JP2008060564A - 異なる熱安定性の抵抗材料を有する電気ヒューズ - Google Patents

異なる熱安定性の抵抗材料を有する電気ヒューズ Download PDF

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Publication number
JP2008060564A
JP2008060564A JP2007212538A JP2007212538A JP2008060564A JP 2008060564 A JP2008060564 A JP 2008060564A JP 2007212538 A JP2007212538 A JP 2007212538A JP 2007212538 A JP2007212538 A JP 2007212538A JP 2008060564 A JP2008060564 A JP 2008060564A
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JP
Japan
Prior art keywords
region
fuse
silicon
metal silicide
nisi
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Pending
Application number
JP2007212538A
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English (en)
Japanese (ja)
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JP2008060564A5 (enExample
Inventor
Katsura Miyashita
桂 宮下
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of JP2008060564A publication Critical patent/JP2008060564A/ja
Publication of JP2008060564A5 publication Critical patent/JP2008060564A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2007212538A 2006-08-17 2007-08-17 異なる熱安定性の抵抗材料を有する電気ヒューズ Pending JP2008060564A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/465,188 US20080067629A1 (en) 2006-08-17 2006-08-17 Electrical Fuse Having Resistor Materials Of Different Thermal Stability

Publications (2)

Publication Number Publication Date
JP2008060564A true JP2008060564A (ja) 2008-03-13
JP2008060564A5 JP2008060564A5 (enExample) 2009-10-01

Family

ID=39187704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007212538A Pending JP2008060564A (ja) 2006-08-17 2007-08-17 異なる熱安定性の抵抗材料を有する電気ヒューズ

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US (1) US20080067629A1 (enExample)
JP (1) JP2008060564A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829645B2 (en) * 2008-06-12 2014-09-09 International Business Machines Corporation Structure and method to form e-fuse with enhanced current crowding
US7881093B2 (en) * 2008-08-04 2011-02-01 International Business Machines Corporation Programmable precision resistor and method of programming the same
US8035191B2 (en) * 2008-12-02 2011-10-11 United Microelectronics Corp. Contact efuse structure
US7960809B2 (en) * 2009-01-16 2011-06-14 International Business Machines Corporation eFuse with partial SiGe layer and design structure therefor
DE102009055368A1 (de) * 2009-12-29 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Siliziumbasiertes Halbleiterbauelement mit E-Sicherungen, die durch eine eingebettete Halbleiterlegierung hergestellt sind
DE102010030765B4 (de) 2010-06-30 2018-12-27 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε und Präzisions-eSicherungen, die in dem aktiven Halbleitermaterial hergestellt sind, und Herstellungsverfahren
US8896088B2 (en) 2011-04-27 2014-11-25 International Business Machines Corporation Reliable electrical fuse with localized programming
US8969999B2 (en) * 2011-10-27 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same
US9570571B1 (en) 2015-11-18 2017-02-14 International Business Machines Corporation Gate stack integrated metal resistors
US9698212B2 (en) 2015-11-30 2017-07-04 International Business Machines Corporation Three-dimensional metal resistor formation
US10032716B2 (en) * 2016-03-28 2018-07-24 International Business Machines Corporation Advanced E-fuse structure with controlled microstructure
US9859209B2 (en) 2016-03-28 2018-01-02 International Business Machines Corporation Advanced e-Fuse structure with enhanced electromigration fuse element
US9893012B2 (en) 2016-03-28 2018-02-13 International Business Machines Corporation Advanced e-fuse structure with hybrid metal controlled microstructure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643758A (en) * 1979-09-17 1981-04-22 Fujitsu Ltd Semiconductor device
JP2008004571A (ja) * 2006-06-20 2008-01-10 Matsushita Electric Ind Co Ltd ポリシリコンヒューズ及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958523B2 (en) * 2000-09-15 2005-10-25 Texas Instruments Incorporated On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits
KR100495023B1 (ko) * 2000-12-28 2005-06-14 가부시끼가이샤 도시바 반도체 장치 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643758A (en) * 1979-09-17 1981-04-22 Fujitsu Ltd Semiconductor device
JP2008004571A (ja) * 2006-06-20 2008-01-10 Matsushita Electric Ind Co Ltd ポリシリコンヒューズ及びその製造方法

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Publication number Publication date
US20080067629A1 (en) 2008-03-20

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