JP2018518838A - 同一面電極のフォトダイオードアレイ及びその製造方法 - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 abstract description 16
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- 238000002955 isolation Methods 0.000 abstract description 12
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- 229910052581 Si3N4 Inorganic materials 0.000 description 27
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
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Abstract
Description
Claims (15)
- 複数の同一面電極のフォトダイオードを含む同一面電極のフォトダイオードアレイであって、
各同一面電極のフォトダイオードは、
第1導電型高濃度ドーピングの半導体基材と、
第1導電型高濃度ドーピングの半導体基材上に形成された第1導電型低濃度ドーピングの半導体層と、
前記第1導電型低濃度ドーピングの半導体層の上部に形成された第2導電型高濃度ドーピングの半導体領域であって、前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型低濃度ドーピングの半導体層とでPN接合のダイオードが形成され、かつ、前記第2導電型高濃度ドーピングの半導体層から光線入射側で第2電極が引き出された第2導電型高濃度ドーピングの半導体領域と、
前記第2導電型高濃度ドーピングの半導体領域を囲む第1導電型高濃度ドーピングの半導体領域であって、前記第1導電型高濃度ドーピングの半導体領域から光線入射側で第1電極が引き出された第1導電型高濃度ドーピングの半導体領域と、
前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型高濃度ドーピングの半導体領域との間に設けられたトレンチ構造と、を備える、
同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、一種の絶縁材料、複数種の複合絶縁材料、または光線反射材料によってトレンチが充填されて形成される、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、第1導電型の高濃度ドーピングの単結晶半導体または多結晶半導体の材料によってトレンチが充填されて形成される、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、前記トレンチの周りに第1導電型の高濃度ドーピング領域が形成されている、
請求項2に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、充填されていないトレンチを含み、かつ、トレンチの底部および側壁に単一絶縁層、多層の複合絶縁層または光線反射材料が被覆されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - トレンチの周りに第1導電型の高濃度ドーピング領域が形成され、トレンチの底部および側壁に単一絶縁層、多層の複合絶縁層または光線反射材料が被覆されている、
請求項5に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、トレンチを含み、かつ、トレンチの底部および側壁に一種の絶縁材料、複数種の複合絶縁材料、または光線反射材料が被覆された後、トレンチが単結晶半導体材料または多結晶半導体材料によって充填されて構成されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - トレンチに充填されている単結晶半導体材料または多結晶半導体材料は、第2電極に対して、高電位に接続されている、
請求項7に記載の同一面電極のフォトダイオードアレイ。 - 第2導電型高濃度ドーピングの半導体領域の上部に、比較的に薄い第1導電型高濃度ドーピング領域または第2導電型低濃度トーピング領域が形成され、その周りが前記第2導電型高濃度ドーピング領域に囲まれている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピング領域の下部に、連続する第1導電型高濃度ドーピング領域が形成され、または、第2導電型高濃度ドーピング領域の下方のみに第1導電型高濃度ドーピング領域が設けられている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピング領域の下方に、連続する絶縁材料領域が形成され、または、前記第2導電型高濃度ドーピング領域の下方のみに絶縁材料領域が設けられている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第1導電型高濃度ドーピング領域は、トレンチ構造として形成され、下方に向かって前記第1導電型高濃度ドーピング領域または絶縁材料領域まで延びてそれと接続されている、
請求項10または11に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピング領域の下方に、連続する絶縁層付きの伝導構造が形成され、または、前記第2導電型高濃度ドーピング領域の下方のみに絶縁層付きの伝導構造が設けられており、該伝導構造は絶縁材料または半導体材料から構成されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第1導電型高濃度ドーピング領域は、トレンチ構造であり、下方に向かって絶縁層付きの伝導構造における半導体材料の領域まで延びてそれと接続されている、
請求項13に記載の同一面電極のフォトダイオードアレイ。 - 同一面電極のフォトダイオードを製造する方法であって、
第1導電型高濃度ドーピングの半導体基材上に第1導電型低濃度ドーピングの半導体層を形成するステップと、
前記第1導電型低濃度ドーピングの半導体層の上部に、第2導電型高濃度ドーピングの半導体領域を形成し、前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型低濃度ドーピングの半導体層とでPN接合のダイオードを形成し、かつ前記第2導電型高濃度ドーピングの半導体層から光線入射側で第2電極を引き出すステップと、
前記第2導電型高濃度ドーピングの半導体領域を囲んで第1導電型高濃度ドーピングの半導体領域を形成し、かつ前記第1導電型高濃度ドーピングの半導体領域から光線入射側で第1電極を引き出すステップと、
前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型高濃度ドーピングの半導体領域との間にトレンチ構造を設けるステップと、を含む方法。
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CN105448945B (zh) | 2019-07-05 |
JP6577601B2 (ja) | 2019-09-18 |
EP3399552A4 (en) | 2019-08-07 |
US20180342542A1 (en) | 2018-11-29 |
WO2017113846A1 (zh) | 2017-07-06 |
CN105448945A (zh) | 2016-03-30 |
EP3399552B1 (en) | 2021-06-30 |
EP3399552A1 (en) | 2018-11-07 |
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