JP2007531276A - 成分を満たした複数の孔を有するｃｍｐ多孔質パッド - Google Patents

成分を満たした複数の孔を有するｃｍｐ多孔質パッド Download PDF

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Publication number
JP2007531276A
JP2007531276A JP2007505008A JP2007505008A JP2007531276A JP 2007531276 A JP2007531276 A JP 2007531276A JP 2007505008 A JP2007505008 A JP 2007505008A JP 2007505008 A JP2007505008 A JP 2007505008A JP 2007531276 A JP2007531276 A JP 2007531276A
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JP
Japan
Prior art keywords
polishing pad
polishing
component
less
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007505008A
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English (en)
Japanese (ja)
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JP2007531276A5 (enExample
Inventor
プラサド，アバネシュワー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2007531276A publication Critical patent/JP2007531276A/ja
Publication of JP2007531276A5 publication Critical patent/JP2007531276A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2007505008A 2004-03-23 2005-03-14 成分を満たした複数の孔を有するｃｍｐ多孔質パッド Pending JP2007531276A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,064 US7195544B2 (en) 2004-03-23 2004-03-23 CMP porous pad with component-filled pores
PCT/US2005/008527 WO2005100497A1 (en) 2004-03-23 2005-03-14 Cmp porous pad with component-filled pores

Publications (2)

Publication Number Publication Date
JP2007531276A true JP2007531276A (ja) 2007-11-01
JP2007531276A5 JP2007531276A5 (enExample) 2008-04-17

Family

ID=34962652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007505008A Pending JP2007531276A (ja) 2004-03-23 2005-03-14 成分を満たした複数の孔を有するｃｍｐ多孔質パッド

Country Status (9)

Country Link
US (2) US7195544B2 (enExample)
EP (1) EP1751243B1 (enExample)
JP (1) JP2007531276A (enExample)
KR (2) KR101178335B1 (enExample)
CN (1) CN1934208B (enExample)
IL (2) IL176955A (enExample)
MY (2) MY146815A (enExample)
TW (1) TWI280266B (enExample)
WO (1) WO2005100497A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010058220A (ja) * 2008-09-03 2010-03-18 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法
WO2010123744A3 (en) * 2009-04-23 2011-01-20 Cabot Microelectronics Corporation Cmp porous pad with particles in a polymeric matrix
JP2012245582A (ja) * 2011-05-27 2012-12-13 Nippon Electric Glass Co Ltd 酸化セリウム系研磨材の製造方法

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7195544B2 (en) * 2004-03-23 2007-03-27 Cabot Microelectronics Corporation CMP porous pad with component-filled pores
US20070010175A1 (en) * 2005-07-07 2007-01-11 San Fang Chemical Industry Co., Ltd. Polishing pad and method of producing same
RU2008106248A (ru) * 2005-07-19 2009-08-27 Дау Глобал Текнолоджиз Инк. (Us) Содержащий микрополости упругий, термопластичный пеноматериал, композиционный материал из пеноматериала и частиц, способы получения и изделия, изготовленные из него
TWI378844B (en) * 2005-08-18 2012-12-11 Rohm & Haas Elect Mat Polishing pad and method of manufacture
TW200709892A (en) * 2005-08-18 2007-03-16 Rohm & Haas Elect Mat Transparent polishing pad
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
ES2358473T3 (es) 2007-05-11 2011-05-11 Decathlon Artículo de confección con efecto de contención heterogéneo para la práctica de un deporte.
JP5514806B2 (ja) * 2008-04-29 2014-06-04 セミクエスト・インコーポレーテッド 研磨パッド組成物およびその製造方法ならびに使用
TWI409137B (zh) * 2008-06-19 2013-09-21 Bestac Advanced Material Co Ltd 研磨墊及其微型結構形成方法
TWM352127U (en) * 2008-08-29 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
TWI465315B (zh) * 2008-11-12 2014-12-21 Bestac Advanced Material Co Ltd 可導電之拋光墊及其製造方法
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
IL196146A (en) 2008-12-23 2014-01-30 Elta Systems Ltd Signal transmission system and method back to the source of transmission
JP5393434B2 (ja) * 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8702479B2 (en) * 2010-10-15 2014-04-22 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US8257152B2 (en) * 2010-11-12 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Silicate composite polishing pad
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
JP2015185815A (ja) * 2014-03-26 2015-10-22 株式会社東芝 研磨パッド、研磨方法、及び半導体装置の製造方法
US9238294B2 (en) * 2014-06-18 2016-01-19 Nexplanar Corporation Polishing pad having porogens with liquid filler
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN113579992A (zh) 2014-10-17 2021-11-02 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
JP2016087770A (ja) * 2014-11-11 2016-05-23 株式会社東芝 研磨布および研磨方法
US10946495B2 (en) 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
KR20240015161A (ko) 2016-01-19 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 다공성 화학적 기계적 연마 패드들
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN107866753B (zh) * 2017-12-08 2024-07-26 清华大学 具有随机多孔结构金属结合剂砂轮、装置及制备工艺
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
TWI885783B (zh) 2019-02-20 2025-06-01 美商應用材料股份有限公司 化學機械拋光裝置及化學機械拋光方法
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
TW202522580A (zh) 2019-08-13 2025-06-01 美商應用材料股份有限公司 化學機械研磨系統
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113977453B (zh) * 2021-11-08 2023-01-13 万华化学集团电子材料有限公司 提高抛光平坦度的化学机械抛光垫及其应用
TWI841907B (zh) * 2022-01-17 2024-05-11 貝達先進材料股份有限公司 研磨墊、製造研磨墊之方法及研磨裝置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074769B2 (ja) * 1991-10-11 1995-01-25 ロデール・ニッタ株式会社 研磨用クロス
JPH10277923A (ja) * 1997-02-03 1998-10-20 Tokyo Electron Ltd 研磨装置及び研磨方法
JPH1133903A (ja) * 1997-07-15 1999-02-09 Internatl Business Mach Corp <Ibm> マイクロカプセル化された研磨剤を配給する方法及び装置
JPH11285961A (ja) * 1998-04-03 1999-10-19 Nikon Corp 研磨パッド及び研磨方法
JP2002283221A (ja) * 2001-03-21 2002-10-03 Rodel Nitta Co 研磨布
JP2004025415A (ja) * 2002-06-28 2004-01-29 Noritake Co Ltd 研磨体およびその製造方法
JP2004281685A (ja) * 2003-03-14 2004-10-07 Mitsubishi Electric Corp 半導体基板の研磨用パッドおよび半導体基板の研磨方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769093A (en) 1970-08-21 1973-10-30 Gen Electric Vacuum loading process for the manufacture of a narrow pore fluid electrode
US4127515A (en) 1974-10-21 1978-11-28 Colgate-Palmolive Company Waxing sponge
DE2632545C2 (de) 1976-07-20 1984-04-26 Collo Gmbh, 5303 Bornheim Reinigungskörper für die Körperpflege, für Haushaltszwecke und dgl.
US4138228A (en) 1977-02-02 1979-02-06 Ralf Hoehn Abrasive of a microporous polymer matrix with inorganic particles thereon
US4470859A (en) 1981-06-26 1984-09-11 Diamond Shamrock Chemicals Company Coated porous substrate formation by solution coating
US4581287A (en) 1984-06-18 1986-04-08 Creative Products Resource Associates, Ltd. Composite reticulated foam-textile cleaning pad
AU604899B2 (en) 1987-05-27 1991-01-03 Minnesota Mining And Manufacturing Company Abrasive grits formed of ceramic, impregnation method of making the same and products made therewith
US5104421B1 (en) 1990-03-23 1993-11-16 Fujimi Abrasives Co.,Ltd. Polishing method of goods and abrasive pad therefor
US5222092A (en) 1990-07-11 1993-06-22 University Of Florida Laser dye impregnated silica sol-gel monoliths
US5197999A (en) 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
US6099394A (en) 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5216843A (en) * 1992-09-24 1993-06-08 Intel Corporation Polishing pad conditioning apparatus for wafer planarization process
US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5893935A (en) 1997-01-09 1999-04-13 Minnesota Mining And Manufacturing Company Method for making abrasive grain using impregnation, and abrasive articles
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5944583A (en) 1997-03-17 1999-08-31 International Business Machines Corporation Composite polish pad for CMP
US6165560A (en) 1997-05-30 2000-12-26 Micell Technologies Surface treatment
US5899745A (en) 1997-07-03 1999-05-04 Motorola, Inc. Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor
JP3618541B2 (ja) 1998-03-23 2005-02-09 信越半導体株式会社 研磨布、研磨布処理方法及び研磨方法
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6908374B2 (en) 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
US6103628A (en) * 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US6521284B1 (en) 1999-11-03 2003-02-18 Scimed Life Systems, Inc. Process for impregnating a porous material with a cross-linkable composition
KR100789663B1 (ko) 2000-03-15 2007-12-31 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 연마층에 투명 윈도우 부분을 갖는 연마 패드
US6477926B1 (en) * 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
WO2002030617A1 (en) * 2000-10-06 2002-04-18 Cabot Microelectronics Corporation Polishing pad comprising a filled translucent region
US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US6561889B1 (en) * 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
WO2002070200A1 (en) * 2001-03-01 2002-09-12 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
US20020192268A1 (en) 2001-06-19 2002-12-19 Alwattari Ali Abdelaziz Substrates utilizing shear responsive micropockets for storage and delivery of substances
US6530829B1 (en) 2001-08-30 2003-03-11 Micron Technology, Inc. CMP pad having isolated pockets of continuous porosity and a method for using such pad
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US7195544B2 (en) * 2004-03-23 2007-03-27 Cabot Microelectronics Corporation CMP porous pad with component-filled pores
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH074769B2 (ja) * 1991-10-11 1995-01-25 ロデール・ニッタ株式会社 研磨用クロス
JPH10277923A (ja) * 1997-02-03 1998-10-20 Tokyo Electron Ltd 研磨装置及び研磨方法
JPH1133903A (ja) * 1997-07-15 1999-02-09 Internatl Business Mach Corp <Ibm> マイクロカプセル化された研磨剤を配給する方法及び装置
JPH11285961A (ja) * 1998-04-03 1999-10-19 Nikon Corp 研磨パッド及び研磨方法
JP2002283221A (ja) * 2001-03-21 2002-10-03 Rodel Nitta Co 研磨布
JP2004025415A (ja) * 2002-06-28 2004-01-29 Noritake Co Ltd 研磨体およびその製造方法
JP2004281685A (ja) * 2003-03-14 2004-10-07 Mitsubishi Electric Corp 半導体基板の研磨用パッドおよび半導体基板の研磨方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010058220A (ja) * 2008-09-03 2010-03-18 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法
WO2010123744A3 (en) * 2009-04-23 2011-01-20 Cabot Microelectronics Corporation Cmp porous pad with particles in a polymeric matrix
US9951054B2 (en) 2009-04-23 2018-04-24 Cabot Microelectronics Corporation CMP porous pad with particles in a polymeric matrix
JP2012245582A (ja) * 2011-05-27 2012-12-13 Nippon Electric Glass Co Ltd 酸化セリウム系研磨材の製造方法

Also Published As

Publication number Publication date
KR101178335B1 (ko) 2012-08-29
EP1751243A1 (en) 2007-02-14
IL176955A0 (en) 2006-12-10
CN1934208A (zh) 2007-03-21
MY139413A (en) 2009-09-30
US7195544B2 (en) 2007-03-27
EP1751243B1 (en) 2014-04-16
IL176955A (en) 2012-10-31
KR20060127221A (ko) 2006-12-11
CN1934208B (zh) 2011-08-10
WO2005100497A1 (en) 2005-10-27
TW200609315A (en) 2006-03-16
IL215969A0 (en) 2011-12-29
KR20120087991A (ko) 2012-08-07
US20050215177A1 (en) 2005-09-29
MY146815A (en) 2012-09-28
US7699684B2 (en) 2010-04-20
US20070180778A1 (en) 2007-08-09
TWI280266B (en) 2007-05-01

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