JP2007519783A5 - - Google Patents

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Publication number
JP2007519783A5
JP2007519783A5 JP2006549362A JP2006549362A JP2007519783A5 JP 2007519783 A5 JP2007519783 A5 JP 2007519783A5 JP 2006549362 A JP2006549362 A JP 2006549362A JP 2006549362 A JP2006549362 A JP 2006549362A JP 2007519783 A5 JP2007519783 A5 JP 2007519783A5
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JP
Japan
Prior art keywords
polishing system
polymer
dendrimer
polishing
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006549362A
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English (en)
Japanese (ja)
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JP5006048B2 (ja
JP2007519783A (ja
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Publication date
Priority claimed from US10/755,154 external-priority patent/US7255810B2/en
Application filed filed Critical
Publication of JP2007519783A publication Critical patent/JP2007519783A/ja
Publication of JP2007519783A5 publication Critical patent/JP2007519783A5/ja
Application granted granted Critical
Publication of JP5006048B2 publication Critical patent/JP5006048B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006549362A 2004-01-09 2005-01-05 高度に分岐したポリマーを含む研磨システム Expired - Lifetime JP5006048B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/755,154 US7255810B2 (en) 2004-01-09 2004-01-09 Polishing system comprising a highly branched polymer
US10/755,154 2004-01-09
PCT/US2005/000187 WO2005071031A1 (en) 2004-01-09 2005-01-05 Polishing system comprising a highly branched polymer

Publications (3)

Publication Number Publication Date
JP2007519783A JP2007519783A (ja) 2007-07-19
JP2007519783A5 true JP2007519783A5 (enExample) 2007-12-20
JP5006048B2 JP5006048B2 (ja) 2012-08-22

Family

ID=34739520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549362A Expired - Lifetime JP5006048B2 (ja) 2004-01-09 2005-01-05 高度に分岐したポリマーを含む研磨システム

Country Status (11)

Country Link
US (1) US7255810B2 (enExample)
EP (1) EP1702015B1 (enExample)
JP (1) JP5006048B2 (enExample)
KR (1) KR101049981B1 (enExample)
CN (1) CN1906260A (enExample)
AT (1) ATE444342T1 (enExample)
DE (1) DE602005016887D1 (enExample)
IL (1) IL176312A (enExample)
MY (1) MY142089A (enExample)
TW (1) TWI268199B (enExample)
WO (1) WO2005071031A1 (enExample)

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US7563383B2 (en) 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060090692A1 (en) * 2004-10-29 2006-05-04 Dominguez Juan E Generating nano-particles for chemical mechanical planarization
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP5240478B2 (ja) * 2008-02-18 2013-07-17 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
CN102341473B (zh) 2009-03-13 2014-06-18 圣戈本陶瓷及塑料股份有限公司 使用了纳米金刚石的化学机械平面化
JP5563269B2 (ja) * 2009-10-09 2014-07-30 四日市合成株式会社 ガラスポリッシング加工用組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
WO2012127398A1 (en) 2011-03-22 2012-09-27 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
JP5710353B2 (ja) 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP6001532B2 (ja) * 2011-05-24 2016-10-05 株式会社クラレ 化学機械研磨用エロージョン防止剤、化学機械研磨用スラリーおよび化学機械研磨方法
EP2997105A4 (en) * 2013-05-15 2017-01-25 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP2018074048A (ja) * 2016-10-31 2018-05-10 花王株式会社 シリコンウェーハ用研磨液組成物
EA202190035A1 (ru) 2018-07-04 2021-04-14 Басф Се Хелатообразователи железа, используемые в качестве активаторов в схемах щелочной флотации
KR102975525B1 (ko) * 2019-03-22 2026-06-10 주식회사 다이셀 반도체 배선 연마용 조성물
KR102745114B1 (ko) * 2021-03-18 2024-12-19 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102963632B1 (ko) * 2021-03-18 2026-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

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US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4956313A (en) * 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5137544A (en) * 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5157876A (en) * 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US5767014A (en) * 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
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US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6468589B2 (en) * 2000-02-02 2002-10-22 Jsr Corporation Composition for film formation and insulating film
KR100738774B1 (ko) * 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
EP1197587B1 (en) 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method

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