JP2008053701A5 - - Google Patents

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Publication number
JP2008053701A5
JP2008053701A5 JP2007194010A JP2007194010A JP2008053701A5 JP 2008053701 A5 JP2008053701 A5 JP 2008053701A5 JP 2007194010 A JP2007194010 A JP 2007194010A JP 2007194010 A JP2007194010 A JP 2007194010A JP 2008053701 A5 JP2008053701 A5 JP 2008053701A5
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JP
Japan
Prior art keywords
layer
conductive layer
metal oxide
memory element
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007194010A
Other languages
English (en)
Japanese (ja)
Other versions
JP5377839B2 (ja
JP2008053701A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007194010A priority Critical patent/JP5377839B2/ja
Priority claimed from JP2007194010A external-priority patent/JP5377839B2/ja
Publication of JP2008053701A publication Critical patent/JP2008053701A/ja
Publication of JP2008053701A5 publication Critical patent/JP2008053701A5/ja
Application granted granted Critical
Publication of JP5377839B2 publication Critical patent/JP5377839B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007194010A 2006-07-28 2007-07-26 半導体装置 Expired - Fee Related JP5377839B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007194010A JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006206685 2006-07-28
JP2006206685 2006-07-28
JP2007194010A JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013197741A Division JP5632945B2 (ja) 2006-07-28 2013-09-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2008053701A JP2008053701A (ja) 2008-03-06
JP2008053701A5 true JP2008053701A5 (OSRAM) 2010-08-12
JP5377839B2 JP5377839B2 (ja) 2013-12-25

Family

ID=39237397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007194010A Expired - Fee Related JP5377839B2 (ja) 2006-07-28 2007-07-26 半導体装置

Country Status (1)

Country Link
JP (1) JP5377839B2 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN101878507B (zh) * 2008-09-30 2013-10-23 松下电器产业株式会社 电阻变化元件的驱动方法、初始处理方法及非易失性存储装置
JP2021082653A (ja) * 2019-11-15 2021-05-27 富士通株式会社 スイッチ素子及びスイッチ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6847047B2 (en) * 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
JP4912671B2 (ja) * 2004-11-26 2012-04-11 株式会社半導体エネルギー研究所 半導体装置
JP4869613B2 (ja) * 2005-03-25 2012-02-08 株式会社半導体エネルギー研究所 記憶装置、及び記憶装置の作製方法
JP5201853B2 (ja) * 2006-03-10 2013-06-05 株式会社半導体エネルギー研究所 半導体装置

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