JP2008066679A - 固体撮像装置及びその製造方法 - Google Patents

固体撮像装置及びその製造方法 Download PDF

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JP2008066679A
JP2008066679A JP2006246170A JP2006246170A JP2008066679A JP 2008066679 A JP2008066679 A JP 2008066679A JP 2006246170 A JP2006246170 A JP 2006246170A JP 2006246170 A JP2006246170 A JP 2006246170A JP 2008066679 A JP2008066679 A JP 2008066679A
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Japan
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transparent
solid
state imaging
imaging device
sog material
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JP2006246170A
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English (en)
Japanese (ja)
Inventor
Manabu Bonshihara
學 盆子原
Kazutoshi Kamibayashi
和利 上林
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Priority to JP2006246170A priority Critical patent/JP2008066679A/ja
Priority to PCT/JP2007/067658 priority patent/WO2008032706A1/fr
Priority to TW096133831A priority patent/TW200821636A/zh
Publication of JP2008066679A publication Critical patent/JP2008066679A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05024—Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05025—Disposition the internal layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2006246170A 2006-09-11 2006-09-11 固体撮像装置及びその製造方法 Pending JP2008066679A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006246170A JP2008066679A (ja) 2006-09-11 2006-09-11 固体撮像装置及びその製造方法
PCT/JP2007/067658 WO2008032706A1 (fr) 2006-09-11 2007-09-11 Dispositif d'imagerie à semi-conducteurs et son procédé de production
TW096133831A TW200821636A (en) 2006-09-11 2007-09-11 Solid-state image pickup device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006246170A JP2008066679A (ja) 2006-09-11 2006-09-11 固体撮像装置及びその製造方法

Publications (1)

Publication Number Publication Date
JP2008066679A true JP2008066679A (ja) 2008-03-21

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ID=39183763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006246170A Pending JP2008066679A (ja) 2006-09-11 2006-09-11 固体撮像装置及びその製造方法

Country Status (3)

Country Link
JP (1) JP2008066679A (fr)
TW (1) TW200821636A (fr)
WO (1) WO2008032706A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040621A (ja) * 2008-08-01 2010-02-18 Toshiba Corp 固体撮像デバイス及びその製造方法
WO2010082464A1 (fr) * 2009-01-19 2010-07-22 パナソニック株式会社 Dispositif semi-conducteur et son procédé de fabrication
JP2010199589A (ja) * 2009-02-24 2010-09-09 Taiwan Semiconductor Manufacturing Co Ltd イメージセンサー装置および半導体イメージセンサー装置の製造方法
EP2251715A1 (fr) 2009-05-14 2010-11-17 Sony Corporation Dispositif de capture d'image à l'état solide, son procédé de fabrication et appareil électronique
JP2010268099A (ja) * 2009-05-13 2010-11-25 Honda Motor Co Ltd 車両用撮像装置および車両周辺監視装置
JP2013033225A (ja) * 2011-06-30 2013-02-14 Canon Inc 撮像装置及び画像形成装置
US9041161B2 (en) 2012-08-28 2015-05-26 Sony Corporation Semiconductor device with a chip prevention member
JP2020077855A (ja) * 2018-09-25 2020-05-21 精材科技股▲ふん▼有限公司 チップパッケージおよびその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968460B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Semiconductor with through-substrate interconnect
JP2010010232A (ja) * 2008-06-25 2010-01-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US9799562B2 (en) 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US8907457B2 (en) 2010-02-08 2014-12-09 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282846A (ja) * 2002-03-20 2003-10-03 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2004063765A (ja) * 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像装置およびその製造方法
JP2004079608A (ja) * 2002-08-12 2004-03-11 Sanyo Electric Co Ltd 固体撮像装置および固体撮像装置の製造方法
KR100922669B1 (ko) * 2005-01-04 2009-10-19 가부시키가이샤 아이스퀘어리서치 고체촬상장치 및 그 제조방법

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040621A (ja) * 2008-08-01 2010-02-18 Toshiba Corp 固体撮像デバイス及びその製造方法
WO2010082464A1 (fr) * 2009-01-19 2010-07-22 パナソニック株式会社 Dispositif semi-conducteur et son procédé de fabrication
JP2010166004A (ja) * 2009-01-19 2010-07-29 Panasonic Corp 半導体装置及びその製造方法
JP2010199589A (ja) * 2009-02-24 2010-09-09 Taiwan Semiconductor Manufacturing Co Ltd イメージセンサー装置および半導体イメージセンサー装置の製造方法
JP2010268099A (ja) * 2009-05-13 2010-11-25 Honda Motor Co Ltd 車両用撮像装置および車両周辺監視装置
US8355072B2 (en) 2009-05-14 2013-01-15 Sony Corporation Solid-state image capture device, manufacturing method therefor, and electronic apparatus
EP2251715A1 (fr) 2009-05-14 2010-11-17 Sony Corporation Dispositif de capture d'image à l'état solide, son procédé de fabrication et appareil électronique
EP2662710A1 (fr) 2009-05-14 2013-11-13 Sony Corporation Dispositif de capture d'image à l'état solide et son procédé de fabrication
US8902348B2 (en) 2009-05-14 2014-12-02 Sony Corporation Solid-state image capture device, manufacturing method therefor, and electronic apparatus
JP2013033225A (ja) * 2011-06-30 2013-02-14 Canon Inc 撮像装置及び画像形成装置
US9426338B2 (en) 2011-06-30 2016-08-23 Canon Kabushiki Kaisha Imaging apparatus and image forming apparatus having continuous pores in three dimensions in porous body
US9041161B2 (en) 2012-08-28 2015-05-26 Sony Corporation Semiconductor device with a chip prevention member
JP2020077855A (ja) * 2018-09-25 2020-05-21 精材科技股▲ふん▼有限公司 チップパッケージおよびその製造方法
US11450697B2 (en) 2018-09-25 2022-09-20 Xintec Inc. Chip package with substrate having first opening surrounded by second opening and method for forming the same

Also Published As

Publication number Publication date
TW200821636A (en) 2008-05-16
WO2008032706A1 (fr) 2008-03-20

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