes curing shrinkage similarly to the acrylic resin described above, it is effective in that it imparts a tensile force to the reaction product (P) similarly to the top coat liquid.

As a film-forming treatment liquid containing a phenol resin, there is, for example, a resist liquid. The resist liquid is a film forming processing liquid for forming a resist film on the wafer W. Specifically, the resist liquid contains a novolac-type phenol resin.

In addition, when a resist liquid is used as a film forming treatment liquid, a thinner capable of dissolving the resist liquid may be used as the removal liquid. When using a thinner as the removal liquid, it is possible to omit the rinse treatment after the removal liquid supply treatment. In addition, when the resist liquid is used as the film forming treatment liquid, the removal liquid may be supplied after performing exposure treatment such as full surface exposure to the resist film formed on the wafer W. In this case, the removal liquid may be a developer or a thinner.

The synthetic resin contained in the film-forming treatment liquid may be cured and contracted, and is not limited to the acrylic resin or phenol resin described above. For example, synthetic resins included in the film forming treatment liquid include epoxy resin, melanin resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyacetic acid. Vinyl, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, nylon, polyacetal, polycarbonate, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene Sulfide, polysulfone, polyether ether ketone, polyamide imide, etc. may be sufficient.

Further, an antireflection film liquid may be used as the film forming treatment liquid. The antireflection film liquid is a film forming liquid for forming an antireflection film on the wafer W. In addition, the antireflection film is a protective film for reducing surface reflection of the wafer W and increasing the transmittance. When such an antireflection film liquid is used as a film forming treatment liquid, DIW capable of dissolving the antireflection film liquid can be used as a removal liquid.

In addition, the film-forming treatment liquid may further contain a predetermined chemical solution for dissolving foreign substances adhering to the wafer W or the material constituting the wafer W or the wafer W in addition to the volatile component and the synthetic resin. do. The "material formed on the wafer W" is, for example, the Cu wiring 102, and the "foreign substance adhering on the wafer W" is, for example, a reaction product P. In addition, examples of the "predetermined chemical liquid" include an aqueous solution containing hydrogen fluoride, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide water, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, organic acid or ammonium fluoride. Since the surface of the reaction product P is dissolved by these chemicals, the adhesion of the reaction product P is weakened, so that the reaction product P can be easily removed.

The "predetermined chemical liquid" is used under the condition that the amount of etching is small compared to the chemical liquid in general chemical liquid cleaning in which cleaning is performed using only the chemical action of the chemical liquid. For this reason, the reaction product P can be removed more effectively while suppressing the erosion on the wafer W compared to general chemical cleaning.

Further, in the above-described embodiment, an example in which an alkali developer is used as the removal liquid has been described, but the removal liquid may be obtained by adding hydrogen peroxide water to the alkali developer. In this way, by adding hydrogen peroxide water to the alkaline developer, it is possible to suppress the surface roughness of the wafer W by the alkaline developer.

In addition, the removal liquid may be an organic solvent such as thinner, toluene, acetic acid esters, alcohols, glycols (propylene glycol monomethyl ether), or an acidic developer such as acetic acid, uremic acid, or hydroxy acetic acid.

In addition, the removal liquid may further contain a surfactant. Since the surfactant has a function of weakening the surface tension, reattachment of the reaction product P to the wafer W can be suppressed.

Further, in the above-described embodiment, an example in which the metal wiring formed inside the wafer W is the Cu wiring 102 has been described, but the metal wiring is not limited to the Cu wiring 102. In this case, the removal liquid for the top coat film may contain an anticorrosive agent according to the type of metal wiring.

Further, in the above-described embodiment, an example in which the dry etching target material is a metal wiring is illustrated, but the dry etching target material or structure is not limited to metal wiring. Further, the substrate treatment method according to the first embodiment can also be applied to the removal of the reaction product after the resist is removed by ashing. For example, it is effective for cleaning a wafer after ion implantation is performed using a resist pattern as a mask and the resist is removed by ashing.

In addition, in the above-described embodiment, an example in which the chemical solution treatment is performed before and after the treatment liquid supply treatment for film formation and after the removal liquid supply treatment is shown, but the chemical liquid treatment is performed either before the treatment liquid supply treatment for film formation or after the removal liquid supply treatment. You can do it. In addition, it is not necessary to perform the chemical liquid treatment necessarily.

In addition, when the chemical liquid treatment is performed after the removal liquid supply treatment, the liquid supply unit 40_1 provided in the first liquid treatment unit 14 may be provided in the second liquid treatment unit 19, and treatment for cleaning the chemical liquid You may install the unit separately.

Further, the configuration of the substrate processing system 1 is not limited to the configuration illustrated in the above-described embodiment.

For example, with respect to another film forming unit that performs a film forming process on the wafer W that has finished processing up to step S107 in Fig. 8, the liquid supply unit 80 provided in the second liquid processing unit 19 You can also install the configuration. That is, the top coat film may be removed by the other film forming unit. Alternatively, a film forming unit may be provided in the processing station 8 of the second processing apparatus 3, or a film forming process may be performed in the second liquid processing unit 19. Thereby, since the film forming process can be performed immediately after removal of the top coat film, Q-time management can be further facilitated.

New effects or modifications can be easily derived by those skilled in the art. For this reason, the broader aspects of the present invention are not limited to the specific details and representative examples shown and described above. Accordingly, various changes can be made without departing from the spirit or scope of the concept of the general invention defined by the appended claims and their equivalents.

W: wafer
P: reaction product
1: substrate processing system
2: first processing device
3: second processing device]
4: control device
12: dry etching unit
13: load lock chamber
14: first liquid treatment unit
19: second liquid treatment unit
40_1, 40_2, 80: liquid supply part
101: wiring layer
102: Cu wiring
103: liner film
104: interlayer insulating film
106: Via hole

Claims (21)

A treatment liquid supplying step of supplying a treatment liquid containing a volatile component and for forming a film on the substrate to a substrate subjected to pretreatment requiring atmosphere management or time management after treatment,
A receiving step of accommodating a substrate in which the processing liquid is solidified or cured by volatilization of the volatile component in a transport container,
And a second surface treatment step of cleaning the other surface of the substrate using a cleaning body or gas cluster while the entire main surface of the substrate is covered with the solidified or cured treatment liquid. . The method of claim 1,
The pretreatment is,
A substrate processing method characterized in that it is a treatment in which a portion that is deteriorated by exposure to the atmosphere is formed on the surface of the substrate. The method of claim 1,
A takeout step of taking out the substrate after the processing liquid supply step accommodated in the transfer container,
And a removal step of removing the solidified or cured treatment liquid from the substrate after the taking out step. The method of claim 3,
And a post-treatment step of performing a predetermined post-treatment on the substrate after the removal step. The method of claim 4,
The pretreatment is,
Dry etching or ashing is performed on the substrate before the processing liquid supply step,
The post-processing,
A substrate processing method characterized in that it is a process of performing wet cleaning on the substrate after the removal step. The method of claim 4,
The pretreatment is,
Dry etching or ashing is performed on the substrate before the processing liquid supply step,
The post-processing,
A substrate processing method characterized in that it is a process of performing dry etching on the substrate after the removal step. The method of claim 4,
The pretreatment is,
It is a treatment of forming a metal film on the substrate before the treatment liquid supply step,
The post-processing,
A substrate processing method characterized in that it is a process of forming a metal film on the substrate after the removal process. The method of claim 4,
The pretreatment is,
It is a process of performing wet cleaning on the substrate before the processing liquid supply process,
The post-processing,
A substrate processing method characterized in that it is a process of forming a metal film on the substrate after the removal process. The method of claim 4,
The pretreatment is,
It is a process of performing wet cleaning on the substrate before the processing liquid supply process,
The treatment liquid,
It is a solution of sublimable substances,
The removal process,
Sublimation of the solidified or cured treatment liquid to remove from the substrate. delete The method according to any one of claims 1 to 9,
A substrate processing method comprising a pretreatment step of performing the pretreatment on the substrate. The method of claim 3,
In the removal step, the solidified or cured treatment liquid is removed from the substrate by supplying a removal liquid. The method of claim 12,
The substrate processing method, wherein the removal liquid contains an anticorrosive agent for metal wiring formed on the substrate. A mounting unit for placing a transfer container capable of accommodating a plurality of substrates,
A processing liquid supplying unit that contains a volatile component and supplies a processing liquid for forming a film on the substrate to a substrate subjected to pretreatment requiring atmosphere management or time management after processing;
A substrate conveyance device for conveying the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component to the placement unit, and accommodated in the transfer container placed on the placement unit;
And a second surface treatment unit for cleaning the other surface of the substrate using a cleaning body or a gas cluster while the entire main surface of the substrate is covered with the solidified or cured processing liquid. The method of claim 14,
A substrate processing apparatus comprising a pretreatment unit that performs the pretreatment on the substrate. delete The method of claim 15,
A first block including the preprocessor,
A second block including the processing liquid supply unit,
A substrate processing apparatus comprising: a connection portion connecting the first block and the second block with an inner space shielded from the atmosphere. A mounting unit for placing a transfer container capable of accommodating a plurality of substrates,
The treatment liquid containing a volatile component and for forming a film on the substrate is supplied, and the treatment liquid is solidified or cured by the volatilization of the volatile component, thereby solidifying or curing from a substrate subjected to atmosphere management or time management A removal unit to remove the liquid,
A post-treatment unit for performing a predetermined post-treatment on the substrate from which the solidified or cured treatment liquid has been removed by the removal unit,
A substrate transfer device for conveying the substrate post-processed by the post-processing unit to the placing unit, and accommodating it in the transfer container placed on the placing unit,
And a second surface treatment unit for cleaning the other surface of the substrate using a cleaning body or a gas cluster while the entire main surface of the substrate is covered with the solidified or cured processing liquid. delete The method of claim 18,
A first block including the placement unit, the substrate transfer device, and the post-processing unit,
A second block including the removal unit,
A substrate processing apparatus comprising: a connection portion connecting the first block and the second block with an inner space shielded from the atmosphere. A computer-readable storage medium storing a program that operates on a computer and controls a substrate processing apparatus,
A storage medium characterized in that, when the program is executed, the computer controls the substrate processing apparatus so that the substrate processing method according to any one of claims 1 to 9 is performed.

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