JP6577601B2 - 同一面電極のフォトダイオードアレイ及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 352
- 239000000463 material Substances 0.000 claims description 66
- 239000011810 insulating material Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002131 composite material Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 15
- 238000011049 filling Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 43
- 239000000969 carrier Substances 0.000 description 38
- 229910052581 Si3N4 Inorganic materials 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- 230000005684 electric field Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910052732 germanium Inorganic materials 0.000 description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 230000007704 transition Effects 0.000 description 13
- 238000002955 isolation Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 230000009471 action Effects 0.000 description 9
- 239000011800 void material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Description
Claims (15)
- 複数の同一面電極のフォトダイオードを含む同一面電極のフォトダイオードアレイであって、
各同一面電極のフォトダイオードは、
第1導電型高濃度ドーピングの半導体基材と、
前記第1導電型高濃度ドーピングの半導体基材上に形成された第1導電型低濃度ドーピングの半導体層と、
前記第1導電型低濃度ドーピングの半導体層の上部に形成された第2導電型高濃度ドーピングの半導体領域であって、前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型低濃度ドーピングの半導体層とでPN接合のダイオードが形成され、かつ、前記第2導電型高濃度ドーピングの半導体領域から光線入射側で第2電極が引き出された第2導電型高濃度ドーピングの半導体領域と、
前記第2導電型高濃度ドーピングの半導体領域を囲む第1導電型高濃度ドーピングの半導体領域であって、前記第1導電型高濃度ドーピングの半導体領域から光線入射側で前記第2電極と同一面に位置する第1電極が引き出された第1導電型高濃度ドーピングの半導体領域と、
前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型高濃度ドーピングの半導体領域との間に設けられたトレンチ構造と、を備え、
前記トレンチ構造は、前記第2導電型高濃度ドーピングの半導体領域と同一面に位置する第1部分を含み、
前記トレンチ構造の前記第1部分は、前記第1導電型低濃度ドーピングの半導体層を間に挟んで、前記第2導電型高濃度ドーピングの半導体領域を囲んでおり、
前記第1導電型高濃度ドーピングの半導体領域は、前記第1部分と同一面に位置する第2部分を含む、
同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、一種の絶縁材料、複数種の複合絶縁材料、または光線反射材料によってトレンチが充填されて形成される、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、第1導電型の高濃度ドーピングの単結晶半導体または多結晶半導体の材料によってトレンチが充填されて形成される、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、前記トレンチの周りに第1導電型の高濃度ドーピング領域が形成されている、
請求項2に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、充填されていないトレンチを含み、かつ、トレンチの底部および側壁に単一絶縁層、多層の複合絶縁層または光線反射材料が被覆されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - トレンチの周りに第1導電型の高濃度ドーピング領域が形成され、トレンチの底部および側壁に単一絶縁層、多層の複合絶縁層または光線反射材料が被覆されている、
請求項5に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチ構造は、トレンチを含み、かつ、トレンチの底部および側壁に一種の絶縁材料、複数種の複合絶縁材料、または光線反射材料が被覆された後、トレンチが単結晶半導体材料または多結晶半導体材料によって充填されて構成されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記トレンチに充填されている単結晶半導体材料または多結晶半導体材料は、前記第2電極に対して、高電位に接続されている、
請求項7に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピングの半導体領域の上部に、比較的に薄い第1導電型高濃度ドーピング領域または第2導電型低濃度ドーピング領域が形成され、その周りが前記第2導電型高濃度ドーピングの半導体領域に囲まれている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピングの半導体領域の下部に、連続する第1導電型高濃度ドーピング領域が形成され、または、前記第2導電型高濃度ドーピングの半導体領域の下方のみに第1導電型高濃度ドーピング領域が設けられている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピングの半導体領域の下方に、連続する絶縁材料領域が形成され、または、前記第2導電型高濃度ドーピングの半導体領域の下方のみに絶縁材料領域が設けられている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第1導電型高濃度ドーピングの半導体領域は、トレンチ構造として形成され、下方に向かって前記第1導電型高濃度ドーピング領域または絶縁材料領域まで延びてそれと接続されている、
請求項10に記載の同一面電極のフォトダイオードアレイ。 - 前記第2導電型高濃度ドーピングの半導体領域の下方に、連続する絶縁層付きの伝導構造が形成され、または、前記第2導電型高濃度ドーピングの半導体領域の下方のみに絶縁層付きの伝導構造が設けられており、該伝導構造は絶縁材料または半導体材料から構成されている、
請求項1に記載の同一面電極のフォトダイオードアレイ。 - 前記第1導電型高濃度ドーピングの半導体領域は、トレンチ構造であり、下方に向かって絶縁層付きの伝導構造における半導体材料の領域まで延びてそれと接続されている、
請求項13に記載の同一面電極のフォトダイオードアレイ。 - 同一面電極のフォトダイオードを製造する方法であって、
第1導電型高濃度ドーピングの半導体基材上に第1導電型低濃度ドーピングの半導体層を形成するステップと、
前記第1導電型低濃度ドーピングの半導体層の上部に、第2導電型高濃度ドーピングの半導体領域を形成し、前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型低濃度ドーピングの半導体層とでPN接合のダイオードを形成し、かつ前記第2導電型高濃度ドーピングの半導体領域から光線入射側で第2電極を引き出すステップと、
前記第2導電型高濃度ドーピングの半導体領域を囲んで第1導電型高濃度ドーピングの半導体領域を形成し、かつ前記第1導電型高濃度ドーピングの半導体領域から光線入射側で前記第2電極と同一面に位置する第1電極を引き出すステップと、
前記第2導電型高濃度ドーピングの半導体領域と前記第1導電型高濃度ドーピングの半導体領域との間にトレンチ構造を設けるステップと、を含み、
前記トレンチ構造は、前記第2導電型高濃度ドーピングの半導体領域と同一面に位置する第1部分を含み、
前記トレンチ構造の前記第1部分は、前記第1導電型低濃度ドーピングの半導体層を間に挟んで、前記第2導電型高濃度ドーピングの半導体領域を囲んでいる、方法。
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WO2019144443A1 (zh) | 2018-01-26 | 2019-08-01 | 中国科学院大气物理研究所 | 一种双线二极管阵列器件及粒子速度测量方法和测量装置 |
CN108562762B (zh) * | 2018-01-26 | 2020-03-27 | 中国科学院大气物理研究所 | 一种基于双线阵的海洋飞沫测量装置及方法 |
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CN105448945B (zh) * | 2015-12-29 | 2019-07-05 | 同方威视技术股份有限公司 | 同面电极光电二极管阵列及其制作方法 |
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Also Published As
Publication number | Publication date |
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EP3399552B1 (en) | 2021-06-30 |
CN105448945B (zh) | 2019-07-05 |
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