TWI280266B - CMP porous pad with component-filled pores - Google Patents

CMP porous pad with component-filled pores Download PDF

Info

Publication number
TWI280266B
TWI280266B TW094105984A TW94105984A TWI280266B TW I280266 B TWI280266 B TW I280266B TW 094105984 A TW094105984 A TW 094105984A TW 94105984 A TW94105984 A TW 94105984A TW I280266 B TWI280266 B TW I280266B
Authority
TW
Taiwan
Prior art keywords
polishing pad
polishing
component
group
polymeric material
Prior art date
Application number
TW094105984A
Other languages
English (en)
Chinese (zh)
Other versions
TW200609315A (en
Inventor
Abaneshwar Prasad
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200609315A publication Critical patent/TW200609315A/zh
Application granted granted Critical
Publication of TWI280266B publication Critical patent/TWI280266B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW094105984A 2004-03-23 2005-03-01 CMP porous pad with component-filled pores TWI280266B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/807,064 US7195544B2 (en) 2004-03-23 2004-03-23 CMP porous pad with component-filled pores

Publications (2)

Publication Number Publication Date
TW200609315A TW200609315A (en) 2006-03-16
TWI280266B true TWI280266B (en) 2007-05-01

Family

ID=34962652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105984A TWI280266B (en) 2004-03-23 2005-03-01 CMP porous pad with component-filled pores

Country Status (9)

Country Link
US (2) US7195544B2 (enExample)
EP (1) EP1751243B1 (enExample)
JP (1) JP2007531276A (enExample)
KR (2) KR101178335B1 (enExample)
CN (1) CN1934208B (enExample)
IL (2) IL176955A (enExample)
MY (2) MY146815A (enExample)
TW (1) TWI280266B (enExample)
WO (1) WO2005100497A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8343586B2 (en) 2008-11-12 2013-01-01 Bestac Advanced Material Co., Ltd. Conductive polishing pad and method for making the same
US9555518B2 (en) 2010-10-15 2017-01-31 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US10946495B2 (en) 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad

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US7195544B2 (en) * 2004-03-23 2007-03-27 Cabot Microelectronics Corporation CMP porous pad with component-filled pores
US20070010175A1 (en) * 2005-07-07 2007-01-11 San Fang Chemical Industry Co., Ltd. Polishing pad and method of producing same
RU2008106248A (ru) * 2005-07-19 2009-08-27 Дау Глобал Текнолоджиз Инк. (Us) Содержащий микрополости упругий, термопластичный пеноматериал, композиционный материал из пеноматериала и частиц, способы получения и изделия, изготовленные из него
TWI378844B (en) * 2005-08-18 2012-12-11 Rohm & Haas Elect Mat Polishing pad and method of manufacture
TW200709892A (en) * 2005-08-18 2007-03-16 Rohm & Haas Elect Mat Transparent polishing pad
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
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JP5514806B2 (ja) * 2008-04-29 2014-06-04 セミクエスト・インコーポレーテッド 研磨パッド組成物およびその製造方法ならびに使用
TWI409137B (zh) * 2008-06-19 2013-09-21 Bestac Advanced Material Co Ltd 研磨墊及其微型結構形成方法
TWM352127U (en) * 2008-08-29 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
JP5377909B2 (ja) * 2008-09-03 2013-12-25 東洋ゴム工業株式会社 研磨パッド及びその製造方法
TWM352126U (en) * 2008-10-23 2009-03-01 Bestac Advanced Material Co Ltd Polishing pad
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US9951054B2 (en) * 2009-04-23 2018-04-24 Cabot Microelectronics Corporation CMP porous pad with particles in a polymeric matrix
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US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
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US9238294B2 (en) * 2014-06-18 2016-01-19 Nexplanar Corporation Polishing pad having porogens with liquid filler
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN113579992A (zh) 2014-10-17 2021-11-02 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
JP2016087770A (ja) * 2014-11-11 2016-05-23 株式会社東芝 研磨布および研磨方法
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
KR20240015161A (ko) 2016-01-19 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 다공성 화학적 기계적 연마 패드들
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN107866753B (zh) * 2017-12-08 2024-07-26 清华大学 具有随机多孔结构金属结合剂砂轮、装置及制备工艺
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
TWI885783B (zh) 2019-02-20 2025-06-01 美商應用材料股份有限公司 化學機械拋光裝置及化學機械拋光方法
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
TW202522580A (zh) 2019-08-13 2025-06-01 美商應用材料股份有限公司 化學機械研磨系統
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113977453B (zh) * 2021-11-08 2023-01-13 万华化学集团电子材料有限公司 提高抛光平坦度的化学机械抛光垫及其应用
TWI841907B (zh) * 2022-01-17 2024-05-11 貝達先進材料股份有限公司 研磨墊、製造研磨墊之方法及研磨裝置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8343586B2 (en) 2008-11-12 2013-01-01 Bestac Advanced Material Co., Ltd. Conductive polishing pad and method for making the same
US9555518B2 (en) 2010-10-15 2017-01-31 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US10946495B2 (en) 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad

Also Published As

Publication number Publication date
KR101178335B1 (ko) 2012-08-29
EP1751243A1 (en) 2007-02-14
IL176955A0 (en) 2006-12-10
CN1934208A (zh) 2007-03-21
MY139413A (en) 2009-09-30
US7195544B2 (en) 2007-03-27
EP1751243B1 (en) 2014-04-16
IL176955A (en) 2012-10-31
KR20060127221A (ko) 2006-12-11
CN1934208B (zh) 2011-08-10
WO2005100497A1 (en) 2005-10-27
TW200609315A (en) 2006-03-16
IL215969A0 (en) 2011-12-29
KR20120087991A (ko) 2012-08-07
US20050215177A1 (en) 2005-09-29
MY146815A (en) 2012-09-28
US7699684B2 (en) 2010-04-20
US20070180778A1 (en) 2007-08-09
JP2007531276A (ja) 2007-11-01

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