JP2007529903A - Ｌｐｐのｅｕｖ光源 - Google Patents

Ｌｐｐのｅｕｖ光源 Download PDF

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Publication number
JP2007529903A
JP2007529903A JP2007503940A JP2007503940A JP2007529903A JP 2007529903 A JP2007529903 A JP 2007529903A JP 2007503940 A JP2007503940 A JP 2007503940A JP 2007503940 A JP2007503940 A JP 2007503940A JP 2007529903 A JP2007529903 A JP 2007529903A
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JP
Japan
Prior art keywords
laser
pulse
plasma
brillouin scattering
output
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Pending
Application number
JP2007503940A
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English (en)
Japanese (ja)
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JP2007529903A5 (enExample
Inventor
ウィリアム エヌ パートロ
ダニエル ジェイ ダブリュー ブラウン
イゴー ヴィー フォーメンコフ
ノーバート アール バウアリング
カーティス エル レティッグ
ジョゼフ ジェイ マクファーレイン
アレクサンダー アイ アーショフ
ビョルン エイ エム ハンソン
Original Assignee
サイマー インコーポレイテッド
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Priority claimed from US10/803,526 external-priority patent/US7087914B2/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Publication of JP2007529903A publication Critical patent/JP2007529903A/ja
Publication of JP2007529903A5 publication Critical patent/JP2007529903A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H01S3/1653—YLiF4(YLF, LYF)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2255—XeF, i.e. xenon fluoride is comprised for lasing around 351 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • X-Ray Techniques (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007503940A 2004-03-17 2005-03-03 Ｌｐｐのｅｕｖ光源 Pending JP2007529903A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source
US10/979,919 US7317196B2 (en) 2004-03-17 2004-11-01 LPP EUV light source
PCT/US2005/007063 WO2005089131A2 (en) 2004-03-17 2005-03-03 Lpp euv light source

Publications (2)

Publication Number Publication Date
JP2007529903A true JP2007529903A (ja) 2007-10-25
JP2007529903A5 JP2007529903A5 (enExample) 2008-04-17

Family

ID=34994164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007503940A Pending JP2007529903A (ja) 2004-03-17 2005-03-03 Ｌｐｐのｅｕｖ光源

Country Status (4)

Country Link
EP (1) EP1730764A4 (enExample)
JP (1) JP2007529903A (enExample)
KR (1) KR20060125905A (enExample)
WO (1) WO2005089131A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005310453A (ja) * 2004-04-19 2005-11-04 Canon Inc 光源装置、当該光源装置を有する露光装置
JPWO2006049274A1 (ja) * 2004-11-08 2008-05-29 株式会社ニコン 露光装置および露光方法
JP2009542021A (ja) * 2006-07-03 2009-11-26 カール・ツァイス・エスエムティー・アーゲー リソグラフィ投影対物器械を修正／修理する方法
JP2010021518A (ja) * 2008-06-12 2010-01-28 Komatsu Ltd スラブ型レーザ装置
JP2010514214A (ja) * 2006-12-22 2010-04-30 サイマー インコーポレイテッド レーザ生成プラズマｅｕｖ光源
JP2010103104A (ja) * 2008-09-26 2010-05-06 Komatsu Ltd 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置で使用される可飽和吸収体の制御方法
JP2010171375A (ja) * 2008-10-16 2010-08-05 Gigaphoton Inc レーザ装置および極端紫外光光源装置
JP2010186735A (ja) * 2008-09-19 2010-08-26 Komatsu Ltd 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置用レーザ光源の調整方法
JP2012089883A (ja) * 2006-08-29 2012-05-10 Komatsu Ltd 極端紫外光源装置用ドライバーレーザ
JP2013093308A (ja) * 2011-10-05 2013-05-16 Gigaphoton Inc 極端紫外光生成装置および極端紫外光生成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060146906A1 (en) * 2004-02-18 2006-07-06 Cymer, Inc. LLP EUV drive laser
JP5156192B2 (ja) * 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
JP5086677B2 (ja) * 2006-08-29 2012-11-28 ギガフォトン株式会社 極端紫外光源装置用ドライバーレーザ
JP5179793B2 (ja) * 2007-07-18 2013-04-10 ギガフォトン株式会社 極端紫外光源用ドライバレーザ
JP5608173B2 (ja) * 2008-12-16 2014-10-15 コーニンクレッカ フィリップス エヌ ヴェ 向上された効率によってｅｕｖ放射又は軟ｘ線を生成する方法及び装置
WO2010093903A2 (en) * 2009-02-13 2010-08-19 Kla-Tencor Corporation Optical pumping to sustain hot plasma
US12374853B2 (en) 2019-05-22 2025-07-29 Cymer, Llc Control system for a plurality of deep ultraviolet optical oscillators
JP2022533932A (ja) * 2019-05-22 2022-07-27 サイマー リミテッド ライアビリティ カンパニー 複数のレーザビームを発生させるための装置及び方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000107875A (ja) * 1998-10-02 2000-04-18 Mitsubishi Electric Corp レーザ照射装置
WO2003087867A2 (en) * 2002-04-10 2003-10-23 Cymer, Inc. Extreme ultraviolet light source

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE331424T1 (de) * 2002-05-13 2006-07-15 Jettec Ab Verfahren zur strahlungserzeugung
DE10305701B4 (de) * 2003-02-07 2005-10-06 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung mit hohen Repetitionsraten

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000107875A (ja) * 1998-10-02 2000-04-18 Mitsubishi Electric Corp レーザ照射装置
WO2003087867A2 (en) * 2002-04-10 2003-10-23 Cymer, Inc. Extreme ultraviolet light source

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005310453A (ja) * 2004-04-19 2005-11-04 Canon Inc 光源装置、当該光源装置を有する露光装置
JPWO2006049274A1 (ja) * 2004-11-08 2008-05-29 株式会社ニコン 露光装置および露光方法
JP2009542021A (ja) * 2006-07-03 2009-11-26 カール・ツァイス・エスエムティー・アーゲー リソグラフィ投影対物器械を修正／修理する方法
JP2012089883A (ja) * 2006-08-29 2012-05-10 Komatsu Ltd 極端紫外光源装置用ドライバーレーザ
JP2010514214A (ja) * 2006-12-22 2010-04-30 サイマー インコーポレイテッド レーザ生成プラズマｅｕｖ光源
JP2010021518A (ja) * 2008-06-12 2010-01-28 Komatsu Ltd スラブ型レーザ装置
JP2010186735A (ja) * 2008-09-19 2010-08-26 Komatsu Ltd 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置用レーザ光源の調整方法
JP2010103104A (ja) * 2008-09-26 2010-05-06 Komatsu Ltd 極端紫外光源装置、極端紫外光源装置用レーザ光源装置及び極端紫外光源装置で使用される可飽和吸収体の制御方法
JP2010171375A (ja) * 2008-10-16 2010-08-05 Gigaphoton Inc レーザ装置および極端紫外光光源装置
US8804778B2 (en) 2008-10-16 2014-08-12 Gigaphoton Inc. Laser apparatus and extreme ultraviolet light source apparatus
JP2013093308A (ja) * 2011-10-05 2013-05-16 Gigaphoton Inc 極端紫外光生成装置および極端紫外光生成方法

Also Published As

Publication number Publication date
EP1730764A4 (en) 2010-08-18
WO2005089131A3 (en) 2006-06-08
EP1730764A2 (en) 2006-12-13
WO2005089131A2 (en) 2005-09-29
KR20060125905A (ko) 2006-12-06

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