TWI705519B - Substrate processing device, substrate processing method, photomask cleaning method, and photomask manufacturing method - Google Patents
Substrate processing device, substrate processing method, photomask cleaning method, and photomask manufacturing method Download PDFInfo
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- B08B1/143—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
Description
本發明係關於一種基板處理,尤其係關於一種有利地使用於光罩基板之洗淨處理之基板處理裝置、基板處理方法、光罩洗淨方法及光罩製造方法。The present invention relates to a substrate processing, in particular to a substrate processing apparatus, a substrate processing method, a photomask cleaning method, and a photomask manufacturing method that are advantageously used in the cleaning process of a photomask substrate.
於LSI(Large Scale Integration,大規模積體電路)用光罩或FPD(Flat panel display,平板顯示器)用光罩中,因製造步驟中或操作所產生之異物附著於光罩之轉印用圖案之區域等而造成轉印不良。因此,於光罩之製造過程或製造後必須實施精密之洗淨。In LSI (Large Scale Integration, large scale integrated circuit) masks or FPD (Flat panel display, flat panel display) masks, the foreign matter generated during the manufacturing process or operation adheres to the transfer pattern of the mask The area, etc., causes poor transfer. Therefore, precise cleaning must be performed during or after the manufacturing process of the photomask.
於專利文獻1中記載有使用於不同之複數種尺寸之光罩之旋轉洗淨裝置。該旋轉洗淨裝置具有讀取所投入之光罩基板之尺寸資訊之器件、及基於所讀取之基板尺寸資訊進行特定之控制之控制部。又,該旋轉洗淨裝置成為如下構成,即,於第一洗淨槽與第二洗淨槽之間具備基板翻轉器件,基於上述基板尺寸資訊控制基板翻轉器件之夾持臂用驅動部而夾持光罩基板,藉此翻轉光罩基板。
於專利文獻2中記載有對光罩用玻璃基板等基板之正面與背面分別供給不同之處理液而對基板進行處理之基板處理裝置。該基板處理裝置係一面使基板之主面成為水平而搬送基板,一面對基板之正面供給第1處理液並對基板之背面供給第2處理液,藉此對基板之正面與背面進行處理。該基板處理裝置形成為可防止背面用之洗淨液滲入至基板之正面並且可適當地對基板之背面進行處理的基板處理裝置。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利第4824425號公報 [專利文獻2]日本專利特開2014-69126號公報[Patent Document 1] Japanese Patent No. 4824425 [Patent Document 2] Japanese Patent Laid-Open No. 2014-69126
[發明所欲解決之問題][The problem to be solved by the invention]
作為使用液劑對基板之表面進行處理之方法,已知有旋轉洗淨。旋轉洗淨一面使保持水平之基板於處理護罩中旋轉,一面對基板之表面供給處理液而進行基板處理。根據該旋轉洗淨,可使刷或海綿等擦洗材與保持水平之基板之朝上面接觸而洗淨基板。As a method of treating the surface of a substrate with a liquid agent, spin cleaning is known. While rotating and cleaning, the horizontal substrate is rotated in the processing shield, and the surface of the substrate is supplied with processing liquid for substrate processing. According to this rotating cleaning, a scrubbing material such as a brush or a sponge can be brought into contact with the upward side of the horizontal substrate to clean the substrate.
另一方面,基板之朝下面保持於用於將基板水平地載置之保持構件(旋轉夾頭)。因此,對基板之朝下面應用利用擦洗材等之接觸式之洗淨時有些不便。因此,於分別以接觸式洗淨基板之正面與背面之情形時,在洗淨基板之朝上面後,必須進行基板之翻轉。但是,基板之翻轉伴有下述技術性問題。因此,於專利文獻1記載之旋轉洗淨裝置中,於未考慮伴隨著基板之翻轉會產生之問題之方面具有改善之餘地。On the other hand, the substrate is held downwardly by a holding member (rotating chuck) for placing the substrate horizontally. Therefore, it is somewhat inconvenient to apply contact cleaning using a scrubbing material or the like to the substrate facing down. Therefore, when the front and back surfaces of the substrate are cleaned by contact, the substrate must be turned over after cleaning the top surface of the substrate. However, the inversion of the substrate has the following technical problems. Therefore, in the rotary cleaning device described in
專利文獻2記載之基板處理裝置係一面藉由搬送輥搬送基板,一面對基板之背面(朝下面)供給處理液。於該基板處理裝置中,不翻轉基板而對背面進行處理。但是,背面之處理係一面藉由搬送輥搬送基板一面進行。因此,於使用該基板處理裝置洗淨基板之背面之情形時,因基板與搬送輥之接觸而導致污染物殘留於基板之背面。In the substrate processing apparatus described in
目前,於例如FPD用光罩基板中,就成本效率之觀點而言,為了將基板之主面之面積最大限度利用為轉印區域,有將裝置圖案配置至基板之外緣附近為止之需求。伴隨於此,於基板之外緣附近,亦不容許存在缺陷或異物,容許該等之範圍變得非常小。於專利文獻2記載之基板處理裝置中,搬送輥與基板之背面接觸,而污染物會殘留於該接觸部分,因此,於無法對將裝置圖案配置至基板之外緣附近為止之光罩應用此種處理裝置的方面還遺留有問題。At present, in, for example, FPD mask substrates, from the viewpoint of cost efficiency, in order to maximize the area of the main surface of the substrate as a transfer area, there is a need to arrange device patterns close to the outer edge of the substrate. Along with this, defects or foreign objects are not allowed near the outer edge of the substrate, and the allowable range becomes very small. In the substrate processing apparatus described in
本發明之主要目的在於提供一種藉由改善基板之朝下面之洗淨方法而可獲得因異物等之附著引起之污染得以減少之基板的技術。 [解決問題之技術手段]The main purpose of the present invention is to provide a technique for obtaining a substrate with reduced contamination due to adhesion of foreign matter and the like by improving the downward-facing cleaning method of the substrate. [Technical means to solve the problem]
(第1態樣) 本發明之第1態樣係一種基板處理裝置,其係藉由處理液處理基板之朝下面者,且具有: 支承構件,其於將上述基板之主面設為水平之狀態下,自朝下面側支承上述基板; 夾緊構件,其自對向之2個方向夾住被支承於上述支承構件之上述基板之外緣部之一部分而保持上述基板; 驅動器件,其為了使保持於上述夾緊構件之基板自上述支承構件分離,而使上述支承構件與上述夾緊構件之至少一者朝鉛直方向移動; 擦洗移動器件,其於藉由上述分離而形成之空間內,一面使擦洗材接觸於上述基板之朝下面,一面使上述擦洗材沿上述基板之朝下面移動;及 處理液供給器件,其對上述基板之朝下面供給處理液。 (第2態樣) 本發明之第2態樣如上述第1態樣之基板處理裝置,其中於上述夾緊構件之前端,設置有可接觸於形成於上述基板之主面與端面之間之轉角面的接觸面。 (第3態樣) 本發明之第3態樣如上述第1或第2態樣之基板處理裝置,其具有使被支承於上述支承構件之上述基板於水平面內旋轉之旋轉器件。 (第4態樣) 本發明之第4態樣係一種基板處理方法,其係藉由處理液處理基板之朝下面者,且具有以下步驟: 於將上述基板之四邊形之主面設為水平之狀態下,藉由以支承構件自朝下面側支承上述基板,而設置上述基板; 保持步驟,其將位於上述基板之主面之相對向之兩邊之基板外緣部之一部分分別夾緊保持; 分離步驟,其藉由使上述被夾緊保持之上述基板與上述支承構件之至少一者朝鉛直方向移動,而使上述基板之朝下面與上述支承構件分離;及 處理步驟,其對上述朝下面供給上述處理液,並且於藉由上述分離而形成之空間內,一面使擦洗材接觸於上述基板之朝下面,一面使上述擦洗材沿上述基板之朝下面移動,藉此利用處理液處理上述基板之朝下面。 (第5態樣) 本發明之第5態樣係一種基板處理方法,其係藉由處理液處理基板之朝下面者,且具有以下步驟: 於將上述基板之四邊形之主面設為水平之狀態下,藉由以支承構件自朝下面側支承上述基板,而設置上述基板; 第1保持步驟,其將位於上述基板之主面之相對向之兩邊之基板外緣部之一部分分別夾緊保持; 分離步驟,其藉由使上述夾緊保持之上述基板與上述支承構件之至少一者朝鉛直方向移動,而使上述基板之朝下面與上述支承構件分離; 第1處理步驟,其對上述朝下面供給上述處理液,並且於藉由上述分離而形成之空間內,一面使擦洗材接觸於上述基板之朝下面,一面使上述擦洗材沿上述基板之朝下面移動,藉此利用處理液處理上述基板之朝下面; 第2保持步驟,其將位於上述兩邊之基板外緣部自夾緊保持解除,將位於與上述兩邊不同之兩邊的基板外緣部之一部分分別夾緊保持;及 第2處理步驟,其對上述朝下面供給上述處理液,並且於上述空間內,一面使擦洗材接觸於上述基板之朝下面,一面使上述擦洗材沿上述基板之朝下面移動,藉此利用處理液處理上述基板之朝下面。 (第6態樣) 本發明之第6態樣如上述第5態樣之基板處理方法,其中於上述第1處理步驟之後且上述第2保持步驟之前,具有使上述基板於水平面上旋轉特定角度之旋轉步驟。 (第7態樣) 本發明之第7態樣如上述第6態樣之基板處理方法,其中上述特定角度為90度。 (第8態樣) 如上述第6或第7態樣之基板處理方法,其中上述旋轉步驟係藉由上述支承構件支承上述基板而進行。 (第9態樣) 本發明之第9態樣如上述第4至第7態樣中任一態樣之基板處理方法,其中藉由上述基板處理方法洗淨光罩基板之背面。 (第10態樣) 本發明之第10態樣係一種光罩洗淨方法,其具有: 背面洗淨步驟,其藉由如上述第4至第7態樣中任一態樣之基板處理方法洗淨光罩基板之背面;及 膜面洗淨步驟,其於以上述光罩基板之膜面為上側之狀態下,洗淨上述光罩基板之膜面;且 於上述背面洗淨步驟與上述膜面洗淨步驟之間,不具有使上述光罩基板上下翻轉之步驟。 (第11態樣) 本發明之第11態樣係一種光罩製造方法,其包含如上述第4至第7態樣中任一態樣之基板處理方法。 (第12態樣) 本發明之第12態樣係一種光罩製造方法,其包含如上述第10態樣之光罩洗淨方法。 [發明之效果](First aspect) The first aspect of the present invention is a substrate processing apparatus that treats the downward side of the substrate with a processing liquid, and has: a supporting member that sets the main surface of the substrate to be horizontal In the state, the substrate is supported from the lower side; a clamping member that clamps a part of the outer edge of the substrate supported by the support member from two opposing directions to hold the substrate; the drive device is for Separating the substrate held by the clamping member from the supporting member, and moving at least one of the supporting member and the clamping member in the vertical direction; scrubbing the moving device in the space formed by the separation, The scrubbing material is brought into contact with the downward surface of the substrate while moving the scrubbing material along the downward surface of the substrate; and a processing liquid supply device for supplying processing liquid to the downward surface of the substrate. (Second aspect) A second aspect of the present invention is the substrate processing apparatus of the above-mentioned first aspect, wherein a front end of the clamping member is provided with a contact that can be formed between the main surface and the end surface of the substrate The contact surface of the corner surface. (Third Aspect) A third aspect of the present invention is the substrate processing apparatus of the first or second aspect described above, which has a rotating device that rotates the substrate supported by the support member in a horizontal plane. (Fourth aspect) The fourth aspect of the present invention is a substrate processing method that treats the downward side of the substrate with a processing liquid, and has the following steps: Set the main surface of the square of the substrate to be horizontal In the state, the substrate is installed by supporting the substrate from the lower side with a supporting member; the holding step includes clamping and holding a part of the outer edge of the substrate on the opposite sides of the main surface of the substrate; A step of moving at least one of the clamped and held substrate and the supporting member in a vertical direction to separate the downward direction of the substrate from the supporting member; and a processing step, which supplies the downward direction of the substrate The processing liquid, and in the space formed by the separation, the scrubbing material is brought into contact with the downward surface of the substrate, and the scrubbing material is moved along the downward surface of the substrate, thereby processing the substrate with the processing liquid Face down. (Fifth aspect) The fifth aspect of the present invention is a substrate processing method that treats the downward side of the substrate with a processing liquid, and has the following steps: Set the main surface of the square of the substrate to be horizontal In the state, the substrate is installed by supporting the substrate from the lower side with a supporting member; the first holding step is to clamp and hold a part of the outer edge of the substrate on the opposite sides of the main surface of the substrate. Separating step, by moving at least one of the substrate and the supporting member held by the clamp to the vertical direction, so that the downward direction of the substrate is separated from the supporting member; the first processing step, which faces the above Next, the processing liquid is supplied, and in the space formed by the separation, the scrubbing material is brought into contact with the downward surface of the substrate, and the scrubbing material is moved along the downward surface of the substrate, whereby the processing liquid is used to process the The substrate facing downward; the second holding step, which releases the self-clamping and holding of the outer edge of the substrate located on the two sides, and clamps and holds a part of the outer edge of the substrate on the two sides different from the two sides; and the second process In the step, the process liquid is supplied to the downward direction, and in the space, the scrubbing material is brought into contact with the downward surface of the substrate, and the scrubbing material is moved along the downward surface of the substrate, thereby using the processing liquid to treat the substrate. The substrate faces down. (Sixth aspect) A sixth aspect of the present invention is the substrate processing method of the fifth aspect, wherein after the first processing step and before the second holding step, the substrate is rotated at a specific angle on a horizontal plane The rotation steps. (Seventh aspect) A seventh aspect of the present invention is the substrate processing method of the sixth aspect, wherein the specific angle is 90 degrees. (Eighth aspect) The substrate processing method according to the sixth or seventh aspect, wherein the rotating step is performed by supporting the substrate by the supporting member. (Ninth aspect) A ninth aspect of the present invention is the substrate processing method of any one of the above-mentioned fourth to seventh aspects, wherein the back surface of the mask substrate is cleaned by the above-mentioned substrate processing method. (Tenth aspect) The tenth aspect of the present invention is a photomask cleaning method, which has: a back surface cleaning step by the substrate processing method of any one of the above-mentioned fourth to seventh aspects Cleaning the back surface of the mask substrate; and the film surface cleaning step, in which the film surface of the mask substrate is cleaned with the film surface of the mask substrate as the upper side; and the back surface cleaning step is the same as the above Between the film surface cleaning steps, there is no step of turning the above-mentioned mask substrate upside down. (Eleventh aspect) The eleventh aspect of the present invention is a photomask manufacturing method, which includes the substrate processing method of any one of the above-mentioned fourth to seventh aspects. (Twelfth aspect) The twelfth aspect of the present invention is a photomask manufacturing method, which includes the photomask cleaning method as described in the tenth aspect. [Effects of Invention]
根據本發明,藉由改善基板之朝下面之洗淨方法,可獲得因異物等之附著引起之污染得以減少之基板。According to the present invention, by improving the downward-facing cleaning method of the substrate, it is possible to obtain a substrate with reduced contamination due to adhesion of foreign matter and the like.
以下,參照圖式對本發明之實施形態進行說明。 於本發明之實施形態中,成為基板處理之對象之基板例如為光罩基板。光罩基板不僅包含用作光罩之透明基板(光罩用玻璃基板等),還包含於該透明基板之表面成膜特定膜而成之光罩基底或於光罩基底塗佈光阻劑而成之附抗蝕劑光罩基底或光罩製造過程之光罩中間體或已完成之光罩。於以下之實施形態之說明中,有時將上述光罩基板簡稱為基板。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment of the present invention, the substrate to be the target of substrate processing is, for example, a mask substrate. The mask substrate includes not only a transparent substrate used as a mask (glass substrate for a mask, etc.), but also a mask base formed by forming a specific film on the surface of the transparent substrate, or a photoresist coated on the mask base. The finished photomask substrate with resist or the photomask intermediate of the photomask manufacturing process or the completed photomask. In the description of the following embodiments, the above-mentioned mask substrate may be simply referred to as a substrate.
於本發明之實施形態中,於光罩基板具有之正面及背面2個主面之中,將其中一主面設為膜面,將另一主面設為背面。所謂膜面係指進行成膜及轉印用圖案之形成之側之面。多數情形時,背面成為光罩基板之材料即玻璃之表面露出之面。因此,於本發明之實施形態中,將光罩基板之背面亦稱為玻璃面。In the embodiment of the present invention, among the two main surfaces of the front surface and the back surface of the mask substrate, one main surface is set as the film surface, and the other main surface is set as the back surface. The so-called film surface refers to the surface on the side where film formation and transfer pattern formation are performed. In most cases, the back surface becomes the exposed surface of the glass, which is the material of the mask substrate. Therefore, in the embodiment of the present invention, the back surface of the photomask substrate is also referred to as a glass surface.
又,於本發明之實施形態中,於基板處理之過程中使基板之主面成為水平時,將2個主面中之朝向鉛直方向上側之面設為朝上面,將朝向鉛直方向下側之面設為朝下面。In the embodiment of the present invention, when the main surface of the substrate is made horizontal during the substrate processing, the surface facing the upper side in the vertical direction of the two main surfaces is set to face upward, and the surface facing the lower side in the vertical direction The face is set to face down.
<旋轉洗淨裝置> 圖1係表示作為參考例之旋轉洗淨裝置之構成例之側視概略圖。 圖示之旋轉洗淨裝置50具備:保持器51,其保持俯視四邊形之光罩基板1;護罩52,其可收容保持器51;旋轉軸53,其用於使保持器51旋轉;驅動部54,其驅動旋轉軸53;接觸洗淨用之擦洗材55;上側處理液供給管線56;及下側處理液供給管線57。於保持器51,設置有自下方承接支承光罩基板1之銷58、及於光罩基板1之四角附近限制端面之夾頭59。驅動部54例如包括馬達等驅動源、及將驅動源之驅動力傳達至旋轉軸53之驅動力傳達機構(帶輪、皮帶等)。擦洗材55例如使用刷或海綿等構成。<Rotary washing device> Fig. 1 is a schematic side view showing a configuration example of a rotating washing device as a reference example. The
於包含上述構成之旋轉洗淨裝置50中,於保持器51上載置光罩基板1,一面使保持器51與光罩基板1以旋轉軸53為中心高速旋轉,一面通過上側處理液供給管線56對光罩基板1之朝上面供給處理液(包含洗淨液、淋洗液)。藉此,可藉由處理液對光罩基板1之朝上面進行處理。此時,可視需要自基板之下側通過下側處理液供給管線57噴出處理液(包含洗淨液、淋洗液),藉此利用處理液對光罩基板1之朝下面進行處理。In the
於上述圖1所示之例中,光罩基板1之朝上面成為膜面,於該膜面形成有轉印用圖案1a。於製造光罩後,洗淨光罩之情形時,必須儘量排除存在於光罩基板1之膜面側之異物。因此,於旋轉洗淨裝置50,可安裝使用擦洗材55之接觸洗淨機構。接觸洗淨機構係如下機構,即,藉由保持擦洗材55之臂(未圖示)之動作,以與光罩基板1之朝上面(膜面)對向之方式配置擦洗材55,並且使擦洗材55接觸於光罩基板1之朝上面而進行洗淨。In the example shown in FIG. 1, the upper face of the
但是,光罩基板1藉由載置於保持器51而支承其自重。因此,於光罩基板1之朝下面側並無太大空間。因此,雖可使自下側處理液供給管線57噴出之處理液通過保持器51之間隙到達光罩基板1之朝下面進行處理,但對朝下面應用使用擦洗材等之接觸洗淨極其困難。其理由在於,若欲藉由擦洗材等接觸洗淨光罩基板1之朝下面以更積極地去除異物,則會產生保持擦洗材之臂等與保持器51發生干涉等不良情況。However, the
因此,作為接觸洗淨光罩基板1之膜面及背面該兩者之方法,於處理膜面之前,如圖2(a)所示,使膜面向下地將光罩基板1載置於保持器51,此時藉由上述擦洗材55洗淨成為朝上面之背面。其後,如圖2(b)所示,使光罩基板1上下翻轉並載置於保持器51,此時藉由上述擦洗材55洗淨成為朝上面之膜面。再者,於分別接觸洗淨光罩基板1之正面及背面之情形時,亦可先洗淨膜面之後再洗淨背面,但最終應儘可能地去除膜面側之異物,故而有利的是膜面之處理最後進行。Therefore, as a method of contacting and cleaning both the film surface and the back surface of the
但是,本發明者發現,即便於最後進行膜面之處理之情形時,於此前洗淨成為朝上面之背面時,藉由洗淨而自背面被清除之異物或存在於光罩基板1之端面之異物亦會與處理液一同滲入膜面側(圖3)。即,於上述洗淨方法中,因光罩製造過程之操作等而附著於光罩基板1之背面之異物或附著於光罩基板1之端面之異物,於以背面作為朝上面洗淨時,會如圖3之虛線箭頭所示滲入膜面側。尤其,於光罩基板1之端面之粗糙度與主面相比較粗之情形時,由於在端面潛藏有較多異物,故異物滲入至膜面側之傾向變得顯著。However, the present inventors found that even in the case of the last treatment of the film surface, the foreign matter removed from the back surface by washing may exist on the end surface of the
再者,於用以去除尺寸未達50 μm(例如0.5~50 μm左右)之異物之洗淨中,要使洗淨環境充分潔淨。若防止洗淨裝置之污染或擦洗材之污染、於洗淨裝置內飛散之處理液之滴落或再附著之措施不充分,則亦有可能藉由1次洗淨非但不會降低異物之數量,反而會增加異物之數量。另一方面,藉由良好地整頓洗淨環境,能夠以特定之比率減少異物之數量。但是,即便以1次洗淨例如能夠去除70%左右之異物,要100%去除於現實中仍幾乎不可能實現。因此,重要的是,於基板之洗淨步驟中,事先於對膜面洗淨前之初期階段儘量減少異物之數量。如上所述,於首先洗淨光罩基板1之背面,其後洗淨光罩基板1之膜面之情形時,於最初進行之背面之洗中時,會因異物滲入至膜面側而導致附著於膜面之異物之數量增加。如此一來,於之後之步驟進行之膜面之洗淨中,未完全去除而殘存之異物之數量有增加之傾向。即,本發明者發現,理想的是,於洗淨步驟中不存在會於光罩基板1之任一面使異物之數量增加之製程,尤其有利的是採用要形成微細圖案(或已形成圖案)之膜面側之異物之數量連暫時性的增加都不會之步驟。In addition, in the cleaning for removing foreign matter whose size is less than 50 μm (for example, about 0.5-50 μm), the cleaning environment should be sufficiently clean. If the measures to prevent the contamination of the cleaning device or the scrubbing material, the dripping or re-adhesion of the treatment liquid scattered in the cleaning device are insufficient, it is possible that the amount of foreign matter will not be reduced by one cleaning , It will increase the number of foreign objects. On the other hand, by rectifying the cleaning environment well, the amount of foreign matter can be reduced at a specific rate. However, even if about 70% of foreign matter can be removed with one wash, it is almost impossible to achieve 100% removal in reality. Therefore, it is important to minimize the amount of foreign matter in the initial stage before cleaning the film surface in the substrate cleaning step. As described above, in the case where the back surface of the
以下,對基於本發明者之見解之本發明之具體實施形態進行說明。Hereinafter, specific embodiments of the present invention based on the findings of the inventors will be described.
<基板處理裝置> 圖4係表示本發明之實施形態之基板處理裝置之構成例之概略側視圖。 圖示之基板處理裝置10例如可作為將光罩基板設為被處理基板之基板洗淨裝置加以應用。於該情形時,基板處理裝置10可用於在與光罩製造相關之各步驟(成膜、顯影、蝕刻、檢查、缺陷修正等)之前或之後,視需要洗淨光罩基板。尤其,本發明之實施形態之光罩基板1於一系列之光罩製造中,於蝕刻步驟之後及缺陷修正步驟之後等,洗淨形成有圖案之狀態之光罩基板時,發揮顯著之效果。<Substrate Processing Apparatus> Fig. 4 is a schematic side view showing a configuration example of the substrate processing apparatus according to the embodiment of the present invention. The illustrated
圖示之基板處理裝置10具備:作為支承構件之保持器11,其支承基板;夾緊構件12,其保持基板之外緣部;驅動器件13,其以相對於由夾緊構件12保持之基板接近、離開之方式驅動保持器11;擦洗移動器件15,其使擦洗材14移動;上表面側處理液供給器件16,其向基板之朝上面供給處理液;下表面側處理液供給器件17,其向基板之朝下面供給處理液;及控制部18,其控制驅動器件13及擦洗移動器件15。以下,將基板設為光罩基板1進行說明。光罩基板1具有之2個主面之中,其中一主面2成為形成有轉印用圖案1a之膜面,另一主面3成為包含玻璃面之背面。The
保持器11係如圖5(a)之側視圖所示,於使光罩基板1之主面2、3成為水平之狀態下,自朝下面側支承光罩基板1的構件。再者,所謂水平係指實質上水平之情形,例如,包含光罩基板1因自重引起之彎曲之影響而變形之情形等。於將光罩基板1設置於基板處理裝置10之情形時,首先將光罩基板1載置於保持器11。保持器11除了用作基板處理裝置10之專用治具以外,亦可用作將光罩基板1自其他步驟搬送至基板處理裝置10時之搬送治具,或者亦可於其他步驟中兼用作支承光罩基板1之構件。因此,保持器11較佳為可相對於基板處理裝置10進行裝卸。The
於保持器11之上表面,設置有分別呈柱狀之複數個銷21。該等銷21於將光罩基板1載置於保持器11時,藉由接觸於光罩基板1之朝下面,而自朝下面側支承光罩基板1。各銷21較佳為位於距離光罩基板1之主面之外緣10 mm之範圍內。又,光罩基板1之主面(朝下面)與各銷21之接觸面積較小,例如總計為100 mm2
以下。為了減小上述接觸面積,與該主面接觸之銷21之前端(上端)亦可形成為凸曲面形狀、較佳為半球面狀。又,各銷21較佳為如圖5(b)之俯視圖所示,以分別位於呈俯視四邊形之光罩基板1之主面之4個角部附近之方式設定。On the upper surface of the
夾緊構件12係自對向之2個方向夾住支承於保持器11之基板之外緣部之一部分而保持該基板之構件。該一對夾緊構件12之中心軸位於一直線上。夾緊構件12較佳為分別保持光罩基板1之主面中之相對向之兩邊之一部分。具體而言,可設為夾住並保持光罩基板1之主面之外緣部之夾緊構件12。此處,光罩基板1如圖6所示,具有2個主面(2、3)與4個端面4,且於主面2與4個端面4之間及主面3與4個端面4之間分別具有轉角面5。夾緊構件12較佳為具有接觸於光罩基板1之轉角面5之接觸面。藉此,夾緊構件12能夠以不與至少任一側之基板主面面接觸而相對於主面僅線接觸之狀態保持光罩基板1。於夾緊構件12之前端,如圖6所示,藉由形成剖面大致梯形之切口,而設置有相對於夾緊保持之光罩基板1之主面具有傾斜角之2個接觸面22。夾緊構件12之前端之2個接觸面22之開口角度θ(deg)較佳為以接觸面22可接觸於形成於光罩基板1之各主面2、3與端面4之間之轉角面5之方式設定。例如,可設為70≦θ≦100。The clamping
此處,如圖7所示,光罩基板1形成為俯視長方形,且光罩基板1之長邊之長度為W1、短邊之長度為W2之情形時,夾緊構件12保持光罩基板1之接觸長度L(mm)例如可設定為如下。即,於以一對夾緊構件12保持光罩基板1之情形時,於保持之邊之長度方向上夾緊構件12接觸於光罩基板1之接觸長度L(mm)較佳為考慮應用於本裝置之最小尺寸之光罩基板1而設定為50≦L≦500。於該情形時,較佳為分別藉由1個夾緊構件12保持相對向之各邊之長度方向之中間部或其附近。於該情形時,可藉由一對夾緊構件12保持一邊(長邊、短邊)為500~1500 mm左右之各種尺寸之光罩基板1。Here, as shown in FIG. 7, when the
再者,於圖7中,表示以一對夾緊構件12保持光罩基板1之相對向之2個長邊之情形,但上述接觸長度L(mm)之設定亦可同樣地應用於以一對夾緊構件12保持光罩基板1之相對向之2個短邊之情形。又,如圖8所示,使用複數對夾緊構件,以複數個(於圖8之例中為2個)夾緊構件12保持光罩基板1之一邊之情形時,較佳為將各夾緊構件12之接觸長度L1、L2分別設定為50~200 mm,並且將相鄰之夾緊構件12彼此之間隔距離B1設定為500 mm以下。Furthermore, in FIG. 7, a pair of clamping
又,亦可如圖9所示設為如下構成,即,以一對夾緊構件12a保持光罩基板1之相對向之兩邊(於圖9之例中為長邊),另一方面,以另一對夾緊構件12b保持光罩基板1之相對向之另外兩邊(於圖9之例中為短邊)。於該構成中,可以兩對夾緊構件12a、12b同時保持光罩基板1之四邊,亦可以兩對夾緊構件12a、12b交替保持光罩基板1之相對向之兩邊(長邊或短邊)。 再者,於圖7等中,光罩基板1之圖案設計為表示光罩基板1之方向者,不一定指現實之轉印用圖案。Alternatively, as shown in FIG. 9, it may be configured as follows, namely, a pair of clamping
夾緊構件12如上述圖4所示,安裝於臂25之前端。臂25係如以下方式動作。首先,於需要藉由夾緊構件12保持光罩基板1時,以夾緊構件12接觸於保持器11所支承之光罩基板1之外緣部之方式,使臂25進行前進動作。又,於無須藉由夾緊構件12保持光罩基板1時,以夾緊構件12自光罩基板1之外緣部分離之方式,使臂25向保持器11之外側進行避讓動作。此種臂25之動作係由控制部18控制,藉由以成對之2個臂25之動作同步之方式執行控制,一對夾緊構件12亦同步地動作。The clamping
驅動器件13以使保持器11與夾緊構件12之至少一者向鉛直方向移動之方式驅動,以使由一對夾緊構件12保持之光罩基板1自保持器11分離。於使夾緊構件12向鉛直方向移動之情形時,於藉由上述之臂25之前進動作而利用夾緊構件12保持光罩基板1後,如圖10(a)所示,使一對夾緊構件12向鉛直方向之上側移動(以下,亦稱為「上升」)。又,於使保持器11向鉛直方向移動之情形時,如圖10(b)所示,於以一對夾緊構件12保持光罩基板1後,使保持器11向鉛直方向之下側移動(以下,亦稱為「下降」)。藉此,可於鉛直方向上使光罩基板1之朝下面與保持器11分離,從而擴大光罩基板1之朝下面側之空間。The driving
再者,於使光罩基板1之朝下面與保持器11分離之情形時,亦可使夾緊構件12上升且使保持器11下降。又,亦可使如上述圖10(a)般上升後之夾緊構件12下降至原先之位置,或使如上述圖10(b)般下降後之保持器11上升至原先之位置,藉此使光罩基板1與保持器11相對接近而封閉光罩基板1之朝下面側之空間。例如,於保持器11與夾緊構件12之間交接光罩基板1時,使彼此相對接近。Furthermore, when the downward facing of the
又,驅動器件13亦兼具作為使保持器11所支承之光罩基板1於水平面內旋轉之旋轉器件之功能。旋轉器件藉由使水平安裝有保持器11之旋轉軸19(圖4)旋轉,而使保持器11所支承之光罩基板1於水平面內旋轉。藉此,可改變水平面內之光罩基板1之配置姿勢(方向)。旋轉器件例如可使光罩基板1於水平面內以90度之角度旋轉。In addition, the driving
再者,於本實施形態中,驅動器件13設為兼具旋轉器件之功能之構成,但亦可分別獨立地構成驅動器件13與旋轉器件。又,於使基板處理裝置10同時具備旋轉洗淨裝置、或乾燥裝置之功能之情形時,上述旋轉器件可設為使保持器11高速旋轉者。Furthermore, in this embodiment, the driving
擦洗移動器件15藉由上述驅動器件13將用於接觸洗淨光罩基板1之朝下面之擦洗材14導入至形成於光罩基板1之朝下面側之空間。擦洗移動器件15於驅動器件13使光罩基板1自保持器11分離之情形時,使擦洗材14於藉由分離而形成於光罩基板1之朝下面側之空間內移動。又,擦洗移動器件15一面使擦洗材14接觸於光罩基板1之朝下面,一面使擦洗材14沿光罩基板1之朝下面移動。藉此,可藉由擦洗材14接觸洗淨光罩基板1之朝下面。The scrubbing moving
擦洗移動器件15可保持海綿或刷等擦洗材14。又,擦洗移動器件15於需要進行光罩基板1之朝下面之接觸洗淨時,將擦洗材14導入至上述空間,於不需要接觸洗淨時,使擦洗材14自上述空間退避。又,擦洗移動器件15藉由使擦洗材14接觸於光罩基板1之朝下面,一面維持該狀態一面使擦洗材14沿光罩基板1之朝下面移動,可遍及朝下面整體進行處理(洗淨)。因此,於將光罩基板1之朝下面設為XY面時,擦洗移動器件15如圖11所示,藉由在該XY面內使擦洗材14以特定之路線水平移動,而以覆蓋朝下面整體之方式進行處理。The scrubbing moving
擦洗材14較佳為圓盤刷或海綿等,較佳為圓盤形狀(圖12)。作為其他擦洗材,亦可使用滾筒刷,但若使用具有水平之旋轉軸之滾筒刷,則異物會與因滾筒刷之旋轉而濺起之處理液一起飛散,從而異物容易再附著於基板。因此,為了防止因異物再附著引起之基板之朝上面之污染,較佳為應用圓盤形狀之擦洗材14,且一面使其僅於上述XY面內移動一面處理(洗淨)基板。The scrubbing
上表面側處理液供給器件16(圖4)向由保持器11支承之光罩基板1之朝上面供給處理液。The upper surface side processing liquid supply device 16 (FIG. 4) supplies the processing liquid to the upper side of the
下表面側處理液供給器件17(圖4)向由夾緊構件12保持之光罩基板1之朝下面供給處理液。例如,於藉由擦洗移動器件15使擦洗材14沿光罩基板1之朝下面接觸移動時,向光罩基板1與擦洗材14之接觸面附近供給處理液(洗淨液或淋洗液)。 關於供給之處理液,為了使於光罩基板1之朝下面之滯留時間較長,較佳為使用黏性較高之凝膠狀者或含泡沫者。因此,連結有下表面側處理液供給器件17之處理液槽(未圖示)亦可為伴有用於產生泡沫之攪拌機或氣體(空氣、氮氣等)之供給器件者。The lower surface side processing liquid supply device 17 (FIG. 4) supplies the processing liquid to the lower surface of the
控制部18係根據預先設定之控制程式對控制對象進行控制。控制對象除了驅動器件13及擦洗移動器件15以外,還包含臂25。因此,驅動器件13、擦洗移動器件15及臂25之動作分別由控制部18控制。The
<基板處理裝置> 繼而,使用圖13及圖14對本發明之實施形態之基板處理方法進行說明。再者,於圖13(a)~(f)及圖14(a)~(f)中,左側表示側視圖,右側表示俯視圖。<Substrate Processing Apparatus> Next, the substrate processing method according to the embodiment of the present invention will be described using FIGS. 13 and 14. In addition, in FIGS. 13(a) to (f) and FIGS. 14(a) to (f), the left side shows a side view, and the right side shows a plan view.
本發明之實施形態之基板處理方法可使用上述構成之基板處理裝置10實施,亦可使用其他構成之基板處理裝置實施。此處,作為一例,說明使用上述構成之基板處理裝置10之基板處理方法。又,於本發明之實施形態之基板處理方法中,對如下情形進行說明,即,將形成有轉印用圖案之光罩基板1設為被處理基板,並且將形成有轉印用圖案之光罩基板1之膜面設為朝上面,將背面(玻璃面)設為朝下面,藉由處理液處理(洗淨等)朝下面。The substrate processing method of the embodiment of the present invention can be implemented using the
(第1實施形態之基板處理方法) 首先,如圖13(a)所示,將成為被處理基板之光罩基板1設置於基板處理裝置10(圖4)。具體而言,於使光罩基板1之主面2、3成為水平之狀態下,將光罩基板1載置於保持器11(設置步驟)。此時,設置於保持器11之複數個銷21藉由與光罩基板1之朝下面之外緣附近接觸,而自光罩基板1之朝下面側支承該基板之自重。(Substrate processing method of the first embodiment) First, as shown in FIG. 13(a), the
其次,如圖13(b)所示,使相互對向之一對臂25(圖4)自與光罩基板1大致相同之水平面上接近(前進移動),以利用一對夾緊構件12保持光罩基板1。此時,安裝於各臂25之前端之夾緊構件12夾緊保持位於光罩基板1之主面之相對向之兩邊(於圖例中為短邊)之基板外緣部之一部分。藉此,光罩基板1由一對夾緊構件12自兩側夾住而保持水平(保持步驟、第1保持步驟)。Next, as shown in FIG. 13(b), a pair of arms 25 (FIG. 4) facing each other approaches (moves forward) from a horizontal plane approximately the same as the
其次,如圖13(c)所示,藉由驅動器件13使保持器11下降,藉此使光罩基板1之朝下面與保持器11分離(分離步驟)。藉此,於光罩基板1之朝下面與保持器11之間形成特定高度之空間。該空間具有即便導入擦洗移動器件15亦不會發生干涉之程度之高度,較佳為具有40~80 cm左右之高度。再者,此處,雖使保持器11下降,但亦可使保持光罩基板1之夾緊構件12上升。又,亦可使保持器11下降且使夾緊構件12上升。Next, as shown in FIG. 13(c), the
其次,如圖13(d)所示,將擦洗移動器件15導入至光罩基板1之朝下面與保持器11之間之空間內,並且使安裝於擦洗移動器件15之擦洗材14於該空間內與光罩基板1之朝下面接觸。又,一面使擦洗材14接觸於光罩基板1之朝下面,一面使擦洗材14沿光罩基板1之朝下面移動。此時,藉由下表面側處理液供給器件17向光罩基板1之朝下面供給處理液,藉此利用處理液處理(於本形態中為洗淨處理)光罩基板1之朝下面(處理步驟、第1處理步驟)。Next, as shown in FIG. 13(d), the scrubbing moving
於本實施形態中,使用圓盤刷作為擦洗材14,並且一面使圓盤刷以特定之速度旋轉(自轉),一面使圓盤刷以於光罩基板1之朝下面整體描繪特定之軌跡之方式移動。作為擦洗材14之圓盤刷之移動,例如可為如上述圖12中虛線所示之往返運動。又,較佳為,於擦洗材14之中央形成沿縱向貫通之貫通孔,下表面側處理液供給器件17通過該貫通孔噴出處理液(洗淨液),若設為上述構成,則可直接將處理液供給至光罩基板1之朝下面與擦洗材14之接觸面。下表面側處理液供給器件17供給之處理液亦可加熱至例如30~60度左右。當利用處理液進行之處理結束時,使擦洗材14與擦洗移動器件15一起自光罩基板1之朝下面與保持器11之間之空間避讓。In this embodiment, a disc brush is used as the scrubbing
再者,於欲以夾緊構件12保持光罩基板1且藉由擦洗材14接觸洗淨光罩基板1之朝下面整體之情形時,於夾緊構件12所存在之基板外緣部之一部分,會因夾緊構件12與擦洗材14之干涉而產生無法使擦洗材14接觸之區域。具體而言,如上述圖6所示,存在夾緊構件12之前端部向光罩基板1之朝下面側突出尺寸d而配置之區域,該區域成為因夾緊構件12與擦洗材14之干涉而未被實施處理(洗淨)之未處理區域(未洗淨區域)。未洗淨區域之面積根據夾緊構件12之形狀與光罩基板1之厚度變化,例如尺寸d為2~50 mm左右。一般而言,與光罩基板1之基板尺寸(各邊之長度尺寸)之大小連動地基板之厚度不同,故作為顯示裝置製造用光罩,為了可處理尺寸各異之各種基板,該傾向無法避免。Furthermore, when it is desired to hold the
其次,如圖13(e)所示,藉由驅動器件13使為了擴大上述空間而下降後之保持器11上升,藉此將光罩基板1再次設置於保持器11上。Next, as shown in FIG. 13(e), the
其次,藉由使臂25向保持器11之外側避讓,而如圖13(f)所示,將位於光罩基板1之相對向之兩邊(於圖例中為短邊)之基板外緣部自夾緊構件12之夾緊保持解除。藉此,光罩基板1成為再次由具有複數個銷21之保持器11自朝下面側支承之狀態。於該階段,於光罩基板1之下側面存在上述未處理區域(未洗淨區域)1b。Next, by making the
其次,如圖14(a)所示,藉由驅動器件13使保持器11於水平面內旋轉90度(或270度)(旋轉步驟)。藉此,於水平面內調換光罩基板1之長邊與短邊之方向。Next, as shown in FIG. 14(a), the
其次,如圖14(b)所示,藉由使一對臂25再次接近(前進移動),而以夾緊構件12夾緊保持位於與上述圖13(b)中夾緊保持之兩邊不同之兩邊(於圖例中為長邊)之基板外緣部(第2保持步驟)。Next, as shown in FIG. 14(b), by making the pair of
其次,如圖14(c)所示,再次藉由驅動器件13使保持器11下降,使光罩基板1之朝下面與保持器11分離,藉此於光罩基板1之朝下面與保持器11之間形成特定高度之空間。Next, as shown in FIG. 14(c), the
其次,如圖14(d)所示,再次將擦洗移動器件15導入至光罩基板1之朝下面與保持器11之間,於該空間內一面使擦洗材14接觸於光罩基板1之朝下面,一面使擦洗材14沿光罩基板1之朝下面移動,藉此利用處理液(洗淨液)處理光罩基板1之朝下面整體(第2處理步驟)。此時,擦洗材14亦接觸於上述未處理區域(未洗淨區域)1b,故未處理區域1b消失。因此,包含未處理區域1b之朝下面整體之洗淨完成。Next, as shown in FIG. 14(d), the scrubbing moving
其次,如圖14(e)所示,藉由驅動器件13使為了擴大上述空間而下降後之保持器11上升,藉此再次將光罩基板1設置於保持器11上。Next, as shown in FIG. 14(e), the
其次,如圖14(f)所示,藉由使臂25向保持器11之外側避讓,而將位於光罩基板1之相對向之兩邊(於圖例中為長邊)之基板外緣部自夾緊構件12之夾緊保持解除。藉此,光罩基板1恢復為由設置於保持器11之複數個銷21自朝下面側支承之狀態。Next, as shown in FIG. 14(f), the outer edges of the substrate located on the opposite sides of the mask substrate 1 (the long side in the illustration) are removed from the outer edges of the substrate by making the
根據上述基板處理裝置10與使用其之基板處理方法,即便不使光罩基板1上下翻轉,亦可使用擦洗材14利用處理液處理由保持器11支承之光罩基板1之朝下面整體。藉此,於將光罩基板1之背面作為朝下面洗淨之情形時,可避免因背面洗淨而導致異物等滲入至膜面側,從而降低異物等之附著引起之污染。 又,根據該基板處理方法,藉由將光罩基板1之相對之長邊及短邊分別各夾緊保持1次,而可進行朝下面整面之處理。已解除夾緊保持之部分不會再次被夾緊保持。針對具有四邊形(正方形或長方形)之主面之光罩基板1,可以自相互正交之2個方向交替保持之最簡單之動作迅速地處理朝下面整面。According to the above-mentioned
(第2實施形態之基板處理方法) 本發明之第2實施形態之基板處理方法與上述第1實施形態相比,以下方面有所不同。 首先,於上述圖13(b)或圖14(b)之步驟中,藉由一對夾緊構件12保持光罩基板1。此時,若光罩基板1因自重而彎曲,則光罩基板1之重心位置之高度會變得較由夾緊構件12保持之基板外緣部之高度低。因此,若使擦洗材14於水平面上移動,則有擦洗材14對光罩基板1之朝下面之壓力變得不均勻之情形或無法適當地維持兩者之接觸狀態之情形。(Substrate processing method of the second embodiment) The substrate processing method of the second embodiment of the present invention is different from the above-mentioned first embodiment in the following points. First, in the step of FIG. 13(b) or FIG. 14(b), the
因此,於本發明之第2實施形態中,如圖15所示,於將水平面設為XY面時,擦洗移動器件15不僅可於XY平面內使擦洗材14移動,亦可使擦洗材14於包含Z方向之三維方向上移動。具體而言,較佳為設為如下構成,即,藉由控制部18(圖4)控制擦洗移動器件15,而可沿光罩基板1之朝下面形狀之凹凸接觸移動擦洗材14。於該情形時,例如,根據光罩基板1之形狀(縱橫尺寸、厚度)與素材之物性,預先推算光罩基板1因自重彎曲時之彎曲形狀,配合推算出之朝下面之形狀,三維地控制擦洗材14之移動。藉此,即便於光罩基板1因自重而彎曲之情形時,亦可以追隨該彎曲形狀之方式,使擦洗材14沿光罩基板1之朝下面移動。因此,能夠以均勻之壓力使擦洗材14接觸於光罩基板1之朝下面整體。Therefore, in the second embodiment of the present invention, as shown in FIG. 15, when the horizontal plane is set to the XY plane, the scrubbing moving
(第3實施形態之基板處理方法) 於上述第1實施形態之基板處理方法中,採用水平地維持由夾緊構件12夾緊保持之光罩基板1並使擦洗材14與該基板之朝下面接觸之構成。另一方面,於本第3實施形態中,如圖16所示,採用使由夾緊構件12夾緊保持之光罩基板1以水平面為基準傾斜特定角度而保持之構成。具體而言,於上述圖13(b)或圖14(b)之步驟中,使由夾緊構件12夾緊保持之光罩基板1傾斜特定角度(2度~20度左右),於該狀態下自朝下面之上游側(高位側)藉由下表面側處理液供給器件17(圖4)供給處理液(洗淨液)30。藉此,如圖16之虛線之箭頭所示,處理液30自光罩基板1之朝下面之上游側向下游側(低位側)流動。即,可於光罩基板1之朝下面將處理液30之流動方向控制為固定方向。因此,可抑制處理液30之停滯或不規則之滴落。又,於本第3實施形態中,藉由將擦洗移動器件15設為可於三維方向上移動擦洗材14之構成,亦可配合光罩基板1之傾斜,三維地控制擦洗材14之移動。因此,能夠以均勻之壓力使擦洗材14接觸於光罩基板1之朝下面整體。(Substrate processing method of the third embodiment) In the substrate processing method of the first embodiment described above, the
(其他實施形態) 於上述實施形態中,對使用一對夾緊構件12保持光罩基板1之情形進行了說明,但於例如如上述圖9所示般使用兩對夾緊構件12(12a、12b)保持光罩基板1之情形時,可省略上述圖13(e)、(f)及圖14(a)之步驟(旋轉步驟)。具體而言,當結束上述圖13(d)之步驟時,除了至目前為止保持光罩基板1之相對向之兩邊(短邊)之一對夾緊構件12a以外,亦以另一對夾緊構件12b保持與該兩邊不同之兩邊。其次,將一對夾緊構件12a之夾緊保持解除之後,使用擦洗材14利用處理液處理(洗淨)光罩基板1之朝下面。其次,藉由保持器11之上升,將光罩基板1再次設置於保持器11後,將一對夾緊構件12b之夾緊保持解除。藉此,與上述第1實施形態相比步驟簡化。因此,可效率良好地進行光罩基板1之處理。(Other Embodiments) In the above embodiment, the case where a pair of clamping
於上述實施形態中,對處理光罩基板1之朝下面之情形進行了說明,但與此同時,亦可對光罩基板1之朝上面進行使用擦洗移動器件或擦洗材之處理。即,本發明之實施形態之基板處理裝置包含如下態樣,即,附加地具有用於處理光罩基板1之朝上面之擦洗移動器件或擦洗材,進而具有向朝上面供給處理液之處理液供給器件,且藉由上述控制部控制其動作。In the above-mentioned embodiment, the case where the
又,亦可於利用本發明之實施形態之基板處理方法藉由擦洗材14與洗淨液將光罩基板1之背面作為朝下面洗淨後,使用周知之旋轉洗淨裝置洗淨光罩基板1之膜面。於該過程中,可無須進行光罩基板1之上下翻轉。於該情形時,實現如下之光罩洗淨方法,其具有以光罩基板1之背面作為朝下面洗淨該背面之背面洗淨步驟、及於以光罩基板1之膜面為上側之狀態下洗淨光罩基板1之膜面之膜面洗淨步驟,且於上述背面洗淨步驟與上述膜面洗淨步驟之間不具有使光罩基板1上下翻轉之步驟。於該光罩洗淨方法中,由於光罩基板1之背面洗淨使膜面朝向上側而進行,故可降低背面洗淨時異物滲入至膜面側之風險。In addition, after using the substrate processing method of the embodiment of the present invention to clean the back surface of the
於上述實施形態中,作為於基板處理裝置10或基板處理方法中成為處理對象之被處理基板,列舉光罩基板1為例進行了說明,但成為處理對象之基板之種類或用途並無特別限制。又,於洗淨光罩基板1之情形時,該光罩之規格或用途亦無特別限制。例如,本發明之實施形態之基板處理裝置10或基板處理方法可較佳地應用於處理顯示裝置(液晶面板、有機電致發光面板等)製造用光罩基板之情形。又,作為顯示裝置製造用光罩基板,例如,可應用具有一邊為300~2000 mm左右之四邊形之主面且厚度為5~20 mm左右之光罩基板。尤其,若應用於具有圖案CD(Critical Dimension,臨界尺寸)微細(例如,CD=3 μm以下、或1~3 μm左右)之孔圖案、L/S(線/間隙)圖案之顯示裝置用光罩基板,則效果顯著。該等光罩基板可藉由FPD用曝光裝置(具有包含i線、h線、g線之任一者或全部之光源,光學系統之NA(數值孔徑)為0.08~0.15左右之投影曝光裝置或具有同樣之光源之接近式曝光裝置等),將其轉印用圖案轉印至被轉印體上。In the above-mentioned embodiment, as the substrate to be processed in the
本發明可以包含上述實施形態之基板處理方法之光罩製造方法之形式實現,亦可以包含具有上述背面洗淨步驟及膜面洗淨步驟之光罩洗淨方法之光罩製造方法之形式實現。The present invention can be realized in the form of a mask manufacturing method including the substrate processing method of the above-mentioned embodiment, and can also be realized in the form of a mask manufacturing method including the mask cleaning method having the above-mentioned back surface cleaning step and film surface cleaning step.
光罩製造方法例如具有以下步驟。 準備附抗蝕劑光罩基底之步驟,上述附抗蝕劑光罩基底係於光罩之主面,形成至少1層光學膜(例如遮光膜),進而塗佈形成光阻膜而成。 使用利用雷射或電子束之繪圖裝置,將基於欲獲得之裝置之設計之圖案資料繪圖至光罩基底的步驟。 將完成繪圖之光阻膜顯影,形成抗蝕圖案的步驟。 將所形成之抗蝕圖案作為蝕刻遮罩,以乾式蝕刻或濕式蝕刻對上述光學膜進行蝕刻,形成轉印用圖案的步驟。 對所形成之轉印用圖案進行檢查,並視需要進行圖案之缺陷修正的步驟。 於該等步驟之任一階段,均可應用本發明之實施形態之基板處理方法或光罩洗淨方法。The photomask manufacturing method has the following steps, for example. The step of preparing a photomask substrate with resist. The photomask substrate with resist is formed by forming at least one optical film (such as a light-shielding film) on the main surface of the photomask, and then coating and forming a photoresist film. The step of drawing pattern data based on the design of the device to be obtained on the mask substrate using a drawing device using laser or electron beam. The step of developing the photoresist film after drawing to form a resist pattern. Using the formed resist pattern as an etching mask, the above-mentioned optical film is etched by dry etching or wet etching to form a pattern for transfer. Check the formed transfer pattern, and perform the steps of correcting the defects of the pattern as necessary. At any stage of these steps, the substrate processing method or the photomask cleaning method of the embodiment of the present invention can be applied.
1‧‧‧光罩基板1a‧‧‧轉印用圖案1b‧‧‧未處理區域2‧‧‧主面3‧‧‧主面4‧‧‧端面5‧‧‧轉角面10‧‧‧基板處理裝置11‧‧‧保持器12‧‧‧夾緊構件12a‧‧‧夾緊構件12b‧‧‧夾緊構件13‧‧‧驅動器件14‧‧‧擦洗材15‧‧‧擦洗移動器件16‧‧‧上表面側處理液供給器件17‧‧‧下表面側處理液供給器件18‧‧‧控制部19‧‧‧旋轉軸21‧‧‧銷22‧‧‧接觸面25‧‧‧臂30‧‧‧處理液50‧‧‧旋轉洗淨裝置51‧‧‧保持器52‧‧‧護罩53‧‧‧旋轉軸54‧‧‧驅動部55‧‧‧擦洗材56‧‧‧上側處理液供給管線57‧‧‧下側處理液供給管線58‧‧‧銷59‧‧‧夾頭A‧‧‧部分B1‧‧‧間隔距離d‧‧‧尺寸L‧‧‧接觸長度L1‧‧‧接觸長度L2‧‧‧接觸長度W1‧‧‧長邊之長度W2‧‧‧短邊之長度X‧‧‧方向Y‧‧‧方向Z‧‧‧方向θ‧‧‧開口角度1‧‧‧Mask substrate 1a‧‧‧Pattern for transfer 1b‧‧‧Unprocessed area 2.‧‧Main surface 3‧‧‧Main surface 4‧‧‧End surface 5‧‧‧Corner surface 10‧‧‧Substrate Handling device 11‧‧‧Retainer 12‧‧‧Clamping member 12a‧‧‧Clamping member 12b‧‧‧Clamping member 13‧‧‧Drive device 14‧‧‧Scrubbing material 15‧‧‧Scrubbing moving device 16‧ ‧‧Upper surface side processing liquid supply device 17‧‧‧Lower surface side processing liquid supply device 18‧‧‧Control part 19‧‧‧Rotating shaft 21‧‧‧Pin 22‧‧‧Contact surface 25‧‧‧Arm 30‧ ‧‧Processing liquid 50‧‧‧Rotary cleaning device 51‧‧‧Retainer 52‧‧‧Shield 53‧‧‧Rotating shaft 54‧‧‧Drive unit 55‧‧‧Scrubbing material 56‧‧‧Upper side treatment liquid supply Pipeline 57‧‧‧Lower processing liquid supply pipe 58‧‧‧Pin 59‧‧‧Clamp A‧‧‧Part B1‧‧‧Separation distance d‧‧‧Dimension L‧‧‧Contact length L1‧‧‧Contact length L2‧‧‧Contact length W1‧‧‧Long side length W2‧‧‧Short side length X‧‧‧Direction Y‧‧‧Direction Z‧‧‧Direction θ‧‧‧Opening angle
圖1係表示作為參考例之旋轉洗淨裝置之構成例之側視概略圖。 圖2(a)係表示使用圖1所示之洗淨裝置以擦洗材洗淨基板之背面之情形時之配置之側視概略圖,(b)係表示使用圖1所示之旋轉洗淨裝置以擦洗材洗淨基板之膜面之情形時之配置之側視概略圖。 圖3係說明洗淨基板之背面時之異物之滲入之側視概略圖。 圖4係表示本發明之實施形態之基板處理裝置之構成例之概略側視圖。 圖5(a)係表示保持器之構成之概略側視圖,(b)係表示保持器之銷配置之概略俯視圖。 圖6係將圖4之A部分放大之圖。 圖7係表示夾緊構件對基板之保持例之概略俯視圖(其一)。 圖8係表示夾緊構件對基板之保持例之概略俯視圖(其二)。 圖9係表示夾緊構件對基板之保持例之概略俯視圖(其三)。 圖10(a)係表示使夾緊構件向鉛直方向之上側移動而使基板與保持器分離之例之側視概略圖,(b)係表示使保持器向鉛直方向之下側移動而使基板與保持器分離之例之側視概略圖。 圖11係表示將擦洗移動器件導入至基板之朝下面與保持器之間之空間並使擦洗材移動之情況的側視概略圖。 圖12係表示擦洗材之形狀與移動軌跡之一例之立體圖。 圖13(a)~(f)係說明本發明之第1實施形態之基板處理方法之圖(其一)。 圖14(a)~(f)係說明本發明之第1實施形態之基板處理方法之圖(其二)。 圖15係說明本發明之第2實施形態之基板處理方法之圖。 圖16係說明本發明之第3實施形態之基板處理方法之圖。Fig. 1 is a schematic side view showing a configuration example of a rotary cleaning device as a reference example. Figure 2 (a) is a schematic side view showing the configuration when the cleaning device shown in Figure 1 is used to clean the back of the substrate with a scrubbing material, and (b) is a schematic side view showing the use of the rotary cleaning device shown in Figure 1 A schematic side view of the configuration when the film surface of the substrate is cleaned with a scrubbing material. FIG. 3 is a schematic side view illustrating the penetration of foreign matter when cleaning the back surface of the substrate. Fig. 4 is a schematic side view showing a configuration example of the substrate processing apparatus according to the embodiment of the present invention. Fig. 5 (a) is a schematic side view showing the structure of the retainer, and (b) is a schematic plan view showing the pin arrangement of the retainer. Figure 6 is an enlarged view of part A of Figure 4; Fig. 7 is a schematic plan view showing an example of holding the substrate by the clamp member (No. 1). Fig. 8 is a schematic plan view showing an example of holding the substrate by the clamp member (Part 2). Fig. 9 is a schematic plan view showing an example of holding the substrate by the clamp member (No. 3). Fig. 10 (a) is a schematic side view showing an example in which the clamping member is moved upward in the vertical direction to separate the substrate from the holder, and (b) is a schematic side view showing an example of moving the holder downward in the vertical direction to make the substrate A schematic side view of the case separated from the holder. Fig. 11 is a schematic side view showing a state in which the scrubbing moving device is introduced into the space between the downward face of the substrate and the holder and the scrubbing material is moved. Fig. 12 is a perspective view showing an example of the shape and movement trajectory of the scrubbing material. Figures 13(a) to (f) are diagrams illustrating the substrate processing method of the first embodiment of the present invention (No. 1). 14(a) to (f) are diagrams (Part 2) for explaining the substrate processing method of the first embodiment of the present invention. Fig. 15 is a diagram illustrating a substrate processing method according to the second embodiment of the present invention. Fig. 16 is a diagram illustrating a substrate processing method according to a third embodiment of the present invention.
1‧‧‧光罩基板 1‧‧‧Mask substrate
1a‧‧‧轉印用圖案 1a‧‧‧Pattern for transfer
2‧‧‧主面 2‧‧‧Main side
3‧‧‧主面 3‧‧‧Main side
10‧‧‧基板處理裝置 10‧‧‧Substrate processing equipment
11‧‧‧保持器 11‧‧‧Retainer
12‧‧‧夾緊構件 12‧‧‧Clamping member
13‧‧‧驅動器件 13‧‧‧Drive device
14‧‧‧擦洗材 14‧‧‧Scrubbing material
15‧‧‧擦洗移動器件 15‧‧‧Wipe the mobile device
16‧‧‧上表面側處理液供給器件 16‧‧‧Upper surface side processing liquid supply device
17‧‧‧下表面側處理液供給器件 17‧‧‧Bottom surface side processing liquid supply device
18‧‧‧控制部 18‧‧‧Control Department
19‧‧‧旋轉軸 19‧‧‧Rotating axis
21‧‧‧銷 21‧‧‧pin
25‧‧‧臂 25‧‧‧arm
A‧‧‧部分 Part A‧‧‧
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