CN101106135A - 非易失性存储器件的操作方法 - Google Patents

非易失性存储器件的操作方法 Download PDF

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Publication number
CN101106135A
CN101106135A CNA2007101010388A CN200710101038A CN101106135A CN 101106135 A CN101106135 A CN 101106135A CN A2007101010388 A CNA2007101010388 A CN A2007101010388A CN 200710101038 A CN200710101038 A CN 200710101038A CN 101106135 A CN101106135 A CN 101106135A
Authority
CN
China
Prior art keywords
resistive layer
resistance
resistive
bit line
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101010388A
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English (en)
Chinese (zh)
Inventor
朴允童
赵庆来
玄在雄
边成宰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101106135A publication Critical patent/CN101106135A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
CNA2007101010388A 2006-07-12 2007-04-23 非易失性存储器件的操作方法 Pending CN101106135A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR65469/06 2006-07-12
KR1020060065469A KR20080006358A (ko) 2006-07-12 2006-07-12 비휘발성 메모리 소자의 동작 방법

Publications (1)

Publication Number Publication Date
CN101106135A true CN101106135A (zh) 2008-01-16

Family

ID=38999940

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101010388A Pending CN101106135A (zh) 2006-07-12 2007-04-23 非易失性存储器件的操作方法

Country Status (3)

Country Link
JP (1) JP2008021968A (https=)
KR (1) KR20080006358A (https=)
CN (1) CN101106135A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102411992A (zh) * 2010-09-23 2012-04-11 美光科技公司 使用阈值边缘检测的相变存储器状态确定
CN115362569A (zh) * 2020-03-17 2022-11-18 国际商业机器公司 相变材料开关及其制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
JP5763004B2 (ja) * 2012-03-26 2015-08-12 株式会社東芝 不揮発性半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102411992A (zh) * 2010-09-23 2012-04-11 美光科技公司 使用阈值边缘检测的相变存储器状态确定
CN115362569A (zh) * 2020-03-17 2022-11-18 国际商业机器公司 相变材料开关及其制造方法

Also Published As

Publication number Publication date
JP2008021968A (ja) 2008-01-31
KR20080006358A (ko) 2008-01-16

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