JP2007529597A - 性能が向上した白色有機発光デバイス - Google Patents
性能が向上した白色有機発光デバイス Download PDFInfo
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- JP2007529597A JP2007529597A JP2007503929A JP2007503929A JP2007529597A JP 2007529597 A JP2007529597 A JP 2007529597A JP 2007503929 A JP2007503929 A JP 2007503929A JP 2007503929 A JP2007503929 A JP 2007503929A JP 2007529597 A JP2007529597 A JP 2007529597A
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- 238000003756 stirring Methods 0.000 description 1
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- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-O triphenylphosphanium Chemical compound C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-O 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
a)アノードと;
b)このアノードの上に配置された正孔輸送層と;
c)この正孔輸送層の上に直接配置された、青色発光化合物をドープされた青色発光層と;
d)この青色発光層の上に配置された電子輸送層と;
e)この電子輸送層の上に配置されたカソードとを備えていて;
f)正孔輸送層と電子輸送層の一方または両方が、一般式(I)の化合物:
R1、R2、R3、R4、R5、R6は各環の置換基を表わし、各置換基は、独立に、炭素原子が1〜24個のアルキル基または置換されたアルキル基;炭素原子が6〜20個のアリール基または置換されたアリール基;縮合芳香族環を完成させるのに必要な4〜24個の炭素原子;5〜24個の炭素原子からなる複素環基または置換された複素環基で、単結合を通じて結合すること、または縮合した複素芳香族環系を完成させることができるもの;炭素原子が1〜24個のアルコキシ基、アリールオキシ基、アルコキシアミノ基、アルキルアミノ基、アリールアミノ基;フッ素置換基、塩素置換基、臭素置換基、シアノ置換基の中から選択され;
a、b、c、dは、独立に、0〜5の中から選択され;
eとfは、独立に、0〜4の中から選択され;
R1〜R4のうちの少なくとも1つは縮合環基ではなく、R1〜R6のうちの少なくとも1つは置換基であり;
さらに、R1とR4の両方が複素環であることはなく、R2とR3の両方が複素環であることもない)またはその誘導体を選択的にドープされていて、その化合物がスペクトルの黄色領域の光を出し、青色発光層と接触している層の全体または一部に対応することを特徴とするデバイスによって実現される。
R1、R2、R3、R4、R5、R6は各環の置換基を表わし、各置換基は、独立に、炭素原子が1〜24個のアルキル基または置換されたアルキル基;炭素原子が6〜20個のアリール基または置換されたアリール基;縮合芳香族環を完成させるのに必要な4〜24個の炭素原子;5〜24個の炭素原子からなる複素環基または置換された複素環基で、単結合を通じて結合すること、または縮合した複素芳香族環系を完成させることができるもの;炭素原子が1〜24個のアルコキシ基、アリールオキシ基、アルコキシアミノ基、アルキルアミノ基、アリールアミノ基;フッ素置換基、塩素置換基、臭素置換基、シアノ置換基の中から選択され;
a、b、c、dは、独立に、0〜5の中から選択され;
eとfは、独立に、0〜4の中から選択され;
R1〜R4のうちの少なくとも1つは縮合環基ではなく、R1〜R6のうちの少なくとも1つは置換基であり;
さらに、R1とR4の両方が複素環であることはなく、R2とR3の両方が複素環であることもない)。
a)R5とR6の少なくとも一方が芳香族基または複素環基の中から選択されていて;
b)R1、R2、R3、R4のうちの少なくとも1つが、a)の芳香族基または複素環基と同じ少なくとも1つの置換基を含んでいる実施態様である。
a)2位と8位に同じ芳香族基または複素環基が存在しており;
b)5位と11位のフェニル環が、a)の芳香族基または複素環基と同じパラ置換基を含み;
c)6位と12位のフェニル環が、置換されている、または置換されていない)。
a)R5とR6のうちの少なくとも一方が、オキシ基、アザ基、チオ基の中から選択され;
b)R1、R2、R3、R4のうちの少なくとも1つが、a)のオキシ基、アザ基、チオ基と同じ1個の置換基を含んでいる場合に得られる。
a)R5とR6が、2位と8位に同じオキシ基、アザ基、チオ基を含み;
b)5位と11位のフェニル環が、a)のオキシ基、アザ基、チオ基と同じパラ置換基を含み;
c)6位と12位のフェニル環が、置換されている、または置換されておらず;
1個の置換基がc)の両方のフェニル環に存在しているときには、その置換基はパラ位置にあるメトキシ基ではない場合である。
a)R5とR6のそれぞれが、少なくとも1個の同じアルキル基または非芳香族炭素環基を含み;
b)R1とR3のそれぞれが、a)のアルキル基または非芳香族炭素環基と同じ少なくとも1個の置換基を含んでいる場合である。
a)R5とR6のそれぞれが、2位と8位に少なくとも1個の同じ分岐アルキル基または非芳香族炭素環基を含み;
b)5位と11位のフェニル環が、a)の分岐アルキル基または非芳香族炭素環基と同じパラ置換基を含み;
c)6位と12位のフェニル環が、置換されている、または置換されていない場合である。
a)アノードと;
b)このアノードの上に配置された正孔輸送層と;
c)この正孔輸送層の上に配置された青色発光層と;
d)この青色発光層の上に配置された電子輸送層と;
e)この電子輸送層の上に配置されたカソードとを備え;
f)上記正孔輸送層が、上記青色発光層の全体または一部と接触している層を備えていて、一般式(III)の発光ナフタセン化合物:
i)上記ナフタセンは、少なくとも1個のフッ素基またはフッ素含有基を含み;
ii)正確に2個のフッ素含有基が存在している場合には、その基がそれぞれ5位と12位に位置せず、それぞれ6位と11位にも位置していないことを特徴とするデバイスである。
a)上記ナフタセン誘導体の昇華温度が、フッ素基またはフッ素含有基を含まない誘導体よりも少なくとも5℃低い;あるいは
b)上記ナフタセン誘導体が昇華し、フッ素基またはフッ素含有基を含まない誘導体が融解する実施態様である。
a)上記ナフタセンが、5位と6位と11位と12位、または1位〜4位、または7位〜10位に位置するフェニル基上に少なくとも1個のフッ素基またはフッ素含有基を含み;
b)正確に2個のフッ素基が存在している場合には、その基は、それぞれ5位と12位のフェニル基上に位置せず、それぞれ6位と11位のフェニル基上にも位置していない実施態様である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式(C):
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン基またはアントラセン基)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン
1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン
4,4'-ビス (ジフェニルアミノ)クアドリフェニル
ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン
N,N,N-トリ(p-トリル)アミン
4-(ジ-p-トリルアミノ)-4'-[4(ジ-p-トリルアミノ)-スチリル]スチルベン
N,N,N',N'-テトラ-p-トリル-4,4'-ジアミノビフェニル
N,N,N',N'-テトラフェニル-4,4'-ジアミノビフェニル
N,N,N',N'-テトラ-1-ナフチル-4,4'-ジアミノビフェニル
N,N,N',N'-テトラ-2-ナフチル-4,4'-ジアミノビフェニル
N-フェニルカルバゾール
4,4'-ビス[N-(1-ナフチル)-N-フェニルアミノ]ビフェニル(NPB)
4,4'-ビス[N-(1-ナフチル)-N-(2-ナフチル)アミノ]ビフェニル(TNB)
4,4"-ビス[N-(1-ナフチル)-N-フェニルアミノ]-p-テルフェニル
4,4'-ビス[N-(2-ナフチル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(3-アセナフテニル)-N-フェニルアミノ]ビフェニル
1,5-ビス[N-(1-ナフチル)-N-フェニルアミノ]ナフタレン
4,4'-ビス[N-(9-アントリル)-N-フェニルアミノ]ビフェニル
4,4"-ビス[N-(1-アントリル)-N-フェニルアミノ]-p-テルフェニル
4,4'-ビス[N-(2-フェナントリル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(8-フルオランテニル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(2-ピレニル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(2-ナフタセニル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(2-ペリレニル)-N-フェニルアミノ]ビフェニル
4,4'-ビス[N-(1-コロネニル)-N-フェニルアミノ]ビフェニル
2,6-ビス(ジ-p-トリルアミノ)ナフタレン
2,6-ビス[ジ-(1-ナフチル)アミノ]ナフタレン
2,6-ビス[N-(1-ナフチル)-N-(2-ナフチル)アミノ]ナフタレン
N,N,N',N'-テトラ(2-ナフチル)-4,4"-ジアミノ-p-テルフェニル
4,4'-ビス{N-フェニル-N-[4-(1-ナフチル)-フェニル]アミノ}ビフェニル
4,4'-ビス[N-フェニル-N-(2-ピレニル)アミノ]ビフェニル
2,6-ビス[N,N-ジ(2-ナフチル)アミン]フルオレン
1,5-ビス[N-(1-ナフチル)-N-フェニルアミノ]ナフタレン
4,4',4"-トリス[(3-メチルフェニル)フェニルアミノ]トリフェニルアミン(MTDATA)
4,4'-ビス[N-(3-メチルフェニル)-N-フェニルアミノ]ビフェニル(TPD)。
CO-1:アルミニウムトリスオキシン[別名、トリス(8-キノリノラト)アルミニウム(III)](AlQ3)
CO-2:マグネシウムビスオキシン[別名、ビス(8-キノリノラト)マグネシウム(II)]
CO-3:ビス[ベンゾ{f}-8-キノリノラト]亜鉛(II)
CO-4:ビス(2-メチル-8-キノリノラト)アルミニウム(III)-μ-オキソ-ビス(2-メチル-8-キノリノラト)アルミニウム(III)
CO-5:インジウムトリスオキシン[別名、トリス(8-キノリノラト)インジウム]
CO-6:アルミニウムトリス(5-メチルオキシン)[別名、トリス(5-メチル-8-キノリノラト)アルミニウム(III)]
CO-7:リチウムオキシン[別名、(8-キノリノラト)リチウム(I)]
CO-8:ガリウムオキシン[別名、トリス(8-キノリノラト)ガリウム(III)]
CO-9:ジルコニウムオキシン[別名、テトラ(8-キノリノラト)ジルコニウム(IV)]
CO-10:ビス(2-メチル-8-キノリナト)-4-フェニルフェノラトアルミニウム(III)
グループ1:水素、または炭素原子が1〜24個のアルキル基とアルコキシ基;
グループ2:炭素原子が6〜20個の環式基
グループ3:一般に6〜30個の炭素原子を有するナフチル基、アントラセニル基、ピレニル基、ペリレニル基などの炭素環式縮合環基を完成させるのに必要な原子;
グループ4:一般に5〜24個の炭素原子を有するフリル基、チエニル基、ピリジル基、キノリニル基などの複素環縮合環基を完成させるのに必要な原子;
グループ5:一般に1〜24個の炭素原子を有するアルコキシアミノ基、アルキルアミノ基、アリールアミノ基;
グループ6:フッ素基、塩素基、臭素基、シアノ基。
nは3〜8の整数であり;
Zは、-O、-NR、-Sのいずれかであり(ただしRはHまたは置換基である);
R'は場合によっては存在する1個以上の置換基を表わし、Rと各R'は、水素、または炭素原子が一般に1〜24個のアルキル基(例えばプロピル基、t-ブチル基、ヘプチル基など);炭素環基または複素環基(例えばフェニル基、ナフチル基、フリル基、チエニル基、ピリジル基、キノリニル基)、炭素原子が一般に5〜20個の縮合芳香族環基を完成させるのに必要な原子;ハロ(例えばクロロ、フルオロ)であり;
Lは、アルキル基またはアリール基を含む結合単位であり、複数のベンズアゾールを互いに共役的または非共役的に結合させる。
AとA'は、独立に、少なくとも1個の窒素を含む6員の芳香族環系に対応するアジン環系を表わし;
XaとXbはそれぞれ、独立に選択した置換基であり、そのうちの2つが合わさってAまたはA'との縮合環を形成していてもよく;
mとnは、独立に、0〜4であり;
Yは、Hまたは置換基であり;
ZaとZbは、独立に選択した置換基であり;
1、2、3、4、1'、2'、3'、4'は、独立に選択した炭素原子または窒素原子である。
AとA'は、独立に、少なくとも1個の窒素を含む6員の芳香族環系に対応するアジン環系を表わし;
XaとXbはそれぞれ、独立に選択した置換基であり、そのうちの2つが合わさってAまたはA'との縮合環を形成していてもよく;
mとnは、独立に、0〜4であり;
Yは、Hまたは置換基であり;
ZaとZbは、独立に選択した置換基であり;
1、2、3、4、1'、2'、3'、4'は、独立に選択した炭素原子または窒素原子である。
合成(スキーム1)
ELデバイスの製造 - 発明例
ELデバイスの製造 - 発明例
ELデバイスの製造 - 発明例
103 アノード
105 正孔注入層(HIL)
106 第1の正孔輸送層(HTL-1)
107 正孔輸送層(HTL-1)
108 第2の正孔輸送層(HTL-2)
109 発光層(LEL)
110 第1の電子輸送層(ETL-1)
111 電子輸送層(ETL-1)
112 第2の電子輸送層(ETL-2)
112b 第3の電子輸送層(ETL-3)
113 カソード
Claims (52)
- 白色光を出す有機発光ダイオード(OLED)デバイスであって、
a)アノードと;
b)このアノードの上に配置された正孔輸送層と;
c)この正孔輸送層の上に配置された青色発光層と;
d)この青色発光層の上に配置された電子輸送層と;
e)この電子輸送層の上に配置されたカソードとを備え;
f)上記正孔輸送層が、上記青色発光層の全体または一部と接触している層を備えていて、一般式(I)の発光ナフタセン化合物:
R1、R2、R3、R4、R5、R6は各環の置換基を表わし、各置換基は、独立に、炭素原子が1〜24個のアルキル基または置換されたアルキル基;炭素原子が6〜20個のアリール基または置換されたアリール基;縮合芳香族環を完成させるのに必要な4〜24個の炭素原子;5〜24個の炭素原子からなる複素環基または置換された複素環基で、単結合を通じて結合すること、または縮合した複素芳香族環系を完成させることができるもの;炭素原子が1〜24個のアルコキシ基、アリールオキシ基、アルコキシアミノ基、アルキルアミノ基、アリールアミノ基;フッ素置換基、塩素置換基、臭素置換基、シアノ置換基の中から選択され;
a、b、c、dは、独立に、0〜5の中から選択され;
eとfは、独立に、0〜4の中から選択され;
R1〜R4のうちの少なくとも1つは縮合環基ではなく、R1〜R6のうちの少なくとも1つは置換基であり;
さらに、R1とR4の両方が複素環であることはなく、R2とR3の両方が複素環であることもない)を含むことを特徴とするデバイス。 - a)R5とR6のうちの少なくとも一方が芳香族基と複素環基の中から選択され;
b)R1、R2、R3、R4のうちの少なくとも1つが、a)の芳香族基または複素環基と同じ少なくとも1個の置換基を含む、請求項1に記載のデバイス。 - a)R5とR6のうちの少なくとも一方が、オキシ基、アザ基、チオ基の中から選択され;
b)R1、R2、R3、R4のうちの少なくとも1つが、a)のオキシ基、アザ基、チオ基と同じ1個の置換基を含む、請求項1に記載のデバイス。 - a)R5とR6が、2位と8位に同じオキシ基、アザ基、チオ基を含み;
b)5位と11位のフェニル環が、a)のオキシ基、アザ基、チオ基と同じパラ置換基を含み;
c)6位と12位のフェニル環が、置換されている、または置換されておらず;
1個の置換基がc)の両方のフェニル環に存在している場合には、その置換基はパラ位置にあるメトキシ基ではない、請求項3に記載のデバイス。 - a)R5とR6のそれぞれが、少なくとも1個の同じアルキル基または非芳香族炭素環基を含み;
b)R1とR3のそれぞれが、a)のアルキル基または非芳香族炭素環基と同じ少なくとも1個の置換基を含む、請求項1に記載のデバイス。 - a)R5とR6のそれぞれが、2位と8位に少なくとも1個の同じ分岐アルキル基または非芳香族炭素環基を含み;
b)5位と11位のフェニル環が、a)の分岐アルキル基または非芳香族炭素環基と同じパラ置換基を含み;
c)6位と12位のフェニル環が、置換されている、または置換されていない、請求項3に記載のデバイス。 - 上記縮合芳香族環の選択が、フェニル基、ナフチル基、アントラセニル基、フェナントリル基、ピレニル基、ペリレニル基の中からなされる、請求項1に記載のデバイス。
- 上記複素環基または縮合複素環基系の選択が、チアゾリル基、フリル基、チエニル基、ピリジル基、キノリニル基の中からなされ、これらの基は、単結合を通じて結合すること、または縮合した複素芳香族環系を完成させることができる、請求項1に記載のデバイス。
- a)上記ナフタセン誘導体の昇華温度が、フッ素基またはフッ素含有基を含まない誘導体よりも少なくとも5℃低い;あるいは
b)上記ナフタセン誘導体が昇華し、フッ素基またはフッ素含有基を含まない誘導体が融解する、請求項10に記載のデバイス。 - a)上記ナフタセンが、5位と6位と11位と12位、または1位〜4位、または7位〜10位に位置するフェニル基上に少なくとも1個のフッ素基またはフッ素含有基を含み;
b)正確に2個のフッ素基が存在している場合には、その基は、それぞれ5位と12位のフェニル基上に位置せず、それぞれ6位と11位のフェニル基上にも位置していない、請求項3に記載のデバイス。 - 上記正孔輸送層が、ホスト材料と黄色発光ナフタセン化合物とを含み、そのナフタセン化合物の濃度が、そのホスト材料の0体積%よりも多く50体積%未満である、請求項14に記載のデバイス。
- 上記ナフタセン化合物の濃度が、上記ホスト材料の0体積%よりも多く30体積%未満である、請求項15に記載のデバイス。
- 上記ナフタセン化合物の濃度が、上記ホスト材料の0体積%よりも多く15体積%未満である、請求項15に記載のデバイス。
- 上記青色発光材料がさらにペリレン化合物またはその誘導体を含む、請求項1に記載のデバイス。
- 上記ペリレン誘導体が、2,5,8,11-テトラ-t-ブチルペリレン(TBP)である、請求項19に記載のデバイス。
- 上記青色発光材料がさらにビス(アジニル)アミンホウ素錯体を含む、請求項1に記載のデバイス。
- 上記青色発光層がホスト材料と青色発光材料を含み、その青色発光材料の濃度がそのホスト材料の0体積%よりも多く20体積%未満である、請求項1に記載のデバイス。
- 上記正孔輸送層の厚さが10nm〜300nmである、請求項1に記載のデバイス。
- 上記正孔輸送層が2つ以上のサブ層を含んでおり、上記青色発光層に最も近いサブ層に黄色発光材料がドープされている、請求項1に記載のデバイス。
- 上記青色発光層の厚さが10nm〜100nmである、請求項1に記載のデバイス。
- 正孔注入層が上記アノードと上記正孔輸送層の間に設けられている、請求項1に記載のデバイス。
- 上記正孔注入層が、CFx、CuPC、m-MTDATAのいずれかを含む、請求項28に記載のデバイス。
- 上記正孔注入層の厚さが0.1nm〜100nmである、請求項28に記載のデバイス。
- 上記電子輸送層の厚さが10nm〜150nmの範囲である、請求項1に記載のデバイス。
- 上記カソードの選択が、LiF/Al、Mg:Ag合金、Al-Li合金、Mg-Al合金からなるグループの中からなされる、請求項1に記載のデバイス。
- 上記カソードが透明である、請求項1に記載のデバイス。
- 上記電子輸送層が透明である、請求項1に記載のデバイス。
- 上記電子輸送層に、緑色発光材料、または緑色発光材料と黄色発光材料の組み合わせがドープされている、請求項1に記載のデバイス。
- 上記電子輸送層内の緑色発光材料がクマリン化合物を含む、請求項35に記載のデバイス。
- 上記クマリン化合物がC545TまたはC545TBである、請求項36に記載のデバイス。
- 上記緑色発光材料の選択が、キナクリドン基とビス(アジニル)メテンホウ素錯体基の中からなされる、請求項35に記載のデバイス。
- 上記緑色発光材料の濃度が、上記ホスト材料の0.1〜5体積%の範囲である、請求項35に記載のデバイス。
- 上記カソード層の上に配置された緩衝層をさらに含む、請求項1に記載のデバイス。
- 上記緩衝層の厚さが1nm〜1000nmの範囲である、請求項40に記載のデバイス。
- 上記基板または上記カソードの上に配置されたカラー・フィルタ・アレイをさらに含む、請求項1に記載のデバイス。
- 上記緩衝層の上に配置されたカラー・フィルタ・アレイをさらに含む、請求項40に記載のデバイス。
- 個々の画素にアドレスするための薄膜トランジスタ(TFT)を上記基板上にさらに含む、請求項1に記載のデバイス。
- 上記正孔輸送層が芳香族第三級アミンを含む、請求項1に記載のデバイス。
- 上記電子輸送層が銅フタロシアニン化合物を含む、請求項1に記載のデバイス。
- 上記正孔輸送層と上記青色発光層に他のドーパントも同時にドープされている、請求項1に記載のデバイス。
- 上記正孔輸送層の補助ドーパントがt-BuDPNであり、上記青色発光層の補助ドーパントがNPBである、請求項49に記載のデバイス。
- 三重項発光化合物を含む、請求項1に記載のデバイス。
- ポリマー発光材料を含む、請求項1に記載のデバイス。
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JP2019504471A (ja) * | 2015-12-18 | 2019-02-14 | 昆山国顕光電有限公司Kunshan Go−Visionox Opto−Electronics Co., Ltd. | 燐光有機電界発光素子 |
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JPWO2008047744A1 (ja) * | 2006-10-16 | 2010-02-25 | 東レ株式会社 | 発光素子 |
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KR100830976B1 (ko) * | 2006-11-21 | 2008-05-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 이를 구비한 유기 발광 표시 장치 |
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KR20070010004A (ko) | 2007-01-19 |
DE602005006247T2 (de) | 2009-06-25 |
US7662485B2 (en) | 2010-02-16 |
KR101232765B1 (ko) | 2013-02-13 |
EP1725631B1 (en) | 2008-04-23 |
DE602005006247D1 (de) | 2008-06-05 |
TW200604315A (en) | 2006-02-01 |
US20050208327A1 (en) | 2005-09-22 |
JP2013065868A (ja) | 2013-04-11 |
EP1725631A1 (en) | 2006-11-29 |
WO2005093008A1 (en) | 2005-10-06 |
TWI401304B (zh) | 2013-07-11 |
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