WO2008032706A1 - Dispositif d'imagerie à semi-conducteurs et son procédé de production - Google Patents

Dispositif d'imagerie à semi-conducteurs et son procédé de production Download PDF

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Publication number
WO2008032706A1
WO2008032706A1 PCT/JP2007/067658 JP2007067658W WO2008032706A1 WO 2008032706 A1 WO2008032706 A1 WO 2008032706A1 JP 2007067658 W JP2007067658 W JP 2007067658W WO 2008032706 A1 WO2008032706 A1 WO 2008032706A1
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transparent
solid
state imaging
imaging device
material film
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PCT/JP2007/067658
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Japanese (ja)
Inventor
Manabu Bonkohara
Kazutoshi Kamibayashi
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Manabu Bonkohara
Kazutoshi Kamibayashi
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Publication of WO2008032706A1 publication Critical patent/WO2008032706A1/fr

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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05024—Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05025—Disposition the internal layer being disposed on a via connection of the semiconductor or solid-state body
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
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    • H01L2224/05026—Disposition the internal layer being disposed in a recess of the surface
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present invention relates to a solid-state imaging device in which a solid-state imaging device is mounted on a chip size package (CSP) and a manufacturing method thereof, and more specifically, a chip-shaped solid-state imaging device and a transparent cover that covers the imaging surface Transparent in the gap between the imaging surface and the transparent cover
  • CSP chip size package
  • the present invention relates to a solid-state imaging device in which a G (Spin-On-Glass) material film is disposed and the gap is filled with the SOG material film, or a cavity (cavity) is formed in the gap, and a manufacturing method thereof.
  • G Spin-On-Glass
  • solid-state imaging devices have been further reduced in size and advanced in functionality. Accordingly, they have been increasingly installed in mobile devices such as mobile phones and portable computers, and in automobiles. Is growing more and more.
  • Some solid-state imaging devices used in solid-state imaging devices include microlenses (microlens arrays) formed in an array corresponding to each pixel.
  • a force is required to provide a transparent cover (usually a glass cover) that covers the entire surface of the microlens array in the package.
  • a resin material is placed (filled) between the microlens-array and the transparent cover, where there is a small gap, in other words, a cavity formed between the microphone lens array and the transparent cover.
  • no cavity exists between the Micron's array and the transparent cover.
  • the cavity is filled with air or nitrogen gas or a predetermined level of vacuum as necessary.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-163341
  • a flat plate portion made of glass or the like is overlaid on a solid-state imaging device (chip), and a bump provided on the solid-state imaging device is electrically connected to a metal wiring formed on the flat plate portion. Seal the connection with a sealant
  • a solid-state imaging device having an airtight sealing portion (cavity) is configured.
  • This solid-state imaging device is mounted after positioning in a package (for example, a ceramic package) having a positioning reference surface.
  • a stress buffer layer is inserted between the metal wiring on the flat plate and the bump on the solid-state image sensor (summary, Figure 1 to Figure 7, paragraph). 002; see! -0042).
  • Non-patent document 1 Nikkei Electronics, November 21, 2005 issue, “Improving value with alternative packages regardless of wire connection”, page 105 To 109) and Patent Document 2 (Japanese Patent Laid-Open No. 2001-118967).
  • a solid-state imaging device (manufactured by Sanyo Electric Co., Ltd.) described in Non-Patent Document 1 is filled with a transparent resin in a gap between a solid-state imaging device (chip) and a glass cover.
  • the grease prevents the stress caused by the difference in thermal expansion coefficient with silicon constituting the solid-state imaging device.
  • a glass cover that has a small difference in thermal expansion coefficient from the silicon that constitutes the solid-state imaging device! (See Fig. 3, page 109).
  • the solid-state imaging device of Patent Document 2 stores a solid-state imaging device (chip) in a recess of a casing (package), and fills the recess with a transparent resin, so that light with a short wavelength in the ultraviolet region is received. A resin layer that absorbs and transmits visible light is formed. In this way, the color filter formed on the surface of the solid-state image sensor is protected. In addition, a glass plate is attached to cover the resin layer to protect the surface of the resin layer (see summary, figure;! -3, paragraphs 0010-0020).
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2003-163341 (Abstract, FIGS. 1 to 7, Paragraph 002;! To 0042)
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2001-118967 (Abstract, Figure;! To 3, Paragraph 0010 to Non-Patent Document 1: "Nikkei Electronics" November 21, 2005 (pages 105-109) Disclosure of the Invention
  • the solid-state imaging device having the above-described cavity eliminates the problem of refractive index, and it is necessary to hermetically seal the package (cavity) including the preferable 1S transparent cover. This is due to the expansion and contraction of the gas in the air gap. There are drawbacks such as the possibility of airtightness being reduced. This If you take this into consideration, don't have an air gap!
  • an organic material for example, an epoxy resin
  • an organic material for example, an epoxy resin
  • Organic materials however, have high hygroscopic properties, so that the internal solid-state imaging device is easily affected by moisture, and has a high thermal expansion rate and is easily peeled off by expansion / contraction. Therefore, it is not easy to find a material that satisfies all of the above-mentioned requirements, the power that is desired to make the intermediate material an inorganic material.
  • Patent Document 1 has a cavity, and Patent Document 1 also describes and suggests the intermediate material! Les.
  • Non-Patent Document 1 In the solid-state imaging device disclosed in Non-Patent Document 1, a synthetic resin is used as the intermediate material, and no inorganic material is used. In Non-Patent Document 1, there is a description and suggestion regarding the use of inorganic materials.
  • Patent Document 2 a resin that absorbs light having a short wavelength in the ultraviolet region and transmits visible light is used as the intermediate material.
  • a specific example of the resin is an acrylic transparent resin (product number: XLV-14S G2) manufactured by Kyoritsu Sangyo Co., Ltd.
  • Patent Document 2 does not disclose or suggest the use of inorganic materials.
  • the above-mentioned problems relating to the intermediate material also exist in the solid-state imaging device using a solid-state imaging element that does not have a micron's array.
  • the intermediate material is arranged in the gap between the flat imaging surface of the solid-state imaging device and the transparent cover.
  • Adhesive, intermediate material There are similar problems with the formation (filling) method and the adhesion method with the transparent cover.
  • the above-described problems relating to the intermediate material also exist in the solid-state imaging device having the above-mentioned cavity. That is, in this type of solid-state imaging device, since the cavity defined by the intermediate material is required to be airtight, the adhesiveness and airtightness of the intermediate material to the transparent cover, the intermediate material forming method, and There are similar problems regarding the patterning method and the adhesion method with the transparent cover.
  • the present invention has been made in consideration of these points, and the object thereof is a difficulty caused by an intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device.
  • an intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device.
  • a hygroscopicity, a thermal expansion coefficient, a refractive index for example, a hygroscopicity, a thermal expansion coefficient, a refractive index
  • a solid-state imaging device without the above-described cavity in which the arrangement of the intermediate material and the transparent cover can be easily joined, and a manufacturing method thereof are provided. There is to do.
  • Another object of the present invention is to prevent difficulties (for example, hygroscopicity and thermal expansion coefficient) due to the intermediate material disposed between the transparent cover and the imaging surface of the solid-state imaging device, and A solid-state imaging device having the above-described cavity, which has good adhesiveness and hermetic sealing with the transparent cover of the intermediate material, and is easy to arrange and pattern the intermediate material and join the transparent cover; It is in providing the manufacturing method.
  • a solid-state imaging device having no cavity is provided.
  • a solid-state imaging device in which a chip-like solid-state imaging device is sealed in a package including a transparent cover,
  • a solid-state imaging device having an imaging surface
  • a transparent cover formed to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device
  • An inorganic or inorganic-organic transparent SOG material film that covers the entire surface of the imaging surface and is disposed in the gap, The transparent cover is bonded to the transparent SOG material film directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid.
  • the solid-state imaging device is an inorganic system that covers the entire surface of the imaging surface in the gap between the imaging surface of the solid-state imaging device and the transparent cover.
  • Inorganic • Organic hybrid transparent SOG material film is provided. That is, the material (intermediate material) disposed in the gap between the imaging surface and the transparent cover is a non-organic transparent SOG material film.
  • the problems caused by the intermediate material being an organic material because of its high hygroscopicity, the internal solid-state imaging device is easily affected by moisture, the thermal expansion coefficient is large, and it is easy to peel off due to expansion / contraction It is possible to prevent such difficulties.
  • the transparent SOG material film is a film of an inorganic or inorganic / organic hybrid spin-on-glass material
  • a transparent SOG material for forming the transparent SOG material film is publicly known. It can be applied to cover the entire surface of the solid-state image sensor by the spin coating method or spray coating method, and an extremely flat surface (for example, a surface with a wave of 0 or less) is easy. Is obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface. Since the transparent SOG material forming the transparent SOG material film has fluidity, the microlens array can be easily embedded in the transparent SOG material film during application. Thereafter, when the transparent SOG material thus applied is cured by heating or the like, the transparent SOG material film covering the entire surface of the imaging surface can be obtained. Therefore, it is easy to form the transparent SOG material film, in other words, to arrange the intermediate material.
  • the transparent cover can be directly applied to the transparent SOG material film (the intermediate material) or other transparent SOG of inorganic or inorganic / organic hybrids.
  • the process of joining through the material film can be easily performed.
  • the transparent SOG material film is an inorganic system, and is a transparent amorphous silica (SiO 2) film (silica glass film).
  • SiO 2 transparent amorphous silica
  • a transparent amorphous silicate film (silicate glass film) is used.
  • the transparent SOG material film is inorganic and includes a plurality of fine bubbles (nanopores).
  • the transparent SOG material film is an inorganic porous film.
  • fine bubbles means nanometer (nm) class bubbles (nanopores).
  • the transparent SOG material film can be called an inorganic nano-porous film.
  • the size of the nanopore is preferably in the range of, for example, 10 nm to 10 4 nm, but needs to be smaller than the wavelength of light that can be imaged by the solid-state imaging device. This is because the incident light may be reflected by a portion of the nanopore that is larger than the wavelength of light that can be imaged by the nanopore! If the solid-state imaging device is for visible light, the size of the nanopore is preferably 380 nm or less. If the solid-state imaging device is for infrared light, the size of the nanopore is 3000 nm or less. I like it!
  • Examples of the inorganic porous film that can be used in this example include the above-described transparent amorphous silica film (silica glass film) and transparent amorphous silicate film (silicate glass film). However, it is not limited to these.
  • the transparent SOG material film is an inorganic / organic hybrid, and has a silica bond (Si—O—Si) as a main chain. It is a transparent film formed from a polysiloxane-based material that is formed by bonding organic components having carbon. Alternatively, fullerene (eg C) or carbon nanochu
  • an inorganic / organic hybrid amorphous silica film embedded with copper can also be used.
  • the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material is used.
  • the material film is inorganic and is a transparent amorphous silica film or a transparent amorphous silicate film.
  • a method for manufacturing a solid-state imaging device having no cavity is provided.
  • the manufacturing method of this solid-state imaging device is:
  • a method for manufacturing a solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
  • the solid-state imaging device manufacturing method according to the second aspect of the present invention is an inorganic or inorganic-organic hybrid transparent SOG so as to cover the entire imaging surface of the solid-state imaging device. After forming the material film, a transparent cover is formed on the surface of the transparent SOG material film so as to cover the entire surface of the imaging surface directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid. Join. Therefore, the solid-state imaging device according to the first aspect of the present invention can be manufactured.
  • the material (intermediate material) disposed between the transparent cover and the imaging surface is not an organic system! /, A transparent SOG material film, the intermediate material is an organic material. It is possible to prevent the above-mentioned difficulties caused by the above.
  • the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film
  • the transparent SOG material forming the transparent SOG material film may be formed by a known spin coating method or spraying method.
  • the solid-state imaging element can be coated so as to cover the entire imaging surface by a coating method, and an extremely flat surface (for example, a surface having a undulation of 0 or less) can be easily obtained. This is also Even if there are irregularities due to the microlens array on the imaging surface, it does not change.
  • the transparent SOG material forming the OG material film has fluidity, so that the microlens array can be easily embedded with the transparent SOG material film during coating. Thereafter, when the transparent SOG material thus applied is cured by heating or the like, the transparent SOG material film covering the entire surface of the imaging surface can be obtained. Therefore, it is easy to form the transparent SOG material film, in other words, to arrange the intermediate material.
  • the step of joining the transparent cover to the transparent SOG material film or the other transparent SOG material film (the intermediate material) can be easily performed.
  • the step of forming the transparent SOG material film includes a silazane compound having a Si—N (silicon nitrogen) bond.
  • amorphous silica (SiO 2) film siliconca glass film
  • the step of forming the transparent SOG material film includes Si—O (silicon oxygen) bond and Si—OH (silicon A step of forming a silicate polymer film having a hydroxyl group bond, and a step of forming a transparent amorphous silicate film by firing the silicate polymer film.
  • an inorganic transparent SOG material film (inorganic transparent porous SOG) containing a plurality of nanopores as the transparent SOG material film. Material film) is used.
  • nanopore and its preferred size are the same as those described above in (3) for the solid-state imaging device according to the first aspect of the present invention.
  • the transparent SOG material film is an inorganic / organic hybrid, and the main chain is silica bonded (Si-0).
  • Si-0 silica bonded
  • a transparent film made of a system material is used.
  • Inorganic / organic hybrid silica glass membranes embedded with bon nanotubes can also be used.
  • the transparent cover is joined to the surface of the transparent SOG material film via another transparent SOG material film.
  • an inorganic, transparent amorphous silicate film or transparent amorphous silicate film is used as the other transparent SOG material film.
  • the bonding operation of the transparent cover to the transparent inorganic SOG material film includes oxygen plasma. Performed by anodic bonding in combination.
  • a solid-state imaging device having a cavity is provided. This solid-state imaging device
  • a solid-state imaging device in which a chip-like solid-state imaging device is sealed in a package including a transparent cover,
  • a solid-state imaging device having an imaging surface
  • a transparent cover formed to cover the entire surface of the imaging surface with a gap between the imaging surface of the solid-state imaging device
  • An inorganic or inorganic / organic hybrid transparent SOG material film arranged to surround the imaging surface, disposed in the gap,
  • the transparent cover is bonded to the transparent SOG material film directly or via another transparent SOG material film of an inorganic or inorganic / organic hybrid,
  • the transparent SOG material film is formed by forming a cavity between the transparent cover and the imaging surface! /.
  • the solid-state imaging device is patterned so as to surround the imaging surface in the gap between the imaging surface of the solid-state imaging device and the transparent cover.
  • An inorganic or inorganic / organic hybrid transparent SOG material film is provided. That is, the material (intermediate material) arranged in the gap between the imaging surface and the transparent cover is a non-organic transparent SOG material film.
  • the intermediate material is an organic material. Therefore, it is possible to prevent such problems as the internal solid-state imaging device is easily affected by moisture due to its high hygroscopicity, and has a high thermal expansion rate and is easily peeled off due to expansion and contraction.
  • the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film
  • the transparent SOG material forming the transparent SOG material film may be a known spin coating method or spray coating.
  • the solid-state imaging device can be coated so as to cover the entire surface of the imaging surface by a method, and an extremely flat surface (for example, a surface having a wave of 0 or less) can be easily obtained. In addition, this does not change even if there are irregularities due to the microlens array on the imaging surface.
  • the transparent SOG material thus applied is cured by heating or the like and then patterned to form the cavity, whereby the transparent SOG material film is obtained. Therefore, it is easy to form the transparent SOG material film, in other words, to arrange and pattern the intermediate material.
  • the process of joining the transparent cover to the transparent SOG material film (the intermediate material) can be easily performed, and the transparent SOG material film By suitably selecting, good adhesion with the transparent cover and good hermetic sealing properties can be easily obtained.
  • the transparent SOG material film forms a cavity between the transparent cover and the imaging surface, the transparent SOG material film does not exist on the imaging surface in the cavity. Therefore, there is no problem caused by the refractive index of the transparent SOG material film.
  • the transparent SOG material film is inorganic and is a transparent amorphous silica (SiO 2) film (silica glass film) Or
  • a transparent amorphous silicate film (silicate glass film) is used.
  • the transparent SOG material film may be inorganic and include a plurality of fine bubbles (nanopores)!
  • OG material film is an inorganic / organic hybrid with silica bond as main chain (Si-O-Si) It is a transparent film formed from a polysiloxane-based material that is formed by bonding organic components having carbon. Alternatively, fullerene (eg C) or carbon nanochu
  • An inorganic / organic hybrid amorphous silica film embedded with copper can also be used.
  • the transparent cover is directly bonded to the transparent SOG material film, and the cavity is the transparent SOG.
  • the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the cavity is It is formed by selectively removing both the transparent SOG material film and the other transparent SOG material film.
  • the transparent cover is joined to the transparent SOG material film via another transparent SOG material film, and the other transparent SOG material is used.
  • the material film is inorganic and is a transparent amorphous silica film or a transparent amorphous silicate film.
  • the transparent cover is directly bonded to the transparent SOG material film, and the cavity is the transparent SOG.
  • the transparent cover is bonded to the transparent SOG material film via another transparent SOG material film, and the cavity is It is formed by selectively removing both the transparent SOG material film and the other transparent SOG material film.
  • a method for manufacturing a solid-state imaging device having a cavity is provided.
  • the manufacturing method of this solid-state imaging device is:
  • a method for manufacturing a solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover,
  • a transparent cover is bonded on the surface of the transparent SOG material film thus formed, directly or through another transparent SOG material film of an inorganic or inorganic-organic hybrid so as to cover the entire surface of the imaging surface.
  • the transparent SOG material film is formed by forming a cavity between the transparent cover and the imaging surface! /.
  • the method for manufacturing a solid-state imaging device is an inorganic or inorganic-organic hybrid transparent SOG so as to cover the entire imaging surface of the solid-state imaging device.
  • the transparent SOG material film is patterned so as to selectively expose the imaging surface, and then directly or on the surface of the patterned transparent SOG material film.
  • a transparent cover is bonded so as to cover the entire surface of the imaging surface through another transparent SOG material film of an inorganic / organic hybrid. Therefore, a solid-state imaging device according to the third aspect of the present invention can be manufactured.
  • the material (intermediate material) disposed between the transparent cover and the imaging surface is not organic! /, It is a transparent SOG material film, and therefore the intermediate material is an organic material. It is possible to prevent the above-mentioned difficulties caused by the above.
  • the transparent SOG material film is an inorganic or inorganic / organic hybrid spin-on-glass material film
  • the transparent SOG material for forming the transparent SOG material film may be formed by a known spin coating method or spraying.
  • the solid-state imaging element can be coated so as to cover the entire imaging surface by a coating method, and an extremely flat surface (for example, a surface having a undulation of 0 or less) can be easily obtained. This does not change even if the imaging surface has irregularities due to the microlens array.
  • the transparent SOG material thus applied is cured by heating or the like and then buffered hydrofluoric acid.
  • the desired pattern can be easily etched. Therefore, the transparent SOG material film that forms a cavity between the transparent cover and the imaging surface can be easily obtained. That is, it is easy to form the transparent SOG material film, in other words, to arrange and pattern the intermediate material. [0059] Since the surface of the transparent SOG material film is extremely flat, the process of joining the transparent cover to the transparent SOG material film (the intermediate material) can be easily performed. By suitably selecting, good adhesion to the transparent cover and good hermetic sealing can be easily obtained.
  • the step of forming the transparent SOG material film includes a silazane compound having a Si—N (silicon nitrogen) bond.
  • Forming a (SiO 2) film (silica glass film).
  • the step of forming the transparent SOG material film includes Si—O (silicon oxygen) bond and Si—OH (silicon A step of forming a silicate polymer film having a hydroxyl group bond, and a step of forming a transparent amorphous silicate film by firing the silicate polymer film.
  • the transparent SOG material film includes an inorganic transparent SOG material film (inorganic transparent porous SOG) containing a plurality of nanopores. Material film) is used.
  • inorganic transparent SOG material film inorganic transparent porous SOG
  • nanopore and its preferred size are the same as those described above in (3) for the solid-state imaging device according to the first aspect of the present invention.
  • the transparent SOG material film is an inorganic / organic hybrid, and the main chain is silica-bonded (Si-0).
  • Si-0 silica-bonded
  • an inorganic / organic hybrid silica glass film embedded with carbon nanotubes can also be used.
  • the transparent cover is joined to the surface of the transparent SOG material film via another transparent SOG material film,
  • the other transparent SOG material film is an inorganic, transparent amorphous silicon film.
  • a force film or a transparent amorphous silicate film is used.
  • the transparent cover is directly bonded to the surface of the transparent SOG material film, and the cavity force is used. It is formed by patterning so as to remove selectively.
  • the transparent cover is bonded to the surface of the transparent SOG material film via another transparent SOG material film.
  • the cavity is formed by patterning to selectively remove both the transparent SOG material film and the other transparent SOG material film.
  • the bonding operation of the transparent cover to the transparent inorganic SOG material film (the intermediate material) includes oxygen plasma. Performed by anodic bonding in combination.
  • any chip-shaped solid-state imaging device can be used as the “solid-state imaging device”.
  • a lens may or may not be included in the imaging surface of the solid-state imaging device.
  • a color filter may or may not be included.
  • the "transparent cover” is not particularly limited, and any transparent cover can be used. Polosilicate glass (B 2 O 3 / SiO 2) is preferably used.
  • This “transparent cover” is preferably a plate having moderate rigidity, for example, a plate-like porosilicate glass. This is because the joining operation with the SOG material film is facilitated.
  • transparent SOG material film means a transparent film formed of SOG material
  • SOG material means a glass material that can be formed by spin coating.
  • an inorganic or inorganic / organic hybrid transparent SOG material film is used.
  • amorphous silica is used in automobiles, ships, houses, It is known as a coating material used in various fields such as electronic equipment for purposes such as antifouling, antifouling, foundation protection, electrical insulation, and flattening.
  • a polymer of a silazane compound having a Si—N (silicon-nitrogen) bond polysilazane, polysilazane
  • perhydropolysilazane perhydropolysilazane
  • H hydrogen
  • silica'-based glassy film disclosed in "Method for producing silica-based glassy film and coating agent used therefor" according to Japanese Patent No. 3254473 (JP 2001-10844) is also used. Is possible.
  • This glassy film is obtained by heating a liquid containing silicon alkoxide, a volatile organic acid, and a volatile non-aqueous organic solvent, and volatilizing the organic acid and the organic solvent to obtain a highly viscous liquid obtained. It is obtained by applying to a substrate and curing at 200 ° C or lower.
  • examples of the inorganic porous film that can be used in the present invention include a transparent amorphous silica film (silica glass film) and a transparent amorphous silicate film (silicate glass film).
  • a transparent amorphous silica film silicon glass film
  • a transparent amorphous silicate film silicate glass film
  • spherical microporous silica porous particles disclosed in JP-A-2004-182492 and Spherical micropore silica porous particles disclosed in “Production method” can also be used. These spherical micropore silica porous particles are obtained using non-toxic, biodegradable nonionic surfactants and inexpensive alkali silicates as silica sources, and have a pore diameter of 2 nm or less. With a pore volume of 0.25 ml / g or more, a BET specific surface area force of S600 m 2 / g or more, a C constant by BET analysis method of 450 or more, and a spherical particle with a particle size of 20 to 500 mm is there.
  • inorganic / organic hybrid materials that form a transparent SOG material film.
  • the transparent SOG material is mainly composed of an inorganic component and the organic component is bound to the inorganic component, Anything can be used.
  • a polysiloxane material having a silica bond (Si—O—Si) as the main chain and an organic component having carbon (for example, a methyl group) bonded thereto can be suitably used.
  • Such polysiloxane inorganic / organic hybrid materials are provided by Suzuka Fuji Xerox Co., Ltd.
  • silica glass (siloxane) in which fullerene is embedded can also be used. This is because a silicon derivative obtained by hydrosilylating triethoxysilane to fullerene (e.g. C)
  • Anodic bonding is generally known as a method in which glass and silicon, metal, or the like are superposed and bonded tightly by applying heat and voltage.
  • the principle is that, at the same time as heating, a voltage is applied with the glass side as the cathode and the silicon side as the anode, so that the cations in the glass are forcibly diffused to the cathode side, and electrostatic is generated between the glass and silicon.
  • attractive force is generated to promote adhesion, and glass and silicon are chemically reacted to join.
  • the difficulty caused by the intermediate material disposed between the ⁇ transparent cover and the imaging surface of the solid-state imaging device for example, hygroscopicity and thermal expansion coefficient.
  • the arrangement and transparency of the intermediate material The effect that joining with a cover is easy is acquired.
  • the difficulty for example, hygroscopicity and thermal expansion coefficient
  • the intermediate material disposed between the ⁇ transparent cover and the imaging surface of the solid-state imaging device is eliminated.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention.
  • FIG. 2 (a) is an external view of the front surface side of the solid-state imaging device according to the first embodiment of the present invention, and (b) is an external view of the back surface side thereof.
  • FIG. 3 is a schematic plan view of a silicon wafer on which a plurality of solid-state imaging devices according to the first embodiment of the present invention are formed.
  • FIG. 4 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step.
  • FIG. 5 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 6 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG.
  • FIG. 7 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 8 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 9 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 10 is a partial cross-sectional view showing the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 11 is a partial cross-sectional view showing the method for manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 12 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 13 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each process, and is a continuation of FIG.
  • FIG. 14 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention for each step, and is a continuation of FIG.
  • FIG. 15 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a second embodiment of the present invention.
  • FIG. 16 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a fourth embodiment of the present invention.
  • FIG. 17 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a fifth embodiment of the present invention.
  • FIG. 18 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a sixth embodiment of the present invention.
  • FIG. 19 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a seventh embodiment of the present invention.
  • FIG. 20 is a cross-sectional view showing a schematic configuration of a solid-state imaging apparatus according to an eighth embodiment of the present invention.
  • FIG. 21 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each step.
  • FIG. 22 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each process, and is a continuation of FIG.
  • FIG. 23 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the eighth embodiment of the present invention for each process, and is a continuation of FIG.
  • FIG. 24 is a partial cross-sectional view showing the method of manufacturing the solid-state imaging device according to the eighth embodiment of the invention for each step, and is a continuation of FIG.
  • FIG. 25 is a cross-sectional view showing a schematic configuration of a solid-state imaging device according to a ninth embodiment of the present invention.
  • FIG. 26] is an external view of the surface side of the solid-state imaging device according to the eighth embodiment of the present invention.
  • FIG. 1 is a cross-sectional view showing a schematic configuration of the solid-state imaging device 1 according to the first embodiment of the present invention
  • FIG. 2 is an external view of the front surface side
  • FIG. 3 is an external view of the back side.
  • the solid-state imaging device 1 is formed by sealing a chip-shaped solid-state imaging device 10 in a chip size package (CSP) including a transparent glass cover 60.
  • This solid-state imaging device 1 does not have a cavity in the gap between the imaging surface 25 and the glass cover 60.
  • the solid-state imaging device 10 includes a silicon substrate 11 having a plurality of light receiving elements (not shown) and a plurality of light receiving regions 23 formed on the surface region. One light receiving region 23 and one light receiving element are formed for each pixel PX.
  • the silicon substrate 11 has its entire surface A transparent interlayer insulating film 12 is formed so as to cover the surface.
  • the surface of the interlayer insulating film 12 is the imaging surface 25 of the solid-state imaging device 10, and a plurality of microlenses 22 arranged in an array, that is, a microlens array 22A is formed.
  • One microlens 22 is formed for each pixel PX in the imaging surface 25 shape.
  • Each light receiving region 23 is arranged so as to overlap with the corresponding microlens 22 through the interlayer insulating film 12.
  • microfilters (color filters) 24 for three colors of R, G, and B (or four colors obtained by adding black to these three colors) are formed.
  • a plurality of surface electrodes 15 are formed on the surface of the interlayer insulating film 12 in the region outside the microlens array 22A (the peripheral region of the imaging surface 25). These surface electrodes 15 are used to draw out electrical signals generated by the respective light receiving elements to the outside of the solid-state imaging device 1, and lead wires (on the surface of the silicon substrate 11 and the interlayer insulating film 12 ( It is electrically connected to each light receiving element (each light receiving area 23) via a not shown.
  • the imaging surface 25 has irregularities caused by the microlens 22 and the surface electrode 15.
  • the interlayer insulating film 12 is actually a force composed of a plurality of stacked insulating films.
  • the internal structure of the interlayer insulating film 12 is not important for the present invention. ing.
  • a transparent inorganic nanoporous SOG material film 50 is formed on the surface of the interlayer insulating film 12 and covers the entire surface of the interlayer insulating film 12. Since the thickness of the nanoporous SOG material film 50 is larger than the thickness of both the microlens 22 and the surface electrode 15, the microlens array 22A and the surface electrode 15 are embedded in the nanoporous SOG material film 50. Therefore, the surface of the nanoporous SOG material film 50 is flat.
  • a transparent glass cover 60 is formed on the surface of the nanoporous SOG material film 50.
  • the glass cover 60 is composed of a transparent polosilicate glass (B 2 O 3 / SiO 2) plate.
  • the glass plate is joined to the surface of the nanoporous SOG material film 50 by “anodic bonding” to be integrated with the chip-like solid-state imaging device 10.
  • each conductive plug 13 is covered with an insulating film 16a formed on the inner wall of the corresponding through hole, and each conductive plug 13 and the silicon substrate 11 are electrically connected by the corresponding insulating film 16a. Insulated.
  • the upper and lower ends of each conductive plug 14 are in contact with the surface electrode 15 directly above and the conductive plug 13 immediately below the surface electrode 15, respectively.
  • each conductive plug 13 is exposed from the back surface of the silicon substrate 11.
  • the conductive plugs 14 and 13 brought into contact with each other pass through the silicon substrate 1 through the surface electrode on the surface of the interlayer insulating film 12 of the silicon substrate 1 and the wiring film 18 on the back surface of the silicon substrate 1.
  • a through electrode that is electrically interconnected is formed.
  • An insulating film 16b is formed on the back surface of the silicon substrate 11, and covers the region excluding the exposed lower end of the conductive plug 13.
  • a plurality of wiring films 18 are formed on the surface of the insulating film 16b. Each wiring film 18 is in contact with the lower end of the corresponding conductive plug 13 exposed on the back surface of the silicon substrate 11.
  • a solder resist 17 is formed on the surface of the insulating film 16b so as to cover the wiring film 18.
  • the solder resist 17 is formed with through holes at positions overlapping with the respective wiring films 18, and the conductive contacts 19 are filled in the through holes.
  • solder resist 17 On the surface of the solder resist 17, a copper paste 20 patterned in a predetermined shape is formed at a position overlapping with each conductive contact 19. A solder ball 21 as an external electrode is formed on each copper paste 20.
  • each surface electrode 15 is connected to the back surface of the solid-state imaging device 1 (the bottom surface in FIG. 1) via the corresponding conductive plugs 14 and 13 and the corresponding wiring film 18 and conductive contact 19. ) Are electrically connected to the corresponding copper paste 20 and the board 21.
  • the above-described solid-state imaging device 10 includes a microlens array formed on the imaging surface 25.
  • Array 22A may not contain. Further, the solid-state imaging device 10 described above does not need to include the force microfilter 24 including the microfilter 24.
  • Each process of the manufacturing method described below is performed at the wafer level.
  • a plurality of solid-state imaging devices 1 are simultaneously formed on a silicon wafer 70 as shown in FIG. It is formed.
  • the silicon wafer 70 is diced along the scribing line 71 formed in a grid shape to separate the solid-state imaging devices 1 from each other.
  • the chip-shaped solid-state imaging device 1 shown in FIGS. 1 to 3 is manufactured.
  • only the single solid-state imaging device 1 is shown and described here.
  • the solid-state imaging device 10 having the above-described configuration is prepared.
  • This solid-state imaging device 10 has been confirmed to be a non-defective product through a predetermined test.
  • 4 shows a single solid-state image pickup device 10.
  • a plurality of solid-state image pickup devices 10 are arranged on the silicon wafer 70.
  • a nanoporous SOG material film 50 is formed on the surface of the silicon substrate 11, more specifically on the surface of the interlayer insulating film 12 (imaging surface 25).
  • This process is performed by applying the SOG material by spin coating (or spraying) in the atmosphere at room temperature.
  • a coating film of SOG material is formed.
  • the thickness of this coating is the microlens
  • the thickness is such that all of the array 22A and the surface electrode 15 can be embedded.
  • the surface of the nanoporous SOG material film 50 becomes extremely flat (for example, a surface with a wave of 0 ⁇ l rn or less).
  • the coating film of the SOG material is heated to be cured, and at that time, it reacts with moisture and oxygen in the air to change into a transparent amorphous silica (SiO 2) film (silica glass film).
  • SiO 2 transparent amorphous silica
  • Amorphous silica film that does not contain such nanopores can also be used.
  • an amorphous silica film containing nanopores is used in order to lower the refractive index of the amorphous silica film and approach the refractive index of air. Therefore, the nanoporous SOG material film 50 has a large number of nanopores (nanoscale pores). These nanopores are made of porous amorphous silica fine powder (fine amorphous silica porous particles) on the SOG material. )) • Can be obtained easily by mixing. As described above, the specific method is disclosed in Tosoh Research and Technical Report Vol. 45 (2001), pages 65 to 69 and JP-A 2004-182492!
  • the size (diameter) of the nanopore is preferably in the range of, for example, 10 nm to 10 4 nm, but needs to be smaller than the wavelength of light that can be imaged by the solid-state imaging device 10. This is because the incident light may be reflected by the nanopore, which is larger than the wavelength of the light that can be captured by the nanopore! If the solid-state image sensor 10 is for visible light, the nanopore size is preferably 380 nm or less. If the solid-state image sensor 10 is for infrared light, the nanopore size should be 3000 nm or less. I like it!
  • nanoporous SOG material film 50 made of transparent amorphous silica is obtained.
  • the silicon substrate 11 having the structure shown in FIG. 5 is carried into the chamber (not shown) of the anodic bonding apparatus, and the silicon substrate 11 is chucked by electrostatic force. Hold on 81.
  • the porosilicate glass plate 61 is held on the upper chuck 82 by the electrostatic force. This porosilicate glass plate 61 actually has the same size and the same shape as the silicon wafer 70. That is, the porosilicate glass plate 61 is actually a glass wafer.
  • oxygen (O 2) plasma is generated in the chamber, and
  • the surface 50a of the nanoporous SOG material film 50 and the surface 61a of the polysilicate glass plate 61 are brought into contact with each other, and a predetermined pressure is applied using the lower chuck 81 and the upper chuck 82.
  • a predetermined pressure is applied using the lower chuck 81 and the upper chuck 82.
  • anodic bonding of the nanoporous SOG material film 50 and the polysilicate glass plate 61 is performed in the presence of oxygen plasma.
  • the voltage is applied so that the silicon substrate 11 serves as an anode and the polysilicate glass plate 61 serves as a cathode.
  • the nanoporous SOG material film 50 and the porosilicate glass plate 61 are firmly bonded at the bonding surface 83, that is, at the bonding portion between the surface 50a of the nanoporous SOG material film 50 and the surface 61a of the porosilicate glass plate 61.
  • the thinned silicon substrate 11 is selectively etched from the back surface side, and through-holes 31 penetrating the silicon substrate 11 as shown in FIG. Are formed.
  • the upper end of the through hole 31 reaches the back surface of the interlayer insulating film 12.
  • These through holes 31 are formed immediately below each surface electrode 15.
  • This process can be performed by etching such as RIE (Reactive Ion Etching) and ICE (Inductively Coupled Etching). However, it may be performed by a method such as laser processing or anodization.
  • the silicon substrate 11 is selectively etched again from the back surface side, and a plurality of through holes 32 penetrating the interlayer insulating film 12 are formed as shown in FIG. Individual, form.
  • the upper end of the through hole 32 reaches the back surface of the front electrode 15. 32 of these through holes
  • the formation position is directly under each surface electrode 15 and overlaps each through hole 31.
  • This step may also be performed by a method such as force S that can be performed by etching such as RIE or ICE, laser processing, or anodization.
  • Each through hole 32 communicates with a corresponding through hole 31.
  • the silicon substrate 11 is thermally oxidized to form silicon dioxide films (SiO 2) as insulating films 16 a and 16 b on the exposed surface of the silicon substrate 11 as shown in FIG. Insulating film 16a
  • the inner wall of the through hole 31 is covered.
  • the insulating film 16b covers the entire back surface of the silicon substrate 11 except for the portion where the through hole 31 is provided.
  • the through holes 31 and 32 are filled with polysilicon, and conductive plugs 13 and 14 are formed.
  • This step can be performed by depositing polysilicon on the back surface of the silicon substrate 11 by CVD (Chemical Vapor Deposition) and then etching it back.
  • the thickness of the polysilicon deposited should be such that the through holes 31 and 32 are filled with polysilicon.
  • a patterned wiring film 18 is formed on the surface of the insulating film 16b.
  • Each wiring film 18 is in contact with the corresponding conductive plug 13.
  • This step can be performed by selectively forming a metal film by sputtering, plating, paste, or the like.
  • solder resist 17 is formed on the surface of the insulating film 16b to cover the wiring film 18. Then, a through hole is formed in a predetermined portion of the solder resist 17, and then a conductive material is embedded therein to form a conductive contact 19. Each conductive contact 19 is in contact with the corresponding wiring film 18. Note that the surface of the solder resist 17 is flattened. The state at this time is as shown in FIG.
  • a plurality of patterned copper pastes 20 are formed on the surface of the solder resist 17. Each copper paste 20 is in contact with a corresponding conductive contact 19. Thereafter, solder balls 21 are formed on each copper paste 20.
  • the silicon wafer 70 is diced along the scribing lines 71 formed in a grid pattern. Are separated from each other. Thus, the solid-state imaging device 1 shown in FIG. 1 is obtained. [0119] In the actual manufacturing process, after that, the entire side surface of the solid-state imaging device 1 is covered with an insulating synthetic resin (not shown) constituting a part of the CSP. Thus, the manufacturing process is completed.
  • the solid-state imaging device 1 has the microlens in the gap between the microlens array 22A of the solid-state imaging element 10 and the transparent glass cover 60. 'Transparent inorganic nanoporous SOG material film covering the entire surface of Array 22A (imaging surface 25) 5
  • the film 50 (intermediate material) disposed in the gap between the microlens array 22A (imaging surface 25) and the glass cover 60 is a transparent inorganic nanoporous SOG material film that does not contain organic substances. .
  • the intermediate material is an organic material, for example, because of its high hygroscopicity, the internal solid-state imaging device 1 is easily affected by moisture. Use force S to prevent difficult points.
  • the nanoporous SOG material is a spin-on-glass material
  • the microlens array 22A (imaging surface 25) is covered on the solid-state imaging device 10 by a known spin coating method or spray coating method. It is possible to apply. At this time, it is also easy to embed the microlens array 22A in the nanoporous SOG material. Thereafter, when the nanoporous SOG material is heated and cured, a transparent inorganic nanoporous SOG material film 50 covering the entire surface of the microlens array 22A is obtained. Therefore, the arrangement
  • the transparent inorganic nanoporous SOG material film 50 and the transparent glass cover 60 are bonded to each other by anodic bonding! /, The work of bonding the transparent glass cover 60 is also easy.
  • n l. 4 to 1.3.
  • by including nanopores in the n 1. It is lowered to about 2. Therefore, no problem occurs in terms of refractive index.
  • the solid-state imaging device 1 of the first embodiment is hermetically sealed as a whole. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material film 50, and the gap is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment. [0125] (Second Embodiment)
  • FIG. 15 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1A according to the second embodiment of the present invention.
  • the solid-state imaging device 1A of the present embodiment instead of the transparent nanoporous SOG material film 50, two transparent nanoporous SOG material films 50a and 50b and a transparent synthetic resin film 51 sandwiched between them are provided.
  • the configuration is the same as that of the solid-state imaging device 1 according to the first embodiment having no cavity except for the points provided and the points except for the microlens 22 and the microfilter 24. Therefore, the same reference numerals as those of the solid-state imaging device 1 according to the first embodiment shown in FIG. In FIG. 15, a solid-state imaging device that does not have the microlens 22 and the microfilter 24 is indicated by 10 ′.
  • the same nanoporous SOG material film 50a as the nanoporous SOG material 50 of the solid-state imaging device 1 of the first embodiment is formed on the surface (imaging surface 25) of the interlayer insulating film 12 of the silicon substrate 11. is doing.
  • a thin synthetic resin film 51 is formed on the surface of the nanoporous SOG material film 50a, and then a nanoporous SOG material film 50b (which corresponds to another transparent SOG material film) is formed on the surface.
  • the materials of the nanoporous SOG material films 50a and 50b may be the same or different. Although the refractive index is slightly increased, a porous non-porous SOG film may be used instead of one or both of the nanoporous SOG material films 50a and 50b.
  • polyimideamidosilane or the like can be used as the synthetic resin film 51.
  • the number of nanoporous SOG material films can be arbitrarily adjusted as necessary.
  • the solid-state imaging device 1A of the second embodiment is hermetically sealed as a whole. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material films 50a and 50b, and the gap is completely sealed. In addition, the effect of using the thin synthetic resin film 51 is negligible. Therefore, first Similar to the solid-state imaging device 1 of the embodiment, there is an advantage that it is hardly affected by the external environment.
  • the solid-state imaging device is an inorganic 'organic hybrid transparent SOG material film, instead of the transparent nanoporous SOG material film 50 used in the solid-state imaging device 1 of the first embodiment described above.
  • the other configuration and manufacturing method are the same as those in the first embodiment. Therefore, the description about the structure and manufacturing method is omitted.
  • the inorganic / organic hybrid material used in the third embodiment has a silica bond (Si-0-Si) as the main chain, and an organic component (for example, a methyl group) having carbon bonded thereto.
  • an organic component for example, a methyl group
  • polysiloxane materials provided by Suzuka Fuji Xerox Co., Ltd.
  • other inorganic / organic hybrid materials can be used as long as they are transparent SOG materials mainly composed of inorganic components and organic components bonded to the inorganic components.
  • Inorganic / organic hybrid materials are materials that can make use of the characteristics of both inorganic and organic materials, so the performance required for intermediate materials placed between the imaging surface 25 and the glass cover 60 is required. There is an advantage that it is easy to select a material suitable for.
  • the solid-state imaging device of the third embodiment is hermetically sealed as a whole, and therefore has the advantage of being hardly affected by the external environment, like the solid-state imaging device 1 of the first embodiment.
  • FIG. 16 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1B according to the fourth embodiment of the present invention.
  • the solid-state imaging device 1B of the present embodiment is the same as that of the solid-state imaging device 1A according to the second embodiment (see FIG. 15), which is a transparent composite sandwiched between two transparent nanoporous SOG material films 50a and 50b.
  • a synthetic resin film 52 is formed thereon, and a known BPSG film 50c is formed thereon. Except for this point, the configuration is the same as that of the solid-state imaging device 1 of the first embodiment.
  • a thin synthetic resin film 52 is formed on the surface of the nanoporous SOG material film 50b, and then a BPSG film 50c is formed on the surface.
  • the BPSG film 50c used here is a silicate glass film containing boron and phosphorus, and is one of the SOG material films.
  • the intermediate material disposed (filled) in the gap between the imaging surface 25 and the glass cover 60 may have a three-layer structure including the three SOG material films 50a, 50b, and 50c! /.
  • This three-layer structure is realized, for example, as follows. First, an SOG material for the nanoporous SOG material film 50a is applied on the imaging surface 25 of the solid-state imaging device 10 so as to have a predetermined film thickness by spin coating, and then cured by heating or the like to be nanoporous. SOG material film 50a. Subsequently, after forming a thin synthetic resin film 51 on the surface of the nanoporous SOG material film 50a, the SOG material for the nanoporous SOG material film 50b is applied so as to have a predetermined film thickness by a spin coating method. This is cured by heating or the like to form a nanoporous SOG material film 50b.
  • the SOG material for the BPSG film 50c is applied to a predetermined film thickness by a spin coating method, and then heated.
  • the BPSG film 50c is cured by the above. Thereafter, the glass cover 60 is adhered to the surface of the BPSG film 50c.
  • the solid-state imaging device 1B of the fourth embodiment is hermetically sealed as a whole. That is, the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with the nanoporous SOG material films 50a and 50b and the BPSG film 50c, and the gap is completely sealed. In addition, the effect of using the thin synthetic resin films 51 and 52 is negligible. Therefore, like the solid-state imaging device 1 of the first embodiment, there is an advantage that it is hardly affected by the external environment.
  • FIG. 17 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1C according to the fifth embodiment of the present invention.
  • the solid-state imaging device 1C of the present embodiment is the same except that the glass cover 60 is bonded to the surface of the nanoporous SOG material film 50b via a relatively thick and transparent synthetic resin film 53.
  • the configuration is the same as that of the solid-state imaging device 1 A according to the second embodiment.
  • the synthetic resin film 53 has an action as an adhesive, it can be said that the glass cover 60 is adhered to the surface of the nanoporous SOG material film 50b by the synthetic resin film 53. . In this case, there is an advantage that it is not necessary to use the “anodic bonding” used in the first embodiment. Since the influence on the refractive index caused by interposing the synthetic resin film 53 is negligible, the use of the synthetic resin film 53 does not cause any trouble in terms of imaging performance.
  • the solid-state imaging device 1C according to the fifth embodiment is configured so that the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60 is filled with nanoporous SOG material films 50a and 50b. It cannot be said that it is sealed. That is, it cannot be said to be hermetic sealing. This is because a relatively thick synthetic resin film 53 is used, and moisture may enter through the synthetic resin film 53. As described above, the solid-state imaging device 1C is somewhat susceptible to the influence of the external environment as compared with the solid-state imaging devices of the first to fourth embodiments described above, but the glass cover 60 is bonded by using the synthetic resin film 53. There is a U point.
  • FIG. 18 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1D according to the sixth embodiment of the present invention. Unlike the solid-state imaging devices according to the first to fifth embodiments described above, the solid-state imaging device 1D has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.
  • the solid-state imaging device 1D of the sixth embodiment has a configuration in which a cavity 55 is added to the solid-state imaging device 1A of the second embodiment (see FIG. 15) b. That is, the nanoporous SOG material film 50a located close to the imaging surface 25 of the solid-state imaging device 10 and the synthetic resin film 51 adjacent to the nanoporous SOG material film 51 are selectively removed, and the cavity 55 is formed at the place where both are removed. is doing.
  • the planar shape of the cavity 55 is a rectangle (see Fig. 25).
  • the cavity 55 is formed as follows. First, the nanoporous SOG material film 50a is formed by applying an SOG material for the nanoporous SOG material film 50a on the imaging surface 25 and then curing it. Next, the nanoporous SOG material film 50a is selectively etched to expose the microlens array 22A. On the other hand, joining glass cover 60 A nanoporous SOG material film 50b is formed by applying an SOG material for the nanoporous SOG material film 50b on the side plane and then curing it.
  • the cavity 55 is formed in the gap between the imaging surface 25 and the glass cover 60. Since the nanoporous SOG material films 50a and 50b are firmly bonded by the synthetic resin film 51, the hermetic sealing performance of the bonded surfaces is good.
  • the interior of the cavity 55 is filled with air or nitrogen gas, if necessary, or kept at a predetermined level of vacuum (low vacuum). This can be easily realized by performing the bonding process of the glass cover 60 to the solid-state imaging device 10 in the atmosphere, nitrogen gas, or vacuum atmosphere.
  • the solid-state imaging device 1D has a solid-state imaging device.
  • the inorganic transparent SOG material films 50a and 50b patterned so as to surround the imaging surface 25 are arranged in the gap between the 10 imaging surfaces 25 and the glass cover 60. That is, the material (intermediate material) disposed in the gap between the imaging surface 25 and the glass cover 60 is a non-organic transparent SOG material film 50a and 50b.
  • the intermediate material is an organic material, for example, because of its high hygroscopicity, the internal solid-state imaging device 10 is easily affected by moisture, the thermal expansion coefficient is large, and it peels off due to expansion and contraction. It is possible to prevent difficulties such as easy.
  • the transparent SOG material film 50a is an inorganic spin-on-glass material film
  • the transparent SOG material forming the transparent SOG material film 50a is solid-state imaged by a known spin coating method or spray coating method. It is possible to apply so as to cover the entire imaging surface 25 of the element 10, and an extremely flat surface (for example, a surface having a wave of 0 or less) can be easily obtained. This does not change even if the imaging surface 25 has irregularities due to the microlens array 22A. Thereafter, the transparent SOG material 50a thus applied is cured by heating or the like and then patterned to form the cavity 55, whereby the transparent SOG material film 50a is obtained.
  • the transparent SOG material film 50b is also a film of an inorganic spin-on-glass material
  • the transparent SOG material forming the transparent SOG material film 50b is covered with a glass cover by a known spin coating method or spray coating method. It is possible to apply to the entire surface of 60 joining sides, and an extremely flat surface (for example, a surface having a wave of 0 .; 1 in or less) can be easily obtained. Thereafter, the transparent SOG material film 50b can be obtained by curing the coated transparent SOG material 50b by heating or the like.
  • the process of joining the transparent SOG material film 50b on the glass force bar 60 to the transparent SOG material film 50a can be easily performed and is transparent.
  • good adhesion to the glass cover 60 and good hermetic sealing can be easily obtained.
  • the cavity 55 is hermetically sealed. That is, the nanoporous SOG material films 50a and 50b are arranged in the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60, and the cavity 55 is formed by partially removing the nanoporous SOG material film 50b. Therefore, Cavity 55 is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.
  • the cavity 55 is partially removed by removing only the nanoporous SOG material film 50a disposed in the gap between the imaging surface 25 of the solid-state imaging device 10 and the glass cover 60. Forming force The present invention is not limited to this.
  • the cavity 55 may be formed by partially removing both of the nanoporous SOG material films 50a and 50b (see the ninth embodiment in FIG. 25).
  • FIG. 19 is a cross-sectional view showing a schematic configuration of a solid-state imaging device 1E according to the seventh embodiment of the present invention.
  • This solid-state imaging device 1E also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.
  • the solid-state imaging device 1E of the seventh embodiment is similar to the solid-state imaging device 1D of the sixth embodiment (see Fig. 18). In this configuration, the synthetic resin film 51, the microlens 22 and the microfilter 24 are removed. The nanoporous SOG material film 50a on the solid-state imaging device 10 ′ side and the nanoporous SOG material film 50b on the glass cover 60 side are directly joined without using an adhesive.
  • the nanoporous SOG material films 50a and 50b that are firmly bonded without using the synthetic resin film 51 acting as an adhesive and obtain a desired hermetic sealing property are, for example, the above-mentioned " Examples include amorphous silica films obtained by “PHPS polysilazane coating” (provided by Etascia Ltd.), phosphorus-doped amorphous silica films, and boron'phosphorus-doped amorphous silica films formed with nanopores.
  • the cavity 55 is hermetically sealed, as in the case of the sixth embodiment. Therefore, there is an advantage that it is hardly affected by the external environment.
  • FIG. 20 is a cross-sectional view showing a schematic configuration of the solid-state imaging device 1F according to the eighth embodiment of the present invention.
  • This solid-state imaging device 1F also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60. As shown in FIG. 26, a rectangular cavity 55 exists on the surface of the solid-state imaging device 1F via a transparent glass cover 60.
  • the solid-state imaging device 1F of the eighth embodiment corresponds to a configuration in which the nanoporous SOG material film 50b and the synthetic resin film 51 are removed from the solid-state imaging device 1D of the sixth embodiment (see FIG. 18). That is, the glass cover 60 and the SOG material film 54 on the solid-state imaging device 10 side are directly joined without using an adhesive. However, it differs from the nanoporous SOG material film 50b in that the SOG material film 54 is not nanoporous. This is because the SOG material film 54 is selectively removed so as to expose the micro lens array 22A, in other words, to form the cavity 55, so that incident light is transmitted through the SOG material film 54. This is because the SOG material film 54 does not have to be nanoporous in order to reduce the refractive index. However, it goes without saying that the SOG material film 54 may be nanoporous.
  • the configuration of the solid-state imaging device 1F of the eighth embodiment is the same as that of the solid-state imaging device 1 of the first embodiment. It can also be said that this corresponds to a configuration in which the nanoporous SOG material film 50 is replaced with a non-nanoporous SOG material film 54 and a cavity 55 is further added.
  • the SOG material film 54 that is firmly bonded to the glass cover 60 without using a synthetic resin film acting as an adhesive and obtains a desired hermetic sealing property
  • the above-mentioned " Examples include amorphous silica films obtained by “PHPS polysilazane coating” (provided by Etascia Ltd.), phosphorus-doped amorphous silica films, and boron'phosphorus-doped amorphous silica films.
  • the structure shown in FIG. 21 (this corresponds to the structure shown in FIG. 5), that is, the solid-state imaging element 10a before the through electrode is formed.
  • a structure in which the SOG material film 54 is formed on the imaging surface 25 with a predetermined thickness is obtained.
  • the SOG material film 54 has a thickness that allows the microlens array 22A and the surface electrode 15 to be embedded therein.
  • a mask 56 patterned to have a planar shape of the cavity 55 is formed on the surface of the SOG material film 54.
  • the SOG material film 54 is selectively etched away by, for example, buffered hydrofluoric acid (BHF).
  • BHF buffered hydrofluoric acid
  • the microlens 22 and the interlayer insulating film 12 formed of an organic material are advantageous because they are not affected by the etching action.
  • the microlens array 22A is exposed, and the surface electrode 15 is embedded in the SOG material film 54.
  • a polysilicate glass plate 61 is bonded to the surface of the patterned SOG material film 54.
  • the state at this time is as shown in FIG.
  • This bonding may be performed by the “anodic bonding” used in the first embodiment, but the materials of the SOG material film 54 and the glass cover 60 are selected so as to obtain good adhesion and desired hermetic sealing. If combined, it is possible to join directly by a method other than “anodic bonding”.
  • a fusion bonding method of an A1-Ge alloy brazing material that adheres to a glass material and exhibits strong characteristics, a fusion bonding of low melting point lead glass, and the like can be used.
  • the subsequent steps are the same as those in the first embodiment. That is, the glass cover 60 On the surface opposite to the bonding surface 83, the laminated body composed of the silicon substrate 11, the SOG material film 54, and the porosilicate glass plate 61 is attached to the handling holder 84 using the adhesive 85, and then the silicon substrate. Each step of forming a thin plate 11, forming a through electrode on the silicon substrate 11, and forming a solder ball 21 as an external electrode is performed. Thus, the structure shown in FIG. 24 (this corresponds to the structure shown in FIG. 14) is obtained.
  • the silicon wafer 70 is diced along the scribing line 71 formed in a grid shape, and the solid-state imaging devices 1F are mutually connected. Separated. In this way, the solid-state imaging device 1F having the configuration shown in FIGS. 20 and 25 is obtained.
  • the cavity 55 is hermetically sealed.
  • the non-nanoporous SOG material film 54 is disposed in the gap between the strongly bonded imaging surface 25 and the glass force bar 60, and the SOG material film 54 is partially removed to form the cavity 55. Therefore, the cavity 5 5 is completely sealed. Therefore, there is an advantage that it is hardly affected by the external environment.
  • FIG. 25 is a cross-sectional view showing a schematic configuration of the solid-state imaging device 1G according to the ninth embodiment of the present invention.
  • This solid-state imaging device 1G also has a cavity 55 in the gap between the imaging surface 25 and the glass cover 60.
  • the solid-state imaging device 1G of the ninth embodiment includes the nanoporous SOG material films 50a and 50b in the solid-state imaging device 1D of the sixth embodiment (see FIG. 18).
  • the cavity 55 is formed by partially removing both.
  • Other configurations are the same as those of the solid-state imaging device 1D of the sixth embodiment.
  • the height (thickness) force of the cavity 55 is equal to the sum of the film thicknesses of the nanoporous SOG material films 50a and 50b.
  • the distance to the imaging surface 25 is longer than that of the solid-state imaging device 1D of the sixth embodiment. Yes.
  • Such a cavity 55 can be easily obtained by continuously etching both nanoporous SOG material films 50a and 5Ob using the same mask. For example, if buffered hydrofluoric acid (BHF) is used as an etchant, such etching can be easily realized.
  • BHF buffered hydrofluoric acid
  • the cavity 55 is hermetically sealed.
  • nanoporous SOG material films 50a and 50b are stacked in the gap between the firmly bonded imaging surface 25 and glass cover 60, and these nanoporous SOG material films 50a and 50b are selected. Therefore, the cavity 55 is completely sealed because the cavity 55 is formed. Therefore, there is an advantage that it is hardly affected by the external environment.
  • the force solder ball 21 provided with the solder ball 21 on the back surface of the same device as the external electrode of the solid-state imaging device may not be provided.
  • the copper paste 20 becomes a gear part electrode.
  • the position force of the solder ball 21 as the external electrode is displaced inward from the through electrode (conductive plugs 13 and 14). However, the position may overlap with the through electrode or the outside of the through electrode. You can move to
  • the configuration of the solid-state imaging device is arbitrary, and may or may not have a lens (microlens) or a color filter (microfilter). Industrial applicability
  • the present invention can be applied to any solid-state imaging device in which a chip-shaped solid-state imaging device is sealed in a package including a transparent cover.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un dispositif d'imagerie à semi-conducteurs permettant d'éliminer les problèmes dûs au dépôt d'un matériau entre un revêtement transparent et une surface d'imagerie, d'agencer facilement ledit matériau et de lier facilement le revêtement transparent, et un procédé de production dudit dispositif d'imagerie à l'état solide. Un revêtement en verre (transparent) (60) est formé afin de recouvrir la totalité d'une surface d'imagerie (25), un espace étant ménagé entre le revêtement et l'élément d'imagerie (10) à l'état solide doté d'une surface d'imagerie (25). Dans cet espace, on dépose par centrifugation (SOG) un film transparent de matériau en verre, hybride inorganique ou inorganique-organique (par exemple, un film transparent de matériau SOG (50)) et nanoporeux. Le revêtement en verre (60) est lié au film en matériau SOG transparent, ledit film étant par exemple un film transparent en silice amorphe ou un film en silicate amorphe comprenant ou non des nanopores, ou un film de matériau hybride inorganique-organique.
PCT/JP2007/067658 2006-09-11 2007-09-11 Dispositif d'imagerie à semi-conducteurs et son procédé de production WO2008032706A1 (fr)

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