JP2007535413A - ナノワイヤ成長および採取のための系および方法 - Google Patents
ナノワイヤ成長および採取のための系および方法 Download PDFInfo
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- JP2007535413A JP2007535413A JP2007511037A JP2007511037A JP2007535413A JP 2007535413 A JP2007535413 A JP 2007535413A JP 2007511037 A JP2007511037 A JP 2007511037A JP 2007511037 A JP2007511037 A JP 2007511037A JP 2007535413 A JP2007535413 A JP 2007535413A
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- nanowire
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- nanowires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
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- C30—CRYSTAL GROWTH
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
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- C—CHEMISTRY; METALLURGY
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
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- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
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- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
- H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
- H10P14/274—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using seed materials
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
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- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
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- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- H10D30/6212—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies having non-rectangular cross-sections
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/743—Carbon nanotubes, CNTs having specified tube end structure, e.g. close-ended shell or open-ended tube
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
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- Y10S977/00—Nanotechnology
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- Y10S977/891—Vapor phase deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- General Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56660204P | 2004-04-30 | 2004-04-30 | |
| US58836304P | 2004-07-16 | 2004-07-16 | |
| PCT/US2005/014923 WO2005119753A2 (en) | 2004-04-30 | 2005-04-29 | Systems and methods for nanowire growth and harvesting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007535413A true JP2007535413A (ja) | 2007-12-06 |
| JP2007535413A5 JP2007535413A5 (https=) | 2008-05-15 |
Family
ID=35463606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007511037A Pending JP2007535413A (ja) | 2004-04-30 | 2005-04-29 | ナノワイヤ成長および採取のための系および方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7105428B2 (https=) |
| EP (1) | EP1747577A2 (https=) |
| JP (1) | JP2007535413A (https=) |
| KR (1) | KR20070011550A (https=) |
| CN (2) | CN101010780B (https=) |
| AU (1) | AU2005251089A1 (https=) |
| CA (1) | CA2564220A1 (https=) |
| WO (1) | WO2005119753A2 (https=) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010260170A (ja) * | 2009-04-28 | 2010-11-18 | Commissariat A L'energie Atomique & Aux Energies Alternatives | シリコン及び/又はゲルマニウムナノワイヤの組立方法 |
| JP2011519730A (ja) * | 2008-03-25 | 2011-07-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 超格子/量子井戸ナノワイヤ |
| JP2012502187A (ja) * | 2008-09-12 | 2012-01-26 | エルジー・ケム・リミテッド | 金属ナノベルト、その製造方法、それを含む導電性インク組成物および伝導性フィルム |
| KR20120130751A (ko) * | 2009-12-22 | 2012-12-03 | 큐나노에이비 | 나노와이어 구조체를 제조하는 방법 |
| JP2013528698A (ja) * | 2010-03-11 | 2013-07-11 | エルジー・ケム・リミテッド | 金属ナノベルトの製造方法 |
| JP2013530302A (ja) * | 2010-03-11 | 2013-07-25 | エルジー・ケム・リミテッド | ベルト状の金属ナノ構造体及びその製造方法 |
| JP2015159121A (ja) * | 2010-05-28 | 2015-09-03 | 株式会社半導体エネルギー研究所 | 蓄電装置の作製方法 |
Families Citing this family (203)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| CN101887935B (zh) * | 2000-08-22 | 2013-09-11 | 哈佛学院董事会 | 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造 |
| KR20030055346A (ko) * | 2000-12-11 | 2003-07-02 | 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 | 나노센서 |
| US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
| AU2003261205A1 (en) | 2002-07-19 | 2004-02-09 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
| CA2499965C (en) * | 2002-09-30 | 2013-03-19 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
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| US8865251B2 (en) | 2008-09-12 | 2014-10-21 | Lg Chem, Ltd. | Metal nanobelt and method of manufacturing the same, and conductive ink composition and conductive film comprising the same |
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| KR20120130751A (ko) * | 2009-12-22 | 2012-12-03 | 큐나노에이비 | 나노와이어 구조체를 제조하는 방법 |
| KR101914651B1 (ko) | 2009-12-22 | 2018-11-05 | 큐나노에이비 | 나노와이어 구조체를 제조하는 방법 |
| JP2013528698A (ja) * | 2010-03-11 | 2013-07-11 | エルジー・ケム・リミテッド | 金属ナノベルトの製造方法 |
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| US8962731B2 (en) | 2010-03-11 | 2015-02-24 | Lg Chem, Ltd. | Preparation method of metal nanobelt |
| US9492866B2 (en) | 2010-03-11 | 2016-11-15 | Lg Chem, Ltd. | Belt-shaped metal nanostructure and method for preparing same |
| JP2015159121A (ja) * | 2010-05-28 | 2015-09-03 | 株式会社半導体エネルギー研究所 | 蓄電装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060019472A1 (en) | 2006-01-26 |
| CN102351169B (zh) | 2013-11-27 |
| EP1747577A2 (en) | 2007-01-31 |
| US7105428B2 (en) | 2006-09-12 |
| CA2564220A1 (en) | 2005-12-15 |
| CN102351169A (zh) | 2012-02-15 |
| WO2005119753A2 (en) | 2005-12-15 |
| KR20070011550A (ko) | 2007-01-24 |
| AU2005251089A1 (en) | 2005-12-15 |
| US20060255481A1 (en) | 2006-11-16 |
| CN101010780A (zh) | 2007-08-01 |
| WO2005119753A3 (en) | 2006-07-27 |
| US7666791B2 (en) | 2010-02-23 |
| US7273732B2 (en) | 2007-09-25 |
| CN101010780B (zh) | 2012-07-25 |
| US20080072818A1 (en) | 2008-03-27 |
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