JP2008053657A5 - - Google Patents
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- JP2008053657A5 JP2008053657A5 JP2006231202A JP2006231202A JP2008053657A5 JP 2008053657 A5 JP2008053657 A5 JP 2008053657A5 JP 2006231202 A JP2006231202 A JP 2006231202A JP 2006231202 A JP2006231202 A JP 2006231202A JP 2008053657 A5 JP2008053657 A5 JP 2008053657A5
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- alkyl group
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- hydrogen atom
- fluorine
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Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006231202A JP5014709B2 (ja) | 2006-08-28 | 2006-08-28 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
| KR1020097006217A KR101457715B1 (ko) | 2006-08-28 | 2007-07-11 | 저유전율 비정질 실리카계 피막의 형성 방법 및, 상기 방법으로 얻어지는 저유전율 비정질 실리카계 피막 |
| PCT/JP2007/063788 WO2008026387A1 (en) | 2006-08-28 | 2007-07-11 | Method of forming amorphous silica coating of low dielectric constant and amorphous silica coating of low dielectric constant obtained thereby |
| US12/310,486 US8227028B2 (en) | 2006-08-28 | 2007-07-11 | Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film |
| EP07790592A EP2073254B1 (en) | 2006-08-28 | 2007-07-11 | Method of forming amorphous silica coating of low dielectric constant and amorphous silica coating of low dielectric constant obtained thereby |
| TW096131670A TWI484558B (zh) | 2006-08-28 | 2007-08-27 | A method of forming a low dielectric constant amorphous silica-based film, and a low dielectric constant amorphous silica-based film obtained by the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006231202A JP5014709B2 (ja) | 2006-08-28 | 2006-08-28 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008053657A JP2008053657A (ja) | 2008-03-06 |
| JP2008053657A5 true JP2008053657A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2009-09-24 |
| JP5014709B2 JP5014709B2 (ja) | 2012-08-29 |
Family
ID=39135674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006231202A Expired - Fee Related JP5014709B2 (ja) | 2006-08-28 | 2006-08-28 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
Country Status (6)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0674501B2 (ja) * | 1985-02-27 | 1994-09-21 | 大阪大学長 | 電子線による異種原子の固体内注入方法 |
| JP5299605B2 (ja) * | 2007-11-19 | 2013-09-25 | 日揮触媒化成株式会社 | 低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜 |
| US8258251B2 (en) * | 2007-11-30 | 2012-09-04 | The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration | Highly porous ceramic oxide aerogels having improved flexibility |
| US8314201B2 (en) | 2007-11-30 | 2012-11-20 | The United States Of America As Represented By The Administration Of The National Aeronautics And Space Administration | Highly porous ceramic oxide aerogels having improved flexibility |
| JP5551885B2 (ja) * | 2008-05-01 | 2014-07-16 | 日揮触媒化成株式会社 | 低誘電率シリカ系被膜の形成方法及び該方法から得られる低誘電率シリカ系被膜 |
| US9580867B2 (en) | 2013-04-26 | 2017-02-28 | Pacific Nano Products, Inc. | Fibrous structured amorphous silica including precipitated calcium carbonate, compositions of matter made therewith, and methods of use thereof |
| CN111965753A (zh) * | 2019-08-13 | 2020-11-20 | 斯特里特技术有限公司 | 直径减小的光纤 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6256574A (ja) * | 1985-09-04 | 1987-03-12 | Mitsubishi Heavy Ind Ltd | 薄膜の形成方法 |
| JP2752968B2 (ja) * | 1987-05-07 | 1998-05-18 | 東京応化工業株式会社 | シリカ系被膜の形成法 |
| JPH0764543B2 (ja) * | 1987-07-24 | 1995-07-12 | 富士デヴィソン化学株式会社 | 球状シリカ及びその製法 |
| US5167716A (en) * | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
| JPH11256106A (ja) | 1998-03-09 | 1999-09-21 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造法、シリカ系被膜及び半導体装置 |
| WO2000013221A1 (en) | 1998-08-27 | 2000-03-09 | Alliedsignal Inc. | Process for optimizing mechanical strength of nanoporous silica |
| US6599846B2 (en) | 1999-12-28 | 2003-07-29 | Catalysts & Chemicals Industries Co., Ltd. | Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film |
| US6406794B1 (en) * | 2001-02-08 | 2002-06-18 | Jsr Corporation | Film-forming composition |
| JP4363824B2 (ja) * | 2002-08-12 | 2009-11-11 | 旭化成株式会社 | 層間絶縁用薄膜 |
| JP4225765B2 (ja) * | 2002-10-31 | 2009-02-18 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
| JP4471564B2 (ja) * | 2002-10-31 | 2010-06-02 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法 |
| JP2005116830A (ja) | 2003-10-08 | 2005-04-28 | Mitsui Chemicals Inc | 多孔質シリカの製造方法、多孔質シリカおよびその用途 |
| KR100508696B1 (ko) * | 2003-12-01 | 2005-08-17 | 학교법인 서강대학교 | 구리배선용 초저유전 절연막 |
| JP2005330376A (ja) * | 2004-05-20 | 2005-12-02 | Jsr Corp | 環状オレフィン系重合体のフィルムまたはシートの製造方法 |
| EP1615260A3 (en) * | 2004-07-09 | 2009-09-16 | JSR Corporation | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device |
| JP4756128B2 (ja) * | 2004-10-20 | 2011-08-24 | 日揮触媒化成株式会社 | 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜 |
| JP2006117763A (ja) | 2004-10-20 | 2006-05-11 | Catalysts & Chem Ind Co Ltd | 低誘電率非晶質シリカ系被膜形成用塗布液、その調製方法およびこれより得られる低誘電率非晶質シリカ系被膜 |
| US8686101B2 (en) * | 2005-12-22 | 2014-04-01 | Jgc Catalysts And Chemicals Ltd. | Coating liquid for forming low dielectric constant amorphous silica-based coating film and the coating film obtained from the same |
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2006
- 2006-08-28 JP JP2006231202A patent/JP5014709B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-11 WO PCT/JP2007/063788 patent/WO2008026387A1/ja active Application Filing
- 2007-07-11 KR KR1020097006217A patent/KR101457715B1/ko not_active Expired - Fee Related
- 2007-07-11 EP EP07790592A patent/EP2073254B1/en not_active Ceased
- 2007-07-11 US US12/310,486 patent/US8227028B2/en not_active Expired - Fee Related
- 2007-08-27 TW TW096131670A patent/TWI484558B/zh not_active IP Right Cessation