WO2005089131A3 - Lpp euv light source - Google Patents

Lpp euv light source Download PDF

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Publication number
WO2005089131A3
WO2005089131A3 PCT/US2005/007063 US2005007063W WO2005089131A3 WO 2005089131 A3 WO2005089131 A3 WO 2005089131A3 US 2005007063 W US2005007063 W US 2005007063W WO 2005089131 A3 WO2005089131 A3 WO 2005089131A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
euv light
irradiation pulse
light source
lpp euv
Prior art date
Application number
PCT/US2005/007063
Other languages
French (fr)
Other versions
WO2005089131A2 (en
Inventor
William N Partlo
Daniel J W Brown
Igor V Fomenkov
Norbert R Bowering
Curtis L Rettig
Joseph J Macfarlane
Alexander I Ershov
Bjorn A M Hansson
Original Assignee
Cymer Inc
William N Partlo
Daniel J W Brown
Igor V Fomenkov
Norbert R Bowering
Curtis L Rettig
Joseph J Macfarlane
Alexander I Ershov
Bjorn A M Hansson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/803,526 external-priority patent/US7087914B2/en
Application filed by Cymer Inc, William N Partlo, Daniel J W Brown, Igor V Fomenkov, Norbert R Bowering, Curtis L Rettig, Joseph J Macfarlane, Alexander I Ershov, Bjorn A M Hansson filed Critical Cymer Inc
Priority to JP2007503940A priority Critical patent/JP2007529903A/en
Priority to EP05724577A priority patent/EP1730764A4/en
Publication of WO2005089131A2 publication Critical patent/WO2005089131A2/en
Publication of WO2005089131A3 publication Critical patent/WO2005089131A3/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1645—Solid materials characterised by a crystal matrix halide
    • H01S3/1653—YLiF4(YLF, LYF)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2255—XeF, i.e. xenon fluoride is comprised for lasing around 351 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383—Parallel arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Lasers (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An LPP EUV light source (20) comprises a laser initial target irradiation pulse generating mechanism (60) for irradiating a plasma initiation target (94) with an initial target irradiation pulse (55) to form an EUV generating plasma (30) having an emission region emitting in-band EUV light (40); a laser plasma irradiation pulse generating mechanism (72) for irradiating the plasma (30) with a plasma irradiation pulse (76) after the initial target irradiation pulse (55) to compress emission material in the plasma (30).
PCT/US2005/007063 2004-03-17 2005-03-03 Lpp euv light source WO2005089131A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007503940A JP2007529903A (en) 2004-03-17 2005-03-03 LPP EUV light source
EP05724577A EP1730764A4 (en) 2004-03-17 2005-03-03 Lpp euv light source

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source
US10/803,526 2004-03-17
US10/979,919 US7317196B2 (en) 2004-03-17 2004-11-01 LPP EUV light source
US10/979,919 2004-11-01

Publications (2)

Publication Number Publication Date
WO2005089131A2 WO2005089131A2 (en) 2005-09-29
WO2005089131A3 true WO2005089131A3 (en) 2006-06-08

Family

ID=34994164

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/007063 WO2005089131A2 (en) 2004-03-17 2005-03-03 Lpp euv light source

Country Status (4)

Country Link
EP (1) EP1730764A4 (en)
JP (1) JP2007529903A (en)
KR (1) KR20060125905A (en)
WO (1) WO2005089131A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928416B2 (en) * 2006-12-22 2011-04-19 Cymer, Inc. Laser produced plasma EUV light source
US20060146906A1 (en) * 2004-02-18 2006-07-06 Cymer, Inc. LLP EUV drive laser
JP4574211B2 (en) * 2004-04-19 2010-11-04 キヤノン株式会社 Light source device and exposure apparatus having the light source device
US7329884B2 (en) * 2004-11-08 2008-02-12 Nikon Corporation Exposure apparatus and exposure method
JP5156192B2 (en) * 2006-01-24 2013-03-06 ギガフォトン株式会社 Extreme ultraviolet light source device
JP5156740B2 (en) * 2006-07-03 2013-03-06 カール・ツァイス・エスエムティー・ゲーエムベーハー Method for correcting / repairing a lithographic projection objective
JP5551722B2 (en) * 2006-08-29 2014-07-16 ギガフォトン株式会社 Driver laser for extreme ultraviolet light source device
JP5086677B2 (en) * 2006-08-29 2012-11-28 ギガフォトン株式会社 Driver laser for extreme ultraviolet light source device
JP5179793B2 (en) * 2007-07-18 2013-04-10 ギガフォトン株式会社 Driver laser for extreme ultraviolet light source
JP5758569B2 (en) * 2008-06-12 2015-08-05 ギガフォトン株式会社 Slab type laser equipment
JP5833806B2 (en) * 2008-09-19 2015-12-16 ギガフォトン株式会社 Extreme ultraviolet light source device, laser light source device for extreme ultraviolet light source device, and adjustment method of laser light source for extreme ultraviolet light source device
JP5587578B2 (en) * 2008-09-26 2014-09-10 ギガフォトン株式会社 Extreme ultraviolet light source device and pulse laser device
JP5536401B2 (en) * 2008-10-16 2014-07-02 ギガフォトン株式会社 Laser device and extreme ultraviolet light source device
EP2380411B1 (en) * 2008-12-16 2015-04-15 Philips Deutschland GmbH Method and device for generating euv radiation or soft x-rays with enhanced efficiency
JP5619779B2 (en) * 2009-02-13 2014-11-05 ケーエルエー−テンカー コーポレイション Optical pumping to sustain high temperature plasma
JP6021454B2 (en) * 2011-10-05 2016-11-09 ギガフォトン株式会社 Extreme ultraviolet light generation apparatus and extreme ultraviolet light generation method
US20220255288A1 (en) * 2019-05-22 2022-08-11 Cymer, Llc Apparatus for and method of generating multiple laser beams
KR102560079B1 (en) * 2019-05-22 2023-07-25 사이머 엘엘씨 Control system for multiple deep ultraviolet optical oscillators

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946669B2 (en) * 2003-02-07 2005-09-20 Xtreme Technologies Gmbh Arrangement for the generation of EUV radiation with high repetition rates

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3715800B2 (en) * 1998-10-02 2005-11-16 三菱電機株式会社 Laser irradiation device
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
EP1365635B1 (en) * 2002-05-13 2006-06-21 Jettec AB Method for producing radiation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946669B2 (en) * 2003-02-07 2005-09-20 Xtreme Technologies Gmbh Arrangement for the generation of EUV radiation with high repetition rates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1730764A4 *

Also Published As

Publication number Publication date
WO2005089131A2 (en) 2005-09-29
KR20060125905A (en) 2006-12-06
EP1730764A2 (en) 2006-12-13
JP2007529903A (en) 2007-10-25
EP1730764A4 (en) 2010-08-18

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