KR20080006358A - 비휘발성 메모리 소자의 동작 방법 - Google Patents

비휘발성 메모리 소자의 동작 방법 Download PDF

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Publication number
KR20080006358A
KR20080006358A KR1020060065469A KR20060065469A KR20080006358A KR 20080006358 A KR20080006358 A KR 20080006358A KR 1020060065469 A KR1020060065469 A KR 1020060065469A KR 20060065469 A KR20060065469 A KR 20060065469A KR 20080006358 A KR20080006358 A KR 20080006358A
Authority
KR
South Korea
Prior art keywords
layers
resistive
resistance
memory device
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060065469A
Other languages
English (en)
Korean (ko)
Inventor
박윤동
조경래
현재웅
변성재
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020060065469A priority Critical patent/KR20080006358A/ko
Priority to CNA2007101010388A priority patent/CN101106135A/zh
Priority to JP2007121187A priority patent/JP2008021968A/ja
Priority to US11/826,059 priority patent/US7636251B2/en
Publication of KR20080006358A publication Critical patent/KR20080006358A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
KR1020060065469A 2006-04-21 2006-07-12 비휘발성 메모리 소자의 동작 방법 Withdrawn KR20080006358A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060065469A KR20080006358A (ko) 2006-07-12 2006-07-12 비휘발성 메모리 소자의 동작 방법
CNA2007101010388A CN101106135A (zh) 2006-07-12 2007-04-23 非易失性存储器件的操作方法
JP2007121187A JP2008021968A (ja) 2006-07-12 2007-05-01 不揮発性メモリ素子の動作方法
US11/826,059 US7636251B2 (en) 2006-04-21 2007-07-12 Methods of operating a non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060065469A KR20080006358A (ko) 2006-07-12 2006-07-12 비휘발성 메모리 소자의 동작 방법

Publications (1)

Publication Number Publication Date
KR20080006358A true KR20080006358A (ko) 2008-01-16

Family

ID=38999940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060065469A Withdrawn KR20080006358A (ko) 2006-04-21 2006-07-12 비휘발성 메모리 소자의 동작 방법

Country Status (3)

Country Link
JP (1) JP2008021968A (https=)
KR (1) KR20080006358A (https=)
CN (1) CN101106135A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
KR20220133284A (ko) * 2020-03-17 2022-10-04 인터내셔널 비지네스 머신즈 코포레이션 상변화 물질 스위치 및 그 제조 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194441B2 (en) * 2010-09-23 2012-06-05 Micron Technology, Inc. Phase change memory state determination using threshold edge detection
JP5763004B2 (ja) * 2012-03-26 2015-08-12 株式会社東芝 不揮発性半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
KR20220133284A (ko) * 2020-03-17 2022-10-04 인터내셔널 비지네스 머신즈 코포레이션 상변화 물질 스위치 및 그 제조 방법

Also Published As

Publication number Publication date
JP2008021968A (ja) 2008-01-31
CN101106135A (zh) 2008-01-16

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060712

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid