JP2008066727A5 - - Google Patents

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Publication number
JP2008066727A5
JP2008066727A5 JP2007228555A JP2007228555A JP2008066727A5 JP 2008066727 A5 JP2008066727 A5 JP 2008066727A5 JP 2007228555 A JP2007228555 A JP 2007228555A JP 2007228555 A JP2007228555 A JP 2007228555A JP 2008066727 A5 JP2008066727 A5 JP 2008066727A5
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JP
Japan
Prior art keywords
contact area
conductive layer
holes
light emitting
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007228555A
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English (en)
Japanese (ja)
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JP2008066727A (ja
Filing date
Publication date
Priority claimed from US11/516,333 external-priority patent/US7714340B2/en
Application filed filed Critical
Publication of JP2008066727A publication Critical patent/JP2008066727A/ja
Publication of JP2008066727A5 publication Critical patent/JP2008066727A5/ja
Pending legal-status Critical Current

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JP2007228555A 2006-09-06 2007-09-04 改良された窒化物発光素子、及びその製造方法 Pending JP2008066727A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/516,333 US7714340B2 (en) 2006-09-06 2006-09-06 Nitride light-emitting device

Publications (2)

Publication Number Publication Date
JP2008066727A JP2008066727A (ja) 2008-03-21
JP2008066727A5 true JP2008066727A5 (enExample) 2010-12-24

Family

ID=39289102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007228555A Pending JP2008066727A (ja) 2006-09-06 2007-09-04 改良された窒化物発光素子、及びその製造方法

Country Status (2)

Country Link
US (2) US7714340B2 (enExample)
JP (1) JP2008066727A (enExample)

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US7749782B1 (en) 2008-12-17 2010-07-06 Palo Alto Research Center Incorporated Laser roughening to improve LED emissions
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US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
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US8723201B2 (en) 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
JP5715686B2 (ja) * 2011-03-23 2015-05-13 創光科学株式会社 窒化物半導体紫外線発光素子
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US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
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CN107658373B (zh) * 2012-03-28 2020-01-21 晶元光电股份有限公司 发光二极管结构与其制造方法
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US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
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JP6711588B2 (ja) * 2015-10-29 2020-06-17 旭化成株式会社 窒化物半導体発光素子及び窒化物半導体発光装置
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