JP2008066446A - 半導体積層構造および半導体素子 - Google Patents

半導体積層構造および半導体素子 Download PDF

Info

Publication number
JP2008066446A
JP2008066446A JP2006241409A JP2006241409A JP2008066446A JP 2008066446 A JP2008066446 A JP 2008066446A JP 2006241409 A JP2006241409 A JP 2006241409A JP 2006241409 A JP2006241409 A JP 2006241409A JP 2008066446 A JP2008066446 A JP 2008066446A
Authority
JP
Japan
Prior art keywords
semiconductor layer
conductivity type
type semiconductor
layer
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006241409A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008066446A5 (enExample
Inventor
Chihiro Arai
千広 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006241409A priority Critical patent/JP2008066446A/ja
Publication of JP2008066446A publication Critical patent/JP2008066446A/ja
Publication of JP2008066446A5 publication Critical patent/JP2008066446A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Element Separation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2006241409A 2006-09-06 2006-09-06 半導体積層構造および半導体素子 Pending JP2008066446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006241409A JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006241409A JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Publications (2)

Publication Number Publication Date
JP2008066446A true JP2008066446A (ja) 2008-03-21
JP2008066446A5 JP2008066446A5 (enExample) 2009-10-01

Family

ID=39288897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006241409A Pending JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Country Status (1)

Country Link
JP (1) JP2008066446A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153515A (ja) * 2008-12-24 2010-07-08 Sony Corp フォトダイオードを形成した半導体装置及びその製造方法並びに光ディスク装置
JP2018518838A (ja) * 2015-12-29 2018-07-12 同方威視技術股▲分▼有限公司 同一面電極のフォトダイオードアレイ及びその製造方法
JP2022143820A (ja) * 2021-03-18 2022-10-03 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260715A (ja) * 1996-03-25 1997-10-03 Sanyo Electric Co Ltd ホトダイオード内蔵半導体集積回路
JPH1168146A (ja) * 1997-08-18 1999-03-09 Sony Corp 受光素子を有する半導体装置とその製造方法
JP2000312021A (ja) * 1999-04-26 2000-11-07 Sony Corp 半導体装置とその製造方法
JP2003282848A (ja) * 2002-03-22 2003-10-03 Fujitsu Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260715A (ja) * 1996-03-25 1997-10-03 Sanyo Electric Co Ltd ホトダイオード内蔵半導体集積回路
JPH1168146A (ja) * 1997-08-18 1999-03-09 Sony Corp 受光素子を有する半導体装置とその製造方法
JP2000312021A (ja) * 1999-04-26 2000-11-07 Sony Corp 半導体装置とその製造方法
JP2003282848A (ja) * 2002-03-22 2003-10-03 Fujitsu Ltd 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153515A (ja) * 2008-12-24 2010-07-08 Sony Corp フォトダイオードを形成した半導体装置及びその製造方法並びに光ディスク装置
US8803272B2 (en) 2008-12-24 2014-08-12 Sony Corporation Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
US20140319643A1 (en) * 2008-12-24 2014-10-30 Sony Corporation Semiconductor device provided with photodiode, manufacturing method thereof, and optical disc device
JP2018518838A (ja) * 2015-12-29 2018-07-12 同方威視技術股▲分▼有限公司 同一面電極のフォトダイオードアレイ及びその製造方法
US10411051B2 (en) 2015-12-29 2019-09-10 Nuctech Company Limited Coplanar electrode photodiode array and manufacturing method thereof
JP2022143820A (ja) * 2021-03-18 2022-10-03 株式会社東芝 半導体装置
JP7487131B2 (ja) 2021-03-18 2024-05-20 株式会社東芝 半導体装置

Similar Documents

Publication Publication Date Title
JP4046067B2 (ja) 固体撮像素子の製造方法
JP6045136B2 (ja) 光電変換装置
US6433374B1 (en) Light receiving device with built-in circuit
US20100301442A1 (en) Optical semiconductor device
US20100163941A1 (en) Image sensor and method for manufacturing the same
JP2001345436A (ja) 回路内蔵受光素子
KR20100107995A (ko) 광 픽업용 광 검출기 집적회로의 포토 다이오드 셀 구조 및그 제조방법
TW535286B (en) Circuit-incorporating light receiving device
US20090261441A1 (en) Optical semiconductor device
WO2020121858A1 (ja) 光検出装置及び光検出装置の製造方法
TWI307968B (enExample)
JP4816603B2 (ja) 固体撮像素子の製造方法
JP4083553B2 (ja) 光半導体装置
JP4858367B2 (ja) 固体撮像素子の製造方法
JP2008066446A (ja) 半導体積層構造および半導体素子
JP2005045125A (ja) 光検出素子の製造方法
JP2008117952A (ja) 半導体装置
JP2005109048A (ja) 光半導体集積回路装置の製造方法
JP2010098239A (ja) 光半導体装置及び光半導体装置の製造方法
JP4043246B2 (ja) 光半導体集積回路装置
JP2005109047A (ja) 光半導体集積回路装置及びその製造方法
JP2018142581A (ja) 半導体装置の製造方法、半導体装置
US20080099872A1 (en) Inductive load driving circuit
JP4100474B2 (ja) 光半導体装置及びその製造方法
JP3504114B2 (ja) 回路内蔵受光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090819

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090819

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120321

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120703

A072 Dismissal of procedure [no reply to invitation to correct request for examination]

Free format text: JAPANESE INTERMEDIATE CODE: A072

Effective date: 20121016

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130205

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130604