JP2008034473A - Surface light source - Google Patents
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Abstract
Description
本発明は、複数の無機系発光素子を用いた照明装置及び液晶表示装置のバックライト光源として利用される面状光源に関する。 The present invention relates to an illumination device using a plurality of inorganic light-emitting elements and a planar light source used as a backlight light source of a liquid crystal display device.
近年、青色ＬＥＤ（Ｌｉｇｈｔ−Ｅｍｉｔｔｉｎｇ−Ｄｉｏｄｅ：発光ダイオード）の実用化と共に、青色ＬＥＤチップと青色ＬＥＤチップを封止する封止樹脂に蛍光体を含有させたＬＥＤランプにより白色光源を得られるようになった。ＬＥＤランプによる白色光源は、従来の光源である白熱灯や蛍光灯と比較して、寿命が長く、消費電力が少ないので、次世代の照明器具として期待されている。また、ＬＥＤランプは、短小化が容易であるため、液晶ディスプレイのバックライト等に利用されている。 In recent years, with the practical application of blue LEDs (Light-Emitting Diodes), a white light source can be obtained with a blue LED chip and an LED lamp containing a phosphor in a sealing resin for sealing the blue LED chip. became. A white light source using an LED lamp is expected as a next-generation lighting fixture because it has a longer life and less power consumption than incandescent lamps and fluorescent lamps, which are conventional light sources. Moreover, since LED lamps can be easily shortened, they are used for backlights of liquid crystal displays.
液晶ディスプレイのバックライトでは、特に、白色光源の薄型化が要求されている。従来、ＬＥＤランプをマザーボード上に複数配置した面状光源が用いられていた。しかしながら、ＬＥＤランプの厚みにより面状光源の厚みが制限されるため、更なる薄型化は困難であった。 In the backlight of a liquid crystal display, a thin white light source is particularly required. Conventionally, a planar light source in which a plurality of LED lamps are arranged on a mother board has been used. However, since the thickness of the planar light source is limited by the thickness of the LED lamp, further reduction in thickness has been difficult.
一方、側面発光型のＬＥＤランプと導光体とを組合わせ面状光源が実用化されている。このような面状光源では、ＬＥＤランプから導光体に白色光を入射させる際に、光のロスが大きいという問題があった。 On the other hand, a planar light source is put to practical use by combining a side-emitting LED lamp and a light guide. With such a planar light source, there is a problem in that light loss is large when white light is incident on the light guide from the LED lamp.
これらの問題を解決するために、マザーボード上に複数のＬＥＤチップを搭載したチップオンボード型の面状光源が開発されている（例えば、特許文献１参照。）。
チップオンボード型の面状光源では、複数のＬＥＤチップに対して各々ワイヤボンディングを行わなければならないため、製造工程が煩雑あるという問題があった。また、表裏両面に表示部を有する液晶表示装置においては、表面用と裏面用にそれぞれ１つの面状光源が必要であった。そのため、このような両面表示型の液晶表示装置の薄型化は困難であった。 The chip-on-board planar light source has a problem in that the manufacturing process is complicated because wire bonding must be performed for each of the plurality of LED chips. Further, in a liquid crystal display device having display portions on both front and back surfaces, one surface light source is required for each of the front surface and the back surface. Therefore, it has been difficult to reduce the thickness of such a double-sided display type liquid crystal display device.
本発明は、以上のような問題点を鑑みてなされたものであって、薄型化を図ることができ、製造工程が簡便な面状光源を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a planar light source that can be thinned and has a simple manufacturing process.
上記の課題は、光透過性を有する一対のフレキシブル基板と、前記一対のフレキシブル基板に挟まれて搭載された複数の無機系発光素子とを有することを面状光源により解決される。 The above problem is solved by a planar light source having a pair of light-transmitting flexible substrates and a plurality of inorganic light-emitting elements mounted between the pair of flexible substrates.
本発明の面状光源によれば、その厚みは、無機系発光素子と一対のフレキシブル基板の厚み若しくは無機系発光素子を封止する封止部とフレキシブル基板の厚みのみに依存するため、厚みを薄くすることができる。 According to the planar light source of the present invention, the thickness depends on only the thickness of the inorganic light emitting element and the pair of flexible substrates or the thickness of the sealing portion for sealing the inorganic light emitting element and the flexible substrate. Can be thinned.
また、光透過性の一対のフレキシブル基板、又は、光透過性のフレキシブル基板と光透過性の封止部により面状光源を形成するので、面状光源の表裏面から発光する。そのため、両面表示型の液晶ディスプレイに用いても厚さが嵩むことはなく、薄型の両面表示型の液晶ディスプレイを製造することができる。 In addition, since the planar light source is formed by a pair of light transmissive flexible substrates, or a light transmissive flexible substrate and a light transmissive sealing portion, light is emitted from the front and back surfaces of the surface light source. Therefore, even if it is used for a double-sided display type liquid crystal display, the thickness does not increase, and a thin double-sided display type liquid crystal display can be manufactured.
さらに、フレキシブル基板を用いることにより、衝撃や熱応力が発生してもフレキシブル基板でこれらを吸収することができるので、高信頼性の面状光源を得ることができる。 Furthermore, by using a flexible substrate, even if an impact or thermal stress occurs, these can be absorbed by the flexible substrate, so that a highly reliable planar light source can be obtained.
以下に、図面に基づいて、本発明を実施するための最良の形態について説明する。
（第１の実施の形態）
図１（ａ），（ｂ）は、本発明の第１の実施の形態の面状光源を示す図であり、図１（ａ）は断面図であり、図１（ｂ）は正面図である。
The best mode for carrying out the present invention will be described below with reference to the drawings.
(First embodiment)
1A and 1B are views showing a planar light source according to a first embodiment of the present invention, FIG. 1A is a cross-sectional view, and FIG. 1B is a front view. is there.
本実施の形態の面状光源は、互いに対向し、かつ両側に電極を有する複数のＬＥＤ１１Ｂチップと、ＬＥＤチップ１１Ｂを上下から挟んでＬＥＤチップ１１Ｂと電気的に接続する一対のフレキシブル基板１０ａ，１０ｂと、フレキシブル基板に挟まれた領域を充填する充填層１５を備えている。 The planar light source of the present embodiment includes a plurality of LED 11B chips facing each other and having electrodes on both sides, and a pair of flexible substrates 10a and 10b that are electrically connected to the LED chip 11B with the LED chip 11B sandwiched from above and below. And a filling layer 15 filling a region sandwiched between the flexible substrates.
ＬＥＤチップ１１Ｂは、図３（ａ）に示すように、ｎ型不純物がドープされたＧａＮ、ＳｉＣ、ＺｎＯ又はＧａ２Ｏ３等の光透過性を有する導電性成長基板１１０ａの上にＧａＮ系半導体（Ａｌ１−Ｘ−ＹＩｎＸＧａＹＮ、０≦Ｘ≦１，０≦Ｙ≦１，０≦Ｘ＋Ｙ≦１）からなるｎ型層１１５、発光層１１６及びｐ型層１１７を下からこの順に形成することにより得られ、発光層１１６から青色光又は紫外光を発光する。また、ＬＥＤチップ１１Ｂは、図３（ｂ）に示すように、サファイア成長基板の上にｎ型層、発光層及びｐ型層を下からこの順に形成した後に、成長基板とｎ層との間にレーザを照射して、成長基板を除去し、ｎ型層１１５又はｐ型層１１６にＳｉ、Ａｌ又はＣｕ等の導電性基材１１０ｂを接合させたものでもよい。ＬＥＤチップ１１Ｂには、ＩＴＯ（Ｉｎ２Ｏ３―ＳｎＯ２）、ＡＴＯ(ＳｎＯ２―Ｓｂ２Ｏ３)、ＩＺＯ（Ｉｎ２Ｏ３―ＺｎＯ）、ＴｉＯ２、ＳｎＯ２又はＺｎＯ等の導電性酸化物や、光透過性を有する程度の厚さで形成したＣｏ／Ａｕ又はＮｉ／Ａｕ等の金属積層体からなるｐ電極１１０ｐ及びｎ電極１１０ｎが互いに対向してＬＥＤチップ１１Ｂの両側に形成されている。ここで、ｐ電極１１０ｐ及びｎ電極１１０ｎとしては、光取り出しの観点から、ＩＴＯ又はＴｉＯ２を用いることが好ましい。 As shown in FIG. 3A, the LED chip 11B has a GaN-based semiconductor (Al1- X-YInXGaYN, 0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1, 0.ltoreq.X + Y.ltoreq.1) is obtained by forming an n-type layer 115, a light-emitting layer 116 and a p-type layer 117 in this order from the bottom. Blue light or ultraviolet light is emitted from the layer 116. In addition, as shown in FIG. 3B, the LED chip 11B has an n-type layer, a light emitting layer, and a p-type layer formed in this order from the bottom on the sapphire growth substrate, and then, The substrate may be irradiated with a laser to remove the growth substrate, and a conductive substrate 110b such as Si, Al, or Cu may be bonded to the n-type layer 115 or the p-type layer 116. The LED chip 11B has a conductive oxide such as ITO (In 2 O 3 —SnO 2), ATO (SnO 2 —Sb 2 O 3), IZO (In 2 O 3 —ZnO), TiO 2, SnO 2, or ZnO, and has a thickness enough to transmit light. The formed p electrode 110p and n electrode 110n made of a metal laminate such as Co / Au or Ni / Au are formed on both sides of the LED chip 11B so as to face each other. Here, as the p electrode 110p and the n electrode 110n, it is preferable to use ITO or TiO2 from the viewpoint of light extraction.
フレキシブル基板１０ａ，１０ｂは、図１のＡ部を拡大した図２に示すように、コア１０１ａ，１０１ｂと、コア１０１ａ，１０１ｂの一方の面に形成された配線１０２ａ，１０２ｂと、コアの他方の面に形成された蛍光体膜１０３ａ，１０３ｂとを有している。
コア１０１ａ，１０１ｂの材質としては、光透過性を有するポリイミド、ＰＥＴ（ポリエチレンテレフタレート）又は液晶ポリマーが挙げられるが、耐熱性の観点から、ポリイミドを用いることが望ましい。
As shown in FIG. 2 in which the portion A of FIG. 1 is enlarged, the flexible boards 10a and 10b are composed of cores 101a and 101b, wirings 102a and 102b formed on one surface of the cores 101a and 101b, and the other core. And phosphor films 103a and 103b formed on the surface.
Examples of the material for the cores 101a and 101b include light-transmitting polyimide, PET (polyethylene terephthalate), and liquid crystal polymer. From the viewpoint of heat resistance, it is desirable to use polyimide.
配線１０２ａ，１０２ｂの材質としては、上記の導電性酸化物や、光透過性の金属積層体が挙げられるが、光取り出しの観点から、ＩＴＯを用いることが好ましい。この配線１０２ａ，１０２ｂをＬＥＤチップの電極と導電性の透明接着剤を介して接合させることにより、ＬＥＤチップ１１と外部電力源と配線１０２ａ，１０２ｂを介して電気的に接続される。 Examples of the material of the wirings 102a and 102b include the conductive oxides and the light-transmitting metal laminates, but it is preferable to use ITO from the viewpoint of light extraction. The wirings 102a and 102b are electrically connected to the LED chip 11 and the external power source through the wirings 102a and 102b by bonding the electrodes of the LED chip and the conductive transparent adhesive.
蛍光体膜１０３ａ，１０３ｂは、シリコンゴム又はフッ素ゴム等の弾性体に蛍光体を含有させて形成されている。ＬＥＤチップ１１Ｂが青色発光ＬＥＤチップの場合、(Ｙ，Ｇｄ)３Ａｌ５Ｏ１２:Ｃｅ、(Ｓｒ，Ｂａ)２ＳｉＯ４:Ｅｕ又は (Ｓｉ，Ａｌ)１２(Ｏ， Ｎ)１６:Ｍ（Ｍ：アルカリ土類及び／又は希土類金属）等の黄色蛍光体や、（Ｂａ，Ｍｇ）２Ａｌ１６Ｏ２７：Ｅｕ，Ｍｎ又はＢａＭｇＡｌ１６Ｏ２７：Ｅｕ等の緑色蛍光体とＹ（Ｐ，Ｖ）Ｏ４：Ｅｕ又はＹ２Ｏ２Ｓ：Ｅｕ等の赤色蛍光体とを混合した蛍光体を用いることにより白色光を得ることができる。また、ＬＥＤチップが紫外発光ＬＥＤの場合、（Ｂａ，Ｃａ，Ｍｇ）１０（ＰＯ４ ）６Ｃｌ２ ：Ｅｕ又はＳｒ２Ｐ２Ｏ７：Ｅｕ等の青色蛍光体と上記の緑色蛍光体及び赤色蛍光体とを混合した蛍光体により、白色光を得ることができる。
充填層１５は、シリコンゴム又はフッ素ゴム等の弾性体からなる。この充填層１５に上記の蛍光体を含有させてもよい。この場合、フレキシブル基板１０ａ，１０ｂに蛍光体膜１０３ａ，１０３ｂを設けなくてもよい。
The phosphor films 103a and 103b are formed by containing a phosphor in an elastic body such as silicon rubber or fluororubber. When the LED chip 11B is a blue light emitting LED chip, (Y, Gd) 3Al5O12: Ce, (Sr, Ba) 2SiO4: Eu or (Si, Al) 12 (O, N) 16: M (M: alkaline earth and Yellow phosphor such as (Ba, Mg) 2Al16O27: Eu, Mn or BaMgAl16O27: Eu and red phosphor such as Y (P, V) O4: Eu or Y2O2S: Eu. White light can be obtained by using a phosphor mixed with the above. When the LED chip is an ultraviolet light emitting LED, a phosphor obtained by mixing a blue phosphor such as (Ba, Ca, Mg) 10 (PO4) 6Cl2: Eu or Sr2P2O7: Eu with the above-described green phosphor and red phosphor. Thus, white light can be obtained.
The filling layer 15 is made of an elastic body such as silicon rubber or fluorine rubber. The filling layer 15 may contain the phosphor described above. In this case, the phosphor films 103a and 103b need not be provided on the flexible substrates 10a and 10b.
上記の構成を有する本実施の形態の面状光源によれば、その厚みは、ＬＥＤチップと一対のフレキシブル基板の厚みのみに依存するため、厚みを薄くすることができる。その上、フレキシブル基板を用いることにより、衝撃や熱応力が発生してもフレキシブル基板でこれらを吸収することができるので、高信頼性の面状光源を得ることができる。 According to the planar light source of the present embodiment having the above-described configuration, the thickness depends only on the thickness of the LED chip and the pair of flexible substrates, and thus the thickness can be reduced. In addition, by using a flexible substrate, even if an impact or thermal stress occurs, these can be absorbed by the flexible substrate, so that a highly reliable planar light source can be obtained.
また、一対の電極を互いに対向して両側に形成したＬＥＤチップを用いて面状光源を形成したので、一方のフレキシブル基板にＬＥＤチップを搭載した後、これと他方のフレキシブル基板とを位置合わせしてＬＥＤチップと接合させるだけで面状光源を形成することができるので、製造工程が簡便となる。 In addition, since the planar light source is formed using the LED chip formed on both sides with a pair of electrodes facing each other, the LED chip is mounted on one flexible substrate, and then this is aligned with the other flexible substrate. Since the planar light source can be formed simply by bonding to the LED chip, the manufacturing process is simplified.
さらに、光透過性の一対のフレキシブル基板を用いて面状光源を形成することにより、面状光源の表裏面から発光するので、両面表示型の液晶ディスプレイに用いても厚さが嵩むことはなく、薄型の両面表示型の液晶ディスプレイを製造することができる。
（第２の実施の形態）
図４（ａ），（ｂ）は、本発明の第２の実施の形態の面状光源を示す拡大断面図である。
Furthermore, since a planar light source is formed using a pair of light transmissive flexible substrates, light is emitted from the front and back surfaces of the planar light source, so that the thickness does not increase even when used for a double-sided display type liquid crystal display. A thin double-sided display type liquid crystal display can be manufactured.
(Second Embodiment)
4A and 4B are enlarged cross-sectional views showing a planar light source according to the second embodiment of the present invention.
本実施の形態の面状光源は、一方の面側に正負の両電極を有する青色発光ＬＥＤチップ１２Ｂを用いている点において、第１の実施の形態とは異なる。 The planar light source of the present embodiment is different from the first embodiment in that a blue light emitting LED chip 12B having both positive and negative electrodes on one surface side is used.
本実施の形態で用いるＬＥＤチップ１２Ｂは、図５に示すように、サファイア等の光透過性を有する絶縁性成長基板１２０の上にＧａＮ系半導体からなるバッファ層１２８、ｎ型層１２５、発光層１２６及びｐ型層１２７を下からこの順に形成することにより得られる。また、ＬＥＤチップ１２Ｂには、光透過性を有するｐ電極１２１ｐ及びｎ電極１２１ｎの両電極がＬＥＤチップ１２Ｂの一方の面側に形成されている。 As shown in FIG. 5, the LED chip 12B used in the present embodiment has a buffer layer 128 made of a GaN-based semiconductor, an n-type layer 125, and a light emitting layer on a light-transmitting insulating growth substrate 120 such as sapphire. 126 and p-type layer 127 are formed in this order from the bottom. In addition, the LED chip 12B is formed with both the light-transmitting p electrode 121p and the n electrode 121n on one surface side of the LED chip 12B.
このようなＬＥＤチップ１２Ｂを用いた面状光源では、一対のフレキシブル基板１０ｃ，１０ｄの一方の基板のみに配線を形成すればよい。即ち、図４（ａ）に示すように、ＬＥＤチップ１２Ｂと電気的に接続するフレキシブル基板１０ｄには、第１の実施の形態と同様に、コア１０１ｄの一方の面に配線１０２ｄを形成し、他方の面に蛍光体膜１０３ｄとを形成しているが、他方のフレキシブル基板１０ｃには、コア１０１ｃの一方の面に蛍光体膜１０３ｃのみを形成すればよい。フレキシブル基板１０ｄにはＬＥＤチップ１２Ｂがフリップチップ型で搭載され、ＬＥＤチップ１２Ｂを挟んでフレキシブル基板１０ｃ，１０ｄが対抗するように配置されている。これにより、ＬＥＤチップ１２Ｂが機械的衝撃から保護される。そして、フレキシブル基板１０ｃ，１０ｄの間の空隙には、第一の実施の形態と同様に、充填層１５が形成されている。 In such a planar light source using the LED chip 12B, wiring may be formed only on one of the pair of flexible substrates 10c and 10d. That is, as shown in FIG. 4A, the flexible substrate 10d that is electrically connected to the LED chip 12B has the wiring 102d formed on one surface of the core 101d, as in the first embodiment. Although the phosphor film 103d is formed on the other surface, only the phosphor film 103c may be formed on one surface of the core 101c on the other flexible substrate 10c. An LED chip 12B is mounted in a flip chip type on the flexible substrate 10d, and the flexible substrates 10c and 10d are arranged to face each other with the LED chip 12B interposed therebetween. Thereby, the LED chip 12B is protected from mechanical shock. A filling layer 15 is formed in the gap between the flexible substrates 10c and 10d, as in the first embodiment.
ここで、図４（ｂ）に示すように、ＬＥＤチップ１２Ｂの搭載部以外の部分はフレキシブル基板１０ｃ，１０ｄが接触するようにしてもよい。この場合、フレキシブル基板１０１０ｄのフレキシブル基板１０ｃと対向する面に接着膜（図示せず。）を形成するとよい。
上記の構成を有する本実施の形態の面状光源によれば、ＬＥＤチップと電気的に接続させる配線パターンを設けるフレキシブル基板が１枚で済むため、安価に面状光源を製造することができる。
（第３の実施の形態）
図６（ａ），（ｂ）は、本発明の第３の実施の形態の面状光源を示す拡大断面図である。
Here, as shown in FIG. 4B, the flexible substrates 10c and 10d may be in contact with portions other than the mounting portion of the LED chip 12B. In this case, an adhesive film (not shown) may be formed on the surface of the flexible substrate 1010d that faces the flexible substrate 10c.
According to the planar light source of the present embodiment having the above-described configuration, the planar light source can be manufactured at low cost because only one flexible substrate is required to provide the wiring pattern that is electrically connected to the LED chip.
(Third embodiment)
FIGS. 6A and 6B are enlarged cross-sectional views showing a planar light source according to the third embodiment of the present invention.
本実施の形態の面状光源は、青色発光ＬＥＤ１１Ｂチップ、緑色発光ＬＥＤチップ１１Ｇ及び赤色発光ＬＥＤチップ１１Ｒを用いて白色光を得る点において、第１及び第２の実施の形態と異なる。 The planar light source of the present embodiment is different from the first and second embodiments in that white light is obtained using the blue light emitting LED 11B chip, the green light emitting LED chip 11G, and the red light emitting LED chip 11R.
赤色発光ＬＥＤチップ１１Ｒは、図３（ａ）において、光透過性を有する導電性成長基板１１０ａをＧａＰにより形成し、ｎ型層１１５、発光層１１６及びｐ型層１１７をＡｌＧａＡｓ系（Ａｌ１−ＺＧａＺＡｓ、０＜Ｚ＜１）により形成することにより得られ、発光層１１６から赤色光を発光する。また、緑色発光ＬＥＤチップ１１Ｇは、図３（ａ）に示す第１の実施の形態のＬＥＤチップ１１Ｂと同様に、ｎ型不純物がドープされた光透過性を有する導電性成長基板１１０ａの上にＧａＮ系半導体からなるｎ型層１１５、発光層１１６及びｐ型層１１７を下からこの順に形成することにより得られ、発光層１１６から緑色光を発光する。そして、ＬＥＤチップ１１Ｒ，１１Ｇには、図３（ａ）と同様に、透明なｐ電極１１０ｐ及びｎ電極１１０ｎが互いに対向してＬＥＤチップ１１の両側に形成されている。 In the red light emitting LED chip 11R, in FIG. 3A, a light-transmitting conductive growth substrate 110a is formed of GaP, and an n-type layer 115, a light-emitting layer 116, and a p-type layer 117 are made of AlGaAs (Al1-ZGaZAs). , 0 <Z <1), and red light is emitted from the light emitting layer 116. Further, the green light emitting LED chip 11G is formed on the conductive growth substrate 110a having light transmissivity doped with an n-type impurity, like the LED chip 11B of the first embodiment shown in FIG. The n-type layer 115, the light emitting layer 116, and the p-type layer 117 made of a GaN-based semiconductor are formed in this order from the bottom, and green light is emitted from the light emitting layer 116. In the LED chips 11R and 11G, similarly to FIG. 3A, transparent p-electrode 110p and n-electrode 110n are formed on both sides of the LED chip 11 so as to face each other.
この場合、図６（ａ）に示すように、一対のフレキシブル基板１０ｅ，１０ｆの間に青色発光ＬＥＤチップ１１Ｂ、緑色発光ＬＥＤチップ１１Ｇ及び赤色発光ＬＥＤチップ１１Ｒに配置してもよいし、図６（ｂ）に示すように、上記３種のＬＥＤチップ１１Ｒ，１１Ｇ，１１Ｂを挟まれるフレキシブル基板１０ｅ，１０ｆ，１０ｇ，１０ｈを互いに分けて、層状に配置してもよい。 In this case, as shown in FIG. 6A, the blue light emitting LED chip 11B, the green light emitting LED chip 11G, and the red light emitting LED chip 11R may be arranged between the pair of flexible substrates 10e and 10f. As shown in (b), the flexible substrates 10e, 10f, 10g, and 10h sandwiching the three types of LED chips 11R, 11G, and 11B may be separated from each other and arranged in layers.
本実施の形態では、ＬＥＤチップ１１Ｒ，１１Ｇ，１１Ｂを用いるので、フレキシブル基板に蛍光体膜を設けなくてもよい。 In the present embodiment, since the LED chips 11R, 11G, and 11B are used, it is not necessary to provide the phosphor film on the flexible substrate.
上記の構成を有する本実施の形態の面状光源によれば、各ＬＥＤチップ１１Ｒ，１１Ｇ，１１Ｂの光の出力を制御できるので、発光光の色目を自在に変えることができる。
（その他の実施の形態）
例えば、図７（ａ），（ｂ）に示すように、レンズ形状部２０や凹凸形状部２１等の光学形状部をフレキシブル基板１０ａ，１０ｂの光取り出し面側に設けてもよい。これらの光学形状部２０，２１は、フレキシブル基板１０ａ，１０ｂと一体的に形成してもよいし、フレキシブル基板１０ａ，１０ｂと別途に樹脂やゴム等により形成してもよい。
According to the planar light source of the present embodiment having the above configuration, the light output of the LED chips 11R, 11G, and 11B can be controlled, so that the color of the emitted light can be freely changed.
(Other embodiments)
For example, as shown in FIGS. 7A and 7B, optical shape portions such as the lens shape portion 20 and the uneven shape portion 21 may be provided on the light extraction surface side of the flexible substrates 10a and 10b. These optical shape portions 20 and 21 may be formed integrally with the flexible substrates 10a and 10b, or may be formed of resin, rubber, or the like separately from the flexible substrates 10a and 10b.
また、上記の実施の形態において、充填層は弾性体から形成するとしたが、窒素ガス等の不活性ガス、又は、シリコンオイルや超純水等の流体から形成してもよい。充填層を流体とした場合、図７（ｃ）に示すように、冷却装置３０を介して流体を冷却媒体Ｌとして面状光源に供給することができる。このような構成では、ＬＥＤチップ１１Ｂの放熱性が向上する。 In the above embodiment, the filling layer is formed of an elastic body, but may be formed of an inert gas such as nitrogen gas or a fluid such as silicon oil or ultrapure water. When the packed bed is a fluid, the fluid can be supplied as a cooling medium L to the planar light source via the cooling device 30 as shown in FIG. 7C. With such a configuration, the heat dissipation of the LED chip 11B is improved.
更に、上記の実施の形態では、一対のフレキシブル基板の両方のＬＥＤチップ搭載面と反対側を光取り出し面としたが、一方のフレキシブル基板の光取り出し面側にＡｌ等の反射膜を設けることにより、他方の光取り出し面のみから光が取り出すようにしてもよい。この場合、反射膜形成面側に蛍光体膜は形成しなくてもよい。 Furthermore, in the above embodiment, the opposite side of the LED chip mounting surface of the pair of flexible substrates is the light extraction surface, but by providing a reflective film such as Al on the light extraction surface side of one flexible substrate. The light may be extracted only from the other light extraction surface. In this case, the phosphor film may not be formed on the reflective film forming surface side.
１０ａ，１０ｂ，１０ｃ，１０ｄ フレキシブル基板
１１Ｂ，１２Ｂ 青色発光ＬＥＤチップ
１１Ｒ 赤色発光ＬＥＤチップ
１１Ｇ 緑色発光ＬＥＤチップ
１５ 充填層
１６ 封止部
１７ 蛍光体膜
１８ ワイヤ
１１０ａ 導電性成長基板
１１０ｂ 導電性基材
１１１ｎ ｎ電極
１１１ｐ ｐ電極
１１５，１２５ ｎ型層
１１６，１２６ 発光層
１１７，１２７ ｐ型層
１２０ 絶縁性成長基板
Ｌ 冷却媒体
10a, 10b, 10c, 10d Flexible substrates 11B, 12B Blue light emitting LED chip 11R Red light emitting LED chip 11G Green light emitting LED chip 15 Filling layer 16 Sealing portion 17 Phosphor film 18 Wire 110a Conductive growth substrate 110b Conductive substrate 111n n-electrode 111 p p-electrode 115, 125 n-type layer 116, 126 light-emitting layer 117, 127 p-type layer 120 Insulating growth substrate L Cooling medium
Claims (12)
前記一対のフレキシブル基板に挟まれて搭載された複数の無機系発光素子と
を有することを特徴とする面状光源。 A pair of flexible substrates having optical transparency;
A planar light source comprising: a plurality of inorganic light emitting elements mounted between the pair of flexible substrates.
ことを特徴とする請求項１に記載の面状光源。 The planar light source according to claim 1, wherein positive and negative electrodes of the inorganic light emitting element are formed on both sides of the inorganic light emitting element so as to face each other.
ことを特徴とする請求項２に記載の面状光源。 The planar light source according to claim 2, wherein the positive and negative electrodes are light transmissive electrodes.
ことを特徴とする請求項１乃至請求項３のいずれか１項に記載の面状光源。 The planar light source according to any one of claims 1 to 3, wherein a gap between the pair of flexible substrates is filled with an elastic body.
ことを特徴とする請求項４に記載の面状光源。 5. The planar shape according to claim 4, wherein the elastic body includes a phosphor that uses light emitted from the inorganic light emitting element as excitation light and emits wavelength-converted light having a wavelength different from that of the excitation light. light source.
ことを特徴とする請求項１乃至３のいずれか１項に記載の面状光源。 The planar light source according to claim 1, wherein a gap between the pair of flexible substrates is filled with a fluid.
ことを特徴とする請求項６に記載の面状光源。 The planar light source according to claim 6, wherein the fluid is supplied from a cooling device.
ことを特徴とする請求項１乃至請求項７のいずれか１項に記載の面状光源。 8. The resin film containing a phosphor is formed on a surface of at least one flexible substrate of the pair of flexible substrates on which an inorganic light emitting element is not mounted. The planar light source according to claim 1.
ことを特徴とする請求項１乃至請求項８のいずれか１項に記載の面状光源。 The optical shape part is formed in the surface in which the inorganic type light emitting element of at least one flexible substrate of said pair of flexible substrates is not mounted, The any one of Claim 1 thru | or 8 characterized by the above-mentioned. The surface light source described.
ことを特徴とする請求項９に記載の面状光源。 The planar light source according to claim 9, wherein the optical shape portion is a lens shape portion.
ことを特徴とする請求項９に記載の面状光源。 The planar light source according to claim 9, wherein the optical shape portion is a concavo-convex shape portion.
ことを特徴とする請求項１乃至請求項１１のいずれか１項に記載の面状光源。
The reflective film is formed in the side in which the light emitting element of the inorganic type light emitting element of one flexible substrate of said pair of flexible substrates is not mounted, The any one of Claim 1 thru | or 11 characterized by the above-mentioned. The surface light source described.
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