JP2008066679A - Solid-state imaging apparatus, and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus and a manufacturing method thereof, which prevent difficulty due to a material arranged between a transparent cover and imaging planes, and also facilitate arrangement work of the material and adhesion work of the transparent cover. <P>SOLUTION: A glass cover (the transparent cover) 60 is formed in such a way that it covers whole surfaces of the imaging planes 25 with a gap between the imaging planes 25 of imaging elements 10. An inorganic or inorganic/organic hybrid transparent SOG (Spin-On-Glass) material film (for example, a transparent nanoporous SOG material film 50) is arranged in the gap. The glass cover 60 is laminated to this transparent SOG material film. For example, a transparent amorphous silica film or a transparent amorphous silicate film each of which includes nanopores or no nanopores, or a transparent inorganic/organic hybrid material film which includes nanopores or no nanopores, is employed as the transparent SOG material film. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device in which a solid-state imaging device is mounted on a chip size package (CSP) and a manufacturing method thereof, and more specifically, includes a chip-shaped solid-state imaging device and a transparent cover that covers the imaging surface, A transparent SOG (Spin-On-Glass) material film is disposed in a gap between the imaging surface and the transparent cover, and the gap is filled with the SOG material film, or a cavity is formed in the gap. The present invention relates to a solid-state imaging device and a manufacturing method thereof.

  In recent years, solid-state imaging devices have been further miniaturized and enhanced in functionality, but along with this, they are increasingly being installed in portable devices such as mobile phones and portable computers, as well as automobiles, etc. It is spreading more and more.

  Some solid-state imaging devices (bare chips) used in solid-state imaging devices include microlenses (microlens arrays) formed in an array corresponding to each pixel. When such a solid-state imaging device is mounted on a CSP, a transparent cover (usually a glass cover) that covers the entire surface of the microlens array is provided in the package. The configuration includes a space between the microlens array and the transparent cover. In other words, there is a space between the microlens array and the transparent cover, and a resin material is disposed (filled) between the microlens array and the transparent cover. In some cases, there is no cavity between the Micron's array and the transparent cover. The cavity is filled with air, nitrogen gas, or the like as necessary, or a predetermined level of vacuum is created.

  An example of the above-described solid-state imaging device having a cavity is disclosed in Japanese Patent Application Laid-Open No. 2003-163341. In this solid-state imaging device, a flat plate portion made of glass or the like is superimposed on a solid-state imaging device (chip), and a bump provided on the solid-state imaging device is electrically connected to a metal wiring formed on the flat plate portion. By sealing the connection portion with a sealant, a solid-state imaging device including an airtight sealing portion (cavity) is configured. This solid-state imaging device is mounted on a package (for example, a ceramic package) having a positioning reference surface after positioning. As a measure for preventing damage due to the difference in thermal expansion coefficient, a stress buffer layer is inserted between the metal wiring on the flat plate portion and the bump on the solid-state imaging device (summary, FIGS. 1 to 7, paragraph 0021). ~ 0042).

  Examples of the above-described solid-state imaging device having no cavity are described in Non-Patent Document 1 (“Nikkei Electronics”, November 21, 2005, “Improved value with alternative package regardless of wire connection”, pages 105 to 109) and It is disclosed in Patent Document 2 (Japanese Patent Laid-Open No. 2001-118967).

  A solid-state imaging device (manufactured by Sanyo Electric Co., Ltd.) described in Non-Patent Document 1 is filled with a transparent resin in a gap between a solid-state imaging device (chip) and a glass cover, and solid imaging is performed by the transparent resin. The stress caused by the difference in thermal expansion coefficient from silicon constituting the element is prevented. In addition, a glass cover having a small difference in thermal expansion coefficient from silicon constituting the solid-state imaging device is used (see FIG. 3, page 109).

In the solid-state imaging device of Patent Document 2, a solid-state imaging device (chip) is accommodated in a concave portion of a housing (package), and the concave portion is filled with a transparent resin, thereby absorbing short wavelength light in the ultraviolet region and A resin layer that transmits visible light is formed. Thus, the color filter formed on the surface of the solid-state image sensor is protected. Further, a glass plate is attached so as to cover the resin layer to protect the surface of the resin layer (see summary, FIGS. 1 to 3 and paragraphs 0010 to 0020).
JP 2003-163341 A (Abstract, FIGS. 1-7, paragraphs 0021-0042) JP 2001-118967 A (summary, FIGS. 1 to 3, paragraphs 0010 to 0020) "Nikkei Electronics" November 21, 2005 (pages 105-109)

  The above-described solid-state imaging device having a cavity is preferable because it eliminates the problem of refractive index, but the package (cavity) including the transparent cover needs to be hermetically sealed. There is a problem that it may be lowered. In consideration of this point, one having no air gap is preferable.

  However, the above-described solid-state imaging device having no cavity does not require hermetic sealing, but care must be taken in selecting a material (hereinafter also referred to as an intermediate material) disposed between the transparent cover and the microlens array. It is. For example, it is necessary to reduce the refractive index of the intermediate material as close as possible to the refractive index of air (n = 1). In addition, in order to suppress the damage caused by the difference in thermal expansion coefficient between the intermediate material and the silicon constituting the solid-state imaging device and the transparent cover (usually a glass cover), the thermal expansion coefficient of the intermediate material or the intermediate material and the transparent cover Adhesion with the other must be considered. The same applies to the method for forming (filling) the intermediate material and the method for bonding the transparent cover and the intermediate material.

  As an intermediate material, an organic material (for example, epoxy resin) has been conventionally used. However, since the organic material has high hygroscopicity, the internal solid-state imaging device is easily affected by moisture, and has a large coefficient of thermal expansion. There are difficulties such as easy peeling due to expansion and contraction. Therefore, although it is desired that the intermediate material is an inorganic material, it is not easy to find one that satisfies all of the above requirements.

  The solid-state imaging device disclosed in Patent Document 1 has a cavity, and Patent Document 1 neither describes nor suggests the intermediate material.

  In the solid-state imaging device disclosed in Non-Patent Document 1, a synthetic resin is used as the intermediate material, and no inorganic material is used. Non-Patent Document 1 does not describe or suggest any use of inorganic materials.

  In the solid-state imaging device disclosed in Patent Document 2, a resin that absorbs light having a short wavelength in the ultraviolet region and transmits visible light is used as the intermediate material. And as a specific example of the said resin, Kyoritsu Sangyo Co., Ltd. acrylic transparent resin (product number: XLV-14SG2) is mentioned. Patent Document 2 also does not disclose or suggest any use of inorganic materials.

  The above-described problems relating to the intermediate material also exist in the solid-state imaging device using the solid-state imaging device that does not have the Micron's array. In this type of solid-state imaging device, the intermediate material is disposed in the gap between the flat imaging surface of the solid-state imaging device and the transparent cover. In this case, however, the intermediate material has a refractive index, a thermal expansion coefficient, and a transparent cover. There are similar problems with respect to adhesiveness, intermediate material formation (filling), and adhesion to a transparent cover.

  Further, the above-described problems regarding the intermediate material also exist in the solid-state imaging device having the cavity. That is, in this type of solid-state imaging device, the cavity defined by the intermediate material is required to be airtight, and therefore, the adhesiveness and airtightness of the intermediate material with the transparent cover, the intermediate material forming method, There are similar problems regarding the patterning method and the adhesion method with the transparent cover.

  The present invention has been made in consideration of these points, and an object of the present invention is to make it difficult (for example, to absorb moisture) due to an intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device. A solid-state imaging device having no cavity, and a method of manufacturing the solid-state imaging device, in which the intermediate material and the transparent cover can be easily joined. is there.

  Another object of the present invention is to prevent difficulties (for example, hygroscopicity and coefficient of thermal expansion) caused by the intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device, and to prevent the intermediate material from being transparent. Provided is a solid-state imaging device having the cavity, which has good adhesion to the cover and hermetic sealing, and is easy to dispose and pattern the intermediate material and to join the transparent cover, and a method for manufacturing the same. There is to do.

  Other objects of the present invention which are not specified here will become apparent from the following description and the accompanying drawings.

(1) In a first aspect of the present invention, a solid-state imaging device having no cavity is provided. This solid-state imaging device
A solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
A solid-state imaging device having an imaging surface;
A transparent cover formed so as to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device;
An inorganic or inorganic / organic hybrid transparent SOG material film covering the entire surface of the imaging surface disposed in the gap;
The transparent cover is bonded to the transparent SOG material film directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid.

  (2) As described above, the solid-state imaging device according to the first aspect of the present invention is an inorganic or inorganic / organic covering the entire surface of the imaging surface in the gap between the imaging surface of the solid-state imaging device and the transparent cover. A hybrid transparent SOG material film is arranged. That is, the material (intermediate material) disposed in the gap between the imaging surface and the transparent cover is a non-organic transparent SOG material film. For this reason, difficulties caused by the intermediate material being an organic material, for example, because the hygroscopic property is high, the internal solid-state imaging device is easily affected by moisture, the thermal expansion coefficient is large, and it is easy to peel off due to expansion / contraction, etc. Can prevent the difficulty.

  Further, since the transparent SOG material film is a film of an inorganic or inorganic / organic hybrid spin-on-glass material, a transparent SOG material for forming the transparent SOG material film is publicly known. It is possible to apply so as to cover the whole surface of the imaging surface of the solid-state imaging device by a spin coating method or a spray coating method, and an extremely flat surface (for example, a surface having a swell of 0.1 μm or less) is easy. Is obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface. This is because the transparent SOG material that forms the transparent SOG material film has fluidity, so that the microlens array can be easily embedded with the transparent SOG material film during application. Thereafter, when the transparent SOG material thus applied is cured by heating or the like, the transparent SOG material film covering the entire surface of the imaging surface can be obtained. Therefore, the formation of the transparent SOG material film, in other words, the arrangement of the intermediate material is easy.

  Further, since the surface of the transparent SOG material film is extremely flat, the transparent cover is directly attached to the transparent SOG material film (the intermediate material) or via another transparent SOG material film of an inorganic or inorganic / organic hybrid. Can be easily joined.

  The refractive index n of the transparent SOG material film of inorganic type or inorganic / organic hybrid is usually about n = 1.4 to 1.3, and there is no problem in terms of refractive index. Further, for example, by including fine (nanoscale) bubbles in the transparent SOG material film, in other words, by forming a nanoporous film, it is also possible to reduce to n = 1.2. Thus, the influence caused by the refractive index of the transparent SOG material film can be minimized.

(3) In a preferred example of the solid-state imaging device according to the first aspect of the present invention, the transparent SOG material film is inorganic, and is a transparent amorphous silica (SiO ₂ ) film (silica glass film) or transparent. An amorphous silicate film (silicate glass film) is used.

  In still another preferred example of the solid-state imaging device according to the first aspect of the present invention, the transparent SOG material film is inorganic and includes a plurality of fine bubbles (nanopores). In other words, the transparent SOG material film is an inorganic porous film. Here, the “fine bubbles” mean bubbles (nanopores) of the nanometer (nm) class. Therefore, it can be said that the transparent SOG material film is an inorganic nano-porous film. In this example, there is an advantage that the refractive index of the transparent SOG material film can be further lowered to approach the refractive index of air (n = 1). For example, when nanopores are not included, n is about 1.4, but this can be reduced to about n = 1.2 by generating nanopores.

The size of the nanopore is preferably, for example, in the range of 10 nm to 10 ⁴ nm, but needs to be smaller than the wavelength of light that can be imaged by the solid-state imaging device. This is because if the nanopore is larger than or equal to the wavelength of light that can be imaged, the incident light may be reflected by the nanopore portion. If the solid-state imaging device is for visible light, the nanopore size is preferably 380 nm or less, and if the solid-state imaging device is for infrared light, the nanopore size is preferably 3000 nm or less. .

  Examples of the inorganic porous film that can be used in this example include the above-described transparent amorphous silica film (silica glass film) and transparent amorphous silicate film (silicate glass film). However, it is not limited to these.

In still another preferable example of the solid-state imaging device according to the first aspect of the present invention, the transparent SOG material film is an inorganic / organic hybrid having a silica bond (Si—O—Si) as a main chain, It is a transparent film formed from a polysiloxane material formed by bonding organic components having carbon. Alternatively, an inorganic / organic hybrid amorphous silica film embedded with fullerene (for example, C ₆₀ ) or carbon nanotubes can also be used.

  In still another preferred example of the solid-state imaging device according to the first aspect of the present invention, the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material film is In addition, it is an inorganic and transparent amorphous silica film or a transparent amorphous silicate film.

(4) In a second aspect of the present invention, a method for manufacturing a solid-state imaging device having no cavity is provided. The manufacturing method of this solid-state imaging device is:
A method for manufacturing a solid-state imaging device, wherein a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
Preparing a solid-state imaging device having an imaging surface;
Forming an inorganic or inorganic / organic hybrid transparent SOG material film so as to cover the entire surface of the imaging surface;
And a step of bonding a transparent cover so as to cover the entire surface of the imaging surface directly on the surface of the transparent SOG material film or via another transparent SOG material film of an inorganic or inorganic / organic hybrid. It is characterized by.

  (5) In the solid-state imaging device manufacturing method according to the second aspect of the present invention, as described above, an inorganic or inorganic / organic hybrid transparent SOG material film is formed so as to cover the entire imaging surface of the solid-state imaging device. Then, a transparent cover is bonded on the surface of the transparent SOG material film directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid so as to cover the entire surface of the imaging surface. For this reason, the solid-state imaging device according to the first aspect of the present invention can be manufactured.

  In addition, since the material (intermediate material) disposed between the transparent cover and the imaging surface is a non-organic transparent SOG material film, the above-described difficulty caused by the intermediate material being an organic material. Can be prevented.

  Further, since the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film, the transparent SOG material for forming the transparent SOG material film may be formed by a known spin coating method or spray coating. It is possible to apply so as to cover the entire surface of the imaging surface of the solid-state imaging device by a method, and an extremely flat surface (for example, a surface having a wave of 0.1 μm or less) can be easily obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface. This is because the transparent SOG material that forms the transparent SOG material film has fluidity, so that the microlens array can be easily embedded with the transparent SOG material film during application. Thereafter, when the transparent SOG material thus applied is cured by heating or the like, the transparent SOG material film covering the entire surface of the imaging surface can be obtained. Therefore, the formation of the transparent SOG material film, in other words, the arrangement of the intermediate material is easy.

  Since the surface of the transparent SOG material film is extremely flat, the bonding process of the transparent cover to the transparent SOG material film or the other transparent SOG material film (the intermediate material) can be easily performed.

(6) In a preferable example of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention, the step of forming the transparent SOG material film includes a polymer of a silazane compound having a Si—N (silicon-nitrogen) bond (polysilazane). , Polysilazane) and forming a film of perhydropolysilazane (perhydrosilazane) in which all side chains are hydrogen (H), and transparent amorphous silica (SiO ₂ ) by firing the film of perhydropolysilazane. Forming a film (silica glass film).

  In another preferable example of the method of manufacturing the solid-state imaging device according to the second aspect of the present invention, the step of forming the transparent SOG material film includes Si—O (silicon-oxygen) bond and Si—OH (silicon-hydroxyl group). The method includes a step of forming a silicate polymer film having a bond, and a step of forming a transparent amorphous silicate film by firing the silicate polymer film.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention, an inorganic transparent SOG material film (inorganic transparent porous SOG material film) including a plurality of nanopores as the transparent SOG material film. Is used. Here, the meaning of “nanopore” and its preferred size are the same as those described above in (3) for the solid-state imaging device according to the first aspect of the present invention.

In still another preferred example of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention, the transparent SOG material film is an inorganic / organic hybrid, and a silica bond (Si—O—Si) is used as the main chain. A transparent film made of a polysiloxane material having an organic component having carbon bonded thereto is used. Alternatively, an inorganic / organic hybrid silica glass film embedded with fullerene (for example, C ₆₀ ) or carbon nanotubes can also be used.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention, the transparent cover is bonded to the surface of the transparent SOG material film via another transparent SOG material film, and the other As the transparent SOG material film, an inorganic, transparent amorphous silica film or transparent amorphous silicate film is used.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the second aspect of the present invention, the bonding operation of the transparent cover to the transparent inorganic SOG material film (intermediate material) is an anode using oxygen plasma in combination. Done by joining.

(7) In a third aspect of the present invention, a solid-state imaging device having a cavity is provided. This solid-state imaging device
A solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
A solid-state imaging device having an imaging surface;
A transparent cover formed so as to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device;
An inorganic or inorganic / organic hybrid transparent SOG material film arranged to surround the imaging surface, disposed in the gap,
The transparent cover is bonded to the transparent SOG material film directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid,
The transparent SOG material film is characterized in that a cavity is formed between the transparent cover and the imaging surface.

  (8) As described above, the solid-state imaging device according to the third aspect of the present invention is an inorganic system patterned so as to surround the imaging surface in the gap between the imaging surface of the solid-state imaging device and the transparent cover. Alternatively, an inorganic / organic hybrid transparent SOG material film is disposed. That is, the material (intermediate material) disposed in the gap between the imaging surface and the transparent cover is a non-organic transparent SOG material film. For this reason, difficulties caused by the intermediate material being an organic material, for example, because the hygroscopic property is high, the internal solid-state imaging device is easily affected by moisture, the thermal expansion coefficient is large, and it is easy to peel off due to expansion / contraction, etc. Can prevent the difficulty.

  Further, since the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film, the transparent SOG material forming the transparent SOG material film can be obtained by using a known spin coating method or spray coating. It is possible to apply so as to cover the entire surface of the imaging surface of the solid-state imaging device by a method, and an extremely flat surface (for example, a surface having a wave of 0.1 μm or less) can be easily obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface. Thereafter, the transparent SOG material thus applied is cured by heating or the like, and then patterned so as to form the cavity, whereby the transparent SOG material film is obtained. Therefore, it is easy to form the transparent SOG material film, in other words, to arrange and pattern the intermediate material.

  Further, since the surface of the transparent SOG material film is extremely flat, the process of joining the transparent cover to the transparent SOG material film (the intermediate material) can be easily performed, and the transparent SOG material film is preferably selected. By doing so, good adhesiveness with the transparent cover and good hermetic sealing properties can be easily obtained.

  Since the transparent SOG material film forms a cavity between the transparent cover and the imaging surface, the transparent SOG material film does not exist on the imaging surface in the cavity. Therefore, there is no problem caused by the refractive index of the transparent SOG material film.

(9) In a preferred example of the solid-state imaging device according to the third aspect of the present invention, the transparent SOG material film is inorganic, and is a transparent amorphous silica (SiO ₂ ) film (silica glass film) or transparent. An amorphous silicate film (silicate glass film) is used.

  As described in (3) above, the transparent SOG material film may be inorganic and may include a plurality of fine bubbles (nanopores).

In still another preferable example of the solid-state imaging device according to the third aspect of the present invention, the transparent SOG material film is an inorganic / organic hybrid having a silica bond (Si—O—Si) as a main chain, It is a transparent film formed from a polysiloxane material formed by bonding organic components having carbon. Alternatively, an inorganic / organic hybrid amorphous silica film embedded with fullerene (for example, C ₆₀ ) or carbon nanotubes can also be used.

  In still another preferable example of the solid-state imaging device according to the third aspect of the present invention, the transparent cover is directly bonded to the transparent SOG material film, and the cavity selectively removes the transparent SOG material film. It is formed by.

  In still another preferred example of the solid-state imaging device according to the third aspect of the present invention, the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the cavity is the transparent SOG material. It is formed by selectively removing both the film and the other transparent SOG material film.

  In still another preferred example of the solid-state imaging device according to the third aspect of the present invention, the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material film is In addition, it is an inorganic and transparent amorphous silica film or a transparent amorphous silicate film.

  In still another preferable example of the solid-state imaging device according to the third aspect of the present invention, the transparent cover is directly bonded to the transparent SOG material film, and the cavity selectively removes the transparent SOG material film. It is formed by.

  In still another preferred example of the solid-state imaging device according to the third aspect of the present invention, the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the cavity is the transparent SOG material. It is formed by selectively removing both the film and the other transparent SOG material film.

(10) In a fourth aspect of the present invention, a method for manufacturing a solid-state imaging device having a cavity is provided. The manufacturing method of this solid-state imaging device is:
A method for manufacturing a solid-state imaging device, wherein a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
Preparing a solid-state imaging device having an imaging surface;
Forming an inorganic or inorganic / organic hybrid transparent SOG material film so as to cover the entire surface of the imaging surface;
Patterning the transparent SOG material film to selectively expose the imaging surface;
Bonding a transparent cover on the patterned surface of the transparent SOG material film directly or through another transparent SOG material film of an inorganic or inorganic / organic hybrid so as to cover the entire surface of the imaging surface; With
The transparent SOG material film is characterized in that a cavity is formed between the transparent cover and the imaging surface.

  (11) In the solid-state imaging device manufacturing method according to the fourth aspect of the present invention, as described above, an inorganic or inorganic / organic hybrid transparent SOG material film is formed so as to cover the entire imaging surface of the solid-state imaging device. Then, the transparent SOG material film is patterned to selectively expose the imaging surface, and then directly or directly on the surface of the patterned transparent SOG material film or an inorganic or inorganic / organic hybrid A transparent cover is bonded so as to cover the entire surface of the imaging surface through another transparent SOG material film. For this reason, the solid-state imaging device according to the third aspect of the present invention can be manufactured.

  In addition, since the material (intermediate material) disposed between the transparent cover and the imaging surface is a non-organic transparent SOG material film, the above-described difficulty caused by the intermediate material being an organic material. Can be prevented.

  Further, since the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film, the transparent SOG material for forming the transparent SOG material film may be formed by a known spin coating method or spray coating. It is possible to apply so as to cover the entire surface of the imaging surface of the solid-state imaging device by a method, and an extremely flat surface (for example, a surface having a wave of 0.1 μm or less) can be easily obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface.

  The transparent SOG material applied in this manner can be easily etched into a desired pattern by using buffered hydrofluoric acid (BHF) or the like after being cured by heating or the like. Therefore, the transparent SOG material film that forms a cavity between the transparent cover and the imaging surface can be easily obtained. That is, it is easy to form the transparent SOG material film, in other words, to arrange and pattern the intermediate material.

  Since the surface of the transparent SOG material film is extremely flat, the process of joining the transparent cover to the transparent SOG material film (the intermediate material) can be easily performed, and the transparent SOG material film is preferably selected. Thus, good adhesion to the transparent cover and good hermetic sealing properties can be easily obtained.

(12) In a preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the step of forming the transparent SOG material film includes a polymer of a silazane compound having a Si—N (silicon-nitrogen) bond (polysilazane). ) And forming a film of perhydropolysilazane in which all side chains are hydrogen (H), and baking the perhydropolysilazane film to form a transparent amorphous silica (SiO ₂ ) film (silica glass film) ).

  In another preferable example of the method of manufacturing the solid-state imaging device according to the fourth aspect of the present invention, the step of forming the transparent SOG material film includes Si—O (silicon-oxygen) bond and Si—OH (silicon-hydroxyl group). The method includes a step of forming a silicate polymer film having a bond, and a step of forming a transparent amorphous silicate film by firing the silicate polymer film.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, an inorganic transparent SOG material film (inorganic transparent porous SOG material film) including a plurality of nanopores as the transparent SOG material film. Is used. Here, the meaning of “nanopore” and its preferred size are the same as those described above in (3) for the solid-state imaging device according to the first aspect of the present invention.

In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the transparent SOG material film is an inorganic / organic hybrid, and a silica bond (Si—O—Si) is used as the main chain. A transparent film formed of a polysiloxane material having an organic component having carbon bonded thereto is used. Alternatively, an inorganic / organic hybrid silica glass film embedded with fullerene (for example, C ₆₀ ) or carbon nanotubes can also be used.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the transparent cover is bonded to the surface of the transparent SOG material film via another transparent SOG material film, and the other As the transparent SOG material film, an inorganic, transparent amorphous silica film or transparent amorphous silicate film is used.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the transparent cover is directly bonded to the surface of the transparent SOG material film, and the cavity selects the transparent SOG material film. It is formed by patterning so as to be removed.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the transparent cover is bonded to the surface of the transparent SOG material film via another transparent SOG material film, and the cavity is formed. The transparent SOG material film and the other transparent SOG material film are both patterned to be selectively removed.

  In still another preferred example of the method for manufacturing a solid-state imaging device according to the fourth aspect of the present invention, the bonding operation of the transparent cover to the transparent inorganic SOG material film (the intermediate material) is an anode using oxygen plasma in combination. Done by joining.

  (13) In the present invention, as the “solid-state imaging device”, any chip-shaped solid-state imaging device can be used. A lens (microlens) may or may not be included in the imaging surface of the solid-state imaging device. Further, a color filter (microfilter) may be included or not included.

In the present invention, the “transparent cover” is not particularly limited, and any transparent cover can be used. Preferably, borosilicate glass (B ₂ O ₃ / SiO ₂ ) is used, but is not limited thereto. Specifically, “Pyrex (trade name, registered trademark)” which is a low expansion borosilicate glass manufactured by Corning, USA is preferable. The “transparent cover” is preferably a plate having moderate rigidity, for example, a plate-shaped borosilicate glass. This is because the joining operation with the SOG material film is facilitated.

  In the present invention, the “transparent SOG material film” means a transparent film formed of an SOG material, and the “SOG material” means a glass material that can be formed by spin coating. In the present invention, an inorganic or inorganic / organic hybrid transparent SOG material film is used.

There are various inorganic SOG materials for forming such a film, but transparent amorphous silica (SiO ₂ ) (silica glass) is preferable. Amorphous silica is known as a coating material used for antifouling, rust prevention, base protection, electrical insulation, flattening and the like in various fields such as automobiles, ships, houses, and electronic devices. . For example, a polymer of a compound called silazane having a Si—N (silicon-nitrogen) bond (polysilazane), and using the perhydropolysilazane in which all side chains are hydrogen (H), the perhydropolysilazane is used. An amorphous silica film formed by firing this film can be suitably used. Limited company Exsia offers "PHPS polysilazane coating".

  Alternatively, “Accuglass” (trade name), which is an inorganic SOG material (phosphorus-doped silicate) of Honeywell, Inc., and “AccuOpto-T”, an inorganic SOG material (silicate) of the company's Honeywell. Product name) "can also be used suitably. These are used as planarizing materials and insulating film materials in the semiconductor field.

  Alternatively, the silica-based glassy film disclosed in “Method for producing silica-based glassy film and coating agent used therefor” according to Japanese Patent No. 3254473 (Japanese Patent Laid-Open No. 2001-10844) can also be used. This glassy film is formed by heating a liquid containing silicon alkoxide, a volatile organic acid and a volatile non-aqueous organic solvent, and volatilizing the organic acid and the organic solvent. It is obtained by applying it to 200 ° C. and curing it at 200 ° C. or lower.

  As described above, the inorganic porous film usable in the present invention includes a transparent amorphous silica film (silica glass film) and a transparent amorphous silicate film (silicate glass film). It is not limited. This is because nanopores can also be formed in inorganic transparent SOG material films other than these.

  For example, after producing porous amorphous silica by the same method (gel method) as that for producing silica gel, this is pulverized into fine powder, and this porous amorphous silica fine powder is converted into a known inorganic transparent SOG. This is because an inorganic transparent SOG material film containing nanopores can be obtained by adding and mixing to the material. In this regard, a report called “Characteristics and Applications of Gel Silica” has been issued by Nippon Silica Kogyo Co., Ltd. (Tosoh Research and Technical Report Vol. 45 (2001), pages 65 to 69).

Further, the spherical micropore silica porous particles disclosed in “Spherical micropore silica porous particles and production method thereof” disclosed in JP-A No. 2004-182492 can also be used. This spherical micropore silica porous particle is obtained by using a non-toxic, biodegradable nonionic surfactant and using an inexpensive alkali silicate as a silica source, and has a pore diameter of 2 nm or less. Spherical particles having micropores with a pore volume of 0.25 ml / g or more, a BET specific surface area of 600 m ² / g or more, a C constant by BET analysis of 450 or more, and a particle size of 20 to 500 μm.

  There are various inorganic / organic hybrid materials for forming a transparent SOG material film, but any material can be used as long as it is a transparent SOG material mainly composed of inorganic components and organic components bonded to the inorganic components. It can be used. For example, a polysiloxane material having a silica bond (Si—O—Si) as a main chain and an organic component having carbon (for example, a methyl group) bonded thereto can be suitably used. Such a polysiloxane inorganic / organic hybrid material is provided by Suzuka Fuji Xerox Co., Ltd.

Alternatively, silica glass (siloxane) embedded with fullerene can be used. This is obtained by reacting a silicon derivative obtained by hydrosilylating triethoxysilane with fullerene (for example, C ₆₀ ) with tetraethoxysilane. Silica glass embedded with carbon nanotubes can be used instead of fullerenes. These are outlined on the homepage of the Abe (Yoshi) and Gunji Labs of the Department of Industrial Chemistry, Tokyo University of Science (http://www.rs.noda.tuc.ac.jp/gunjiweb/working/hybrid.html). ing.

  “Anodic bonding” is generally known as a method of bonding by bonding glass and silicon, metal, etc., and applying heat and voltage. The principle is that at the same time as heating, a voltage is applied with the glass side as the cathode and the silicon side as the anode, so that the positive ions in the glass are forcibly diffused to the cathode side, and electrostatic attraction is generated between the glass and silicon. It is generated to promote adhesion, and glass and silicon are chemically reacted to join.

  In the solid-state imaging device having no cavity and the manufacturing method thereof according to the present invention, (i) difficulties caused by an intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging element (for example, hygroscopicity, thermal expansion coefficient, refraction, etc.) Rate) can be prevented, and (ii) it is easy to join the intermediate material and the transparent cover.

  In the solid-state imaging device having the cavity and the manufacturing method thereof according to the present invention, (i) the difficulty (for example, hygroscopicity and thermal expansion coefficient) caused by the intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device is prevented. (Ii) good adhesion and hermetic sealing of the intermediate material with the transparent cover, (iii) easy placement and patterning of the intermediate material and bonding with the transparent cover, etc. An effect is obtained.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.

(First embodiment)
FIG. 1 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1 according to the first embodiment of the present invention, FIG. 2 is an external view of the front surface side, and FIG.

(Configuration of solid-state imaging device)
As shown in FIG. 1, the solid-state imaging device 1 is configured by sealing a chip-shaped solid-state imaging device 10 in a chip size package (CSP) including a transparent glass cover 60. The solid-state imaging device 1 does not have a cavity in the gap between the imaging surface 25 and the glass cover 60.

  The solid-state imaging device 10 includes a silicon substrate 11 having a plurality of light receiving elements (not shown) and a plurality of light receiving regions 23 formed on the surface region. One light receiving region 23 and one light receiving element are formed for each pixel PX. A transparent interlayer insulating film 12 is formed on the silicon substrate 11 so as to cover the entire surface thereof. The surface of the interlayer insulating film 12 is the imaging surface 25 of the solid-state imaging device 10, and a plurality of microlenses 22 arranged in an array, that is, a microlens array 22A is formed. One microlens 22 is formed for each pixel PX in the shape of the imaging surface 25. Each light receiving region 23 is arranged so as to overlap the corresponding microlens 22 through the interlayer insulating film 12. In the vicinity of each microlens 22, microfilters (color filters) 24 for three colors of R, G, and B (or four colors obtained by adding black to these three colors) are formed.

  On the surface of the interlayer insulating film 12, a plurality of surface electrodes 15 are formed in a region outside the microlens array 22A (a peripheral region of the imaging surface 25). These surface electrodes 15 are for drawing out electric signals generated by the respective light receiving elements to the outside of the solid-state imaging device 1, and lead wirings (on the surface of the silicon substrate 11 and inside the interlayer insulating film 12 ( It is electrically connected to each light receiving element (each light receiving region 23) via a not shown.

  As is apparent from FIG. 1, the imaging surface 25 has irregularities caused by the microlens 22 and the surface electrode 15.

  The interlayer insulating film 12 is actually composed of a plurality of stacked insulating films. However, the internal structure of the interlayer insulating film 12 is not important for the present invention, and therefore this is illustrated in a simplified manner in FIG. .

  A transparent inorganic nanoporous SOG material film 50 is formed on the surface of the interlayer insulating film 12 and covers the entire surface of the interlayer insulating film 12. Since the thickness of the nanoporous SOG material film 50 is larger than any thickness of the microlens 22 and the surface electrode 15, the microlens array 22 </ b> A and the surface electrode 15 are embedded in the nanoporous SOG material film 50. Therefore, the surface of the nanoporous SOG material film 50 is flat.

A transparent glass cover 60 is formed on the surface of the nanoporous SOG material film 50. Here, the glass cover 60 is made of a transparent borosilicate glass (B ₂ O ₃ / SiO ₂ ) plate, and by bonding the glass plate to the surface of the nanoporous SOG material film 50 by “anodic bonding”, It is integrated with the chip-shaped solid-state imaging device 10.

  Note that the entire side surface of the laminate including the solid-state imaging device 10, the nanoporous SOG material film 50, and the glass cover 60 is covered with an insulating synthetic resin (not shown) that forms part of the CSP.

  The interlayer insulating film 12 has through holes penetrating the interlayer insulating film 12 at positions immediately below the surface electrodes 15, and the through holes are filled with conductive plugs 14, respectively. Yes. In addition, the silicon substrate 11 also has through holes that vertically penetrate the silicon substrate 11 at positions immediately below the surface electrodes 15, and each of the through holes is filled with a conductive plug 13. Has been. The entire circumference of each conductive plug 13 is covered with an insulating film 16a formed on the inner wall of the corresponding through hole, and each conductive plug 13 and the silicon substrate 11 are electrically insulated by the corresponding insulating film 16a. Has been. The upper and lower ends of each conductive plug 14 are in contact with the surface electrode 15 immediately above and the conductive plug 13 immediately below the surface electrode 15, respectively. The lower end of each conductive plug 13 is exposed from the back surface of the silicon substrate 11. The conductive plugs 14 and 13 brought into contact with each other pass through the silicon substrate 1 through the surface electrode on the surface of the interlayer insulating film 12 of the silicon substrate 1 and the wiring film 18 on the back surface of the silicon substrate 1. A through electrode that is electrically interconnected is formed.

  An insulating film 16b is formed on the back surface of the silicon substrate 11 to cover a region excluding the lower end of the exposed conductive plug 13. A plurality of wiring films 18 are formed on the surface of the insulating film 16b. Each wiring film 18 is in contact with the lower end of the corresponding conductive plug 13 exposed on the back surface of the silicon substrate 11.

  A solder resist 17 is formed on the surface of the insulating film 16 b so as to cover the wiring film 18. Through holes are formed in the solder resist 17 so as to overlap the wiring films 18, and conductive contacts 19 are filled in the through holes.

  On the surface of the solder resist 17, a copper paste 20 patterned in a predetermined shape is formed at a position overlapping with each conductive contact 19. A solder ball 21 as an external electrode is formed on each copper paste 20.

  Thus, each surface electrode 15 is on the back surface (the lower surface in FIG. 1) of the solid-state imaging device 1 via the corresponding conductive plugs 14 and 13, the corresponding wiring film 18 and the conductive contact 19. The corresponding copper paste 20 and solder ball 21 are electrically connected.

  External light enters the solid-state imaging device 1 through the glass cover 60, passes through the porous SOG film 50, the microlens 22, and the microfilter 24, and is a light receiving element (not shown) provided in each pixel PX. Is incident on the light receiving region 23. Then, the incident light is photoelectrically converted in each light receiving region 23, and an electric signal corresponding to the intensity of the incident light is generated for each pixel PX. These electric signals are amplified by an amplifying element (not shown) provided adjacent to the light receiving region 23 for each pixel PX, and then sent to the surface electrode 15 via an extraction wiring (not shown). These electric signals are further transmitted through the conductive plugs 14, the conductive plugs 13, the wiring films 18 and the conductive contacts 19 electrically connected to the surface electrodes 15, and the corresponding copper pastes 20 and solder balls 21. It is derived until.

  Note that the solid-state imaging device 10 described above includes the microlens array 22A formed on the imaging surface 25, but may not include the microlens array 22A. Moreover, although the solid-state imaging device 10 described above includes the microfilter 24, the microfilter 24 may not be included.

(Method for manufacturing solid-state imaging device)
Next, a manufacturing method of the solid-state imaging device 1 having the above configuration will be described.

  Each process of the manufacturing method described below is performed at the wafer level. In the final process, a plurality of solid-state imaging devices 1 are simultaneously formed on the silicon wafer 70 as shown in FIG. . Thereafter, the silicon wafer 70 is diced along the scribing lines 71 formed in a grid shape to separate the solid-state imaging devices 1 from each other. In this way, the chip-shaped solid-state imaging device 1 shown in FIGS. 1 to 3 is manufactured. However, for simplicity of illustration and description, only the single solid-state imaging device 1 is illustrated and described here.

  First, as shown in FIG. 4, the solid-state imaging device 10 having the above-described configuration is prepared. This solid-state imaging device 10 has been confirmed to be a non-defective product through a predetermined test. Although FIG. 4 shows one solid-state image sensor 10, actually, a plurality of solid-state image sensors 10 are arranged on the silicon wafer 70 as described above.

  Next, as shown in FIG. 5, a nanoporous SOG material film 50 is formed on the surface of the silicon substrate 11, more precisely on the surface of the interlayer insulating film 12 (imaging surface 25). This step is performed by applying the SOG material in the atmosphere at room temperature by a spin coating method (or spray method may be used). Thus, a coating film of the SOG material is formed. The thickness of the coating film is set to such a thickness that all the microlens array 22A and the surface electrode 15 can be embedded. At this time, the surface of the nanoporous SOG material film 50 is extremely flat (for example, a surface having a swell of 0.1 μm or less).

Thereafter, the coating film of the SOG material is heated to be cured, and at that time, it reacts with moisture and oxygen in the air to change into a transparent amorphous silica (SiO ₂ ) film (silica glass film). In the present invention, an amorphous silica film not containing such nanopores can also be used. However, in the first embodiment, an amorphous silica film containing nanopores is used in order to lower the refractive index of the amorphous silica film and approach the refractive index of air. Therefore, the nanoporous SOG material film 50 includes a large number of nanopores (nanoscale pores), and these nanopores are porous amorphous silica fine powder (fine amorphous silica porous particles) on the SOG material. ) Is added and mixed in advance. As described above, the specific method is disclosed in Tosoh Research and Technical Report Vol. 45 (2001), pages 65 to 69 and JP-A No. 2004-182492.

The size (diameter) of the nanopore is preferably in the range of, for example, 10 nm to 10 ⁴ nm, but needs to be smaller than the wavelength of light that can be imaged by the solid-state imaging device 10. This is because if the nanopore is larger than or equal to the wavelength of light that can be imaged, the incident light may be reflected by the nanopore portion. If the solid-state imaging device 10 is for visible light, the nanopore size is preferably 380 nm or less, and if the solid-state imaging device 10 is for infrared light, the nanopore size is preferably 3000 nm or less.

  In this way, a nanoporous SOG material film 50 made of transparent amorphous silica is obtained.

Next, as shown in FIG. 6, the silicon substrate 11 having the configuration shown in FIG. 5 is carried into the chamber (not shown) of the anodic bonding apparatus, and the silicon substrate 11 is held on the lower chuck 81 by electrostatic force. To do. On the other hand, the borosilicate glass plate 61 is held on the upper chuck 82 by the same electrostatic force. The borosilicate glass plate 61 actually has the same size and the same shape as the silicon wafer 70. That is, the borosilicate glass plate 61 is actually a glass wafer. Then, oxygen (O ₂ ) plasma is generated in the chamber and ashing is performed (O ₂ plasma ashing). Thereby, the surface 50a of the nanoporous SOG material film 50 and the surface 61a of the borosilicate glass plate 61 are activated.

  Thereafter, as shown in FIG. 7, the surface 50a of the nanoporous SOG material film 50 and the surface 61a of the borosilicate glass plate 61 are brought into contact, and a predetermined pressure is applied using the lower chuck 81 and the upper chuck 82, while the nanoporous SOG material is applied. Anodic bonding of the film 50 and the borosilicate glass plate 61 is performed in the presence of oxygen plasma. The voltage is applied so that the silicon substrate 11 becomes an anode and the borosilicate glass plate 61 becomes a cathode. The conditions at that time are, for example, temperature = 160 ° C., applied voltage = 100 V, applied pressure = 1000 N, and application time of voltage and pressure = 5 minutes. By doing so, the nanoporous SOG material film 50 and the borosilicate glass plate 61 are firmly bonded at the bonding surface 83, that is, at the bonding portion between the surface 50 a of the nanoporous SOG material film 50 and the surface 61 a of the borosilicate glass plate 61. .

  Thus, when the bonding of the borosilicate glass plate 61 that forms the glass cover 60 is completed, then, as shown in FIG. 8, a laminated body composed of the silicon substrate 11, the nanoporous SOG material film 50, and the borosilicate glass plate 61 is obtained. The adhesive 85 is attached to the handling holder 84. This is to facilitate the next processing (processing) of the silicon substrate 11. In FIG. 8, the holder 84 is drawn to be slightly larger than the silicon substrate 11, but the actual size of the holder 84 is larger than that of the silicon wafer 70. And in order to make the silicon substrate 11 thin, the silicon substrate 11 is removed from the back surface side until it becomes predetermined thickness (for example, 100 micrometers-50 micrometers). This step can be performed by CMP (Chemical Mechanical Polishing) or known dry or wet etching.

  Next, using the patterned resist film as a mask, the thinned silicon substrate 11 is selectively etched from the back side thereof, so that a plurality of through holes 31 penetrating the silicon substrate 11 are formed as shown in FIG. ,Form. The upper end of the through hole 31 reaches the back surface of the interlayer insulating film 12. The positions where these through holes 31 are formed are directly below each surface electrode 15. This step can be performed by etching such as RIE (Reactive Ion Etching) and ICE (Inductively Coupled Etching). However, it may be performed by a method such as laser processing or anodization.

  Next, using the same resist film, the silicon substrate 11 is selectively etched again from the back surface side to form a plurality of through holes 32 penetrating the interlayer insulating film 12 as shown in FIG. . The upper end of the through hole 32 reaches the back surface of the front electrode 15. The positions where these through holes 32 are formed are directly under each surface electrode 15 and overlap each of the through holes 31. This step can also be performed by etching such as RIE or ICE, but may be performed by a method such as laser processing or anodization. Each through hole 32 communicates with a corresponding through hole 31.

Next, the silicon substrate 11 is thermally oxidized to form silicon dioxide films (SiO ₂ ) as insulating films 16a and 16b on the exposed surface of the silicon substrate 11, as shown in FIG. The insulating film 16 a covers the inner wall of the through hole 31. The insulating film 16 b covers the entire back surface of the silicon substrate 11 except for the portions where the through holes 31 are provided.

  Next, as shown in FIG. 12, the through holes 31 and 32 are filled with polysilicon to form conductive plugs 13 and 14. This step can be performed by depositing polysilicon on the back surface of the silicon substrate 11 by CVD (Chemical Vapor Deposition) and then etching it back. The deposited thickness of the polysilicon needs to be such a thickness that the through holes 31 and 32 are filled with the polysilicon.

  Next, as shown in FIG. 13, a patterned wiring film 18 is formed on the surface of the insulating film 16b. Each wiring film 18 is in contact with the corresponding conductive plug 13. This step can be performed by selectively forming a metal film by sputtering, plating, paste, or the like.

  Thereafter, a solder resist 17 is formed on the surface of the insulating film 16 b to cover the wiring film 18. Then, after a through hole is formed in a predetermined portion of the solder resist 17, a conductive material is embedded therein to form a conductive contact 19. Each conductive contact 19 is in contact with the corresponding wiring film 18. Note that the surface of the solder resist 17 is flattened. The state at this time is as shown in FIG.

  Next, as shown in FIG. 14, a plurality of patterned copper pastes 20 are formed on the surface of the solder resist 17. Each copper paste 20 is in contact with a corresponding conductive contact 19. Thereafter, solder balls 21 are formed on each copper paste 20.

  When a plurality of solid-state imaging devices 1 are formed on the silicon wafer 70 in this way, the silicon wafer 70 is diced along the scribe lines 71 formed in a grid pattern, and the solid-state imaging devices 1 are separated from each other. Is done. In this way, the solid-state imaging device 1 shown in FIG. 1 is obtained.

  In the actual manufacturing process, thereafter, the entire side surface of the solid-state imaging device 1 is covered with an insulating synthetic resin (not shown) constituting a part of the CSP. Thus, the manufacturing process is completed.

  As described above, the solid-state imaging device 1 according to the first embodiment of the present invention has the microlens array 22A (imaging) in the gap between the microlens array 22A of the solid-state imaging device 10 and the transparent glass cover 60. A transparent inorganic nanoporous SOG material film 50 covering the entire surface 25) is disposed. That is, the film 50 (intermediate material) disposed in the gap between the microlens array 22A (imaging surface 25) and the glass cover 60 is a transparent inorganic nanoporous SOG material film that does not contain organic substances. For this reason, difficulties caused by the intermediate material being an organic material, for example, because the hygroscopic property is high, the internal solid-state imaging device 1 is easily affected by moisture, the thermal expansion coefficient is large, and it is easy to peel off due to expansion / contraction. Etc. can be prevented.

  Further, since the nanoporous SOG material is a spin-on-glass material, the nanoporous SOG material is applied onto the solid-state imaging device 10 so as to cover the microlens array 22A (imaging surface 25) by a known spin coating method or spray coating method. Is possible. At that time, it is also easy to embed the microlens array 22A in the nanoporous SOG material. Thereafter, when the nanoporous SOG material is heated and cured, a transparent inorganic nanoporous SOG material film 50 covering the entire surface of the microlens array 22A is obtained. Therefore, the arrangement | positioning operation | work of the said intermediate material is easy.

  Furthermore, since the transparent inorganic nanoporous SOG material film 50 and the transparent glass cover 60 are bonded to each other by anodic bonding, the bonding operation of the transparent glass cover 60 is also easy.

  Note that the refractive index of the transparent inorganic nanoporous SOG material is normally about n = 1.4 to 1.3. In the first embodiment, however, n = 1. It is lowered to about 2. Therefore, no problem occurs in terms of refractive index.

  As is clear from the above description, the entire solid-state imaging device 1 of the first embodiment is hermetically sealed. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material film 50, and the gap is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.

(Second Embodiment)
FIG. 15 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1A according to the second embodiment of the present invention.

  The solid-state imaging device 1A according to the present embodiment is provided with two transparent nanoporous SOG material films 50a and 50b and a transparent synthetic resin film 51 sandwiched between them instead of the transparent nanoporous SOG material film 50. The configuration is the same as that of the solid-state imaging device 1 of the first embodiment having no cavity except for the points except the microlens 22 and the microfilter 24. Therefore, the same reference numerals as those of the solid-state imaging device 1 according to the first embodiment shown in FIG. In FIG. 15, a solid-state imaging device that does not include the microlens 22 and the microfilter 24 is indicated by 10 ′.

  In the solid-state imaging device 1A, the same nanoporous SOG material film 50a as the nanoporous SOG material 50 of the solid-state imaging device 1 of the first embodiment is formed on the surface (imaging surface 25) of the interlayer insulating film 12 of the silicon substrate 11. Then, after forming a thin synthetic resin film 51 on the surface of the nanoporous SOG material film 50a, a nanoporous SOG material film 50b (which corresponds to another transparent SOG material film) is formed on the surface. The materials of the nanoporous SOG material films 50a and 50b may be the same or different. Although the refractive index slightly increases, a non-porous SOG film may be used instead of one or both of the nanoporous SOG material films 50a and 50b.

  As the synthetic resin film 51, polyimideamidosilane or the like can be used.

  Thus, the number of nanoporous SOG material films can be arbitrarily adjusted as necessary. However, it is usually preferable to interpose a synthetic resin film such as the synthetic resin film 51 between adjacent nanoporous SOG material films. The reason is to improve the adhesion between the nanoporous SOG material films 50a and 50b. Therefore, if these two SOG material films have good adhesion, the synthetic resin film 51 can be omitted.

  The solid-state imaging device 1A of the second embodiment is hermetically sealed as a whole. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material films 50a and 50b, and the gap is completely sealed. Further, the influence of using the thin synthetic resin film 51 is negligible. Therefore, like the solid-state imaging device 1 of the first embodiment, there is an advantage that it is hardly affected by the external environment.

(Third embodiment)
The solid-state imaging device according to the third embodiment of the present invention uses an inorganic / organic hybrid transparent SOG material film instead of the transparent nanoporous SOG material film 50 used in the solid-state imaging device 1 of the first embodiment described above. The other configuration and manufacturing method are the same as those in the first embodiment. Therefore, the description about the structure and manufacturing method is omitted.

  As the inorganic / organic hybrid material used in the third embodiment, a polysiloxane system having a silica bond (Si—O—Si) as a main chain and an organic component having carbon (for example, a methyl group) bonded thereto. Uses materials (provided by Suzuka Fuji Xerox Co., Ltd.). However, other inorganic / organic hybrid materials can be used as long as they are transparent SOG materials mainly composed of inorganic components and organic components bonded to the inorganic components.

  The inorganic / organic hybrid material is a material that can make use of the characteristics of both the inorganic material and the organic material. Therefore, the material is suitable for the performance required for the intermediate material disposed between the imaging surface 25 and the glass cover 60. There is an advantage that it is easy to select.

  Since the solid-state imaging device according to the third embodiment is hermetically sealed as a whole, there is an advantage that the solid-state imaging device is hardly affected by the external environment, like the solid-state imaging device 1 according to the first embodiment.

(Fourth embodiment)
FIG. 16 is a cross-sectional view illustrating a schematic configuration of a solid-state imaging device 1B according to the fourth embodiment of the present invention.

  The solid-state imaging device 1B according to the present embodiment includes two transparent nanoporous SOG material films 50a and 50b and a transparent synthetic resin film 51 sandwiched between them in the solid-state imaging device 1A according to the second embodiment (see FIG. 15). On the other hand, this corresponds to a transparent BPSG (Boro-Phospho-Silicate Glass) film 50c and a transparent synthetic resin film 52 added thereto. That is, the nanoporous SOG material film 50a is formed on the surface (imaging surface 25) of the transparent interlayer insulating film 12 of the solid-state imaging device 10, the synthetic resin film 51 is formed thereon, the nanoporous SOG material film 50b is formed thereon, and the nanoporous SOG material film 50b is formed thereon. A synthetic resin film 52 and a known BPSG film 50c are formed thereon. Except for this point, the configuration is the same as that of the solid-state imaging device 1 of the first embodiment.

  In the solid-state imaging device 1B, a thin synthetic resin film 52 is formed on the surface of the nanoporous SOG material film 50b, and then a BPSG film 50c is formed on the surface. The BPSG film 50c used here is a silicate glass film containing boron and phosphorus, and is one of the SOG material films.

  As described above, the intermediate material disposed (filled) in the gap between the imaging surface 25 and the glass cover 60 may have a three-layer structure including the three SOG material films 50a, 50b, and 50c.

  This three-layer structure is realized as follows, for example. First, an SOG material for the nanoporous SOG material film 50a is applied on the imaging surface 25 of the solid-state imaging device 10 so as to have a predetermined film thickness by a spin coating method, and then cured by heating or the like to be nanoporous SOG. The material film 50a is used. Subsequently, after forming a thin synthetic resin film 51 on the surface of the nanoporous SOG material film 50a, an SOG material for the nanoporous SOG material film 50b is applied by a spin coating method so as to have a predetermined film thickness. Is cured by heating or the like to form a nanoporous SOG material film 50b. Further, after forming a thin synthetic resin film 52 on the surface of the nanoporous SOG material film 50b, the SOG material for the BPSG film 50c is applied to a predetermined film thickness by a spin coating method, and then this is heated or the like Thus, the BPSG film 50c is cured. Thereafter, the glass cover 60 is adhered to the surface of the BPSG film 50c.

  The solid-state imaging device 1B of the fourth embodiment is hermetically sealed as a whole. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material films 50a and 50b and the BPSG film 50c, and the gap is completely sealed. Further, the influence of using the thin synthetic resin films 51 and 52 is negligible. Therefore, like the solid-state imaging device 1 of the first embodiment, there is an advantage that it is hardly affected by the external environment.

(Fifth embodiment)
FIG. 17 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1C according to the fifth embodiment of the present invention.

  The solid-state imaging device 1C of the present embodiment is a solid-state imaging device according to the second embodiment, except that the glass cover 60 is bonded to the surface of the nanoporous SOG material film 50b via a relatively thick and transparent synthetic resin film 53. The configuration is the same as that of the imaging device 1A.

  Since the synthetic resin film 53 has an action as an adhesive, it can be said that the glass cover 60 is bonded to the surface of the nanoporous SOG material film 50b by the synthetic resin film 53. In this case, there is an advantage that it is not necessary to use the “anodic bonding” used in the first embodiment. Since the influence on the refractive index caused by interposing the synthetic resin film 53 is negligible, the use of the synthetic resin film 53 does not hinder the imaging performance.

  In the solid-state imaging device 1C of the fifth embodiment, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material films 50a and 50b, but the gap is completely sealed. It cannot be said that it has been done. That is, it cannot be said to be hermetic sealing. This is because a relatively thick synthetic resin film 53 is used, and moisture may enter through the synthetic resin film 53. As described above, the solid-state imaging device 1C is somewhat susceptible to the external environment as compared with the solid-state imaging devices of the first to fourth embodiments described above, but the glass cover 60 is joined by using the synthetic resin film 53. There is an advantage that can be easily performed.

(Sixth embodiment)
FIG. 18 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1D according to the sixth embodiment of the present invention. Unlike the solid-state imaging devices according to the first to fifth embodiments described above, the solid-state imaging device 1D has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.

  As illustrated in FIG. 18, the solid-state imaging device 1 </ b> D of the sixth embodiment has a configuration in which a cavity 55 is added to the solid-state imaging device 1 </ b> A (see FIG. 15) b of the second embodiment. That is, the nanoporous SOG material film 50a located close to the imaging surface 25 of the solid-state imaging device 10 and the synthetic resin film 51 adjacent thereto are selectively removed, and a cavity 55 is formed at a place where both are removed. Yes. The planar shape of the cavity 55 is rectangular (see FIG. 25).

  The cavity 55 is formed as follows. First, a nanoporous SOG material film 50a is formed by applying an SOG material for the nanoporous SOG material film 50a on the imaging surface 25 and then curing it. Next, the nanoporous SOG material film 50a is selectively etched to expose the microlens array 22A. On the other hand, the nanoporous SOG material film 50b is formed by applying an SOG material for the nanoporous SOG material film 50b to the plane on the bonding side of the glass cover 60 and then curing it. Then, after the synthetic resin film 51 is formed on the surface of the remaining nanoporous SOG material film 50a or on the exposed surface of the nanoporous SOG material film 50b on the glass cover 60 side, the nanoporous SOG material film 50a and the nanoporous film are formed. The SOG material film 50b is adhered. Thus, the cavity 55 is formed in the gap between the imaging surface 25 and the glass cover 60. Since the nanoporous SOG material films 50a and 50b are firmly bonded by the synthetic resin film 51, the hermetic sealing property of the bonded surfaces is good.

  The inside of the cavity 55 is sealed with air or nitrogen gas as necessary, or is kept in a vacuum state (low vacuum state) of a predetermined level. This is easily realized by performing the bonding process of the glass cover 60 to the solid-state imaging device 10 in the atmosphere, nitrogen gas, or vacuum atmosphere.

  As described above, the solid-state imaging device 1D according to the sixth embodiment of the present invention is patterned so as to surround the imaging surface 25 in the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60. Inorganic transparent SOG material films 50a and 50b are arranged. That is, the material (intermediate material) disposed in the gap between the imaging surface 25 and the glass cover 60 is the non-organic transparent SOG material films 50a and 50b. For this reason, difficulties caused by the intermediate material being an organic material, for example, because the hygroscopic property is high, the internal solid-state imaging device 10 is easily affected by moisture, the thermal expansion coefficient is large, and it is easy to peel off due to expansion / contraction. Etc. can be prevented.

  Further, since the transparent SOG material film 50a is an inorganic spin-on-glass material film, the transparent SOG material for forming the transparent SOG material film 50a is converted into a solid-state imaging device by a known spin coating method or spray coating method. It is possible to apply so as to cover the entire 10 imaging surfaces 25, and an extremely flat surface (for example, a surface having a swell of 0.1 μm or less) can be easily obtained. This does not change even if the imaging surface 25 has irregularities due to the microlens array 22A. Thereafter, the transparent SOG material 50a thus applied is cured by heating or the like, and then patterned so as to form the cavity 55, the transparent SOG material film 50a is obtained.

  Further, since the transparent SOG material film 50b is also an inorganic spin-on-glass material film, the transparent SOG material for forming the transparent SOG material film 50b is made of a glass cover 60 by a known spin coating method or spray coating method. And a very flat surface (for example, a surface having a undulation of 0.1 μm or less) can be easily obtained. Thereafter, when the transparent SOG material 50b thus applied is cured by heating or the like, a transparent SOG material film 50b is obtained.

  Therefore, it is easy to form the transparent SOG material films 50a and 50b, in other words, to arrange and pattern the intermediate material.

  Further, since the surfaces of the transparent SOG material films 50a and 50b are extremely flat, the process of joining the transparent SOG material film 50b on the glass cover 60 to the transparent SOG material film 50a can be easily performed, and the transparent SOG material film 50a. And 50b are preferably selected, it is possible to easily obtain good adhesion to the glass cover 60 and good hermetic sealing.

  As is clear from the above description, in the solid-state imaging device 1D of the sixth embodiment, the cavity 55 is hermetically sealed. That is, the nanoporous SOG material films 50a and 50b are disposed in the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60, and the nanoporous SOG material film 50b is partially removed to form the cavity 55. Therefore, the cavity 55 is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.

  In the sixth embodiment, the cavity 55 is formed by partially removing only the nanoporous SOG material film 50a disposed in the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60. However, the present invention is not limited to this. The cavity 55 may be formed by partially removing both of the nanoporous SOG material films 50a and 50b (see the ninth embodiment in FIG. 25).

(Seventh embodiment)
FIG. 19 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1E according to the seventh embodiment of the present invention. The solid-state imaging device 1E also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.

  The solid-state imaging device 1E of the seventh embodiment has a configuration in which the synthetic resin film 51, the microlens 22, and the microfilter 24 are removed from the solid-state imaging device 1D (see FIG. 18) of the sixth embodiment. The nanoporous SOG material film 50a on the solid-state imaging device 10 'side and the nanoporous SOG material film 50b on the glass cover 60 side are directly bonded without using an adhesive.

  As described above, as the nanoporous SOG material films 50a and 50b which are firmly bonded without using the synthetic resin film 51 acting as an adhesive and can obtain a desired hermetic sealing property, for example, the above-described “PHPS polysilazane coating” Examples include an amorphous silica film obtained by (provided by Exsia), a phosphorus-doped amorphous silica film, and a boron / phosphorus-doped amorphous silica film formed with nanopores.

  As is clear from the above description, in the solid-state imaging device 1E of the seventh embodiment, the cavity 55 is hermetically sealed as in the case of the sixth embodiment. Therefore, there is an advantage that it is hardly affected by the external environment.

(Eighth embodiment)
FIG. 20 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1F according to the eighth embodiment of the present invention. This solid-state imaging device 1 </ b> F also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60. As shown in FIG. 26, a rectangular cavity 55 exists on the surface of the solid-state imaging device 1 </ b> F via a transparent glass cover 60.

  The solid-state imaging device 1F of the eighth embodiment corresponds to a configuration in which the nanoporous SOG material film 50b and the synthetic resin film 51 are removed from the solid-state imaging device 1D (see FIG. 18) of the sixth embodiment. That is, the glass cover 60 and the SOG material film 54 on the solid-state imaging device 10 side are directly joined without using an adhesive. However, it differs from the nanoporous SOG material film 50b in that the SOG material film 54 is not nanoporous. This is because the SOG material film 54 is selectively removed so as to expose the microlens array 22A, in other words, so as to form the cavity 55, so that incident light passes through the SOG material film 54. Therefore, it is not necessary to make the SOG material film 54 nanoporous in order to lower the refractive index. However, it goes without saying that the SOG material film 54 may be nanoporous.

  The configuration of the solid-state imaging device 1F of the eighth embodiment corresponds to a configuration in which the nanoporous SOG material film 50 is replaced with a non-nanoporous SOG material film 54 and a cavity 55 is further added in the solid-state imaging device 1 of the first embodiment. It can also be said.

  As described above, as the SOG material film 54 that is firmly bonded to the glass cover 60 without using a synthetic resin film acting as an adhesive and obtains a desired hermetic sealing property, for example, the above-described “PHPS polysilazane coating” Amorphous silica film obtained by (provided by Exsia Co., Ltd.), phosphorus-doped amorphous silica film, boron / phosphorus-doped amorphous silica film, and the like.

  Next, a manufacturing method of the solid-state imaging device 1F of the eighth embodiment will be described.

  First, similarly to the case of the solid-state imaging device 1 of the first embodiment, the structure shown in FIG. 21 (this corresponds to the structure shown in FIG. 5), that is, the imaging surface of the solid-state imaging device 10a before the through electrode is formed. 25, a structure in which the SOG material film 54 is formed with a predetermined thickness is obtained. The SOG material film 54 has a thickness that allows the microlens array 22A and the surface electrode 15 to be embedded therein.

  Next, as shown in FIG. 22, a mask 56 patterned so as to have a planar shape of the cavity 55 is formed on the surface of the SOG material film 54. Then, using the mask 56, the SOG material film 54 is selectively etched away by, for example, buffered hydrofluoric acid (BHF). At this time, the microlens 22 and the interlayer insulating film 12 formed of an organic material are not affected by the etching action, which is convenient. As a result, as shown in FIG. 22, the microlens array 22A is exposed and the surface electrode 15 is embedded in the SOG material film 54.

  Next, after removing the mask 56, a borosilicate glass plate 61 is bonded to the surface of the patterned SOG material film 54. The state at this time is as shown in FIG. This bonding may be performed by the “anodic bonding” used in the first embodiment, but the SOG material film 54 and the glass cover 60 are made of materials so as to obtain good adhesion and desired airtight sealing. If combined, it is possible to join directly by a method other than “anodic bonding”.

  For example, a fusion bonding method of an Al—Ge alloy brazing material that adheres to a glass material and exhibits strong characteristics, a fusion bonding of low melting point lead glass, or the like can be used.

  Subsequent steps are the same as those in the first embodiment. That is, on the surface opposite to the bonding surface 83 of the glass cover 60, the laminated body composed of the silicon substrate 11, the SOG material film 54 and the borosilicate glass plate 61 is attached to the handling holder 84 using the adhesive 85. Then, the silicon substrate 11 is thinned, the through electrodes are formed on the silicon substrate 11, and the solder balls 21 are formed as external electrodes. In this way, the structure shown in FIG. 24 (this corresponds to the structure shown in FIG. 14) is obtained.

  When a plurality of solid-state imaging devices 1F are obtained on the silicon wafer 70 in this way, the silicon wafer 70 is diced along the scribing lines 71 formed in a grid shape, and the solid-state imaging devices 1F are separated from each other. The In this way, the solid-state imaging device 1F having the configuration shown in FIGS. 20 and 25 is obtained.

  In the actual manufacturing process, thereafter, the entire side surface of the solid-state imaging device 1F is covered with an insulating synthetic resin (not shown) constituting a part of the CSP. Thus, the manufacturing process is completed.

  As is apparent from the above description, in the solid-state imaging device 1F of the eighth embodiment, the cavity 55 is hermetically sealed. That is, the non-nanoporous SOG material film 54 is disposed in the gap between the imaging surface 25 and the glass cover 60 that are firmly bonded, and the SOG material film 54 is partially removed to form the cavity 55. Therefore, the cavity 55 is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.

(Ninth embodiment)
FIG. 25 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1G according to the ninth embodiment of the present invention. This solid-state imaging device 1G also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.

  As shown in FIG. 25, the solid-state imaging device 1G according to the ninth embodiment partially includes both the nanoporous SOG material films 50a and 50b in the solid-state imaging device 1D according to the sixth embodiment (see FIG. 18). In this way, the cavity 55 is formed. Other configurations are the same as those of the solid-state imaging device 1D of the sixth embodiment.

  In the solid-state imaging device 1G, since the height (thickness) of the cavity 55 is equal to the sum of the film thicknesses of the nanoporous SOG material films 50a and 50b, the plane on the solid-state imaging device 10 side of the glass cover 60 and the imaging surface 25 Is longer than that of the solid-state imaging device 1D of the sixth embodiment.

  Such a cavity 55 can be easily obtained by continuously etching both of the nanoporous SOG material films 50a and 50b using the same mask. For example, if buffered hydrofluoric acid (BHF) is used as an etchant, such etching can be easily realized.

  Also in the solid-state imaging device 1G of the ninth embodiment, the cavity 55 is hermetically sealed. That is, the nanoporous SOG material films 50a and 50b are laminated and disposed in the gap between the imaging surface 25 and the glass cover 60 that are firmly bonded, and the nanoporous SOG material films 50a and 50b are selectively disposed. Since the cavity 55 is formed by the removal, the cavity 55 is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.

(Modification)
The first to ninth embodiments described above show examples embodying the present invention. Therefore, the present invention is not limited to these embodiments, and various modifications can be made without departing from the spirit of the present invention. Needless to say, deformation is possible. For example, in the embodiment described above, one or two nanoporous SOG material films are used, but it goes without saying that an SOG material film not containing nanopores (not nanoporous) may be used. Further, a nanoporous SOG material film and a SOG material film not containing nanopores (not nanoporous) may be used in combination. An inorganic nanoporous SOG material film and an inorganic / organic hybrid SOG material film may be used in combination.

  Furthermore, in the first to ninth embodiments described above, the solder ball 21 is provided on the back surface of the solid-state imaging device as the external electrode, but the solder ball 21 may not be provided. In this case, the copper paste 20 becomes a gear part electrode. Further, in these embodiments, the position of the solder ball 21 as the external electrode is shifted inward from the through electrode (conductive plugs 13 and 14), but it may be a position overlapping the through electrode or the through electrode. It may be shifted outward.

  The configuration of the solid-state imaging device is arbitrary, and may or may not have a lens (microlens) or a color filter (microfilter).

It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 1st Embodiment of this invention. (A) is the external view of the surface side of the solid-state imaging device concerning a 1st embodiment of the present invention, and (b) is the external view of the back side. 1 is a schematic plan view of a silicon wafer on which a plurality of solid-state imaging devices according to a first embodiment of the present invention are formed. It is a fragmentary sectional view which shows the manufacturing method of the solid-state imaging device which concerns on 1st Embodiment of this invention for every process. FIG. 5 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. 4. FIG. 6 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. 5. FIG. 7 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. 6. FIG. 10 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG. 7. FIG. 9 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. 8. FIG. 10 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG. 9. FIG. 10 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. FIG. 12 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step and is a continuation of FIG. 11. FIG. 13 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG. 12. FIG. 14 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG. 13. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 4th Embodiment of this invention. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 5th Embodiment of this invention. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 6th Embodiment of this invention. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 7th Embodiment of this invention. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 8th Embodiment of this invention. It is a fragmentary sectional view which shows the manufacturing method of the solid-state imaging device which concerns on 8th Embodiment of this invention for every process. FIG. 22 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each step, which is a continuation of FIG. 21. FIG. 23 is a partial cross-sectional view illustrating the method for manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each process, and is a continuation of FIG. 22. FIG. 24 is a partial cross-sectional view illustrating the method of manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each process, and is a continuation of FIG. 23. It is sectional drawing which shows schematic structure of the solid-state imaging device which concerns on 9th Embodiment of this invention. It is an external view on the surface side of the solid-state imaging device concerning an 8th embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G Solid-state imaging device 10, 10 'Solid-state image sensor 10a Solid-state image sensor before through-electrode formation 11 Silicon substrate 12 Interlayer insulating film 13 Conductive plug 14 Conductive plug 15 Surface electrode 16a, 16b Insulating film 17 Solder resist 18 Wiring film 19 Conductive contact 20 Copper paste 21 Solder ball (external electrode)
22 Microlens 22A Microlens array 23 Light receiving area 24 Microfilter 25 Imaging surface 31 Through hole 32 Through hole 50, 50a, 50b Nanoporous SOG material film 50c BPSG film (SOG material film)
50A Nanoporous SOG material film surface 51, 52, 53 Synthetic resin film 54 SOG material film 55 Cavity 56 Mask 57 Window of SOG material film 60 Glass cover 61 Borosilicate glass plate 61A Surface of borosilicate glass plate 70 Silicon wafer 71 Scribe line 81 Lower chuck 82 Upper chuck 83 Bonding surface 84 Handling holder 85 Adhesive PX Pixel

Claims (24)

A solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
A solid-state imaging device having an imaging surface;
A transparent cover formed so as to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device;
An inorganic or inorganic / organic hybrid transparent SOG material film covering the entire surface of the imaging surface disposed in the gap;
The solid-state imaging device, wherein the transparent cover is joined to the transparent SOG material film directly or via another transparent SOG material film. A solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
A solid-state imaging device having an imaging surface;
A transparent cover formed so as to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device;
An inorganic or inorganic / organic hybrid transparent SOG material film arranged to surround the imaging surface, disposed in the gap,
The transparent cover is bonded to the transparent SOG material film directly or via another transparent SOG material film,
The transparent SOG material film is characterized in that a cavity is formed between the transparent cover and the imaging surface.   The solid-state imaging device according to claim 1, wherein the transparent SOG material film is an inorganic and transparent amorphous silica film.   The solid-state imaging device according to claim 1, wherein the transparent SOG material film is an inorganic and transparent amorphous silicate film.   The solid-state imaging device according to claim 1, wherein the transparent SOG material film is inorganic and includes a plurality of nanopores.   The solid-state imaging device according to claim 5, wherein a size of the nanopore is smaller than a wavelength of light that can be imaged by the solid-state imaging device.   3. The transparent SOG material film is a transparent film made of a polysiloxane-based material, which is an inorganic / organic hybrid, having a silica bond as a main chain, and an organic component having carbon bonded thereto. The solid-state imaging device described in 1.   3. The solid-state imaging device according to claim 1, wherein the transparent SOG material film is an inorganic / organic hybrid and is an amorphous silica film in which fullerenes or carbon nanotubes are embedded.   The transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material film is inorganic, and is a transparent amorphous silica film or a transparent film. The solid-state imaging device according to claim 3, wherein the solid-state imaging device is an amorphous silicate film. The transparent cover is directly bonded to the transparent SOG material film;
The solid-state imaging device according to claim 2, wherein the cavity is formed by selectively removing the transparent SOG material film. The transparent cover is bonded to the transparent SOG material film via another transparent SOG material film;
The solid-state imaging device according to claim 2, wherein the cavity is formed by selectively removing both the transparent SOG material film and the other transparent SOG material film.   The solid-state imaging device according to claim 1, wherein the solid-state imaging element does not include a lens and a color filter. A method for manufacturing a solid-state imaging device, wherein a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
Preparing a solid-state imaging device having an imaging surface;
Forming an inorganic or inorganic / organic hybrid transparent SOG material film so as to cover the entire surface of the imaging surface;
And a step of bonding a transparent cover to the surface of the transparent SOG material film directly or through another transparent SOG material film of an inorganic or inorganic / organic hybrid so as to cover the entire surface of the imaging surface. A method for manufacturing a solid-state imaging device. A method for manufacturing a solid-state imaging device, wherein a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
Preparing a solid-state imaging device having an imaging surface;
Forming an inorganic or inorganic / organic hybrid transparent SOG material film so as to cover the entire surface of the imaging surface;
Patterning the transparent SOG material film to selectively expose the imaging surface;
Bonding a transparent cover to the surface of the patterned transparent SOG material film directly or through another transparent SOG material film of an inorganic or inorganic / organic hybrid so as to cover the entire surface of the imaging surface; Prepared,
The method for manufacturing a solid-state imaging device, wherein the transparent SOG material film forms a cavity between the transparent cover and the imaging surface.   The step of forming the transparent SOG material film includes the step of forming a perhydropolysilazane film in which all of the side chains are hydrogen with a polymer of silazane having a Si—N bond, and firing the perhydropolysilazane film. The method of manufacturing a solid-state imaging device according to claim 13, further comprising: forming a transparent amorphous silica film.   The step of forming the transparent SOG material film includes a step of forming a silicate polymer film having a Si—O bond and a Si—OH bond, and a transparent amorphous silicate by firing the silicate polymer film. The method for manufacturing a solid-state imaging device according to claim 13, further comprising a step of forming a film.   The method for manufacturing a solid-state imaging device according to claim 13, wherein an inorganic transparent SOG material film including a plurality of nanopores is used as the transparent SOG material film.   The solid-state imaging device manufacturing method according to claim 17, wherein a size of the nanopore is smaller than a wavelength of light that can be captured by the solid-state imaging device.   The transparent SOG material film is a transparent film made of a polysiloxane-based material that is an inorganic / organic hybrid and has a silica bond as a main chain and an organic component having carbon bonded thereto. Or a method for producing a solid-state imaging device according to 14.   15. The method of manufacturing a solid-state imaging device according to claim 13, wherein an inorganic / organic hybrid silica glass film embedded with fullerene or carbon nanotube is used as the transparent SOG material film.   The transparent cover is bonded to the surface of the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material film is an inorganic, transparent amorphous silica film or transparent The method for manufacturing a solid-state imaging device according to claim 13 or 14, wherein an amorphous silicate film is used. The transparent cover is directly bonded to the surface of the transparent SOG material film;
15. The method of manufacturing a solid-state imaging device according to claim 14, wherein the cavity is formed by patterning so as to selectively remove the transparent SOG material film. The transparent cover is bonded to the surface of the transparent SOG material film through another transparent SOG material film,
15. The method for manufacturing a solid-state imaging device according to claim 14, wherein the cavity is formed by patterning so as to selectively remove both the transparent SOG material film and the other transparent SOG material film.   The method for manufacturing a solid-state imaging device according to any one of claims 12 to 23, wherein the step of bonding the transparent cover to the transparent SOG material film is performed by anodic bonding using oxygen plasma in combination.

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