JP2008066446A5 - - Google Patents

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Publication number
JP2008066446A5
JP2008066446A5 JP2006241409A JP2006241409A JP2008066446A5 JP 2008066446 A5 JP2008066446 A5 JP 2008066446A5 JP 2006241409 A JP2006241409 A JP 2006241409A JP 2006241409 A JP2006241409 A JP 2006241409A JP 2008066446 A5 JP2008066446 A5 JP 2008066446A5
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JP
Japan
Prior art keywords
conductivity type
semiconductor layer
type semiconductor
layer
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006241409A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008066446A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006241409A priority Critical patent/JP2008066446A/ja
Priority claimed from JP2006241409A external-priority patent/JP2008066446A/ja
Publication of JP2008066446A publication Critical patent/JP2008066446A/ja
Publication of JP2008066446A5 publication Critical patent/JP2008066446A5/ja
Pending legal-status Critical Current

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JP2006241409A 2006-09-06 2006-09-06 半導体積層構造および半導体素子 Pending JP2008066446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006241409A JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006241409A JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Publications (2)

Publication Number Publication Date
JP2008066446A JP2008066446A (ja) 2008-03-21
JP2008066446A5 true JP2008066446A5 (enExample) 2009-10-01

Family

ID=39288897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006241409A Pending JP2008066446A (ja) 2006-09-06 2006-09-06 半導体積層構造および半導体素子

Country Status (1)

Country Link
JP (1) JP2008066446A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5131181B2 (ja) 2008-12-24 2013-01-30 ソニー株式会社 半導体装置の製造方法
CN105448945B (zh) * 2015-12-29 2019-07-05 同方威视技术股份有限公司 同面电极光电二极管阵列及其制作方法
JP7487131B2 (ja) * 2021-03-18 2024-05-20 株式会社東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260715A (ja) * 1996-03-25 1997-10-03 Sanyo Electric Co Ltd ホトダイオード内蔵半導体集積回路
JP3975515B2 (ja) * 1997-08-18 2007-09-12 ソニー株式会社 受光素子を有する半導体装置とその製造方法
JP2000312021A (ja) * 1999-04-26 2000-11-07 Sony Corp 半導体装置とその製造方法
JP4342142B2 (ja) * 2002-03-22 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体受光素子

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