JP2008022009A - 不揮発性メモリー素子及びその製造方法 - Google Patents

不揮発性メモリー素子及びその製造方法 Download PDF

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Publication number
JP2008022009A
JP2008022009A JP2007182659A JP2007182659A JP2008022009A JP 2008022009 A JP2008022009 A JP 2008022009A JP 2007182659 A JP2007182659 A JP 2007182659A JP 2007182659 A JP2007182659 A JP 2007182659A JP 2008022009 A JP2008022009 A JP 2008022009A
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Japan
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arrangement interval
word line
pattern
numbered
selection line
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Pending
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JP2007182659A
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Japanese (ja)
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JP2008022009A5 (enExample
Inventor
Jong-Sun Sel
薛　鐘善
Jung-Dal Choi
崔　正達
Young-Woo Park
泳雨 朴
Jin-Taek Park
鎭澤 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020060065040A external-priority patent/KR100777348B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008022009A publication Critical patent/JP2008022009A/ja
Publication of JP2008022009A5 publication Critical patent/JP2008022009A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2007182659A 2006-07-11 2007-07-11 不揮発性メモリー素子及びその製造方法 Pending JP2008022009A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060065040A KR100777348B1 (ko) 2006-07-11 2006-07-11 비휘발성 기억 장치의 셀 어레이 구조 및 그 형성방법
US11/729,169 US8045383B2 (en) 2006-07-11 2007-03-28 Non-volatile memory devices including dummy word lines and related structures and methods

Publications (2)

Publication Number Publication Date
JP2008022009A true JP2008022009A (ja) 2008-01-31
JP2008022009A5 JP2008022009A5 (enExample) 2010-08-19

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ID=38830888

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Application Number Title Priority Date Filing Date
JP2007182659A Pending JP2008022009A (ja) 2006-07-11 2007-07-11 不揮発性メモリー素子及びその製造方法

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JP (1) JP2008022009A (enExample)
DE (1) DE102007031278B4 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150170A (ja) * 1996-11-14 1998-06-02 Samsung Electron Co Ltd 不揮発性メモリ装置
JP2004127346A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 不揮発性半導体メモリ装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212472A (ja) * 1990-07-13 1992-08-04 Toshiba Corp 不揮発性半導体記憶装置の製造方法
DE102005058601A1 (de) * 2004-12-27 2006-07-06 Hynix Semiconductor Inc., Icheon Flash-Speicherbauelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150170A (ja) * 1996-11-14 1998-06-02 Samsung Electron Co Ltd 不揮発性メモリ装置
JP2004127346A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 不揮発性半導体メモリ装置
JP2004241558A (ja) * 2003-02-05 2004-08-26 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム

Also Published As

Publication number Publication date
DE102007031278A1 (de) 2008-01-24
DE102007031278B4 (de) 2012-08-02

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