TWI268199B - Polishing system comprising a highly branched polymer - Google Patents

Polishing system comprising a highly branched polymer

Info

Publication number
TWI268199B
TWI268199B TW093141179A TW93141179A TWI268199B TW I268199 B TWI268199 B TW I268199B TW 093141179 A TW093141179 A TW 093141179A TW 93141179 A TW93141179 A TW 93141179A TW I268199 B TWI268199 B TW I268199B
Authority
TW
Taiwan
Prior art keywords
polishing system
branched polymer
highly branched
polishing
polymer
Prior art date
Application number
TW093141179A
Other languages
English (en)
Chinese (zh)
Other versions
TW200531787A (en
Inventor
Kevin J Moeggenborg
Fred F Sun
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200531787A publication Critical patent/TW200531787A/zh
Application granted granted Critical
Publication of TWI268199B publication Critical patent/TWI268199B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW093141179A 2004-01-09 2004-12-29 Polishing system comprising a highly branched polymer TWI268199B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/755,154 US7255810B2 (en) 2004-01-09 2004-01-09 Polishing system comprising a highly branched polymer

Publications (2)

Publication Number Publication Date
TW200531787A TW200531787A (en) 2005-10-01
TWI268199B true TWI268199B (en) 2006-12-11

Family

ID=34739520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141179A TWI268199B (en) 2004-01-09 2004-12-29 Polishing system comprising a highly branched polymer

Country Status (11)

Country Link
US (1) US7255810B2 (enExample)
EP (1) EP1702015B1 (enExample)
JP (1) JP5006048B2 (enExample)
KR (1) KR101049981B1 (enExample)
CN (1) CN1906260A (enExample)
AT (1) ATE444342T1 (enExample)
DE (1) DE602005016887D1 (enExample)
IL (1) IL176312A (enExample)
MY (1) MY142089A (enExample)
TW (1) TWI268199B (enExample)
WO (1) WO2005071031A1 (enExample)

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US7563383B2 (en) 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060090692A1 (en) * 2004-10-29 2006-05-04 Dominguez Juan E Generating nano-particles for chemical mechanical planarization
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP5240478B2 (ja) * 2008-02-18 2013-07-17 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
CN102341473B (zh) 2009-03-13 2014-06-18 圣戈本陶瓷及塑料股份有限公司 使用了纳米金刚石的化学机械平面化
JP5563269B2 (ja) * 2009-10-09 2014-07-30 四日市合成株式会社 ガラスポリッシング加工用組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
WO2012127398A1 (en) 2011-03-22 2012-09-27 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
JP5710353B2 (ja) 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP6001532B2 (ja) * 2011-05-24 2016-10-05 株式会社クラレ 化学機械研磨用エロージョン防止剤、化学機械研磨用スラリーおよび化学機械研磨方法
EP2997105A4 (en) * 2013-05-15 2017-01-25 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Agc株式会社 研磨剤と研磨方法、および研磨用添加液
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP2018074048A (ja) * 2016-10-31 2018-05-10 花王株式会社 シリコンウェーハ用研磨液組成物
EA202190035A1 (ru) 2018-07-04 2021-04-14 Басф Се Хелатообразователи железа, используемые в качестве активаторов в схемах щелочной флотации
KR102975525B1 (ko) * 2019-03-22 2026-06-10 주식회사 다이셀 반도체 배선 연마용 조성물
KR102745114B1 (ko) * 2021-03-18 2024-12-19 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102963632B1 (ko) * 2021-03-18 2026-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

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US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
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JP4188598B2 (ja) * 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
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US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
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US6468589B2 (en) * 2000-02-02 2002-10-22 Jsr Corporation Composition for film formation and insulating film
KR100738774B1 (ko) * 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
EP1197587B1 (en) 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
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US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method

Also Published As

Publication number Publication date
DE602005016887D1 (de) 2009-11-12
IL176312A (en) 2010-11-30
WO2005071031A1 (en) 2005-08-04
KR20060121292A (ko) 2006-11-28
CN1906260A (zh) 2007-01-31
KR101049981B1 (ko) 2011-07-19
EP1702015A1 (en) 2006-09-20
ATE444342T1 (de) 2009-10-15
US7255810B2 (en) 2007-08-14
MY142089A (en) 2010-09-15
TW200531787A (en) 2005-10-01
JP5006048B2 (ja) 2012-08-22
EP1702015B1 (en) 2009-09-30
JP2007519783A (ja) 2007-07-19
IL176312A0 (en) 2006-10-05
US20050150598A1 (en) 2005-07-14

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