JP2008066727A - 改良された窒化物発光素子、及びその製造方法 - Google Patents

改良された窒化物発光素子、及びその製造方法 Download PDF

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Publication number
JP2008066727A
JP2008066727A JP2007228555A JP2007228555A JP2008066727A JP 2008066727 A JP2008066727 A JP 2008066727A JP 2007228555 A JP2007228555 A JP 2007228555A JP 2007228555 A JP2007228555 A JP 2007228555A JP 2008066727 A JP2008066727 A JP 2008066727A
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layer
light emitting
contact area
contact
conductive layer
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Pending
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Japanese (ja)
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JP2008066727A5 (enExample
Inventor
Christopher L Chua
エル． チュア クリストファー
Yan Chihon
ヤン チホン
Noble M Johnson
エム． ジョンソン ノーブル
Mark R Teepe
アール． ティープ マーク
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Palo Alto Research Center Inc
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Palo Alto Research Center Inc
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Publication of JP2008066727A publication Critical patent/JP2008066727A/ja
Publication of JP2008066727A5 publication Critical patent/JP2008066727A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
JP2007228555A 2006-09-06 2007-09-04 改良された窒化物発光素子、及びその製造方法 Pending JP2008066727A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/516,333 US7714340B2 (en) 2006-09-06 2006-09-06 Nitride light-emitting device

Publications (2)

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JP2008066727A true JP2008066727A (ja) 2008-03-21
JP2008066727A5 JP2008066727A5 (enExample) 2010-12-24

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US (2) US7714340B2 (enExample)
JP (1) JP2008066727A (enExample)

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JP2009238932A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
WO2012127660A1 (ja) * 2011-03-23 2012-09-27 創光科学株式会社 窒化物半導体紫外線発光素子
JP2014063862A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法
CN105423234A (zh) * 2014-09-11 2016-03-23 首尔伟傲世有限公司 面光源紫外线发光二极管灯及其制造方法
JP2017085010A (ja) * 2015-10-29 2017-05-18 旭化成株式会社 窒化物半導体発光素子及び窒化物半導体発光装置
US10396244B2 (en) 2014-01-21 2019-08-27 Soko Kagaku Co., Ltd. Nitride semiconductor light emitting element

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US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2007123735A1 (en) * 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US7872272B2 (en) * 2006-09-06 2011-01-18 Palo Alto Research Center Incorporated Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact
WO2008088838A1 (en) * 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
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US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US8124993B2 (en) * 2008-12-17 2012-02-28 Palo Alto Research Center Incorporated Selective decomposition of nitride semiconductors to enhance LED light extraction
US7749782B1 (en) 2008-12-17 2010-07-06 Palo Alto Research Center Incorporated Laser roughening to improve LED emissions
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US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
WO2011046244A1 (ko) * 2009-10-16 2011-04-21 서울대학교산학협력단 Ⅲ족 질화물 표면 격자 반사체
US9435493B2 (en) * 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
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US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
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US8723201B2 (en) 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
WO2012144046A1 (ja) 2011-04-21 2012-10-26 創光科学株式会社 窒化物半導体紫外線発光素子
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
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CN103367592B (zh) * 2012-03-28 2017-12-01 晶元光电股份有限公司 发光二极管结构与其制造方法
US9159677B2 (en) * 2012-08-21 2015-10-13 Micron Technology, Inc. Methods of forming semiconductor device structures
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CN105144345B (zh) 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
CN105848574B9 (zh) 2013-11-22 2020-01-21 萨鲁达医疗有限公司 用于检测神经测量值中的神经反应的方法和装置
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TWI693708B (zh) * 2018-08-15 2020-05-11 英屬開曼群島商錼創科技股份有限公司 透明顯示面板
CN110838504B (zh) * 2018-08-15 2023-09-12 英属开曼群岛商镎创科技股份有限公司 透明显示面板
CN111799654B (zh) * 2020-09-09 2021-01-22 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法与应用

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Cited By (11)

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Publication number Priority date Publication date Assignee Title
JP2009238932A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
WO2012127660A1 (ja) * 2011-03-23 2012-09-27 創光科学株式会社 窒化物半導体紫外線発光素子
JP5715686B2 (ja) * 2011-03-23 2015-05-13 創光科学株式会社 窒化物半導体紫外線発光素子
JP2014063862A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法
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US9331235B2 (en) 2012-09-20 2016-05-03 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US10396244B2 (en) 2014-01-21 2019-08-27 Soko Kagaku Co., Ltd. Nitride semiconductor light emitting element
CN105423234A (zh) * 2014-09-11 2016-03-23 首尔伟傲世有限公司 面光源紫外线发光二极管灯及其制造方法
CN107606583A (zh) * 2014-09-11 2018-01-19 首尔伟傲世有限公司 面光源紫外线发光二极管灯及其制造方法
CN107606583B (zh) * 2014-09-11 2019-06-28 首尔伟傲世有限公司 面光源紫外线发光二极管灯及其制造方法
JP2017085010A (ja) * 2015-10-29 2017-05-18 旭化成株式会社 窒化物半導体発光素子及び窒化物半導体発光装置

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US20080144688A1 (en) 2008-06-19
US7812421B2 (en) 2010-10-12
US20080123711A1 (en) 2008-05-29
US7714340B2 (en) 2010-05-11

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