JP2015065396A - Substrate processing method, substrate processing system and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity.SOLUTION: A substrate processing method according to an embodiment comprises a process liquid supply process and a storage process. In the process liquid supply process, a process liquid which contains a volatile component and used for forming a film on a substrate is supplied to a substrate after dry etching or after ashing, on which at least a part of metal wiring formed inside is exposed. In the storage process, the substrate on which the process liquid is solidified or cured by vaporization of the volatile component is stored in a transport container.

Description

  Embodiments disclosed herein relate to a substrate processing method, a substrate processing system, and a storage medium.

  Conventionally, a dry etching process is known in which a part of metal wiring formed inside a substrate is exposed by performing dry etching on a substrate such as a semiconductor wafer (see Patent Document 1).

  If the substrate is left for a long time after the metal wiring inside the substrate is exposed by such a dry etching process, adverse effects such as oxidation of the exposed metal wiring occur. For this reason, a time limit (Q-time) is provided for the standing time after the dry etching step.

JP 2010-027786 A

  However, the above-described prior art requires time management for complying with the time limit (Q-time), and therefore, the problem is a decrease in productivity due to an increase in man-hours.

  An object of one embodiment is to provide a substrate processing method, a substrate processing system, and a storage medium that can improve productivity.

  The substrate processing method which concerns on the one aspect | mode of embodiment contains a process liquid supply process and the accommodation process. In the treatment liquid supply step, a treatment liquid for forming a film on the substrate containing a volatile component is supplied to the substrate after dry etching or ashing where at least a part of the metal wiring formed therein is exposed. In the storing step, the substrate in which the processing liquid is solidified or hardened by volatilization of the volatile component is stored in the transport container.

  According to one aspect of the embodiment, productivity can be improved.

FIG. 1A is an explanatory diagram of a substrate processing method according to the first embodiment. FIG. 1B is an explanatory diagram of the substrate processing method according to the first embodiment. FIG. 1C is an explanatory diagram of the substrate processing method according to the first embodiment. FIG. 2 is a diagram illustrating a schematic configuration of the substrate processing system according to the first embodiment. FIG. 3 is a diagram showing a schematic configuration of the first processing apparatus. FIG. 4 is a diagram illustrating a schematic configuration of the second processing apparatus. FIG. 5 is a schematic diagram showing an example of the configuration of the dry etching unit. FIG. 6 is a schematic diagram illustrating an example of the configuration of the first liquid processing unit. FIG. 7 is a schematic diagram showing an example of the configuration of the second liquid processing unit. FIG. 8 is a flowchart showing a processing procedure of substrate processing according to the first embodiment. FIG. 9A is a diagram illustrating an example of the back surface cleaning process. FIG. 9B is a diagram illustrating an example of the back surface cleaning process. FIG. 10 is a diagram illustrating another example of the back surface cleaning process. FIG. 11 is a diagram illustrating another example of the back surface cleaning process. FIG. 12 is a diagram illustrating a schematic configuration of a first processing apparatus according to the third embodiment. FIG. 13 is a diagram illustrating a schematic configuration of a second processing apparatus according to the third embodiment. FIG. 14 is a diagram illustrating a schematic configuration of a second processing apparatus according to the fourth embodiment. FIG. 15 is a schematic diagram illustrating an example of a configuration of a removal unit according to the fourth embodiment. FIG. 16 is a diagram illustrating a schematic configuration of a second processing apparatus according to the fifth embodiment.

  Hereinafter, embodiments of a substrate processing method, a substrate processing system, and a storage medium disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

(First embodiment)
<Contents of substrate processing method>
First, the substrate processing method according to the first embodiment will be described with reference to FIGS. 1A to 1C. 1A to 1C are explanatory diagrams of a substrate processing method according to the first embodiment.

  In the substrate processing method according to the first embodiment, a substrate such as a semiconductor wafer (hereinafter referred to as a wafer W) in which at least a part of metal wiring formed therein is exposed is not subject to Q-time restrictions. It can be processed.

  Here, Q-time is a time limit set with respect to the standing time after dry etching in order to prevent, for example, oxidation of metal wiring exposed by dry etching.

  When Q-time is set, time management for complying with Q-time is required, and thus there is a risk that productivity decreases due to an increase in man-hours. Moreover, when the Q-time to be set is short, line management becomes difficult. For this reason, there is a concern that productivity may be lowered due to complicated line management.

  As shown in FIG. 1A, the wafer W includes, for example, a wiring layer 101, a liner film 103, and an interlayer insulating film 104. These are laminated in the order of the wiring layer 101, the liner film 103 and the interlayer insulating film 104. In the wiring layer 101, a Cu wiring 102 which is an example of a metal wiring is formed.

  Further, the wafer W has a via hole 106. The via hole 106 is formed by dry etching. The via hole 106 reaches the wiring layer 101, and the surface of the Cu wiring 102 is exposed from the bottom of the via hole 106.

  In the substrate processing method according to the first embodiment, as shown in FIG. 1B, a processing liquid for forming a film on the wafer W containing a volatile component (hereinafter referred to as a “film forming processing liquid”) is used. It is supplied onto the wafer W. Specifically, in the first embodiment, a film-forming treatment liquid (hereinafter referred to as “topcoat liquid”) for forming a topcoat film on the wafer W is supplied onto the wafer W.

  Here, the top coat film is a protective film applied to the upper surface of the resist film in order to prevent the immersion liquid from entering the resist film. The immersion liquid is a liquid used for immersion exposure in a lithography process, for example.

  The topcoat liquid supplied onto the wafer W is solidified or cured while causing volume shrinkage due to volatilization of the volatile components contained therein, thereby forming a topcoat film (see FIG. 1C). The topcoat liquid contains an acrylic resin having a property that the volume shrinks when solidifying or curing, and the volume shrinkage of the topcoat liquid is also caused by the curing shrinkage of the acrylic resin. As used herein, “solidification” means solidification, and “curing” means that molecules are connected to each other to become a polymer (for example, crosslinking or polymerization).

  When the topcoat film is formed on the wafer W, the Cu wiring 102 exposed by dry etching is covered with the topcoat film. The wafer W is accommodated in the transfer container in this state.

  As described above, according to the substrate processing method according to the first embodiment, since the exposed Cu wiring 102 is protected by the top coat film, the exposed Cu wiring 102 is not adversely affected by oxidation or the like. Q-time setting is not required. Since Q-time is not required, time management for complying with Q-time is not required, and complexity of line management associated with compliance with Q-time can be prevented. Therefore, according to the substrate processing method according to the first embodiment, productivity can be improved.

  Moreover, the reaction product P grows when the dry etching residual gas reacts with moisture and oxygen in the atmosphere. On the other hand, according to the substrate processing method according to the first embodiment, the growth of the reaction product P can be suppressed by protecting the exposed Cu wiring 102 with the top coat film. Therefore, adverse effects such as a decrease in electrical characteristics and a decrease in yield due to the reaction product P can be prevented.

  In the substrate processing method according to the first embodiment, the polymer generated by dry etching or ashing is performed by removing the top coat film formed on the wafer W after taking out the wafer W accommodated in the transfer container. The process which removes reaction products P, such as these, is also performed.

  Specifically, a removal liquid for removing the topcoat film is supplied onto the topcoat film. In the first embodiment, an alkaline developer is used as the remover.

  The top coat film is peeled off from the wafer W by supplying the alkali developer. At this time, the reaction product P remaining on the wafer W is also peeled off from the wafer W together with the top coat film. Thereby, the reaction product P can be removed from the wafer W.

  As described above, according to the substrate processing method according to the first embodiment, the reaction product can be removed without using a chemical action, so that damage to the Cu wiring 102 due to an etching action or the like is suppressed. Can do.

  Therefore, according to the substrate processing method according to the first embodiment, the reaction product P remaining on the wafer W after dry etching or ashing can be removed while suppressing damage to the wafer W. The top coat film is completely removed from the wafer W without being subjected to pattern exposure after being formed on the wafer W.

  The top coat liquid is solidified or cured while causing volume shrinkage to form a top coat film. The reaction product P remaining on the wafer W can be pulled away from the wafer W also by strain (tensile force) caused by the volume shrinkage of the top coat liquid at this time.

  Since the topcoat liquid causes volume shrinkage due to volatilization of volatile components and curing shrinkage of acrylic resin, the volume shrinkage ratio is larger than that of a film-forming treatment liquid containing only volatile components, and the reaction product P is strongly separated. be able to. In particular, the acrylic resin has a larger cure shrinkage than other resins such as an epoxy resin, and therefore the topcoat liquid is effective in that it gives a tensile force to the reaction product P.

  Further, the top coat film swells when it is peeled off by the alkali developer. For this reason, according to the substrate processing method according to the first embodiment, the reaction product P is strongly separated from the wafer W not only by volume shrinkage due to volatilization of the topcoat solution but also by volume expansion due to swelling of the topcoat film. be able to.

  Moreover, in 1st Embodiment, it is supposed that the removal efficiency of the reaction product P will be improved by using what has alkalinity as a removal liquid.

  By supplying the alkali developer, a zeta potential having the same polarity is generated on the surface of the wafer W and the surface of the reaction product P. The reaction product P separated from the wafer W due to the change in the volume of the top coat liquid is charged with a zeta potential having the same polarity as that of the wafer W, so that it repels the wafer W. Thereby, the reattachment of the reaction product P to the wafer W is prevented.

  Thus, after the reaction product P is pulled away from the wafer W or the like using the volume shrinkage of the top coat liquid, the reaction product is generated by generating a zeta potential of the same polarity in the wafer W and the reaction product P. Since re-deposition of P is prevented, the removal efficiency of the reaction product P can be increased.

  The alkaline developer may contain at least one of ammonia, tetramethylammonium hydroxide (TMAH), and an aqueous choline solution, for example.

  In addition, according to the substrate processing method according to the first embodiment, the reaction product P that has entered the via hole 106, which has been difficult to remove by, for example, a cleaning method using physical force, can be easily removed. .

  Note that the top coat film formed on the wafer W is finally all removed from the wafer W. Therefore, the wafer W after the top coat film is removed is in a state before the top coat liquid is supplied, that is, the Cu wiring 102 is exposed.

<Configuration of substrate processing system>
Next, a configuration of a substrate processing system that executes the above-described substrate processing method will be described with reference to FIG. FIG. 2 is a diagram illustrating a schematic configuration of the substrate processing system according to the first embodiment.

  As shown in FIG. 2, the substrate processing system 1 according to the first embodiment includes a first processing apparatus 2 as a pre-processing apparatus and a second processing apparatus 3 as a post-processing apparatus. The substrate processing system 1 includes a first control device 4A and a second control device 4B.

  The first processing apparatus 2 performs dry etching and topcoat liquid supply to the wafer W. Further, the second processing apparatus 3 supplies an alkaline developer to the wafer W processed by the first processing apparatus 2.

  4A of 1st control apparatuses are computers, for example, and are provided with the control part 401 and the memory | storage part 402. FIG. The storage unit 402 is configured by a storage device such as a RAM (Random Access Memory), a ROM (Read Only Memory), and a hard disk, for example, and stores programs for controlling various processes executed in the first processing device 2. The control unit 401 is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing device 2 by reading and executing a program stored in the storage unit 402.

  Similarly, the 2nd control apparatus 4B is a computer, for example, and is provided with the control part 403 and the memory | storage part 404. FIG. The storage unit 404 is configured by a storage device such as a RAM, a ROM, and a hard disk, for example, and stores programs for controlling various processes executed in the second processing device 3. The control unit 403 is, for example, a CPU, and controls the operation of the second processing device 3 by reading and executing a program stored in the storage unit 404.

  These programs are recorded in a computer-readable storage medium, and are installed in the storage unit 402 of the first control device 4A and the storage unit 404 of the second control device 4B from the storage medium. It may be. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

<Configuration of first processing apparatus>
Next, the configuration of the first processing apparatus 2 will be described with reference to FIG. FIG. 3 is a diagram showing a schematic configuration of the first processing apparatus 2. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 3, the first processing apparatus 2 includes a carry-in / out station 5 and a processing station 6. The carry-in / out station 5 and the processing station 6 are provided adjacent to each other.

  The carry-in / out station 5 includes a placement unit 10 and a conveyance unit 11. A plurality of transfer containers (hereinafter referred to as carriers C) for storing a plurality of wafers W in a horizontal state are mounted on the mounting unit 10.

  The transport unit 11 is provided adjacent to the placement unit 10 and includes a substrate transport device 111 therein. The substrate transfer device 111 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 111 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the processing station 6 using the wafer holding mechanism. Do.

  Specifically, the substrate transfer apparatus 111 performs a process of taking out the wafer W from the carrier C placed on the placement unit 10 and carrying the taken out wafer W into the dry etching unit 12 of the processing station 6 described later. Further, the substrate transfer apparatus 111 also performs a process of taking out the wafer W from the first liquid processing unit 14 of the processing station 6 described later and storing the taken out wafer W in the carrier C of the mounting unit 10.

  The processing station 6 is provided adjacent to the transport unit 11. The processing station 6 includes a dry etching unit 12, a load lock chamber 13, and a first liquid processing unit 14.

  The dry etching unit 12 corresponds to an example of a preprocessing unit, and performs a dry etching process on the wafer W loaded by the substrate transfer device 111. As a result, a via hole 106 is formed, and the Cu wiring 102 (see FIG. 1A) inside the wafer W is exposed.

  Note that the dry etching process is performed in a reduced pressure state. In the dry etching unit 12, an ashing process for removing unnecessary resist may be performed after the dry etching process.

  The load lock chamber 13 is configured so that the internal pressure can be switched between an atmospheric pressure state and a reduced pressure state. A substrate transfer device (not shown) is provided inside the load lock chamber 13. The wafer W that has been processed in the dry etching unit 12 is unloaded from the dry etching unit 12 by a substrate transfer device (not shown) in the load lock chamber 13 and loaded into the first liquid processing unit 14.

  Specifically, the inside of the load lock chamber 13 is kept under reduced pressure until the wafer W is unloaded from the dry etching unit 12, and after the unloading is completed, an inert gas such as nitrogen or argon is supplied. To switch to atmospheric pressure. Then, after switching to the atmospheric pressure state, a substrate transfer device (not shown) in the load lock chamber 13 carries the wafer W into the first liquid processing unit 14.

  As described above, since the wafer W is cut off from the outside air until it is transferred from the dry etching unit 12 to the first liquid processing unit 14, oxidation of the exposed Cu wiring 102 is prevented.

  Subsequently, the first liquid processing unit 14 performs a film forming process liquid supply process for supplying the topcoat liquid to the wafer W. As described above, the top coat liquid supplied to the wafer W is solidified or cured while causing volume shrinkage to form a top coat film. As a result, the exposed Cu wiring 102 is covered with the top coat film.

  The wafer W after the film forming process liquid supply process is accommodated in the carrier C by the substrate transfer device 111 and then transferred to the second processing device 3.

<Configuration of second processing apparatus>
Next, the configuration of the second processing apparatus 3 will be described with reference to FIG. FIG. 4 is a diagram showing a schematic configuration of the second processing apparatus 3.

  As shown in FIG. 4, the second processing device 3 includes a carry-in / out station 7 and a processing station 8. The carry-in / out station 7 and the processing station 8 are provided adjacent to each other.

  The carry-in / out station 7 includes a placement unit 16 and a transport unit 17. A plurality of carriers C are placed on the placement unit 16.

  The transport unit 17 is provided adjacent to the placement unit 16 and includes a substrate transport device 171 and a delivery unit 172 therein. The substrate transfer device 171 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 171 can move in the horizontal direction and the vertical direction and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 172 using the wafer holding mechanism. Do.

  The processing station 8 is provided adjacent to the transfer unit 17. The processing station 8 includes a transport unit 18 and a plurality of second liquid processing units 19. The plurality of second liquid processing units 19 are provided side by side on both sides of the transport unit 18.

  The transport unit 18 includes a substrate transport device 181 inside. The substrate transfer device 181 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 181 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer is transferred between the delivery unit 172 and the second liquid processing unit 19 using a wafer holding mechanism. W is transported.

  In the second processing apparatus 3, the substrate transfer apparatus 171 of the loading / unloading station 7 takes out the wafer W processed by the first processing apparatus 2 from the carrier C and places the taken wafer W on the delivery unit 172. The wafer W placed on the delivery unit 172 is taken out from the delivery unit 172 by the substrate transfer device 181 of the processing station 8 and carried into the second liquid processing unit 19.

  In the second liquid processing unit 19, for example, a process of supplying an alkali developer to remove the top coat film is performed on the wafer W. Thereby, the reaction product P remaining on the wafer W is removed as the topcoat film is peeled off. In the second liquid processing unit 19, the wafer W from which the top coat film has been removed is also cleaned with a chemical solution. Here, DHF (dilute hydrofluoric acid) is used as the chemical solution.

  Thereafter, the wafer W is unloaded from the second liquid processing unit 19 by the substrate transfer device 181 and placed on the delivery unit 172. Then, the processed wafer W placed on the delivery unit 172 is returned to the carrier C of the placement unit 16 by the substrate transfer device 171.

<Configuration of dry etching unit>
Next, the structure of each unit with which the 1st processing apparatus 2 and the 2nd processing apparatus 3 which were mentioned above are provided is demonstrated. First, the configuration of the dry etching unit 12 included in the first processing apparatus 2 will be described with reference to FIG. FIG. 5 is a schematic diagram illustrating an example of the configuration of the dry etching unit 12.

  As shown in FIG. 5, the dry etching unit 12 includes a chamber 201 having a sealed structure that accommodates the wafer W, and a mounting table 202 for mounting the wafer W in a horizontal state is provided in the chamber 201. The mounting table 202 includes a temperature adjustment mechanism 203 that adjusts the wafer W to a predetermined temperature by cooling or heating the wafer W. A loading / unloading port (not shown) for loading / unloading the wafer W to / from the load lock chamber 13 is provided on the side wall of the chamber 201.

  A shower head 204 is provided on the ceiling of the chamber 201. A gas supply pipe 205 is connected to the shower head 204. An etching gas supply source 207 is connected to the gas supply pipe 205 via a valve 206, and a predetermined etching gas is supplied from the etching gas supply source 207 to the shower head 204. The shower head 204 supplies the etching gas supplied from the etching gas supply source 207 into the chamber 201.

  The etching gas supplied from the etching gas supply source 207 is, for example, CH3F gas, CH2F2 gas, CF4 gas, O2 gas, Ar gas source, or the like.

  An exhaust device 209 is connected to the bottom of the chamber 201 via an exhaust line 208. The pressure inside the chamber 201 is maintained in a reduced pressure state by the exhaust device 209.

  The dry etching unit 12 is configured as described above, and supplies the etching gas into the chamber 201 from the shower head 204 in a state where the inside of the chamber 201 is depressurized by using the exhaust device 209. The mounted wafer W is dry-etched. As a result, a via hole 106 (see FIG. 1A) is formed in the wafer W, and the Cu wiring 102 is exposed.

  Further, in the dry etching unit 12, for example, after the interlayer insulating film 104 (see FIG. 1A) is dry etched using the resist film as a mask, an ashing process for removing the resist film may be performed.

<Configuration of first liquid processing unit>
Next, the structure of the 1st liquid processing unit 14 with which the 1st processing apparatus 2 is provided is demonstrated with reference to FIG. FIG. 6 is a schematic diagram illustrating an example of the configuration of the first liquid processing unit 14.

  As shown in FIG. 6, the first liquid processing unit 14 includes a chamber 20, a substrate holding mechanism 30, liquid supply units 40 </ b> _ <b> 1 and 40 </ b> _ <b> 2, and a recovery cup 50.

  The chamber 20 accommodates the substrate holding mechanism 30, the liquid supply units 40_1 and 40_2, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a down flow in the chamber 20.

  An inert gas supply source 23 is connected to the FFU 21 via a valve 22. The FFU 21 discharges an inert gas such as N 2 gas supplied from the inert gas supply source 23 into the chamber 20. Thus, by using an inert gas as the downflow gas, it is possible to prevent the exposed Cu wiring 102 (see FIG. 1A) from being oxidized.

  The substrate holding mechanism 30 includes a rotation holding unit 31 that rotatably holds the wafer W, and a fluid supply unit 32 that is inserted into the hollow portion 314 of the rotation holding unit 31 and supplies gas to the lower surface of the wafer W.

  The rotation holding unit 31 is provided in the approximate center of the chamber 20. A holding member 311 for holding the wafer W from the side surface is provided on the upper surface of the rotation holding unit 31. The wafer W is horizontally held by the holding member 311 while being slightly separated from the upper surface of the rotation holding unit 31.

  The rotation holding unit 31 includes a drive mechanism 312 including a motor and a belt that transmits the rotation of the motor to the rotation holding unit 31. The rotation holding unit 31 is rotated around the vertical axis by the drive mechanism 312. Then, when the rotation holding unit 31 rotates, the wafer W held by the rotation holding unit 31 rotates integrally with the rotation holding unit 31. The rotation holding unit 31 is rotatably supported by the chamber 20 and the recovery cup 50 via a bearing 313.

  The fluid supply part 32 is inserted through a hollow part 314 formed at the center of the rotation holding part 31. A flow path 321 is formed inside the fluid supply unit 32, and an N 2 supply source 34 is connected to the flow path 321 through a valve 33. The fluid supply unit 32 supplies N 2 gas supplied from the N 2 supply source 34 to the lower surface of the wafer W via the valve 33 and the flow path 321.

  The N2 gas supplied through the valve 33 is a high-temperature (for example, about 90 ° C.) N2 gas, and is used for a volatilization promoting process described later.

  When the substrate holding mechanism 30 receives a wafer W from a substrate transfer device (not shown) of the load lock chamber 13, the substrate holding mechanism 30 is placed on the upper surface of the fluid supply unit 32 in a state where the fluid supply unit 32 is lifted using a lifting mechanism (not shown). The wafer W is placed on the provided support pins (not shown). Thereafter, the substrate holding mechanism 30 lowers the fluid supply unit 32 to a predetermined position, and then transfers the wafer W to the holding member 311 of the rotation holding unit 31. In addition, when the processed wafer W is transferred to the substrate transfer apparatus 111, the substrate holding mechanism 30 raises the fluid supply unit 32 using a lifting mechanism (not shown), and shows the wafer W held by the holding member 311. Do not place on the support pins. Then, the substrate holding mechanism 30 passes the wafer W placed on support pins (not shown) to the substrate transfer device 111.

  The liquid supply unit 40_1 includes nozzles 41a to 41c, an arm 42, and a swivel lifting mechanism 43.

  A DHF supply source 45a is connected to the nozzle 41a via a valve 44a, a DIW supply source 45b is connected to the nozzle 41b via a valve 44b, and an IPA supply source 45c is connected to the nozzle 41c via a valve 44c. Are connected to each other. The DHF supplied from the nozzle 41a is diluted hydrofluoric acid diluted to a concentration that does not corrode the Cu wiring 102. The arm 42 horizontally supports the nozzles 41a to 41c, and the turning lift mechanism 43 turns and lifts the arm 42.

  The liquid supply unit 40_1 supplies a predetermined chemical (here, DHF) to the wafer W from the nozzle 41a, supplies DIW (pure water), which is a type of rinse liquid, from the nozzle 41b, and is a type of dry solvent. IPA (isopropyl alcohol) is supplied from the nozzle 41c.

  The liquid supply unit 40_2 includes nozzles 41d and 41e, an arm 42 that horizontally supports the nozzles 41d and 41e, and a turning lift mechanism 43 that turns and lifts the arm 42. A MIBC supply source 45d is connected to the nozzle 41d via a valve 44d, and a topcoat liquid supply source 45e is connected to the nozzle 41e via a valve 44e.

  The liquid supply unit 40_2 supplies the wafer W with MIBC (4-methyl-2-pentanol) as a solvent having an affinity for the topcoat liquid from the nozzle 41d and supplies the topcoat liquid from the nozzle 41e.

  MIBC is also contained in the topcoat solution and has an affinity for the topcoat solution. For example, PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), or the like may be used as a solvent having an affinity with the top coat liquid other than MIBC.

  Here, the dedicated nozzles 41a to 41e are provided for each processing liquid, but the nozzles may be shared by a plurality of processing liquids. However, when the nozzle is shared, for example, when it is not desired to mix the processing liquids, a process of once discharging the processing liquid remaining in the nozzles and the pipes is required, and the processing liquid is consumed wastefully. On the other hand, if the dedicated nozzles 41a to 41e are provided, the process liquid discharging step as described above is not required, and the process liquid is not wasted.

  The collection cup 50 is disposed so as to surround the rotation holding unit 31 and collects the processing liquid scattered from the wafer W by the rotation of the rotation holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the first liquid processing unit 14. Further, an exhaust port 52 for discharging the N 2 gas supplied from the fluid supply unit 32 and the inert gas supplied from the FFU 21 to the outside of the first liquid processing unit 14 is formed at the bottom of the recovery cup 50.

<Configuration of second liquid processing unit>
Next, the structure of the 2nd liquid processing unit 19 with which the 2nd processing apparatus 3 is provided is demonstrated with reference to FIG. FIG. 7 is a schematic diagram showing an example of the configuration of the second liquid processing unit 19.

  As shown in FIG. 7, the second liquid processing unit 19 includes a substrate holding mechanism 70, a liquid supply unit 80, and a recovery cup 90 in the chamber 60.

  The substrate holding mechanism 70 includes a rotation holding unit 71, a column unit 72, and a driving unit 73. The rotation holding unit 71 is provided in the approximate center of the chamber 60. A holding member 711 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding unit 71. The wafer W is horizontally held by the holding member 711 while being slightly separated from the upper surface of the rotation holding unit 71. The column portion 72 is a member extending in the vertical direction, and a base end portion thereof is rotatably supported by the drive unit 73 and horizontally supports the rotation holding unit 71 at the distal end portion. The drive unit 73 rotates the support column 72 around the vertical axis.

  The substrate holding mechanism 70 rotates the support 72 by rotating the support 72 by using the driving unit 73, thereby rotating the wafer W held by the support 71. Rotate.

  The liquid supply unit 80 includes nozzles 81 a to 81 c, an arm 82, and a turning lift mechanism 83.

  The nozzle 81a is connected to a DHF supply source 85a via a valve 84a, the nozzle 81b is connected to an alkaline developer supply source 85b via a valve 84b, and the nozzle 81c is supplied with DIW via a valve 84c. A source 85c is connected. The arm 82 supports the nozzles 81a to 81c horizontally. The turning lift mechanism 83 turns and lifts the arm 82.

  The liquid supply unit 80 supplies DHF, which is a predetermined chemical solution, to the wafer W from the nozzle 81a, supplies an alkaline developer, which is a removal liquid for removing the topcoat film, from the nozzle 81b, and DIW, which is a rinse liquid. Is supplied from the nozzle 81c.

  The alkaline developer supplied from the nozzle 81 b contains an anticorrosive agent that prevents corrosion of the Cu wiring 102. As a result, the top coat film can be removed while suppressing damage to the Cu wiring 102 in the removal liquid supply process described later. Further, the DHF supplied from the nozzle 81 a is diluted to a concentration that does not corrode the Cu wiring 102.

  The collection cup 90 is disposed so as to surround the rotation holding unit 71 in order to prevent the treatment liquid from being scattered around. A drain port 91 is formed at the bottom of the recovery cup 90, and the processing liquid collected by the recovery cup 90 is discharged from the drain port 91 to the outside of the second liquid processing unit 19.

  As described above, the second liquid processing unit 19 according to the first embodiment performs a predetermined post-processing on the removal unit that removes the topcoat film from the wafer W and the wafer W from which the topcoat film has been removed. This corresponds to an example of a processing unit.

<Specific operation of substrate processing system>
Next, a specific operation of the substrate processing system 1 will be described with reference to FIG. FIG. 8 is a flowchart showing a processing procedure of substrate processing according to the first embodiment. Each processing procedure shown in FIG. 8 is performed based on the control of the first control device 4A or the second control device 4B.

  In the substrate processing system 1 according to the first embodiment, the processes from the dry etching process (step S101) to the first carry-out process (step S107) shown in FIG. 8 are performed in the first processing apparatus 2, and the removal liquid supply process is performed. Processing from (Step S108) to the second carry-out processing (Step S110) is performed in the second processing device 3.

  As shown in FIG. 8, first, dry etching processing is performed in the dry etching unit 12 (step S101). In the dry etching process, the dry etching unit 12 performs dry etching or ashing on the wafer W. Thereby, the Cu wiring 102 provided inside the wafer W is exposed (see FIG. 1A).

  Subsequently, the wafer W is carried into the first liquid processing unit 14. Since this carrying-in process is performed through the load lock chamber 13, the exposed Cu wiring 102 can be prevented from being oxidized.

  Subsequently, chemical processing is performed in the first liquid processing unit 14 (step S102). In such chemical processing, the nozzle 41a of the liquid supply unit 40_1 (see FIG. 6) is positioned above the center of the wafer W. Thereafter, DHF is supplied to the wafer W from the nozzle 41a. The DHF supplied to the wafer W spreads on the main surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

  Thereby, the Cu wiring 102 and the surface of the reaction product P are slightly dissolved by DHF, and the adhesion of the reaction product P is weakened. Therefore, the reaction product P can be easily removed.

  Here, the chemical treatment in step S102 is performed for the purpose of facilitating the removal of the reaction product P, and is performed under low etching conditions such that the reaction product P is not completely removed. The low etching conditions are, for example, a time shorter than the etching time required to completely remove the reaction product P, or a DHF concentration lower than the concentration of DHF necessary to completely remove the reaction product P. This is the condition for etching at a concentration of.

  For this reason, the reaction product P can be removed more effectively while suppressing damage to the Cu wiring 102 as compared with the conventional case where the reaction product P is removed only by DHF. In addition, since the DHF supplied from the nozzle 41a in the first embodiment is diluted to a concentration that does not corrode the Cu wiring 102, damage to the Cu wiring 102 can be more reliably suppressed.

  In the chemical treatment, the reaction product P having a relatively small particle size is easily removed, and in the removal of the reaction product P using a topcoat solution and an alkali removal solution described later, a reaction product having a relatively large particle size is used. P is easily removed. Therefore, the reaction product P can be more effectively removed by combining these treatments.

  The chemical solution supplied from the nozzle 41a is not limited to DHF, and for example, an aqueous solution containing ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide solution, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, organic acid, or ammonium fluoride. Etc.

  Subsequently, the first liquid processing unit 14 rinses the main surface of the wafer W with DIW (step S103). In the rinsing process, the nozzle 41b (see FIG. 6) is positioned above the center of the wafer W. Thereafter, the valve 44b is opened for a predetermined time, whereby DIW is supplied from the nozzle 41b to the main surface of the rotating wafer W, and DHF remaining on the wafer W is washed away.

  Subsequently, in the first liquid processing unit 14, a replacement process is performed (step S104). In such replacement processing, the nozzle 41c (see FIG. 6) is positioned above the center of the wafer W. Thereafter, when the valve 44c is opened for a predetermined time, IPA is supplied from the nozzle 41c to the main surface of the rotating wafer W, and DIW on the wafer W is replaced with IPA. Thereafter, the rotation of the wafer W stops with the IPA remaining on the wafer W. When the replacement process is completed, the liquid supply unit 40_1 moves to the outside of the wafer W. Note that the processing of steps S102 to S104 is not necessarily performed.

  Subsequently, in the first liquid processing unit 14, a solvent supply process is performed (step S105). The solvent supply process is a process of supplying to the wafer W MIBC having an affinity for the topcoat liquid before supplying the topcoat liquid, which is a film forming processing liquid, to the wafer W.

  Specifically, the nozzle 41d of the liquid supply unit 40_2 is positioned above the center of the wafer W, and thereafter, the MIBC is supplied from the nozzle 41d to the wafer W. The MIBC supplied to the wafer W is spread on the main surface of the wafer W by centrifugal force accompanying the rotation of the wafer W.

  As described above, MIBC having an affinity for the top coat liquid is spread on the wafer W in advance, so that the top coat liquid can easily spread on the wafer W in the film forming process liquid supply process described later, and a via hole is formed. 106 also easily enters. Therefore, the consumption of the topcoat liquid can be suppressed, and the reaction product P that has entered the via hole 106 can be more reliably removed.

  MIBC has an affinity with the topcoat solution, but is hardly mixed with DIW and has a low affinity. In contrast, in the first liquid processing unit 14, DIW is replaced with IPA having higher affinity with MIBC than DIW before supplying MIBC. Thereby, compared with the case where the solvent supply process (step S105) is performed immediately after the rinsing process (step S103), the MIBC can easily spread on the main surface of the wafer W, and the consumption of MIBC can be suppressed.

  Note that when the solvent having affinity for the film-forming treatment liquid has affinity for not only the film-forming treatment liquid but also DIW, the replacement process in step S104 may be omitted.

  As described above, when it is desired to efficiently spread the top coat film on the upper surface of the wafer W in a short time, it is preferable to perform the above-described solvent supply process. Note that if the film-forming treatment liquid has an affinity for IPA, the solvent supply process in step S105 may be omitted.

  Subsequently, in the first liquid processing unit 14, a film forming process liquid supply process is performed (step S106). In the film forming process liquid supply process, the nozzle 41e of the liquid supply unit 40_2 is positioned above the center of the wafer W. Thereafter, a topcoat liquid that is a film-forming treatment liquid is supplied from the nozzle 41e to the main surface of the wafer W that is a circuit formation surface on which no resist film is formed.

  The top coat liquid supplied to the wafer W spreads on the main surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, a liquid film of the top coat liquid is formed on the entire main surface of the wafer W (see FIG. 1B). At this time, the main surface of the wafer W is in a state in which the wettability is enhanced by the MIBC supplied onto the wafer W in step S105. As a result, the top coat liquid easily spreads on the main surface of the wafer W and also easily enters the via hole 106. Therefore, it is possible to reduce the amount of the top coat liquid used and shorten the processing time.

  As the volatile components are volatilized by the rotation of the wafer W, the topcoat liquid is solidified or cured. Thereby, a top coat film is formed on the entire main surface of the wafer W.

  Further, in the first liquid processing unit 14, a volatilization promoting process is performed. Such a volatilization promoting process is a process for promoting further volatilization of a volatile component contained in the top coat liquid that forms a film on the entire main surface of the wafer W. Specifically, the valve 33 (see FIG. 6) is opened for a predetermined time, whereby high-temperature N 2 gas is supplied from the fluid supply unit 32 to the back surface of the rotating wafer W. Thereby, the topcoat liquid is heated together with the wafer W, and the volatilization of the volatile components is promoted.

  The volatilization promoting process may be a process for reducing the pressure in the chamber 20 by a decompression device (not shown), or may be a process for reducing the humidity in the chamber 20 with a gas supplied from the FFU 21. These treatments can also promote the volatilization of volatile components.

  Moreover, although the example in the case where the first liquid processing unit 14 performs the volatilization promoting process is shown here, the volatilization promoting process can be omitted. That is, the first liquid processing unit 14 may wait for the wafer W until the topcoat liquid is naturally solidified or cured. Further, volatilization of the top coat liquid is stopped by stopping the rotation of the wafer W or rotating the wafer W at a rotation speed that does not expose the main surface of the wafer W by shaking the top coat liquid. It may be promoted.

  Subsequently, in the first liquid processing unit 14, a first carry-out process is performed (step S107). In the first carry-out process, the substrate transfer device 111 takes out the wafer W from the first liquid processing unit 14, transfers it to the mounting unit 10, and stores it in the carrier C mounted on the mounting unit 10.

  At this time, the exposed Cu wiring 102 of the wafer W is covered with the top coat film in a short time after dry etching (see FIG. 1C). That is, since the Cu wiring 102 is cut off from the outside air, it is not adversely affected by oxidation or the like.

  Therefore, according to the substrate processing system 1 according to the first embodiment, the time management for complying with the Q-time from the dry etching to the cleaning becomes unnecessary, so that the productivity can be improved.

  The wafer W accommodated in the carrier C is transferred from the first processing apparatus 2 to the mounting unit 16 of the second processing apparatus 3. Thereafter, the wafer W is taken out from the carrier C by the substrate transfer device 171 (see FIG. 4) of the second processing apparatus 3 and is carried into the second liquid processing unit 19 via the delivery unit 172 and the substrate transfer device 181. .

  In the second liquid processing unit 19, a removal liquid supply process is first performed (step S108). In such a removal liquid supply process, the nozzle 81b (see FIG. 7) is positioned above the center of the wafer W. Thereafter, the valve 84b is opened for a predetermined time, so that an alkaline developer as a removing solution is supplied onto the rotating wafer W from the nozzle 81b. As a result, the top coat film formed on the wafer W is peeled off and dissolved to be removed from the wafer W.

  At this time, the reaction product P remaining on the wafer W is peeled off from the wafer W and removed. At this time, since the zeta potential having the same polarity is generated in the wafer W and the reaction product P, the wafer W and the reaction product P are repelled to prevent the reaction product P from reattaching to the wafer W or the like.

  Further, the alkaline developer contains an anticorrosive agent that prevents corrosion of the Cu wiring 102. For this reason, even if an alkaline developer adheres to the Cu wiring 102, corrosion of the Cu wiring 102 can be suppressed. Therefore, according to the substrate processing system 1 according to the first embodiment, the topcoat film can be removed while suppressing damage to the Cu wiring 102.

  Subsequently, in the second liquid processing unit 19, chemical processing is performed (step S109). In such chemical processing, the nozzle 81a (see FIG. 7) is positioned above the center of the wafer W. Thereafter, DHF is supplied to the wafer W from the nozzle 81a. The DHF supplied to the wafer W spreads on the main surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W.

  As described above, after the removal liquid supply process, that is, after the top coat film is removed, the chemical liquid process is performed, so that the reaction product P (particularly having a small particle diameter) that has not been removed by peeling off the top coat film. If reaction product P) is present, such reaction product P can be removed. Even in such a case, the reaction product P can be removed more effectively while suppressing erosion of the wafer W as compared with general chemical cleaning. If the reaction product P is sufficiently removed by the removal liquid supply process, the chemical liquid process in step S109, that is, wet cleaning, may be omitted.

  When the chemical liquid processing is finished, the second liquid processing unit 19 supplies DIW from the nozzle 81c to the wafer W to rinse the main surface of the wafer W. As a result, the dissolved top coat film and the reaction product P floating in the alkaline developer are removed from the wafer W together with DIW. When the rinsing process is completed, the second liquid processing unit 19 performs a drying process in which the DIW remaining on the main surface of the wafer W is shaken off and the wafer W is dried by increasing the rotation speed of the wafer W for a predetermined time. . Thereafter, the rotation of the wafer W is stopped.

  Then, in the second liquid processing unit 19, a second unloading process is performed (step S110). In the second carry-out process, the wafer W is taken out from the second liquid processing unit 19 by the substrate transfer device 181 (see FIG. 4), and placed on the placement unit 16 via the delivery unit 172 and the substrate transfer device 171. Stored in the carrier C. When the second carry-out process is completed, a series of substrate processes for one wafer W is completed.

  As described above, the substrate processing system 1 according to the first embodiment includes the mounting unit 10, the liquid supply unit 40_2 (corresponding to an example of the processing liquid supply unit), and the substrate transfer device 111. The placement unit 10 places a carrier C capable of accommodating a plurality of wafers W. The liquid supply unit 40_2 is a processing liquid for forming a film on the wafer W containing a volatile component with respect to the wafer W after dry etching or ashing in which at least a part of the Cu wiring 102 formed therein is exposed. A certain top coat solution is supplied. The substrate transport device 111 transports the wafer W, on which the topcoat liquid is solidified or hardened due to volatilization of the volatile component, to the placement unit 10 and accommodates it in the carrier C placed on the placement unit 10.

  Therefore, according to the substrate processing system 1 according to the first embodiment, Q-time management from when the Cu wiring 102 is exposed to cleaning becomes easy, and productivity can be improved.

(Second Embodiment)
By the way, in the semiconductor manufacturing process, the back surface processing such as cleaning may be performed on the back surface of the wafer W. However, in such a case, there is a possibility that the main surface of the wafer W is contaminated when the cleaning liquid or the like used for the back surface treatment scatters around the main surface of the wafer W.

  Therefore, after the top coat film is formed on the main surface of the wafer W, that is, in a state where the main surface of the wafer W is protected by the top coat film, the back surface treatment of the wafer W is performed, so that the main surface of the wafer W is processed. It is good also as preventing contamination of.

  This point will be described with reference to FIGS. 9A and 9B. 9A and 9B are diagrams illustrating an example of the back surface cleaning process.

  As shown in FIG. 9A, the fluid supply unit 32 included in the first liquid processing unit 14A is connected to the N2 supply source 34 via the valve 33 and also to the SC1 supply source 36 via the valve 35. . The fluid supply unit 32 supplies the N 2 gas supplied from the N 2 supply source 34 to the back surface of the wafer W, and supplies SC 1 (ammonia excess water) supplied from the SC 1 supply source 36 to the back surface of the wafer W.

  The first liquid processing unit 14A performs the back surface cleaning process illustrated in FIG. 9B after performing the process of step S106 illustrated in FIG. 8, that is, after the top coat film is formed on the entire main surface of the wafer W.

  In such a back surface cleaning process, SC1 is supplied from the fluid supply unit 32 to the back surface of the rotating wafer W by opening the valve 35 for a predetermined time. Thereby, the back surface of the wafer W is cleaned.

  In this way, by cleaning the back surface of the wafer W in a state where the entire main surface of the wafer W is covered with the top coat film, even if the cleaning liquid scatters during the back surface cleaning process, It is possible to prevent the cleaning liquid from adhering to the main surface of the wafer W from being contaminated. In addition, contamination of the main surface of the wafer W due to the wraparound of the cleaning liquid can be prevented.

  9A and 9B show an example in which the process of supplying the cleaning liquid such as SC1 to the back surface of the wafer W is performed as the back surface cleaning process, but the back surface cleaning process is not limited to the above process. For example, scrub cleaning using a cleaning body such as a brush may be performed as the back surface cleaning process.

  An example in which scrub cleaning is performed as the back surface cleaning processing will be described with reference to FIG. FIG. 10 is a diagram illustrating another example of the back surface cleaning process.

  When scrub cleaning is performed as the back surface cleaning process, the first liquid processing unit 14B illustrated in FIG. 10 first performs the processes of steps S101 to S106 illustrated in FIG.

  Subsequently, the wafer W is once taken out from the first liquid processing unit 14B by the substrate transfer device 111 and then transferred to a reversing mechanism (not shown). Then, after the front and back are reversed by the reversing mechanism, the wafer W is loaded again into the first liquid processing unit 14B by the substrate transfer device 111. The reversing mechanism is provided in the processing station 6 of the first processing device 2, for example. As a configuration of the reversing mechanism, any known technique may be used.

  Subsequently, as shown in FIG. 10, the first liquid processing unit 14 </ b> B holds and rotates the wafer W whose front and back are reversed by the substrate holding mechanism 30, and then uses the brush 500 to clean the back surface of the wafer W. Scrub clean. Specifically, the first liquid processing unit 14 </ b> B moves the brush 500 in a state where the rotating brush 500 is in contact with the back surface of the wafer W, thereby removing foreign matters attached to the back surface of the wafer W.

  At this time, the entire main surface of the wafer W is covered with the top coat film. For this reason, there is no possibility that the foreign matter removed from the back surface of the wafer W adheres to the main surface of the wafer W. In addition, it is good also as supplying a fluid, such as N2 gas, from the fluid supply part 32 and preventing adhesion of the foreign material to a topcoat film | membrane.

  After the scrub cleaning, the wafer W is unloaded from the first liquid processing unit 14B by the substrate transfer device 111, reversed again by a reversing mechanism (not shown), and then accommodated in the carrier C.

  Although the brush 500 is used here, scrub cleaning may be performed using another cleaning body such as a sponge.

  Further, a process of removing particles on the back surface of the wafer W by spraying gas clusters on the back surface of the wafer W may be performed as a back surface cleaning process. This point will be described with reference to FIG. FIG. 11 is a diagram illustrating another example of the back surface cleaning process.

  As shown in FIG. 11, the first liquid processing unit 14 </ b> C includes a nozzle 600. The nozzle 600 generates a gas cluster that is an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion by injecting carbon dioxide, which is a cleaning gas, at a high pressure.

  The nozzle 600 includes a pressure chamber 601 formed in, for example, a substantially cylindrical shape so that a lower end portion is opened. The lower end portion of the pressure chamber 601 is configured to form an orifice portion 602. The orifice portion 602 is connected to a gas diffusion portion 603 whose diameter increases toward the bottom. The opening diameter in the orifice part 602 is, for example, about 0.1 mm.

  One end of a gas supply path 604 is connected to the upper end of the pressure chamber 601, and a carbon dioxide supply source 606 is connected to the gas supply path 604 via a pressure adjustment valve 605.

  The first liquid processing unit 14 </ b> C reverses the wafer W on which the topcoat film is formed and rotates the wafer W on the substrate holding mechanism 30 in the same processing procedure as that for scrub cleaning described above. The first liquid processing unit 14C supplies carbon dioxide to the nozzle 600 at a pressure higher than the pressure in the chamber 20 of the first liquid processing unit 14C. When carbon dioxide is ejected into the chamber 20 from the nozzle 600, it is cooled below the condensing temperature by rapid adiabatic expansion, and the molecules M1 are combined with each other by van der Waals forces to form a gas cluster M2 that is an aggregate. It becomes.

  The gas cluster M2 is ejected perpendicularly toward the back surface of the wafer W, and blows away and removes foreign matter adhering to the back surface of the wafer W. At this time, the entire main surface of the wafer W is covered with the top coat film. For this reason, there is no possibility that the foreign matter removed from the back surface of the wafer W adheres to the main surface of the wafer W.

  The wafer W that has been cleaned by the gas cluster M2 is unloaded from the first liquid processing unit 14C by the substrate transfer device 111, reversed again by a reversing mechanism (not shown), and then accommodated in the carrier C.

  In addition to the above-described processes, the back surface cleaning process includes, for example, two-fluid cleaning using a two-fluid nozzle that mists the cleaning liquid with gas and sprays it on the back surface of the wafer W, ultrasonic cleaning using an ultrasonic vibrator, and the like. It may be.

  Moreover, the process performed in a state where the main surface of the wafer W is covered with the top coat film is not limited to the back surface cleaning process, for example, an etching process for etching the back surface or bevel portion of the wafer W using a chemical solution. Etc. The etching process is a process of removing the oxide film using, for example, hydrofluoric acid (HF). Even if the chemical solution circulates from the back surface side of the wafer W to the main surface side by performing the etching process in a state where the main surface of the wafer W is covered with the top coat film, the main surface of the wafer W is covered with the top coat film. Since it is in a protected state, it is not etched. Thus, since the etching region is determined by the top coat film, the etching can be performed with high accuracy.

  Further, the process performed in a state where the main surface of the wafer W is covered with the top coat film may be a polishing process in which the back surface or bevel portion of the wafer W is polished using a polishing brush.

  In this way, by processing the other surface of the wafer W in a state where the main surface of the wafer W is covered with the top coat film, the other surface of the wafer W is prevented from being contaminated. Can be processed.

  In the above example, the case where the first liquid processing units 14A to 14C correspond to an example of the other surface processing unit has been described. That is, in the above example, the case where the first liquid processing units 14A to 14C perform the back surface cleaning process in addition to the film forming process liquid supply process has been described. However, the first processing apparatus 2 may include a back surface cleaning unit that performs the back surface cleaning process separately from the first liquid processing unit 14.

  In addition, other surface processing such as back surface cleaning processing may be performed in the second processing apparatus 3. In such a case, a nozzle or brush for back surface cleaning may be incorporated in the second liquid processing unit 19, or a back surface processing unit separate from the second liquid processing unit 19 may be provided in the second processing apparatus 3.

(Third embodiment)
By the way, the structure for performing the film-forming process liquid supply process and the removal liquid supply process may be retrofitted to an existing pre-processing apparatus or post-processing apparatus that does not have these structures. This point will be described in the third embodiment. FIG. 12 is a diagram illustrating a schematic configuration of a first processing apparatus according to the third embodiment.

  As shown in FIG. 12, the first processing device 2A includes a first block 2A1, a second block 2A2, and a connecting portion 2A3.

  The first block 2A1 includes a carry-in / out station 5 and a processing station 6. Since the loading / unloading station 5 is the same as the loading / unloading station 5 included in the first processing apparatus 2 according to the first embodiment, a description thereof is omitted here.

  A plurality of dry etching units 12 are arranged in the processing station 6 of the first block 2A1. Unlike the processing station 6 of the first processing apparatus 2 according to the first embodiment, the first liquid processing unit 14 is not disposed in the processing station 6 of the first block 2A1.

  The second block 2A2 includes a transport unit 11 'and a plurality of first liquid processing units 14. The transfer unit 11 ′ includes a substrate transfer apparatus 112 similar to the substrate transfer apparatus 111, and carries the wafer W into and out of the first liquid processing unit 14 using the substrate transfer apparatus 112.

  The connecting part 2A3 connects the transport part 11 of the first block 2A1 and the transport part 11 'of the second block 2A2. The connecting portion 2A3 has an internal space that is blocked from the atmosphere. The internal space is blocked from the atmosphere by being filled with an inert gas such as N 2 gas. A mounting table (not shown) is provided in the internal space.

  In the first processing apparatus 2A, the wafer W that has been processed by the dry etching unit 12 is taken out of the dry etching unit 12 by the substrate transfer apparatus 111 and then placed on a mounting table (not shown) of the connecting portion 2A3. .

  The wafer W mounted on the mounting table is taken out of the mounting table by the substrate transfer device 112 of the second block 2A2, and then transferred to the first liquid processing unit 14, and the first liquid processing unit 14 shown in FIG. Steps S102 to S106 are performed. Thereby, a top coat film is formed on the main surface of the wafer W.

  Thereafter, the wafer W is taken out from the first liquid processing unit 14 by the substrate transfer device 112 and then transferred from the substrate transfer device 112 to the substrate transfer device 111 via the mounting table (not shown) of the connecting portion 2A3. The device 111 accommodates the carrier C placed on the placement unit 10.

  As described above, the first liquid processing unit 14 that performs the film-forming processing liquid supply process is separate from the first block 2A1 that includes the placement unit 10, the substrate transfer apparatus 111, and the dry etching unit 12, and the first You may arrange | position with respect to 2nd block 2A2 connected via block 2A1 and connection part 2A3. That is, the first liquid processing unit 14 may be retrofitted to an existing pretreatment apparatus that does not include the first liquid processing unit 14.

  In such a case, when the wafer W after dry etching is transferred from the first block 2A1 to the second block 2A2 by blocking the internal space of the connecting portion 2A3 from the atmosphere, the Cu wiring 102 exposed by dry etching is oxidized. Can be suppressed.

  Note that, similarly to the internal space of the connecting portion 2A3, the inside of the transfer portions 11 and 11 'of the first block 2A1 and the second block 2A2 may be blocked from the atmosphere by, for example, filling with N2 gas. Thereby, the oxidation of the exposed Cu wiring 102 can be further suppressed.

  In the above example, the transport unit 11 of the first block 2A1 and the transport unit 11 'of the second block 2A2 are connected by the connecting unit 2A3. However, the first processing apparatus 2A may have a configuration in which, for example, the dry etching unit 12 of the first block 2A1 and the first liquid processing unit 14 of the second block 2A2 are connected by the connecting portion 2A3. In such a case, a substrate transfer device (not shown) may be disposed in the internal space of the connecting portion 2A3, and the wafer W may be transferred between the dry etching unit 12 and the first liquid processing unit 14 by the substrate transfer device. In such a case, the second block 2A2 may not include the transport unit 11 '.

  Next, a modification of the second processing apparatus will be described with reference to FIG. FIG. 13 is a diagram illustrating a schematic configuration of a second processing apparatus according to the third embodiment.

  As shown in FIG. 13, the second processing device 3A includes a first block 3A1, a second block 3A2, and a connecting portion 3A3.

  The first block 3A1 includes a carry-in / out station 7 and a processing station 8. The carry-in / out station 7 is the same as the carry-in / out station 7 included in the second processing apparatus 3 according to the first embodiment.

  A plurality of second liquid processing units 19A are arranged in the processing station 8 of the first block 3A1. The second liquid processing unit 19A excludes the configuration related to the removal liquid supply process from the second liquid processing unit 19 according to the first embodiment, specifically, the nozzle 81b, the valve 84b, and the alkaline developer supply source 85b. It has a configuration.

  The second block 3A2 includes a transport unit 18 'and a plurality of removal units 700. The transfer unit 18 ′ includes a substrate transfer device 182 similar to the substrate transfer device 181, and carries the wafer W into and out of the removal unit 700 using the substrate transfer device 182.

  The removal unit 700 has a configuration in which the nozzle 81a, the valve 84a, the DHF supply source 85a, the nozzle 81c, the valve 84c, and the DIW supply source 85c are excluded from the second liquid processing unit 19 according to the first embodiment.

  The connecting part 3A3 connects the transport part 18 of the first block 3A1 and the transport part 18 'of the second block 3A2. The connecting portion 3A3 has an internal space that is blocked from the atmosphere. The internal space is blocked from the atmosphere by being filled with an inert gas such as N 2 gas. A mounting table (not shown) is provided in the internal space.

  In the second processing apparatus 3A, the wafer W is transferred from the loading / unloading station 7 to the transfer unit 18 of the processing station 8, and then mounted on the mounting table (not shown) of the connecting unit 3A3 by the substrate transfer apparatus 181.

  The wafer W mounted on the mounting table is taken out of the mounting table by the substrate transfer device 182 of the second block 3A2, and then transferred to the removal unit 700, and the removal unit 700 performs the removal liquid supply process (step S108 in FIG. 8). ) Is performed. As a result, the top coat film is removed from the main surface of the wafer W.

  Thereafter, the wafer W is taken out from the removal unit 700 by the substrate transfer device 182 and then transferred from the substrate transfer device 182 to the substrate transfer device 181 via a mounting table (not shown) of the connecting portion 3A3. Then, the wafer W is transferred to the second liquid processing unit 19A by the substrate transfer device 181. After the chemical liquid processing (step S109 in FIG. 8) is performed by the second liquid processing unit 19A, the second unloading process (step S109) is performed. The carrier C is accommodated in step S110) of FIG.

  Thus, the removal unit 700 that performs the removal liquid supply process is separate from the first block 3A1 that includes the placement unit 16, the substrate transport device 181 and the second liquid treatment unit 19A that performs the chemical liquid treatment. You may arrange | position with respect to 2nd block 3A2 connected via block 3A1 and connection part 3A3. That is, the removal unit 700 may be retrofitted to an existing post-processing apparatus that does not include the removal unit 700.

  In this case, the oxidation of the exposed Cu wiring 102 is suppressed when the wafer W after the removal process is transferred from the second block 3A2 to the first block 3A1 by blocking the internal space of the connecting portion 3A3 from the atmosphere. it can. Note that the second processing apparatus 3A may block the inside of the transfer units 18 and 18 'of the first block 3A1 and the second block 3A2 from the atmosphere.

  The second block 3A2 may include a loading / unloading station similar to the loading / unloading station 7. In this case, the wafer W on which the top coat film is formed is loaded into the second block 3A2 from the loading / unloading station of the second block 3A2, and after removing the top coat film from the wafer W by the removal unit 700, the wafer W Is conveyed to the first block 3A1 via the connecting portion 3A3. Thereby, the conveyance efficiency of the wafer W can be improved.

(Fourth embodiment)
In the above-described embodiment, the example in which the top coat film is removed from the wafer W by supplying the alkali developer as the removal liquid to the top coat film has been described. However, the method for removing the topcoat film from the wafer W is not limited to the above example. Hereinafter, another example of the removal process for removing the topcoat film from the wafer W will be described. FIG. 14 is a diagram illustrating a schematic configuration of a second processing apparatus according to the fourth embodiment.

  As illustrated in FIG. 14, the second processing apparatus 3 </ b> B according to the fourth embodiment includes a plurality of second liquid processing units 19 </ b> B and a plurality of removal units 710 in the processing station 8.

  The second liquid processing unit 19B has the same configuration as the second liquid processing unit 19A according to the third embodiment. That is, the second liquid processing unit 19B has a configuration in which the nozzle 81b, the valve 84b, and the alkaline developer supply source 85b, which are configurations related to the removal liquid supply processing, are excluded from the second liquid processing unit 19 according to the first embodiment. Have.

  The removal unit 710 removes the film formed on the wafer W by sublimation. Here, the configuration of the removal unit 710 will be described with reference to FIG. FIG. 15 is a schematic diagram illustrating an example of the configuration of the removal unit 710 according to the fourth embodiment.

  In the fourth embodiment, a sublimable substance solution is used as the film-forming treatment liquid. As the sublimable substance, for example, ammonium silicofluoride, camphor or naphthalene can be used. The film-forming treatment liquid can be obtained by dissolving the sublimable substance in a volatile solvent such as IPA. Such a film-forming treatment solution is solidified or cured by evaporation of IPA as a solvent to form a film. Note that the film-forming treatment liquid may contain pure water in addition to the sublimable substance and IPA.

  As shown in FIG. 15, the removal unit 710 includes a hot plate 701 in which a heater 702 is built, and a plurality of support pins 703 that protrude from the upper surface of the hot plate 701. The support pins 703 support the lower surface periphery of the wafer W. As a result, a small gap is formed between the lower surface of the wafer W and the upper surface of the hot plate 701.

  An exhaust hood 704 that can be moved up and down is provided above the hot plate 701. The exhaust hood 704 has an opening at the center. An exhaust pipe 705 provided with a sublimable substance recovery device 706 and a pump 707 is connected to the opening. Note that the sublimation substance recovery device 706 may be a type that deposits a sublimation substance on a cooling plate provided in a chamber through which exhaust flows, or a gas of sublimation substance in a chamber through which exhaust flows. Various known sublimable substance recovery devices can be used, such as those that contact the cooling fluid.

  When the wafer W is placed on the support pins 703 by the substrate transfer device 181, the removal unit 710 lowers the exhaust hood 704 to form a processing space with the hot plate 701. Subsequently, the removal unit 710 sublimates the sublimable substance by the heated hot plate 701 while sucking the upper space of the wafer W by the pump 707 interposed in the exhaust pipe 705 connected to the exhaust hood 704. The wafer W is heated to a temperature higher than the temperature.

  Thereby, the sublimable substance on the wafer W is sublimated and removed from the wafer W. At this time, the sublimable substance that has been sublimated into a gas is recovered by the sublimable substance recovery device 706 and reused. Thereafter, the wafer W is taken out from the removal unit 710 by the substrate transfer device 181 and transferred to the second liquid processing unit 19B.

  In this manner, the second processing apparatus 3B heats the wafer W to a temperature higher than the sublimation temperature of the sublimable substance contained in the film-forming treatment liquid, thereby solidifying or curing the film-forming treatment liquid. You may perform the process removed from as a removal process. Note that the sublimation method here is only an example, and the sublimation substance itself, not the substrate, may be directly heated by gas or the like. The heat treatment may be omitted depending on the sublimation temperature of the sublimable substance.

(Fifth embodiment)
In the above-described embodiments, the case where the chemical processing is performed as the post-processing after the solidified or cured film forming processing liquid is removed from the wafer W has been described. However, the post treatment is not limited to the chemical solution treatment. In the fifth embodiment, an example in which a dry etching process is performed as a post-process will be described with reference to FIG. FIG. 16 is a diagram illustrating a schematic configuration of a second processing apparatus according to the fifth embodiment.

  As illustrated in FIG. 16, the second processing apparatus 3 </ b> C according to the fifth embodiment includes a plurality of removal units 720 and a plurality of dry etching units 800 in the processing station 8.

  The removal unit 720 has a configuration similar to that of the removal unit 710 according to the fourth embodiment, and removes the solidified or hardened film forming treatment liquid from the wafer W by sublimation. The removal unit 720 has the same configuration as that of the removal unit 700 according to the third embodiment, and removes the solidified or hardened film-forming treatment liquid from the wafer W with a removal liquid such as an alkaline developer. There may be.

  The dry etching unit 800 has the same configuration as that of the dry etching unit 12 according to the first embodiment, and the dry etching process is performed on the wafer W from which the film forming treatment liquid solidified or cured by the removing unit 720 is removed. I do. The wafer W after the dry etching process is accommodated in the carrier C by the second unloading process (step S110 in FIG. 8).

  In this way, the second processing apparatus 3C may perform a dry etching process as a post-process. That is, it is possible to add the above-described film-forming treatment liquid supply processing and removal processing to a process of performing dry etching processing in pre-processing and then further performing dry etching processing in post-processing.

  Examples of such a process include a process in which a hard mask etching for etching a hard mask is performed as a pre-processing, and then a main etching for etching a film to be processed on the wafer W is performed as a post-processing. By applying the above-described film-forming treatment liquid supply process and removal process to such a process, the growth of the reaction product P after the hard mask etching can be prevented, and the shape of the film to be processed during the main etching can be reduced. It can be stabilized.

  When the removal process is performed by sublimation described in the fourth embodiment, the removal process can be performed in the dry etching unit 800.

(Other embodiments)
In the above-described embodiment, an example in which a topcoat solution or a sublimable substance solution is used as the film-forming treatment liquid has been described. However, the film-forming treatment liquid is not limited thereto.

  For example, the film-forming treatment liquid may be a treatment liquid containing a phenol resin. Since such a phenol resin also causes curing shrinkage similarly to the above-described acrylic resin, it is effective in that a tensile force is applied to the reaction product P as in the case of the top coat liquid.

  An example of the film-forming treatment liquid containing a phenol resin is a resist liquid. The resist solution is a film-forming treatment solution for forming a resist film on the wafer W. Specifically, the resist solution contains a novolac type phenol resin.

  Note that when a resist solution is used as the film-forming treatment solution, a thinner that can dissolve the resist solution may be used as the removal solution. When thinner is used as the removal liquid, the rinsing process after the removal liquid supply process can be omitted. In the case where a resist solution is used as the film-forming treatment solution, the removal solution may be supplied after performing an exposure process such as an overall exposure on the resist film formed on the wafer W. In such a case, the remover may be a developer or a thinner.

  The synthetic resin contained in the film-forming treatment liquid may be any resin that cures and shrinks, and is not limited to the above acrylic resin or phenol resin. For example, the synthetic resin contained in the film-forming treatment liquid is epoxy resin, melanin resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, Tetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, nylon, polyacetal, polycarbonate, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, polyamide imide, etc. Good.

  Further, an antireflection film liquid may be used as the film-forming treatment liquid. The antireflection film liquid is a film forming treatment liquid for forming an antireflection film on the wafer W. The antireflection film is a protective film for reducing the surface reflection of the wafer W and increasing the transmittance. When such an antireflection film liquid is used as a film-forming treatment liquid, DIW that can dissolve the antireflection film liquid can be used as a removal liquid.

  In addition to the volatile component and the synthetic resin, the film-forming treatment liquid may further include a predetermined chemical solution that dissolves the wafer W, the material formed on the wafer W, or foreign matter adhering to the wafer W. The “material configured on the wafer W” is, for example, the Cu wiring 102, and the “foreign matter adhering to the wafer W” is, for example, the reaction product P. Examples of the “predetermined chemical solution” include hydrogen fluoride, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide solution, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, an organic acid or an aqueous solution containing ammonium fluoride. is there. Since the surface of the reaction product P is dissolved by these chemical solutions, the adhesion of the reaction product P is weakened, so that the reaction product P can be easily removed.

  The “predetermined chemical solution” is used under the condition that the etching amount is small as compared with the chemical solution in the normal chemical cleaning in which cleaning is performed using only the chemical action of the chemical solution. For this reason, it is possible to remove the reaction product P more effectively while suppressing the erosion to the wafer W as compared with general chemical cleaning.

  In the above-described embodiment, an example in which an alkali developer is used as the removing liquid has been described. However, the removing liquid may be a solution obtained by adding hydrogen peroxide to an alkali developer. As described above, the surface roughness of the wafer W due to the alkali developer can be suppressed by adding the hydrogen peroxide solution to the alkali developer.

  The removal solution may be an organic solvent such as thinner, toluene, acetate esters, alcohols, glycols (propylene glycol monomethyl ether), or an acid developer such as acetic acid, formic acid, hydroxyacetic acid, etc. Also good.

  Furthermore, the removal liquid may further contain a surfactant. Since the surfactant has a function of weakening the surface tension, reattachment of the reaction product P to the wafer W can be suppressed.

  In the above-described embodiment, an example in which the metal wiring provided in the wafer W is the Cu wiring 102 has been described. However, the metal wiring is not limited to the Cu wiring 102. In such a case, the topcoat film removal solution may contain an anticorrosive agent according to the type of metal wiring.

  In the above-described embodiment, an example in which the target material for dry etching is a metal wiring has been described. However, the target material and structure for dry etching are not limited to metal wiring. The substrate processing method according to the first embodiment can also be applied to the removal of reaction products after the resist is removed by ashing. For example, it is effective for cleaning a wafer after ion implantation using a resist pattern as a mask and removing the resist by ashing.

  Further, in the above-described embodiment, an example in the case where the chemical processing is performed before the film formation processing liquid supply processing and after the removal liquid supply processing is shown, but the chemical processing is performed before the film formation processing liquid supply processing or Only one after the removal liquid supply process may be performed. Moreover, it is not always necessary to execute the chemical treatment.

  In addition, when performing a chemical | medical solution process after a removal liquid supply process, the liquid supply part 40_1 with which the 1st liquid processing unit 14 is provided may be provided in the 2nd liquid processing unit 19, or the processing unit for performing a chemical | medical solution washing | cleaning. May be provided separately.

  Further, the configuration of the substrate processing system 1 is not limited to the configuration exemplified in the above-described embodiment.

  For example, the configuration of the liquid supply unit 80 included in the second liquid processing unit 19 may be provided for another film forming unit that performs the film forming process on the wafer W that has been processed up to step S107 in FIG. . That is, the top coat film may be removed in the other film forming unit. Alternatively, a film forming unit may be provided in the processing station 8 of the second processing apparatus 3, or a film forming process may be performed in the second liquid processing unit 19. Thereby, since the film forming process can be performed immediately after the top coat film is removed, the Q-time management can be further facilitated.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

W wafer P reaction product 1 substrate processing system 2 first processing device 3 second processing device 4 control device 12 dry etching unit 13 load lock chamber 14 first liquid processing unit 19 second liquid processing units 40_1, 40_2, 80 liquid supply Part 101 Wiring layer 102 Cu wiring 103 Liner film 104 Interlayer insulating film 106 Via hole

Claims (12)

A processing liquid supply step for supplying a processing liquid for forming a film on the substrate containing a volatile component to a substrate after dry etching or ashing in which at least a part of the metal wiring formed therein is exposed;
A substrate processing method comprising: storing a substrate in which the processing liquid is solidified or hardened by volatilization of the volatile component in a transport container. An extraction step of taking out the substrate after the treatment liquid supply step accommodated in the transfer container;
The substrate processing method according to claim 1, further comprising: a removing step of removing the solidified or hardened processing solution from the substrate after the extracting step. The removal step includes
The substrate processing according to claim 2, wherein the solidified or hardened processing liquid is removed from the substrate by supplying a removing liquid that removes the processing liquid to the solidified or hardened processing liquid. Method. The substrate processing method according to claim 3, wherein the removing liquid contains an anticorrosive for the metal wiring. The treatment liquid is
A solution of a sublimable substance,
The removing step includes
The substrate processing method according to claim 2, wherein the solidified or cured processing liquid is sublimated and removed from the substrate. The substrate processing method according to claim 2, further comprising a post-processing step of performing wet cleaning or dry etching on the substrate after the removing step. A dry etching step of performing dry etching on the substrate before the treatment liquid supply step to expose at least a part of the metal wiring formed inside the substrate;
The substrate processing method according to claim 1, further comprising: an outside air blocking step for blocking the substrate from outside air after the dry etching step until the processing liquid supply step is started. . The other surface processing process of processing the other surface of the said board | substrate in the state in which the main surface of the said board | substrate was entirely covered with the said solidified or hardened | cured processing liquid, The any one of Claims 1-7 characterized by the above-mentioned. The substrate processing method as described in one. A placement unit for placing a transport container capable of accommodating a plurality of substrates; and
A processing liquid supply unit that supplies a processing liquid for forming a film on the substrate containing a volatile component to a substrate after dry etching or ashing in which at least a part of the metal wiring formed therein is exposed;
A substrate transport apparatus that transports the substrate, on which the processing liquid is solidified or hardened by volatilization of the volatile component, to the placement unit, and stores the substrate in the transport container placed on the placement unit. A featured substrate processing system. A dry etching portion that performs dry etching on the substrate and exposes at least part of the metal wiring formed in the substrate;
A first block including the placement unit, the substrate transfer device, and the dry etching unit;
A second block including the processing liquid supply unit;
The substrate processing system according to claim 9, further comprising: an internal space that is shielded from the atmosphere, and a connecting portion that connects the first block and the second block. The substrate processing system according to claim 9, further comprising a dry etching unit that etches the substrate with an etching gas. A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate processing system,
A storage medium characterized in that, when executed, the program causes a computer to control the substrate processing system so that the substrate processing method according to claim 1 is performed.

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