JP2008021968A - 不揮発性メモリ素子の動作方法 - Google Patents

不揮発性メモリ素子の動作方法 Download PDF

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Publication number
JP2008021968A
JP2008021968A JP2007121187A JP2007121187A JP2008021968A JP 2008021968 A JP2008021968 A JP 2008021968A JP 2007121187 A JP2007121187 A JP 2007121187A JP 2007121187 A JP2007121187 A JP 2007121187A JP 2008021968 A JP2008021968 A JP 2008021968A
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JP
Japan
Prior art keywords
resistance
resistance layer
layers
memory device
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007121187A
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English (en)
Japanese (ja)
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JP2008021968A5 (https=
Inventor
Yoon-Dong Park
允童 朴
Kyoung-Lae Cho
慶來 趙
Jae-Woong Hyun
在雄 玄
Sung-Jae Byun
成宰 邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008021968A publication Critical patent/JP2008021968A/ja
Publication of JP2008021968A5 publication Critical patent/JP2008021968A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
JP2007121187A 2006-07-12 2007-05-01 不揮発性メモリ素子の動作方法 Pending JP2008021968A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060065469A KR20080006358A (ko) 2006-07-12 2006-07-12 비휘발성 메모리 소자의 동작 방법

Publications (2)

Publication Number Publication Date
JP2008021968A true JP2008021968A (ja) 2008-01-31
JP2008021968A5 JP2008021968A5 (https=) 2010-06-17

Family

ID=38999940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007121187A Pending JP2008021968A (ja) 2006-07-12 2007-05-01 不揮発性メモリ素子の動作方法

Country Status (3)

Country Link
JP (1) JP2008021968A (https=)
KR (1) KR20080006358A (https=)
CN (1) CN101106135A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013200923A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 不揮発性半導体記憶装置
JP2023519135A (ja) * 2020-03-17 2023-05-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 相変化材料スイッチおよびその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
US8194441B2 (en) * 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013200923A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 不揮発性半導体記憶装置
US8817523B2 (en) 2012-03-26 2014-08-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US9245623B2 (en) 2012-03-26 2016-01-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP2023519135A (ja) * 2020-03-17 2023-05-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 相変化材料スイッチおよびその製造方法
JP7730242B2 (ja) 2020-03-17 2025-08-27 インターナショナル・ビジネス・マシーンズ・コーポレーション 相変化材料スイッチおよびその製造方法

Also Published As

Publication number Publication date
KR20080006358A (ko) 2008-01-16
CN101106135A (zh) 2008-01-16

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